木本 恒暢

最終更新日時: 2021/06/28 11:13:28

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氏名(漢字/フリガナ/アルファベット表記)
木本 恒暢/キモト ツネノブ/Kimoto, Tsunenobu
所属部署・職名(部局/所属/講座等/職名)
工学研究科/電子工学専攻電子物性工学講座/教授
学部兼担
部局 所属 講座等 職名
工学部
連絡先住所
種別 住所(日本語) 住所(英語)
職場 〒615-8510 京都府京都市西京区京都大学桂 Katsura, Nishikyo, Kyoto 615-8510 Japan
連絡先電話番号
種別 番号
職場 075-383-2300
所属学会(国内)
学会名(日本語) 学会名(英語)
応用物理学会
電子情報通信学会
電気学会
ワイドギャップ半導体学会
所属学会(海外)
学会名(英語) 国名
IEEE USA
Materials Research Society USA
取得学位
学位名(日本語) 学位名(英語) 大学(日本語) 大学(英語) 取得区分
工学修士 京都大学
博士(工学) 京都大学
出身大学院・研究科等
大学名(日本語) 大学名(英語) 研究科名(日本語) 研究科名(英語) 専攻名(日本語) 専攻名(英語) 修了区分
京都大学 大学院工学研究科修士課程電気工学第二専攻 修了
出身学校・専攻等
大学名(日本語) 大学名(英語) 学部名(日本語) 学部名(英語) 学科名(日本語) 学科名(英語) 卒業区分
京都大学 工学部電気工学第二学科 卒業
出身高等学校
高等学校名 ふりがな
桐蔭高等学校
職歴
期間 組織名(日本語) 組織名(英語) 職名(日本語) 職名(英語)
1988/04/01〜1990/03/31 住友電気工業株式会社伊丹研究所 Sumitomo Electric Industries
1990/04/01〜 京都大学工学部/工学研究科 Kyoto University
1996/09/01〜1997/08/31 スウェーデン国リンチョピン大学物理学科 Linkoping Uniersity, Sweden
使用言語
言語名(japanese) 言語名(english) コード
英語 English eng
researchmap URL
https://researchmap.jp/T_Kimoto
研究テーマ
(日本語)
半導体材料とデバイス
(英語)
Semiconductor Materials and Devices
研究概要
(日本語)
・SiCパワーデバイスの基礎研究  ・SiCの物性および欠陥物性解明  ・SiCを用いた厳環境集積回路の基礎研究  ・半導体ナノワイヤの電子状態と電気伝導  ・抵抗変化型メモリ用酸化物薄膜の形成と物性評価
(英語)
- Fundamental Study on High-Voltage SiC Power Devices - Clarification of Physical Properties and Defect Electronics in SiC - Fundamental study on SiC-Based Integrated Circuits - Electronic States and Electron Transport in Semiconductor Nanowires - Fundamental study on Oxide Films for Resistance-Switching Memories
研究分野(キーワード)
キーワード(日本語) キーワード(英語)
半導体 Semiconductor
パワーデバイス Power Device
電子輸送 Electron Transport
不揮発性メモリ Nonvolatile Memory
論文
著者 著者(日本語) 著者(英語) タイトル タイトル(日本語) タイトル(英語) 書誌情報等 書誌情報等(日本語) 書誌情報等(英語) 出版年月 査読の有無 記述言語 掲載種別 公開
Euihyeon Do, Mitsuaki Kaneko, Tsunenobu Kimoto Euihyeon Do, Mitsuaki Kaneko, Tsunenobu Kimoto Euihyeon Do, Mitsuaki Kaneko, Tsunenobu Kimoto Expansion patterns of single Shockley stacking faults from scratches on 4H-SiC Expansion patterns of single Shockley stacking faults from scratches on 4H-SiC Expansion patterns of single Shockley stacking faults from scratches on 4H-SiC Japanese Journal of Applied Physics, 60, 6, 068001-068001 Japanese Journal of Applied Physics, 60, 6, 068001-068001 Japanese Journal of Applied Physics, 60, 6, 068001-068001 2021/06/01 研究論文(学術雑誌) 公開
Qimin Jin, Masashi Nakajima, Mitsuaki Kaneko, Tsunenobu Kimoto Qimin Jin, Masashi Nakajima, Mitsuaki Kaneko, Tsunenobu Kimoto Qimin Jin, Masashi Nakajima, Mitsuaki Kaneko, Tsunenobu Kimoto Lateral spreads of ion-implanted Al and P atoms in silicon carbide Lateral spreads of ion-implanted Al and P atoms in silicon carbide Lateral spreads of ion-implanted Al and P atoms in silicon carbide Japanese Journal of Applied Physics, 60, 5, 051001-051001 Japanese Journal of Applied Physics, 60, 5, 051001-051001 Japanese Journal of Applied Physics, 60, 5, 051001-051001 2021/05/01 研究論文(学術雑誌) 公開
Masahiro Hara, Mitsuaki Kaneko, Tsunenobu Kimoto Masahiro Hara, Mitsuaki Kaneko, Tsunenobu Kimoto Masahiro Hara, Mitsuaki Kaneko, Tsunenobu Kimoto Nearly Fermi-level-pinning-free interface in metal/heavily-doped SiC Schottky structures Nearly Fermi-level-pinning-free interface in metal/heavily-doped SiC Schottky structures Nearly Fermi-level-pinning-free interface in metal/heavily-doped SiC Schottky structures Japanese Journal of Applied Physics, 60, SB, SBBD14-SBBD14 Japanese Journal of Applied Physics, 60, SB, SBBD14-SBBD14 Japanese Journal of Applied Physics, 60, SB, SBBD14-SBBD14 2021/05/01 研究論文(学術雑誌) 公開
Keita Tachiki, Takahisa Ono, Takuma Kobayashi, Tsunenobu Kimoto Keita Tachiki, Takahisa Ono, Takuma Kobayashi, Tsunenobu Kimoto Keita Tachiki, Takahisa Ono, Takuma Kobayashi, Tsunenobu Kimoto Short-Channel Effects in SiC MOSFETs Based on Analyses of Saturation Drain Current Short-Channel Effects in SiC MOSFETs Based on Analyses of Saturation Drain Current Short-Channel Effects in SiC MOSFETs Based on Analyses of Saturation Drain Current IEEE Transactions on Electron Devices, 68, 3, 1382-1384 IEEE Transactions on Electron Devices, 68, 3, 1382-1384 IEEE Transactions on Electron Devices, 68, 3, 1382-1384 2021/03 研究論文(学術雑誌) 公開
Keita Tachiki, Mitsuaki Kaneko, Tsunenobu Kimoto Keita Tachiki, Mitsuaki Kaneko, Tsunenobu Kimoto Keita Tachiki, Mitsuaki Kaneko, Tsunenobu Kimoto Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation Applied Physics Express, 14, 3, 031001-031001 Applied Physics Express, 14, 3, 031001-031001 Applied Physics Express, 14, 3, 031001-031001 2021/03/01 研究論文(学術雑誌) 公開
Keita Tachiki, Tsunenobu Kimoto Keita Tachiki, Tsunenobu Kimoto Keita Tachiki, Tsunenobu Kimoto Improvement of Both n- and p-Channel Mobilities in 4H-SiC MOSFETs by High-Temperature N₂ Annealing Improvement of Both n- and p-Channel Mobilities in 4H-SiC MOSFETs by High-Temperature N₂ Annealing Improvement of Both n- and p-Channel Mobilities in 4H-SiC MOSFETs by High-Temperature N₂ Annealing IEEE Transactions on Electron Devices, 68, 2, 638-644 IEEE Transactions on Electron Devices, 68, 2, 638-644 IEEE Transactions on Electron Devices, 68, 2, 638-644 2021/02 研究論文(学術雑誌) 公開
Keita Tachiki, Mitsuaki Kaneko, Takuma Kobayashi, Tsunenobu Kimoto Keita Tachiki, Mitsuaki Kaneko, Takuma Kobayashi, Tsunenobu Kimoto Keita Tachiki, Mitsuaki Kaneko, Takuma Kobayashi, Tsunenobu Kimoto Formation of high-quality SiC(0001)/SiO2 structures by excluding oxidation process with H2 etching before SiO2 deposition and high-temperature N2 annealing Formation of high-quality SiC(0001)/SiO2 structures by excluding oxidation process with H2 etching before SiO2 deposition and high-temperature N2 annealing Formation of high-quality SiC(0001)/SiO2 structures by excluding oxidation process with H2 etching before SiO2 deposition and high-temperature N2 annealing Applied Physics Express, 13, 12, 121002-121002 Applied Physics Express, 13, 12, 121002-121002 Applied Physics Express, 13, 12, 121002-121002 2020/12/01 研究論文(学術雑誌) 公開
M. Kaneko, M. Nakajima, Q. Jin, T. Kimoto M. Kaneko, M. Nakajima, Q. Jin, T. Kimoto M. Kaneko, M. Nakajima, Q. Jin, T. Kimoto Experimental Study on Short-Channel Effects in Double-Gate Silicon Carbide JFETs Experimental Study on Short-Channel Effects in Double-Gate Silicon Carbide JFETs Experimental Study on Short-Channel Effects in Double-Gate Silicon Carbide JFETs IEEE Transactions on Electron Devices, 67, 10, 4538-4540 IEEE Transactions on Electron Devices, 67, 10, 4538-4540 IEEE Transactions on Electron Devices, 67, 10, 4538-4540 2020/10 研究論文(学術雑誌) 公開
Koji Ito, Takuma Kobayashi, Tsunenobu Kimoto Koji Ito, Takuma Kobayashi, Tsunenobu Kimoto Koji Ito, Takuma Kobayashi, Tsunenobu Kimoto Effect of quantum confinement on the defect-induced localized levels in 4H-SiC(0001)/SiO2 systems Effect of quantum confinement on the defect-induced localized levels in 4H-SiC(0001)/SiO2 systems Effect of quantum confinement on the defect-induced localized levels in 4H-SiC(0001)/SiO2 systems Journal of Applied Physics, 128, 9, 095702-095702 Journal of Applied Physics, 128, 9, 095702-095702 Journal of Applied Physics, 128, 9, 095702-095702 2020/09/07 研究論文(学術雑誌) 公開
Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto Grain-boundary structures and their impact on the electrical properties of NiO films deposited by reactive sputtering Grain-boundary structures and their impact on the electrical properties of NiO films deposited by reactive sputtering Grain-boundary structures and their impact on the electrical properties of NiO films deposited by reactive sputtering Thin Solid Films, 709, 138203-138203 Thin Solid Films, 709, 138203-138203 Thin Solid Films, 709, 138203-138203 2020/09 研究論文(学術雑誌) 公開
Daisuke Nakamura, Tsunenobu Kimoto Daisuke Nakamura, Tsunenobu Kimoto Daisuke Nakamura, Tsunenobu Kimoto Transformation of hollow-core screw dislocations: transitional configuration of superscrew dislocations Transformation of hollow-core screw dislocations: transitional configuration of superscrew dislocations Transformation of hollow-core screw dislocations: transitional configuration of superscrew dislocations Japanese Journal of Applied Physics, 59, 9, 095502-095502 Japanese Journal of Applied Physics, 59, 9, 095502-095502 Japanese Journal of Applied Physics, 59, 9, 095502-095502 2020/09/01 研究論文(学術雑誌) 公開
Takuma Kobayashi, Takafumi Okuda, Keita Tachiki, Koji Ito, Yu-ichiro Matsushita, Tsunenobu Kimoto Takuma Kobayashi, Takafumi Okuda, Keita Tachiki, Koji Ito, Yu-ichiro Matsushita, Tsunenobu Kimoto Takuma Kobayashi, Takafumi Okuda, Keita Tachiki, Koji Ito, Yu-ichiro Matsushita, Tsunenobu Kimoto Design and formation of SiC (0001)/SiO2 interfaces via Si deposition followed by low-temperature oxidation and high-temperature nitridation Design and formation of SiC (0001)/SiO2 interfaces via Si deposition followed by low-temperature oxidation and high-temperature nitridation Design and formation of SiC (0001)/SiO2 interfaces via Si deposition followed by low-temperature oxidation and high-temperature nitridation Applied Physics Express, 13, 9, 091003-091003 Applied Physics Express, 13, 9, 091003-091003 Applied Physics Express, 13, 9, 091003-091003 2020/09/01 研究論文(学術雑誌) 公開
Dionysios Stefanakis, Xilun Chi, Takuya Maeda, Mitsuaki Kaneko, Tsunenobu Kimoto Dionysios Stefanakis, Xilun Chi, Takuya Maeda, Mitsuaki Kaneko, Tsunenobu Kimoto Dionysios Stefanakis, Xilun Chi, Takuya Maeda, Mitsuaki Kaneko, Tsunenobu Kimoto Experimental Determination of Impact Ionization Coefficients Along 〈1120〉 in 4H-SiC Experimental Determination of Impact Ionization Coefficients Along 〈1120〉 in 4H-SiC Experimental Determination of Impact Ionization Coefficients Along 〈1120〉 in 4H-SiC IEEE Transactions on Electron Devices, 67, 9, 3740-3744 IEEE Transactions on Electron Devices, 67, 9, 3740-3744 IEEE Transactions on Electron Devices, 67, 9, 3740-3744 2020/09 研究論文(学術雑誌) 公開
M. Kaneko, X. Chi, T. Kimoto M. Kaneko, X. Chi, T. Kimoto M. Kaneko, X. Chi, T. Kimoto Tunneling Current in 4H-SiC p-n Junction Diodes Tunneling Current in 4H-SiC p-n Junction Diodes Tunneling Current in 4H-SiC p-n Junction Diodes IEEE Transactions on Electron Devices, 67, 8, 3329-3334 IEEE Transactions on Electron Devices, 67, 8, 3329-3334 IEEE Transactions on Electron Devices, 67, 8, 3329-3334 2020/08 研究論文(学術雑誌) 公開
Hironobu AKITA, Tsunenobu KIMOTO Hironobu AKITA, Tsunenobu KIMOTO Hironobu AKITA, Tsunenobu KIMOTO Rapid Revolution Speed Control of the Brushless DC Motor for Automotive LIDAR Applications Rapid Revolution Speed Control of the Brushless DC Motor for Automotive LIDAR Applications Rapid Revolution Speed Control of the Brushless DC Motor for Automotive LIDAR Applications IEICE Transactions on Electronics, E103.C, 6, 324-331 IEICE Transactions on Electronics, E103.C, 6, 324-331 IEICE Transactions on Electronics, E103.C, 6, 324-331 2020/06/01 研究論文(学術雑誌) 公開
T. Umeda, Y. Nakano, E. Higa, T. Okuda, T. Kimoto, T. Hosoi, H. Watanabe, M. Sometani, S. Harada T. Umeda, Y. Nakano, E. Higa, T. Okuda, T. Kimoto, T. Hosoi, H. Watanabe, M. Sometani, S. Harada T. Umeda, Y. Nakano, E. Higa, T. Okuda, T. Kimoto, T. Hosoi, H. Watanabe, M. Sometani, S. Harada Electron-spin-resonance and electrically detected-magnetic-resonance characterization on PbC center in various 4H-SiC(0001)/SiO2 interfaces Electron-spin-resonance and electrically detected-magnetic-resonance characterization on PbC center in various 4H-SiC(0001)/SiO2 interfaces Electron-spin-resonance and electrically detected-magnetic-resonance characterization on PbC center in various 4H-SiC(0001)/SiO2 interfaces Journal of Applied Physics, 127, 14, 145301-145301 Journal of Applied Physics, 127, 14, 145301-145301 Journal of Applied Physics, 127, 14, 145301-145301 2020/04/14 研究論文(学術雑誌) 公開
Masahiro Hara, Satoshi Asada, Takuya Maeda, Tsunenobu Kimoto Masahiro Hara, Satoshi Asada, Takuya Maeda, Tsunenobu Kimoto Masahiro Hara, Satoshi Asada, Takuya Maeda, Tsunenobu Kimoto Forward thermionic field emission transport and significant image force lowering caused by high electric field at metal/heavily-doped SiC Schottky interfaces Forward thermionic field emission transport and significant image force lowering caused by high electric field at metal/heavily-doped SiC Schottky interfaces Forward thermionic field emission transport and significant image force lowering caused by high electric field at metal/heavily-doped SiC Schottky interfaces Applied Physics Express, 13, 4, 041001-041001 Applied Physics Express, 13, 4, 041001-041001 Applied Physics Express, 13, 4, 041001-041001 2020/04/01 研究論文(学術雑誌) 公開
Satoshi Asada, Jun Suda, Tsunenobu Kimoto Satoshi Asada, Jun Suda, Tsunenobu Kimoto Satoshi Asada, Jun Suda, Tsunenobu Kimoto Temperature Dependence of Conductivity Modulation in SiC Bipolar Junction Transistors Temperature Dependence of Conductivity Modulation in SiC Bipolar Junction Transistors Temperature Dependence of Conductivity Modulation in SiC Bipolar Junction Transistors IEEE Transactions on Electron Devices, 67, 4, 1699-1704 IEEE Transactions on Electron Devices, 67, 4, 1699-1704 IEEE Transactions on Electron Devices, 67, 4, 1699-1704 2020/04 研究論文(学術雑誌) 公開
Hajime Tanaka, Tsunenobu Kimoto, Nobuya Mori Hajime Tanaka, Tsunenobu Kimoto, Nobuya Mori Hajime Tanaka, Tsunenobu Kimoto, Nobuya Mori Theoretical analysis of band structure effects on impact ionization coefficients in wide-bandgap semiconductors Theoretical analysis of band structure effects on impact ionization coefficients in wide-bandgap semiconductors Theoretical analysis of band structure effects on impact ionization coefficients in wide-bandgap semiconductors APPLIED PHYSICS EXPRESS, 13, 4 APPLIED PHYSICS EXPRESS, 13, 4 APPLIED PHYSICS EXPRESS, 13, 4 2020/04 英語 研究論文(学術雑誌) 公開
A. Iijima, T. Kimoto A. Iijima, T. Kimoto A. Iijima, T. Kimoto Estimation of the critical condition for expansion/contraction of single Shockley stacking faults in 4H-SiC PiN diodes Estimation of the critical condition for expansion/contraction of single Shockley stacking faults in 4H-SiC PiN diodes Estimation of the critical condition for expansion/contraction of single Shockley stacking faults in 4H-SiC PiN diodes Applied Physics Letters, 116, 9, 092105-092105 Applied Physics Letters, 116, 9, 092105-092105 Applied Physics Letters, 116, 9, 092105-092105 2020/03/02 研究論文(学術雑誌) 公開
Takuji Hosoi, Shuji Azumo, Yusaku Kashiwagi, Shigetoshi Hosaka, Kenji Yamamoto, Masatoshi Aketa, Hirokazu Asahara, Takashi Nakamura, Tsunenobu Kimoto, Takayoshi Shimura, Heiji Watanabe Takuji Hosoi, Shuji Azumo, Yusaku Kashiwagi, Shigetoshi Hosaka, Kenji Yamamoto, Masatoshi Aketa, Hirokazu Asahara, Takashi Nakamura, Tsunenobu Kimoto, Takayoshi Shimura, Heiji Watanabe Takuji Hosoi, Shuji Azumo, Yusaku Kashiwagi, Shigetoshi Hosaka, Kenji Yamamoto, Masatoshi Aketa, Hirokazu Asahara, Takashi Nakamura, Tsunenobu Kimoto, Takayoshi Shimura, Heiji Watanabe Comprehensive and systematic design of metal/high-k gate stack for high-performance and highly reliable SiC power MOSFET Comprehensive and systematic design of metal/high-k gate stack for high-performance and highly reliable SiC power MOSFET Comprehensive and systematic design of metal/high-k gate stack for high-performance and highly reliable SiC power MOSFET Japanese Journal of Applied Physics, 59, 2, 021001-021001 Japanese Journal of Applied Physics, 59, 2, 021001-021001 Japanese Journal of Applied Physics, 59, 2, 021001-021001 2020/02/01 研究論文(学術雑誌) 公開
Mitsuaki Kaneko, Kazuto Hirai, Tsunenobu Kimoto, Jun Suda Mitsuaki Kaneko, Kazuto Hirai, Tsunenobu Kimoto, Jun Suda Mitsuaki Kaneko, Kazuto Hirai, Tsunenobu Kimoto, Jun Suda Multi-cycle RHEED oscillation under nitrogen supply in alternative source supply AlN growth by rf-MBE Multi-cycle RHEED oscillation under nitrogen supply in alternative source supply AlN growth by rf-MBE Multi-cycle RHEED oscillation under nitrogen supply in alternative source supply AlN growth by rf-MBE Applied Physics Express, 13, 2, 025503-025503 Applied Physics Express, 13, 2, 025503-025503 Applied Physics Express, 13, 2, 025503-025503 2020/02/01 研究論文(学術雑誌) 公開
Naoki Kanegami, Yusuke Nishi, Tsunenobu Kimoto Naoki Kanegami, Yusuke Nishi, Tsunenobu Kimoto Naoki Kanegami, Yusuke Nishi, Tsunenobu Kimoto Unique resistive switching phenomena exhibiting both filament-type and interface-type switching in Ti/Pr0.7Ca0.3MnO3−δ/Pt ReRAM cells Unique resistive switching phenomena exhibiting both filament-type and interface-type switching in Ti/Pr0.7Ca0.3MnO3−δ/Pt ReRAM cells Unique resistive switching phenomena exhibiting both filament-type and interface-type switching in Ti/Pr0.7Ca0.3MnO3−δ/Pt ReRAM cells Applied Physics Letters, 116, 1, 013501-013501 Applied Physics Letters, 116, 1, 013501-013501 Applied Physics Letters, 116, 1, 013501-013501 2020/01/06 研究論文(学術雑誌) 公開
Ei Shigematsu, Ryo Ohshima, Yuichiro Ando, Teruya Shinjo, Tsunenobu Kimoto, Masashi Shiraishi Ei Shigematsu, Ryo Ohshima, Yuichiro Ando, Teruya Shinjo, Tsunenobu Kimoto, Masashi Shiraishi Spin transport in n-type 3C-SiC observed in a lateral spin-pumping device Spin transport in n-type 3C-SiC observed in a lateral spin-pumping device Spin transport in n-type 3C-SiC observed in a lateral spin-pumping device Solid State Communications, 305, 113754 Solid State Communications, 305, 113754 Solid State Communications, 305, 113754 2020 英語 研究論文(学術雑誌) 公開
細井卓治, 大迫桃恵, 伊藤滉二, 志村考功, 木本恒暢, 渡部平司 細井卓治, 大迫桃恵, 伊藤滉二, 志村考功, 木本恒暢, 渡部平司 CO2アニールによるSiO2/SiC界面窒素量制御とSiC MOSFET信頼性向上 CO2アニールによるSiO2/SiC界面窒素量制御とSiC MOSFET信頼性向上 2019/12 日本語 研究論文(その他学術会議資料等) 公開
Toshiki Miyatani, Yusuke Nishi, Tsunenobu Kimoto Toshiki Miyatani, Yusuke Nishi, Tsunenobu Kimoto Toshiki Miyatani, Yusuke Nishi, Tsunenobu Kimoto Dominant conduction mechanism in TaO x -based resistive switching devices Dominant conduction mechanism in TaO x -based resistive switching devices Dominant conduction mechanism in TaO x -based resistive switching devices Japanese Journal of Applied Physics, 58, 9, 090914-090914 Japanese Journal of Applied Physics, 58, 9, 090914-090914 Japanese Journal of Applied Physics, 58, 9, 090914-090914 2019/09/01 研究論文(学術雑誌) 公開
Takuya Maeda, Xilun Chi, Hajime Tanaka, Masahiro Horita, Jun Suda, Tsunenobu Kimoto Takuya Maeda, Xilun Chi, Hajime Tanaka, Masahiro Horita, Jun Suda, Tsunenobu Kimoto Takuya Maeda, Xilun Chi, Hajime Tanaka, Masahiro Horita, Jun Suda, Tsunenobu Kimoto Franz–Keldysh effect in 4H-SiC p–n junction diodes under high electric field along the <11-20> direction Franz–Keldysh effect in 4H-SiC p–n junction diodes under high electric field along the <11-20> direction Franz–Keldysh effect in 4H-SiC p–n junction diodes under high electric field along the <11-20> direction Japanese Journal of Applied Physics, 58, 9, 091007 Japanese Journal of Applied Physics, 58, 9, 091007 Japanese Journal of Applied Physics, 58, 9, 091007 2019/08 公開
M. Nakajima, M. Kaneko, T. Kimoto M. Nakajima, M. Kaneko, T. Kimoto M. Nakajima, M. Kaneko, T. Kimoto Normally-off 400 °c Operation of n- and p-JFETs with a Side-Gate Structure Fabricated by Ion Implantation into a High-Purity Semi-Insulating SiC Substrate Normally-off 400 °c Operation of n- and p-JFETs with a Side-Gate Structure Fabricated by Ion Implantation into a High-Purity Semi-Insulating SiC Substrate Normally-off 400 °c Operation of n- and p-JFETs with a Side-Gate Structure Fabricated by Ion Implantation into a High-Purity Semi-Insulating SiC Substrate IEEE Electron Device Letters, 40, 866-869 IEEE Electron Device Letters, 40, 866-869 IEEE Electron Device Letters, 40, 866-869 2019/06 公開
Toshiki Miyatani, Yusuke Nishi, Tsunenobu Kimoto Toshiki Miyatani, Yusuke Nishi, Tsunenobu Kimoto Toshiki Miyatani, Yusuke Nishi, Tsunenobu Kimoto Two modes of bipolar resistive switching characteristics in asymmetric TaOx-based ReRAM cells Two modes of bipolar resistive switching characteristics in asymmetric TaOx-based ReRAM cells Two modes of bipolar resistive switching characteristics in asymmetric TaOx-based ReRAM cells MRS Advances, 4, 48, 2601-2607 MRS Advances, 4, 48, 2601-2607 MRS Advances, 4, 48, 2601-2607 2019 研究論文(学術雑誌) 公開
Mitsuaki Kaneko, Ulrike Grossner, Tsunenobu Kimoto Mitsuaki Kaneko, Ulrike Grossner, Tsunenobu Kimoto Mitsuaki Kaneko, Ulrike Grossner, Tsunenobu Kimoto SIC vertical-channel n-and P-JFETS fully fabricated by ion implantation SIC vertical-channel n-and P-JFETS fully fabricated by ion implantation SIC vertical-channel n-and P-JFETS fully fabricated by ion implantation Materials Science Forum, 963 MSF, 841-844 Materials Science Forum, 963 MSF, 841-844 Materials Science Forum, 963 MSF, 841-844 2019/01 公開
Masaya Arahata, Yusuke Nishi, Tsunenobu Kimoto Masaya Arahata, Yusuke Nishi, Tsunenobu Kimoto Masaya Arahata, Yusuke Nishi, Tsunenobu Kimoto Effects of TiO2 crystallinity and oxygen composition on forming characteristics in Pt/TiO2/Pt resistive switching cells Effects of TiO2 crystallinity and oxygen composition on forming characteristics in Pt/TiO2/Pt resistive switching cells Effects of TiO2 crystallinity and oxygen composition on forming characteristics in Pt/TiO2/Pt resistive switching cells AIP Advances, 8, 12, 125010-125010 AIP Advances, 8, 12, 125010-125010 AIP Advances, 8, 12, 125010-125010 2018/12 研究論文(学術雑誌) 公開
Yusuke Nishi, Hiroki Sasakura, Tsunenobu Kimoto Yusuke Nishi, Hiroki Sasakura, Tsunenobu Kimoto Yusuke Nishi, Hiroki Sasakura, Tsunenobu Kimoto Conductance fluctuation in NiO-based resistive switching memory Conductance fluctuation in NiO-based resistive switching memory Conductance fluctuation in NiO-based resistive switching memory Journal of Applied Physics, 124, 15, 152134-152134 Journal of Applied Physics, 124, 15, 152134-152134 Journal of Applied Physics, 124, 15, 152134-152134 2018/10/21 研究論文(学術雑誌) 公開
Masashi Kato, Shinya Katahira, Yoshihito Ichikawa, Shunta Harada, Tsunenobu Kimoto Masashi Kato, Shinya Katahira, Yoshihito Ichikawa, Shunta Harada, Tsunenobu Kimoto Masashi Kato, Shinya Katahira, Yoshihito Ichikawa, Shunta Harada, Tsunenobu Kimoto Observation of carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC Observation of carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC Observation of carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC Journal of Applied Physics, 124, 9, 095702 Journal of Applied Physics, 124, 9, 095702 Journal of Applied Physics, 124, 9, 095702 2018/09/04 英語 研究論文(学術雑誌) 公開
Maeda Takuya, Chi Xilun, Horita Masahiro, Suda Jun, Kimoto Tsunenobu Maeda Takuya, Chi Xilun, Horita Masahiro, Suda Jun, Kimoto Tsunenobu Maeda Takuya, Chi Xilun, Horita Masahiro, Suda Jun, Kimoto Tsunenobu Phonon-assisted optical absorption due to Franz-Keldysh effect in 4H-SiC p-n junction diode under high reverse bias voltage Phonon-assisted optical absorption due to Franz-Keldysh effect in 4H-SiC p-n junction diode under high reverse bias voltage Phonon-assisted optical absorption due to Franz-Keldysh effect in 4H-SiC p-n junction diode under high reverse bias voltage APPLIED PHYSICS EXPRESS, 11, 9 APPLIED PHYSICS EXPRESS, 11, 9 APPLIED PHYSICS EXPRESS, 11, 9 2018/09 英語 研究論文(学術雑誌) 公開
Y. Ichikawa, M. Ichimura, T. Kimoto, M. Kato Y. Ichikawa, M. Ichimura, T. Kimoto, M. Kato Y. Ichikawa, M. Ichimura, T. Kimoto, M. Kato Passivation of surface recombination at the Si-face of 4H-SiC by acidic solutions Passivation of surface recombination at the Si-face of 4H-SiC by acidic solutions Passivation of surface recombination at the Si-face of 4H-SiC by acidic solutions ECS J. Solid St. Sci. Technol., 7, 8, Q127-Q130 ECS J. Solid St. Sci. Technol., 7, 8, Q127-Q130 ECS J. Solid St. Sci. Technol., 7, 8, Q127-Q130 2018/08 英語 研究論文(学術雑誌) 公開
Keita Tachiki, Takahisa Ono, Takuma Kobayashi, Hajime Tanaka, Tsunenobu Kimoto Keita Tachiki, Takahisa Ono, Takuma Kobayashi, Hajime Tanaka, Tsunenobu Kimoto Keita Tachiki, Takahisa Ono, Takuma Kobayashi, Hajime Tanaka, Tsunenobu Kimoto Estimation of Threshold Voltage in SiC Short-Channel MOSFETs Estimation of Threshold Voltage in SiC Short-Channel MOSFETs Estimation of Threshold Voltage in SiC Short-Channel MOSFETs IEEE Transactions on Electron Devices, 65, 7, 3077 IEEE Transactions on Electron Devices, 65, 7, 3077 IEEE Transactions on Electron Devices, 65, 7, 3077 2018/07 公開
Kanegae Kazutaka, Kaneko Mitsuaki, Kimoto Tsunenobu, Horita Masahiro, Suda Jun Kanegae Kazutaka, Kaneko Mitsuaki, Kimoto Tsunenobu, Horita Masahiro, Suda Jun Kanegae Kazutaka, Kaneko Mitsuaki, Kimoto Tsunenobu, Horita Masahiro, Suda Jun Characterization of carrier concentration and mobility of GaN bulk substrates by Raman scattering and infrared reflectance spectroscopies Characterization of carrier concentration and mobility of GaN bulk substrates by Raman scattering and infrared reflectance spectroscopies Characterization of carrier concentration and mobility of GaN bulk substrates by Raman scattering and infrared reflectance spectroscopies JAPANESE JOURNAL OF APPLIED PHYSICS, 57, 7 JAPANESE JOURNAL OF APPLIED PHYSICS, 57, 7 JAPANESE JOURNAL OF APPLIED PHYSICS, 57, 7 2018/07 英語 研究論文(学術雑誌) 公開
Kanegae Kazutaka, Horita Masahiro, Kimoto Tsunenobu, Suda Jun Kanegae Kazutaka, Horita Masahiro, Kimoto Tsunenobu, Suda Jun Kanegae Kazutaka, Horita Masahiro, Kimoto Tsunenobu, Suda Jun Accurate method for estimating hole trap concentration in n-type GaN via minority carrier transient spectroscopy Accurate method for estimating hole trap concentration in n-type GaN via minority carrier transient spectroscopy Accurate method for estimating hole trap concentration in n-type GaN via minority carrier transient spectroscopy APPLIED PHYSICS EXPRESS, 11, 7 APPLIED PHYSICS EXPRESS, 11, 7 APPLIED PHYSICS EXPRESS, 11, 7 2018/07 英語 研究論文(学術雑誌) 公開
Maeda Takuya, Narita Tetsuo, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun Maeda Takuya, Narita Tetsuo, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun Maeda Takuya, Narita Tetsuo, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage APPLIED PHYSICS LETTERS, 112, 25 APPLIED PHYSICS LETTERS, 112, 25 APPLIED PHYSICS LETTERS, 112, 25 2018/06/18 英語 研究論文(学術雑誌) 公開
Kaneko M, Kimoto T Kaneko M, Kimoto T Kaneko M, Kimoto T High-Temperature Operation of n- and p-Channel JFETs Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate High-Temperature Operation of n- and p-Channel JFETs Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate High-Temperature Operation of n- and p-Channel JFETs Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate IEEE ELECTRON DEVICE LETTERS, 39, 5, 723-726 IEEE ELECTRON DEVICE LETTERS, 39, 5, 723-726 IEEE ELECTRON DEVICE LETTERS, 39, 5, 723-726 2018/05 公開
Sawada Naoki, Narita Tetsuo, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Horita Masahiro, Kimoto Tsunenobu, Suda Jun Sawada Naoki, Narita Tetsuo, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Horita Masahiro, Kimoto Tsunenobu, Suda Jun Sawada Naoki, Narita Tetsuo, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Horita Masahiro, Kimoto Tsunenobu, Suda Jun Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations APPLIED PHYSICS EXPRESS, 11, 4 APPLIED PHYSICS EXPRESS, 11, 4 APPLIED PHYSICS EXPRESS, 11, 4 2018/04 英語 研究論文(学術雑誌) 公開
Tanaka H, Asada S, Kimoto T, Suda J Tanaka H, Asada S, Kimoto T, Suda J Tanaka H, Asada S, Kimoto T, Suda J Theoretical analysis of Hall factor and hole mobility in p-type 4H-SiC considering anisotropic valence band structure Theoretical analysis of Hall factor and hole mobility in p-type 4H-SiC considering anisotropic valence band structure Theoretical analysis of Hall factor and hole mobility in p-type 4H-SiC considering anisotropic valence band structure Journal of Applied Physics, 123, 24, 245704 Journal of Applied Physics, 123, 24, 245704 Journal of Applied Physics, 123, 24, 245704 2018 公開
Tanaka H, Suda J, Kimoto T Tanaka H, Suda J, Kimoto T Tanaka H, Suda J, Kimoto T Impacts of energy relaxation process on quasi-ballistic hole transport capability in germanium and silicon nanowires Impacts of energy relaxation process on quasi-ballistic hole transport capability in germanium and silicon nanowires Impacts of energy relaxation process on quasi-ballistic hole transport capability in germanium and silicon nanowires Journal of Applied Physics, 123, 2, 024305 Journal of Applied Physics, 123, 2, 024305 Journal of Applied Physics, 123, 2, 024305 2018 公開
Kaneko M, Ueta S, Horita M, Kimoto T, Suda J Kaneko M, Ueta S, Horita M, Kimoto T, Suda J Kaneko M, Ueta S, Horita M, Kimoto T, Suda J Deep-ultraviolet light emission from 4H-AlN/4H-GaN short-period superlattice grown on 4H-SiC(11(2)over-bar0) Deep-ultraviolet light emission from 4H-AlN/4H-GaN short-period superlattice grown on 4H-SiC(11(2)over-bar0) Deep-ultraviolet light emission from 4H-AlN/4H-GaN short-period superlattice grown on 4H-SiC(11(2)over-bar0) APPLIED PHYSICS LETTERS, 112, 1 APPLIED PHYSICS LETTERS, 112, 1 APPLIED PHYSICS LETTERS, 112, 1 2018/01/01 公開
T. Okuda, T. Miyazawa, H. Tsuchida, T. Kimoto, J. Suda T. Okuda, T. Miyazawa, H. Tsuchida, T. Kimoto, J. Suda T. Okuda, T. Miyazawa, H. Tsuchida, T. Kimoto, J. Suda Carrier Lifetimes in Lightly-Doped p-Type 4H-SiC Epitaxial Layers Enhanced by Post-growth Processes and Surface Passivation Carrier Lifetimes in Lightly-Doped p-Type 4H-SiC Epitaxial Layers Enhanced by Post-growth Processes and Surface Passivation Carrier Lifetimes in Lightly-Doped p-Type 4H-SiC Epitaxial Layers Enhanced by Post-growth Processes and Surface Passivation JOURNAL OF ELECTRONIC MATERIALS, 46, 11, 6411-6417 JOURNAL OF ELECTRONIC MATERIALS, 46, 11, 6411-6417 JOURNAL OF ELECTRONIC MATERIALS, 46, 11, 6411-6417 2017/11 英語 研究論文(学術雑誌) 公開
Daisuke Nakamura, Taishi Kimura, Tetsuo Narita, Akitoshi Suzumura, Tsunenobu Kimoto, Kenji Nakashima Daisuke Nakamura, Taishi Kimura, Tetsuo Narita, Akitoshi Suzumura, Tsunenobu Kimoto, Kenji Nakashima Daisuke Nakamura, Taishi Kimura, Tetsuo Narita, Akitoshi Suzumura, Tsunenobu Kimoto, Kenji Nakashima TaC-coated graphite prepared via a wet ceramic process: Application to CVD susceptors for epitaxial growth of wide-bandgap semiconductors TaC-coated graphite prepared via a wet ceramic process: Application to CVD susceptors for epitaxial growth of wide-bandgap semiconductors TaC-coated graphite prepared via a wet ceramic process: Application to CVD susceptors for epitaxial growth of wide-bandgap semiconductors JOURNAL OF CRYSTAL GROWTH, 478, 163-173 JOURNAL OF CRYSTAL GROWTH, 478, 163-173 JOURNAL OF CRYSTAL GROWTH, 478, 163-173 2017/11 英語 研究論文(学術雑誌) 公開
Seigo Mori, Masatoshi Aketa, Takui Sakaguchi, Yuichiro Nanen, Hirokazu Asahara, Takashi Nakamura, Tsunenobu Kimoto Seigo Mori, Masatoshi Aketa, Takui Sakaguchi, Yuichiro Nanen, Hirokazu Asahara, Takashi Nakamura, Tsunenobu Kimoto Seigo Mori, Masatoshi Aketa, Takui Sakaguchi, Yuichiro Nanen, Hirokazu Asahara, Takashi Nakamura, Tsunenobu Kimoto High-Temperature Characteristics of 3-kV 4H-SiC Reverse Blocking MOSFET for High-Performance Bidirectional Switch High-Temperature Characteristics of 3-kV 4H-SiC Reverse Blocking MOSFET for High-Performance Bidirectional Switch High-Temperature Characteristics of 3-kV 4H-SiC Reverse Blocking MOSFET for High-Performance Bidirectional Switch IEEE TRANSACTIONS ON ELECTRON DEVICES, 64, 10, 4167-4174 IEEE TRANSACTIONS ON ELECTRON DEVICES, 64, 10, 4167-4174 IEEE TRANSACTIONS ON ELECTRON DEVICES, 64, 10, 4167-4174 2017/10 英語 研究論文(学術雑誌) 公開
Satoshi Asada, Tsunenobu Kimoto, Ivan G. Ivanov Satoshi Asada, Tsunenobu Kimoto, Ivan G. Ivanov Satoshi Asada, Tsunenobu Kimoto, Ivan G. Ivanov Calibration on wide-ranging aluminum doping concentrations by photoluminescence in high-quality uncompensated p-type 4H-SiC Calibration on wide-ranging aluminum doping concentrations by photoluminescence in high-quality uncompensated p-type 4H-SiC Calibration on wide-ranging aluminum doping concentrations by photoluminescence in high-quality uncompensated p-type 4H-SiC APPLIED PHYSICS LETTERS, 111, 7 APPLIED PHYSICS LETTERS, 111, 7 APPLIED PHYSICS LETTERS, 111, 7 2017/08 英語 研究論文(学術雑誌) 公開
Takuma Kobayashi, Tsunenobu Kimoto Takuma Kobayashi, Tsunenobu Kimoto Takuma Kobayashi, Tsunenobu Kimoto Carbon ejection from a SiO2/SiC(0001) interface by annealing in high-purity Ar Carbon ejection from a SiO2/SiC(0001) interface by annealing in high-purity Ar Carbon ejection from a SiO2/SiC(0001) interface by annealing in high-purity Ar APPLIED PHYSICS LETTERS, 111, 6 APPLIED PHYSICS LETTERS, 111, 6 APPLIED PHYSICS LETTERS, 111, 6 2017/08 英語 研究論文(学術雑誌) 公開
Satoshi Asada, Tsunenobu Kimoto, Jun Suda Satoshi Asada, Tsunenobu Kimoto, Jun Suda Satoshi Asada, Tsunenobu Kimoto, Jun Suda Effect of Postoxidation Nitridation on Forward Current-Voltage Characteristics in 4H-SiC Mesa p-n Diodes Passivated With SiO2 Effect of Postoxidation Nitridation on Forward Current-Voltage Characteristics in 4H-SiC Mesa p-n Diodes Passivated With SiO2 Effect of Postoxidation Nitridation on Forward Current-Voltage Characteristics in 4H-SiC Mesa p-n Diodes Passivated With SiO2 IEEE TRANSACTIONS ON ELECTRON DEVICES, 64, 7, 3016-3018 IEEE TRANSACTIONS ON ELECTRON DEVICES, 64, 7, 3016-3018 IEEE TRANSACTIONS ON ELECTRON DEVICES, 64, 7, 3016-3018 2017/07 英語 研究論文(学術雑誌) 公開
Hiroaki Fujihara, Jun Suda, Tsunenobu Kimoto Hiroaki Fujihara, Jun Suda, Tsunenobu Kimoto Hiroaki Fujihara, Jun Suda, Tsunenobu Kimoto Electrical properties of n- and p-type 4H-SiC formed by ion implantation into high-purity semi-insulating substrates Electrical properties of n- and p-type 4H-SiC formed by ion implantation into high-purity semi-insulating substrates Electrical properties of n- and p-type 4H-SiC formed by ion implantation into high-purity semi-insulating substrates JAPANESE JOURNAL OF APPLIED PHYSICS, 56, 7 JAPANESE JOURNAL OF APPLIED PHYSICS, 56, 7 JAPANESE JOURNAL OF APPLIED PHYSICS, 56, 7 2017/07 英語 研究論文(学術雑誌) 公開
Takuya Maeda, Masaya Okada, Masaki Ueno, Yoshiyuki Yamamoto, Tsunenobu Kimoto, Masahiro Horita, Jun Suda Takuya Maeda, Masaya Okada, Masaki Ueno, Yoshiyuki Yamamoto, Tsunenobu Kimoto, Masahiro Horita, Jun Suda Takuya Maeda, Masaya Okada, Masaki Ueno, Yoshiyuki Yamamoto, Tsunenobu Kimoto, Masahiro Horita, Jun Suda Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode APPLIED PHYSICS EXPRESS, 10, 5 APPLIED PHYSICS EXPRESS, 10, 5 APPLIED PHYSICS EXPRESS, 10, 5 2017/05 英語 研究論文(学術雑誌) 公開
Takuma Kobayashi, Seiya Nakazawa, Takafumi Okuda, Jun Suda, Tsunenobu Kimoto Takuma Kobayashi, Seiya Nakazawa, Takafumi Okuda, Jun Suda, Tsunenobu Kimoto Takuma Kobayashi, Seiya Nakazawa, Takafumi Okuda, Jun Suda, Tsunenobu Kimoto Interface properties of NO-annealed 4H-SiC (0001), (11(2)over-bar0), and (1(1)over-bar00) MOS structures with heavily doped p-bodies Interface properties of NO-annealed 4H-SiC (0001), (11(2)over-bar0), and (1(1)over-bar00) MOS structures with heavily doped p-bodies Interface properties of NO-annealed 4H-SiC (0001), (11(2)over-bar0), and (1(1)over-bar00) MOS structures with heavily doped p-bodies JOURNAL OF APPLIED PHYSICS, 121, 14 JOURNAL OF APPLIED PHYSICS, 121, 14 JOURNAL OF APPLIED PHYSICS, 121, 14 2017/04 英語 研究論文(学術雑誌) 公開
Takuma Kobayashi, Jun Suda, Tsunenobu Kimoto Takuma Kobayashi, Jun Suda, Tsunenobu Kimoto Takuma Kobayashi, Jun Suda, Tsunenobu Kimoto Reduction of interface state density in SiC (0001) MOS structures by post-oxidation Ar annealing at high temperature Reduction of interface state density in SiC (0001) MOS structures by post-oxidation Ar annealing at high temperature Reduction of interface state density in SiC (0001) MOS structures by post-oxidation Ar annealing at high temperature AIP ADVANCES, 7, 4 AIP ADVANCES, 7, 4 AIP ADVANCES, 7, 4 2017/04 英語 研究論文(学術雑誌) 公開
Hiroki Niwa, Jun Suda, Tsunenobu Kimoto Hiroki Niwa, Jun Suda, Tsunenobu Kimoto Hiroki Niwa, Jun Suda, Tsunenobu Kimoto Ultrahigh-Voltage SiC MPS Diodes With Hybrid Unipolar/Bipolar Operation Ultrahigh-Voltage SiC MPS Diodes With Hybrid Unipolar/Bipolar Operation Ultrahigh-Voltage SiC MPS Diodes With Hybrid Unipolar/Bipolar Operation IEEE TRANSACTIONS ON ELECTRON DEVICES, 64, 3, 874-881 IEEE TRANSACTIONS ON ELECTRON DEVICES, 64, 3, 874-881 IEEE TRANSACTIONS ON ELECTRON DEVICES, 64, 3, 874-881 2017/03 英語 研究論文(学術雑誌) 公開
Akifumi Iijima, Isaho Kamata, Hidekazu Tsuchida, Jun Suda, Tsunenobu Kimoto Akifumi Iijima, Isaho Kamata, Hidekazu Tsuchida, Jun Suda, Tsunenobu Kimoto Akifumi Iijima, Isaho Kamata, Hidekazu Tsuchida, Jun Suda, Tsunenobu Kimoto Correlation between shapes of Shockley stacking faults and structures of basal plane dislocations in 4H-SiC epilayers Correlation between shapes of Shockley stacking faults and structures of basal plane dislocations in 4H-SiC epilayers Correlation between shapes of Shockley stacking faults and structures of basal plane dislocations in 4H-SiC epilayers PHILOSOPHICAL MAGAZINE, 97, 30, 2736-2752 PHILOSOPHICAL MAGAZINE, 97, 30, 2736-2752 PHILOSOPHICAL MAGAZINE, 97, 30, 2736-2752 2017 英語 研究論文(学術雑誌) 公開
Tanaka H, Suda J, Kimoto T Tanaka H, Suda J, Kimoto T Tanaka H, Suda J, Kimoto T Analysis of High-Field Hole Transport in Germanium and Silicon Nanowires Based on Boltzmann's Transport Equation Analysis of High-Field Hole Transport in Germanium and Silicon Nanowires Based on Boltzmann's Transport Equation Analysis of High-Field Hole Transport in Germanium and Silicon Nanowires Based on Boltzmann's Transport Equation IEEE Transactions on Nanotechnology, 16, 1, 118-125 IEEE Transactions on Nanotechnology, 16, 1, 118-125 IEEE Transactions on Nanotechnology, 16, 1, 118-125 2017 英語 研究論文(学術雑誌) 公開
Kaneko M, Kimoto T, Suda J Kaneko M, Kimoto T, Suda J Kaneko M, Kimoto T, Suda J Phonon frequencies of a highly strained AIN layer coherently grown on 6H-SiC (0001) Phonon frequencies of a highly strained AIN layer coherently grown on 6H-SiC (0001) Phonon frequencies of a highly strained AIN layer coherently grown on 6H-SiC (0001) AIP ADVANCES, 7, 1 AIP ADVANCES, 7, 1 AIP ADVANCES, 7, 1 2017/01 公開
T. Kimoto, K. Kawahara, B. Zippelius, E. Saito, J. Suda T. Kimoto, K. Kawahara, B. Zippelius, E. Saito, J. Suda T. Kimoto, K. Kawahara, B. Zippelius, E. Saito, J. Suda Control of carbon vacancy in SiC toward ultrahigh-voltage power devices Control of carbon vacancy in SiC toward ultrahigh-voltage power devices Control of carbon vacancy in SiC toward ultrahigh-voltage power devices SUPERLATTICES AND MICROSTRUCTURES, 99, 151-157 SUPERLATTICES AND MICROSTRUCTURES, 99, 151-157 SUPERLATTICES AND MICROSTRUCTURES, 99, 151-157 2016/11 英語 研究論文(学術雑誌) 公開
Tsunenobu Kimoto, Kyosuke Yamada, Hiroki Niwa, Jun Suda Tsunenobu Kimoto, Kyosuke Yamada, Hiroki Niwa, Jun Suda Tsunenobu Kimoto, Kyosuke Yamada, Hiroki Niwa, Jun Suda Promise and Challenges of High-Voltage SiC Bipolar Power Devices Promise and Challenges of High-Voltage SiC Bipolar Power Devices Promise and Challenges of High-Voltage SiC Bipolar Power Devices ENERGIES, 9, 11 ENERGIES, 9, 11 ENERGIES, 9, 11 2016/11 英語 研究論文(学術雑誌) 公開
Yusuke Nishi, Tsunenobu Kimoto Yusuke Nishi, Tsunenobu Kimoto Yusuke Nishi, Tsunenobu Kimoto Effect of NiO crystallinity on forming characteristics in Pt/NiO/Pt cells as resistive switching memories Effect of NiO crystallinity on forming characteristics in Pt/NiO/Pt cells as resistive switching memories Effect of NiO crystallinity on forming characteristics in Pt/NiO/Pt cells as resistive switching memories JOURNAL OF APPLIED PHYSICS, 120, 11 JOURNAL OF APPLIED PHYSICS, 120, 11 JOURNAL OF APPLIED PHYSICS, 120, 11 2016/09 英語 研究論文(学術雑誌) 公開
Hajime Tanaka, Jun Suda, Tsunenobu Kimoto Hajime Tanaka, Jun Suda, Tsunenobu Kimoto Hajime Tanaka, Jun Suda, Tsunenobu Kimoto Analysis of ballistic and quasi-ballistic hole transport properties in germanium nanowires based on an extended “Top of the Barrier” model Analysis of ballistic and quasi-ballistic hole transport properties in germanium nanowires based on an extended “Top of the Barrier” model Analysis of ballistic and quasi-ballistic hole transport properties in germanium nanowires based on an extended “Top of the Barrier” model Solid-State Electronics, 123, 143-149 Solid-State Electronics, 123, 143-149 Solid-State Electronics, 123, 143-149 2016/09 英語 研究論文(学術雑誌) 公開
Masanobu Yoshikawa, Kenichi Kosaka, Hirohumi Seki, Tsunenobu Kimoto Masanobu Yoshikawa, Kenichi Kosaka, Hirohumi Seki, Tsunenobu Kimoto Masanobu Yoshikawa, Kenichi Kosaka, Hirohumi Seki, Tsunenobu Kimoto Stress Characterization of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) using Raman Spectroscopy and the Finite Element Method Stress Characterization of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) using Raman Spectroscopy and the Finite Element Method Stress Characterization of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) using Raman Spectroscopy and the Finite Element Method APPLIED SPECTROSCOPY, 70, 7, 1209-1213 APPLIED SPECTROSCOPY, 70, 7, 1209-1213 APPLIED SPECTROSCOPY, 70, 7, 1209-1213 2016/07 英語 研究論文(学術雑誌) 公開
Tsunenobu Kimoto Tsunenobu Kimoto Tsunenobu Kimoto Bulk and epitaxial growth of silicon carbide Bulk and epitaxial growth of silicon carbide Bulk and epitaxial growth of silicon carbide PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 62, 2, 329-351 PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 62, 2, 329-351 PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 62, 2, 329-351 2016/06 英語 研究論文(学術雑誌) 公開
Eiji Saito, Jun Suda, Tsunenobu Kimoto Eiji Saito, Jun Suda, Tsunenobu Kimoto Eiji Saito, Jun Suda, Tsunenobu Kimoto Control of carrier lifetime of thick n-type 4H-SiC epilayers by high-temperature Ar annealing Control of carrier lifetime of thick n-type 4H-SiC epilayers by high-temperature Ar annealing Control of carrier lifetime of thick n-type 4H-SiC epilayers by high-temperature Ar annealing APPLIED PHYSICS EXPRESS, 9, 6 APPLIED PHYSICS EXPRESS, 9, 6 APPLIED PHYSICS EXPRESS, 9, 6 2016/06 英語 研究論文(学術雑誌) 公開
Takafumi Okuda, Takuma Kobayashi, Tsunenobu Kimoto, Jun Suda Takafumi Okuda, Takuma Kobayashi, Tsunenobu Kimoto, Jun Suda Takafumi Okuda, Takuma Kobayashi, Tsunenobu Kimoto, Jun Suda Surface passivation on 4H-SiC epitaxial layers by SiO2 with POCl3 annealing Surface passivation on 4H-SiC epitaxial layers by SiO2 with POCl3 annealing Surface passivation on 4H-SiC epitaxial layers by SiO2 with POCl3 annealing APPLIED PHYSICS EXPRESS, 9, 5 APPLIED PHYSICS EXPRESS, 9, 5 APPLIED PHYSICS EXPRESS, 9, 5 2016/05 英語 研究論文(学術雑誌) 公開
Mitsuaki Kaneko, Tsunenobu Kimoto, Jun Suda Mitsuaki Kaneko, Tsunenobu Kimoto, Jun Suda Mitsuaki Kaneko, Tsunenobu Kimoto, Jun Suda Strain control in AlN top layer by inserting an ultrathin GaN interlayer on an AlN template coherently grown on SiC(0001) by PAMBE Strain control in AlN top layer by inserting an ultrathin GaN interlayer on an AlN template coherently grown on SiC(0001) by PAMBE Strain control in AlN top layer by inserting an ultrathin GaN interlayer on an AlN template coherently grown on SiC(0001) by PAMBE PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 253, 5, 814-818 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 253, 5, 814-818 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 253, 5, 814-818 2016/05 英語 研究論文(学術雑誌) 公開
Takuma Kobayashi, Seiya Nakazawa, Takafumi Okuda, Jun Suda, Tsunenobu Kimoto Takuma Kobayashi, Seiya Nakazawa, Takafumi Okuda, Jun Suda, Tsunenobu Kimoto Takuma Kobayashi, Seiya Nakazawa, Takafumi Okuda, Jun Suda, Tsunenobu Kimoto Interface state density of SiO2/p-type 4H-SiC (0001), (11(2)over-bar0), (1(1)over-bar00) metal-oxide-semiconductor structures characterized by low-temperature subthreshold slopes Interface state density of SiO2/p-type 4H-SiC (0001), (11(2)over-bar0), (1(1)over-bar00) metal-oxide-semiconductor structures characterized by low-temperature subthreshold slopes Interface state density of SiO2/p-type 4H-SiC (0001), (11(2)over-bar0), (1(1)over-bar00) metal-oxide-semiconductor structures characterized by low-temperature subthreshold slopes APPLIED PHYSICS LETTERS, 108, 15 APPLIED PHYSICS LETTERS, 108, 15 APPLIED PHYSICS LETTERS, 108, 15 2016/04 英語 研究論文(学術雑誌) 公開
Hajime Tanaka, Jun Suda, Tsunenobu Kimoto Hajime Tanaka, Jun Suda, Tsunenobu Kimoto Hajime Tanaka, Jun Suda, Tsunenobu Kimoto Modeling of surface roughness scattering in nanowires based on atomistic wave function: Application to hole mobility in rectangular germanium nanowires Modeling of surface roughness scattering in nanowires based on atomistic wave function: Application to hole mobility in rectangular germanium nanowires Modeling of surface roughness scattering in nanowires based on atomistic wave function: Application to hole mobility in rectangular germanium nanowires Physical Review B, 93, 15, 155303 Physical Review B, 93, 15, 155303 Physical Review B, 93, 15, 155303 2016/04 英語 研究論文(学術雑誌) 公開
Atsushi Tanaka, Hirofumi Matsuhata, Naoyuki Kawabata, Daisuke Mori, Kei Inoue, Mina Ryo, Takumi Fujimoto, Takeshi Tawara, Masaki Miyazato, Masaaki Miyajima, Kenji Fukuda, Akihiro Ohtsuki, Tomohisa Kato, Hidekazu Tsuchida, Yoshiyuki Yonezawa, Tsunenobu Kimoto Atsushi Tanaka, Hirofumi Matsuhata, Naoyuki Kawabata, Daisuke Mori, Kei Inoue, Mina Ryo, Takumi Fujimoto, Takeshi Tawara, Masaki Miyazato, Masaaki Miyajima, Kenji Fukuda, Akihiro Ohtsuki, Tomohisa Kato, Hidekazu Tsuchida, Yoshiyuki Yonezawa, Tsunenobu Kimoto Atsushi Tanaka, Hirofumi Matsuhata, Naoyuki Kawabata, Daisuke Mori, Kei Inoue, Mina Ryo, Takumi Fujimoto, Takeshi Tawara, Masaki Miyazato, Masaaki Miyajima, Kenji Fukuda, Akihiro Ohtsuki, Tomohisa Kato, Hidekazu Tsuchida, Yoshiyuki Yonezawa, Tsunenobu Kimoto Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes JOURNAL OF APPLIED PHYSICS, 119, 9 JOURNAL OF APPLIED PHYSICS, 119, 9 JOURNAL OF APPLIED PHYSICS, 119, 9 2016/03 英語 研究論文(学術雑誌) 公開
Mitsuaki Kaneko, Tsunenobu Kimoto, Jun Suda Mitsuaki Kaneko, Tsunenobu Kimoto, Jun Suda Mitsuaki Kaneko, Tsunenobu Kimoto, Jun Suda Strong impact of the initial III/V ratio on the crystalline quality of an AlN layer grown by rf-plasma-assisted molecular-beam epitaxy Strong impact of the initial III/V ratio on the crystalline quality of an AlN layer grown by rf-plasma-assisted molecular-beam epitaxy Strong impact of the initial III/V ratio on the crystalline quality of an AlN layer grown by rf-plasma-assisted molecular-beam epitaxy APPLIED PHYSICS EXPRESS, 9, 2 APPLIED PHYSICS EXPRESS, 9, 2 APPLIED PHYSICS EXPRESS, 9, 2 2016/02 英語 研究論文(学術雑誌) 公開
T. Kimoto, K. Kawahara, N. Kaji, H. Fujihara, J. Suda T. Kimoto, K. Kawahara, N. Kaji, H. Fujihara, J. Suda T. Kimoto, K. Kawahara, N. Kaji, H. Fujihara, J. Suda Ion Implantation Technology in SiC for High-Voltage/High-Temperature Devices Ion Implantation Technology in SiC for High-Voltage/High-Temperature Devices Ion Implantation Technology in SiC for High-Voltage/High-Temperature Devices 2016 16th International Workshop on Junction Technology (IWJT), 54-58 2016 16th International Workshop on Junction Technology (IWJT), 54-58 2016 16th International Workshop on Junction Technology (IWJT), 54-58 2016 英語 研究論文(国際会議プロシーディングス) 公開
Hajime Tanaka, Jun Suda, Tsunenobu Kimoto Hajime Tanaka, Jun Suda, Tsunenobu Kimoto Hajime Tanaka, Jun Suda, Tsunenobu Kimoto Theoretical Analysis of High-field Hole Transport in Germanium and Silicon Nanowires Theoretical Analysis of High-field Hole Transport in Germanium and Silicon Nanowires Theoretical Analysis of High-field Hole Transport in Germanium and Silicon Nanowires 2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW), 192-193 2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW), 192-193 2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW), 192-193 2016 英語 研究論文(国際会議プロシーディングス) 公開
Seigo Mori, Masatoshi Aketa, Takui Sakaguchi, Hirokazu Asahara, Takashi Nakamura, Tsunenobu Kimoto Seigo Mori, Masatoshi Aketa, Takui Sakaguchi, Hirokazu Asahara, Takashi Nakamura, Tsunenobu Kimoto Seigo Mori, Masatoshi Aketa, Takui Sakaguchi, Hirokazu Asahara, Takashi Nakamura, Tsunenobu Kimoto Demonstration of 3 kV 4H-SiC Reverse Blocking MOSFET Demonstration of 3 kV 4H-SiC Reverse Blocking MOSFET Demonstration of 3 kV 4H-SiC Reverse Blocking MOSFET 2016 28TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 271-274 2016 28TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 271-274 2016 28TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 271-274 2016 英語 研究論文(国際会議プロシーディングス) 公開
Takafumi Okuda, Takuma Kobayashi, Tsunenobu Kimoto, Jun Suda Takafumi Okuda, Takuma Kobayashi, Tsunenobu Kimoto, Jun Suda Takafumi Okuda, Takuma Kobayashi, Tsunenobu Kimoto, Jun Suda Impact of Annealing Temperature on Surface Passivation of SiC Epitaxial Layers with Deposited SiO2 Followed by POCl3 Annealing Impact of Annealing Temperature on Surface Passivation of SiC Epitaxial Layers with Deposited SiO2 Followed by POCl3 Annealing Impact of Annealing Temperature on Surface Passivation of SiC Epitaxial Layers with Deposited SiO2 Followed by POCl3 Annealing 2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 233-235 2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 233-235 2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 233-235 2016 英語 研究論文(国際会議プロシーディングス) 公開
Hiroki Sasakura, Yusuke Nishi, Tsunenobu Kimoto Hiroki Sasakura, Yusuke Nishi, Tsunenobu Kimoto Hiroki Sasakura, Yusuke Nishi, Tsunenobu Kimoto Temperature dependence of conductance in NiO-based resistive switching memory showing two modes in the forming process Temperature dependence of conductance in NiO-based resistive switching memory showing two modes in the forming process Temperature dependence of conductance in NiO-based resistive switching memory showing two modes in the forming process APPLIED PHYSICS LETTERS, 107, 23 APPLIED PHYSICS LETTERS, 107, 23 APPLIED PHYSICS LETTERS, 107, 23 2015/12 英語 研究論文(学術雑誌) 公開
Tetsuo Hatakeyama, Mitsuru Sometani, Kenji Fukuda, Hajime Okumura, Tsunenobu Kimoto Tetsuo Hatakeyama, Mitsuru Sometani, Kenji Fukuda, Hajime Okumura, Tsunenobu Kimoto Tetsuo Hatakeyama, Mitsuru Sometani, Kenji Fukuda, Hajime Okumura, Tsunenobu Kimoto Characterization of traps in SiC/SiO2 interfaces close to the conduction band by deep-level transient spectroscopy Characterization of traps in SiC/SiO2 interfaces close to the conduction band by deep-level transient spectroscopy Characterization of traps in SiC/SiO2 interfaces close to the conduction band by deep-level transient spectroscopy JAPANESE JOURNAL OF APPLIED PHYSICS, 54, 11 JAPANESE JOURNAL OF APPLIED PHYSICS, 54, 11 JAPANESE JOURNAL OF APPLIED PHYSICS, 54, 11 2015/11 英語 研究論文(学術雑誌) 公開
Takafumi Okuda, Giovanni Alfieri, Tsunenobu Kimoto, Jun Suda Takafumi Okuda, Giovanni Alfieri, Tsunenobu Kimoto, Jun Suda Takafumi Okuda, Giovanni Alfieri, Tsunenobu Kimoto, Jun Suda Oxidation-induced majority and minority carrier traps in n- and p-type 4H-SiC Oxidation-induced majority and minority carrier traps in n- and p-type 4H-SiC Oxidation-induced majority and minority carrier traps in n- and p-type 4H-SiC APPLIED PHYSICS EXPRESS, 8, 11 APPLIED PHYSICS EXPRESS, 8, 11 APPLIED PHYSICS EXPRESS, 8, 11 2015/11 英語 研究論文(学術雑誌) 公開
Hiroki Niwa, Jun Suda, Tsunenobu Kimoto Hiroki Niwa, Jun Suda, Tsunenobu Kimoto Hiroki Niwa, Jun Suda, Tsunenobu Kimoto Impact Ionization Coefficients in 4H-SiC Toward Ultrahigh-Voltage Power Devices Impact Ionization Coefficients in 4H-SiC Toward Ultrahigh-Voltage Power Devices Impact Ionization Coefficients in 4H-SiC Toward Ultrahigh-Voltage Power Devices IEEE TRANSACTIONS ON ELECTRON DEVICES, 62, 10, 3326-3333 IEEE TRANSACTIONS ON ELECTRON DEVICES, 62, 10, 3326-3333 IEEE TRANSACTIONS ON ELECTRON DEVICES, 62, 10, 3326-3333 2015/10 英語 研究論文(学術雑誌) 公開
Naoki Kaji, Jun Suda, Tsunenobu Kimoto Naoki Kaji, Jun Suda, Tsunenobu Kimoto Naoki Kaji, Jun Suda, Tsunenobu Kimoto Temperature dependence of forward characteristics for ultrahigh-voltage SiC p-i-n diodes with a long carrier lifetime Temperature dependence of forward characteristics for ultrahigh-voltage SiC p-i-n diodes with a long carrier lifetime Temperature dependence of forward characteristics for ultrahigh-voltage SiC p-i-n diodes with a long carrier lifetime JAPANESE JOURNAL OF APPLIED PHYSICS, 54, 9 JAPANESE JOURNAL OF APPLIED PHYSICS, 54, 9 JAPANESE JOURNAL OF APPLIED PHYSICS, 54, 9 2015/09 英語 研究論文(学術雑誌) 公開
Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto Dominant conduction mechanism in NiO-based resistive memories Dominant conduction mechanism in NiO-based resistive memories Dominant conduction mechanism in NiO-based resistive memories JOURNAL OF APPLIED PHYSICS, 117, 22 JOURNAL OF APPLIED PHYSICS, 117, 22 JOURNAL OF APPLIED PHYSICS, 117, 22 2015/06 英語 研究論文(学術雑誌) 公開
Satoshi Asada, Takafumi Okuda, Tsunenobu Kimoto, Jun Suda Satoshi Asada, Takafumi Okuda, Tsunenobu Kimoto, Jun Suda Satoshi Asada, Takafumi Okuda, Tsunenobu Kimoto, Jun Suda Temperature dependence of current gain in 4H-SiC bipolar junction transistors Temperature dependence of current gain in 4H-SiC bipolar junction transistors Temperature dependence of current gain in 4H-SiC bipolar junction transistors JAPANESE JOURNAL OF APPLIED PHYSICS, 54, 4 JAPANESE JOURNAL OF APPLIED PHYSICS, 54, 4 JAPANESE JOURNAL OF APPLIED PHYSICS, 54, 4 2015/04 英語 研究論文(学術雑誌) 公開
Kenji Fukuda, Dai Okamoto, Mitsuo Okamoto, Tadayoshi Deguchi, Tomonori Mizushima, Kensuke Takenaka, Hiroyuki Fujisawa, Shinsuke Harada, Yasunori Tanaka, Yoshiyuki Yonezawa, Tomohisa Kato, Shuji Katakami, Manabu Arai, Manabu Takei, Shinichiro Matsunaga, Kazuto Takao, Takashi Shinohe, Toru Izumi, Toshihiko Hayashi, Syuuji Ogata, Katsunori Asano, Hajime Okumura, Tsunenobu Kimoto Kenji Fukuda, Dai Okamoto, Mitsuo Okamoto, Tadayoshi Deguchi, Tomonori Mizushima, Kensuke Takenaka, Hiroyuki Fujisawa, Shinsuke Harada, Yasunori Tanaka, Yoshiyuki Yonezawa, Tomohisa Kato, Shuji Katakami, Manabu Arai, Manabu Takei, Shinichiro Matsunaga, Kazuto Takao, Takashi Shinohe, Toru Izumi, Toshihiko Hayashi, Syuuji Ogata, Katsunori Asano, Hajime Okumura, Tsunenobu Kimoto Kenji Fukuda, Dai Okamoto, Mitsuo Okamoto, Tadayoshi Deguchi, Tomonori Mizushima, Kensuke Takenaka, Hiroyuki Fujisawa, Shinsuke Harada, Yasunori Tanaka, Yoshiyuki Yonezawa, Tomohisa Kato, Shuji Katakami, Manabu Arai, Manabu Takei, Shinichiro Matsunaga, Kazuto Takao, Takashi Shinohe, Toru Izumi, Toshihiko Hayashi, Syuuji Ogata, Katsunori Asano, Hajime Okumura, Tsunenobu Kimoto Development of Ultrahigh-Voltage SiC Devices Development of Ultrahigh-Voltage SiC Devices Development of Ultrahigh-Voltage SiC Devices IEEE TRANSACTIONS ON ELECTRON DEVICES, 62, 2, 396-404 IEEE TRANSACTIONS ON ELECTRON DEVICES, 62, 2, 396-404 IEEE TRANSACTIONS ON ELECTRON DEVICES, 62, 2, 396-404 2015/02 英語 研究論文(学術雑誌) 公開
Seiya Nakazawa, Takafumi Okuda, Jun Suda, Takashi Nakamura, Tsunenobu Kimoto Seiya Nakazawa, Takafumi Okuda, Jun Suda, Takashi Nakamura, Tsunenobu Kimoto Seiya Nakazawa, Takafumi Okuda, Jun Suda, Takashi Nakamura, Tsunenobu Kimoto Interface Properties of 4H-SiC (11(2)over-bar0) and (1(1)over-bar00) MOS Structures Annealed in NO Interface Properties of 4H-SiC (11(2)over-bar0) and (1(1)over-bar00) MOS Structures Annealed in NO Interface Properties of 4H-SiC (11(2)over-bar0) and (1(1)over-bar00) MOS Structures Annealed in NO IEEE TRANSACTIONS ON ELECTRON DEVICES, 62, 2, 309-315 IEEE TRANSACTIONS ON ELECTRON DEVICES, 62, 2, 309-315 IEEE TRANSACTIONS ON ELECTRON DEVICES, 62, 2, 309-315 2015/02 英語 研究論文(学術雑誌) 公開
Hiroaki Fujihara, Naoya Morioka, Hajime Tanaka, Jun Suda, Tsunenobu Kimoto Hiroaki Fujihara, Naoya Morioka, Hajime Tanaka, Jun Suda, Tsunenobu Kimoto Hiroaki Fujihara, Naoya Morioka, Hajime Tanaka, Jun Suda, Tsunenobu Kimoto Impacts of Orientation and Cross-sectional Shape on Hole Mobility of Si Nanowire MOSFETs Impacts of Orientation and Cross-sectional Shape on Hole Mobility of Si Nanowire MOSFETs Impacts of Orientation and Cross-sectional Shape on Hole Mobility of Si Nanowire MOSFETs 2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) 2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) 2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) 2015 英語 研究論文(国際会議プロシーディングス) 公開
Hajime Tanaka, Jun Suda, Tsunenobu Kimoto Hajime Tanaka, Jun Suda, Tsunenobu Kimoto Hajime Tanaka, Jun Suda, Tsunenobu Kimoto Impacts of Surface Roughness Scattering on Hole Mobility in Germanium Nanowires Impacts of Surface Roughness Scattering on Hole Mobility in Germanium Nanowires Impacts of Surface Roughness Scattering on Hole Mobility in Germanium Nanowires 2015 SILICON NANOELECTRONICS WORKSHOP (SNW) 2015 SILICON NANOELECTRONICS WORKSHOP (SNW) 2015 SILICON NANOELECTRONICS WORKSHOP (SNW) 2015 英語 研究論文(国際会議プロシーディングス) 公開
Toshihiko Hayashi, Takafumi Okuda, Jun Suda, Tsunenobu Kimoto Toshihiko Hayashi, Takafumi Okuda, Jun Suda, Tsunenobu Kimoto Toshihiko Hayashi, Takafumi Okuda, Jun Suda, Tsunenobu Kimoto Decay curve analyses in carrier lifetime measurements of p- and n-type 4H-SiC epilayers Decay curve analyses in carrier lifetime measurements of p- and n-type 4H-SiC epilayers Decay curve analyses in carrier lifetime measurements of p- and n-type 4H-SiC epilayers JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 11 JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 11 JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 11 2014/11 英語 研究論文(学術雑誌) 公開
Masanobu Yoshikawa, Hirohumi Seki, Keiko Inoue, Yuichiro Nanen, Tsunenobu Kimoto Masanobu Yoshikawa, Hirohumi Seki, Keiko Inoue, Yuichiro Nanen, Tsunenobu Kimoto Masanobu Yoshikawa, Hirohumi Seki, Keiko Inoue, Yuichiro Nanen, Tsunenobu Kimoto Characterization of Inhomogeneity in Silicon Dioxide Films on 4H-Silicon Carbide Epitaxial Substrate Using a Combination of Fourier Transform Infrared and Cathodoluminescence Spectroscopy Characterization of Inhomogeneity in Silicon Dioxide Films on 4H-Silicon Carbide Epitaxial Substrate Using a Combination of Fourier Transform Infrared and Cathodoluminescence Spectroscopy Characterization of Inhomogeneity in Silicon Dioxide Films on 4H-Silicon Carbide Epitaxial Substrate Using a Combination of Fourier Transform Infrared and Cathodoluminescence Spectroscopy APPLIED SPECTROSCOPY, 68, 10, 1176-1180 APPLIED SPECTROSCOPY, 68, 10, 1176-1180 APPLIED SPECTROSCOPY, 68, 10, 1176-1180 2014/10 英語 研究論文(学術雑誌) 公開
Takafumi Okuda, Tetsuya Miyazawa, Hidekazu Tsuchida, Tsunenobu Kimoto, Jun Suda Takafumi Okuda, Tetsuya Miyazawa, Hidekazu Tsuchida, Tsunenobu Kimoto, Jun Suda Takafumi Okuda, Tetsuya Miyazawa, Hidekazu Tsuchida, Tsunenobu Kimoto, Jun Suda Enhancement of carrier lifetime in lightly Al-doped p-type 4H-SiC epitaxial layers by combination of thermal oxidation and hydrogen annealing Enhancement of carrier lifetime in lightly Al-doped p-type 4H-SiC epitaxial layers by combination of thermal oxidation and hydrogen annealing Enhancement of carrier lifetime in lightly Al-doped p-type 4H-SiC epitaxial layers by combination of thermal oxidation and hydrogen annealing APPLIED PHYSICS EXPRESS, 7, 8 APPLIED PHYSICS EXPRESS, 7, 8 APPLIED PHYSICS EXPRESS, 7, 8 2014/08 英語 研究論文(学術雑誌) 公開
Hironori Okumura, Tsunenobu Kimoto, Jun Suda Hironori Okumura, Tsunenobu Kimoto, Jun Suda Hironori Okumura, Tsunenobu Kimoto, Jun Suda Formation mechanism of threading-dislocation array in AlN layers grown on 6H-SiC (0001) substrates with 3-bilayer-high surface steps Formation mechanism of threading-dislocation array in AlN layers grown on 6H-SiC (0001) substrates with 3-bilayer-high surface steps Formation mechanism of threading-dislocation array in AlN layers grown on 6H-SiC (0001) substrates with 3-bilayer-high surface steps APPLIED PHYSICS LETTERS, 105, 7, 071603 APPLIED PHYSICS LETTERS, 105, 7, 071603 APPLIED PHYSICS LETTERS, 105, 7, 071603 2014/08 英語 研究論文(学術雑誌) 公開
Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto Phonon-Limited Electron Mobility in Rectangular Cross-Sectional Ge Nanowires Phonon-Limited Electron Mobility in Rectangular Cross-Sectional Ge Nanowires Phonon-Limited Electron Mobility in Rectangular Cross-Sectional Ge Nanowires IEEE Transactions on Electron Devices, 61, 6, 1993-1998 IEEE Transactions on Electron Devices, 61, 6, 1993-1998 IEEE Transactions on Electron Devices, 61, 6, 1993-1998 2014/06 英語 研究論文(学術雑誌) 公開
Masahiro Horita, Masato Noborio, Tsunenobu Kimoto, Jun Suda Masahiro Horita, Masato Noborio, Tsunenobu Kimoto, Jun Suda Masahiro Horita, Masato Noborio, Tsunenobu Kimoto, Jun Suda 4H-SiC MISFETs With 4H-AlN Gate Insulator Isopolytypically Grown on 4H-SiC (11(2)over-bar0) 4H-SiC MISFETs With 4H-AlN Gate Insulator Isopolytypically Grown on 4H-SiC (11(2)over-bar0) 4H-SiC MISFETs With 4H-AlN Gate Insulator Isopolytypically Grown on 4H-SiC (11(2)over-bar0) IEEE ELECTRON DEVICE LETTERS, 35, 3, 339-341 IEEE ELECTRON DEVICE LETTERS, 35, 3, 339-341 IEEE ELECTRON DEVICE LETTERS, 35, 3, 339-341 2014/03 英語 研究論文(学術雑誌) 公開
G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto Detection of minority carrier traps in p-type 4H-SiC Detection of minority carrier traps in p-type 4H-SiC Detection of minority carrier traps in p-type 4H-SiC APPLIED PHYSICS LETTERS, 104, 9 APPLIED PHYSICS LETTERS, 104, 9 APPLIED PHYSICS LETTERS, 104, 9 2014/03 英語 研究論文(学術雑誌) 公開
Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Effect of ultrathin AIN spacer on electronic properties of GaN/SiC heterojunction bipolar transistors Effect of ultrathin AIN spacer on electronic properties of GaN/SiC heterojunction bipolar transistors Effect of ultrathin AIN spacer on electronic properties of GaN/SiC heterojunction bipolar transistors JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 3 JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 3 JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 3 2014/03 英語 研究論文(学術雑誌) 公開
Chihiro Kawahara, Jun Suda, Tsunenobu Kimoto Chihiro Kawahara, Jun Suda, Tsunenobu Kimoto Chihiro Kawahara, Jun Suda, Tsunenobu Kimoto Identification of dislocations in 4H-SiC epitaxial layers and substrates using photoluminescence imaging Identification of dislocations in 4H-SiC epitaxial layers and substrates using photoluminescence imaging Identification of dislocations in 4H-SiC epitaxial layers and substrates using photoluminescence imaging JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 2 JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 2 JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 2 2014/02 英語 研究論文(学術雑誌) 公開
G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto Ab initio prediction of SiC nanotubes with negative strain energy Ab initio prediction of SiC nanotubes with negative strain energy Ab initio prediction of SiC nanotubes with negative strain energy APPLIED PHYSICS LETTERS, 104, 3 APPLIED PHYSICS LETTERS, 104, 3 APPLIED PHYSICS LETTERS, 104, 3 2014/01 英語 研究論文(学術雑誌) 公開
Naoya Morioka, Jun Suda, Tsunenobu Kimoto Naoya Morioka, Jun Suda, Tsunenobu Kimoto Naoya Morioka, Jun Suda, Tsunenobu Kimoto Etching-limiting process and origin of loading effects in silicon etching with hydrogen chloride gas Etching-limiting process and origin of loading effects in silicon etching with hydrogen chloride gas Etching-limiting process and origin of loading effects in silicon etching with hydrogen chloride gas JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 1 JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 1 JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 1 2014/01 英語 研究論文(学術雑誌) 公開
Hironori Yoshioka, Takashi Nakamura, Tsunenobu Kimoto Hironori Yoshioka, Takashi Nakamura, Tsunenobu Kimoto Hironori Yoshioka, Takashi Nakamura, Tsunenobu Kimoto Characterization of very fast states in the vicinity of the conduction band edge at the SiO2/SiC interface by low temperature conductance measurements Characterization of very fast states in the vicinity of the conduction band edge at the SiO2/SiC interface by low temperature conductance measurements Characterization of very fast states in the vicinity of the conduction band edge at the SiO2/SiC interface by low temperature conductance measurements JOURNAL OF APPLIED PHYSICS, 115, 1 JOURNAL OF APPLIED PHYSICS, 115, 1 JOURNAL OF APPLIED PHYSICS, 115, 1 2014/01 英語 研究論文(学術雑誌) 公開
Yuichiro Nanen, Jun Suda, Tsunenobu Kimoto Yuichiro Nanen, Jun Suda, Tsunenobu Kimoto Yuichiro Nanen, Jun Suda, Tsunenobu Kimoto Designing of Quasi-Modulated Region in 4H-SiC Lateral RESURF MOSFETs Designing of Quasi-Modulated Region in 4H-SiC Lateral RESURF MOSFETs Designing of Quasi-Modulated Region in 4H-SiC Lateral RESURF MOSFETs SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 778-780, 943-946 SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 778-780, 943-946 SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 778-780, 943-946 2014 英語 研究論文(国際会議プロシーディングス) 公開
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Hironori Yoshioka, Takashi Nakamura, Junji Senzaki, Atsushi Shimozato, Yasunori Tanaka, Hajime Okumura, Tsunenobu Kimoto Hironori Yoshioka, Takashi Nakamura, Junji Senzaki, Atsushi Shimozato, Yasunori Tanaka, Hajime Okumura, Tsunenobu Kimoto Hironori Yoshioka, Takashi Nakamura, Junji Senzaki, Atsushi Shimozato, Yasunori Tanaka, Hajime Okumura, Tsunenobu Kimoto Accurate characterization of interface state density of SiC MOS structures and the impacts on channel mobility Accurate characterization of interface state density of SiC MOS structures and the impacts on channel mobility Accurate characterization of interface state density of SiC MOS structures and the impacts on channel mobility SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 778-780, 418-+ SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 778-780, 418-+ SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 778-780, 418-+ 2014 英語 研究論文(国際会議プロシーディングス) 公開
Tsunenobu Kimoto Tsunenobu Kimoto Tsunenobu Kimoto Progress and Future Challenges of Silicon Carbide Devices for Integrated Circuits Progress and Future Challenges of Silicon Carbide Devices for Integrated Circuits Progress and Future Challenges of Silicon Carbide Devices for Integrated Circuits 2014 IEEE PROCEEDINGS OF THE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC) 2014 IEEE PROCEEDINGS OF THE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC) 2014 IEEE PROCEEDINGS OF THE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC) 2014 英語 研究論文(国際会議プロシーディングス) 公開
Giovanni Alfieri, Tsunenobu Kimoto Giovanni Alfieri, Tsunenobu Kimoto Giovanni Alfieri, Tsunenobu Kimoto Minority Carrier Transient Spectroscopy of As-grown, Electron Irradiated and Thermally Oxidized p-type 4H-SiC Minority Carrier Transient Spectroscopy of As-grown, Electron Irradiated and Thermally Oxidized p-type 4H-SiC Minority Carrier Transient Spectroscopy of As-grown, Electron Irradiated and Thermally Oxidized p-type 4H-SiC SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 778-780, 269-272 SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 778-780, 269-272 SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 778-780, 269-272 2014 英語 研究論文(国際会議プロシーディングス) 公開
Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto Orientation and Size Effects on Phonon-limited Hole Mobility in Rectangular Cross-sectional Germanium Nanowires Orientation and Size Effects on Phonon-limited Hole Mobility in Rectangular Cross-sectional Germanium Nanowires Orientation and Size Effects on Phonon-limited Hole Mobility in Rectangular Cross-sectional Germanium Nanowires 2014 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) 2014 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) 2014 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) 2014 英語 研究論文(国際会議プロシーディングス) 公開
Naoki Kaji, Hiroki Niwa, Jun Suda, Tsunenobu Kimoto Naoki Kaji, Hiroki Niwa, Jun Suda, Tsunenobu Kimoto Naoki Kaji, Hiroki Niwa, Jun Suda, Tsunenobu Kimoto Ultrahigh-Voltage (&gt; 20 kV) SiC PiN Diodes with a Space-Modulated JTE and Lifetime Enhancement Process via Thermal Oxidation Ultrahigh-Voltage (&gt; 20 kV) SiC PiN Diodes with a Space-Modulated JTE and Lifetime Enhancement Process via Thermal Oxidation Ultrahigh-Voltage (&gt; 20 kV) SiC PiN Diodes with a Space-Modulated JTE and Lifetime Enhancement Process via Thermal Oxidation SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 778-780, 832-835 SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 778-780, 832-835 SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 778-780, 832-835 2014 英語 研究論文(国際会議プロシーディングス) 公開
X. T. Trinh, K. Szasz, T. Hornos, K. Kawahara, J. Suda, T. Kimoto, A. Gali, E. Janzen, N. T. Son X. T. Trinh, K. Szasz, T. Hornos, K. Kawahara, J. Suda, T. Kimoto, A. Gali, E. Janzen, N. T. Son X. T. Trinh, K. Szasz, T. Hornos, K. Kawahara, J. Suda, T. Kimoto, A. Gali, E. Janzen, N. T. Son Identification of the negative carbon vacancy at quasi-cubic site in 4H-SiC by EPR and theoretical calculations Identification of the negative carbon vacancy at quasi-cubic site in 4H-SiC by EPR and theoretical calculations Identification of the negative carbon vacancy at quasi-cubic site in 4H-SiC by EPR and theoretical calculations SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 778-780, 285-+ SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 778-780, 285-+ SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 778-780, 285-+ 2014 英語 研究論文(国際会議プロシーディングス) 公開
Tanaka H, Mori S, Morioka N, Suda J, Kimoto T Tanaka H, Mori S, Morioka N, Suda J, Kimoto T Tanaka H, Mori S, Morioka N, Suda J, Kimoto T Geometrical and band-structure effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires Geometrical and band-structure effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires Geometrical and band-structure effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires Journal of Applied Physics, 116, 23, 235701 Journal of Applied Physics, 116, 23, 235701 Journal of Applied Physics, 116, 23, 235701 2014 英語 研究論文(学術雑誌) 公開
Tanaka H, Morioka N, Mori S, Suda J, Kimoto T Tanaka H, Morioka N, Mori S, Suda J, Kimoto T Tanaka H, Morioka N, Mori S, Suda J, Kimoto T Quantum-confinement effects on conduction band structure of rectangular cross-sectional GaAs nanowires Quantum-confinement effects on conduction band structure of rectangular cross-sectional GaAs nanowires Quantum-confinement effects on conduction band structure of rectangular cross-sectional GaAs nanowires Journal of Applied Physics, 115, 5, 053713 Journal of Applied Physics, 115, 5, 053713 Journal of Applied Physics, 115, 5, 053713 2014 英語 研究論文(学術雑誌) 公開
W. M. Klahold, R. P. Devaty, W. J. Choyke, K. Kawahara, T. Kimoto, T. Ohshima W. M. Klahold, R. P. Devaty, W. J. Choyke, K. Kawahara, T. Kimoto, T. Ohshima W. M. Klahold, R. P. Devaty, W. J. Choyke, K. Kawahara, T. Kimoto, T. Ohshima Annealing of Electron Irradiated, Thick, Ultrapure 4H SiC between 1100 degrees C and 1500 degrees C and Measurements of Lifetime and Photoluminescence Annealing of Electron Irradiated, Thick, Ultrapure 4H SiC between 1100 degrees C and 1500 degrees C and Measurements of Lifetime and Photoluminescence Annealing of Electron Irradiated, Thick, Ultrapure 4H SiC between 1100 degrees C and 1500 degrees C and Measurements of Lifetime and Photoluminescence SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 778-780, 273-+ SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 778-780, 273-+ SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 778-780, 273-+ 2014 英語 研究論文(国際会議プロシーディングス) 公開
Tomonori Mizushima, Kensuke Takenaka, Hiroyuki Fujisawa, Tomohisa Kato, Shinsuke Harada, Yasunori Tanaka, Mitsuo Okamoto, Mitsuru Sometani, Dai Okamoto, Naoki Kumagai, Shinichiro Matsunaga, Tadayoshi Deguchi, Manabu Arai, Tetsuo Hatakeyama, Youichi Makifuchi, Tsuyoshi Araoka, Naoyuki Oose, Takashi Tsutsumi, Mitsuru Yoshikawa, Katsumi Tatera, Atsushi Tanaka, Syuji Ogata, Koji Nakayama, Toshihiko Hayashi, Katsunori Asano, Masayuki Harashima, Yukio Sano, Eisuke Morisaki, Manabu Takei, Masaaki Miyajima, Hiroshi Kimura, Akihiro Otsuki, Yoshiyuki Yonezawa, Kenji Fukuda, Hajime Okumura, Tsunenobu Kimoto Tomonori Mizushima, Kensuke Takenaka, Hiroyuki Fujisawa, Tomohisa Kato, Shinsuke Harada, Yasunori Tanaka, Mitsuo Okamoto, Mitsuru Sometani, Dai Okamoto, Naoki Kumagai, Shinichiro Matsunaga, Tadayoshi Deguchi, Manabu Arai, Tetsuo Hatakeyama, Youichi Makifuchi, Tsuyoshi Araoka, Naoyuki Oose, Takashi Tsutsumi, Mitsuru Yoshikawa, Katsumi Tatera, Atsushi Tanaka, Syuji Ogata, Koji Nakayama, Toshihiko Hayashi, Katsunori Asano, Masayuki Harashima, Yukio Sano, Eisuke Morisaki, Manabu Takei, Masaaki Miyajima, Hiroshi Kimura, Akihiro Otsuki, Yoshiyuki Yonezawa, Kenji Fukuda, Hajime Okumura, Tsunenobu Kimoto Tomonori Mizushima, Kensuke Takenaka, Hiroyuki Fujisawa, Tomohisa Kato, Shinsuke Harada, Yasunori Tanaka, Mitsuo Okamoto, Mitsuru Sometani, Dai Okamoto, Naoki Kumagai, Shinichiro Matsunaga, Tadayoshi Deguchi, Manabu Arai, Tetsuo Hatakeyama, Youichi Makifuchi, Tsuyoshi Araoka, Naoyuki Oose, Takashi Tsutsumi, Mitsuru Yoshikawa, Katsumi Tatera, Atsushi Tanaka, Syuji Ogata, Koji Nakayama, Toshihiko Hayashi, Katsunori Asano, Masayuki Harashima, Yukio Sano, Eisuke Morisaki, Manabu Takei, Masaaki Miyajima, Hiroshi Kimura, Akihiro Otsuki, Yoshiyuki Yonezawa, Kenji Fukuda, Hajime Okumura, Tsunenobu Kimoto Dynamic Characteristics of Large Current Capacity Module using 16-kV Ultrahigh Voltage SiC Flip-Type n-channel IE-IGBT Dynamic Characteristics of Large Current Capacity Module using 16-kV Ultrahigh Voltage SiC Flip-Type n-channel IE-IGBT Dynamic Characteristics of Large Current Capacity Module using 16-kV Ultrahigh Voltage SiC Flip-Type n-channel IE-IGBT 2014 IEEE 26TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD), 277-280 2014 IEEE 26TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD), 277-280 2014 IEEE 26TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD), 277-280 2014 英語 研究論文(国際会議プロシーディングス) 公開
T. Hatakeyama, M. Sometani, K. Fukuda, H. Okumura, T. Kimoto T. Hatakeyama, M. Sometani, K. Fukuda, H. Okumura, T. Kimoto T. Hatakeyama, M. Sometani, K. Fukuda, H. Okumura, T. Kimoto Deep-Level Transient Spectroscopy Characterization of Interface States in SiO2/4H-SiC Structures Close to the Conduction Band Edge Deep-Level Transient Spectroscopy Characterization of Interface States in SiO2/4H-SiC Structures Close to the Conduction Band Edge Deep-Level Transient Spectroscopy Characterization of Interface States in SiO2/4H-SiC Structures Close to the Conduction Band Edge SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 778-780, 424-+ SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 778-780, 424-+ SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 778-780, 424-+ 2014 英語 研究論文(国際会議プロシーディングス) 公開
X. T. Trinh, K. Szász, T. Hornos, K. Kawahara, J. Suda, T. Kimoto, A. Gali, E. Janzén, N. T. Son X. T. Trinh, K. Szász, T. Hornos, K. Kawahara, J. Suda, T. Kimoto, A. Gali, E. Janzén, N. T. Son X. T. Trinh, K. Szász, T. Hornos, K. Kawahara, J. Suda, T. Kimoto, A. Gali, E. Janzén, N. T. Son Negative- U carbon vacancy in 4 H -SiC: Assessment of charge correction schemes and identification of the negative carbon vacancy at the quasicubic site Negative- U carbon vacancy in 4 H -SiC: Assessment of charge correction schemes and identification of the negative carbon vacancy at the quasicubic site Negative- U carbon vacancy in 4 H -SiC: Assessment of charge correction schemes and identification of the negative carbon vacancy at the quasicubic site Physical Review B - Condensed Matter and Materials Physics, 88, 23 Physical Review B - Condensed Matter and Materials Physics, 88, 23 Physical Review B - Condensed Matter and Materials Physics, 88, 23 2013/12/26 英語 研究論文(学術雑誌) 公開
Hiroki Miyake, Koichi Amari, Tsunenobu Kimoto, Jun Suda Hiroki Miyake, Koichi Amari, Tsunenobu Kimoto, Jun Suda Hiroki Miyake, Koichi Amari, Tsunenobu Kimoto, Jun Suda Growth, Electrical Characterization, and Electroluminescence of GaN/SiC Heterojunction Diodes and Bipolar Transistors Fabricated on SiC Off-Axis Substrates Growth, Electrical Characterization, and Electroluminescence of GaN/SiC Heterojunction Diodes and Bipolar Transistors Fabricated on SiC Off-Axis Substrates Growth, Electrical Characterization, and Electroluminescence of GaN/SiC Heterojunction Diodes and Bipolar Transistors Fabricated on SiC Off-Axis Substrates JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 12 JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 12 JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 12 2013/12 英語 研究論文(学術雑誌) 公開
Takafumi Okuda, Tsunenobu Kimoto, Jun Suda Takafumi Okuda, Tsunenobu Kimoto, Jun Suda Takafumi Okuda, Tsunenobu Kimoto, Jun Suda Improvement of carrier lifetimes in highly Al-doped p-type 4H-SiC epitaxial layers by hydrogen passivation Improvement of carrier lifetimes in highly Al-doped p-type 4H-SiC epitaxial layers by hydrogen passivation Improvement of carrier lifetimes in highly Al-doped p-type 4H-SiC epitaxial layers by hydrogen passivation Applied Physics Express, 6, 12 Applied Physics Express, 6, 12 Applied Physics Express, 6, 12 2013/12 英語 研究論文(学術雑誌) 公開
Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Hiroki Miyake, Tsunenobu Kimoto, Jun Suda AlGaN/SiC Heterojunction Bipolar Transistors Featuring AlN/GaN Short-Period Superlattice Emitter AlGaN/SiC Heterojunction Bipolar Transistors Featuring AlN/GaN Short-Period Superlattice Emitter AlGaN/SiC Heterojunction Bipolar Transistors Featuring AlN/GaN Short-Period Superlattice Emitter IEEE TRANSACTIONS ON ELECTRON DEVICES, 60, 9, 2768-2775 IEEE TRANSACTIONS ON ELECTRON DEVICES, 60, 9, 2768-2775 IEEE TRANSACTIONS ON ELECTRON DEVICES, 60, 9, 2768-2775 2013/09 英語 研究論文(学術雑誌) 公開
Kohei Adachi, Naoki Watanabe, Hajime Okamoto, Hiroshi Yamaguchi, Tsunenobu Kimoto, Jun Suda Kohei Adachi, Naoki Watanabe, Hajime Okamoto, Hiroshi Yamaguchi, Tsunenobu Kimoto, Jun Suda Kohei Adachi, Naoki Watanabe, Hajime Okamoto, Hiroshi Yamaguchi, Tsunenobu Kimoto, Jun Suda Single-crystalline 4H-SiC micro cantilevers with a high quality factor Single-crystalline 4H-SiC micro cantilevers with a high quality factor Single-crystalline 4H-SiC micro cantilevers with a high quality factor SENSORS AND ACTUATORS A-PHYSICAL, 197, 122-125 SENSORS AND ACTUATORS A-PHYSICAL, 197, 122-125 SENSORS AND ACTUATORS A-PHYSICAL, 197, 122-125 2013/08 英語 研究論文(学術雑誌) 公開
Mitsuaki Kaneko, Ryosuke Kikuchi, Hironori Okumura, Tsunenobu Kimoto, Jun Suda Mitsuaki Kaneko, Ryosuke Kikuchi, Hironori Okumura, Tsunenobu Kimoto, Jun Suda Mitsuaki Kaneko, Ryosuke Kikuchi, Hironori Okumura, Tsunenobu Kimoto, Jun Suda Coherent Growth of AlN/GaN Short-Period Superlattice with Average GaN Mole Fraction of up to 20% on 6H-SiC(0001) Substrates by Plasma-Assisted Molecular-Beam Epitaxy Coherent Growth of AlN/GaN Short-Period Superlattice with Average GaN Mole Fraction of up to 20% on 6H-SiC(0001) Substrates by Plasma-Assisted Molecular-Beam Epitaxy Coherent Growth of AlN/GaN Short-Period Superlattice with Average GaN Mole Fraction of up to 20% on 6H-SiC(0001) Substrates by Plasma-Assisted Molecular-Beam Epitaxy JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 8 JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 8 JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 8 2013/08 英語 研究論文(学術雑誌) 公開
Naoki Kaji, Hiroki Niwa, Jun Suda, Tsunenobu Kimoto Naoki Kaji, Hiroki Niwa, Jun Suda, Tsunenobu Kimoto Naoki Kaji, Hiroki Niwa, Jun Suda, Tsunenobu Kimoto Ultrahigh-Voltage SiC PiN Diodes with an Improved Junction Termination Extension Structure and Enhanced Carrier Lifetime Ultrahigh-Voltage SiC PiN Diodes with an Improved Junction Termination Extension Structure and Enhanced Carrier Lifetime Ultrahigh-Voltage SiC PiN Diodes with an Improved Junction Termination Extension Structure and Enhanced Carrier Lifetime JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 7 JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 7 JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 7 2013/07 英語 研究論文(学術雑誌) 公開
Mitsuaki Kaneko, Hironori Okumura, Ryota Ishii, Mitsuru Funato, Yoichi Kawakami, Tsunenobu Kimoto, Jun Suda Mitsuaki Kaneko, Hironori Okumura, Ryota Ishii, Mitsuru Funato, Yoichi Kawakami, Tsunenobu Kimoto, Jun Suda Mitsuaki Kaneko, Hironori Okumura, Ryota Ishii, Mitsuru Funato, Yoichi Kawakami, Tsunenobu Kimoto, Jun Suda Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001) Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001) Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001) APPLIED PHYSICS EXPRESS, 6, 6 APPLIED PHYSICS EXPRESS, 6, 6 APPLIED PHYSICS EXPRESS, 6, 6 2013/06 英語 研究論文(学術雑誌) 公開
Masahiko Aoki, Hitoshi Kawanowa, Gan Feng, Tsunenobu Kimoto Masahiko Aoki, Hitoshi Kawanowa, Gan Feng, Tsunenobu Kimoto Masahiko Aoki, Hitoshi Kawanowa, Gan Feng, Tsunenobu Kimoto Characterization of Bar-Shaped Stacking Faults in 4H-SiC Epitaxial Layers by High-Resolution Transmission Electron Microscopy Characterization of Bar-Shaped Stacking Faults in 4H-SiC Epitaxial Layers by High-Resolution Transmission Electron Microscopy Characterization of Bar-Shaped Stacking Faults in 4H-SiC Epitaxial Layers by High-Resolution Transmission Electron Microscopy JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 6 JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 6 JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 6 2013/06 英語 研究論文(学術雑誌) 公開
Daisuke Hirano, Tsunenobu Kimoto, Yoshihiko Kanemitsu Daisuke Hirano, Tsunenobu Kimoto, Yoshihiko Kanemitsu Daisuke Hirano, Tsunenobu Kimoto, Yoshihiko Kanemitsu Determination of Phase Diagram of Electron-Hole Systems in 4H-SiC Determination of Phase Diagram of Electron-Hole Systems in 4H-SiC Determination of Phase Diagram of Electron-Hole Systems in 4H-SiC JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 82, 6 JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 82, 6 JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 82, 6 2013/06 英語 研究論文(学術雑誌) 公開
細井 卓治, 東雲 秀司, 柏木 勇作, 保坂 重敏, 中村 亮太, 中野 佑紀, 浅原 浩和, 中村 孝, 木本 恒暢, 志村 考功, 渡部 平司 細井 卓治, 東雲 秀司, 柏木 勇作, 保坂 重敏, 中村 亮太, 中野 佑紀, 浅原 浩和, 中村 孝, 木本 恒暢, 志村 考功, 渡部 平司 T. Hosoi, S. Azumo, Y. Kashiwagi, S. Hosaka, R. Nakamura, Y. Nakano, H. Asahara, T. Nakamura, T. Kimoto, T. Shimura, H. Watanabe SiCパワーMOSFET向け高誘電率ゲート絶縁膜技術 (依頼講演) SiCパワーMOSFET向け高誘電率ゲート絶縁膜技術 (依頼講演) Implementation of High-k Gate Dielectrics in SiC Power MOSFET (Invited) 電子情報通信学会 シリコン材料・デバイス(SDM)研究会(応用物理学会、シリコンテクノロジー分科会との合同開催) 電子情報通信学会 シリコン材料・デバイス(SDM)研究会(応用物理学会、シリコンテクノロジー分科会との合同開催) IEICE Technical Committee on Silicon Device and Materials (SDM) 2013/06 日本語 研究論文(その他学術会議資料等) 公開
Koutarou Kawahara, Jun Suda, Tsunenobu Kimoto Koutarou Kawahara, Jun Suda, Tsunenobu Kimoto Koutarou Kawahara, Jun Suda, Tsunenobu Kimoto Deep Levels Generated by Thermal Oxidation in n-Type 4H-SiC Deep Levels Generated by Thermal Oxidation in n-Type 4H-SiC Deep Levels Generated by Thermal Oxidation in n-Type 4H-SiC APPLIED PHYSICS EXPRESS, 6, 5 APPLIED PHYSICS EXPRESS, 6, 5 APPLIED PHYSICS EXPRESS, 6, 5 2013/05 英語 研究論文(学術雑誌) 公開
Masanobu Yoshikawa, Hirohund Seki, Tsuneyuki Yamane, Yuichiro Nanen, Muneharu Kato, Tsunenobu Kimoto Masanobu Yoshikawa, Hirohund Seki, Tsuneyuki Yamane, Yuichiro Nanen, Muneharu Kato, Tsunenobu Kimoto Masanobu Yoshikawa, Hirohund Seki, Tsuneyuki Yamane, Yuichiro Nanen, Muneharu Kato, Tsunenobu Kimoto Abnormal Behavior of Longitudinal Optical Phonon in Silicon Dioxide Films on 4H-SiC Bulk Epitaxial Substrate Using Fourier Transform Infrared (FT-IR) Spectroscopy Abnormal Behavior of Longitudinal Optical Phonon in Silicon Dioxide Films on 4H-SiC Bulk Epitaxial Substrate Using Fourier Transform Infrared (FT-IR) Spectroscopy Abnormal Behavior of Longitudinal Optical Phonon in Silicon Dioxide Films on 4H-SiC Bulk Epitaxial Substrate Using Fourier Transform Infrared (FT-IR) Spectroscopy APPLIED SPECTROSCOPY, 67, 5, 542-545 APPLIED SPECTROSCOPY, 67, 5, 542-545 APPLIED SPECTROSCOPY, 67, 5, 542-545 2013/05 英語 研究論文(学術雑誌) 公開
G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto First-principles study of Cl diffusion in cubic SiC First-principles study of Cl diffusion in cubic SiC First-principles study of Cl diffusion in cubic SiC Journal of Applied Physics, 113, 13 Journal of Applied Physics, 113, 13 Journal of Applied Physics, 113, 13 2013/04/07 英語 研究論文(国際会議プロシーディングス) 公開
G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy APPLIED PHYSICS LETTERS, 102, 15 APPLIED PHYSICS LETTERS, 102, 15 APPLIED PHYSICS LETTERS, 102, 15 2013/04 英語 研究論文(学術雑誌) 公開
Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto Microscopic Investigation of the Electrical and Structural Properties of Conductive Filaments Formed in Pt/NiO/Pt Resistive Switching Cells Microscopic Investigation of the Electrical and Structural Properties of Conductive Filaments Formed in Pt/NiO/Pt Resistive Switching Cells Microscopic Investigation of the Electrical and Structural Properties of Conductive Filaments Formed in Pt/NiO/Pt Resistive Switching Cells JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 4 JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 4 JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 4 2013/04 英語 研究論文(学術雑誌) 公開
Koutarou Kawahara, Xuan Thang Trinh, Nguyen Tien Son, Erik Janzen, Jun Suda, Tsunenobu Kimoto Koutarou Kawahara, Xuan Thang Trinh, Nguyen Tien Son, Erik Janzen, Jun Suda, Tsunenobu Kimoto Koutarou Kawahara, Xuan Thang Trinh, Nguyen Tien Son, Erik Janzen, Jun Suda, Tsunenobu Kimoto Investigation on origin of Z(1/2) center in SiC by deep level transient spectroscopy and electron paramagnetic resonance Investigation on origin of Z(1/2) center in SiC by deep level transient spectroscopy and electron paramagnetic resonance Investigation on origin of Z(1/2) center in SiC by deep level transient spectroscopy and electron paramagnetic resonance APPLIED PHYSICS LETTERS, 102, 11 APPLIED PHYSICS LETTERS, 102, 11 APPLIED PHYSICS LETTERS, 102, 11 2013/03 英語 研究論文(学術雑誌) 公開
Yuichiro Nanen, Muneharu Kato, Jun Suda, Tsunenobu Kimoto Yuichiro Nanen, Muneharu Kato, Jun Suda, Tsunenobu Kimoto Yuichiro Nanen, Muneharu Kato, Jun Suda, Tsunenobu Kimoto Effects of Nitridation on 4H-SiC MOSFETs Fabricated on Various Crystal Faces Effects of Nitridation on 4H-SiC MOSFETs Fabricated on Various Crystal Faces Effects of Nitridation on 4H-SiC MOSFETs Fabricated on Various Crystal Faces IEEE TRANSACTIONS ON ELECTRON DEVICES, 60, 3, 1260-1262 IEEE TRANSACTIONS ON ELECTRON DEVICES, 60, 3, 1260-1262 IEEE TRANSACTIONS ON ELECTRON DEVICES, 60, 3, 1260-1262 2013/03 英語 研究論文(学術雑誌) 公開
Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto Orientation and Shape Effects on Ballistic Transport Properties in Gate-All-Around Rectangular Germanium Nanowire nFETs Orientation and Shape Effects on Ballistic Transport Properties in Gate-All-Around Rectangular Germanium Nanowire nFETs Orientation and Shape Effects on Ballistic Transport Properties in Gate-All-Around Rectangular Germanium Nanowire nFETs IEEE TRANSACTIONS ON ELECTRON DEVICES, 60, 3, 944-950 IEEE TRANSACTIONS ON ELECTRON DEVICES, 60, 3, 944-950 IEEE TRANSACTIONS ON ELECTRON DEVICES, 60, 3, 944-950 2013/03 英語 研究論文(学術雑誌) 公開
M. Yoshikawa, K. Inoue, H. Seki, Y. Nanen, M. Kato, T. Kimoto M. Yoshikawa, K. Inoue, H. Seki, Y. Nanen, M. Kato, T. Kimoto M. Yoshikawa, K. Inoue, H. Seki, Y. Nanen, M. Kato, T. Kimoto Characterization of silicon dioxide films on 4H-SiC (0001) Si, (1-100) M, and (11-20) A faces by cathodoluminescence spectroscopy Characterization of silicon dioxide films on 4H-SiC (0001) Si, (1-100) M, and (11-20) A faces by cathodoluminescence spectroscopy Characterization of silicon dioxide films on 4H-SiC (0001) Si, (1-100) M, and (11-20) A faces by cathodoluminescence spectroscopy APPLIED PHYSICS LETTERS, 102, 5 APPLIED PHYSICS LETTERS, 102, 5 APPLIED PHYSICS LETTERS, 102, 5 2013/02 英語 研究論文(学術雑誌) 公開
A. Koizumi, V. P. Markevich, N. Iwamoto, S. Sasaki, T. Ohshima, K. Kojima, T. Kimoto, K. Uchida, S. Nozaki, B. Hamilton, A. R. Peaker A. Koizumi, V. P. Markevich, N. Iwamoto, S. Sasaki, T. Ohshima, K. Kojima, T. Kimoto, K. Uchida, S. Nozaki, B. Hamilton, A. R. Peaker A. Koizumi, V. P. Markevich, N. Iwamoto, S. Sasaki, T. Ohshima, K. Kojima, T. Kimoto, K. Uchida, S. Nozaki, B. Hamilton, A. R. Peaker E-1/E-2 traps in 6H-SiC studied with Laplace deep level transient spectroscopy E-1/E-2 traps in 6H-SiC studied with Laplace deep level transient spectroscopy E-1/E-2 traps in 6H-SiC studied with Laplace deep level transient spectroscopy APPLIED PHYSICS LETTERS, 102, 3 APPLIED PHYSICS LETTERS, 102, 3 APPLIED PHYSICS LETTERS, 102, 3 2013/01 英語 研究論文(学術雑誌) 公開
Koutarou Kawahara, Jun Suda, Tsunenobu Kimoto Koutarou Kawahara, Jun Suda, Tsunenobu Kimoto Koutarou Kawahara, Jun Suda, Tsunenobu Kimoto Deep levels generated by thermal oxidation in p-type 4H-SiC Deep levels generated by thermal oxidation in p-type 4H-SiC Deep levels generated by thermal oxidation in p-type 4H-SiC JOURNAL OF APPLIED PHYSICS, 113, 3 JOURNAL OF APPLIED PHYSICS, 113, 3 JOURNAL OF APPLIED PHYSICS, 113, 3 2013/01 英語 研究論文(学術雑誌) 公開
Takafumi Okuda, Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Takafumi Okuda, Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Takafumi Okuda, Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Long Photoconductivity Decay Characteristics in p-Type 4H-SiC Bulk Crystals Long Photoconductivity Decay Characteristics in p-Type 4H-SiC Bulk Crystals Long Photoconductivity Decay Characteristics in p-Type 4H-SiC Bulk Crystals JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 1 JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 1 JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 1 2013/01 英語 研究論文(学術雑誌) 公開
Hajime Tanaka, Naoya Morioka, Seigo Mori, Jun Suda, Tsunenobu Kimoto Hajime Tanaka, Naoya Morioka, Seigo Mori, Jun Suda, Tsunenobu Kimoto Hajime Tanaka, Naoya Morioka, Seigo Mori, Jun Suda, Tsunenobu Kimoto Size and geometric effects on conduction band structure of GaAs nanowires Size and geometric effects on conduction band structure of GaAs nanowires Size and geometric effects on conduction band structure of GaAs nanowires IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai, 118-119 IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai, 118-119 IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai, 118-119 2013 英語 研究論文(国際会議プロシーディングス) 公開
Giovanni Alfieri, Tsunenobu Kimoto Giovanni Alfieri, Tsunenobu Kimoto Giovanni Alfieri, Tsunenobu Kimoto Diffusion study of chlorine in SiC by first principles calculations Diffusion study of chlorine in SiC by first principles calculations Diffusion study of chlorine in SiC by first principles calculations SILICON CARBIDE AND RELATED MATERIALS 2012, 740-742, 381-384 SILICON CARBIDE AND RELATED MATERIALS 2012, 740-742, 381-384 SILICON CARBIDE AND RELATED MATERIALS 2012, 740-742, 381-384 2013 英語 研究論文(国際会議プロシーディングス) 公開
Jonas Weber, Svetlana Beljakowa, Heiko B. Weber, Gerhard Pensl, Bernd Zippelius, Tsunenobu Kimoto, Michael Krieger Jonas Weber, Svetlana Beljakowa, Heiko B. Weber, Gerhard Pensl, Bernd Zippelius, Tsunenobu Kimoto, Michael Krieger Jonas Weber, Svetlana Beljakowa, Heiko B. Weber, Gerhard Pensl, Bernd Zippelius, Tsunenobu Kimoto, Michael Krieger Determination of the Electrical Capture Process of the EH6-Center in n-type 4H-SiC Determination of the Electrical Capture Process of the EH6-Center in n-type 4H-SiC Determination of the Electrical Capture Process of the EH6-Center in n-type 4H-SiC SILICON CARBIDE AND RELATED MATERIALS 2012, 740-742, 377-+ SILICON CARBIDE AND RELATED MATERIALS 2012, 740-742, 377-+ SILICON CARBIDE AND RELATED MATERIALS 2012, 740-742, 377-+ 2013 英語 研究論文(国際会議プロシーディングス) 公開
T. Hatakeyama, T. Shimizu, T. Suzuki, Y. Nakabayashi, H. Okumura, T. Kimoto T. Hatakeyama, T. Shimizu, T. Suzuki, Y. Nakabayashi, H. Okumura, T. Kimoto T. Hatakeyama, T. Shimizu, T. Suzuki, Y. Nakabayashi, H. Okumura, T. Kimoto Deep-level-transient spectroscopy characterization of mobility-limiting traps in SiO2/SiC interfaces on C-face 4H-SiC Deep-level-transient spectroscopy characterization of mobility-limiting traps in SiO2/SiC interfaces on C-face 4H-SiC Deep-level-transient spectroscopy characterization of mobility-limiting traps in SiO2/SiC interfaces on C-face 4H-SiC Materials Science Forum, 740-742, 477-480 Materials Science Forum, 740-742, 477-480 Materials Science Forum, 740-742, 477-480 2013 英語 研究論文(国際会議プロシーディングス) 公開
Giovanni Alfieri, Tsunenobu Kimoto Giovanni Alfieri, Tsunenobu Kimoto Giovanni Alfieri, Tsunenobu Kimoto Laplace transform deep level transient spectroscopy study of the EH6/7 center Laplace transform deep level transient spectroscopy study of the EH6/7 center Laplace transform deep level transient spectroscopy study of the EH6/7 center SILICON CARBIDE AND RELATED MATERIALS 2012, 740-742, 645-648 SILICON CARBIDE AND RELATED MATERIALS 2012, 740-742, 645-648 SILICON CARBIDE AND RELATED MATERIALS 2012, 740-742, 645-648 2013 英語 研究論文(国際会議プロシーディングス) 公開
Takafumi Okuda, Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Takafumi Okuda, Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Takafumi Okuda, Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Persistent photoconductivity in p-type 4H-SiC bulk crystals Persistent photoconductivity in p-type 4H-SiC bulk crystals Persistent photoconductivity in p-type 4H-SiC bulk crystals Materials Science Forum, 740-742, 413-416 Materials Science Forum, 740-742, 413-416 Materials Science Forum, 740-742, 413-416 2013 英語 研究論文(国際会議プロシーディングス) 公開
細井 卓治, 東雲 秀司, 柏木 勇作, 保坂 重敏, 中村 亮太, 箕谷 周平, 中野 佑紀, 浅原 浩和, 中村 孝, 木本 恒暢, 志村 考功, 渡部 平司 細井 卓治, 東雲 秀司, 柏木 勇作, 保坂 重敏, 中村 亮太, 箕谷 周平, 中野 佑紀, 浅原 浩和, 中村 孝, 木本 恒暢, 志村 考功, 渡部 平司 AlONゲート絶縁膜導入によるSiCパワーMOSFETの高性能化及び信頼性向上 AlONゲート絶縁膜導入によるSiCパワーMOSFETの高性能化及び信頼性向上 電子情報通信学会 シリコン材料・デバイス研究会(SDM) 電子情報通信学会 シリコン材料・デバイス研究会(SDM) 2013/01 日本語 研究論文(その他学術会議資料等) 公開
Yoshiyuki Yonezawa, Tomonori Mizushima, Kensuke Takenaka, Hiroyuki Fujisawa, Tomohisa Kato, Shinsuke Harada, Yasunori Tanaka, Mitsuo Okamoto, Mitsuru Sometani, Dai Okamoto, Naoki Kumagai, Shinichiro Matsunaga, Tadayoshi Deguchi, Manabu Arai, Tetsuo Hatakeyama, Youichi Makifuchi, Tsuyoshi Araoka, Naoyuki Oose, Takashi Tsutsumi, Mitsuru Yoshikawa, Katsumi Tatera, Masayuki Harashima, Yukio Sano, Eisuke Morisaki, Manabu Takei, Masaaki Miyajima, Hiroshi Kimura, Akihiro Otsuki, Kenji Fukuda, Hajime Okumura, Tsunenobu Kimoto Yoshiyuki Yonezawa, Tomonori Mizushima, Kensuke Takenaka, Hiroyuki Fujisawa, Tomohisa Kato, Shinsuke Harada, Yasunori Tanaka, Mitsuo Okamoto, Mitsuru Sometani, Dai Okamoto, Naoki Kumagai, Shinichiro Matsunaga, Tadayoshi Deguchi, Manabu Arai, Tetsuo Hatakeyama, Youichi Makifuchi, Tsuyoshi Araoka, Naoyuki Oose, Takashi Tsutsumi, Mitsuru Yoshikawa, Katsumi Tatera, Masayuki Harashima, Yukio Sano, Eisuke Morisaki, Manabu Takei, Masaaki Miyajima, Hiroshi Kimura, Akihiro Otsuki, Kenji Fukuda, Hajime Okumura, Tsunenobu Kimoto Yoshiyuki Yonezawa, Tomonori Mizushima, Kensuke Takenaka, Hiroyuki Fujisawa, Tomohisa Kato, Shinsuke Harada, Yasunori Tanaka, Mitsuo Okamoto, Mitsuru Sometani, Dai Okamoto, Naoki Kumagai, Shinichiro Matsunaga, Tadayoshi Deguchi, Manabu Arai, Tetsuo Hatakeyama, Youichi Makifuchi, Tsuyoshi Araoka, Naoyuki Oose, Takashi Tsutsumi, Mitsuru Yoshikawa, Katsumi Tatera, Masayuki Harashima, Yukio Sano, Eisuke Morisaki, Manabu Takei, Masaaki Miyajima, Hiroshi Kimura, Akihiro Otsuki, Kenji Fukuda, Hajime Okumura, Tsunenobu Kimoto Low V-f and Highly Reliable 16 kV Ultrahigh Voltage SiC Flip-Type n-channel Implantation and Epitaxial IGBT Low V-f and Highly Reliable 16 kV Ultrahigh Voltage SiC Flip-Type n-channel Implantation and Epitaxial IGBT Low V-f and Highly Reliable 16 kV Ultrahigh Voltage SiC Flip-Type n-channel Implantation and Epitaxial IGBT 2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2013 英語 研究論文(国際会議プロシーディングス) 公開
Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto, Tsunenobu Kimoto Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto, Tsunenobu Kimoto Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto, Tsunenobu Kimoto Impact of the oxygen amount of an oxide layer and post annealing on forming voltage and initial resistance of nio-based resistive switching cells Impact of the oxygen amount of an oxide layer and post annealing on forming voltage and initial resistance of nio-based resistive switching cells Impact of the oxygen amount of an oxide layer and post annealing on forming voltage and initial resistance of nio-based resistive switching cells Materials Research Society Proceedings, 1562 Materials Research Society Proceedings, 1562 Materials Research Society Proceedings, 1562 2013/01 研究論文(国際会議プロシーディングス) 公開
梶直樹, 丹羽弘樹, 須田淳, 木本恒暢 梶直樹, 丹羽弘樹, 須田淳, 木本恒暢 超高耐圧SiC PiNダイオードの作製と低オン抵抗化 超高耐圧SiC PiNダイオードの作製と低オン抵抗化 電子情報通信学会技術研究報告, 112, 337(SDM2012 115-137), 1-5 電子情報通信学会技術研究報告, 112, 337(SDM2012 115-137), 1-5 , 112, 337(SDM2012 115-137), 1-5 2012/11/30 日本語 公開
G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto The Effects of Transverse Electric Fields on the Electronic Properties of SiC Nanostructures The Effects of Transverse Electric Fields on the Electronic Properties of SiC Nanostructures The Effects of Transverse Electric Fields on the Electronic Properties of SiC Nanostructures JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 9, 11, 1850-1859 JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 9, 11, 1850-1859 JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 9, 11, 1850-1859 2012/11 英語 公開
Naoki Watanabe, Tsunenobu Kimoto, Jun Suda Naoki Watanabe, Tsunenobu Kimoto, Jun Suda Naoki Watanabe, Tsunenobu Kimoto, Jun Suda Thermo-Optic Coefficients of 4H-SiC, GaN, and AIN for Ultraviolet to Infrared Regions up to 500 degrees C Thermo-Optic Coefficients of 4H-SiC, GaN, and AIN for Ultraviolet to Infrared Regions up to 500 degrees C Thermo-Optic Coefficients of 4H-SiC, GaN, and AIN for Ultraviolet to Infrared Regions up to 500 degrees C JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 11 JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 11 JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 11 2012/11 英語 研究論文(学術雑誌) 公開
Hiroki Miyake, Takafumi Okuda, Hiroki Niwa, Tsunenobu Kimoto, Jun Suda Hiroki Miyake, Takafumi Okuda, Hiroki Niwa, Tsunenobu Kimoto, Jun Suda Hiroki Miyake, Takafumi Okuda, Hiroki Niwa, Tsunenobu Kimoto, Jun Suda 21-kV SiC BJTs With Space-Modulated Junction Termination Extension 21-kV SiC BJTs With Space-Modulated Junction Termination Extension 21-kV SiC BJTs With Space-Modulated Junction Termination Extension IEEE ELECTRON DEVICE LETTERS, 33, 11, 1598-1600 IEEE ELECTRON DEVICE LETTERS, 33, 11, 1598-1600 IEEE ELECTRON DEVICE LETTERS, 33, 11, 1598-1600 2012/11 英語 研究論文(学術雑誌) 公開
N. T. Son, X. T. Trinh, L. S. Lovlie, B. G. Svensson, K. Kawahara, J. Suda, T. Kimoto, T. Umeda, J. Isoya, T. Makino, T. Ohshima, E. Janzen N. T. Son, X. T. Trinh, L. S. Lovlie, B. G. Svensson, K. Kawahara, J. Suda, T. Kimoto, T. Umeda, J. Isoya, T. Makino, T. Ohshima, E. Janzen N. T. Son, X. T. Trinh, L. S. Lovlie, B. G. Svensson, K. Kawahara, J. Suda, T. Kimoto, T. Umeda, J. Isoya, T. Makino, T. Ohshima, E. Janzen Negative-U System of Carbon Vacancy in 4H-SiC Negative-U System of Carbon Vacancy in 4H-SiC Negative-U System of Carbon Vacancy in 4H-SiC PHYSICAL REVIEW LETTERS, 109, 18 PHYSICAL REVIEW LETTERS, 109, 18 PHYSICAL REVIEW LETTERS, 109, 18 2012/10 英語 研究論文(学術雑誌) 公開
Hironori Okumura, Tsunenobu Kimoto, Jun Suda Hironori Okumura, Tsunenobu Kimoto, Jun Suda Hironori Okumura, Tsunenobu Kimoto, Jun Suda Over-700-nm Critical Thickness of AlN Grown on 6H-SiC(0001) by Molecular Beam Epitaxy Over-700-nm Critical Thickness of AlN Grown on 6H-SiC(0001) by Molecular Beam Epitaxy Over-700-nm Critical Thickness of AlN Grown on 6H-SiC(0001) by Molecular Beam Epitaxy APPLIED PHYSICS EXPRESS, 5, 10 APPLIED PHYSICS EXPRESS, 5, 10 APPLIED PHYSICS EXPRESS, 5, 10 2012/10 英語 研究論文(学術雑誌) 公開
Shuhei Ichikawa, Koutarou Kawahara, Jun Suda, Tsunenobu Kimoto Shuhei Ichikawa, Koutarou Kawahara, Jun Suda, Tsunenobu Kimoto Shuhei Ichikawa, Koutarou Kawahara, Jun Suda, Tsunenobu Kimoto Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes APPLIED PHYSICS EXPRESS, 5, 10 APPLIED PHYSICS EXPRESS, 5, 10 APPLIED PHYSICS EXPRESS, 5, 10 2012/10 英語 研究論文(学術雑誌) 公開
Hiroki Niwa, Gan Feng, Jun Suda, Tsunenobu Kimoto Hiroki Niwa, Gan Feng, Jun Suda, Tsunenobu Kimoto Hiroki Niwa, Gan Feng, Jun Suda, Tsunenobu Kimoto Breakdown Characteristics of 15-kV-Class 4H-SiC PiN Diodes With Various Junction Termination Structures Breakdown Characteristics of 15-kV-Class 4H-SiC PiN Diodes With Various Junction Termination Structures Breakdown Characteristics of 15-kV-Class 4H-SiC PiN Diodes With Various Junction Termination Structures IEEE TRANSACTIONS ON ELECTRON DEVICES, 59, 10, 2748-2752 IEEE TRANSACTIONS ON ELECTRON DEVICES, 59, 10, 2748-2752 IEEE TRANSACTIONS ON ELECTRON DEVICES, 59, 10, 2748-2752 2012/10 英語 研究論文(学術雑誌) 公開
T. Hayashi, K. Asano, J. Suda, T. Kimoto T. Hayashi, K. Asano, J. Suda, T. Kimoto T. Hayashi, K. Asano, J. Suda, T. Kimoto Enhancement and control of carrier lifetimes in p-type 4H-SiC epilayers Enhancement and control of carrier lifetimes in p-type 4H-SiC epilayers Enhancement and control of carrier lifetimes in p-type 4H-SiC epilayers JOURNAL OF APPLIED PHYSICS, 112, 6 JOURNAL OF APPLIED PHYSICS, 112, 6 JOURNAL OF APPLIED PHYSICS, 112, 6 2012/09 英語 研究論文(学術雑誌) 公開
G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto Capacitance spectroscopy study of deep levels in Cl-implanted 4H-SiC Capacitance spectroscopy study of deep levels in Cl-implanted 4H-SiC Capacitance spectroscopy study of deep levels in Cl-implanted 4H-SiC JOURNAL OF APPLIED PHYSICS, 112, 6 JOURNAL OF APPLIED PHYSICS, 112, 6 JOURNAL OF APPLIED PHYSICS, 112, 6 2012/09 英語 研究論文(学術雑誌) 公開
Alberto Castellazzi, Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara Alberto Castellazzi, Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara Alberto Castellazzi, Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara Thermal instability effects in SiC Power MOSFETs Thermal instability effects in SiC Power MOSFETs Thermal instability effects in SiC Power MOSFETs MICROELECTRONICS RELIABILITY, 52, 9-10, 2414-2419 MICROELECTRONICS RELIABILITY, 52, 9-10, 2414-2419 MICROELECTRONICS RELIABILITY, 52, 9-10, 2414-2419 2012/09 英語 研究論文(学術雑誌) 公開
Naoki Watanabe, Tsunenobu Kimoto, Jun Suda Naoki Watanabe, Tsunenobu Kimoto, Jun Suda Naoki Watanabe, Tsunenobu Kimoto, Jun Suda 4H-SiC pn Photodiodes with Temperature-Independent Photoresponse up to 300 degrees C 4H-SiC pn Photodiodes with Temperature-Independent Photoresponse up to 300 degrees C 4H-SiC pn Photodiodes with Temperature-Independent Photoresponse up to 300 degrees C APPLIED PHYSICS EXPRESS, 5, 9 APPLIED PHYSICS EXPRESS, 5, 9 APPLIED PHYSICS EXPRESS, 5, 9 2012/09 英語 研究論文(学術雑誌) 公開
Hironori Yoshioka, Takashi Nakamura, Tsunenobu Kimoto Hironori Yoshioka, Takashi Nakamura, Tsunenobu Kimoto Hironori Yoshioka, Takashi Nakamura, Tsunenobu Kimoto Generation of very fast states by nitridation of the SiO2/SiC interface Generation of very fast states by nitridation of the SiO2/SiC interface Generation of very fast states by nitridation of the SiO2/SiC interface JOURNAL OF APPLIED PHYSICS, 112, 2 JOURNAL OF APPLIED PHYSICS, 112, 2 JOURNAL OF APPLIED PHYSICS, 112, 2 2012/07 英語 研究論文(学術雑誌) 公開
Hiroki Niwa, Jun Suda, Tsunenobu Kimoto Hiroki Niwa, Jun Suda, Tsunenobu Kimoto Hiroki Niwa, Jun Suda, Tsunenobu Kimoto 21.7 kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension 21.7 kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension 21.7 kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension APPLIED PHYSICS EXPRESS, 5, 6 APPLIED PHYSICS EXPRESS, 5, 6 APPLIED PHYSICS EXPRESS, 5, 6 2012/06 英語 研究論文(学術雑誌) 公開
S. Sasaki, J. Suda, T. Kimoto S. Sasaki, J. Suda, T. Kimoto S. Sasaki, J. Suda, T. Kimoto Lattice mismatch and crystallographic tilt induced by high-dose ion-implantation into 4H-SiC Lattice mismatch and crystallographic tilt induced by high-dose ion-implantation into 4H-SiC Lattice mismatch and crystallographic tilt induced by high-dose ion-implantation into 4H-SiC JOURNAL OF APPLIED PHYSICS, 111, 10 JOURNAL OF APPLIED PHYSICS, 111, 10 JOURNAL OF APPLIED PHYSICS, 111, 10 2012/05 英語 研究論文(学術雑誌) 公開
G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto Theoretical study of Cl-related defect complexes in cubic SiC Theoretical study of Cl-related defect complexes in cubic SiC Theoretical study of Cl-related defect complexes in cubic SiC JOURNAL OF APPLIED PHYSICS, 111, 10 JOURNAL OF APPLIED PHYSICS, 111, 10 JOURNAL OF APPLIED PHYSICS, 111, 10 2012/05 英語 研究論文(学術雑誌) 公開
Ryosuke Kikuchi, Hironori Okumura, Mitsuaki Kaneko, Tsunenobu Kimoto, Jun Suda Ryosuke Kikuchi, Hironori Okumura, Mitsuaki Kaneko, Tsunenobu Kimoto, Jun Suda Ryosuke Kikuchi, Hironori Okumura, Mitsuaki Kaneko, Tsunenobu Kimoto, Jun Suda AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC(0001) Substrates by Molecular Beam Epitaxy AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC(0001) Substrates by Molecular Beam Epitaxy AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC(0001) Substrates by Molecular Beam Epitaxy APPLIED PHYSICS EXPRESS, 5, 5 APPLIED PHYSICS EXPRESS, 5, 5 APPLIED PHYSICS EXPRESS, 5, 5 2012/05 英語 研究論文(学術雑誌) 公開
Takafumi Okuda, Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Takafumi Okuda, Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Takafumi Okuda, Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Current Transport Characteristics of Quasi-AlxGa1-xN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities Current Transport Characteristics of Quasi-AlxGa1-xN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities Current Transport Characteristics of Quasi-AlxGa1-xN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 4 JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 4 JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 4 2012/04 英語 研究論文(学術雑誌) 公開
F. Yan, R. P. Devaty, W. J. Choyke, A. Gali, T. Kimoto, T. Ohshima, G. Pensl F. Yan, R. P. Devaty, W. J. Choyke, A. Gali, T. Kimoto, T. Ohshima, G. Pensl F. Yan, R. P. Devaty, W. J. Choyke, A. Gali, T. Kimoto, T. Ohshima, G. Pensl Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC APPLIED PHYSICS LETTERS, 100, 13 APPLIED PHYSICS LETTERS, 100, 13 APPLIED PHYSICS LETTERS, 100, 13 2012/03 英語 研究論文(学術雑誌) 公開
Koutarou Kawahara, Jun Suda, Tsunenobu Kimoto Koutarou Kawahara, Jun Suda, Tsunenobu Kimoto Koutarou Kawahara, Jun Suda, Tsunenobu Kimoto Analytical model for reduction of deep levels in SiC by thermal oxidation Analytical model for reduction of deep levels in SiC by thermal oxidation Analytical model for reduction of deep levels in SiC by thermal oxidation JOURNAL OF APPLIED PHYSICS, 111, 5 JOURNAL OF APPLIED PHYSICS, 111, 5 JOURNAL OF APPLIED PHYSICS, 111, 5 2012/03 英語 研究論文(学術雑誌) 公開
木本 恒暢 木本 恒暢 <教室通信>博士課程前後期連携教育プログラムについて <教室通信>博士課程前後期連携教育プログラムについて Cue : 京都大学電気関係教室技術情報誌, 27, 64-64 Cue : 京都大学電気関係教室技術情報誌, 27, 64-64 , 27, 64-64 2012/03 日本語 公開
Katsunori Danno, Hiroaki Saitoh, Akinori Seki, Takayuki Shirai, Hiroshi Suzuki, Takeshi Bessho, Yoichiro Kawai, Tsunenobu Kimoto Katsunori Danno, Hiroaki Saitoh, Akinori Seki, Takayuki Shirai, Hiroshi Suzuki, Takeshi Bessho, Yoichiro Kawai, Tsunenobu Kimoto Katsunori Danno, Hiroaki Saitoh, Akinori Seki, Takayuki Shirai, Hiroshi Suzuki, Takeshi Bessho, Yoichiro Kawai, Tsunenobu Kimoto Diffusion of Transition Metals in 4H-SiC and Trials of Impurity Gettering Diffusion of Transition Metals in 4H-SiC and Trials of Impurity Gettering Diffusion of Transition Metals in 4H-SiC and Trials of Impurity Gettering APPLIED PHYSICS EXPRESS, 5, 3 APPLIED PHYSICS EXPRESS, 5, 3 APPLIED PHYSICS EXPRESS, 5, 3 2012/03 英語 研究論文(学術雑誌) 公開
M. Yoshikawa, S. Ogawa, K. Inoue, H. Seki, Y. Tanahashi, H. Sako, Y. Nanen, M. Kato, T. Kimoto M. Yoshikawa, S. Ogawa, K. Inoue, H. Seki, Y. Tanahashi, H. Sako, Y. Nanen, M. Kato, T. Kimoto M. Yoshikawa, S. Ogawa, K. Inoue, H. Seki, Y. Tanahashi, H. Sako, Y. Nanen, M. Kato, T. Kimoto Characterization of silicon dioxide films on 4H-SiC Si (0001) face by cathodoluminescence spectroscopy and x-ray photoelectron spectroscopy Characterization of silicon dioxide films on 4H-SiC Si (0001) face by cathodoluminescence spectroscopy and x-ray photoelectron spectroscopy Characterization of silicon dioxide films on 4H-SiC Si (0001) face by cathodoluminescence spectroscopy and x-ray photoelectron spectroscopy APPLIED PHYSICS LETTERS, 100, 8 APPLIED PHYSICS LETTERS, 100, 8 APPLIED PHYSICS LETTERS, 100, 8 2012/02 英語 研究論文(学術雑誌) 公開
Bernd Zippelius, Jun Suda, Tsunenobu Kimoto Bernd Zippelius, Jun Suda, Tsunenobu Kimoto Bernd Zippelius, Jun Suda, Tsunenobu Kimoto High temperature annealing of n-type 4H-SiC: Impact on intrinsic defects and carrier lifetime High temperature annealing of n-type 4H-SiC: Impact on intrinsic defects and carrier lifetime High temperature annealing of n-type 4H-SiC: Impact on intrinsic defects and carrier lifetime JOURNAL OF APPLIED PHYSICS, 111, 3 JOURNAL OF APPLIED PHYSICS, 111, 3 JOURNAL OF APPLIED PHYSICS, 111, 3 2012/02 英語 研究論文(学術雑誌) 公開
Hironori Okumura, Tsunenobu Kimoto, Jun Suda Hironori Okumura, Tsunenobu Kimoto, Jun Suda Hironori Okumura, Tsunenobu Kimoto, Jun Suda Growth of Nitrogen-Polar 2H-AlN on Step-Height-Controlled 6H-SiC(000(1)over-bar) Substrate by Molecular-Beam Epitaxy Growth of Nitrogen-Polar 2H-AlN on Step-Height-Controlled 6H-SiC(000(1)over-bar) Substrate by Molecular-Beam Epitaxy Growth of Nitrogen-Polar 2H-AlN on Step-Height-Controlled 6H-SiC(000(1)over-bar) Substrate by Molecular-Beam Epitaxy JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 2 JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 2 JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 2 2012/02 英語 研究論文(学術雑誌) 公開
Gan Feng, Jun Suda, Tsunenobu Kimoto Gan Feng, Jun Suda, Tsunenobu Kimoto Gan Feng, Jun Suda, Tsunenobu Kimoto Space-Modulated Junction Termination Extension for Ultrahigh-Voltage p-i-n Diodes in 4H-SiC Space-Modulated Junction Termination Extension for Ultrahigh-Voltage p-i-n Diodes in 4H-SiC Space-Modulated Junction Termination Extension for Ultrahigh-Voltage p-i-n Diodes in 4H-SiC IEEE TRANSACTIONS ON ELECTRON DEVICES, 59, 2, 414-418 IEEE TRANSACTIONS ON ELECTRON DEVICES, 59, 2, 414-418 IEEE TRANSACTIONS ON ELECTRON DEVICES, 59, 2, 414-418 2012/02 英語 研究論文(学術雑誌) 公開
Hironori Yoshioka, Takashi Nakamura, Tsunenobu Kimoto Hironori Yoshioka, Takashi Nakamura, Tsunenobu Kimoto Hironori Yoshioka, Takashi Nakamura, Tsunenobu Kimoto Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance JOURNAL OF APPLIED PHYSICS, 111, 1 JOURNAL OF APPLIED PHYSICS, 111, 1 JOURNAL OF APPLIED PHYSICS, 111, 1 2012/01 英語 研究論文(学術雑誌) 公開
T. Kimoto, J. Suda, G. Feng, H. Miyake, K. Kawahara, H. Niwa, T. Okuda, S. Ichikawa, Y. Nishi T. Kimoto, J. Suda, G. Feng, H. Miyake, K. Kawahara, H. Niwa, T. Okuda, S. Ichikawa, Y. Nishi T. Kimoto, J. Suda, G. Feng, H. Miyake, K. Kawahara, H. Niwa, T. Okuda, S. Ichikawa, Y. Nishi Defect Electronics in SiC and Fabrication of Ultrahigh-Voltage Bipolar Devices Defect Electronics in SiC and Fabrication of Ultrahigh-Voltage Bipolar Devices Defect Electronics in SiC and Fabrication of Ultrahigh-Voltage Bipolar Devices GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 2, 50, 3, 25-35 GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 2, 50, 3, 25-35 GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 2, 50, 3, 25-35 2012 英語 研究論文(国際会議プロシーディングス) 公開
Takuji Hosoi, Shuji Azumo, Yusaku Kashiwagi, Shigetoshi Hosaka, Ryota Nakamura, Shuhei Mitani, Yuki Nakano, Hirokazu Asahara, Takashi Nakamura, Tsunenobu Kimoto, Takayoshi Shimura, Heiji Watanabe Takuji Hosoi, Shuji Azumo, Yusaku Kashiwagi, Shigetoshi Hosaka, Ryota Nakamura, Shuhei Mitani, Yuki Nakano, Hirokazu Asahara, Takashi Nakamura, Tsunenobu Kimoto, Takayoshi Shimura, Heiji Watanabe Takuji Hosoi, Shuji Azumo, Yusaku Kashiwagi, Shigetoshi Hosaka, Ryota Nakamura, Shuhei Mitani, Yuki Nakano, Hirokazu Asahara, Takashi Nakamura, Tsunenobu Kimoto, Takayoshi Shimura, Heiji Watanabe Performance and Reliability Improvement in SiC Power MOSFETs by Implementing AlON High-k Gate Dielectrics Performance and Reliability Improvement in SiC Power MOSFETs by Implementing AlON High-k Gate Dielectrics Performance and Reliability Improvement in SiC Power MOSFETs by Implementing AlON High-k Gate Dielectrics 2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 7.4.1-7.4.4 2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 7.4.1-7.4.4 2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 7.4.1-7.4.4 2012 英語 研究論文(国際会議プロシーディングス) 公開
Hiroki Niwa, Jun Suda, Tsunenobu Kimoto Hiroki Niwa, Jun Suda, Tsunenobu Kimoto Hiroki Niwa, Jun Suda, Tsunenobu Kimoto Fundamental study on junction termination structures for ultrahigh-voltage SiC PiN diodes Fundamental study on junction termination structures for ultrahigh-voltage SiC PiN diodes Fundamental study on junction termination structures for ultrahigh-voltage SiC PiN diodes IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai, 56-57 IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai, 56-57 IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai, 56-57 2012 英語 研究論文(国際会議プロシーディングス) 公開
Koutarou Kawahara, Jun Suda, Tsunenobu Kimoto Koutarou Kawahara, Jun Suda, Tsunenobu Kimoto Koutarou Kawahara, Jun Suda, Tsunenobu Kimoto Elimination of Deep Levels in Thick SiC Epilayers by Thermal Oxidation and Proposal of the Analytical Model Elimination of Deep Levels in Thick SiC Epilayers by Thermal Oxidation and Proposal of the Analytical Model Elimination of Deep Levels in Thick SiC Epilayers by Thermal Oxidation and Proposal of the Analytical Model SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 717-720, 241-246 SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 717-720, 241-246 SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 717-720, 241-246 2012 英語 研究論文(国際会議プロシーディングス) 公開
R. P. Devaty, Fei Yan, W. J. Choyke, A. Gali, T. Kimoto, T. Ohshima R. P. Devaty, Fei Yan, W. J. Choyke, A. Gali, T. Kimoto, T. Ohshima R. P. Devaty, Fei Yan, W. J. Choyke, A. Gali, T. Kimoto, T. Ohshima Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 717-720, 263-+ SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 717-720, 263-+ SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 717-720, 263-+ 2012 英語 研究論文(国際会議プロシーディングス) 公開
Bernd Zippelius, Alexander Glas, Heiko B. Weber, Gerhard Pensl, Tsunenobu Kimoto, Michael Krieger Bernd Zippelius, Alexander Glas, Heiko B. Weber, Gerhard Pensl, Tsunenobu Kimoto, Michael Krieger Bernd Zippelius, Alexander Glas, Heiko B. Weber, Gerhard Pensl, Tsunenobu Kimoto, Michael Krieger Z(1/2)- and EH6-Center in 4H-SiC: Not Identical Defects? Z(1/2)- and EH6-Center in 4H-SiC: Not Identical Defects? Z(1/2)- and EH6-Center in 4H-SiC: Not Identical Defects? SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 717-720, 251-+ SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 717-720, 251-+ SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 717-720, 251-+ 2012 英語 研究論文(国際会議プロシーディングス) 公開
S. Sasaki, J. Suda, T. Kimoto S. Sasaki, J. Suda, T. Kimoto S. Sasaki, J. Suda, T. Kimoto Doping-Induced Lattice Mismatch and Misorientation in 4H-SiC Crystals Doping-Induced Lattice Mismatch and Misorientation in 4H-SiC Crystals Doping-Induced Lattice Mismatch and Misorientation in 4H-SiC Crystals SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 717-720, 481-484 SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 717-720, 481-484 SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 717-720, 481-484 2012 英語 研究論文(国際会議プロシーディングス) 公開
K. Danno, H. Saitoh, A. Seki, T. Shirai, H. Suzuki, T. Bessho, Y. Kawai, T. Kimoto K. Danno, H. Saitoh, A. Seki, T. Shirai, H. Suzuki, T. Bessho, Y. Kawai, T. Kimoto K. Danno, H. Saitoh, A. Seki, T. Shirai, H. Suzuki, T. Bessho, Y. Kawai, T. Kimoto Diffusion and gettering of transition metals in 4H-SiC Diffusion and gettering of transition metals in 4H-SiC Diffusion and gettering of transition metals in 4H-SiC SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 717-720, 225-+ SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 717-720, 225-+ SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 717-720, 225-+ 2012 英語 研究論文(国際会議プロシーディングス) 公開
Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Enhanced Current Gain (&gt; 250) in 4H-SiC Bipolar Junction Transistors by A Deep-Level-Reduction Process Enhanced Current Gain (&gt; 250) in 4H-SiC Bipolar Junction Transistors by A Deep-Level-Reduction Process Enhanced Current Gain (&gt; 250) in 4H-SiC Bipolar Junction Transistors by A Deep-Level-Reduction Process SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 717-720, 1117-1122 SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 717-720, 1117-1122 SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 717-720, 1117-1122 2012 英語 研究論文(国際会議プロシーディングス) 公開
Hiroki Niwa, Gan Feng, Jun Suda, Tsunenobu Kimoto Hiroki Niwa, Gan Feng, Jun Suda, Tsunenobu Kimoto Hiroki Niwa, Gan Feng, Jun Suda, Tsunenobu Kimoto Experimental Study on Various Junction Termination Structures Applied to 15 kV 4H-SiC PiN Diodes Experimental Study on Various Junction Termination Structures Applied to 15 kV 4H-SiC PiN Diodes Experimental Study on Various Junction Termination Structures Applied to 15 kV 4H-SiC PiN Diodes SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 717-720, 973-976 SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 717-720, 973-976 SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 717-720, 973-976 2012 英語 研究論文(国際会議プロシーディングス) 公開
B. Zippelius, J. Suda, T. Kimoto B. Zippelius, J. Suda, T. Kimoto B. Zippelius, J. Suda, T. Kimoto On the Formation of Intrinsic Defects in 4H-SiC by High Temperature Annealing Steps On the Formation of Intrinsic Defects in 4H-SiC by High Temperature Annealing Steps On the Formation of Intrinsic Defects in 4H-SiC by High Temperature Annealing Steps SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 717-720, 247-250 SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 717-720, 247-250 SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 717-720, 247-250 2012 英語 研究論文(国際会議プロシーディングス) 公開
G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto Chlorine in SiC: Experiment and Theory Chlorine in SiC: Experiment and Theory Chlorine in SiC: Experiment and Theory SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 717-720, 229-232 SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 717-720, 229-232 SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 717-720, 229-232 2012 英語 研究論文(国際会議プロシーディングス) 公開
岩田 達哉, 西 佑介, 木本 恒暢 岩田 達哉, 西 佑介, 木本 恒暢 抵抗変化型メモリ用Pt/NiO/Pt素子におけるフィラメント形成領域の特定とその評価(シリコン関連材料の作製と評価) 抵抗変化型メモリ用Pt/NiO/Pt素子におけるフィラメント形成領域の特定とその評価(シリコン関連材料の作製と評価) 電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス, 111, 357, 87-92 電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス, 111, 357, 87-92 , 111, 357, 87-92 2011/12/09 日本語 公開
岩田達哉, 西佑介, 木本恒暢, 木本恒暢 岩田達哉, 西佑介, 木本恒暢, 木本恒暢 抵抗変化型メモリ用Pt/NiO/Pt素子におけるフィラメント形成領域の特定とその評価 抵抗変化型メモリ用Pt/NiO/Pt素子におけるフィラメント形成領域の特定とその評価 電子情報通信学会技術研究報告, 111, 357(SDM2011 132-148), 87-92 電子情報通信学会技術研究報告, 111, 357(SDM2011 132-148), 87-92 , 111, 357(SDM2011 132-148), 87-92 2011/12/09 日本語 公開
森誠語, 森岡直也, 須田淳, 木本恒暢 森誠語, 森岡直也, 須田淳, 木本恒暢 長方形断面Siナノワイヤの伝導帯構造の断面形状およびサイズ依存性 長方形断面Siナノワイヤの伝導帯構造の断面形状およびサイズ依存性 電子情報通信学会技術研究報告, 111, 357(SDM2011 132-148), 77-82 電子情報通信学会技術研究報告, 111, 357(SDM2011 132-148), 77-82 , 111, 357(SDM2011 132-148), 77-82 2011/12/09 日本語 公開
丹羽弘樹, FENG Gan, 須田淳, 木本恒暢 丹羽弘樹, FENG Gan, 須田淳, 木本恒暢 接合終端構造の改良による15kV級SiC PiNダイオードの実現 接合終端構造の改良による15kV級SiC PiNダイオードの実現 電子情報通信学会技術研究報告, 111, 357(SDM2011 132-148), 17-21 電子情報通信学会技術研究報告, 111, 357(SDM2011 132-148), 17-21 , 111, 357(SDM2011 132-148), 17-21 2011/12/09 日本語 公開
G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto Ab initio study of isolated chlorine defects in cubic SiC Ab initio study of isolated chlorine defects in cubic SiC Ab initio study of isolated chlorine defects in cubic SiC JOURNAL OF PHYSICS-CONDENSED MATTER, 23, 41 JOURNAL OF PHYSICS-CONDENSED MATTER, 23, 41 JOURNAL OF PHYSICS-CONDENSED MATTER, 23, 41 2011/10 英語 研究論文(学術雑誌) 公開
A. Castellazzi, T. Takuno, R. Onishi, T. Funaki, T. Kimoto, T. Hikihara A. Castellazzi, T. Takuno, R. Onishi, T. Funaki, T. Kimoto, T. Hikihara A. Castellazzi, T. Takuno, R. Onishi, T. Funaki, T. Kimoto, T. Hikihara A study of SiC Power BJT performance and robustness A study of SiC Power BJT performance and robustness A study of SiC Power BJT performance and robustness MICROELECTRONICS RELIABILITY, 51, 9-11, 1773-1777 MICROELECTRONICS RELIABILITY, 51, 9-11, 1773-1777 MICROELECTRONICS RELIABILITY, 51, 9-11, 1773-1777 2011/09 英語 研究論文(学術雑誌) 公開
Masato Noborio, Michael Grieb, Anton J. Bauer, Dethard Peters, Peter Friedrichs, Jun Suda, Tsunenobu Kimoto Masato Noborio, Michael Grieb, Anton J. Bauer, Dethard Peters, Peter Friedrichs, Jun Suda, Tsunenobu Kimoto Masato Noborio, Michael Grieb, Anton J. Bauer, Dethard Peters, Peter Friedrichs, Jun Suda, Tsunenobu Kimoto Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal-Oxide-Semiconductor Devices Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal-Oxide-Semiconductor Devices Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal-Oxide-Semiconductor Devices JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 9 JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 9 JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 9 2011/09 英語 研究論文(学術雑誌) 公開
木本 恒暢 木本 恒暢 高効率電力変換用SiCパワーデバイス 高効率電力変換用SiCパワーデバイス 應用物理, 80, 8, 673-678 應用物理, 80, 8, 673-678 , 80, 8, 673-678 2011/08/10 日本語 公開
Gan Feng, Jun Suda, Tsunenobu Kimoto Gan Feng, Jun Suda, Tsunenobu Kimoto Gan Feng, Jun Suda, Tsunenobu Kimoto Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence mapping Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence mapping Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence mapping JOURNAL OF APPLIED PHYSICS, 110, 3 JOURNAL OF APPLIED PHYSICS, 110, 3 JOURNAL OF APPLIED PHYSICS, 110, 3 2011/08 英語 研究論文(学術雑誌) 公開
Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto Effects of Heat Treatment on the Resistive Switching Characteristics of Pt/NiO/Pt Stack Structures Effects of Heat Treatment on the Resistive Switching Characteristics of Pt/NiO/Pt Stack Structures Effects of Heat Treatment on the Resistive Switching Characteristics of Pt/NiO/Pt Stack Structures JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 8 JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 8 JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 8 2011/08 英語 研究論文(学術雑誌) 公開
Shunsaku Ueta, Masahiro Horita, Tsunenobu Kimoto, Jun Suda Shunsaku Ueta, Masahiro Horita, Tsunenobu Kimoto, Jun Suda Shunsaku Ueta, Masahiro Horita, Tsunenobu Kimoto, Jun Suda Anomalously low Ga incorporation in high Al-content AlGaN grown on (11(2)over-bar0) non-polar plane by molecular beam epitaxy Anomalously low Ga incorporation in high Al-content AlGaN grown on (11(2)over-bar0) non-polar plane by molecular beam epitaxy Anomalously low Ga incorporation in high Al-content AlGaN grown on (11(2)over-bar0) non-polar plane by molecular beam epitaxy PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 208, 7, 1498-1500 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 208, 7, 1498-1500 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 208, 7, 1498-1500 2011/07 英語 研究論文(学術雑誌) 公開
Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Hiroki Miyake, Tsunenobu Kimoto, Jun Suda 4H-SiC BJTs With Record Current Gains of 257 on (0001) and 335 on (0001) 4H-SiC BJTs With Record Current Gains of 257 on (0001) and 335 on (0001) 4H-SiC BJTs With Record Current Gains of 257 on (0001) and 335 on (0001) IEEE ELECTRON DEVICE LETTERS, 32, 7, 841-843 IEEE ELECTRON DEVICE LETTERS, 32, 7, 841-843 IEEE ELECTRON DEVICE LETTERS, 32, 7, 841-843 2011/07 英語 研究論文(学術雑誌) 公開
Hiromi Kaneko, Tsunenobu Kimoto Hiromi Kaneko, Tsunenobu Kimoto Hiromi Kaneko, Tsunenobu Kimoto Formation of a semi-insulating layer in n-type 4H-SiC by electron irradiation Formation of a semi-insulating layer in n-type 4H-SiC by electron irradiation Formation of a semi-insulating layer in n-type 4H-SiC by electron irradiation APPLIED PHYSICS LETTERS, 98, 26 APPLIED PHYSICS LETTERS, 98, 26 APPLIED PHYSICS LETTERS, 98, 26 2011/06 英語 研究論文(学術雑誌) 公開
T. Hayashi, K. Asano, J. Suda, T. Kimoto T. Hayashi, K. Asano, J. Suda, T. Kimoto T. Hayashi, K. Asano, J. Suda, T. Kimoto Impacts of reduction of deep levels and surface passivation on carrier lifetimes in p-type 4H-SiC epilayers Impacts of reduction of deep levels and surface passivation on carrier lifetimes in p-type 4H-SiC epilayers Impacts of reduction of deep levels and surface passivation on carrier lifetimes in p-type 4H-SiC epilayers JOURNAL OF APPLIED PHYSICS, 109, 11 JOURNAL OF APPLIED PHYSICS, 109, 11 JOURNAL OF APPLIED PHYSICS, 109, 11 2011/06 英語 研究論文(学術雑誌) 公開
Masanobu Yoshikawa, Hirohumi Seki, Keiko Inoue, Keiko Matsuda, Yusaku Tanahashi, Hideki Sako, Yuihiro Nanen, Muneharu Kato, Tsunenobu Kimoto Masanobu Yoshikawa, Hirohumi Seki, Keiko Inoue, Keiko Matsuda, Yusaku Tanahashi, Hideki Sako, Yuihiro Nanen, Muneharu Kato, Tsunenobu Kimoto Masanobu Yoshikawa, Hirohumi Seki, Keiko Inoue, Keiko Matsuda, Yusaku Tanahashi, Hideki Sako, Yuihiro Nanen, Muneharu Kato, Tsunenobu Kimoto Characterization of Silicon Dioxide Films on a 4H-SiC Si(0001) Face by Fourier Transform Infrared (FT-IR) Spectroscopy and Cathodoluminescence Spectroscopy Characterization of Silicon Dioxide Films on a 4H-SiC Si(0001) Face by Fourier Transform Infrared (FT-IR) Spectroscopy and Cathodoluminescence Spectroscopy Characterization of Silicon Dioxide Films on a 4H-SiC Si(0001) Face by Fourier Transform Infrared (FT-IR) Spectroscopy and Cathodoluminescence Spectroscopy APPLIED SPECTROSCOPY, 65, 5, 543-548 APPLIED SPECTROSCOPY, 65, 5, 543-548 APPLIED SPECTROSCOPY, 65, 5, 543-548 2011/05 英語 研究論文(学術雑誌) 公開
Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl Silicon Carbide Silicon Carbide Silicon Carbide Silicon Carbide, 1 Silicon Carbide, 1 Silicon Carbide, 1 2011/04/28 英語 公開
Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl Preface Preface Preface Silicon Carbide, 1, xi-xiv Silicon Carbide, 1, xi-xiv Silicon Carbide, 1, xi-xiv 2011/04/28 英語 公開
Tsunenobu Kimoto, Katsunori Danno, Jun Suda Tsunenobu Kimoto, Katsunori Danno, Jun Suda Tsunenobu Kimoto, Katsunori Danno, Jun Suda Lifetime-Killing Defects in 4H-SiC Epilayers and Lifetime Control by Low-Energy Electron Irradiation Lifetime-Killing Defects in 4H-SiC Epilayers and Lifetime Control by Low-Energy Electron Irradiation Lifetime-Killing Defects in 4H-SiC Epilayers and Lifetime Control by Low-Energy Electron Irradiation Silicon Carbide, 1, 267-286 Silicon Carbide, 1, 267-286 Silicon Carbide, 1, 267-286 2011/04/28 英語 公開
Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl Silicon Carbide Silicon Carbide Silicon Carbide Silicon Carbide, 2 Silicon Carbide, 2 Silicon Carbide, 2 2011/03/28 英語 公開
B. Zippelius, S. Beljakowa, M. Krieger, G. Pensl, S. A. Reshanov, M. Noborio, T. Kimoto, V. V. Afanas'ev B. Zippelius, S. Beljakowa, M. Krieger, G. Pensl, S. A. Reshanov, M. Noborio, T. Kimoto, V. V. Afanas'ev B. Zippelius, S. Beljakowa, M. Krieger, G. Pensl, S. A. Reshanov, M. Noborio, T. Kimoto, V. V. Afanas'ev High Electron Mobility Achieved in n-Channel 4H-SiC MOSFETs Oxidized in the Presence of Nitrogen High Electron Mobility Achieved in n-Channel 4H-SiC MOSFETs Oxidized in the Presence of Nitrogen High Electron Mobility Achieved in n-Channel 4H-SiC MOSFETs Oxidized in the Presence of Nitrogen Silicon Carbide, 2, 215-233 Silicon Carbide, 2, 215-233 Silicon Carbide, 2, 215-233 2011/03/28 英語 公開
Masato Noborio, Jun Suda, Svetlana Beljakowa, Michael Krieger, Tsunenobu Kimoto Masato Noborio, Jun Suda, Svetlana Beljakowa, Michael Krieger, Tsunenobu Kimoto Masato Noborio, Jun Suda, Svetlana Beljakowa, Michael Krieger, Tsunenobu Kimoto 4H-SiC MISFETs with Nitrogen-Containing Insulators 4H-SiC MISFETs with Nitrogen-Containing Insulators 4H-SiC MISFETs with Nitrogen-Containing Insulators Silicon Carbide, 2, 235-265 Silicon Carbide, 2, 235-265 Silicon Carbide, 2, 235-265 2011/03/28 英語 公開
Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl Preface Preface Preface Silicon Carbide, 2, XI-XIV Silicon Carbide, 2, XI-XIV Silicon Carbide, 2, XI-XIV 2011/03/28 英語 公開
Gerhard Pensl, Svetlana Beljakowa, Thomas Frank, Kunyuan Gao, Florian Speck, Thomas Seyller, Lothar Ley, Florin Ciobanu, Valery Afanas'ev, Andre Stesmans, Tsunenobu Kimoto, Adolf Schöner Gerhard Pensl, Svetlana Beljakowa, Thomas Frank, Kunyuan Gao, Florian Speck, Thomas Seyller, Lothar Ley, Florin Ciobanu, Valery Afanas'ev, Andre Stesmans, Tsunenobu Kimoto, Adolf Schöner Gerhard Pensl, Svetlana Beljakowa, Thomas Frank, Kunyuan Gao, Florian Speck, Thomas Seyller, Lothar Ley, Florin Ciobanu, Valery Afanas'ev, Andre Stesmans, Tsunenobu Kimoto, Adolf Schöner Alternative Techniques to Reduce Interface Traps in n-Type 4H-SiC MOS Capacitors Alternative Techniques to Reduce Interface Traps in n-Type 4H-SiC MOS Capacitors Alternative Techniques to Reduce Interface Traps in n-Type 4H-SiC MOS Capacitors Silicon Carbide, 2, 193-214 Silicon Carbide, 2, 193-214 Silicon Carbide, 2, 193-214 2011/03/28 英語 公開
G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto Structural stability and electronic properties of SiC nanocones: First-principles calculations and symmetry considerations Structural stability and electronic properties of SiC nanocones: First-principles calculations and symmetry considerations Structural stability and electronic properties of SiC nanocones: First-principles calculations and symmetry considerations APPLIED PHYSICS LETTERS, 98, 12 APPLIED PHYSICS LETTERS, 98, 12 APPLIED PHYSICS LETTERS, 98, 12 2011/03 英語 研究論文(学術雑誌) 公開
Naoya Morioka, Hironori Yoshioka, Jun Suda, Tsunenobu Kimoto Naoya Morioka, Hironori Yoshioka, Jun Suda, Tsunenobu Kimoto Naoya Morioka, Hironori Yoshioka, Jun Suda, Tsunenobu Kimoto Quantum-confinement effect on holes in silicon nanowires: Relationship between wave function and band structure Quantum-confinement effect on holes in silicon nanowires: Relationship between wave function and band structure Quantum-confinement effect on holes in silicon nanowires: Relationship between wave function and band structure JOURNAL OF APPLIED PHYSICS, 109, 6 JOURNAL OF APPLIED PHYSICS, 109, 6 JOURNAL OF APPLIED PHYSICS, 109, 6 2011/03 英語 研究論文(学術雑誌) 公開
Hironori Yoshioka, Naoya Morioka, Jun Suda, Tsunenobu Kimoto Hironori Yoshioka, Naoya Morioka, Jun Suda, Tsunenobu Kimoto Hironori Yoshioka, Naoya Morioka, Jun Suda, Tsunenobu Kimoto Bandgap shift by quantum confinement effect in < 100 > Si-nanowires derived from threshold-voltage shift of fabricated metal-oxide-semiconductor field effect transistors and theoretical calculations Bandgap shift by quantum confinement effect in < 100 > Si-nanowires derived from threshold-voltage shift of fabricated metal-oxide-semiconductor field effect transistors and theoretical calculations Bandgap shift by quantum confinement effect in < 100 > Si-nanowires derived from threshold-voltage shift of fabricated metal-oxide-semiconductor field effect transistors and theoretical calculations JOURNAL OF APPLIED PHYSICS, 109, 6 JOURNAL OF APPLIED PHYSICS, 109, 6 JOURNAL OF APPLIED PHYSICS, 109, 6 2011/03 英語 研究論文(学術雑誌) 公開
Jun Suda, Haruki Shoji, Tsunenobu Kimoto Jun Suda, Haruki Shoji, Tsunenobu Kimoto Jun Suda, Haruki Shoji, Tsunenobu Kimoto Origin of Etch Hillocks Formed on On-Axis SiC(000(1)over-bar) Surfaces by Molten KOH Etching Origin of Etch Hillocks Formed on On-Axis SiC(000(1)over-bar) Surfaces by Molten KOH Etching Origin of Etch Hillocks Formed on On-Axis SiC(000(1)over-bar) Surfaces by Molten KOH Etching JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 3 JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 3 JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 3 2011/03 英語 研究論文(学術雑誌) 公開
Masashi Kato, Hidenori Ono, Masaya Ichimura, Gan Feng, Tsunenobu Kimoto Masashi Kato, Hidenori Ono, Masaya Ichimura, Gan Feng, Tsunenobu Kimoto Masashi Kato, Hidenori Ono, Masaya Ichimura, Gan Feng, Tsunenobu Kimoto Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 3 JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 3 JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 3 2011/03 英語 研究論文(学術雑誌) 公開
Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Improvement of Current Gain in 4H-SiC BJTs by Surface Passivation With Deposited Oxides Nitrided in N2O or NO Improvement of Current Gain in 4H-SiC BJTs by Surface Passivation With Deposited Oxides Nitrided in N2O or NO Improvement of Current Gain in 4H-SiC BJTs by Surface Passivation With Deposited Oxides Nitrided in N2O or NO IEEE ELECTRON DEVICE LETTERS, 32, 3, 285-287 IEEE ELECTRON DEVICE LETTERS, 32, 3, 285-287 IEEE ELECTRON DEVICE LETTERS, 32, 3, 285-287 2011/03 英語 研究論文(学術雑誌) 公開
G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto The effects of displacement threshold irradiation energy on deep levels in p-type 6H-SiC The effects of displacement threshold irradiation energy on deep levels in p-type 6H-SiC The effects of displacement threshold irradiation energy on deep levels in p-type 6H-SiC JOURNAL OF PHYSICS-CONDENSED MATTER, 23, 6 JOURNAL OF PHYSICS-CONDENSED MATTER, 23, 6 JOURNAL OF PHYSICS-CONDENSED MATTER, 23, 6 2011/02 英語 研究論文(学術雑誌) 公開
Hironori Okumura, Tsunenobu Kimoto, Jun Suda Hironori Okumura, Tsunenobu Kimoto, Jun Suda Hironori Okumura, Tsunenobu Kimoto, Jun Suda Reduction of Threading Dislocation Density in 2H-AlN Grown on 6H-SiC(0001) by Minimizing Unintentional Active-Nitrogen Exposure before Growth Reduction of Threading Dislocation Density in 2H-AlN Grown on 6H-SiC(0001) by Minimizing Unintentional Active-Nitrogen Exposure before Growth Reduction of Threading Dislocation Density in 2H-AlN Grown on 6H-SiC(0001) by Minimizing Unintentional Active-Nitrogen Exposure before Growth APPLIED PHYSICS EXPRESS, 4, 2 APPLIED PHYSICS EXPRESS, 4, 2 APPLIED PHYSICS EXPRESS, 4, 2 2011/02 英語 研究論文(学術雑誌) 公開
木本 恒暢, 須田 淳 木本 恒暢, 須田 淳 Tsunenobu Kimoto, Jun Suda 高耐圧パワーデバイス応用を目指したSiCのエピタキシャル成長と欠陥制御 高耐圧パワーデバイス応用を目指したSiCのエピタキシャル成長と欠陥制御 Epitaxial growth and defect control of SiC for high-voltage power devices 真空, 54, 6, 362-368 真空, 54, 6, 362-368 Journal of the Vacuum Society of Japan, 54, 6, 362-368 2011 日本語 公開
Massimo Camarda, Andrea Canino, Antonino La Magna, Francesco La Via, G. Feng, T. Kimoto, M. Aoki, H. Kawanowa Massimo Camarda, Andrea Canino, Antonino La Magna, Francesco La Via, G. Feng, T. Kimoto, M. Aoki, H. Kawanowa Massimo Camarda, Andrea Canino, Antonino La Magna, Francesco La Via, G. Feng, T. Kimoto, M. Aoki, H. Kawanowa Structural and electronic characterization of (2,3(3)) bar-shaped stacking fault in 4H-SiC epitaxial layers Structural and electronic characterization of (2,3(3)) bar-shaped stacking fault in 4H-SiC epitaxial layers Structural and electronic characterization of (2,3(3)) bar-shaped stacking fault in 4H-SiC epitaxial layers APPLIED PHYSICS LETTERS, 98, 5 APPLIED PHYSICS LETTERS, 98, 5 APPLIED PHYSICS LETTERS, 98, 5 2011/01 英語 研究論文(学術雑誌) 公開
T. Hayashi, K. Asano, J. Suda, T. Kimoto T. Hayashi, K. Asano, J. Suda, T. Kimoto T. Hayashi, K. Asano, J. Suda, T. Kimoto Temperature and injection level dependencies and impact of thermal oxidation on carrier lifetimes in p-type and n-type 4H-SiC epilayers Temperature and injection level dependencies and impact of thermal oxidation on carrier lifetimes in p-type and n-type 4H-SiC epilayers Temperature and injection level dependencies and impact of thermal oxidation on carrier lifetimes in p-type and n-type 4H-SiC epilayers JOURNAL OF APPLIED PHYSICS, 109, 1 JOURNAL OF APPLIED PHYSICS, 109, 1 JOURNAL OF APPLIED PHYSICS, 109, 1 2011/01 英語 研究論文(学術雑誌) 公開
S. Sasaki, K. Kawahara, G. Feng, G. Alfieri, T. Kimoto S. Sasaki, K. Kawahara, G. Feng, G. Alfieri, T. Kimoto S. Sasaki, K. Kawahara, G. Feng, G. Alfieri, T. Kimoto Major deep levels with the same microstructures observed in n-type 4H-SiC and 6H-SiC Major deep levels with the same microstructures observed in n-type 4H-SiC and 6H-SiC Major deep levels with the same microstructures observed in n-type 4H-SiC and 6H-SiC JOURNAL OF APPLIED PHYSICS, 109, 1 JOURNAL OF APPLIED PHYSICS, 109, 1 JOURNAL OF APPLIED PHYSICS, 109, 1 2011/01 英語 研究論文(学術雑誌) 公開
Yusuke Nishi, Tatsuya Iwata, Tsunenobu Kimoto Yusuke Nishi, Tatsuya Iwata, Tsunenobu Kimoto Yusuke Nishi, Tatsuya Iwata, Tsunenobu Kimoto Correlation between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory Correlation between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory Correlation between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 1 JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 1 JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 1 2011/01 英語 研究論文(学術雑誌) 公開
Tsunenobu Kimoto, Jun Suda Tsunenobu Kimoto, Jun Suda Tsunenobu Kimoto, Jun Suda Epitaxial growth and defect control of SiC for high-voltage power devices Epitaxial growth and defect control of SiC for high-voltage power devices Epitaxial growth and defect control of SiC for high-voltage power devices Journal of the Vacuum Society of Japan, 54, 6, 362-368 Journal of the Vacuum Society of Japan, 54, 6, 362-368 Journal of the Vacuum Society of Japan, 54, 6, 362-368 2011 日本語 公開
Atsushi Koizumi, Naoya Iwamoto, Shinobu Onoda, Takeshi Ohshima, Tsunenobu Kimoto, Kazuo Uchida, Shinji Nozaki Atsushi Koizumi, Naoya Iwamoto, Shinobu Onoda, Takeshi Ohshima, Tsunenobu Kimoto, Kazuo Uchida, Shinji Nozaki Atsushi Koizumi, Naoya Iwamoto, Shinobu Onoda, Takeshi Ohshima, Tsunenobu Kimoto, Kazuo Uchida, Shinji Nozaki Compensation-Dependent Carrier Transport of Al-Doped p-Type 4H-SiC Compensation-Dependent Carrier Transport of Al-Doped p-Type 4H-SiC Compensation-Dependent Carrier Transport of Al-Doped p-Type 4H-SiC SILICON CARBIDE AND RELATED MATERIALS 2010, 679-680, 201-+ SILICON CARBIDE AND RELATED MATERIALS 2010, 679-680, 201-+ SILICON CARBIDE AND RELATED MATERIALS 2010, 679-680, 201-+ 2011 英語 研究論文(国際会議プロシーディングス) 公開
Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Improved Current Gain in 4H-SiC BJTs Passivated with Deposited Oxides Followed by Nitridation Improved Current Gain in 4H-SiC BJTs Passivated with Deposited Oxides Followed by Nitridation Improved Current Gain in 4H-SiC BJTs Passivated with Deposited Oxides Followed by Nitridation SILICON CARBIDE AND RELATED MATERIALS 2010, 679-680, 698-701 SILICON CARBIDE AND RELATED MATERIALS 2010, 679-680, 698-701 SILICON CARBIDE AND RELATED MATERIALS 2010, 679-680, 698-701 2011 英語 研究論文(国際会議プロシーディングス) 公開
Muneharu Kato, Yuichiro Nanen, Jun Suda, Tsunenobu Kimoto Muneharu Kato, Yuichiro Nanen, Jun Suda, Tsunenobu Kimoto Muneharu Kato, Yuichiro Nanen, Jun Suda, Tsunenobu Kimoto Improved Characteristics of SiC MOSFETs by Post-Oxidation Annealing in Ar at High Temperature Improved Characteristics of SiC MOSFETs by Post-Oxidation Annealing in Ar at High Temperature Improved Characteristics of SiC MOSFETs by Post-Oxidation Annealing in Ar at High Temperature SILICON CARBIDE AND RELATED MATERIALS 2010, 679-680, 445-448 SILICON CARBIDE AND RELATED MATERIALS 2010, 679-680, 445-448 SILICON CARBIDE AND RELATED MATERIALS 2010, 679-680, 445-448 2011 英語 研究論文(国際会議プロシーディングス) 公開
Gan Feng, Jun Suda, Tsunenobu Kimoto Gan Feng, Jun Suda, Tsunenobu Kimoto Gan Feng, Jun Suda, Tsunenobu Kimoto Impact of carrier lifetimes on non-destructive mapping of dislocations in 4H-SiC epilayers Impact of carrier lifetimes on non-destructive mapping of dislocations in 4H-SiC epilayers Impact of carrier lifetimes on non-destructive mapping of dislocations in 4H-SiC epilayers SILICON CARBIDE AND RELATED MATERIALS 2010, 679-680, 302-305 SILICON CARBIDE AND RELATED MATERIALS 2010, 679-680, 302-305 SILICON CARBIDE AND RELATED MATERIALS 2010, 679-680, 302-305 2011 英語 研究論文(国際会議プロシーディングス) 公開
Giovanni Alfieri, Tsunenobu Kimoto Giovanni Alfieri, Tsunenobu Kimoto Giovanni Alfieri, Tsunenobu Kimoto Electrically active defects in electron irradiated p-type 6H-SiC Electrically active defects in electron irradiated p-type 6H-SiC Electrically active defects in electron irradiated p-type 6H-SiC SILICON CARBIDE AND RELATED MATERIALS 2010, 679-680, 253-+ SILICON CARBIDE AND RELATED MATERIALS 2010, 679-680, 253-+ SILICON CARBIDE AND RELATED MATERIALS 2010, 679-680, 253-+ 2011 英語 研究論文(国際会議プロシーディングス) 公開
Yusuke Nishi, Tatsuya Iwata, Tsunenobu Kimoto Yusuke Nishi, Tatsuya Iwata, Tsunenobu Kimoto Yusuke Nishi, Tatsuya Iwata, Tsunenobu Kimoto Correlation between oxygen composition and electrical properties in NiO thin films for resistive random access memory Correlation between oxygen composition and electrical properties in NiO thin films for resistive random access memory Correlation between oxygen composition and electrical properties in NiO thin films for resistive random access memory Materials Research Society Symposium Proceedings, 1250, 209-214 Materials Research Society Symposium Proceedings, 1250, 209-214 Materials Research Society Symposium Proceedings, 1250, 209-214 2010/12/24 研究論文(国際会議プロシーディングス) 公開
Tsunenobu Kimoto, Toru Hiyoshi, Toshihiko Hayashi, Jun Suda Tsunenobu Kimoto, Toru Hiyoshi, Toshihiko Hayashi, Jun Suda Tsunenobu Kimoto, Toru Hiyoshi, Toshihiko Hayashi, Jun Suda Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H-SiC epilayers Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H-SiC epilayers Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H-SiC epilayers JOURNAL OF APPLIED PHYSICS, 108, 8 JOURNAL OF APPLIED PHYSICS, 108, 8 JOURNAL OF APPLIED PHYSICS, 108, 8 2010/10 英語 研究論文(学術雑誌) 公開
Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Demonstration of Common-Emitter Operation in AlGaN/SiC Heterojunction Bipolar Transistors Demonstration of Common-Emitter Operation in AlGaN/SiC Heterojunction Bipolar Transistors Demonstration of Common-Emitter Operation in AlGaN/SiC Heterojunction Bipolar Transistors IEEE ELECTRON DEVICE LETTERS, 31, 9, 942-944 IEEE ELECTRON DEVICE LETTERS, 31, 9, 942-944 IEEE ELECTRON DEVICE LETTERS, 31, 9, 942-944 2010/09 英語 研究論文(学術雑誌) 公開
Koutarou Kawahara, Jun Suda, Gerhard Pensl, Tsunenobu Kimoto Koutarou Kawahara, Jun Suda, Gerhard Pensl, Tsunenobu Kimoto Koutarou Kawahara, Jun Suda, Gerhard Pensl, Tsunenobu Kimoto Reduction of deep levels generated by ion implantation into n- and p-type 4H-SiC Reduction of deep levels generated by ion implantation into n- and p-type 4H-SiC Reduction of deep levels generated by ion implantation into n- and p-type 4H-SiC JOURNAL OF APPLIED PHYSICS, 108, 3 JOURNAL OF APPLIED PHYSICS, 108, 3 JOURNAL OF APPLIED PHYSICS, 108, 3 2010/08 英語 研究論文(学術雑誌) 公開
Gan Feng, Jun Suda, Tsunenobu Kimoto Gan Feng, Jun Suda, Tsunenobu Kimoto Gan Feng, Jun Suda, Tsunenobu Kimoto Sources of Epitaxial Growth-Induced Stacking Faults in 4H-SiC Sources of Epitaxial Growth-Induced Stacking Faults in 4H-SiC Sources of Epitaxial Growth-Induced Stacking Faults in 4H-SiC JOURNAL OF ELECTRONIC MATERIALS, 39, 8, 1166-1169 JOURNAL OF ELECTRONIC MATERIALS, 39, 8, 1166-1169 JOURNAL OF ELECTRONIC MATERIALS, 39, 8, 1166-1169 2010/08 英語 研究論文(学術雑誌) 公開
G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto Engineering the band gap of SiC nanotubes with a transverse electric field Engineering the band gap of SiC nanotubes with a transverse electric field Engineering the band gap of SiC nanotubes with a transverse electric field APPLIED PHYSICS LETTERS, 97, 4 APPLIED PHYSICS LETTERS, 97, 4 APPLIED PHYSICS LETTERS, 97, 4 2010/07 英語 研究論文(学術雑誌) 公開
Koutarou Kawahara, Michael Krieger, Jun Suda, Tsunenobu Kimoto Koutarou Kawahara, Michael Krieger, Jun Suda, Tsunenobu Kimoto Koutarou Kawahara, Michael Krieger, Jun Suda, Tsunenobu Kimoto Deep levels induced by reactive ion etching in n- and p-type 4H-SiC Deep levels induced by reactive ion etching in n- and p-type 4H-SiC Deep levels induced by reactive ion etching in n- and p-type 4H-SiC JOURNAL OF APPLIED PHYSICS, 108, 2 JOURNAL OF APPLIED PHYSICS, 108, 2 JOURNAL OF APPLIED PHYSICS, 108, 2 2010/07 英語 研究論文(学術雑誌) 公開
Hironori Okumura, Tsunenobu Kimoto, Jun Suda Hironori Okumura, Tsunenobu Kimoto, Jun Suda Hironori Okumura, Tsunenobu Kimoto, Jun Suda Enhancement of initial layer-by-layer growth and reduction of threading dislocation density by optimized Ga pre-irradiation in molecular-beam epitaxy of 2H-AlN on 6H-SiC (0001) Enhancement of initial layer-by-layer growth and reduction of threading dislocation density by optimized Ga pre-irradiation in molecular-beam epitaxy of 2H-AlN on 6H-SiC (0001) Enhancement of initial layer-by-layer growth and reduction of threading dislocation density by optimized Ga pre-irradiation in molecular-beam epitaxy of 2H-AlN on 6H-SiC (0001) PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 7, 7-8, 2094-2096 PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 7, 7-8, 2094-2096 PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 7, 7-8, 2094-2096 2010 英語 研究論文(国際会議プロシーディングス) 公開
S. Beljakowa, S. A. Reshanov, B. Zippelius, M. Krieger, G. Pensl, K. Danno, T. Kimoto, S. Onoda, T. Ohshima, Fei Yan, R. P. Devaty, W. J. Choyke S. Beljakowa, S. A. Reshanov, B. Zippelius, M. Krieger, G. Pensl, K. Danno, T. Kimoto, S. Onoda, T. Ohshima, Fei Yan, R. P. Devaty, W. J. Choyke S. Beljakowa, S. A. Reshanov, B. Zippelius, M. Krieger, G. Pensl, K. Danno, T. Kimoto, S. Onoda, T. Ohshima, Fei Yan, R. P. Devaty, W. J. Choyke Shallow defects observed in as-grown and electron-irradiated or He+-implanted Al-doped 4H-SiC epilayers Shallow defects observed in as-grown and electron-irradiated or He+-implanted Al-doped 4H-SiC epilayers Shallow defects observed in as-grown and electron-irradiated or He+-implanted Al-doped 4H-SiC epilayers SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 427-+ SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 427-+ SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 427-+ 2010 英語 研究論文(国際会議プロシーディングス) 公開
G. Alfieri, T. Kimoto, G. Pensl G. Alfieri, T. Kimoto, G. Pensl G. Alfieri, T. Kimoto, G. Pensl Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 455-+ SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 455-+ SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 455-+ 2010 英語 研究論文(国際会議プロシーディングス) 公開
F. Yan, R. P. Devaty, W. J. Choyke, T. Kimoto, T. Ohshima, G. Pensl, A. Gali F. Yan, R. P. Devaty, W. J. Choyke, T. Kimoto, T. Ohshima, G. Pensl, A. Gali F. Yan, R. P. Devaty, W. J. Choyke, T. Kimoto, T. Ohshima, G. Pensl, A. Gali New lines and issues associated with deep defect spectra in electron, proton and He-4 ion irradiated 4H SiC New lines and issues associated with deep defect spectra in electron, proton and He-4 ion irradiated 4H SiC New lines and issues associated with deep defect spectra in electron, proton and He-4 ion irradiated 4H SiC SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 411-+ SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 411-+ SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 411-+ 2010 英語 研究論文(国際会議プロシーディングス) 公開
M. Weidner, L. Trapaidze, G. Pensl, S. A. Reshanov, A. Schoener, H. Itoh, T. Ohshima, T. Kimoto M. Weidner, L. Trapaidze, G. Pensl, S. A. Reshanov, A. Schoener, H. Itoh, T. Ohshima, T. Kimoto M. Weidner, L. Trapaidze, G. Pensl, S. A. Reshanov, A. Schoener, H. Itoh, T. Ohshima, T. Kimoto Deep Defects in 3C-SiC Generated by H+- and He+-Implantation or by Irradiation with High-Energy Electrons Deep Defects in 3C-SiC Generated by H+- and He+-Implantation or by Irradiation with High-Energy Electrons Deep Defects in 3C-SiC Generated by H+- and He+-Implantation or by Irradiation with High-Energy Electrons SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 439-+ SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 439-+ SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 439-+ 2010 英語 研究論文(国際会議プロシーディングス) 公開
F. Yan, R. P. Devaty, W. J. Choyke, K. Danno, G. Alfieri, T. Kimoto, S. Onoda, T. Ohshima, S. A. Reshanov, S. Beljakowa, B. Zippelius, G. Pensl F. Yan, R. P. Devaty, W. J. Choyke, K. Danno, G. Alfieri, T. Kimoto, S. Onoda, T. Ohshima, S. A. Reshanov, S. Beljakowa, B. Zippelius, G. Pensl F. Yan, R. P. Devaty, W. J. Choyke, K. Danno, G. Alfieri, T. Kimoto, S. Onoda, T. Ohshima, S. A. Reshanov, S. Beljakowa, B. Zippelius, G. Pensl Thermal histories of defect centers as measured by low temperature photoluminescence in n- and p-type 4H SiC epilayers generated by irradiation with 170 keV or 1 MeV electrons Thermal histories of defect centers as measured by low temperature photoluminescence in n- and p-type 4H SiC epilayers generated by irradiation with 170 keV or 1 MeV electrons Thermal histories of defect centers as measured by low temperature photoluminescence in n- and p-type 4H SiC epilayers generated by irradiation with 170 keV or 1 MeV electrons SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 419-+ SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 419-+ SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 419-+ 2010 英語 研究論文(国際会議プロシーディングス) 公開
G. Feng, J. Suda, T. Kimoto G. Feng, J. Suda, T. Kimoto G. Feng, J. Suda, T. Kimoto In-grown stacking faults identified in 4H-SiC epilayers grown at high growth rate In-grown stacking faults identified in 4H-SiC epilayers grown at high growth rate In-grown stacking faults identified in 4H-SiC epilayers grown at high growth rate SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 287-290 SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 287-290 SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 287-290 2010 英語 研究論文(国際会議プロシーディングス) 公開
Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Hiroki Miyake, Tsunenobu Kimoto, Jun Suda SiC Heterojunction Bipolar Transistors with AlN/GaN Short-Period Superlattice Widegap Emitter SiC Heterojunction Bipolar Transistors with AlN/GaN Short-Period Superlattice Widegap Emitter SiC Heterojunction Bipolar Transistors with AlN/GaN Short-Period Superlattice Widegap Emitter SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 1029-1032 SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 1029-1032 SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 1029-1032 2010 英語 研究論文(国際会議プロシーディングス) 公開
M. Grieb, M. Noborio, D. Peters, A. J. Bauer, P. Friedrichs, T. Kimoto, H. Ryssel M. Grieb, M. Noborio, D. Peters, A. J. Bauer, P. Friedrichs, T. Kimoto, H. Ryssel M. Grieb, M. Noborio, D. Peters, A. J. Bauer, P. Friedrichs, T. Kimoto, H. Ryssel Comparison of the threshold-voltage stability of SiC MOSFETs with thermally grown and deposited gate oxides Comparison of the threshold-voltage stability of SiC MOSFETs with thermally grown and deposited gate oxides Comparison of the threshold-voltage stability of SiC MOSFETs with thermally grown and deposited gate oxides SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 681-+ SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 681-+ SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 681-+ 2010 英語 研究論文(国際会議プロシーディングス) 公開
K. Kawahara, G. Alfieri, M. Krieger, T. Kimoto K. Kawahara, G. Alfieri, M. Krieger, T. Kimoto K. Kawahara, G. Alfieri, M. Krieger, T. Kimoto Reactive-Ion-Etching Induced Deep Levels Observed in n-type and p-type 4H-SiC Reactive-Ion-Etching Induced Deep Levels Observed in n-type and p-type 4H-SiC Reactive-Ion-Etching Induced Deep Levels Observed in n-type and p-type 4H-SiC SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 759-+ SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 759-+ SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 759-+ 2010 英語 研究論文(国際会議プロシーディングス) 公開
T. Kimoto, G. Feng, T. Hiyoshi, K. Kawahara, M. Noborio, J. Suda T. Kimoto, G. Feng, T. Hiyoshi, K. Kawahara, M. Noborio, J. Suda T. Kimoto, G. Feng, T. Hiyoshi, K. Kawahara, M. Noborio, J. Suda Defect Control in Growth and Processing of 4H-SiC for Power Device Applications Defect Control in Growth and Processing of 4H-SiC for Power Device Applications Defect Control in Growth and Processing of 4H-SiC for Power Device Applications SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 645-650 SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 645-650 SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 645-650 2010 英語 研究論文(国際会議プロシーディングス) 公開
Masato Noborio, Michael Grieb, Anton J. Bauer, Dethard Peters, Peter Friedrichs, Jun Suda, Tsunenobu Kimoto Masato Noborio, Michael Grieb, Anton J. Bauer, Dethard Peters, Peter Friedrichs, Jun Suda, Tsunenobu Kimoto Masato Noborio, Michael Grieb, Anton J. Bauer, Dethard Peters, Peter Friedrichs, Jun Suda, Tsunenobu Kimoto Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 825-+ SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 825-+ SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 825-+ 2010 英語 研究論文(国際会議プロシーディングス) 公開
Michael Krieger, Svetlana Beljakowa, Bernd Zippelius, Valeri V. Afanas'ev, Anton J. Bauer, Yuichiro Nanen, Tsunenobu Kimoto, Gerhard Pensl Michael Krieger, Svetlana Beljakowa, Bernd Zippelius, Valeri V. Afanas'ev, Anton J. Bauer, Yuichiro Nanen, Tsunenobu Kimoto, Gerhard Pensl Michael Krieger, Svetlana Beljakowa, Bernd Zippelius, Valeri V. Afanas'ev, Anton J. Bauer, Yuichiro Nanen, Tsunenobu Kimoto, Gerhard Pensl Detection and Electrical Characterization of Defects at the SiO2/4H-SiC: Interface Detection and Electrical Characterization of Defects at the SiO2/4H-SiC: Interface Detection and Electrical Characterization of Defects at the SiO2/4H-SiC: Interface SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 463-+ SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 463-+ SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 463-+ 2010 英語 研究論文(国際会議プロシーディングス) 公開
Y. Nanen, B. Zippelius, S. Beljakowa, L. Trapaidze, M. Krieger, T. Kimoto, G. Pensl Y. Nanen, B. Zippelius, S. Beljakowa, L. Trapaidze, M. Krieger, T. Kimoto, G. Pensl Y. Nanen, B. Zippelius, S. Beljakowa, L. Trapaidze, M. Krieger, T. Kimoto, G. Pensl Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 487-+ SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 487-+ SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 487-+ 2010 英語 研究論文(国際会議プロシーディングス) 公開
K. Kawahara, G. Alfieri, T. Hiyoshi, G. Pensl, T. Kimoto K. Kawahara, G. Alfieri, T. Hiyoshi, G. Pensl, T. Kimoto K. Kawahara, G. Alfieri, T. Hiyoshi, G. Pensl, T. Kimoto Effects of Thermal Oxidation on Deep Levels Generated by Ion Implantation into n-type and p-type 4H-SiC Effects of Thermal Oxidation on Deep Levels Generated by Ion Implantation into n-type and p-type 4H-SiC Effects of Thermal Oxidation on Deep Levels Generated by Ion Implantation into n-type and p-type 4H-SiC SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 651-654 SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 651-654 SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 651-654 2010 英語 研究論文(国際会議プロシーディングス) 公開
S. A. Reshanov, S. Beljakowa, B. Zippelius, G. Pensl, K. Danno, G. Alfieri, T. Kimoto, S. Onoda, T. Ohshima, Fei Yan, R. P. Devaty, W. J. Choyke S. A. Reshanov, S. Beljakowa, B. Zippelius, G. Pensl, K. Danno, G. Alfieri, T. Kimoto, S. Onoda, T. Ohshima, Fei Yan, R. P. Devaty, W. J. Choyke S. A. Reshanov, S. Beljakowa, B. Zippelius, G. Pensl, K. Danno, G. Alfieri, T. Kimoto, S. Onoda, T. Ohshima, Fei Yan, R. P. Devaty, W. J. Choyke Thermal Stability of Defect Centers in n- and p-type 4H-SiC Epilayers Generated by Irradiation with High-energy Electrons Thermal Stability of Defect Centers in n- and p-type 4H-SiC Epilayers Generated by Irradiation with High-energy Electrons Thermal Stability of Defect Centers in n- and p-type 4H-SiC Epilayers Generated by Irradiation with High-energy Electrons SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 423-+ SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 423-+ SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 423-+ 2010 英語 研究論文(国際会議プロシーディングス) 公開
T. Hayashi, K. Asano, J. Suda, T. Kimoto T. Hayashi, K. Asano, J. Suda, T. Kimoto T. Hayashi, K. Asano, J. Suda, T. Kimoto Temperature and Injection Level Dependencies of Carrier Lifetimes in p-type and n-type 4H-SiC Epilayers Temperature and Injection Level Dependencies of Carrier Lifetimes in p-type and n-type 4H-SiC Epilayers Temperature and Injection Level Dependencies of Carrier Lifetimes in p-type and n-type 4H-SiC Epilayers SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 199-+ SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 199-+ SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 199-+ 2010 英語 研究論文(国際会議プロシーディングス) 公開
Tsunenobu Kimoto, Yuichiro Nanen, Toshihiko Hayashi, Jun Suda Tsunenobu Kimoto, Yuichiro Nanen, Toshihiko Hayashi, Jun Suda Tsunenobu Kimoto, Yuichiro Nanen, Toshihiko Hayashi, Jun Suda Enhancement of Carrier Lifetimes in n-Type 4H-SiC Epitaxial Layers by Improved Surface Passivation Enhancement of Carrier Lifetimes in n-Type 4H-SiC Epitaxial Layers by Improved Surface Passivation Enhancement of Carrier Lifetimes in n-Type 4H-SiC Epitaxial Layers by Improved Surface Passivation APPLIED PHYSICS EXPRESS, 3, 12 APPLIED PHYSICS EXPRESS, 3, 12 APPLIED PHYSICS EXPRESS, 3, 12 2010 英語 研究論文(学術雑誌) 公開
Jun Suda, Kazuki Yamaji, Yuichirou Hayashi, Tsunenobu Kimoto, Kenji Shimoyama, Hideo Namita, Satoru Nagao Jun Suda, Kazuki Yamaji, Yuichirou Hayashi, Tsunenobu Kimoto, Kenji Shimoyama, Hideo Namita, Satoru Nagao Jun Suda, Kazuki Yamaji, Yuichirou Hayashi, Tsunenobu Kimoto, Kenji Shimoyama, Hideo Namita, Satoru Nagao Nearly Ideal Current-Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates Nearly Ideal Current-Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates Nearly Ideal Current-Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates APPLIED PHYSICS EXPRESS, 3, 10 APPLIED PHYSICS EXPRESS, 3, 10 APPLIED PHYSICS EXPRESS, 3, 10 2010 英語 研究論文(学術雑誌) 公開
Gan Feng, Jun Suda, Tsunenobu Kimoto Gan Feng, Jun Suda, Tsunenobu Kimoto Gan Feng, Jun Suda, Tsunenobu Kimoto Nondestructive Visualization of Individual Dislocations in 4H-SiC Epilayers by Micro Photoluminescence Mapping Nondestructive Visualization of Individual Dislocations in 4H-SiC Epilayers by Micro Photoluminescence Mapping Nondestructive Visualization of Individual Dislocations in 4H-SiC Epilayers by Micro Photoluminescence Mapping JAPANESE JOURNAL OF APPLIED PHYSICS, 49, 9 JAPANESE JOURNAL OF APPLIED PHYSICS, 49, 9 JAPANESE JOURNAL OF APPLIED PHYSICS, 49, 9 2010 英語 研究論文(学術雑誌) 公開
Masahiro Horita, Tsunenobu Kimoto, Jun Suda Masahiro Horita, Tsunenobu Kimoto, Jun Suda Masahiro Horita, Tsunenobu Kimoto, Jun Suda Nonpolar 4H-Polytype AlN/AlGaN Multiple Quantum Well Structure Grown on 4H-SiCd(1(1)over-bar00) Nonpolar 4H-Polytype AlN/AlGaN Multiple Quantum Well Structure Grown on 4H-SiCd(1(1)over-bar00) Nonpolar 4H-Polytype AlN/AlGaN Multiple Quantum Well Structure Grown on 4H-SiCd(1(1)over-bar00) APPLIED PHYSICS EXPRESS, 3, 5 APPLIED PHYSICS EXPRESS, 3, 5 APPLIED PHYSICS EXPRESS, 3, 5 2010 英語 研究論文(学術雑誌) 公開
Masato Noborio, Jun Suda, Tsunenobu Kimoto Masato Noborio, Jun Suda, Tsunenobu Kimoto Masato Noborio, Jun Suda, Tsunenobu Kimoto Influence of Effective Fixed Charges on Short-Channel Effects in SiC Metal-Oxide-Semiconductor Field-Effect Transistors Influence of Effective Fixed Charges on Short-Channel Effects in SiC Metal-Oxide-Semiconductor Field-Effect Transistors Influence of Effective Fixed Charges on Short-Channel Effects in SiC Metal-Oxide-Semiconductor Field-Effect Transistors JAPANESE JOURNAL OF APPLIED PHYSICS, 49, 2 JAPANESE JOURNAL OF APPLIED PHYSICS, 49, 2 JAPANESE JOURNAL OF APPLIED PHYSICS, 49, 2 2010 英語 研究論文(学術雑誌) 公開
Gan Feng, Jun Suda, Tsunenobu Kimoto Gan Feng, Jun Suda, Tsunenobu Kimoto Gan Feng, Jun Suda, Tsunenobu Kimoto Characterization of major in-grown stacking faults in 4H-SiC epilayers Characterization of major in-grown stacking faults in 4H-SiC epilayers Characterization of major in-grown stacking faults in 4H-SiC epilayers PHYSICA B-CONDENSED MATTER, 404, 23-24, 4745-4748 PHYSICA B-CONDENSED MATTER, 404, 23-24, 4745-4748 PHYSICA B-CONDENSED MATTER, 404, 23-24, 4745-4748 2009/12 英語 研究論文(学術雑誌) 公開
Jun Suda, Naoki Watanabe, Katsuhiko Fukunaga, Tsunenobu Kimoto Jun Suda, Naoki Watanabe, Katsuhiko Fukunaga, Tsunenobu Kimoto Jun Suda, Naoki Watanabe, Katsuhiko Fukunaga, Tsunenobu Kimoto Electrostatic-Actuated Suspended Ribbon Structure Fabricated in Single-Crystalline SiC by Selective Photoelectrochemical Etching Electrostatic-Actuated Suspended Ribbon Structure Fabricated in Single-Crystalline SiC by Selective Photoelectrochemical Etching Electrostatic-Actuated Suspended Ribbon Structure Fabricated in Single-Crystalline SiC by Selective Photoelectrochemical Etching JAPANESE JOURNAL OF APPLIED PHYSICS, 48, 11 JAPANESE JOURNAL OF APPLIED PHYSICS, 48, 11 JAPANESE JOURNAL OF APPLIED PHYSICS, 48, 11 2009/11 英語 研究論文(学術雑誌) 公開
Yuichiro Nanen, Hironori Yoshioka, Masato Noborio, Jun Suda, Tsunenobu Kimoto Yuichiro Nanen, Hironori Yoshioka, Masato Noborio, Jun Suda, Tsunenobu Kimoto Yuichiro Nanen, Hironori Yoshioka, Masato Noborio, Jun Suda, Tsunenobu Kimoto Enhanced Drain Current of 4H-SiC MOSFETs by Adopting a Three-Dimensional Gate Structure Enhanced Drain Current of 4H-SiC MOSFETs by Adopting a Three-Dimensional Gate Structure Enhanced Drain Current of 4H-SiC MOSFETs by Adopting a Three-Dimensional Gate Structure IEEE TRANSACTIONS ON ELECTRON DEVICES, 56, 11, 2632-2637 IEEE TRANSACTIONS ON ELECTRON DEVICES, 56, 11, 2632-2637 IEEE TRANSACTIONS ON ELECTRON DEVICES, 56, 11, 2632-2637 2009/11 英語 研究論文(学術雑誌) 公開
G. Alfieri, H. Nagasawa, T. Kimoto G. Alfieri, H. Nagasawa, T. Kimoto G. Alfieri, H. Nagasawa, T. Kimoto Thermal stability of deep levels between room temperature and 1500 degrees C in as-grown 3C-SiC Thermal stability of deep levels between room temperature and 1500 degrees C in as-grown 3C-SiC Thermal stability of deep levels between room temperature and 1500 degrees C in as-grown 3C-SiC JOURNAL OF APPLIED PHYSICS, 106, 7 JOURNAL OF APPLIED PHYSICS, 106, 7 JOURNAL OF APPLIED PHYSICS, 106, 7 2009/10 英語 研究論文(学術雑誌) 公開
Masato Noborio, Jun Suda, Svetlana Beljakowa, Michael Krieger, Tsunenobu Kimoto Masato Noborio, Jun Suda, Svetlana Beljakowa, Michael Krieger, Tsunenobu Kimoto Masato Noborio, Jun Suda, Svetlana Beljakowa, Michael Krieger, Tsunenobu Kimoto 4H-SiC MISFETs with nitrogen-containing insulators 4H-SiC MISFETs with nitrogen-containing insulators 4H-SiC MISFETs with nitrogen-containing insulators PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 206, 10, 2374-2390 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 206, 10, 2374-2390 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 206, 10, 2374-2390 2009/10 英語 研究論文(学術雑誌) 公開
B. Zippelius, S. Beljakowa, M. Krieger, G. Pensl, S. A. Reshanov, M. Noborio, T. Kimoto, V. V. Afanas&apos;ev B. Zippelius, S. Beljakowa, M. Krieger, G. Pensl, S. A. Reshanov, M. Noborio, T. Kimoto, V. V. Afanas&apos;ev B. Zippelius, S. Beljakowa, M. Krieger, G. Pensl, S. A. Reshanov, M. Noborio, T. Kimoto, V. V. Afanas&apos;ev High electron mobility achieved in n-channel 4H-SiC MOSFETs oxidized in the presence of nitrogen High electron mobility achieved in n-channel 4H-SiC MOSFETs oxidized in the presence of nitrogen High electron mobility achieved in n-channel 4H-SiC MOSFETs oxidized in the presence of nitrogen PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 206, 10, 2363-2373 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 206, 10, 2363-2373 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 206, 10, 2363-2373 2009/10 英語 研究論文(学術雑誌) 公開
Jun Suda, Tsunenobu Kimoto Jun Suda, Tsunenobu Kimoto Jun Suda, Tsunenobu Kimoto A New Class of Step-and-Terrace Structure Observed on 4H-SiC(0001) after High-Temperature Gas Etching A New Class of Step-and-Terrace Structure Observed on 4H-SiC(0001) after High-Temperature Gas Etching A New Class of Step-and-Terrace Structure Observed on 4H-SiC(0001) after High-Temperature Gas Etching APPLIED PHYSICS EXPRESS, 2, 10 APPLIED PHYSICS EXPRESS, 2, 10 APPLIED PHYSICS EXPRESS, 2, 10 2009/10 英語 研究論文(学術雑誌) 公開
Toru Hiyoshi, Tsunenobu Kimoto Toru Hiyoshi, Tsunenobu Kimoto Toru Hiyoshi, Tsunenobu Kimoto Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment APPLIED PHYSICS EXPRESS, 2, 9 APPLIED PHYSICS EXPRESS, 2, 9 APPLIED PHYSICS EXPRESS, 2, 9 2009/09 英語 研究論文(学術雑誌) 公開
Masahiro Horita, Tsunenobu Kimoto, Jun Suda Masahiro Horita, Tsunenobu Kimoto, Jun Suda Masahiro Horita, Tsunenobu Kimoto, Jun Suda Anomalously Large Difference in Ga Incorporation for AlGaN Grown on the (11(2)over-bar0) and (1(1)over-bar00) Planes under Group-III-Rich Conditions Anomalously Large Difference in Ga Incorporation for AlGaN Grown on the (11(2)over-bar0) and (1(1)over-bar00) Planes under Group-III-Rich Conditions Anomalously Large Difference in Ga Incorporation for AlGaN Grown on the (11(2)over-bar0) and (1(1)over-bar00) Planes under Group-III-Rich Conditions APPLIED PHYSICS EXPRESS, 2, 9 APPLIED PHYSICS EXPRESS, 2, 9 APPLIED PHYSICS EXPRESS, 2, 9 2009/09 英語 研究論文(学術雑誌) 公開
Kazuhiro Akiyama, Yasuhiro Ishii, Sohei Abe, Hisashi Murakami, Yoshinao Kumagai, Hironori Okumura, Tsunenobu Kimoto, Jun Suda, Akinori Koukitu Kazuhiro Akiyama, Yasuhiro Ishii, Sohei Abe, Hisashi Murakami, Yoshinao Kumagai, Hironori Okumura, Tsunenobu Kimoto, Jun Suda, Akinori Koukitu Kazuhiro Akiyama, Yasuhiro Ishii, Sohei Abe, Hisashi Murakami, Yoshinao Kumagai, Hironori Okumura, Tsunenobu Kimoto, Jun Suda, Akinori Koukitu In situ Gravimetric Monitoring of Thermal Decomposition and Hydrogen Etching Rates of 6H-SiC(0001) Si Face In situ Gravimetric Monitoring of Thermal Decomposition and Hydrogen Etching Rates of 6H-SiC(0001) Si Face In situ Gravimetric Monitoring of Thermal Decomposition and Hydrogen Etching Rates of 6H-SiC(0001) Si Face JAPANESE JOURNAL OF APPLIED PHYSICS, 48, 9 JAPANESE JOURNAL OF APPLIED PHYSICS, 48, 9 JAPANESE JOURNAL OF APPLIED PHYSICS, 48, 9 2009/09 英語 研究論文(学術雑誌) 公開
Masato Noborio, Jun Suda, Tsunenobu Kimoto Masato Noborio, Jun Suda, Tsunenobu Kimoto Masato Noborio, Jun Suda, Tsunenobu Kimoto P-Channel MOSFETs on 4H-SiC {0001} and Nonbasal Faces Fabricated by Oxide Deposition and N2O Annealing P-Channel MOSFETs on 4H-SiC {0001} and Nonbasal Faces Fabricated by Oxide Deposition and N2O Annealing P-Channel MOSFETs on 4H-SiC {0001} and Nonbasal Faces Fabricated by Oxide Deposition and N2O Annealing IEEE TRANSACTIONS ON ELECTRON DEVICES, 56, 9, 1953-1958 IEEE TRANSACTIONS ON ELECTRON DEVICES, 56, 9, 1953-1958 IEEE TRANSACTIONS ON ELECTRON DEVICES, 56, 9, 1953-1958 2009/09 英語 研究論文(学術雑誌) 公開
Hironori Yoshioka, Naoya Morioka, Jun Suda, Tsunenobu Kimoto Hironori Yoshioka, Naoya Morioka, Jun Suda, Tsunenobu Kimoto Hironori Yoshioka, Naoya Morioka, Jun Suda, Tsunenobu Kimoto Mobility oscillation by one-dimensional quantum confinement in Si-nanowire metal-oxide-semiconductor field effect transistors Mobility oscillation by one-dimensional quantum confinement in Si-nanowire metal-oxide-semiconductor field effect transistors Mobility oscillation by one-dimensional quantum confinement in Si-nanowire metal-oxide-semiconductor field effect transistors JOURNAL OF APPLIED PHYSICS, 106, 3 JOURNAL OF APPLIED PHYSICS, 106, 3 JOURNAL OF APPLIED PHYSICS, 106, 3 2009/08 英語 研究論文(学術雑誌) 公開
Masato Noborio, Jun Suda, Tsunenobu Kimoto Masato Noborio, Jun Suda, Tsunenobu Kimoto Masato Noborio, Jun Suda, Tsunenobu Kimoto 1580-V-40-m Omega . cm(2) Double-RESURF MOSFETs on 4H-SiC (000(1)over-bar) 1580-V-40-m Omega . cm(2) Double-RESURF MOSFETs on 4H-SiC (000(1)over-bar) 1580-V-40-m Omega . cm(2) Double-RESURF MOSFETs on 4H-SiC (000(1)over-bar) IEEE ELECTRON DEVICE LETTERS, 30, 8, 831-833 IEEE ELECTRON DEVICE LETTERS, 30, 8, 831-833 IEEE ELECTRON DEVICE LETTERS, 30, 8, 831-833 2009/08 英語 研究論文(学術雑誌) 公開
G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto The structural and electronic properties of chiral SiC nanotubes: a hybrid density functional study The structural and electronic properties of chiral SiC nanotubes: a hybrid density functional study The structural and electronic properties of chiral SiC nanotubes: a hybrid density functional study NANOTECHNOLOGY, 20, 28 NANOTECHNOLOGY, 20, 28 NANOTECHNOLOGY, 20, 28 2009/07 英語 研究論文(学術雑誌) 公開
Koutarou Kawahara, Giovanni Alfieri, Tsunenobu Kimoto Koutarou Kawahara, Giovanni Alfieri, Tsunenobu Kimoto Koutarou Kawahara, Giovanni Alfieri, Tsunenobu Kimoto Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4H-SiC Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4H-SiC Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4H-SiC JOURNAL OF APPLIED PHYSICS, 106, 1 JOURNAL OF APPLIED PHYSICS, 106, 1 JOURNAL OF APPLIED PHYSICS, 106, 1 2009/07 英語 研究論文(学術雑誌) 公開
Atsushi Koizumi, Jun Suda, Tsunenobu Kimoto Atsushi Koizumi, Jun Suda, Tsunenobu Kimoto Atsushi Koizumi, Jun Suda, Tsunenobu Kimoto Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial layers Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial layers Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial layers JOURNAL OF APPLIED PHYSICS, 106, 1 JOURNAL OF APPLIED PHYSICS, 106, 1 JOURNAL OF APPLIED PHYSICS, 106, 1 2009/07 英語 研究論文(学術雑誌) 公開
Hironori Okumura, Masahiro Horita, Tsunenobu Kimoto, Jun Suda Hironori Okumura, Masahiro Horita, Tsunenobu Kimoto, Jun Suda Hironori Okumura, Masahiro Horita, Tsunenobu Kimoto, Jun Suda Observation of novel defect structure in 2H-AlN grown on 6H-SiC(0001) substrates with 3-bilayer-height step-and-terrace structures Observation of novel defect structure in 2H-AlN grown on 6H-SiC(0001) substrates with 3-bilayer-height step-and-terrace structures Observation of novel defect structure in 2H-AlN grown on 6H-SiC(0001) substrates with 3-bilayer-height step-and-terrace structures PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 206, 6, 1187-1189 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 206, 6, 1187-1189 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 206, 6, 1187-1189 2009/06 英語 研究論文(学術雑誌) 公開
Tsuyoshi Funaki, Nathabhat Phankong, Tsunenobu Kimoto, Takashi Hikihara Tsuyoshi Funaki, Nathabhat Phankong, Tsunenobu Kimoto, Takashi Hikihara Tsuyoshi Funaki, Nathabhat Phankong, Tsunenobu Kimoto, Takashi Hikihara Measuring Terminal Capacitance and Its Voltage Dependency for High-Voltage Power Devices Measuring Terminal Capacitance and Its Voltage Dependency for High-Voltage Power Devices Measuring Terminal Capacitance and Its Voltage Dependency for High-Voltage Power Devices IEEE TRANSACTIONS ON POWER ELECTRONICS, 24, 5-6, 1486-1493 IEEE TRANSACTIONS ON POWER ELECTRONICS, 24, 5-6, 1486-1493 IEEE TRANSACTIONS ON POWER ELECTRONICS, 24, 5-6, 1486-1493 2009/05 英語 研究論文(学術雑誌) 公開
Toru Hiyoshi, Tsunenobu Kimoto Toru Hiyoshi, Tsunenobu Kimoto Toru Hiyoshi, Tsunenobu Kimoto Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation APPLIED PHYSICS EXPRESS, 2, 4 APPLIED PHYSICS EXPRESS, 2, 4 APPLIED PHYSICS EXPRESS, 2, 4 2009/04 英語 研究論文(学術雑誌) 公開
Gan Feng, Jun Suda, Tsunenobu Kimoto Gan Feng, Jun Suda, Tsunenobu Kimoto Gan Feng, Jun Suda, Tsunenobu Kimoto Triple Shockley type stacking faults in 4H-SiC epilayers Triple Shockley type stacking faults in 4H-SiC epilayers Triple Shockley type stacking faults in 4H-SiC epilayers APPLIED PHYSICS LETTERS, 94, 9 APPLIED PHYSICS LETTERS, 94, 9 APPLIED PHYSICS LETTERS, 94, 9 2009/03 英語 研究論文(学術雑誌) 公開
Jun Suda, Hiroki Miyake, Koichi Amari, Yuki Nakano, Tsunenobu Kimoto Jun Suda, Hiroki Miyake, Koichi Amari, Yuki Nakano, Tsunenobu Kimoto Jun Suda, Hiroki Miyake, Koichi Amari, Yuki Nakano, Tsunenobu Kimoto Systematic Investigation of c-Axis Tilt in GaN and AlGaN Grown on Vicinal SiC(0001) Substrates Systematic Investigation of c-Axis Tilt in GaN and AlGaN Grown on Vicinal SiC(0001) Substrates Systematic Investigation of c-Axis Tilt in GaN and AlGaN Grown on Vicinal SiC(0001) Substrates JAPANESE JOURNAL OF APPLIED PHYSICS, 48, 2 JAPANESE JOURNAL OF APPLIED PHYSICS, 48, 2 JAPANESE JOURNAL OF APPLIED PHYSICS, 48, 2 2009/02 英語 研究論文(学術雑誌) 公開
G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto Electronic properties of finite-length silicon carbide nanotubes Electronic properties of finite-length silicon carbide nanotubes Electronic properties of finite-length silicon carbide nanotubes PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 246, 2, 407-410 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 246, 2, 407-410 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 246, 2, 407-410 2009/02 英語 研究論文(学術雑誌) 公開
G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto Single versus double ion implantation a deep level study Single versus double ion implantation a deep level study Single versus double ion implantation a deep level study PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 246, 2, 402-406 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 246, 2, 402-406 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 246, 2, 402-406 2009/02 英語 研究論文(学術雑誌) 公開
Naoki Watanabe, Tsunenobu Kimoto, Jun Suda Naoki Watanabe, Tsunenobu Kimoto, Jun Suda Naoki Watanabe, Tsunenobu Kimoto, Jun Suda Determination of the thermo-optic coefficients of GaN and AlN up to 515 degrees C Determination of the thermo-optic coefficients of GaN and AlN up to 515 degrees C Determination of the thermo-optic coefficients of GaN and AlN up to 515 degrees C PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 6, SUPPL. 2, S776-S779 PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 6, SUPPL. 2, S776-S779 PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 6, SUPPL. 2, S776-S779 2009 英語 研究論文(国際会議プロシーディングス) 公開
Masato Noborio, Jun Suda, Tsunenobu Kimoto Masato Noborio, Jun Suda, Tsunenobu Kimoto Masato Noborio, Jun Suda, Tsunenobu Kimoto High Channel Mobility in P-Channel MOSFETs Fabricated on 4H-SiC (0001) and non-Basal Faces High Channel Mobility in P-Channel MOSFETs Fabricated on 4H-SiC (0001) and non-Basal Faces High Channel Mobility in P-Channel MOSFETs Fabricated on 4H-SiC (0001) and non-Basal Faces SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 789-792 SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 789-792 SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 789-792 2009 英語 研究論文(国際会議プロシーディングス) 公開
Koutarou Kawahara, Giovanni Alfieri, Tsunenobu Kimoto Koutarou Kawahara, Giovanni Alfieri, Tsunenobu Kimoto Koutarou Kawahara, Giovanni Alfieri, Tsunenobu Kimoto Deep Levels Generated by Ion-implantation in n- and p-type 4H-SiC Deep Levels Generated by Ion-implantation in n- and p-type 4H-SiC Deep Levels Generated by Ion-implantation in n- and p-type 4H-SiC SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 365-368 SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 365-368 SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 365-368 2009 英語 研究論文(国際会議プロシーディングス) 公開
Masato Noborio, Jun Suda, Tsunenobu Kimoto Masato Noborio, Jun Suda, Tsunenobu Kimoto Masato Noborio, Jun Suda, Tsunenobu Kimoto 1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C Face 1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C Face 1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C Face SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 757-760 SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 757-760 SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 757-760 2009 英語 研究論文(国際会議プロシーディングス) 公開
Yuichiro Nanen, Hironori Yoshioka, Masato Noborio, Jun Suda, Tsunenobu Kimoto Yuichiro Nanen, Hironori Yoshioka, Masato Noborio, Jun Suda, Tsunenobu Kimoto Yuichiro Nanen, Hironori Yoshioka, Masato Noborio, Jun Suda, Tsunenobu Kimoto Improved On-Current of 4H-SiC MOSFETs with a Three-Dimensional Gate Structure Improved On-Current of 4H-SiC MOSFETs with a Three-Dimensional Gate Structure Improved On-Current of 4H-SiC MOSFETs with a Three-Dimensional Gate Structure SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 753-756 SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 753-756 SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 753-756 2009 英語 研究論文(国際会議プロシーディングス) 公開
Gan Feng, Jun Suda, Tsunenobu Kimoto Gan Feng, Jun Suda, Tsunenobu Kimoto Gan Feng, Jun Suda, Tsunenobu Kimoto Spatial Profiling of Planar Defects in 4H-SiC Epilayers using Micro-photoluminescence Mapping Spatial Profiling of Planar Defects in 4H-SiC Epilayers using Micro-photoluminescence Mapping Spatial Profiling of Planar Defects in 4H-SiC Epilayers using Micro-photoluminescence Mapping SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 245-250 SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 245-250 SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 245-250 2009 英語 研究論文(国際会議プロシーディングス) 公開
S. A. Reshanov, S. Beljakowa, T. Frank, B. Zippelius, M. Krieger, G. Pensl, M. Noborio, T. Kimoto S. A. Reshanov, S. Beljakowa, T. Frank, B. Zippelius, M. Krieger, G. Pensl, M. Noborio, T. Kimoto S. A. Reshanov, S. Beljakowa, T. Frank, B. Zippelius, M. Krieger, G. Pensl, M. Noborio, T. Kimoto High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-oxidation of the N-/Al-coimplanted Surface Layer High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-oxidation of the N-/Al-coimplanted Surface Layer High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-oxidation of the N-/Al-coimplanted Surface Layer SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 765-768 SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 765-768 SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 765-768 2009 英語 研究論文(国際会議プロシーディングス) 公開
Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Improved Current Gain in GaN/SiC Heterojunction Bipolar Transistors by Insertion of Ultra-thin AlN Layer at Emitter-junction Improved Current Gain in GaN/SiC Heterojunction Bipolar Transistors by Insertion of Ultra-thin AlN Layer at Emitter-junction Improved Current Gain in GaN/SiC Heterojunction Bipolar Transistors by Insertion of Ultra-thin AlN Layer at Emitter-junction SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 979-982 SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 979-982 SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 979-982 2009 英語 研究論文(国際会議プロシーディングス) 公開
Giovanni Alfieri, Tsunenobu Kimoto Giovanni Alfieri, Tsunenobu Kimoto Giovanni Alfieri, Tsunenobu Kimoto Capacitance Spectroscopy Study of Midgap Levels in n-Type SiC Polytypes Capacitance Spectroscopy Study of Midgap Levels in n-Type SiC Polytypes Capacitance Spectroscopy Study of Midgap Levels in n-Type SiC Polytypes SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 389-392 SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 389-392 SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 389-392 2009 英語 研究論文(国際会議プロシーディングス) 公開
M. Grieb, M. Noborio, D. Peters, A. J. Bauer, P. Friedrichs, T. Kimoto, H. Ryssel M. Grieb, M. Noborio, D. Peters, A. J. Bauer, P. Friedrichs, T. Kimoto, H. Ryssel M. Grieb, M. Noborio, D. Peters, A. J. Bauer, P. Friedrichs, T. Kimoto, H. Ryssel Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N(2)O or NO Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N(2)O or NO Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N(2)O or NO SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 521-524 SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 521-524 SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 521-524 2009 英語 研究論文(国際会議プロシーディングス) 公開
S. A. Reshanov, G. Pensl, K. Danno, T. Kimoto, S. Hishiki, T. Ohshima, Fei Yan, R. P. Devaty, W. J. Choyke S. A. Reshanov, G. Pensl, K. Danno, T. Kimoto, S. Hishiki, T. Ohshima, Fei Yan, R. P. Devaty, W. J. Choyke S. A. Reshanov, G. Pensl, K. Danno, T. Kimoto, S. Hishiki, T. Ohshima, Fei Yan, R. P. Devaty, W. J. Choyke Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 600-603, 417-+ SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 600-603, 417-+ SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 600-603, 417-+ 2009 英語 研究論文(国際会議プロシーディングス) 公開
Masato Noborio, Jun Suda, Tsunenobu Kimoto Masato Noborio, Jun Suda, Tsunenobu Kimoto Masato Noborio, Jun Suda, Tsunenobu Kimoto Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO(2) Stack Gate Structures Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO(2) Stack Gate Structures Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO(2) Stack Gate Structures SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 600-603, 679-682 SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 600-603, 679-682 SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 600-603, 679-682 2009 英語 研究論文(国際会議プロシーディングス) 公開
G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto Search for hydrogen related defects in p-type 6H and 4H-SiC Search for hydrogen related defects in p-type 6H and 4H-SiC Search for hydrogen related defects in p-type 6H and 4H-SiC Materials Science Forum, 600-603, 421-424 Materials Science Forum, 600-603, 421-424 Materials Science Forum, 600-603, 421-424 2009 英語 研究論文(国際会議プロシーディングス) 公開
Toru Hiyoshi, Tsutomu Hori, Jun Suda, Tsunenobu Kimoto Toru Hiyoshi, Tsutomu Hori, Jun Suda, Tsunenobu Kimoto Toru Hiyoshi, Tsutomu Hori, Jun Suda, Tsunenobu Kimoto Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 600-603, 995-998 SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 600-603, 995-998 SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 600-603, 995-998 2009 英語 研究論文(国際会議プロシーディングス) 公開
Takeyoshi Masuda, Shin Harada, Takashi Tsuno, Yasuo Namikawa, Tsunenobu Kimoto, Ki Mot Takeyoshi Masuda, Shin Harada, Takashi Tsuno, Yasuo Namikawa, Tsunenobu Kimoto, Ki Mot Takeyoshi Masuda, Shin Harada, Takashi Tsuno, Yasuo Namikawa, Tsunenobu Kimoto, Ki Mot High Channel Mobility of 4H-SiC MOSFET Fabricated on Macro-Stepped Surface High Channel Mobility of 4H-SiC MOSFET Fabricated on Macro-Stepped Surface High Channel Mobility of 4H-SiC MOSFET Fabricated on Macro-Stepped Surface SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 600-603, 695-+ SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 600-603, 695-+ SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 600-603, 695-+ 2009 英語 研究論文(国際会議プロシーディングス) 公開
Naoki Watanabe, Tsunenobu Kimoto, Jun Suda Naoki Watanabe, Tsunenobu Kimoto, Jun Suda Naoki Watanabe, Tsunenobu Kimoto, Jun Suda The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 degrees C The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 degrees C The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 degrees C JOURNAL OF APPLIED PHYSICS, 104, 10 JOURNAL OF APPLIED PHYSICS, 104, 10 JOURNAL OF APPLIED PHYSICS, 104, 10 2008/11 英語 研究論文(学術雑誌) 公開
Masato Noborio, Jun Suda, Tsunenobu Kimoto Masato Noborio, Jun Suda, Tsunenobu Kimoto Masato Noborio, Jun Suda, Tsunenobu Kimoto N2O-grown oxides/4H-SiC (0001), (0338), and (1120) interface properties characterized by using p-type gate-controlled diodes N2O-grown oxides/4H-SiC (0001), (0338), and (1120) interface properties characterized by using p-type gate-controlled diodes N2O-grown oxides/4H-SiC (0001), (0338), and (1120) interface properties characterized by using p-type gate-controlled diodes APPLIED PHYSICS LETTERS, 93, 19 APPLIED PHYSICS LETTERS, 93, 19 APPLIED PHYSICS LETTERS, 93, 19 2008/11 英語 研究論文(学術雑誌) 公開
Masahiro Horita, Tsunenobu Kimoto, Jun Suda Masahiro Horita, Tsunenobu Kimoto, Jun Suda Masahiro Horita, Tsunenobu Kimoto, Jun Suda Surface Morphologies of 4H-SiC(11(2)over-bar0) and (1(1)over-bar00) Treated by High-Temperature Gas Etching Surface Morphologies of 4H-SiC(11(2)over-bar0) and (1(1)over-bar00) Treated by High-Temperature Gas Etching Surface Morphologies of 4H-SiC(11(2)over-bar0) and (1(1)over-bar00) Treated by High-Temperature Gas Etching JAPANESE JOURNAL OF APPLIED PHYSICS, 47, 11, 8388-8390 JAPANESE JOURNAL OF APPLIED PHYSICS, 47, 11, 8388-8390 JAPANESE JOURNAL OF APPLIED PHYSICS, 47, 11, 8388-8390 2008/11 英語 研究論文(学術雑誌) 公開
Kazuki Yamaji, Masato Noborio, Jun Suda, Tsunenobu Kimoto Kazuki Yamaji, Masato Noborio, Jun Suda, Tsunenobu Kimoto Kazuki Yamaji, Masato Noborio, Jun Suda, Tsunenobu Kimoto Improvement of Channel Mobility in Inversion-Type n-Channel GaN Metal-Oxide-Semiconductor Field-Effect Transistor by High-Temperature Annealing Improvement of Channel Mobility in Inversion-Type n-Channel GaN Metal-Oxide-Semiconductor Field-Effect Transistor by High-Temperature Annealing Improvement of Channel Mobility in Inversion-Type n-Channel GaN Metal-Oxide-Semiconductor Field-Effect Transistor by High-Temperature Annealing JAPANESE JOURNAL OF APPLIED PHYSICS, 47, 10, 7784-7787 JAPANESE JOURNAL OF APPLIED PHYSICS, 47, 10, 7784-7787 JAPANESE JOURNAL OF APPLIED PHYSICS, 47, 10, 7784-7787 2008/10 英語 研究論文(学術雑誌) 公開
Masato Noborio, Jun Suda, Tsunenobu Kimoto Masato Noborio, Jun Suda, Tsunenobu Kimoto Masato Noborio, Jun Suda, Tsunenobu Kimoto Improved Performance of 4H-SiC Double Reduced Surface Field Metal-Oxide-Semiconductor Field-Effect Transistors by Increasing RESURF Doses Improved Performance of 4H-SiC Double Reduced Surface Field Metal-Oxide-Semiconductor Field-Effect Transistors by Increasing RESURF Doses Improved Performance of 4H-SiC Double Reduced Surface Field Metal-Oxide-Semiconductor Field-Effect Transistors by Increasing RESURF Doses APPLIED PHYSICS EXPRESS, 1, 10 APPLIED PHYSICS EXPRESS, 1, 10 APPLIED PHYSICS EXPRESS, 1, 10 2008/10 英語 研究論文(学術雑誌) 公開
H. Okumura, M. Horita, T. Kimoto, J. Suda H. Okumura, M. Horita, T. Kimoto, J. Suda H. Okumura, M. Horita, T. Kimoto, J. Suda Impact of surface step heights of 6H-SiC (0001) vicinal substrates in heteroepitaxial growth of 2H-AlN Impact of surface step heights of 6H-SiC (0001) vicinal substrates in heteroepitaxial growth of 2H-AlN Impact of surface step heights of 6H-SiC (0001) vicinal substrates in heteroepitaxial growth of 2H-AlN APPLIED SURFACE SCIENCE, 254, 23, 7858-7860 APPLIED SURFACE SCIENCE, 254, 23, 7858-7860 APPLIED SURFACE SCIENCE, 254, 23, 7858-7860 2008/09 英語 研究論文(学術雑誌) 公開
Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara Evaluation of High Frequency Switching Capability of SiC Schottky Barrier Diode, Based on Junction Capacitance Model Evaluation of High Frequency Switching Capability of SiC Schottky Barrier Diode, Based on Junction Capacitance Model Evaluation of High Frequency Switching Capability of SiC Schottky Barrier Diode, Based on Junction Capacitance Model IEEE TRANSACTIONS ON POWER ELECTRONICS, 23, 5, 2602-2611 IEEE TRANSACTIONS ON POWER ELECTRONICS, 23, 5, 2602-2611 IEEE TRANSACTIONS ON POWER ELECTRONICS, 23, 5, 2602-2611 2008/09 英語 研究論文(学術雑誌) 公開
Tsuyoshi Funaki, Akira Nishio, Tsunenobu Kimoto, Takashi Hikihara Tsuyoshi Funaki, Akira Nishio, Tsunenobu Kimoto, Takashi Hikihara Tsuyoshi Funaki, Akira Nishio, Tsunenobu Kimoto, Takashi Hikihara A study on electro thermal response of SiC power module during high temperature operation A study on electro thermal response of SiC power module during high temperature operation A study on electro thermal response of SiC power module during high temperature operation IEICE ELECTRONICS EXPRESS, 5, 16, 597-602 IEICE ELECTRONICS EXPRESS, 5, 16, 597-602 IEICE ELECTRONICS EXPRESS, 5, 16, 597-602 2008/08 英語 研究論文(学術雑誌) 公開
Masahiro Horita, Tsunenobu Kimoto, Jun Suda Masahiro Horita, Tsunenobu Kimoto, Jun Suda Masahiro Horita, Tsunenobu Kimoto, Jun Suda Nonpolar 4H-AlN grown on 4H-SiC (1(1)over-bar00) with reduced stacking fault density realized by persistent layer-by-layer growth Nonpolar 4H-AlN grown on 4H-SiC (1(1)over-bar00) with reduced stacking fault density realized by persistent layer-by-layer growth Nonpolar 4H-AlN grown on 4H-SiC (1(1)over-bar00) with reduced stacking fault density realized by persistent layer-by-layer growth APPLIED PHYSICS LETTERS, 93, 8 APPLIED PHYSICS LETTERS, 93, 8 APPLIED PHYSICS LETTERS, 93, 8 2008/08 英語 研究論文(学術雑誌) 公開
Masato Noborio, Jun Suda, Tsunenobu Kimoto Masato Noborio, Jun Suda, Tsunenobu Kimoto Masato Noborio, Jun Suda, Tsunenobu Kimoto 4H-SiC MIS capacitors and MISFETs with deposited SiN(x)/SiO(2) stack-gate structures 4H-SiC MIS capacitors and MISFETs with deposited SiN(x)/SiO(2) stack-gate structures 4H-SiC MIS capacitors and MISFETs with deposited SiN(x)/SiO(2) stack-gate structures IEEE TRANSACTIONS ON ELECTRON DEVICES, 55, 8, 2054-2060 IEEE TRANSACTIONS ON ELECTRON DEVICES, 55, 8, 2054-2060 IEEE TRANSACTIONS ON ELECTRON DEVICES, 55, 8, 2054-2060 2008/08 英語 研究論文(学術雑誌) 公開
Toru Hiyoshi, Tsutomu Hori, Jun Suda, Tsunenobu Kimoto Toru Hiyoshi, Tsutomu Hori, Jun Suda, Tsunenobu Kimoto Toru Hiyoshi, Tsutomu Hori, Jun Suda, Tsunenobu Kimoto Simulation and experimental study on the junction termination structure for high-voltage 4H-SiC PiN diodes Simulation and experimental study on the junction termination structure for high-voltage 4H-SiC PiN diodes Simulation and experimental study on the junction termination structure for high-voltage 4H-SiC PiN diodes IEEE TRANSACTIONS ON ELECTRON DEVICES, 55, 8, 1841-1846 IEEE TRANSACTIONS ON ELECTRON DEVICES, 55, 8, 1841-1846 IEEE TRANSACTIONS ON ELECTRON DEVICES, 55, 8, 1841-1846 2008/08 英語 研究論文(学術雑誌) 公開
Jian H. Zhao, Gerhard Pensl, Tsunenobu Kimoto, Hiroyuki Matsunami, Hajime Kosugi, James A. Cooper, Maurice Weiner Jian H. Zhao, Gerhard Pensl, Tsunenobu Kimoto, Hiroyuki Matsunami, Hajime Kosugi, James A. Cooper, Maurice Weiner Jian H. Zhao, Gerhard Pensl, Tsunenobu Kimoto, Hiroyuki Matsunami, Hajime Kosugi, James A. Cooper, Maurice Weiner Special issue on silicon carbide devices and technology Special issue on silicon carbide devices and technology Special issue on silicon carbide devices and technology IEEE TRANSACTIONS ON ELECTRON DEVICES, 55, 8, 1795-1797 IEEE TRANSACTIONS ON ELECTRON DEVICES, 55, 8, 1795-1797 IEEE TRANSACTIONS ON ELECTRON DEVICES, 55, 8, 1795-1797 2008/08 英語 公開
Giovanni Alfieri, Tsunenobu Kimoto Giovanni Alfieri, Tsunenobu Kimoto Giovanni Alfieri, Tsunenobu Kimoto High-temperature annealing behavior of deep levels in 1 MeV electron irradiated p-type 6H-SiC High-temperature annealing behavior of deep levels in 1 MeV electron irradiated p-type 6H-SiC High-temperature annealing behavior of deep levels in 1 MeV electron irradiated p-type 6H-SiC APPLIED PHYSICS LETTERS, 93, 3 APPLIED PHYSICS LETTERS, 93, 3 APPLIED PHYSICS LETTERS, 93, 3 2008/07 英語 研究論文(学術雑誌) 公開
G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto Evidence for a hydrogen-related defect in implanted p-type 4H-SiC Evidence for a hydrogen-related defect in implanted p-type 4H-SiC Evidence for a hydrogen-related defect in implanted p-type 4H-SiC NEW JOURNAL OF PHYSICS, 10 NEW JOURNAL OF PHYSICS, 10 NEW JOURNAL OF PHYSICS, 10 2008/07 英語 研究論文(学術雑誌) 公開
Kei Senga, Tsunenobu Kimoto, Jun Suda Kei Senga, Tsunenobu Kimoto, Jun Suda Kei Senga, Tsunenobu Kimoto, Jun Suda Hydrogen implantation and annealing-induced exfoliation process in SiC wafers with various crystal orientations Hydrogen implantation and annealing-induced exfoliation process in SiC wafers with various crystal orientations Hydrogen implantation and annealing-induced exfoliation process in SiC wafers with various crystal orientations JAPANESE JOURNAL OF APPLIED PHYSICS, 47, 7, 5352-5354 JAPANESE JOURNAL OF APPLIED PHYSICS, 47, 7, 5352-5354 JAPANESE JOURNAL OF APPLIED PHYSICS, 47, 7, 5352-5354 2008/07 英語 研究論文(学術雑誌) 公開
Gerhard Pensl, Svetlana Beljakowa, Thomas Frank, Kunyuan Gao, Florian Speck, Thomas Seyller, Lothar Ley, Florin Ciobanu, Valery V. Afanas&apos;ev, Andre Stesmans, Tsunenobu Kimoto, Adolf Schoener Gerhard Pensl, Svetlana Beljakowa, Thomas Frank, Kunyuan Gao, Florian Speck, Thomas Seyller, Lothar Ley, Florin Ciobanu, Valery V. Afanas&apos;ev, Andre Stesmans, Tsunenobu Kimoto, Adolf Schoener Gerhard Pensl, Svetlana Beljakowa, Thomas Frank, Kunyuan Gao, Florian Speck, Thomas Seyller, Lothar Ley, Florin Ciobanu, Valery V. Afanas&apos;ev, Andre Stesmans, Tsunenobu Kimoto, Adolf Schoener Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 245, 7, 1378-1389 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 245, 7, 1378-1389 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 245, 7, 1378-1389 2008/07 英語 研究論文(学術雑誌) 公開
Tsunenobu Kimoto, Katsunori Danno, Jun Suda Tsunenobu Kimoto, Katsunori Danno, Jun Suda Tsunenobu Kimoto, Katsunori Danno, Jun Suda Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 245, 7, 1327-1336 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 245, 7, 1327-1336 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 245, 7, 1327-1336 2008/07 英語 研究論文(学術雑誌) 公開
Gan Feng, Jun Suda, Tsunenobu Kimoto Gan Feng, Jun Suda, Tsunenobu Kimoto Gan Feng, Jun Suda, Tsunenobu Kimoto Characterization of stacking faults in 4H-SiC epilayers by room-temperature microphotoluminescence mapping Characterization of stacking faults in 4H-SiC epilayers by room-temperature microphotoluminescence mapping Characterization of stacking faults in 4H-SiC epilayers by room-temperature microphotoluminescence mapping APPLIED PHYSICS LETTERS, 92, 22 APPLIED PHYSICS LETTERS, 92, 22 APPLIED PHYSICS LETTERS, 92, 22 2008/06 英語 研究論文(学術雑誌) 公開
Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena IEICE ELECTRONICS EXPRESS, 5, 6, 198-203 IEICE ELECTRONICS EXPRESS, 5, 6, 198-203 IEICE ELECTRONICS EXPRESS, 5, 6, 198-203 2008/03 英語 研究論文(学術雑誌) 公開
A. Oowadaa, M. Takeuchi, Y. Sakai, Y. Gotoh, M. Nagao, H. Tsuji, J. Ishikawa, S. Sakai, T. Kimoto A. Oowadaa, M. Takeuchi, Y. Sakai, Y. Gotoh, M. Nagao, H. Tsuji, J. Ishikawa, S. Sakai, T. Kimoto A. Oowadaa, M. Takeuchi, Y. Sakai, Y. Gotoh, M. Nagao, H. Tsuji, J. Ishikawa, S. Sakai, T. Kimoto Extension of lifetime of silicon field emitter arrays in oxygen ambient by carbon negative ion implantation Extension of lifetime of silicon field emitter arrays in oxygen ambient by carbon negative ion implantation Extension of lifetime of silicon field emitter arrays in oxygen ambient by carbon negative ion implantation JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 26, 2, 876-879 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 26, 2, 876-879 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 26, 2, 876-879 2008/03 英語 研究論文(学術雑誌) 公開
Mitsuaki Takeuchi, Toshihiko Kojima, Atsushi Oowada, Yasuhito Gotoh, Masayoshi Nagao, Hiroshi Tsuji, Junzo Ishikawa, Sigeki Sakai, Tsunenobu Kimoto Mitsuaki Takeuchi, Toshihiko Kojima, Atsushi Oowada, Yasuhito Gotoh, Masayoshi Nagao, Hiroshi Tsuji, Junzo Ishikawa, Sigeki Sakai, Tsunenobu Kimoto Mitsuaki Takeuchi, Toshihiko Kojima, Atsushi Oowada, Yasuhito Gotoh, Masayoshi Nagao, Hiroshi Tsuji, Junzo Ishikawa, Sigeki Sakai, Tsunenobu Kimoto Electron-emission properties of silicon field-emitter arrays in gaseous ambient for charge-compensation device Electron-emission properties of silicon field-emitter arrays in gaseous ambient for charge-compensation device Electron-emission properties of silicon field-emitter arrays in gaseous ambient for charge-compensation device JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 26, 2, 782-787 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 26, 2, 782-787 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 26, 2, 782-787 2008/03 英語 研究論文(学術雑誌) 公開
Daisuke Nakamura, Satoshi Yamaguchi, Yoshiharu Hirose, Toshihiko Tani, Kazumasa Takatori, Kentarou Kajiwara, Tsunenobu Kimoto Daisuke Nakamura, Satoshi Yamaguchi, Yoshiharu Hirose, Toshihiko Tani, Kazumasa Takatori, Kentarou Kajiwara, Tsunenobu Kimoto Daisuke Nakamura, Satoshi Yamaguchi, Yoshiharu Hirose, Toshihiko Tani, Kazumasa Takatori, Kentarou Kajiwara, Tsunenobu Kimoto Direct determination of Burgers vector sense and magnitude of elementary dislocations by synchrotron white x-ray topography Direct determination of Burgers vector sense and magnitude of elementary dislocations by synchrotron white x-ray topography Direct determination of Burgers vector sense and magnitude of elementary dislocations by synchrotron white x-ray topography JOURNAL OF APPLIED PHYSICS, 103, 1 JOURNAL OF APPLIED PHYSICS, 103, 1 JOURNAL OF APPLIED PHYSICS, 103, 1 2008/01 英語 研究論文(学術雑誌) 公開
Yoshiki Sakai, Atsushi Oowada, Mitsuaki Takeuchi, Yasuhito Gotoh, Masayoshi Nagao, Hiroshi Tsuji, Junzo Ishikawa, Shigeki Sakai, Tsunenobu Kimoto Yoshiki Sakai, Atsushi Oowada, Mitsuaki Takeuchi, Yasuhito Gotoh, Masayoshi Nagao, Hiroshi Tsuji, Junzo Ishikawa, Shigeki Sakai, Tsunenobu Kimoto Yoshiki Sakai, Atsushi Oowada, Mitsuaki Takeuchi, Yasuhito Gotoh, Masayoshi Nagao, Hiroshi Tsuji, Junzo Ishikawa, Shigeki Sakai, Tsunenobu Kimoto Energy distribution measurements of silicon field emitter arrays with a hemispherical energy analyzer Energy distribution measurements of silicon field emitter arrays with a hemispherical energy analyzer Energy distribution measurements of silicon field emitter arrays with a hemispherical energy analyzer Journal of the Vacuum Society of Japan, 51, 6, 401-404 Journal of the Vacuum Society of Japan, 51, 6, 401-404 Journal of the Vacuum Society of Japan, 51, 6, 401-404 2008 日本語 研究論文(国際会議プロシーディングス) 公開
S. A. Reshanov, G. Pensl, K. Danno, T. Kimoto, S. Hishiki, T. Ohshima, H. Itoh, Fei Yan, R. P. Devaty, W. J. Choyke S. A. Reshanov, G. Pensl, K. Danno, T. Kimoto, S. Hishiki, T. Ohshima, H. Itoh, Fei Yan, R. P. Devaty, W. J. Choyke S. A. Reshanov, G. Pensl, K. Danno, T. Kimoto, S. Hishiki, T. Ohshima, H. Itoh, Fei Yan, R. P. Devaty, W. J. Choyke Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy JOURNAL OF APPLIED PHYSICS, 102, 11 JOURNAL OF APPLIED PHYSICS, 102, 11 JOURNAL OF APPLIED PHYSICS, 102, 11 2007/12 英語 研究論文(学術雑誌) 公開
Tsutomu Hori, Katsunori Danno, Tsunenobu Kimoto Tsutomu Hori, Katsunori Danno, Tsunenobu Kimoto Tsutomu Hori, Katsunori Danno, Tsunenobu Kimoto Erratum to "Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition". [J. Crystal Growth 306 (2007) 297] (DOI:10.1016/j.jcrysgro.2007.05.009) Erratum to "Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition". [J. Crystal Growth 306 (2007) 297] (DOI:10.1016/j.jcrysgro.2007.05.009) Erratum to "Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition". [J. Crystal Growth 306 (2007) 297] (DOI:10.1016/j.jcrysgro.2007.05.009) Journal of Crystal Growth, 308, 2, 430 Journal of Crystal Growth, 308, 2, 430 Journal of Crystal Growth, 308, 2, 430 2007/10/15 英語 研究論文(学術雑誌) 公開
Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara Evaluation of capacitance-voltage characteristics for high voltage SiC-JFET Evaluation of capacitance-voltage characteristics for high voltage SiC-JFET Evaluation of capacitance-voltage characteristics for high voltage SiC-JFET IEICE ELECTRONICS EXPRESS, 4, 16, 517-523 IEICE ELECTRONICS EXPRESS, 4, 16, 517-523 IEICE ELECTRONICS EXPRESS, 4, 16, 517-523 2007/08 英語 研究論文(学術雑誌) 公開
Tsutomu Hori, Katsunori Danno, Tsunenobu Kimoto Tsutomu Hori, Katsunori Danno, Tsunenobu Kimoto Tsutomu Hori, Katsunori Danno, Tsunenobu Kimoto Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition JOURNAL OF CRYSTAL GROWTH, 306, 2, 297-302 JOURNAL OF CRYSTAL GROWTH, 306, 2, 297-302 JOURNAL OF CRYSTAL GROWTH, 306, 2, 297-302 2007/08 英語 研究論文(学術雑誌) 公開
G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto Thermal stability of defects in p-type as-grown 6H-SiC Thermal stability of defects in p-type as-grown 6H-SiC Thermal stability of defects in p-type as-grown 6H-SiC JOURNAL OF PHYSICS-CONDENSED MATTER, 19, 30 JOURNAL OF PHYSICS-CONDENSED MATTER, 19, 30 JOURNAL OF PHYSICS-CONDENSED MATTER, 19, 30 2007/08 英語 研究論文(学術雑誌) 公開
Yuki Negoro, Tsunenobu Kimoto, Hiroyuki Matsunami, Gerhard Pensl Yuki Negoro, Tsunenobu Kimoto, Hiroyuki Matsunami, Gerhard Pensl Yuki Negoro, Tsunenobu Kimoto, Hiroyuki Matsunami, Gerhard Pensl Abnormal out-diffusion of epitaxially doped boron in 4H-SiC caused by implantation and annealing Abnormal out-diffusion of epitaxially doped boron in 4H-SiC caused by implantation and annealing Abnormal out-diffusion of epitaxially doped boron in 4H-SiC caused by implantation and annealing JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46, 8A, 5053-5056 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46, 8A, 5053-5056 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46, 8A, 5053-5056 2007/08 英語 研究論文(学術雑誌) 公開
Tsuyoshi Funaki, Juan Carlos Balda, Jeremy Junghans, Avinash S. Kashyap, H. Alan Mantooth, Fred Barlow, Tsunenobu Kimoto, Takashi Hikihara Tsuyoshi Funaki, Juan Carlos Balda, Jeremy Junghans, Avinash S. Kashyap, H. Alan Mantooth, Fred Barlow, Tsunenobu Kimoto, Takashi Hikihara Tsuyoshi Funaki, Juan Carlos Balda, Jeremy Junghans, Avinash S. Kashyap, H. Alan Mantooth, Fred Barlow, Tsunenobu Kimoto, Takashi Hikihara Power conversion with SiC devices at extremely high ambient temperatures Power conversion with SiC devices at extremely high ambient temperatures Power conversion with SiC devices at extremely high ambient temperatures IEEE TRANSACTIONS ON POWER ELECTRONICS, 22, 4, 1321-1329 IEEE TRANSACTIONS ON POWER ELECTRONICS, 22, 4, 1321-1329 IEEE TRANSACTIONS ON POWER ELECTRONICS, 22, 4, 1321-1329 2007/07 英語 研究論文(学術雑誌) 公開
Daisuke Nakamura, Satoshi Yamaguchi, Itaru Gunjishima, Yoshiharu Hirose, Tsunenobu Kimoto Daisuke Nakamura, Satoshi Yamaguchi, Itaru Gunjishima, Yoshiharu Hirose, Tsunenobu Kimoto Daisuke Nakamura, Satoshi Yamaguchi, Itaru Gunjishima, Yoshiharu Hirose, Tsunenobu Kimoto Topographic study of dislocation structure in hexagonal SiC single crystals with low dislocation density Topographic study of dislocation structure in hexagonal SiC single crystals with low dislocation density Topographic study of dislocation structure in hexagonal SiC single crystals with low dislocation density JOURNAL OF CRYSTAL GROWTH, 304, 1, 57-63 JOURNAL OF CRYSTAL GROWTH, 304, 1, 57-63 JOURNAL OF CRYSTAL GROWTH, 304, 1, 57-63 2007/06 英語 研究論文(学術雑誌) 公開
Giovanni Alfieri, Tsunenobu Kimoto Giovanni Alfieri, Tsunenobu Kimoto Giovanni Alfieri, Tsunenobu Kimoto Deep level transient spectroscopy study of defects in hydrogen implanted p-type 4H-SiC Deep level transient spectroscopy study of defects in hydrogen implanted p-type 4H-SiC Deep level transient spectroscopy study of defects in hydrogen implanted p-type 4H-SiC JOURNAL OF APPLIED PHYSICS, 101, 10 JOURNAL OF APPLIED PHYSICS, 101, 10 JOURNAL OF APPLIED PHYSICS, 101, 10 2007/05 英語 研究論文(学術雑誌) 公開
Katsunori Danno, Tsunenobu Kimoto Katsunori Danno, Tsunenobu Kimoto Katsunori Danno, Tsunenobu Kimoto Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers JOURNAL OF APPLIED PHYSICS, 101, 10 JOURNAL OF APPLIED PHYSICS, 101, 10 JOURNAL OF APPLIED PHYSICS, 101, 10 2007/05 英語 研究論文(学術雑誌) 公開
Katsunori Danno, Daisuke Nakamura, Tsunenobu Kimoto Katsunori Danno, Daisuke Nakamura, Tsunenobu Kimoto Katsunori Danno, Daisuke Nakamura, Tsunenobu Kimoto Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation APPLIED PHYSICS LETTERS, 90, 20 APPLIED PHYSICS LETTERS, 90, 20 APPLIED PHYSICS LETTERS, 90, 20 2007/05 英語 研究論文(学術雑誌) 公開
Masato Noborio, Jun Suda, Tsunenobu Kimoto Masato Noborio, Jun Suda, Tsunenobu Kimoto Masato Noborio, Jun Suda, Tsunenobu Kimoto 4H-SiC lateral double RESURF MOSFETs with low ON resistance 4H-SiC lateral double RESURF MOSFETs with low ON resistance 4H-SiC lateral double RESURF MOSFETs with low ON resistance IEEE TRANSACTIONS ON ELECTRON DEVICES, 54, 5, 1216-1223 IEEE TRANSACTIONS ON ELECTRON DEVICES, 54, 5, 1216-1223 IEEE TRANSACTIONS ON ELECTRON DEVICES, 54, 5, 1216-1223 2007/05 英語 研究論文(学術雑誌) 公開
J. Suda, M. Horita, R. Armitage, T. Kimoto J. Suda, M. Horita, R. Armitage, T. Kimoto J. Suda, M. Horita, R. Armitage, T. Kimoto A comparative study of nonpolar a-plane and m-plane AlN grown on 4H-SiC by plasma-assisted molecular-beam epitaxy A comparative study of nonpolar a-plane and m-plane AlN grown on 4H-SiC by plasma-assisted molecular-beam epitaxy A comparative study of nonpolar a-plane and m-plane AlN grown on 4H-SiC by plasma-assisted molecular-beam epitaxy JOURNAL OF CRYSTAL GROWTH, 301, 410-413 JOURNAL OF CRYSTAL GROWTH, 301, 410-413 JOURNAL OF CRYSTAL GROWTH, 301, 410-413 2007/04 英語 研究論文(学術雑誌) 公開
Katsunori Danno, Tsutomu Hori, Tsunenobu Kimoto Katsunori Danno, Tsutomu Hori, Tsunenobu Kimoto Katsunori Danno, Tsutomu Hori, Tsunenobu Kimoto Impacts of growth parameters on deep levels in n-type 4H-SiC Impacts of growth parameters on deep levels in n-type 4H-SiC Impacts of growth parameters on deep levels in n-type 4H-SiC JOURNAL OF APPLIED PHYSICS, 101, 5 JOURNAL OF APPLIED PHYSICS, 101, 5 JOURNAL OF APPLIED PHYSICS, 101, 5 2007/03 英語 研究論文(学術雑誌) 公開
R. Armitage, M. Horita, J. Suda, T. Kimoto R. Armitage, M. Horita, J. Suda, T. Kimoto R. Armitage, M. Horita, J. Suda, T. Kimoto m-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga/N flux ratios on m-plane 4H-SiC substrates m-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga/N flux ratios on m-plane 4H-SiC substrates m-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga/N flux ratios on m-plane 4H-SiC substrates JOURNAL OF APPLIED PHYSICS, 101, 3 JOURNAL OF APPLIED PHYSICS, 101, 3 JOURNAL OF APPLIED PHYSICS, 101, 3 2007/02 英語 研究論文(学術雑誌) 公開
N. Onojima, M. Higashiwaki, J. Suda, T. Kimoto, T. Mimura, T. Matsui N. Onojima, M. Higashiwaki, J. Suda, T. Kimoto, T. Mimura, T. Matsui N. Onojima, M. Higashiwaki, J. Suda, T. Kimoto, T. Mimura, T. Matsui Reduction in potential barrier height of AlGaN/GaN heterostructures by SiN passivation Reduction in potential barrier height of AlGaN/GaN heterostructures by SiN passivation Reduction in potential barrier height of AlGaN/GaN heterostructures by SiN passivation JOURNAL OF APPLIED PHYSICS, 101, 4 JOURNAL OF APPLIED PHYSICS, 101, 4 JOURNAL OF APPLIED PHYSICS, 101, 4 2007/02 英語 研究論文(学術雑誌) 公開
Thomas Frank, Svetlana Beljakowa, Gerhard Pensl, Tsunenobu Kimoto, Valery V. Afanas'ev Thomas Frank, Svetlana Beljakowa, Gerhard Pensl, Tsunenobu Kimoto, Valery V. Afanas'ev Thomas Frank, Svetlana Beljakowa, Gerhard Pensl, Tsunenobu Kimoto, Valery V. Afanas'ev Control of the flatband voltage of 4H-SiC metal-oxide semiconductor (MOS) capacitors by co-implantation of nitrogen and aluminum Control of the flatband voltage of 4H-SiC metal-oxide semiconductor (MOS) capacitors by co-implantation of nitrogen and aluminum Control of the flatband voltage of 4H-SiC metal-oxide semiconductor (MOS) capacitors by co-implantation of nitrogen and aluminum SILICON CARBIDE AND RELATED MATERIALS 2006, 556-557, 555-+ SILICON CARBIDE AND RELATED MATERIALS 2006, 556-557, 555-+ SILICON CARBIDE AND RELATED MATERIALS 2006, 556-557, 555-+ 2007 英語 研究論文(国際会議プロシーディングス) 公開
Katsunori Danno, Tsunenobu Kimoto Katsunori Danno, Tsunenobu Kimoto Katsunori Danno, Tsunenobu Kimoto Deep levels in electron-irradiated n- and p-type 4H-SiC investigated by deep level transient Spectroscopy Deep levels in electron-irradiated n- and p-type 4H-SiC investigated by deep level transient Spectroscopy Deep levels in electron-irradiated n- and p-type 4H-SiC investigated by deep level transient Spectroscopy SILICON CARBIDE AND RELATED MATERIALS 2006, 556-557, 331-+ SILICON CARBIDE AND RELATED MATERIALS 2006, 556-557, 331-+ SILICON CARBIDE AND RELATED MATERIALS 2006, 556-557, 331-+ 2007 英語 研究論文(国際会議プロシーディングス) 公開
Masato Noborio, Jun Suda, Tsunenobu Kimoto Masato Noborio, Jun Suda, Tsunenobu Kimoto Masato Noborio, Jun Suda, Tsunenobu Kimoto Lateral 4H-SiC MOSFETs with low on-resistance by using two-zone double RESURF structure Lateral 4H-SiC MOSFETs with low on-resistance by using two-zone double RESURF structure Lateral 4H-SiC MOSFETs with low on-resistance by using two-zone double RESURF structure SILICON CARBIDE AND RELATED MATERIALS 2006, 556-557, 815-+ SILICON CARBIDE AND RELATED MATERIALS 2006, 556-557, 815-+ SILICON CARBIDE AND RELATED MATERIALS 2006, 556-557, 815-+ 2007 英語 研究論文(国際会議プロシーディングス) 公開
T. Kimoto, K. Danno, T. Hori, H. Matsunami T. Kimoto, K. Danno, T. Hori, H. Matsunami T. Kimoto, K. Danno, T. Hori, H. Matsunami Growth and electrical characterization of 4H-SiC epilayers Growth and electrical characterization of 4H-SiC epilayers Growth and electrical characterization of 4H-SiC epilayers SILICON CARBIDE AND RELATED MATERIALS 2006, 556-557, 35-+ SILICON CARBIDE AND RELATED MATERIALS 2006, 556-557, 35-+ SILICON CARBIDE AND RELATED MATERIALS 2006, 556-557, 35-+ 2007 英語 研究論文(国際会議プロシーディングス) 公開
G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto G. Alfieri, T. Kimoto Isochronal annealing study of deep levels in hydrogen implanted p-type 4H-SiC Isochronal annealing study of deep levels in hydrogen implanted p-type 4H-SiC Isochronal annealing study of deep levels in hydrogen implanted p-type 4H-SiC SILICON CARBIDE AND RELATED MATERIALS 2006, 556-557, 591-+ SILICON CARBIDE AND RELATED MATERIALS 2006, 556-557, 591-+ SILICON CARBIDE AND RELATED MATERIALS 2006, 556-557, 591-+ 2007 英語 研究論文(国際会議プロシーディングス) 公開
Hiroaki Saitoh, Akinori Seki, Akira Manabe, Tsunenobu Kimoto Hiroaki Saitoh, Akinori Seki, Akira Manabe, Tsunenobu Kimoto Hiroaki Saitoh, Akinori Seki, Akira Manabe, Tsunenobu Kimoto Interface properties of SiO2/4H-SiC(0001) with large off-angles formed by N2O oxidation Interface properties of SiO2/4H-SiC(0001) with large off-angles formed by N2O oxidation Interface properties of SiO2/4H-SiC(0001) with large off-angles formed by N2O oxidation SILICON CARBIDE AND RELATED MATERIALS 2006, 556-557, 659-+ SILICON CARBIDE AND RELATED MATERIALS 2006, 556-557, 659-+ SILICON CARBIDE AND RELATED MATERIALS 2006, 556-557, 659-+ 2007 英語 研究論文(国際会議プロシーディングス) 公開
T. Hori, K. Danno, T. Kimoto T. Hori, K. Danno, T. Kimoto T. Hori, K. Danno, T. Kimoto Low trap concentration and low basal-plane dislocation density in 4H-SiC,Epilayers grown at high growth rate Low trap concentration and low basal-plane dislocation density in 4H-SiC,Epilayers grown at high growth rate Low trap concentration and low basal-plane dislocation density in 4H-SiC,Epilayers grown at high growth rate SILICON CARBIDE AND RELATED MATERIALS 2006, 556-557, 129-+ SILICON CARBIDE AND RELATED MATERIALS 2006, 556-557, 129-+ SILICON CARBIDE AND RELATED MATERIALS 2006, 556-557, 129-+ 2007 英語 研究論文(国際会議プロシーディングス) 公開
Koichi Amari, Jun Suda, Tsunenobu Kimoto Koichi Amari, Jun Suda, Tsunenobu Kimoto Koichi Amari, Jun Suda, Tsunenobu Kimoto Impact of acceptor concentration on electronic properties of n(+)-GaN/p(+)-SiC heterojunction for GaN/SiC heterojunction bipolar transistor Impact of acceptor concentration on electronic properties of n(+)-GaN/p(+)-SiC heterojunction for GaN/SiC heterojunction bipolar transistor Impact of acceptor concentration on electronic properties of n(+)-GaN/p(+)-SiC heterojunction for GaN/SiC heterojunction bipolar transistor SILICON CARBIDE AND RELATED MATERIALS 2006, 556-557, 1039-+ SILICON CARBIDE AND RELATED MATERIALS 2006, 556-557, 1039-+ SILICON CARBIDE AND RELATED MATERIALS 2006, 556-557, 1039-+ 2007 英語 研究論文(国際会議プロシーディングス) 公開
Noboru Ohtani, Takao Nakamura, Hitoshi Sumiya, Fumio Hasegawa, Seiji Sarayama, Takashi Taniguchi, Kenji Watanabe, Shinsuke Fujiwara, Yasube Kashiwaba, Ikuo Niikura, Tsunenobu Kimoto, Takashi Egawa, Hideyo Okushi, Kentaro Onabe, Kazuyuki Tadatomo, Kazumasa Hiramatsu, Akihiko Yoshikawa, Hideo Kawanishi, Katsuhiro Akimoto, Takafumi Yao, Takashi Hanada Noboru Ohtani, Takao Nakamura, Hitoshi Sumiya, Fumio Hasegawa, Seiji Sarayama, Takashi Taniguchi, Kenji Watanabe, Shinsuke Fujiwara, Yasube Kashiwaba, Ikuo Niikura, Tsunenobu Kimoto, Takashi Egawa, Hideyo Okushi, Kentaro Onabe, Kazuyuki Tadatomo, Kazumasa Hiramatsu, Akihiko Yoshikawa, Hideo Kawanishi, Katsuhiro Akimoto, Takafumi Yao, Takashi Hanada Noboru Ohtani, Takao Nakamura, Hitoshi Sumiya, Fumio Hasegawa, Seiji Sarayama, Takashi Taniguchi, Kenji Watanabe, Shinsuke Fujiwara, Yasube Kashiwaba, Ikuo Niikura, Tsunenobu Kimoto, Takashi Egawa, Hideyo Okushi, Kentaro Onabe, Kazuyuki Tadatomo, Kazumasa Hiramatsu, Akihiko Yoshikawa, Hideo Kawanishi, Katsuhiro Akimoto, Takafumi Yao, Takashi Hanada Crystal growth Crystal growth Crystal growth Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices, 329-445 Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices, 329-445 Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices, 329-445 2007 英語 公開
M. Horita, J. Suda, T. Kimoto M. Horita, J. Suda, T. Kimoto M. Horita, J. Suda, T. Kimoto Reduction of threading dislocations in nonpolar 4H-AIN on 4H-SiC (11(2)over-bar0) grown by molecular-beam epitaxy with slightly Al-rich conditions Reduction of threading dislocations in nonpolar 4H-AIN on 4H-SiC (11(2)over-bar0) grown by molecular-beam epitaxy with slightly Al-rich conditions Reduction of threading dislocations in nonpolar 4H-AIN on 4H-SiC (11(2)over-bar0) grown by molecular-beam epitaxy with slightly Al-rich conditions PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 4, 7, 2552-+ PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 4, 7, 2552-+ PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 4, 7, 2552-+ 2007 英語 研究論文(国際会議プロシーディングス) 公開
N. Onojima, M. Higashiwaki, T. Matsui, T. Mimura, J. Suda, T. Kimoto N. Onojima, M. Higashiwaki, T. Matsui, T. Mimura, J. Suda, T. Kimoto N. Onojima, M. Higashiwaki, T. Matsui, T. Mimura, J. Suda, T. Kimoto XPS study of surface potential in AlGaN/GaN heterostructure with Cat-CVD SiN passivation XPS study of surface potential in AlGaN/GaN heterostructure with Cat-CVD SiN passivation XPS study of surface potential in AlGaN/GaN heterostructure with Cat-CVD SiN passivation PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 4, 7, 2354-+ PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 4, 7, 2354-+ PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 4, 7, 2354-+ 2007 英語 研究論文(国際会議プロシーディングス) 公開
A. Oowada, T. Kojima, M. Takeuchi, Y. Gotoh, M. Nagao, H. Tsuji, J. Ishikawa, S. Sakai, T. Kimoto A. Oowada, T. Kojima, M. Takeuchi, Y. Gotoh, M. Nagao, H. Tsuji, J. Ishikawa, S. Sakai, T. Kimoto Long time operation of Si:C field emitter arrays in H<sub>2</sub> gas atmosphere Long time operation of Si:C field emitter arrays in H<sub>2</sub> gas atmosphere Shinku/Journal of the Vacuum Society of Japan, 50, 3, 178-180 Shinku/Journal of the Vacuum Society of Japan, 50, 3, 178-180 , 50, 3, 178-180 2007 日本語 公開
Katsunori Danno, Tsunenobu Kimoto Katsunori Danno, Tsunenobu Kimoto Katsunori Danno, Tsunenobu Kimoto Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons JOURNAL OF APPLIED PHYSICS, 100, 11 JOURNAL OF APPLIED PHYSICS, 100, 11 JOURNAL OF APPLIED PHYSICS, 100, 11 2006/12 英語 研究論文(学術雑誌) 公開
T. Kimoto, K. Wada, K. Danno T. Kimoto, K. Wada, K. Danno T. Kimoto, K. Wada, K. Danno Epitaxial growth of 4H-SiC{0001} and reduction of deep levels Epitaxial growth of 4H-SiC{0001} and reduction of deep levels Epitaxial growth of 4H-SiC{0001} and reduction of deep levels SUPERLATTICES AND MICROSTRUCTURES, 40, 4-6, 225-232 SUPERLATTICES AND MICROSTRUCTURES, 40, 4-6, 225-232 SUPERLATTICES AND MICROSTRUCTURES, 40, 4-6, 225-232 2006/10 英語 研究論文(学術雑誌) 公開
Tatsuya Okada, Kengo Ochi, Hiroyuki Kawahara, Takuro Tomita, Shigeki Matsuo, Makoto Yamaguchi, Kouichi Higashimine, Tsunenobu Kimoto Tatsuya Okada, Kengo Ochi, Hiroyuki Kawahara, Takuro Tomita, Shigeki Matsuo, Makoto Yamaguchi, Kouichi Higashimine, Tsunenobu Kimoto Tatsuya Okada, Kengo Ochi, Hiroyuki Kawahara, Takuro Tomita, Shigeki Matsuo, Makoto Yamaguchi, Kouichi Higashimine, Tsunenobu Kimoto Source of surface morphological defects formed on 4H-SiC homoepitaxial films Source of surface morphological defects formed on 4H-SiC homoepitaxial films Source of surface morphological defects formed on 4H-SiC homoepitaxial films JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45, 10A, 7625-7631 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45, 10A, 7625-7631 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45, 10A, 7625-7631 2006/10 英語 研究論文(学術雑誌) 公開
Masahiro Horita, Jun Suda, Tsunenobu Kimoto Masahiro Horita, Jun Suda, Tsunenobu Kimoto Masahiro Horita, Jun Suda, Tsunenobu Kimoto High-quality nonpolar 4H-AlN grown on 4H-SiC (11(2)over-bar20) substrate by molecular-beam epitaxy High-quality nonpolar 4H-AlN grown on 4H-SiC (11(2)over-bar20) substrate by molecular-beam epitaxy High-quality nonpolar 4H-AlN grown on 4H-SiC (11(2)over-bar20) substrate by molecular-beam epitaxy APPLIED PHYSICS LETTERS, 89, 11 APPLIED PHYSICS LETTERS, 89, 11 APPLIED PHYSICS LETTERS, 89, 11 2006/09 英語 研究論文(学術雑誌) 公開
M. Kato, S. Tanaka, M. Ichimura, E. Arai, S. Nakamura, T. Kimoto, R. Paessler M. Kato, S. Tanaka, M. Ichimura, E. Arai, S. Nakamura, T. Kimoto, R. Paessler M. Kato, S. Tanaka, M. Ichimura, E. Arai, S. Nakamura, T. Kimoto, R. Paessler Optical cross sections of deep levels in 4H-SiC Optical cross sections of deep levels in 4H-SiC Optical cross sections of deep levels in 4H-SiC JOURNAL OF APPLIED PHYSICS, 100, 5 JOURNAL OF APPLIED PHYSICS, 100, 5 JOURNAL OF APPLIED PHYSICS, 100, 5 2006/09 英語 研究論文(学術雑誌) 公開
Tsuyoshi Funaki, Shuntaro Matsuzaki, Tsunenobu Kimoto, Takashi Hikihara Tsuyoshi Funaki, Shuntaro Matsuzaki, Tsunenobu Kimoto, Takashi Hikihara Tsuyoshi Funaki, Shuntaro Matsuzaki, Tsunenobu Kimoto, Takashi Hikihara Characterization of punch-through phenomenon in SiC-SBD by capacitance-voltage measurement at high reverse bias voltage Characterization of punch-through phenomenon in SiC-SBD by capacitance-voltage measurement at high reverse bias voltage Characterization of punch-through phenomenon in SiC-SBD by capacitance-voltage measurement at high reverse bias voltage IEICE ELECTRONICS EXPRESS, 3, 16, 379-384 IEICE ELECTRONICS EXPRESS, 3, 16, 379-384 IEICE ELECTRONICS EXPRESS, 3, 16, 379-384 2006/08 英語 研究論文(学術雑誌) 公開
K Wada, T Kimoto, K Nishikawa, H Matsunami K Wada, T Kimoto, K Nishikawa, H Matsunami K Wada, T Kimoto, K Nishikawa, H Matsunami Epitaxial growth of 4H-SIC on 4 degrees off-axis (0001) and (0001) substrates by hot-wall chemical vapor deposition Epitaxial growth of 4H-SIC on 4 degrees off-axis (0001) and (0001) substrates by hot-wall chemical vapor deposition Epitaxial growth of 4H-SIC on 4 degrees off-axis (0001) and (0001) substrates by hot-wall chemical vapor deposition JOURNAL OF CRYSTAL GROWTH, 291, 2, 370-374 JOURNAL OF CRYSTAL GROWTH, 291, 2, 370-374 JOURNAL OF CRYSTAL GROWTH, 291, 2, 370-374 2006/06 英語 研究論文(学術雑誌) 公開
S Kamiyama, T Maeda, Y Nakamura, M Iwaya, H Amano, Akasaki, I, H Kinoshita, T Furusho, M Yoshimoto, T Kimoto, J Suda, A Henry, IG Ivanov, JP Bergman, B Monemar, T Onuma, SF Chichibu S Kamiyama, T Maeda, Y Nakamura, M Iwaya, H Amano, Akasaki, I, H Kinoshita, T Furusho, M Yoshimoto, T Kimoto, J Suda, A Henry, IG Ivanov, JP Bergman, B Monemar, T Onuma, SF Chichibu S Kamiyama, T Maeda, Y Nakamura, M Iwaya, H Amano, Akasaki, I, H Kinoshita, T Furusho, M Yoshimoto, T Kimoto, J Suda, A Henry, IG Ivanov, JP Bergman, B Monemar, T Onuma, SF Chichibu Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC JOURNAL OF APPLIED PHYSICS, 99, 9 JOURNAL OF APPLIED PHYSICS, 99, 9 JOURNAL OF APPLIED PHYSICS, 99, 9 2006/05 英語 研究論文(学術雑誌) 公開
Hirofumi Suto, Shunjiro Fujii, Nobuhiko Miyamae, Robert D. Armitage, Jun Suda, Tsunenobu Kimoto, Shin-ichi Honda, Mitsuhiro Katayama Hirofumi Suto, Shunjiro Fujii, Nobuhiko Miyamae, Robert D. Armitage, Jun Suda, Tsunenobu Kimoto, Shin-ichi Honda, Mitsuhiro Katayama Hirofumi Suto, Shunjiro Fujii, Nobuhiko Miyamae, Robert D. Armitage, Jun Suda, Tsunenobu Kimoto, Shin-ichi Honda, Mitsuhiro Katayama Structure analysis of ZrB2(0001) surface prepared by ex situ HF treatment Structure analysis of ZrB2(0001) surface prepared by ex situ HF treatment Structure analysis of ZrB2(0001) surface prepared by ex situ HF treatment JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 45, 17-19, L497-L500 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 45, 17-19, L497-L500 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 45, 17-19, L497-L500 2006/05 英語 研究論文(学術雑誌) 公開
R Armitage, J Suda, T Kimoto R Armitage, J Suda, T Kimoto R Armitage, J Suda, T Kimoto Characterization of ZrB2(0001) surface prepared by ex situ HF solution treatment toward applications as a substrate for GaN growth Characterization of ZrB2(0001) surface prepared by ex situ HF solution treatment toward applications as a substrate for GaN growth Characterization of ZrB2(0001) surface prepared by ex situ HF solution treatment toward applications as a substrate for GaN growth SURFACE SCIENCE, 600, 7, 1439-1449 SURFACE SCIENCE, 600, 7, 1439-1449 SURFACE SCIENCE, 600, 7, 1439-1449 2006/04 英語 研究論文(学術雑誌) 公開
K Danno, T Kimoto K Danno, T Kimoto K Danno, T Kimoto High-temperature deep level transient spectroscopy on As-grown P-type 4H-SiC epilayers High-temperature deep level transient spectroscopy on As-grown P-type 4H-SiC epilayers High-temperature deep level transient spectroscopy on As-grown P-type 4H-SiC epilayers JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 45, 8-11, L285-L287 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 45, 8-11, L285-L287 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 45, 8-11, L285-L287 2006/03 英語 研究論文(学術雑誌) 公開
R Armitage, J Suda, T Kimoto R Armitage, J Suda, T Kimoto R Armitage, J Suda, T Kimoto Epitaxy of nonpolar AlN on 4H-SiC (1-100) substrates Epitaxy of nonpolar AlN on 4H-SiC (1-100) substrates Epitaxy of nonpolar AlN on 4H-SiC (1-100) substrates APPLIED PHYSICS LETTERS, 88, 1 APPLIED PHYSICS LETTERS, 88, 1 APPLIED PHYSICS LETTERS, 88, 1 2006/01 英語 研究論文(学術雑誌) 公開
Y Negoro, T Kimoto, M Kataoka, Y Takeuchi, RK Malhan, H Matsunami Y Negoro, T Kimoto, M Kataoka, Y Takeuchi, RK Malhan, H Matsunami Y Negoro, T Kimoto, M Kataoka, Y Takeuchi, RK Malhan, H Matsunami Embedded epitaxial growth of 4H-SiC on trenched substrates and pn junction characteristics Embedded epitaxial growth of 4H-SiC on trenched substrates and pn junction characteristics Embedded epitaxial growth of 4H-SiC on trenched substrates and pn junction characteristics MICROELECTRONIC ENGINEERING, 83, 1, 27-29 MICROELECTRONIC ENGINEERING, 83, 1, 27-29 MICROELECTRONIC ENGINEERING, 83, 1, 27-29 2006/01 英語 研究論文(学術雑誌) 公開
Masato Noborio, Yuki Negoro, Jun Suda, Tsunenobu Kimoto Masato Noborio, Yuki Negoro, Jun Suda, Tsunenobu Kimoto Masato Noborio, Yuki Negoro, Jun Suda, Tsunenobu Kimoto Reduction of on-resistance in 4H-SiC Multi-RESURF MOSFETs Reduction of on-resistance in 4H-SiC Multi-RESURF MOSFETs Reduction of on-resistance in 4H-SiC Multi-RESURF MOSFETs SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 527-529, PART 2, 1305-+ SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 527-529, PART 2, 1305-+ SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 527-529, PART 2, 1305-+ 2006 英語 研究論文(国際会議プロシーディングス) 公開
Y. Negoro, T. Kimoto, H. Matsunami, G. Pensl Y. Negoro, T. Kimoto, H. Matsunami, G. Pensl Y. Negoro, T. Kimoto, H. Matsunami, G. Pensl Kick-out phenomena in epitaxially boron- and aluminum-doped 4H-SIC during implantation and annealing processes Kick-out phenomena in epitaxially boron- and aluminum-doped 4H-SIC during implantation and annealing processes Kick-out phenomena in epitaxially boron- and aluminum-doped 4H-SIC during implantation and annealing processes Silicon Carbide and Related Materials 2005, Pts 1 and 2, 527-529, PART 2, 843-846 Silicon Carbide and Related Materials 2005, Pts 1 and 2, 527-529, PART 2, 843-846 Silicon Carbide and Related Materials 2005, Pts 1 and 2, 527-529, PART 2, 843-846 2006 英語 研究論文(国際会議プロシーディングス) 公開
T. Tomita, S. Matsuo, T. Okada, T. Kimoto, T. Mitani, S.-I. Nakashima T. Tomita, S. Matsuo, T. Okada, T. Kimoto, T. Mitani, S.-I. Nakashima T. Tomita, S. Matsuo, T. Okada, T. Kimoto, T. Mitani, S.-I. Nakashima Structures of cornets in a homoepitaxially grown 4H-SiC film studied by DUV micro-Raman spectroscopy Structures of cornets in a homoepitaxially grown 4H-SiC film studied by DUV micro-Raman spectroscopy Structures of cornets in a homoepitaxially grown 4H-SiC film studied by DUV micro-Raman spectroscopy Materials Science Forum, 527-529, PART 1, 339-342 Materials Science Forum, 527-529, PART 1, 339-342 Materials Science Forum, 527-529, PART 1, 339-342 2006 英語 公開
Y. Takeuchi, M. Kataoka, T. Kimoto, H. Matsunami, R. K. Malhan Y. Takeuchi, M. Kataoka, T. Kimoto, H. Matsunami, R. K. Malhan Y. Takeuchi, M. Kataoka, T. Kimoto, H. Matsunami, R. K. Malhan SiC migration enhanced embedded epitaxial (ME3) growth technology SiC migration enhanced embedded epitaxial (ME3) growth technology SiC migration enhanced embedded epitaxial (ME3) growth technology Silicon Carbide and Related Materials 2005, Pts 1 and 2, 527-529, PART 1, 251-254 Silicon Carbide and Related Materials 2005, Pts 1 and 2, 527-529, PART 1, 251-254 Silicon Carbide and Related Materials 2005, Pts 1 and 2, 527-529, PART 1, 251-254 2006 英語 研究論文(国際会議プロシーディングス) 公開
Jun Suda, Yuki Nakano, Syouta Shimada, Kouichi Amari, Tsunenobu Kimoto Jun Suda, Yuki Nakano, Syouta Shimada, Kouichi Amari, Tsunenobu Kimoto Jun Suda, Yuki Nakano, Syouta Shimada, Kouichi Amari, Tsunenobu Kimoto Electron injection from GaN to SiC and fabrication of GaN/SiC heterojunction bipolar transistors Electron injection from GaN to SiC and fabrication of GaN/SiC heterojunction bipolar transistors Electron injection from GaN to SiC and fabrication of GaN/SiC heterojunction bipolar transistors Silicon Carbide and Related Materials 2005, Pts 1 and 2, 527-529, PART 2, 1545-1548 Silicon Carbide and Related Materials 2005, Pts 1 and 2, 527-529, PART 2, 1545-1548 Silicon Carbide and Related Materials 2005, Pts 1 and 2, 527-529, PART 2, 1545-1548 2006 英語 研究論文(国際会議プロシーディングス) 公開
T. Kimoto, H. Kawano, M. Noborio, J. Suda, H. Matsunami T. Kimoto, H. Kawano, M. Noborio, J. Suda, H. Matsunami T. Kimoto, H. Kawano, M. Noborio, J. Suda, H. Matsunami Improved dielectric and interface properties of 4H-SiC MOS structures processed by oxide deposition and N2O annealing Improved dielectric and interface properties of 4H-SiC MOS structures processed by oxide deposition and N2O annealing Improved dielectric and interface properties of 4H-SiC MOS structures processed by oxide deposition and N2O annealing Silicon Carbide and Related Materials 2005, Pts 1 and 2, 527-529, PART 2, 987-990 Silicon Carbide and Related Materials 2005, Pts 1 and 2, 527-529, PART 2, 987-990 Silicon Carbide and Related Materials 2005, Pts 1 and 2, 527-529, PART 2, 987-990 2006 英語 研究論文(国際会議プロシーディングス) 公開
Tatsuya Okada, Kouichi Okamoto, Kengo Ochi, Kouichi Higashimine, Tsunenobu Kimoto Tatsuya Okada, Kouichi Okamoto, Kengo Ochi, Kouichi Higashimine, Tsunenobu Kimoto Tatsuya Okada, Kouichi Okamoto, Kengo Ochi, Kouichi Higashimine, Tsunenobu Kimoto Origin of surface morphological defects in 4H-SiC homoepitaxial films Origin of surface morphological defects in 4H-SiC homoepitaxial films Origin of surface morphological defects in 4H-SiC homoepitaxial films Silicon Carbide and Related Materials 2005, Pts 1 and 2, 527-529, PART 1, 399-402 Silicon Carbide and Related Materials 2005, Pts 1 and 2, 527-529, PART 1, 399-402 Silicon Carbide and Related Materials 2005, Pts 1 and 2, 527-529, PART 1, 399-402 2006 英語 研究論文(国際会議プロシーディングス) 公開
Hiroaki Saitoh, Akira Manabe, Tsunenobu Kimoto Hiroaki Saitoh, Akira Manabe, Tsunenobu Kimoto Hiroaki Saitoh, Akira Manabe, Tsunenobu Kimoto Epitaxial growth of 4H-SiC {0001} with large off-angles by chemical vapor deposition Epitaxial growth of 4H-SiC {0001} with large off-angles by chemical vapor deposition Epitaxial growth of 4H-SiC {0001} with large off-angles by chemical vapor deposition Silicon Carbide and Related Materials 2005, Pts 1 and 2, 527-529, PART 1, 223-226 Silicon Carbide and Related Materials 2005, Pts 1 and 2, 527-529, PART 1, 223-226 Silicon Carbide and Related Materials 2005, Pts 1 and 2, 527-529, PART 1, 223-226 2006 英語 研究論文(国際会議プロシーディングス) 公開
Florin Ciobanu, Thomas Frank, Gerhard Pensl, Valery V. Afanas&apos;ev, Sheron Shamuilia, Adolf Schoner, Tsunenobu Kimoto Florin Ciobanu, Thomas Frank, Gerhard Pensl, Valery V. Afanas&apos;ev, Sheron Shamuilia, Adolf Schoner, Tsunenobu Kimoto Florin Ciobanu, Thomas Frank, Gerhard Pensl, Valery V. Afanas&apos;ev, Sheron Shamuilia, Adolf Schoner, Tsunenobu Kimoto Nitrogen implantation - an alternative technique to reduce traps at SiC/SiO(2)-interfaces Nitrogen implantation - an alternative technique to reduce traps at SiC/SiO(2)-interfaces Nitrogen implantation - an alternative technique to reduce traps at SiC/SiO(2)-interfaces SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 527-529, PART 2, 991-994 SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 527-529, PART 2, 991-994 SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 527-529, PART 2, 991-994 2006 英語 研究論文(国際会議プロシーディングス) 公開
木本 恒暢 木本 恒暢 半導体デバイスの研究に関する顕著な業績 半導体デバイスの研究に関する顕著な業績 米国電気電子工学会シニアメンバー 木本 恒暢教授(電子工学専攻)平成18 年1 月21 日受賞 米国電気電子工学会シニアメンバー 木本 恒暢教授(電子工学専攻)平成18 年1 月21 日受賞 2006 日本語 公開
M. Horita, J. Suda, T. Kimoto M. Horita, J. Suda, T. Kimoto M. Horita, J. Suda, T. Kimoto Impact of III/V ratio on polytype and crystalline quality of AIN grown on 4H-SiC (1120) substrate by molecular-beam epitaxy Impact of III/V ratio on polytype and crystalline quality of AIN grown on 4H-SiC (1120) substrate by molecular-beam epitaxy Impact of III/V ratio on polytype and crystalline quality of AIN grown on 4H-SiC (1120) substrate by molecular-beam epitaxy PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 3, 6, 1503-1506 PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 3, 6, 1503-1506 PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 3, 6, 1503-1506 2006 英語 研究論文(国際会議プロシーディングス) 公開
Keiji Wada, Tsunenobu Kimoto, Kimito Nishikawa, Hiroyuki Matsunami Keiji Wada, Tsunenobu Kimoto, Kimito Nishikawa, Hiroyuki Matsunami Keiji Wada, Tsunenobu Kimoto, Kimito Nishikawa, Hiroyuki Matsunami Epitaxial growth of 4H-SiC on 4 degrees off-axis (0001) and (000-1) substrates by hot-wall CVD Epitaxial growth of 4H-SiC on 4 degrees off-axis (0001) and (000-1) substrates by hot-wall CVD Epitaxial growth of 4H-SiC on 4 degrees off-axis (0001) and (000-1) substrates by hot-wall CVD Silicon Carbide and Related Materials 2005, Pts 1 and 2, 527-529, 219-222 Silicon Carbide and Related Materials 2005, Pts 1 and 2, 527-529, 219-222 Silicon Carbide and Related Materials 2005, Pts 1 and 2, 527-529, 219-222 2006 英語 研究論文(国際会議プロシーディングス) 公開
K. Danno, T. Kimoto K. Danno, T. Kimoto K. Danno, T. Kimoto Deep hole traps in As-grown 4H-SiC epilayers investigated by deep level transient spectroscopy Deep hole traps in As-grown 4H-SiC epilayers investigated by deep level transient spectroscopy Deep hole traps in As-grown 4H-SiC epilayers investigated by deep level transient spectroscopy SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 527-529, 501-+ SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 527-529, 501-+ SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 527-529, 501-+ 2006 英語 研究論文(国際会議プロシーディングス) 公開
M. Noborio, J. Suda, T. Kimoto M. Noborio, J. Suda, T. Kimoto M. Noborio, J. Suda, T. Kimoto Dose designing and fabrication of 4H-SiC double RESURF MOSFETs Dose designing and fabrication of 4H-SiC double RESURF MOSFETs Dose designing and fabrication of 4H-SiC double RESURF MOSFETs PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 273-+ PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 273-+ PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 273-+ 2006 英語 研究論文(国際会議プロシーディングス) 公開
T Tomita, S Matsuo, T Okada, T Kimoto, H Matsunami, T Mitani, SI Nakashima T Tomita, S Matsuo, T Okada, T Kimoto, H Matsunami, T Mitani, SI Nakashima T Tomita, S Matsuo, T Okada, T Kimoto, H Matsunami, T Mitani, SI Nakashima Deep-ultraviolet micro-Raman investigation of surface defects in a 4H-SiC homoepitaxially grown film Deep-ultraviolet micro-Raman investigation of surface defects in a 4H-SiC homoepitaxially grown film Deep-ultraviolet micro-Raman investigation of surface defects in a 4H-SiC homoepitaxially grown film APPLIED PHYSICS LETTERS, 87, 24, 1-3 APPLIED PHYSICS LETTERS, 87, 24, 1-3 APPLIED PHYSICS LETTERS, 87, 24, 1-3 2005/12 英語 研究論文(学術雑誌) 公開
R Armitage, K Nishizono, J Suda, T Kimoto R Armitage, K Nishizono, J Suda, T Kimoto R Armitage, K Nishizono, J Suda, T Kimoto Mechanism of stabilization of zincblende GaN on hexagonal substrates: Insight gained from growth on ZrB2(0001) Mechanism of stabilization of zincblende GaN on hexagonal substrates: Insight gained from growth on ZrB2(0001) Mechanism of stabilization of zincblende GaN on hexagonal substrates: Insight gained from growth on ZrB2(0001) JOURNAL OF CRYSTAL GROWTH, 284, 3-4, 369-378 JOURNAL OF CRYSTAL GROWTH, 284, 3-4, 369-378 JOURNAL OF CRYSTAL GROWTH, 284, 3-4, 369-378 2005/11 英語 研究論文(学術雑誌) 公開
T Kimoto, H Kawano, J Suda T Kimoto, H Kawano, J Suda T Kimoto, H Kawano, J Suda 1330 V, 67 m Omega center dot cm(2) 4H-SiC(0001) RESURF MOSFET 1330 V, 67 m Omega center dot cm(2) 4H-SiC(0001) RESURF MOSFET 1330 V, 67 m Omega center dot cm(2) 4H-SiC(0001) RESURF MOSFET IEEE ELECTRON DEVICE LETTERS, 26, 9, 649-651 IEEE ELECTRON DEVICE LETTERS, 26, 9, 649-651 IEEE ELECTRON DEVICE LETTERS, 26, 9, 649-651 2005/09 英語 研究論文(学術雑誌) 公開
M Noborio, Y Kanzaki, J Suda, T Kimoto M Noborio, Y Kanzaki, J Suda, T Kimoto M Noborio, Y Kanzaki, J Suda, T Kimoto Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETs Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETs Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES, 52, 9, 1954-1962 IEEE TRANSACTIONS ON ELECTRON DEVICES, 52, 9, 1954-1962 IEEE TRANSACTIONS ON ELECTRON DEVICES, 52, 9, 1954-1962 2005/09 英語 研究論文(学術雑誌) 公開
H Fujiwara, T Kimoto, T Tojo, H Matsunami H Fujiwara, T Kimoto, T Tojo, H Matsunami H Fujiwara, T Kimoto, T Tojo, H Matsunami Characterization of in-grown stacking faults in 4H-SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes Characterization of in-grown stacking faults in 4H-SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes Characterization of in-grown stacking faults in 4H-SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes APPLIED PHYSICS LETTERS, 87, 5 APPLIED PHYSICS LETTERS, 87, 5 APPLIED PHYSICS LETTERS, 87, 5 2005/08 英語 研究論文(学術雑誌) 公開
Y Negoro, T Kimoto, H Matsunami Y Negoro, T Kimoto, H Matsunami Y Negoro, T Kimoto, H Matsunami Carrier compensation near tail region in aluminum- or boron-implanted 4H-SiC(0001) Carrier compensation near tail region in aluminum- or boron-implanted 4H-SiC(0001) Carrier compensation near tail region in aluminum- or boron-implanted 4H-SiC(0001) JOURNAL OF APPLIED PHYSICS, 98, 4 JOURNAL OF APPLIED PHYSICS, 98, 4 JOURNAL OF APPLIED PHYSICS, 98, 4 2005/08 英語 研究論文(学術雑誌) 公開
H Fujiwara, K Danno, T Kimoto, T Tojo, H Matsunami H Fujiwara, K Danno, T Kimoto, T Tojo, H Matsunami H Fujiwara, K Danno, T Kimoto, T Tojo, H Matsunami Effects of C/Si ratio in fast epitaxial growth of 4H-SIC(0001) by vertical hot-wall chemical vapor deposition Effects of C/Si ratio in fast epitaxial growth of 4H-SIC(0001) by vertical hot-wall chemical vapor deposition Effects of C/Si ratio in fast epitaxial growth of 4H-SIC(0001) by vertical hot-wall chemical vapor deposition JOURNAL OF CRYSTAL GROWTH, 281, 2-4, 370-376 JOURNAL OF CRYSTAL GROWTH, 281, 2-4, 370-376 JOURNAL OF CRYSTAL GROWTH, 281, 2-4, 370-376 2005/08 英語 研究論文(学術雑誌) 公開
Y Chen, T Kimoto, Y Takeuchi, RK Malhan, H Matsunami Y Chen, T Kimoto, Y Takeuchi, RK Malhan, H Matsunami Y Chen, T Kimoto, Y Takeuchi, RK Malhan, H Matsunami Selective embedded growth of 4H-SiC trenches in 4H-SiC(0001) substrates using carbon mask Selective embedded growth of 4H-SiC trenches in 4H-SiC(0001) substrates using carbon mask Selective embedded growth of 4H-SiC trenches in 4H-SiC(0001) substrates using carbon mask JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44, 7A, 4909-4910 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44, 7A, 4909-4910 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44, 7A, 4909-4910 2005/07 英語 研究論文(学術雑誌) 公開
K Danno, T Kimoto, K Asano, Y Sugawara, H Matsunami K Danno, T Kimoto, K Asano, Y Sugawara, H Matsunami K Danno, T Kimoto, K Asano, Y Sugawara, H Matsunami Fast epitaxial growth of high-purity 4H-SiC(000(1)over-bar) in a vertical hot-wall chemical vapor deposition Fast epitaxial growth of high-purity 4H-SiC(000(1)over-bar) in a vertical hot-wall chemical vapor deposition Fast epitaxial growth of high-purity 4H-SiC(000(1)over-bar) in a vertical hot-wall chemical vapor deposition JOURNAL OF ELECTRONIC MATERIALS, 34, 4, 324-329 JOURNAL OF ELECTRONIC MATERIALS, 34, 4, 324-329 JOURNAL OF ELECTRONIC MATERIALS, 34, 4, 324-329 2005/04 英語 研究論文(学術雑誌) 公開
T Kimoto, Y Kanzaki, M Noborio, H Kawano, H Matsunami T Kimoto, Y Kanzaki, M Noborio, H Kawano, H Matsunami T Kimoto, Y Kanzaki, M Noborio, H Kawano, H Matsunami Interface properties of metal-oxide-semiconductor structures on 4H-SiC{0001} and (112(-)over-bar) formed by N2O oxidation Interface properties of metal-oxide-semiconductor structures on 4H-SiC{0001} and (112(-)over-bar) formed by N2O oxidation Interface properties of metal-oxide-semiconductor structures on 4H-SiC{0001} and (112(-)over-bar) formed by N2O oxidation JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44, 3, 1213-1218 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44, 3, 1213-1218 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44, 3, 1213-1218 2005/03 英語 研究論文(学術雑誌) 公開
K Danno, T Kimoto, H Matsunami K Danno, T Kimoto, H Matsunami K Danno, T Kimoto, H Matsunami Midgap levels in both n- and p-type 4H-SiC epilayers investigated by deep level transient spectroscopy Midgap levels in both n- and p-type 4H-SiC epilayers investigated by deep level transient spectroscopy Midgap levels in both n- and p-type 4H-SiC epilayers investigated by deep level transient spectroscopy APPLIED PHYSICS LETTERS, 86, 12, 1-3 APPLIED PHYSICS LETTERS, 86, 12, 1-3 APPLIED PHYSICS LETTERS, 86, 12, 1-3 2005/03 英語 研究論文(学術雑誌) 公開
Tsuyoshi Funaki, Juan C. Balda, Jeremy Junghans, Anuwat Jangwanitlert, Sharmila Mounce, Fred D. Barlow, H. Alan Mantooth, Tsunenobu Kimoto, Takashi Hikihara Tsuyoshi Funaki, Juan C. Balda, Jeremy Junghans, Anuwat Jangwanitlert, Sharmila Mounce, Fred D. Barlow, H. Alan Mantooth, Tsunenobu Kimoto, Takashi Hikihara Tsuyoshi Funaki, Juan C. Balda, Jeremy Junghans, Anuwat Jangwanitlert, Sharmila Mounce, Fred D. Barlow, H. Alan Mantooth, Tsunenobu Kimoto, Takashi Hikihara Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters IEICE ELECTRONICS EXPRESS, 2, 3, 97-102 IEICE ELECTRONICS EXPRESS, 2, 3, 97-102 IEICE ELECTRONICS EXPRESS, 2, 3, 97-102 2005/02 英語 研究論文(学術雑誌) 公開
M Noborio, Y Kanzaki, J Suda, T Kimoto, H Matsunami M Noborio, Y Kanzaki, J Suda, T Kimoto, H Matsunami M Noborio, Y Kanzaki, J Suda, T Kimoto, H Matsunami Short-Channel Effects in 4H-SiC MOSFETs Short-Channel Effects in 4H-SiC MOSFETs Short-Channel Effects in 4H-SiC MOSFETs SILICON CARBIDE AND RELATED MATERIALS 2004, 483, 821-824 SILICON CARBIDE AND RELATED MATERIALS 2004, 483, 821-824 SILICON CARBIDE AND RELATED MATERIALS 2004, 483, 821-824 2005 英語 研究論文(学術雑誌) 公開
Y Negoro, T Kimoto, H Matsunami Y Negoro, T Kimoto, H Matsunami Y Negoro, T Kimoto, H Matsunami Electrical behavior of implanted aluminum and boron near tall region in 4H-SiC after high-temperature annealing Electrical behavior of implanted aluminum and boron near tall region in 4H-SiC after high-temperature annealing Electrical behavior of implanted aluminum and boron near tall region in 4H-SiC after high-temperature annealing SILICON CARBIDE AND RELATED MATERIALS 2004, 483, 617-620 SILICON CARBIDE AND RELATED MATERIALS 2004, 483, 617-620 SILICON CARBIDE AND RELATED MATERIALS 2004, 483, 617-620 2005 英語 研究論文(学術雑誌) 公開
H Kawano, T Kimoto, J Suda, H Matsunami H Kawano, T Kimoto, J Suda, H Matsunami H Kawano, T Kimoto, J Suda, H Matsunami Dose designing for high-voltage 4H-SiC RESURF MOSFETs - device simulation and fabrication Dose designing for high-voltage 4H-SiC RESURF MOSFETs - device simulation and fabrication Dose designing for high-voltage 4H-SiC RESURF MOSFETs - device simulation and fabrication SILICON CARBIDE AND RELATED MATERIALS 2004, 483, 809-812 SILICON CARBIDE AND RELATED MATERIALS 2004, 483, 809-812 SILICON CARBIDE AND RELATED MATERIALS 2004, 483, 809-812 2005 英語 研究論文(学術雑誌) 公開
A Wada, T Kimoto, K Nishikawa, H Matsunami A Wada, T Kimoto, K Nishikawa, H Matsunami A Wada, T Kimoto, K Nishikawa, H Matsunami Improved surface morphology and background doping concentration in 4H-SiC(000-1) epitaxial growth by hot-wall CVD Improved surface morphology and background doping concentration in 4H-SiC(000-1) epitaxial growth by hot-wall CVD Improved surface morphology and background doping concentration in 4H-SiC(000-1) epitaxial growth by hot-wall CVD SILICON CARBIDE AND RELATED MATERIALS 2004, 483, 85-88 SILICON CARBIDE AND RELATED MATERIALS 2004, 483, 85-88 SILICON CARBIDE AND RELATED MATERIALS 2004, 483, 85-88 2005 英語 研究論文(学術雑誌) 公開
Y Negoro, T Kimoto, H Matsunami Y Negoro, T Kimoto, H Matsunami Y Negoro, T Kimoto, H Matsunami Technological aspects of ion implantation in SiC device processes Technological aspects of ion implantation in SiC device processes Technological aspects of ion implantation in SiC device processes SILICON CARBIDE AND RELATED MATERIALS 2004, 483, 599-604 SILICON CARBIDE AND RELATED MATERIALS 2004, 483, 599-604 SILICON CARBIDE AND RELATED MATERIALS 2004, 483, 599-604 2005 英語 研究論文(学術雑誌) 公開
H Fujiwara, T Kimoto, T Tojo, H Matsunami H Fujiwara, T Kimoto, T Tojo, H Matsunami H Fujiwara, T Kimoto, T Tojo, H Matsunami Reduction of stacking faults in fast epitaxial growth of 4H-SiC and its impacts on high-voltage Schottky diodes Reduction of stacking faults in fast epitaxial growth of 4H-SiC and its impacts on high-voltage Schottky diodes Reduction of stacking faults in fast epitaxial growth of 4H-SiC and its impacts on high-voltage Schottky diodes SILICON CARBIDE AND RELATED MATERIALS 2004, 483, 151-154 SILICON CARBIDE AND RELATED MATERIALS 2004, 483, 151-154 SILICON CARBIDE AND RELATED MATERIALS 2004, 483, 151-154 2005 英語 研究論文(学術雑誌) 公開
H Saitoh, T Kimoto H Saitoh, T Kimoto H Saitoh, T Kimoto 4H-SiC epitaxial growth on SiC substrates with various off-angles 4H-SiC epitaxial growth on SiC substrates with various off-angles 4H-SiC epitaxial growth on SiC substrates with various off-angles SILICON CARBIDE AND RELATED MATERIALS 2004, 483, 89-92 SILICON CARBIDE AND RELATED MATERIALS 2004, 483, 89-92 SILICON CARBIDE AND RELATED MATERIALS 2004, 483, 89-92 2005 英語 研究論文(学術雑誌) 公開
K Danno, T Kimoto, H Matsunami K Danno, T Kimoto, H Matsunami K Danno, T Kimoto, H Matsunami Midgap levels in As-grown 4H-SiC epilayers investigated by DLTS Midgap levels in As-grown 4H-SiC epilayers investigated by DLTS Midgap levels in As-grown 4H-SiC epilayers investigated by DLTS SILICON CARBIDE AND RELATED MATERIALS 2004, 483, 355-358 SILICON CARBIDE AND RELATED MATERIALS 2004, 483, 355-358 SILICON CARBIDE AND RELATED MATERIALS 2004, 483, 355-358 2005 英語 研究論文(学術雑誌) 公開
M Kato, S Tanaka, M Ichimura, E Arai, S Nakamura, T Kimoto M Kato, S Tanaka, M Ichimura, E Arai, S Nakamura, T Kimoto M Kato, S Tanaka, M Ichimura, E Arai, S Nakamura, T Kimoto Optical-capacitance-transient spectroscopy study for deep levels in 4H-SiC epilayer grown by cold wall chemical vapor deposition Optical-capacitance-transient spectroscopy study for deep levels in 4H-SiC epilayer grown by cold wall chemical vapor deposition Optical-capacitance-transient spectroscopy study for deep levels in 4H-SiC epilayer grown by cold wall chemical vapor deposition SILICON CARBIDE AND RELATED MATERIALS 2004, 483, 381-384 SILICON CARBIDE AND RELATED MATERIALS 2004, 483, 381-384 SILICON CARBIDE AND RELATED MATERIALS 2004, 483, 381-384 2005 英語 研究論文(学術雑誌) 公開
T Kimoto, H Kosugi, J Suda, Y Kanzaki, H Matsunami T Kimoto, H Kosugi, J Suda, Y Kanzaki, H Matsunami T Kimoto, H Kosugi, J Suda, Y Kanzaki, H Matsunami Design and Fabrication of RESURF MOSFETs on 4H-SiC(0001), (1120), and 6H-SiC(0001) Design and Fabrication of RESURF MOSFETs on 4H-SiC(0001), (1120), and 6H-SiC(0001) Design and Fabrication of RESURF MOSFETs on 4H-SiC(0001), (1120), and 6H-SiC(0001) IEEE TRANSACTIONS ON ELECTRON DEVICES, 52, 1, 112-117 IEEE TRANSACTIONS ON ELECTRON DEVICES, 52, 1, 112-117 IEEE TRANSACTIONS ON ELECTRON DEVICES, 52, 1, 112-117 2005/01 英語 研究論文(学術雑誌) 公開
Y. Nakano, J. Suda, T. Kimoto Y. Nakano, J. Suda, T. Kimoto Y. Nakano, J. Suda, T. Kimoto Direct growth of GaN on off-oriented SiC (0001) by molecular-beam epitaxy for GaN/SiC heterojunction bipolar transistor Direct growth of GaN on off-oriented SiC (0001) by molecular-beam epitaxy for GaN/SiC heterojunction bipolar transistor Direct growth of GaN on off-oriented SiC (0001) by molecular-beam epitaxy for GaN/SiC heterojunction bipolar transistor Physica Status Solidi C: Conferences, 2, 7, 2208-2211 Physica Status Solidi C: Conferences, 2, 7, 2208-2211 Physica Status Solidi C: Conferences, 2, 7, 2208-2211 2005 英語 研究論文(国際会議プロシーディングス) 公開
T Kimoto, H Kawano, J Suda T Kimoto, H Kawano, J Suda T Kimoto, H Kawano, J Suda 1200 V-class 4H-SiC RIESURF MOSFETs with low on-resistances 1200 V-class 4H-SiC RIESURF MOSFETs with low on-resistances 1200 V-class 4H-SiC RIESURF MOSFETs with low on-resistances PROCEEDINGS OF THE 17TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 279-282 PROCEEDINGS OF THE 17TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 279-282 PROCEEDINGS OF THE 17TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 279-282 2005 英語 研究論文(国際会議プロシーディングス) 公開
R Armitage, K Nishizono, J Suda, T Kimoto R Armitage, K Nishizono, J Suda, T Kimoto R Armitage, K Nishizono, J Suda, T Kimoto Molecular beam epitaxy of GaN on lattice-matched ZrB2 substrates using low-temperature GaN and AlN nucleation layers Molecular beam epitaxy of GaN on lattice-matched ZrB2 substrates using low-temperature GaN and AlN nucleation layers Molecular beam epitaxy of GaN on lattice-matched ZrB2 substrates using low-temperature GaN and AlN nucleation layers GaN, AIN, InN and Their Alloys, 831, 477-482 GaN, AIN, InN and Their Alloys, 831, 477-482 GaN, AIN, InN and Their Alloys, 831, 477-482 2005 英語 研究論文(国際会議プロシーディングス) 公開
Y Negoro, T Kimoto, H Matsunami, F Schmid, G Pensl Y Negoro, T Kimoto, H Matsunami, F Schmid, G Pensl Y Negoro, T Kimoto, H Matsunami, F Schmid, G Pensl Electrical activation of high-concentration aluminum implanted in 4H-SiC Electrical activation of high-concentration aluminum implanted in 4H-SiC Electrical activation of high-concentration aluminum implanted in 4H-SiC JOURNAL OF APPLIED PHYSICS, 96, 9, 4916-4922 JOURNAL OF APPLIED PHYSICS, 96, 9, 4916-4922 JOURNAL OF APPLIED PHYSICS, 96, 9, 4916-4922 2004/11 英語 研究論文(学術雑誌) 公開
S Nakamura, T Kimoto, H Matsunami S Nakamura, T Kimoto, H Matsunami S Nakamura, T Kimoto, H Matsunami Rate-determining process in chemical vapor deposition of SiC on off-axis alpha-SiC (0001) Rate-determining process in chemical vapor deposition of SiC on off-axis alpha-SiC (0001) Rate-determining process in chemical vapor deposition of SiC on off-axis alpha-SiC (0001) JOURNAL OF CRYSTAL GROWTH, 270, 3-4, 455-461 JOURNAL OF CRYSTAL GROWTH, 270, 3-4, 455-461 JOURNAL OF CRYSTAL GROWTH, 270, 3-4, 455-461 2004/10 英語 研究論文(学術雑誌) 公開
T Okada, Y Negoro, T Kimoto, K Okamoto, N Kujime, N Tanaka, H Matsunami T Okada, Y Negoro, T Kimoto, K Okamoto, N Kujime, N Tanaka, H Matsunami T Okada, Y Negoro, T Kimoto, K Okamoto, N Kujime, N Tanaka, H Matsunami Defect formation in (0001)- and (1120)-oriented 4H-SiC crystals P+-Implanted at room temperature Defect formation in (0001)- and (1120)-oriented 4H-SiC crystals P+-Implanted at room temperature Defect formation in (0001)- and (1120)-oriented 4H-SiC crystals P+-Implanted at room temperature JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43, 10, 6884-6889 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43, 10, 6884-6889 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43, 10, 6884-6889 2004/10 英語 研究論文(学術雑誌) 公開
Y Negoro, T Kimoto, H Matsunami Y Negoro, T Kimoto, H Matsunami Y Negoro, T Kimoto, H Matsunami Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing APPLIED PHYSICS LETTERS, 85, 10, 1716-1718 APPLIED PHYSICS LETTERS, 85, 10, 1716-1718 APPLIED PHYSICS LETTERS, 85, 10, 1716-1718 2004/09 英語 研究論文(学術雑誌) 公開
Y Chen, T Kimoto, Y Takeuchi, RK Malhan, H Matsunami Y Chen, T Kimoto, Y Takeuchi, RK Malhan, H Matsunami Y Chen, T Kimoto, Y Takeuchi, RK Malhan, H Matsunami Homoepitaxy of 4H-SiC on trenched (0001) Si face substrates by chemical vapor deposition Homoepitaxy of 4H-SiC on trenched (0001) Si face substrates by chemical vapor deposition Homoepitaxy of 4H-SiC on trenched (0001) Si face substrates by chemical vapor deposition JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 43, 7A, 4105-4109 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 43, 7A, 4105-4109 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 43, 7A, 4105-4109 2004/07 英語 研究論文(学術雑誌) 公開
K Danno, K Hashimoto, H Saitoh, T Kimoto, H Matsunami K Danno, K Hashimoto, H Saitoh, T Kimoto, H Matsunami K Danno, K Hashimoto, H Saitoh, T Kimoto, H Matsunami Low-concentration deep traps in 4H-SiC grown with high growth rate by chemical vapor deposition Low-concentration deep traps in 4H-SiC grown with high growth rate by chemical vapor deposition Low-concentration deep traps in 4H-SiC grown with high growth rate by chemical vapor deposition JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 43, 7B, L969-L971 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 43, 7B, L969-L971 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 43, 7B, L969-L971 2004/07 英語 研究論文(学術雑誌) 公開
Y Negoro, K Katsumoto, T Kimoto, H Matsunami Y Negoro, K Katsumoto, T Kimoto, H Matsunami Y Negoro, K Katsumoto, T Kimoto, H Matsunami Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC(0001) Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC(0001) Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC(0001) JOURNAL OF APPLIED PHYSICS, 96, 1, 224-228 JOURNAL OF APPLIED PHYSICS, 96, 1, 224-228 JOURNAL OF APPLIED PHYSICS, 96, 1, 224-228 2004/07 英語 研究論文(学術雑誌) 公開
Y Negoro, T Kimoto, H Matsunami Y Negoro, T Kimoto, H Matsunami Y Negoro, T Kimoto, H Matsunami Robust 4H-SiC pn diodes fabricated using (1120) face Robust 4H-SiC pn diodes fabricated using (1120) face Robust 4H-SiC pn diodes fabricated using (1120) face JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43, 2, 471-476 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43, 2, 471-476 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43, 2, 471-476 2004/02 英語 研究論文(学術雑誌) 公開
Y Negoro, K Katsumoto, T Kimoto, H Matsunami Y Negoro, K Katsumoto, T Kimoto, H Matsunami Y Negoro, K Katsumoto, T Kimoto, H Matsunami Flat surface after high-temperature annealing for phosphorus-ion implanted 4H-SiC (0001) using graphite cap Flat surface after high-temperature annealing for phosphorus-ion implanted 4H-SiC (0001) using graphite cap Flat surface after high-temperature annealing for phosphorus-ion implanted 4H-SiC (0001) using graphite cap SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 457-460, II, 933-936 SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 457-460, II, 933-936 SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 457-460, II, 933-936 2004 英語 研究論文(学術雑誌) 公開
Y Kanzaki, H Kinbara, H Kosugi, J Suda, T Kimoto, H Matsunami Y Kanzaki, H Kinbara, H Kosugi, J Suda, T Kimoto, H Matsunami Y Kanzaki, H Kinbara, H Kosugi, J Suda, T Kimoto, H Matsunami High channel mobilities of MOSFETs on highly-doped 4H-SiC (11-20) face by oxidation in N2O ambient High channel mobilities of MOSFETs on highly-doped 4H-SiC (11-20) face by oxidation in N2O ambient High channel mobilities of MOSFETs on highly-doped 4H-SiC (11-20) face by oxidation in N2O ambient SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 457-460, II, 1429-1432 SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 457-460, II, 1429-1432 SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 457-460, II, 1429-1432 2004 英語 研究論文(学術雑誌) 公開
N Onojima, J Kaido, J Suda, T Kimoto, H Matsunami N Onojima, J Kaido, J Suda, T Kimoto, H Matsunami N Onojima, J Kaido, J Suda, T Kimoto, H Matsunami Towards high-quality AlN/SiC hetero-interface by controlling initial processes in molecular-beam epitaxy Towards high-quality AlN/SiC hetero-interface by controlling initial processes in molecular-beam epitaxy Towards high-quality AlN/SiC hetero-interface by controlling initial processes in molecular-beam epitaxy SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 457-460, II, 1569-1572 SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 457-460, II, 1569-1572 SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 457-460, II, 1569-1572 2004 英語 研究論文(学術雑誌) 公開
K Fujikawa, S Harada, A Ito, T Kimoto, H Matsunami K Fujikawa, S Harada, A Ito, T Kimoto, H Matsunami K Fujikawa, S Harada, A Ito, T Kimoto, H Matsunami 600V 4H-SiC RESURF-type JFET 600V 4H-SiC RESURF-type JFET 600V 4H-SiC RESURF-type JFET SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 457-460, II, 1189-1192 SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 457-460, II, 1189-1192 SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 457-460, II, 1189-1192 2004 英語 研究論文(学術雑誌) 公開
K Danno, T Kimoto, H Matsunami K Danno, T Kimoto, H Matsunami K Danno, T Kimoto, H Matsunami High-speed growth of high-purity epitaxial layers with specular surface on 4H-SiC(000-1) face High-speed growth of high-purity epitaxial layers with specular surface on 4H-SiC(000-1) face High-speed growth of high-purity epitaxial layers with specular surface on 4H-SiC(000-1) face SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 457-460, I, 197-200 SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 457-460, I, 197-200 SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 457-460, I, 197-200 2004 英語 研究論文(学術雑誌) 公開
Y. Chen, T. Kimoto, Y. Takeuchi, R.K. Malhan, H. Matsunami Y. Chen, T. Kimoto, Y. Takeuchi, R.K. Malhan, H. Matsunami Y. Chen, T. Kimoto, Y. Takeuchi, R.K. Malhan, H. Matsunami Homoepltaxlal growth of 4H-SiC on trenched substrates by chemical vapor deposition Homoepltaxlal growth of 4H-SiC on trenched substrates by chemical vapor deposition Homoepltaxlal growth of 4H-SiC on trenched substrates by chemical vapor deposition Materials Science Forum, 457-460, I, 189-192 Materials Science Forum, 457-460, I, 189-192 Materials Science Forum, 457-460, I, 189-192 2004 英語 公開
J Kaido, T Kimoto, J Suda, H Matsunami J Kaido, T Kimoto, J Suda, H Matsunami J Kaido, T Kimoto, J Suda, H Matsunami 4H-SiC MOSFETs with a novel channel structure (sandwiched channel MOSFET) 4H-SiC MOSFETs with a novel channel structure (sandwiched channel MOSFET) 4H-SiC MOSFETs with a novel channel structure (sandwiched channel MOSFET) SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 457-460, II, 1409-1412 SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 457-460, II, 1409-1412 SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 457-460, II, 1409-1412 2004 英語 研究論文(学術雑誌) 公開
HS Saitoh, T Kimoto, H Matsunami HS Saitoh, T Kimoto, H Matsunami HS Saitoh, T Kimoto, H Matsunami Origin of leakage current in SiC Schottky barrier diodes at high temperature Origin of leakage current in SiC Schottky barrier diodes at high temperature Origin of leakage current in SiC Schottky barrier diodes at high temperature SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 457-460, II, 997-1000 SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 457-460, II, 997-1000 SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 457-460, II, 997-1000 2004 英語 研究論文(学術雑誌) 公開
Y Negoro, K Katsumoto, T Kimoto, H Matsunami, F Schmid, G Pensl Y Negoro, K Katsumoto, T Kimoto, H Matsunami, F Schmid, G Pensl Y Negoro, K Katsumoto, T Kimoto, H Matsunami, F Schmid, G Pensl Low sheet resistance of high-dose aluminum implanted 4H-SiC using (11-20) face Low sheet resistance of high-dose aluminum implanted 4H-SiC using (11-20) face Low sheet resistance of high-dose aluminum implanted 4H-SiC using (11-20) face SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 457-460, II, 913-916 SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 457-460, II, 913-916 SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 457-460, II, 913-916 2004 英語 研究論文(学術雑誌) 公開
H Fujiwara, K Danno, T Kimoto, T Tojo, H Matsunami H Fujiwara, K Danno, T Kimoto, T Tojo, H Matsunami H Fujiwara, K Danno, T Kimoto, T Tojo, H Matsunami Fast epitaxial growth of thick 4H-SiC with specular surface by chimney-type vertical hot-wall chemical vapor deposition Fast epitaxial growth of thick 4H-SiC with specular surface by chimney-type vertical hot-wall chemical vapor deposition Fast epitaxial growth of thick 4H-SiC with specular surface by chimney-type vertical hot-wall chemical vapor deposition SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460, I, 205-208 SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460, I, 205-208 SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460, I, 205-208 2004 英語 研究論文(学術雑誌) 公開
T Okada, T Kimoto, K Yamai, H Matsunami, F Inoko T Okada, T Kimoto, K Yamai, H Matsunami, F Inoko T Okada, T Kimoto, K Yamai, H Matsunami, F Inoko Crystallographic defects under surface morphological defects of 4H-SiC homoepitaxial films Crystallographic defects under surface morphological defects of 4H-SiC homoepitaxial films Crystallographic defects under surface morphological defects of 4H-SiC homoepitaxial films SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 457-460, I, 521-524 SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 457-460, I, 521-524 SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 457-460, I, 521-524 2004 英語 研究論文(学術雑誌) 公開
Shun-Ichi Nakamura, Tsunenobu Kimoto, Hiroyuki Matsunami Shun-Ichi Nakamura, Tsunenobu Kimoto, Hiroyuki Matsunami Shun-Ichi Nakamura, Tsunenobu Kimoto, Hiroyuki Matsunami Homoepitaxial growth on 4H-SiC {0001}-vicinal faces Homoepitaxial growth on 4H-SiC {0001}-vicinal faces Homoepitaxial growth on 4H-SiC {0001}-vicinal faces Zairyo/Journal of the Society of Materials Science, Japan, 53, 12, 1323-1327 Zairyo/Journal of the Society of Materials Science, Japan, 53, 12, 1323-1327 Zairyo/Journal of the Society of Materials Science, Japan, 53, 12, 1323-1327 2004 日本語 研究論文(学術雑誌) 公開
Tsuyoshi Funaki, Takashi Hikihara, Tsunenobu Kimoto, Juan C. Balda, Jeremy Junghans, Avinash S. Kashyap, Fred D. Barlow, H. Alan Mantooth Tsuyoshi Funaki, Takashi Hikihara, Tsunenobu Kimoto, Juan C. Balda, Jeremy Junghans, Avinash S. Kashyap, Fred D. Barlow, H. Alan Mantooth Tsuyoshi Funaki, Takashi Hikihara, Tsunenobu Kimoto, Juan C. Balda, Jeremy Junghans, Avinash S. Kashyap, Fred D. Barlow, H. Alan Mantooth SiC JFET dc characteristics under extremely high ambient temperatures SiC JFET dc characteristics under extremely high ambient temperatures SiC JFET dc characteristics under extremely high ambient temperatures IEICE Electronics Express, 1, 17, 523-527 IEICE Electronics Express, 1, 17, 523-527 IEICE Electronics Express, 1, 17, 523-527 2004 英語 研究論文(学術雑誌) 公開
S Nakamura, T Kimoto, H Matsunami S Nakamura, T Kimoto, H Matsunami S Nakamura, T Kimoto, H Matsunami Surface mechanisms in homoepitaxial growth on alpha-SiC {0001}-vicinal faces Surface mechanisms in homoepitaxial growth on alpha-SiC {0001}-vicinal faces Surface mechanisms in homoepitaxial growth on alpha-SiC {0001}-vicinal faces SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460, 163-168 SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460, 163-168 SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460, 163-168 2004 英語 研究論文(学術雑誌) 公開
T Kimoto, K Hashimoto, H Matsunami T Kimoto, K Hashimoto, H Matsunami T Kimoto, K Hashimoto, H Matsunami Effects of C/Si ratio in chemical vapor deposition of 4H-SiC(11(2)over-bar0) and (03(3)over-bar8) Effects of C/Si ratio in chemical vapor deposition of 4H-SiC(11(2)over-bar0) and (03(3)over-bar8) Effects of C/Si ratio in chemical vapor deposition of 4H-SiC(11(2)over-bar0) and (03(3)over-bar8) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42, 12, 7294-7295 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42, 12, 7294-7295 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42, 12, 7294-7295 2003/12 英語 研究論文(学術雑誌) 公開
N Onojima, J Suda, T Kimoto, H Matsunami N Onojima, J Suda, T Kimoto, H Matsunami N Onojima, J Suda, T Kimoto, H Matsunami 4H-polytype AlN grown on 4H-SiC(11(2)over-bar0) substrate by polytype replication 4H-polytype AlN grown on 4H-SiC(11(2)over-bar0) substrate by polytype replication 4H-polytype AlN grown on 4H-SiC(11(2)over-bar0) substrate by polytype replication APPLIED PHYSICS LETTERS, 83, 25, 5208-5210 APPLIED PHYSICS LETTERS, 83, 25, 5208-5210 APPLIED PHYSICS LETTERS, 83, 25, 5208-5210 2003/12 英語 研究論文(学術雑誌) 公開
T Okada, T Kimoto, K Yamai, H Matsunami, F Inoko T Okada, T Kimoto, K Yamai, H Matsunami, F Inoko T Okada, T Kimoto, K Yamai, H Matsunami, F Inoko Crystallographic defects under device-killing surface faults in a homoepitaxially grown film of SiC Crystallographic defects under device-killing surface faults in a homoepitaxially grown film of SiC Crystallographic defects under device-killing surface faults in a homoepitaxially grown film of SiC MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 361, 1-2, 67-74 MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 361, 1-2, 67-74 MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 361, 1-2, 67-74 2003/11 英語 研究論文(学術雑誌) 公開
H Matsunami, T Kimoto, H Yano H Matsunami, T Kimoto, H Yano H Matsunami, T Kimoto, H Yano Hetero-interface properties of SiO2/4H-SiC on various crystal orientations Hetero-interface properties of SiO2/4H-SiC on various crystal orientations Hetero-interface properties of SiO2/4H-SiC on various crystal orientations IEICE TRANSACTIONS ON ELECTRONICS, E86C, 10, 1943-1948 IEICE TRANSACTIONS ON ELECTRONICS, E86C, 10, 1943-1948 IEICE TRANSACTIONS ON ELECTRONICS, E86C, 10, 1943-1948 2003/10 英語 研究論文(学術雑誌) 公開
S Nakamura, T Kimoto, H Matsunami S Nakamura, T Kimoto, H Matsunami S Nakamura, T Kimoto, H Matsunami Homoepitaxy of 6H-SiC on nearly on-axis (0001) faces by chemical vapor deposition Part II: Evolution of surface steps Homoepitaxy of 6H-SiC on nearly on-axis (0001) faces by chemical vapor deposition Part II: Evolution of surface steps Homoepitaxy of 6H-SiC on nearly on-axis (0001) faces by chemical vapor deposition Part II: Evolution of surface steps JOURNAL OF CRYSTAL GROWTH, 256, 3-4, 347-351 JOURNAL OF CRYSTAL GROWTH, 256, 3-4, 347-351 JOURNAL OF CRYSTAL GROWTH, 256, 3-4, 347-351 2003/09 英語 研究論文(学術雑誌) 公開
S Nakamura, T Kimoto, H Matsunami S Nakamura, T Kimoto, H Matsunami S Nakamura, T Kimoto, H Matsunami Homoepitaxy of 6H-SiC on nearly on-axis (0001) faces by chemical vapor deposition Part I: Effect of C/Si ratio on wide-area homoepitaxy without 3C-SiC inclusions Homoepitaxy of 6H-SiC on nearly on-axis (0001) faces by chemical vapor deposition Part I: Effect of C/Si ratio on wide-area homoepitaxy without 3C-SiC inclusions Homoepitaxy of 6H-SiC on nearly on-axis (0001) faces by chemical vapor deposition Part I: Effect of C/Si ratio on wide-area homoepitaxy without 3C-SiC inclusions JOURNAL OF CRYSTAL GROWTH, 256, 3-4, 341-346 JOURNAL OF CRYSTAL GROWTH, 256, 3-4, 341-346 JOURNAL OF CRYSTAL GROWTH, 256, 3-4, 341-346 2003/09 英語 研究論文(学術雑誌) 公開
S Nakamura, T Kimoto, H Matsunami S Nakamura, T Kimoto, H Matsunami S Nakamura, T Kimoto, H Matsunami Effect of C/Si ratio on spiral growth on 6H-SiC (0001) Effect of C/Si ratio on spiral growth on 6H-SiC (0001) Effect of C/Si ratio on spiral growth on 6H-SiC (0001) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42, 7B, L846-L848 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42, 7B, L846-L848 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42, 7B, L846-L848 2003/07 英語 研究論文(学術雑誌) 公開
K Fujihira, T Kimoto, H Matsunami K Fujihira, T Kimoto, H Matsunami K Fujihira, T Kimoto, H Matsunami Growth and characterization of 4H-SiC in vertical hot-wall chemical vapor deposition Growth and characterization of 4H-SiC in vertical hot-wall chemical vapor deposition Growth and characterization of 4H-SiC in vertical hot-wall chemical vapor deposition JOURNAL OF CRYSTAL GROWTH, 255, 1-2, 136-144 JOURNAL OF CRYSTAL GROWTH, 255, 1-2, 136-144 JOURNAL OF CRYSTAL GROWTH, 255, 1-2, 136-144 2003/07 英語 研究論文(学術雑誌) 公開
Y Chen, T Kimoto, Y Takeuchi, H Matsunami Y Chen, T Kimoto, Y Takeuchi, H Matsunami Y Chen, T Kimoto, Y Takeuchi, H Matsunami Homoepitaxial mesa structures on 4H-SiC (0001) and (11(2)over-bar-0) substrates by chemical vapor deposition Homoepitaxial mesa structures on 4H-SiC (0001) and (11(2)over-bar-0) substrates by chemical vapor deposition Homoepitaxial mesa structures on 4H-SiC (0001) and (11(2)over-bar-0) substrates by chemical vapor deposition JOURNAL OF CRYSTAL GROWTH, 254, 1-2, 115-122 JOURNAL OF CRYSTAL GROWTH, 254, 1-2, 115-122 JOURNAL OF CRYSTAL GROWTH, 254, 1-2, 115-122 2003/06 英語 研究論文(学術雑誌) 公開
T Kimoto, T Hirao, K Fujihira, H Kosugi, K Danno, H Matsunami T Kimoto, T Hirao, K Fujihira, H Kosugi, K Danno, H Matsunami T Kimoto, T Hirao, K Fujihira, H Kosugi, K Danno, H Matsunami Epitaxial growth of 4H-SiC(0 3 (3)over-bar 8) and control of MOS interface Epitaxial growth of 4H-SiC(0 3 (3)over-bar 8) and control of MOS interface Epitaxial growth of 4H-SiC(0 3 (3)over-bar 8) and control of MOS interface APPLIED SURFACE SCIENCE, 216, 1-4, 497-501 APPLIED SURFACE SCIENCE, 216, 1-4, 497-501 APPLIED SURFACE SCIENCE, 216, 1-4, 497-501 2003/06 英語 研究論文(学術雑誌) 公開
M Miura, S Nakamura, J Suda, T Kimoto, H Matsunami M Miura, S Nakamura, J Suda, T Kimoto, H Matsunami M Miura, S Nakamura, J Suda, T Kimoto, H Matsunami Fabrication of SiC lateral super junction diodes with multiple stacking p- and n-layers Fabrication of SiC lateral super junction diodes with multiple stacking p- and n-layers Fabrication of SiC lateral super junction diodes with multiple stacking p- and n-layers IEEE ELECTRON DEVICE LETTERS, 24, 5, 321-323 IEEE ELECTRON DEVICE LETTERS, 24, 5, 321-323 IEEE ELECTRON DEVICE LETTERS, 24, 5, 321-323 2003/05 英語 研究論文(学術雑誌) 公開
T Kimoto, T Hirao, S Nakazawa, H Shiomi, H Matsunami T Kimoto, T Hirao, S Nakazawa, H Shiomi, H Matsunami T Kimoto, T Hirao, S Nakazawa, H Shiomi, H Matsunami Homoepitaxial growth of 4H-SiC(0 3 (3)over-bar-8) and nitrogen doping by chemical vapor deposition Homoepitaxial growth of 4H-SiC(0 3 (3)over-bar-8) and nitrogen doping by chemical vapor deposition Homoepitaxial growth of 4H-SiC(0 3 (3)over-bar-8) and nitrogen doping by chemical vapor deposition JOURNAL OF CRYSTAL GROWTH, 249, 1-2, 208-215 JOURNAL OF CRYSTAL GROWTH, 249, 1-2, 208-215 JOURNAL OF CRYSTAL GROWTH, 249, 1-2, 208-215 2003/02 英語 研究論文(学術雑誌) 公開
A. Schöner, K. Fujihira, T. Kimoto, H. Matsunami A. Schöner, K. Fujihira, T. Kimoto, H. Matsunami A. Schöner, K. Fujihira, T. Kimoto, H. Matsunami High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers Materials Science Forum, 433-436, 387-390 Materials Science Forum, 433-436, 387-390 Materials Science Forum, 433-436, 387-390 2003 英語 公開
T. Kimoto, K. Danno, K. Fujihira, H. Shiomi, H. Matsunami T. Kimoto, K. Danno, K. Fujihira, H. Shiomi, H. Matsunami T. Kimoto, K. Danno, K. Fujihira, H. Shiomi, H. Matsunami Complete Micropipe Dissociation in 4H-SiC(033̄8) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes Complete Micropipe Dissociation in 4H-SiC(033̄8) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes Complete Micropipe Dissociation in 4H-SiC(033̄8) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes Materials Science Forum, 433-436, 197-200 Materials Science Forum, 433-436, 197-200 Materials Science Forum, 433-436, 197-200 2003 英語 公開
S.-I. Nakamura, T. Kimoto, H. Matsunami S.-I. Nakamura, T. Kimoto, H. Matsunami S.-I. Nakamura, T. Kimoto, H. Matsunami Wide-Area Homoepltaxial Growth of 6H-SiC on Nearly On-Axis (0001) by Chemical Vapor Deposition Wide-Area Homoepltaxial Growth of 6H-SiC on Nearly On-Axis (0001) by Chemical Vapor Deposition Wide-Area Homoepltaxial Growth of 6H-SiC on Nearly On-Axis (0001) by Chemical Vapor Deposition Materials Science Forum, 433-436, 149-152 Materials Science Forum, 433-436, 149-152 Materials Science Forum, 433-436, 149-152 2003 英語 公開
H. Saitoh, T. Kimoto, H. Matsunami H. Saitoh, T. Kimoto, H. Matsunami H. Saitoh, T. Kimoto, H. Matsunami Uniformity Improvement in SiC Epitaxial Growth by Horizontal Hot-Wall CVD Uniformity Improvement in SiC Epitaxial Growth by Horizontal Hot-Wall CVD Uniformity Improvement in SiC Epitaxial Growth by Horizontal Hot-Wall CVD Materials Science Forum, 433-436, 185-188 Materials Science Forum, 433-436, 185-188 Materials Science Forum, 433-436, 185-188 2003 英語 公開
H. Matsunami, T. Kimoto H. Matsunami, T. Kimoto H. Matsunami, T. Kimoto SiC Epitaxy on Non-Standard Surfaces SiC Epitaxy on Non-Standard Surfaces SiC Epitaxy on Non-Standard Surfaces Materials Science Forum, 433-436, 125-130 Materials Science Forum, 433-436, 125-130 Materials Science Forum, 433-436, 125-130 2003 英語 公開
M. Miura, S.-I. Nakamura, J. Suda, T. Kimoto, H. Matsunami M. Miura, S.-I. Nakamura, J. Suda, T. Kimoto, H. Matsunami M. Miura, S.-I. Nakamura, J. Suda, T. Kimoto, H. Matsunami SiC Lateral Super-Junction Diodes Fabricated by Epitaxial Growth SiC Lateral Super-Junction Diodes Fabricated by Epitaxial Growth SiC Lateral Super-Junction Diodes Fabricated by Epitaxial Growth Materials Science Forum, 433-436, 859-862 Materials Science Forum, 433-436, 859-862 Materials Science Forum, 433-436, 859-862 2003 英語 公開
T Kimoto, K Fujimiza, H Shiomi, H Matsunami T Kimoto, K Fujimiza, H Shiomi, H Matsunami T Kimoto, K Fujimiza, H Shiomi, H Matsunami High-voltage 4H-SiC Schottky barrier diodes fabricated on (03(3)over-bar8) with closed micropipes High-voltage 4H-SiC Schottky barrier diodes fabricated on (03(3)over-bar8) with closed micropipes High-voltage 4H-SiC Schottky barrier diodes fabricated on (03(3)over-bar8) with closed micropipes JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42, 1A-B, L13-L16 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42, 1A-B, L13-L16 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42, 1A-B, L13-L16 2003/01 英語 研究論文(学術雑誌) 公開
Y Negoro, T Kimoto, H Matsunami Y Negoro, T Kimoto, H Matsunami Y Negoro, T Kimoto, H Matsunami High-voltage 4H-SiC pn diodes fabricated by p-type ion implantation High-voltage 4H-SiC pn diodes fabricated by p-type ion implantation High-voltage 4H-SiC pn diodes fabricated by p-type ion implantation ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 86, 12, 44-51 ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 86, 12, 44-51 ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 86, 12, 44-51 2003 英語 研究論文(学術雑誌) 公開
N. Onojima, J. Suda, T. Kimoto, H. Matsunami N. Onojima, J. Suda, T. Kimoto, H. Matsunami N. Onojima, J. Suda, T. Kimoto, H. Matsunami Impact of SiC surface control on initial growth mode and crystalline quality of AlN grown by molecular-beam epitaxy Impact of SiC surface control on initial growth mode and crystalline quality of AlN grown by molecular-beam epitaxy Impact of SiC surface control on initial growth mode and crystalline quality of AlN grown by molecular-beam epitaxy Physica Status Solidi C: Conferences, 7, 2529-2532 Physica Status Solidi C: Conferences, 7, 2529-2532 Physica Status Solidi C: Conferences, 7, 2529-2532 2003 英語 研究論文(国際会議プロシーディングス) 公開
N. Onojima, J. Suda, T. Kimoto, H. Matsunami N. Onojima, J. Suda, T. Kimoto, H. Matsunami N. Onojima, J. Suda, T. Kimoto, H. Matsunami Growth of high-quality non-polar AlN on 4H-SiC(11-20) substrate by molecular-beam epitaxy Growth of high-quality non-polar AlN on 4H-SiC(11-20) substrate by molecular-beam epitaxy Growth of high-quality non-polar AlN on 4H-SiC(11-20) substrate by molecular-beam epitaxy Physica Status Solidi C: Conferences, 7, 2502-2505 Physica Status Solidi C: Conferences, 7, 2502-2505 Physica Status Solidi C: Conferences, 7, 2502-2505 2003 英語 研究論文(国際会議プロシーディングス) 公開
H Yano, T Hirao, T Kimoto, H Matsunami, H Shiomi H Yano, T Hirao, T Kimoto, H Matsunami, H Shiomi H Yano, T Hirao, T Kimoto, H Matsunami, H Shiomi Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(03(3)over-bar8) Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(03(3)over-bar8) Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(03(3)over-bar8) APPLIED PHYSICS LETTERS, 81, 25, 4772-4774 APPLIED PHYSICS LETTERS, 81, 25, 4772-4774 APPLIED PHYSICS LETTERS, 81, 25, 4772-4774 2002/12 英語 研究論文(学術雑誌) 公開
T Okada, T Kimoto, H Noda, T Ebisui, H Matsunami, F Inoko T Okada, T Kimoto, H Noda, T Ebisui, H Matsunami, F Inoko T Okada, T Kimoto, H Noda, T Ebisui, H Matsunami, F Inoko Correspondence between surface morphological faults and crystallographic defects in 4H-SiC homoepitaxial film Correspondence between surface morphological faults and crystallographic defects in 4H-SiC homoepitaxial film Correspondence between surface morphological faults and crystallographic defects in 4H-SiC homoepitaxial film JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 41, 11A, 6320-6326 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 41, 11A, 6320-6326 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 41, 11A, 6320-6326 2002/11 英語 研究論文(学術雑誌) 公開
Y Negoro, N Miyamoto, T Kimoto, H Matsunami Y Negoro, N Miyamoto, T Kimoto, H Matsunami Y Negoro, N Miyamoto, T Kimoto, H Matsunami Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation IEEE TRANSACTIONS ON ELECTRON DEVICES, 49, 9, 1505-1510 IEEE TRANSACTIONS ON ELECTRON DEVICES, 49, 9, 1505-1510 IEEE TRANSACTIONS ON ELECTRON DEVICES, 49, 9, 1505-1510 2002/09 英語 研究論文(学術雑誌) 公開
H Yano, T Kimoto, H Matsunami H Yano, T Kimoto, H Matsunami H Yano, T Kimoto, H Matsunami Shallow states at SiO2/4H-SiC interface on (11(2)over-bar-0) and (0001) faces Shallow states at SiO2/4H-SiC interface on (11(2)over-bar-0) and (0001) faces Shallow states at SiO2/4H-SiC interface on (11(2)over-bar-0) and (0001) faces APPLIED PHYSICS LETTERS, 81, 2, 301-303 APPLIED PHYSICS LETTERS, 81, 2, 301-303 APPLIED PHYSICS LETTERS, 81, 2, 301-303 2002/07 英語 研究論文(学術雑誌) 公開
S Nakamura, H Kumagai, T Kimoto, H Matsunami S Nakamura, H Kumagai, T Kimoto, H Matsunami S Nakamura, H Kumagai, T Kimoto, H Matsunami Anisotropy in breakdown field of 4H-SiC Anisotropy in breakdown field of 4H-SiC Anisotropy in breakdown field of 4H-SiC APPLIED PHYSICS LETTERS, 80, 18, 3355-3357 APPLIED PHYSICS LETTERS, 80, 18, 3355-3357 APPLIED PHYSICS LETTERS, 80, 18, 3355-3357 2002/05 英語 研究論文(学術雑誌) 公開
S Nakamura, T Kimoto, H Matsunami S Nakamura, T Kimoto, H Matsunami S Nakamura, T Kimoto, H Matsunami High-sensitivity analysis of Z(1) center concentration in 4H-SiC grown by horizontal cold-wall chemical vapor deposition High-sensitivity analysis of Z(1) center concentration in 4H-SiC grown by horizontal cold-wall chemical vapor deposition High-sensitivity analysis of Z(1) center concentration in 4H-SiC grown by horizontal cold-wall chemical vapor deposition JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 41, 5A, 2987-2988 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 41, 5A, 2987-2988 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 41, 5A, 2987-2988 2002/05 英語 研究論文(学術雑誌) 公開
T Kimoto, N Miyamoto, A Schoner, A Saitoh, H Matsunami, K Asano, Y Sugawara T Kimoto, N Miyamoto, A Schoner, A Saitoh, H Matsunami, K Asano, Y Sugawara T Kimoto, N Miyamoto, A Schoner, A Saitoh, H Matsunami, K Asano, Y Sugawara High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes JOURNAL OF APPLIED PHYSICS, 91, 7, 4242-4248 JOURNAL OF APPLIED PHYSICS, 91, 7, 4242-4248 JOURNAL OF APPLIED PHYSICS, 91, 7, 4242-4248 2002/04 英語 研究論文(学術雑誌) 公開
Y Chen, T Kimoto, Y Takeuchi, H Matsunami Y Chen, T Kimoto, Y Takeuchi, H Matsunami Y Chen, T Kimoto, Y Takeuchi, H Matsunami Selective homoepitaxy of 4H-SiC on (0001) and (1 1 (2)over-bar 0) masked substrates Selective homoepitaxy of 4H-SiC on (0001) and (1 1 (2)over-bar 0) masked substrates Selective homoepitaxy of 4H-SiC on (0001) and (1 1 (2)over-bar 0) masked substrates JOURNAL OF CRYSTAL GROWTH, 237, 1-4 II, 1224-1229 JOURNAL OF CRYSTAL GROWTH, 237, 1-4 II, 1224-1229 JOURNAL OF CRYSTAL GROWTH, 237, 1-4 II, 1224-1229 2002/04 英語 研究論文(学術雑誌) 公開
S Nakazawa, T Kimoto, K Hashimoto, H Matsunami S Nakazawa, T Kimoto, K Hashimoto, H Matsunami S Nakazawa, T Kimoto, K Hashimoto, H Matsunami High-purity 4H-SiC epitaxial growth by hot-wall chemical vapor deposition High-purity 4H-SiC epitaxial growth by hot-wall chemical vapor deposition High-purity 4H-SiC epitaxial growth by hot-wall chemical vapor deposition JOURNAL OF CRYSTAL GROWTH, 237, 1-4 II, 1213-1218 JOURNAL OF CRYSTAL GROWTH, 237, 1-4 II, 1213-1218 JOURNAL OF CRYSTAL GROWTH, 237, 1-4 II, 1213-1218 2002/04 英語 研究論文(学術雑誌) 公開
K Fujihira, T Kimoto, H Matsunami K Fujihira, T Kimoto, H Matsunami K Fujihira, T Kimoto, H Matsunami High-purity and high-quality 4H-SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition High-purity and high-quality 4H-SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition High-purity and high-quality 4H-SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition APPLIED PHYSICS LETTERS, 80, 9, 1586-1588 APPLIED PHYSICS LETTERS, 80, 9, 1586-1588 APPLIED PHYSICS LETTERS, 80, 9, 1586-1588 2002/03 英語 研究論文(学術雑誌) 公開
SI Nakamura, H Kumagai, T Kimoto, H Matsunami SI Nakamura, H Kumagai, T Kimoto, H Matsunami SI Nakamura, H Kumagai, T Kimoto, H Matsunami Breakdown fields along various crystal orientations in 4H-, 6H- and 3C-SiC Breakdown fields along various crystal orientations in 4H-, 6H- and 3C-SiC Breakdown fields along various crystal orientations in 4H-, 6H- and 3C-SiC SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 1, 651-654 SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 1, 651-654 SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 1, 651-654 2002 英語 研究論文(学術雑誌) 公開
J Suda, S Nakamura, M Miura, T Kimoto, H Matsunami J Suda, S Nakamura, M Miura, T Kimoto, H Matsunami J Suda, S Nakamura, M Miura, T Kimoto, H Matsunami Scanning capacitance microscopy of SiC multiple PN junction structure grown by cold-wall chemical vapor deposition Scanning capacitance microscopy of SiC multiple PN junction structure grown by cold-wall chemical vapor deposition Scanning capacitance microscopy of SiC multiple PN junction structure grown by cold-wall chemical vapor deposition SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 1, 659-662 SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 1, 659-662 SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 1, 659-662 2002 英語 研究論文(学術雑誌) 公開
S Nakamura, T Kimoto, H Matsunami S Nakamura, T Kimoto, H Matsunami S Nakamura, T Kimoto, H Matsunami Fast growth and doping characteristics of alpha-SiC in horizontal cold-wall chemical vapor deposition Fast growth and doping characteristics of alpha-SiC in horizontal cold-wall chemical vapor deposition Fast growth and doping characteristics of alpha-SiC in horizontal cold-wall chemical vapor deposition SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 1, 183-186 SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 1, 183-186 SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 1, 183-186 2002 英語 研究論文(学術雑誌) 公開
T Kimoto, S Nakazawa, K Fujihira, T Hirao, S Nakamura, Y Chen, K Hashimoto, H Matsunami T Kimoto, S Nakazawa, K Fujihira, T Hirao, S Nakamura, Y Chen, K Hashimoto, H Matsunami T Kimoto, S Nakazawa, K Fujihira, T Hirao, S Nakamura, Y Chen, K Hashimoto, H Matsunami Recent achievements and future challenges in SiC homoepitaxial growth Recent achievements and future challenges in SiC homoepitaxial growth Recent achievements and future challenges in SiC homoepitaxial growth SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 1, 165-170 SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 1, 165-170 SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 1, 165-170 2002 英語 研究論文(学術雑誌) 公開
J Suda, S Nakamura, M Miura, T Kimoto, H Matsunami J Suda, S Nakamura, M Miura, T Kimoto, H Matsunami J Suda, S Nakamura, M Miura, T Kimoto, H Matsunami Scanning capacitance and spreading resistance microscopy of SiC multiple-pn-junction structure Scanning capacitance and spreading resistance microscopy of SiC multiple-pn-junction structure Scanning capacitance and spreading resistance microscopy of SiC multiple-pn-junction structure JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 41, 1AB, L40-L42 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 41, 1AB, L40-L42 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 41, 1AB, L40-L42 2002/01 英語 研究論文(学術雑誌) 公開
T Hirao, H Yano, T Kimoto, H Matsunami, H Shiomi T Hirao, H Yano, T Kimoto, H Matsunami, H Shiomi T Hirao, H Yano, T Kimoto, H Matsunami, H Shiomi 4H-SiC MOSFETs on (03(3)over-bar8) face 4H-SiC MOSFETs on (03(3)over-bar8) face 4H-SiC MOSFETs on (03(3)over-bar8) face SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 2, 1065-1068 SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 2, 1065-1068 SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 2, 1065-1068 2002 英語 研究論文(学術雑誌) 公開
Y Negoro, N Miyamoto, T Kimoto, H Matsunami Y Negoro, N Miyamoto, T Kimoto, H Matsunami Y Negoro, N Miyamoto, T Kimoto, H Matsunami Phosphorus ion implantation into 4H-SiC (0001) and (11(2)over-bar0) Phosphorus ion implantation into 4H-SiC (0001) and (11(2)over-bar0) Phosphorus ion implantation into 4H-SiC (0001) and (11(2)over-bar0) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 2, 783-786 SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 2, 783-786 SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 2, 783-786 2002 英語 研究論文(学術雑誌) 公開
Y Negoro, N Miyamoto, T Kimoto, H Matsunami Y Negoro, N Miyamoto, T Kimoto, H Matsunami Y Negoro, N Miyamoto, T Kimoto, H Matsunami High-voltage SiC pn diodes with avalanche breakdown fabricated by aluminum or boron ion implantation High-voltage SiC pn diodes with avalanche breakdown fabricated by aluminum or boron ion implantation High-voltage SiC pn diodes with avalanche breakdown fabricated by aluminum or boron ion implantation SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 2, 1273-1276 SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 2, 1273-1276 SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 2, 1273-1276 2002 英語 研究論文(学術雑誌) 公開
O Shigiltchoff, T Kimoto, D Hobgood, PG Neudeck, LM Porter, RP Devaty, WJ Choyke O Shigiltchoff, T Kimoto, D Hobgood, PG Neudeck, LM Porter, RP Devaty, WJ Choyke O Shigiltchoff, T Kimoto, D Hobgood, PG Neudeck, LM Porter, RP Devaty, WJ Choyke Schottky barriers for Pt on 6H-and 4H-SiC (0001), (000(1)over-bar), (1(1)over-bar00) and (1(2)over-bar10) faces measured by I-V, C-V and internal photoemission Schottky barriers for Pt on 6H-and 4H-SiC (0001), (000(1)over-bar), (1(1)over-bar00) and (1(2)over-bar10) faces measured by I-V, C-V and internal photoemission Schottky barriers for Pt on 6H-and 4H-SiC (0001), (000(1)over-bar), (1(1)over-bar00) and (1(2)over-bar10) faces measured by I-V, C-V and internal photoemission SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 2, 921-924 SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 2, 921-924 SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 2, 921-924 2002 英語 研究論文(学術雑誌) 公開
Q Wahab, H Kosugi, H Yano, C Hallin, T Kimoto, H Matsunami Q Wahab, H Kosugi, H Yano, C Hallin, T Kimoto, H Matsunami Q Wahab, H Kosugi, H Yano, C Hallin, T Kimoto, H Matsunami 4H-and 6H-SiC MOSFETs fabricated on sloped sidewalls formed by molten KOH etching 4H-and 6H-SiC MOSFETs fabricated on sloped sidewalls formed by molten KOH etching 4H-and 6H-SiC MOSFETs fabricated on sloped sidewalls formed by molten KOH etching SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 2, 1215-1218 SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 2, 1215-1218 SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 2, 1215-1218 2002 英語 研究論文(学術雑誌) 公開
S Bai, G Wagner, E Shishkin, WJ Choyke, RP Devaty, M Zhang, P Pirouz, T Kimoto S Bai, G Wagner, E Shishkin, WJ Choyke, RP Devaty, M Zhang, P Pirouz, T Kimoto S Bai, G Wagner, E Shishkin, WJ Choyke, RP Devaty, M Zhang, P Pirouz, T Kimoto Spectra associated with stacking faults in 4H-SiC grown in a hot-wall CVD reactor Spectra associated with stacking faults in 4H-SiC grown in a hot-wall CVD reactor Spectra associated with stacking faults in 4H-SiC grown in a hot-wall CVD reactor SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 1, 589-592 SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 1, 589-592 SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 1, 589-592 2002 英語 研究論文(学術雑誌) 公開
K Fujihira, T Kimoto, H Matsunami K Fujihira, T Kimoto, H Matsunami K Fujihira, T Kimoto, H Matsunami Fast epitaxial growth of 4H-SiC by chimney-type hot-wall CVD Fast epitaxial growth of 4H-SiC by chimney-type hot-wall CVD Fast epitaxial growth of 4H-SiC by chimney-type hot-wall CVD SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 1, 175-178 SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 1, 175-178 SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 1, 175-178 2002 英語 研究論文(学術雑誌) 公開
K. Nakayama, Y. Miyanagi, H. Shiomi, S. Nishino, T. Kimoto, H. Matsunami K. Nakayama, Y. Miyanagi, H. Shiomi, S. Nishino, T. Kimoto, H. Matsunami K. Nakayama, Y. Miyanagi, H. Shiomi, S. Nishino, T. Kimoto, H. Matsunami The development of 4H-SiC {033̄8} wafers The development of 4H-SiC {033̄8} wafers The development of 4H-SiC {033̄8} wafers Materials Science Forum, 389-393, 1, 123-126 Materials Science Forum, 389-393, 1, 123-126 Materials Science Forum, 389-393, 1, 123-126 2002 英語 公開
Y Negoro, N Miyamoto, T Kimoto, H Matsunami Y Negoro, N Miyamoto, T Kimoto, H Matsunami Y Negoro, N Miyamoto, T Kimoto, H Matsunami Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H-SiC (11(2)over-bar0) Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H-SiC (11(2)over-bar0) Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H-SiC (11(2)over-bar0) APPLIED PHYSICS LETTERS, 80, 2, 240-242 APPLIED PHYSICS LETTERS, 80, 2, 240-242 APPLIED PHYSICS LETTERS, 80, 2, 240-242 2002/01 英語 研究論文(学術雑誌) 公開
K Fujihira, S Tamura, T Kimoto, H Matsunami K Fujihira, S Tamura, T Kimoto, H Matsunami K Fujihira, S Tamura, T Kimoto, H Matsunami Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode IEEE TRANSACTIONS ON ELECTRON DEVICES, 49, 1, 150-154 IEEE TRANSACTIONS ON ELECTRON DEVICES, 49, 1, 150-154 IEEE TRANSACTIONS ON ELECTRON DEVICES, 49, 1, 150-154 2002/01 英語 研究論文(学術雑誌) 公開
K Fujihira, T Kimoto, H Matsunami K Fujihira, T Kimoto, H Matsunami K Fujihira, T Kimoto, H Matsunami Fast epitaxial growth of high-quality 4H-SiC by vertical hot-wall CVD Fast epitaxial growth of high-quality 4H-SiC by vertical hot-wall CVD Fast epitaxial growth of high-quality 4H-SiC by vertical hot-wall CVD SILICON CARBIDE AND RELATED MATERIALS - 2002, 433-4, 161-164 SILICON CARBIDE AND RELATED MATERIALS - 2002, 433-4, 161-164 SILICON CARBIDE AND RELATED MATERIALS - 2002, 433-4, 161-164 2002 英語 研究論文(学術雑誌) 公開
Y Chen, T Kimoto, Y Takeuchi, H Matsunami Y Chen, T Kimoto, Y Takeuchi, H Matsunami Y Chen, T Kimoto, Y Takeuchi, H Matsunami Formation of epitaxial mesa structures on 4H-SiC (0001) and (11(2)over-bar-0) substrates Formation of epitaxial mesa structures on 4H-SiC (0001) and (11(2)over-bar-0) substrates Formation of epitaxial mesa structures on 4H-SiC (0001) and (11(2)over-bar-0) substrates SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 255-258 SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 255-258 SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, 255-258 2002 英語 研究論文(学術雑誌) 公開
T Kimoto, S Nakazawa, K Hashimoto, H Matsunami T Kimoto, S Nakazawa, K Hashimoto, H Matsunami T Kimoto, S Nakazawa, K Hashimoto, H Matsunami Reduction of doping and trap concentrations in 4H-SiC epitaxial layers grown by chemical vapor deposition Reduction of doping and trap concentrations in 4H-SiC epitaxial layers grown by chemical vapor deposition Reduction of doping and trap concentrations in 4H-SiC epitaxial layers grown by chemical vapor deposition APPLIED PHYSICS LETTERS, 79, 17, 2761-2763 APPLIED PHYSICS LETTERS, 79, 17, 2761-2763 APPLIED PHYSICS LETTERS, 79, 17, 2761-2763 2001/10 英語 研究論文(学術雑誌) 公開
T Kimoto, T Yamamoto, ZY Chen, H Yano, H Matsunami T Kimoto, T Yamamoto, ZY Chen, H Yano, H Matsunami T Kimoto, T Yamamoto, ZY Chen, H Yano, H Matsunami Chemical vapor deposition and deep level analyses of 4H-SiC(11(2)over-bar0) Chemical vapor deposition and deep level analyses of 4H-SiC(11(2)over-bar0) Chemical vapor deposition and deep level analyses of 4H-SiC(11(2)over-bar0) JOURNAL OF APPLIED PHYSICS, 89, 11, 6105-6109 JOURNAL OF APPLIED PHYSICS, 89, 11, 6105-6109 JOURNAL OF APPLIED PHYSICS, 89, 11, 6105-6109 2001/06 英語 研究論文(学術雑誌) 公開
T Kimoto, ZY Chen, S Tamura, S Nakamura, N Onojima, H Matsunami T Kimoto, ZY Chen, S Tamura, S Nakamura, N Onojima, H Matsunami T Kimoto, ZY Chen, S Tamura, S Nakamura, N Onojima, H Matsunami Surface morphological structures of 4H-, 6H- and 15R-SiC (0001) epitaxial layers grown by chemical vapor deposition Surface morphological structures of 4H-, 6H- and 15R-SiC (0001) epitaxial layers grown by chemical vapor deposition Surface morphological structures of 4H-, 6H- and 15R-SiC (0001) epitaxial layers grown by chemical vapor deposition JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 40, 5A, 3315-3319 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 40, 5A, 3315-3319 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 40, 5A, 3315-3319 2001/05 英語 研究論文(学術雑誌) 公開
S Tamura, K Fujihira, T Kimoto, H Matsunami S Tamura, K Fujihira, T Kimoto, H Matsunami S Tamura, K Fujihira, T Kimoto, H Matsunami High-purity and thick 4H-and 6H-SiC(0001) epitaxial growth by cold-wall chemical vapor deposition and high-voltage pin diodes High-purity and thick 4H-and 6H-SiC(0001) epitaxial growth by cold-wall chemical vapor deposition and high-voltage pin diodes High-purity and thick 4H-and 6H-SiC(0001) epitaxial growth by cold-wall chemical vapor deposition and high-voltage pin diodes JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40, 4A, L319-L322 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40, 4A, L319-L322 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40, 4A, L319-L322 2001/04 英語 研究論文(学術雑誌) 公開
T Kimoto, S Tamura, Y Chen, K Fujihira, H Matsunami T Kimoto, S Tamura, Y Chen, K Fujihira, H Matsunami T Kimoto, S Tamura, Y Chen, K Fujihira, H Matsunami Fast epitaxial growth of 4H-SiC by chimney-type vertical hot-wall chemical vapor deposition Fast epitaxial growth of 4H-SiC by chimney-type vertical hot-wall chemical vapor deposition Fast epitaxial growth of 4H-SiC by chimney-type vertical hot-wall chemical vapor deposition JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40, 4B, L374-L376 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40, 4B, L374-L376 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40, 4B, L374-L376 2001/04 英語 研究論文(学術雑誌) 公開
T Kimoto, H Yano, S Tamura, N Miyamoto, K Fujihira, Y Negoro, H Matsunami T Kimoto, H Yano, S Tamura, N Miyamoto, K Fujihira, Y Negoro, H Matsunami T Kimoto, H Yano, S Tamura, N Miyamoto, K Fujihira, Y Negoro, H Matsunami Recent progress in SiC epitaxial growth and device processing technology Recent progress in SiC epitaxial growth and device processing technology Recent progress in SiC epitaxial growth and device processing technology SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 353-356, 543-548 SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 353-356, 543-548 SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 353-356, 543-548 2001 英語 研究論文(学術雑誌) 公開
O Klettke, G Pensl, T Kimoto, H Matsunami O Klettke, G Pensl, T Kimoto, H Matsunami O Klettke, G Pensl, T Kimoto, H Matsunami Oxygen-related defect centers observed in 4H/6H-SiC epitaxial layers grown under CO(2) ambient Oxygen-related defect centers observed in 4H/6H-SiC epitaxial layers grown under CO(2) ambient Oxygen-related defect centers observed in 4H/6H-SiC epitaxial layers grown under CO(2) ambient SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 353-356, 459-462 SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 353-356, 459-462 SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 353-356, 459-462 2001 英語 研究論文(学術雑誌) 公開
A Schoner, N Miyamoto, T Kimoto, H Matsunami A Schoner, N Miyamoto, T Kimoto, H Matsunami A Schoner, N Miyamoto, T Kimoto, H Matsunami Deep Level investigation of pn-junctions formed by MeV aluminum and boron implantation into 4H-SiC Deep Level investigation of pn-junctions formed by MeV aluminum and boron implantation into 4H-SiC Deep Level investigation of pn-junctions formed by MeV aluminum and boron implantation into 4H-SiC SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 353-356, 451-454 SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 353-356, 451-454 SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 353-356, 451-454 2001 英語 研究論文(学術雑誌) 公開
H Yano, T Hirao, T Kimoto, H Matsunami H Yano, T Hirao, T Kimoto, H Matsunami H Yano, T Hirao, T Kimoto, H Matsunami A cause for highly improved channel mobility of 4H-SiC metal-oxide-semiconductor field-effect transistors on the (11(2)over-bar0) face A cause for highly improved channel mobility of 4H-SiC metal-oxide-semiconductor field-effect transistors on the (11(2)over-bar0) face A cause for highly improved channel mobility of 4H-SiC metal-oxide-semiconductor field-effect transistors on the (11(2)over-bar0) face APPLIED PHYSICS LETTERS, 78, 3, 374-376 APPLIED PHYSICS LETTERS, 78, 3, 374-376 APPLIED PHYSICS LETTERS, 78, 3, 374-376 2001/01 英語 研究論文(学術雑誌) 公開
N Yano, T Kimoto, H Matsunami N Yano, T Kimoto, H Matsunami N Yano, T Kimoto, H Matsunami Interface states of SiO(2)/SiC on (11(2)over-bar-0) and (0001) Si faces Interface states of SiO(2)/SiC on (11(2)over-bar-0) and (0001) Si faces Interface states of SiO(2)/SiC on (11(2)over-bar-0) and (0001) Si faces SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 353-356, 627-630 SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 353-356, 627-630 SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 353-356, 627-630 2001 英語 研究論文(学術雑誌) 公開
H Matsunami, T Kimoto H Matsunami, T Kimoto H Matsunami, T Kimoto Crystal growth of SiCII. Epitaxial growth Crystal growth of SiCII. Epitaxial growth Crystal growth of SiCII. Epitaxial growth ADVANCES IN CRYSTAL GROWTH RESEARCH, 282-302 ADVANCES IN CRYSTAL GROWTH RESEARCH, 282-302 ADVANCES IN CRYSTAL GROWTH RESEARCH, 282-302 2001 英語 研究論文(国際会議プロシーディングス) 公開
T Hatayama, T Yoneda, T Nakata, M Watanabe, T Kimoto, H Matsunami T Hatayama, T Yoneda, T Nakata, M Watanabe, T Kimoto, H Matsunami T Hatayama, T Yoneda, T Nakata, M Watanabe, T Kimoto, H Matsunami Vanadium ion implanted guard rings for high-voltage 4H-SiC Schottky rectifiers Vanadium ion implanted guard rings for high-voltage 4H-SiC Schottky rectifiers Vanadium ion implanted guard rings for high-voltage 4H-SiC Schottky rectifiers JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 39, 12A, L1216-L1218 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 39, 12A, L1216-L1218 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 39, 12A, L1216-L1218 2000/12 英語 研究論文(学術雑誌) 公開
S Nakamura, T Kimoto, H Matsunami, S Tanaka, N Teraguchi, A Suzuki S Nakamura, T Kimoto, H Matsunami, S Tanaka, N Teraguchi, A Suzuki S Nakamura, T Kimoto, H Matsunami, S Tanaka, N Teraguchi, A Suzuki Formation of periodic steps with a unit-cell height on 6H-SiC (0001) surface by HCl etching Formation of periodic steps with a unit-cell height on 6H-SiC (0001) surface by HCl etching Formation of periodic steps with a unit-cell height on 6H-SiC (0001) surface by HCl etching APPLIED PHYSICS LETTERS, 76, 23, 3412-3414 APPLIED PHYSICS LETTERS, 76, 23, 3412-3414 APPLIED PHYSICS LETTERS, 76, 23, 3412-3414 2000/06 英語 研究論文(学術雑誌) 公開
H Yano, T Hirao, T Kimoto, H Matsunami H Yano, T Hirao, T Kimoto, H Matsunami H Yano, T Hirao, T Kimoto, H Matsunami High channel mobility in inversion layer of SiC MOSFETs for power switching transistors High channel mobility in inversion layer of SiC MOSFETs for power switching transistors High channel mobility in inversion layer of SiC MOSFETs for power switching transistors JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 39, 4B, 2008-2011 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 39, 4B, 2008-2011 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 39, 4B, 2008-2011 2000/04 英語 研究論文(学術雑誌) 公開
S Nakamura, T Hatayama, T Kimoto, T Fuyuki, H Matsunami S Nakamura, T Hatayama, T Kimoto, T Fuyuki, H Matsunami S Nakamura, T Hatayama, T Kimoto, T Fuyuki, H Matsunami Growth of SiC on 6H-SIC {01(1)over-bar-4} substrates by gas source molecular beam epitaxy Growth of SiC on 6H-SIC {01(1)over-bar-4} substrates by gas source molecular beam epitaxy Growth of SiC on 6H-SIC {01(1)over-bar-4} substrates by gas source molecular beam epitaxy SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3, 201-204 SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3, 201-204 SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3, 201-204 2000 英語 研究論文(学術雑誌) 公開
M Yoshimoto, M Goto, J Saraie, T Kimoto, H Matsunami M Yoshimoto, M Goto, J Saraie, T Kimoto, H Matsunami M Yoshimoto, M Goto, J Saraie, T Kimoto, H Matsunami Sub-mu m scale photoluminescence image of SiC and GaN at a low temperature Sub-mu m scale photoluminescence image of SiC and GaN at a low temperature Sub-mu m scale photoluminescence image of SiC and GaN at a low temperature SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3, 627-630 SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3, 627-630 SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3, 627-630 2000 英語 研究論文(学術雑誌) 公開
CM Zetterling, M Ostling, H Yano, T Kimoto, H Matsunami, K Linthicum, RF Davis CM Zetterling, M Ostling, H Yano, T Kimoto, H Matsunami, K Linthicum, RF Davis CM Zetterling, M Ostling, H Yano, T Kimoto, H Matsunami, K Linthicum, RF Davis SiC MISFETs with MBE-grown AlN gate dielectric SiC MISFETs with MBE-grown AlN gate dielectric SiC MISFETs with MBE-grown AlN gate dielectric SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3, 1315-1318 SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3, 1315-1318 SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3, 1315-1318 2000 英語 研究論文(学術雑誌) 公開
T Hatayama, T Fuyuki, S Nakamura, K Kurobe, T Kimoto, H Matsunami T Hatayama, T Fuyuki, S Nakamura, K Kurobe, T Kimoto, H Matsunami T Hatayama, T Fuyuki, S Nakamura, K Kurobe, T Kimoto, H Matsunami In-situ RHEED analysis during alpha-SiC homoepitaxy on (0001)Si- and (000(1)over-bar)C-faces by gas source molecular beam epitaxy In-situ RHEED analysis during alpha-SiC homoepitaxy on (0001)Si- and (000(1)over-bar)C-faces by gas source molecular beam epitaxy In-situ RHEED analysis during alpha-SiC homoepitaxy on (0001)Si- and (000(1)over-bar)C-faces by gas source molecular beam epitaxy SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3, 361-364 SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3, 361-364 SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3, 361-364 2000 英語 研究論文(学術雑誌) 公開
S Tamura, T Kimoto, H Matsunami, M Okada, S Kanazawa, Kimura, I S Tamura, T Kimoto, H Matsunami, M Okada, S Kanazawa, Kimura, I S Tamura, T Kimoto, H Matsunami, M Okada, S Kanazawa, Kimura, I Nuclear transmutation doping of phosphorus into 6H-SiC Nuclear transmutation doping of phosphorus into 6H-SiC Nuclear transmutation doping of phosphorus into 6H-SiC SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3, 849-852 SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3, 849-852 SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3, 849-852 2000 英語 研究論文(学術雑誌) 公開
H Yano, T Hirao, T Kimoto, H Matsunami, K Asano, Y Sugawara H Yano, T Hirao, T Kimoto, H Matsunami, K Asano, Y Sugawara H Yano, T Hirao, T Kimoto, H Matsunami, K Asano, Y Sugawara Anisotropy of inversion channel mobility in 4H-and 6H-SIC MOSFETs on (11(2)over-bar0) face Anisotropy of inversion channel mobility in 4H-and 6H-SIC MOSFETs on (11(2)over-bar0) face Anisotropy of inversion channel mobility in 4H-and 6H-SIC MOSFETs on (11(2)over-bar0) face SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3, 1105-1108 SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3, 1105-1108 SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3, 1105-1108 2000 英語 研究論文(学術雑誌) 公開
T. Kimoto, T. Yamamoto, Z.Y. Chen, H. Yano, H. Matsunami T. Kimoto, T. Yamamoto, Z.Y. Chen, H. Yano, H. Matsunami T. Kimoto, T. Yamamoto, Z.Y. Chen, H. Yano, H. Matsunami 4H-SiC (112̄0) epitaxial growth 4H-SiC (112̄0) epitaxial growth 4H-SiC (112̄0) epitaxial growth Materials Science Forum, 338, I/- Materials Science Forum, 338, I/- Materials Science Forum, 338, I/- 2000 英語 公開
H Yano, T Kimoto, H Matsunami, M Bassler, G Pensl H Yano, T Kimoto, H Matsunami, M Bassler, G Pensl H Yano, T Kimoto, H Matsunami, M Bassler, G Pensl MOSFET performance of 4H-, 6H-, and 15R-SiC processed by dry and wet oxidation MOSFET performance of 4H-, 6H-, and 15R-SiC processed by dry and wet oxidation MOSFET performance of 4H-, 6H-, and 15R-SiC processed by dry and wet oxidation SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3, 1109-1112 SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3, 1109-1112 SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3, 1109-1112 2000 英語 研究論文(学術雑誌) 公開
N Miyamoto, A Saitoh, T Kimoto, H Matsunami, Y Hishida, M Watanabe N Miyamoto, A Saitoh, T Kimoto, H Matsunami, Y Hishida, M Watanabe N Miyamoto, A Saitoh, T Kimoto, H Matsunami, Y Hishida, M Watanabe Formation of deep pn junctions by MeV Al- and B-ion implantations into 4H-SiC and reverse characteristics Formation of deep pn junctions by MeV Al- and B-ion implantations into 4H-SiC and reverse characteristics Formation of deep pn junctions by MeV Al- and B-ion implantations into 4H-SiC and reverse characteristics SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3, 1347-1350 SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3, 1347-1350 SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3, 1347-1350 2000 英語 研究論文(学術雑誌) 公開
ZY Chen, T Kimoto, H Matsunami ZY Chen, T Kimoto, H Matsunami ZY Chen, T Kimoto, H Matsunami Specular surface morphology of 4H-SiC epilayers grown on (1120) face Specular surface morphology of 4H-SiC epilayers grown on (1120) face Specular surface morphology of 4H-SiC epilayers grown on (1120) face JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 38, 12A, L1375-L1378 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 38, 12A, L1375-L1378 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 38, 12A, L1375-L1378 1999/12 英語 研究論文(学術雑誌) 公開
H Yano, T Hirao, T Kimoto, H Matsunami, K Asano, Y Sugawara H Yano, T Hirao, T Kimoto, H Matsunami, K Asano, Y Sugawara H Yano, T Hirao, T Kimoto, H Matsunami, K Asano, Y Sugawara High channel mobility in inversion layers of 4H-SiC MOSFET's by utilizing (11(2)over-bar0) face High channel mobility in inversion layers of 4H-SiC MOSFET's by utilizing (11(2)over-bar0) face High channel mobility in inversion layers of 4H-SiC MOSFET's by utilizing (11(2)over-bar0) face IEEE ELECTRON DEVICE LETTERS, 20, 12, 611-613 IEEE ELECTRON DEVICE LETTERS, 20, 12, 611-613 IEEE ELECTRON DEVICE LETTERS, 20, 12, 611-613 1999/12 英語 研究論文(学術雑誌) 公開
H Matsuura, T Kimoto, H Matsunami H Matsuura, T Kimoto, H Matsunami H Matsuura, T Kimoto, H Matsunami Nitrogen donor concentrations and its energy levels in 4H-SiC uniquely determined by a new graphical method based on Hall-effect measurement Nitrogen donor concentrations and its energy levels in 4H-SiC uniquely determined by a new graphical method based on Hall-effect measurement Nitrogen donor concentrations and its energy levels in 4H-SiC uniquely determined by a new graphical method based on Hall-effect measurement JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 38, 7A, 4013-4016 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 38, 7A, 4013-4016 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 38, 7A, 4013-4016 1999/07 英語 研究論文(学術雑誌) 公開
T Hatayama, S Nakamura, K Kurobe, T Kimoto, T Fuyuki, H Matsunami T Hatayama, S Nakamura, K Kurobe, T Kimoto, T Fuyuki, H Matsunami T Hatayama, S Nakamura, K Kurobe, T Kimoto, T Fuyuki, H Matsunami High-temperature surface structure transitions and growth of alpha-SiC (0001) in ultrahigh vacuum High-temperature surface structure transitions and growth of alpha-SiC (0001) in ultrahigh vacuum High-temperature surface structure transitions and growth of alpha-SiC (0001) in ultrahigh vacuum MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 61-2, 135-138 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 61-2, 135-138 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 61-2, 135-138 1999/07 英語 研究論文(学術雑誌) 公開
T Kimoto, N Miyamoto, H Matsunami T Kimoto, N Miyamoto, H Matsunami T Kimoto, N Miyamoto, H Matsunami Effects of surface defects on the performance of 4H-and 6H-SiC pn junction diodes Effects of surface defects on the performance of 4H-and 6H-SiC pn junction diodes Effects of surface defects on the performance of 4H-and 6H-SiC pn junction diodes MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 61-2, 349-352 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 61-2, 349-352 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 61-2, 349-352 1999/07 英語 研究論文(学術雑誌) 公開
T Dalibor, H Trageser, G Pensl, T Kimoto, H Matsunami, D Nizhner, O Shigiltchoff, WJ Choyke T Dalibor, H Trageser, G Pensl, T Kimoto, H Matsunami, D Nizhner, O Shigiltchoff, WJ Choyke T Dalibor, H Trageser, G Pensl, T Kimoto, H Matsunami, D Nizhner, O Shigiltchoff, WJ Choyke Oxygen in silicon carbide: shallow donors and deep accepters Oxygen in silicon carbide: shallow donors and deep accepters Oxygen in silicon carbide: shallow donors and deep accepters MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 61-2, 454-459 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 61-2, 454-459 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 61-2, 454-459 1999/07 英語 研究論文(学術雑誌) 公開
T Kimoto, N Miyamoto, H Matsunami T Kimoto, N Miyamoto, H Matsunami T Kimoto, N Miyamoto, H Matsunami Performance limiting surface defects in SiC epitaxial p-n junction diodes Performance limiting surface defects in SiC epitaxial p-n junction diodes Performance limiting surface defects in SiC epitaxial p-n junction diodes IEEE TRANSACTIONS ON ELECTRON DEVICES, 46, 3, 471-477 IEEE TRANSACTIONS ON ELECTRON DEVICES, 46, 3, 471-477 IEEE TRANSACTIONS ON ELECTRON DEVICES, 46, 3, 471-477 1999/03 英語 研究論文(学術雑誌) 公開
H Yano, F Katafuchi, T Kimoto, H Matsunami H Yano, F Katafuchi, T Kimoto, H Matsunami H Yano, F Katafuchi, T Kimoto, H Matsunami Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO2/SiC MOS system and MOSFET's Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO2/SiC MOS system and MOSFET's Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO2/SiC MOS system and MOSFET's IEEE TRANSACTIONS ON ELECTRON DEVICES, 46, 3, 504-510 IEEE TRANSACTIONS ON ELECTRON DEVICES, 46, 3, 504-510 IEEE TRANSACTIONS ON ELECTRON DEVICES, 46, 3, 504-510 1999/03 英語 研究論文(学術雑誌) 公開
H Yano, F Katafuchi, T Kimoto, H Matsunami H Yano, F Katafuchi, T Kimoto, H Matsunami H Yano, F Katafuchi, T Kimoto, H Matsunami Effects of oxidation/anneal atmosphere on SiC MOS interface and MOSFETs Effects of oxidation/anneal atmosphere on SiC MOS interface and MOSFETs Effects of oxidation/anneal atmosphere on SiC MOS interface and MOSFETs COMPOUND SEMICONDUCTORS 1998, 162, 723-728 COMPOUND SEMICONDUCTORS 1998, 162, 723-728 COMPOUND SEMICONDUCTORS 1998, 162, 723-728 1999 英語 研究論文(学術雑誌) 公開
T Kimoto, O Takemura, H Matsunami, T Nakata, M Inoue T Kimoto, O Takemura, H Matsunami, T Nakata, M Inoue T Kimoto, O Takemura, H Matsunami, T Nakata, M Inoue Al+ and B+ implantations into 6H-SiC epilayers and application to pn junction diodes Al+ and B+ implantations into 6H-SiC epilayers and application to pn junction diodes Al+ and B+ implantations into 6H-SiC epilayers and application to pn junction diodes JOURNAL OF ELECTRONIC MATERIALS, 27, 4, 358-364 JOURNAL OF ELECTRONIC MATERIALS, 27, 4, 358-364 JOURNAL OF ELECTRONIC MATERIALS, 27, 4, 358-364 1998/04 英語 研究論文(学術雑誌) 公開
H Matsunami, T Kimoto H Matsunami, T Kimoto H Matsunami, T Kimoto Step-controlled epitaxy of SIC: high-quality homoepitaxial growth Step-controlled epitaxy of SIC: high-quality homoepitaxial growth Step-controlled epitaxy of SIC: high-quality homoepitaxial growth DIAMOND AND RELATED MATERIALS, 7, 2-5, 342-347 DIAMOND AND RELATED MATERIALS, 7, 2-5, 342-347 DIAMOND AND RELATED MATERIALS, 7, 2-5, 342-347 1998/02 英語 研究論文(学術雑誌) 公開
H Yano, N Inoue, T Kimoto, H Matsunami H Yano, N Inoue, T Kimoto, H Matsunami H Yano, N Inoue, T Kimoto, H Matsunami Deep states in SiO2/p-type 4H-SiC interface Deep states in SiO2/p-type 4H-SiC interface Deep states in SiO2/p-type 4H-SiC interface SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 264-2, PART 2, 841-844 SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 264-2, PART 2, 841-844 SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 264-2, PART 2, 841-844 1998 英語 研究論文(学術雑誌) 公開
SG Sridhara, DG Nizhner, RP Devaty, WJ Choyke, T Dalibor, G Pensl, T Kimoto SG Sridhara, DG Nizhner, RP Devaty, WJ Choyke, T Dalibor, G Pensl, T Kimoto SG Sridhara, DG Nizhner, RP Devaty, WJ Choyke, T Dalibor, G Pensl, T Kimoto D-II revisited in an modern guise - 6H- and 4H-SiC D-II revisited in an modern guise - 6H- and 4H-SiC D-II revisited in an modern guise - 6H- and 4H-SiC SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 264-2, PART 1, 493-496 SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 264-2, PART 1, 493-496 SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 264-2, PART 1, 493-496 1998 英語 研究論文(学術雑誌) 公開
RP Devaty, WJ Choyke, SG Sridhara, LL Clemen, DG Nizhner, DJ Larkin, T Troffer, G Pensl, T Kimoto, HS Kong RP Devaty, WJ Choyke, SG Sridhara, LL Clemen, DG Nizhner, DJ Larkin, T Troffer, G Pensl, T Kimoto, HS Kong RP Devaty, WJ Choyke, SG Sridhara, LL Clemen, DG Nizhner, DJ Larkin, T Troffer, G Pensl, T Kimoto, HS Kong Optical properties of silicon carbide: Some recent developments Optical properties of silicon carbide: Some recent developments Optical properties of silicon carbide: Some recent developments SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 264-2, PART 1, 455-460 SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 264-2, PART 1, 455-460 SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 264-2, PART 1, 455-460 1998 英語 研究論文(学術雑誌) 公開
T Yamamoto, T Kimoto, H Matsunami T Yamamoto, T Kimoto, H Matsunami T Yamamoto, T Kimoto, H Matsunami Impurity incorporation mechanism in step-controlled epitaxy growth temperature and substrate off-angle dependence Impurity incorporation mechanism in step-controlled epitaxy growth temperature and substrate off-angle dependence Impurity incorporation mechanism in step-controlled epitaxy growth temperature and substrate off-angle dependence SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 264-2, PART 1, 111-114 SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 264-2, PART 1, 111-114 SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 264-2, PART 1, 111-114 1998 英語 研究論文(学術雑誌) 公開
T Kimoto, Q Wahab, A Ellison, U Forsberg, M Tuominen, R Yakimova, A Henry, E Janzen T Kimoto, Q Wahab, A Ellison, U Forsberg, M Tuominen, R Yakimova, A Henry, E Janzen T Kimoto, Q Wahab, A Ellison, U Forsberg, M Tuominen, R Yakimova, A Henry, E Janzen High-voltage (&gt; 2.5kV) 4H-SiC Schottky rectifiers processed on hot-wall CVD and high-temperature CVD layers High-voltage (&gt; 2.5kV) 4H-SiC Schottky rectifiers processed on hot-wall CVD and high-temperature CVD layers High-voltage (&gt; 2.5kV) 4H-SiC Schottky rectifiers processed on hot-wall CVD and high-temperature CVD layers SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 264-2, PART 2, 921-924 SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 264-2, PART 2, 921-924 SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 264-2, PART 2, 921-924 1998 英語 研究論文(学術雑誌) 公開
T Kimoto, A Itoh, N Inoue, O Takemura, T Yamamoto, T Nakajima, H Matsunami T Kimoto, A Itoh, N Inoue, O Takemura, T Yamamoto, T Nakajima, H Matsunami T Kimoto, A Itoh, N Inoue, O Takemura, T Yamamoto, T Nakajima, H Matsunami Conductivity control of SiC by in-situ doping and ion implantation Conductivity control of SiC by in-situ doping and ion implantation Conductivity control of SiC by in-situ doping and ion implantation SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 264-2, PART 2, 675-680 SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 264-2, PART 2, 675-680 SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 264-2, PART 2, 675-680 1998 英語 研究論文(学術雑誌) 公開
O Takemura, T Kimoto, H Matsunami, T Nakata, M Watanabe, M Inoue O Takemura, T Kimoto, H Matsunami, T Nakata, M Watanabe, M Inoue O Takemura, T Kimoto, H Matsunami, T Nakata, M Watanabe, M Inoue Implantation of Al and B acceptors into alpha-SiC and pn junction diodes Implantation of Al and B acceptors into alpha-SiC and pn junction diodes Implantation of Al and B acceptors into alpha-SiC and pn junction diodes SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 264-2, PART 2, 701-704 SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 264-2, PART 2, 701-704 SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 264-2, PART 2, 701-704 1998 英語 研究論文(学術雑誌) 公開
A Ellison, T Kimoto, IG Ivanov, Q Wahab, A Henry, O Kordina, J Zhang, CG Hemmingsson, CY Gu, MR Leys, E Janzen A Ellison, T Kimoto, IG Ivanov, Q Wahab, A Henry, O Kordina, J Zhang, CG Hemmingsson, CY Gu, MR Leys, E Janzen A Ellison, T Kimoto, IG Ivanov, Q Wahab, A Henry, O Kordina, J Zhang, CG Hemmingsson, CY Gu, MR Leys, E Janzen Growth and characterisation of thick SiC epilayers by high temperature CVD Growth and characterisation of thick SiC epilayers by high temperature CVD Growth and characterisation of thick SiC epilayers by high temperature CVD SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 264-2, PART 1, 103-106 SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 264-2, PART 1, 103-106 SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 264-2, PART 1, 103-106 1998 英語 研究論文(学術雑誌) 公開
Q Wahab, T Kimoto, A Ellison, C Hallin, M Tuominen, R Yakimova, A Henry, JP Bergman, E Janzen Q Wahab, T Kimoto, A Ellison, C Hallin, M Tuominen, R Yakimova, A Henry, JP Bergman, E Janzen Q Wahab, T Kimoto, A Ellison, C Hallin, M Tuominen, R Yakimova, A Henry, JP Bergman, E Janzen A 3 kV Schottky barrier diode in 4H-SiC A 3 kV Schottky barrier diode in 4H-SiC A 3 kV Schottky barrier diode in 4H-SiC APPLIED PHYSICS LETTERS, 72, 4, 445-447 APPLIED PHYSICS LETTERS, 72, 4, 445-447 APPLIED PHYSICS LETTERS, 72, 4, 445-447 1998/01 英語 研究論文(学術雑誌) 公開
N Inoue, T Kimoto, H Yano, H Matsunami N Inoue, T Kimoto, H Yano, H Matsunami N Inoue, T Kimoto, H Yano, H Matsunami Deep interface states in SiO2/p-type alpha-SiC structure Deep interface states in SiO2/p-type alpha-SiC structure Deep interface states in SiO2/p-type alpha-SiC structure JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 36, 11A, L1430-L1432 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 36, 11A, L1430-L1432 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 36, 11A, L1430-L1432 1997/11 英語 研究論文(学術雑誌) 公開
K Nishino, T Kimoto, H Matsunami K Nishino, T Kimoto, H Matsunami K Nishino, T Kimoto, H Matsunami Photoluminescence of 3C-SiC epilayers grown on lattice-matched substrates Photoluminescence of 3C-SiC epilayers grown on lattice-matched substrates Photoluminescence of 3C-SiC epilayers grown on lattice-matched substrates JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 36, 10, 6405-6410 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 36, 10, 6405-6410 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 36, 10, 6405-6410 1997/10 英語 研究論文(学術雑誌) 公開
K Nishino, T Kimoto, H Matsunami K Nishino, T Kimoto, H Matsunami K Nishino, T Kimoto, H Matsunami Reduction of double positioning twinning in 3C-SiC grown on alpha-SiC substrates Reduction of double positioning twinning in 3C-SiC grown on alpha-SiC substrates Reduction of double positioning twinning in 3C-SiC grown on alpha-SiC substrates JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 36, 8, 5202-5207 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 36, 8, 5202-5207 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 36, 8, 5202-5207 1997/08 英語 研究論文(学術雑誌) 公開
H Matsunami, T Kimoto H Matsunami, T Kimoto H Matsunami, T Kimoto Step-controlled epitaxial growth of SiC: high quality homoepitaxy Step-controlled epitaxial growth of SiC: high quality homoepitaxy Step-controlled epitaxial growth of SiC: high quality homoepitaxy MATERIALS SCIENCE & ENGINEERING R-REPORTS, 20, 3, 125-166 MATERIALS SCIENCE & ENGINEERING R-REPORTS, 20, 3, 125-166 MATERIALS SCIENCE & ENGINEERING R-REPORTS, 20, 3, 125-166 1997/08 英語 公開
H Matsunami, T Kimoto H Matsunami, T Kimoto H Matsunami, T Kimoto Surface polarity dependence in step-controlled epitaxy: progress in SiC epitaxy Surface polarity dependence in step-controlled epitaxy: progress in SiC epitaxy Surface polarity dependence in step-controlled epitaxy: progress in SiC epitaxy DIAMOND AND RELATED MATERIALS, 6, 10, 1276-1281 DIAMOND AND RELATED MATERIALS, 6, 10, 1276-1281 DIAMOND AND RELATED MATERIALS, 6, 10, 1276-1281 1997/08 英語 研究論文(学術雑誌) 公開
T Dalibor, G Pensl, T Kimoto, H Matsunami, S Sridhara, RP Devaty, WJ Choyke T Dalibor, G Pensl, T Kimoto, H Matsunami, S Sridhara, RP Devaty, WJ Choyke T Dalibor, G Pensl, T Kimoto, H Matsunami, S Sridhara, RP Devaty, WJ Choyke Radiation-induced defect centers in 4H silicon carbide Radiation-induced defect centers in 4H silicon carbide Radiation-induced defect centers in 4H silicon carbide DIAMOND AND RELATED MATERIALS, 6, 10, 1333-1337 DIAMOND AND RELATED MATERIALS, 6, 10, 1333-1337 DIAMOND AND RELATED MATERIALS, 6, 10, 1333-1337 1997/08 英語 研究論文(学術雑誌) 公開
T Kimoto, N Inoue, H Matsunami T Kimoto, N Inoue, H Matsunami T Kimoto, N Inoue, H Matsunami Nitrogen ion implantation into alpha-SiC epitaxial layers Nitrogen ion implantation into alpha-SiC epitaxial layers Nitrogen ion implantation into alpha-SiC epitaxial layers PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 162, 1, 263-276 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 162, 1, 263-276 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 162, 1, 263-276 1997/07 英語 研究論文(学術雑誌) 公開
T Kimoto, A Itoh, H Matsunami T Kimoto, A Itoh, H Matsunami T Kimoto, A Itoh, H Matsunami Step-controlled epitaxial growth of high-quality SiC layers Step-controlled epitaxial growth of high-quality SiC layers Step-controlled epitaxial growth of high-quality SiC layers PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 202, 1, 247-262 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 202, 1, 247-262 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 202, 1, 247-262 1997/07 英語 研究論文(学術雑誌) 公開
T Dalibor, G Pensl, H Matsunami, T Kimoto, WJ Choyke, A Schoner, N Nordell T Dalibor, G Pensl, H Matsunami, T Kimoto, WJ Choyke, A Schoner, N Nordell T Dalibor, G Pensl, H Matsunami, T Kimoto, WJ Choyke, A Schoner, N Nordell Deep defect centers in silicon carbide monitored with deep level transient spectroscopy Deep defect centers in silicon carbide monitored with deep level transient spectroscopy Deep defect centers in silicon carbide monitored with deep level transient spectroscopy PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 162, 1, 199-225 PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 162, 1, 199-225 PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 162, 1, 199-225 1997/07 英語 研究論文(学術雑誌) 公開
KW Lee, KS Yu, JH Boo, Y Kim, T Hatayama, T Kimoto, H Matsunami KW Lee, KS Yu, JH Boo, Y Kim, T Hatayama, T Kimoto, H Matsunami KW Lee, KS Yu, JH Boo, Y Kim, T Hatayama, T Kimoto, H Matsunami Epitaxial growth of cubic SiC films on Si substrates by high vacuum chemical vapor deposition using 1,3-disilabutane Epitaxial growth of cubic SiC films on Si substrates by high vacuum chemical vapor deposition using 1,3-disilabutane Epitaxial growth of cubic SiC films on Si substrates by high vacuum chemical vapor deposition using 1,3-disilabutane JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144, 4, 1474-1476 JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144, 4, 1474-1476 JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144, 4, 1474-1476 1997/04 英語 研究論文(学術雑誌) 公開
T Kimoto, A Itoh, H Matsunami, T Okano T Kimoto, A Itoh, H Matsunami, T Okano T Kimoto, A Itoh, H Matsunami, T Okano Step bunching mechanism in chemical vapor deposition of 6H- and 4H-SiC{0001} Step bunching mechanism in chemical vapor deposition of 6H- and 4H-SiC{0001} Step bunching mechanism in chemical vapor deposition of 6H- and 4H-SiC{0001} JOURNAL OF APPLIED PHYSICS, 81, 8, 3494-3500 JOURNAL OF APPLIED PHYSICS, 81, 8, 3494-3500 JOURNAL OF APPLIED PHYSICS, 81, 8, 3494-3500 1997/04 英語 研究論文(学術雑誌) 公開
KS Park, T Kimoto, H Matsunami KS Park, T Kimoto, H Matsunami KS Park, T Kimoto, H Matsunami High quantum-efficiency 4H-SiC UV photodiode High quantum-efficiency 4H-SiC UV photodiode High quantum-efficiency 4H-SiC UV photodiode JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 30, 1, 123-130 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 30, 1, 123-130 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 30, 1, 123-130 1997/02 英語 研究論文(学術雑誌) 公開
T Kimoto, T Nakajima, H Matsunami, T Nakata, M Inoue T Kimoto, T Nakajima, H Matsunami, T Nakata, M Inoue T Kimoto, T Nakajima, H Matsunami, T Nakata, M Inoue Formation of semi-insulating 6H-SiC layers by vanadium ion implantations Formation of semi-insulating 6H-SiC layers by vanadium ion implantations Formation of semi-insulating 6H-SiC layers by vanadium ion implantations APPLIED PHYSICS LETTERS, 69, 8, 1113-1115 APPLIED PHYSICS LETTERS, 69, 8, 1113-1115 APPLIED PHYSICS LETTERS, 69, 8, 1113-1115 1996/08 英語 研究論文(学術雑誌) 公開
A Itoh, T Kimoto, H Matsunami A Itoh, T Kimoto, H Matsunami A Itoh, T Kimoto, H Matsunami Exciton-related photoluminescence in 4H-SiC grown by step-controlled epitaxy Exciton-related photoluminescence in 4H-SiC grown by step-controlled epitaxy Exciton-related photoluminescence in 4H-SiC grown by step-controlled epitaxy JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 35, 8, 4373-4378 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 35, 8, 4373-4378 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 35, 8, 4373-4378 1996/08 英語 研究論文(学術雑誌) 公開
S Kobayashi, T Kimoto, H Matsunami S Kobayashi, T Kimoto, H Matsunami S Kobayashi, T Kimoto, H Matsunami Effects of channel mobility on SiC power metal-oxide-semiconductor field effect transistor performance Effects of channel mobility on SiC power metal-oxide-semiconductor field effect transistor performance Effects of channel mobility on SiC power metal-oxide-semiconductor field effect transistor performance JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 35, 6A, 3331-3333 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 35, 6A, 3331-3333 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 35, 6A, 3331-3333 1996/06 英語 研究論文(学術雑誌) 公開
T Kimoto, A Itoh, H Matsunami, T Nakata, M Watanabe T Kimoto, A Itoh, H Matsunami, T Nakata, M Watanabe T Kimoto, A Itoh, H Matsunami, T Nakata, M Watanabe Aluminum and boron ion implantations into 6H-SiC epilayers Aluminum and boron ion implantations into 6H-SiC epilayers Aluminum and boron ion implantations into 6H-SiC epilayers JOURNAL OF ELECTRONIC MATERIALS, 25, 5, 879-884 JOURNAL OF ELECTRONIC MATERIALS, 25, 5, 879-884 JOURNAL OF ELECTRONIC MATERIALS, 25, 5, 879-884 1996/05 英語 研究論文(学術雑誌) 公開
A Itoh, T Kimoto, H Matsunami A Itoh, T Kimoto, H Matsunami A Itoh, T Kimoto, H Matsunami Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination IEEE ELECTRON DEVICE LETTERS, 17, 3, 139-141 IEEE ELECTRON DEVICE LETTERS, 17, 3, 139-141 IEEE ELECTRON DEVICE LETTERS, 17, 3, 139-141 1996/03 英語 研究論文(学術雑誌) 公開
H Akita, T Kimoto, N Inoue, H Matsunami H Akita, T Kimoto, N Inoue, H Matsunami H Akita, T Kimoto, N Inoue, H Matsunami Thermal oxidation of B-doped p-type 6H-SiC and fabrication of MOS diodes Thermal oxidation of B-doped p-type 6H-SiC and fabrication of MOS diodes Thermal oxidation of B-doped p-type 6H-SiC and fabrication of MOS diodes SILICON CARBIDE AND RELATED MATERIALS 1995, 142, 725-728 SILICON CARBIDE AND RELATED MATERIALS 1995, 142, 725-728 SILICON CARBIDE AND RELATED MATERIALS 1995, 142, 725-728 1996 英語 研究論文(学術雑誌) 公開
T Kimoto, A Itoh, H Matsunami T Kimoto, A Itoh, H Matsunami T Kimoto, A Itoh, H Matsunami Step bunching in 6H- and 4H-SiC growth by step-controlled epitaxy Step bunching in 6H- and 4H-SiC growth by step-controlled epitaxy Step bunching in 6H- and 4H-SiC growth by step-controlled epitaxy SILICON CARBIDE AND RELATED MATERIALS 1995, 142, 241-244 SILICON CARBIDE AND RELATED MATERIALS 1995, 142, 241-244 SILICON CARBIDE AND RELATED MATERIALS 1995, 142, 241-244 1996 英語 研究論文(学術雑誌) 公開
K Nishino, T Kimoto, H Matsunami K Nishino, T Kimoto, H Matsunami K Nishino, T Kimoto, H Matsunami Homoepitaxial growth of 3C-SiC on 3C-SiC substrates grown by sublimation method Homoepitaxial growth of 3C-SiC on 3C-SiC substrates grown by sublimation method Homoepitaxial growth of 3C-SiC on 3C-SiC substrates grown by sublimation method SILICON CARBIDE AND RELATED MATERIALS 1995, 142, 89-92 SILICON CARBIDE AND RELATED MATERIALS 1995, 142, 89-92 SILICON CARBIDE AND RELATED MATERIALS 1995, 142, 89-92 1996 英語 研究論文(学術雑誌) 公開
T KIMOTO, A ITOH, H MATSUNAMI, S SRIDHARA, LL CLEMEN, RP DEVATY, WJ CHOYKE, T DALIBOR, C PEPPERMULLER, G PENSL T KIMOTO, A ITOH, H MATSUNAMI, S SRIDHARA, LL CLEMEN, RP DEVATY, WJ CHOYKE, T DALIBOR, C PEPPERMULLER, G PENSL T KIMOTO, A ITOH, H MATSUNAMI, S SRIDHARA, LL CLEMEN, RP DEVATY, WJ CHOYKE, T DALIBOR, C PEPPERMULLER, G PENSL NITROGEN DONORS AND DEEP LEVELS IN HIGH-QUALITY 4H-SIC EPILAYERS GROWN BY CHEMICAL-VAPOR-DEPOSITION NITROGEN DONORS AND DEEP LEVELS IN HIGH-QUALITY 4H-SIC EPILAYERS GROWN BY CHEMICAL-VAPOR-DEPOSITION NITROGEN DONORS AND DEEP LEVELS IN HIGH-QUALITY 4H-SIC EPILAYERS GROWN BY CHEMICAL-VAPOR-DEPOSITION APPLIED PHYSICS LETTERS, 67, 19, 2833-2835 APPLIED PHYSICS LETTERS, 67, 19, 2833-2835 APPLIED PHYSICS LETTERS, 67, 19, 2833-2835 1995/11 英語 研究論文(学術雑誌) 公開
T KIMOTO, A ITOH, H MATSUNAMI T KIMOTO, A ITOH, H MATSUNAMI T KIMOTO, A ITOH, H MATSUNAMI INCORPORATION MECHANISM OF N, AL, AND B IMPURITIES IN CHEMICAL-VAPOR-DEPOSITION OF SIC INCORPORATION MECHANISM OF N, AL, AND B IMPURITIES IN CHEMICAL-VAPOR-DEPOSITION OF SIC INCORPORATION MECHANISM OF N, AL, AND B IMPURITIES IN CHEMICAL-VAPOR-DEPOSITION OF SIC APPLIED PHYSICS LETTERS, 67, 16, 2385-2387 APPLIED PHYSICS LETTERS, 67, 16, 2385-2387 APPLIED PHYSICS LETTERS, 67, 16, 2385-2387 1995/10 英語 研究論文(学術雑誌) 公開
K NISHINO, T KIMOTO, H MATSUNAMI K NISHINO, T KIMOTO, H MATSUNAMI K NISHINO, T KIMOTO, H MATSUNAMI PHOTOLUMINESCENCE OF HOMOEPITAXIAL 3C-SIC ON SUBLIMATION-GROWN 3C-SIC SUBSTRATES PHOTOLUMINESCENCE OF HOMOEPITAXIAL 3C-SIC ON SUBLIMATION-GROWN 3C-SIC SUBSTRATES PHOTOLUMINESCENCE OF HOMOEPITAXIAL 3C-SIC ON SUBLIMATION-GROWN 3C-SIC SUBSTRATES JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 34, 9A, L1110-L1113 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 34, 9A, L1110-L1113 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 34, 9A, L1110-L1113 1995/09 英語 研究論文(学術雑誌) 公開
T KIMOTO, H MATSUNAMI T KIMOTO, H MATSUNAMI T KIMOTO, H MATSUNAMI SURFACE-DIFFUSION LENGTHS OF ADATOMS ON 6H-SIC(0001) FACES IN CHEMICAL-VAPOR-DEPOSITION OF SIC SURFACE-DIFFUSION LENGTHS OF ADATOMS ON 6H-SIC(0001) FACES IN CHEMICAL-VAPOR-DEPOSITION OF SIC SURFACE-DIFFUSION LENGTHS OF ADATOMS ON 6H-SIC(0001) FACES IN CHEMICAL-VAPOR-DEPOSITION OF SIC JOURNAL OF APPLIED PHYSICS, 78, 5, 3132-3137 JOURNAL OF APPLIED PHYSICS, 78, 5, 3132-3137 JOURNAL OF APPLIED PHYSICS, 78, 5, 3132-3137 1995/09 英語 研究論文(学術雑誌) 公開
A ITOH, T KIMOTO, H MATSUNAMI A ITOH, T KIMOTO, H MATSUNAMI A ITOH, T KIMOTO, H MATSUNAMI HIGH-PERFORMANCE OF HIGH-VOLTAGE 4H-SIC SCHOTTKY-BARRIER DIODES HIGH-PERFORMANCE OF HIGH-VOLTAGE 4H-SIC SCHOTTKY-BARRIER DIODES HIGH-PERFORMANCE OF HIGH-VOLTAGE 4H-SIC SCHOTTKY-BARRIER DIODES IEEE ELECTRON DEVICE LETTERS, 16, 6, 280-282 IEEE ELECTRON DEVICE LETTERS, 16, 6, 280-282 IEEE ELECTRON DEVICE LETTERS, 16, 6, 280-282 1995/06 英語 研究論文(学術雑誌) 公開
S YAGUCHI, T KIMOTO, N OHYAMA, H MATSUNAMI S YAGUCHI, T KIMOTO, N OHYAMA, H MATSUNAMI S YAGUCHI, T KIMOTO, N OHYAMA, H MATSUNAMI NITROGEN ION-IMPLANTATION INTO 6H-SIC AND APPLICATION TO HIGH-TEMPERATURE, RADIATION-HARD DIODES NITROGEN ION-IMPLANTATION INTO 6H-SIC AND APPLICATION TO HIGH-TEMPERATURE, RADIATION-HARD DIODES NITROGEN ION-IMPLANTATION INTO 6H-SIC AND APPLICATION TO HIGH-TEMPERATURE, RADIATION-HARD DIODES JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 34, 6A, 3036-3042 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 34, 6A, 3036-3042 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 34, 6A, 3036-3042 1995/06 英語 研究論文(学術雑誌) 公開
T KIMOTO, A ITOH, H MATSUNAMI T KIMOTO, A ITOH, H MATSUNAMI T KIMOTO, A ITOH, H MATSUNAMI STEP BUNCHING IN CHEMICAL-VAPOR-DEPOSITION OF 6H-SIC AND 4H-SIC ON VICINAL SIC(0001) FACES STEP BUNCHING IN CHEMICAL-VAPOR-DEPOSITION OF 6H-SIC AND 4H-SIC ON VICINAL SIC(0001) FACES STEP BUNCHING IN CHEMICAL-VAPOR-DEPOSITION OF 6H-SIC AND 4H-SIC ON VICINAL SIC(0001) FACES APPLIED PHYSICS LETTERS, 66, 26, 3645-3647 APPLIED PHYSICS LETTERS, 66, 26, 3645-3647 APPLIED PHYSICS LETTERS, 66, 26, 3645-3647 1995/06 英語 研究論文(学術雑誌) 公開
T KIMOTO, A ITOH, H MATSUNAMI, T NAKATA, M WATANABE T KIMOTO, A ITOH, H MATSUNAMI, T NAKATA, M WATANABE T KIMOTO, A ITOH, H MATSUNAMI, T NAKATA, M WATANABE THE EFFECTS OF N+ DOSE IN IMPLANTATION INTO 6H-SIC EPILAYERS THE EFFECTS OF N+ DOSE IN IMPLANTATION INTO 6H-SIC EPILAYERS THE EFFECTS OF N+ DOSE IN IMPLANTATION INTO 6H-SIC EPILAYERS JOURNAL OF ELECTRONIC MATERIALS, 24, 4, 235-240 JOURNAL OF ELECTRONIC MATERIALS, 24, 4, 235-240 JOURNAL OF ELECTRONIC MATERIALS, 24, 4, 235-240 1995/04 英語 研究論文(学術雑誌) 公開
H MATSUNAMI, T KIMOTO H MATSUNAMI, T KIMOTO H MATSUNAMI, T KIMOTO PROGRESS IN SEMICONDUCTOR SIC AND ION IMPLANTATION PROGRESS IN SEMICONDUCTOR SIC AND ION IMPLANTATION PROGRESS IN SEMICONDUCTOR SIC AND ION IMPLANTATION REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPLEMENT NO 13, MARCH 1995, 1-6 REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPLEMENT NO 13, MARCH 1995, 1-6 REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPLEMENT NO 13, MARCH 1995, 1-6 1995 英語 研究論文(国際会議プロシーディングス) 公開
T KIMOTO, H MATSUNAMI T KIMOTO, H MATSUNAMI T KIMOTO, H MATSUNAMI NUCLEATION AND STEP MOTION IN CHEMICAL-VAPOR-DEPOSITION OF SIC ON 6H-SIC(0001) FACES NUCLEATION AND STEP MOTION IN CHEMICAL-VAPOR-DEPOSITION OF SIC ON 6H-SIC(0001) FACES NUCLEATION AND STEP MOTION IN CHEMICAL-VAPOR-DEPOSITION OF SIC ON 6H-SIC(0001) FACES JOURNAL OF APPLIED PHYSICS, 76, 11, 7322-7327 JOURNAL OF APPLIED PHYSICS, 76, 11, 7322-7327 JOURNAL OF APPLIED PHYSICS, 76, 11, 7322-7327 1994/12 英語 研究論文(学術雑誌) 公開
A ITOH, H AKITA, T KIMOTO, H MATSUNAMI A ITOH, H AKITA, T KIMOTO, H MATSUNAMI A ITOH, H AKITA, T KIMOTO, H MATSUNAMI HIGH-QUALITY 4H-SIC HOMOEPITAXIAL LAYERS GROWN BY STEP-CONTROLLED EPITAXY HIGH-QUALITY 4H-SIC HOMOEPITAXIAL LAYERS GROWN BY STEP-CONTROLLED EPITAXY HIGH-QUALITY 4H-SIC HOMOEPITAXIAL LAYERS GROWN BY STEP-CONTROLLED EPITAXY APPLIED PHYSICS LETTERS, 65, 11, 1400-1402 APPLIED PHYSICS LETTERS, 65, 11, 1400-1402 APPLIED PHYSICS LETTERS, 65, 11, 1400-1402 1994/09 英語 研究論文(学術雑誌) 公開
S JANG, T KIMOTO, H MATSUNAMI S JANG, T KIMOTO, H MATSUNAMI S JANG, T KIMOTO, H MATSUNAMI DEEP LEVELS IN 6H-SIC WAFERS AND STEP-CONTROLLED EPITAXIAL LAYERS DEEP LEVELS IN 6H-SIC WAFERS AND STEP-CONTROLLED EPITAXIAL LAYERS DEEP LEVELS IN 6H-SIC WAFERS AND STEP-CONTROLLED EPITAXIAL LAYERS APPLIED PHYSICS LETTERS, 65, 5, 581-583 APPLIED PHYSICS LETTERS, 65, 5, 581-583 APPLIED PHYSICS LETTERS, 65, 5, 581-583 1994/08 英語 研究論文(学術雑誌) 公開
FR CHIEN, NUTT, SR, WS YOO, T KIMOTO, H MATSUNAMI FR CHIEN, NUTT, SR, WS YOO, T KIMOTO, H MATSUNAMI FR CHIEN, NUTT, SR, WS YOO, T KIMOTO, H MATSUNAMI TERRACE GROWTH AND POLYTYPE DEVELOPMENT IN EPITAXIAL BETA-SIC FILMS ON ALPHA-SIC (6H AND 15R) SUBSTRATES TERRACE GROWTH AND POLYTYPE DEVELOPMENT IN EPITAXIAL BETA-SIC FILMS ON ALPHA-SIC (6H AND 15R) SUBSTRATES TERRACE GROWTH AND POLYTYPE DEVELOPMENT IN EPITAXIAL BETA-SIC FILMS ON ALPHA-SIC (6H AND 15R) SUBSTRATES JOURNAL OF MATERIALS RESEARCH, 9, 4, 940-954 JOURNAL OF MATERIALS RESEARCH, 9, 4, 940-954 JOURNAL OF MATERIALS RESEARCH, 9, 4, 940-954 1994/04 英語 研究論文(学術雑誌) 公開
FR CHIEN, NUTT, SR, WS YOO, T KIMOTO, H MATSUNAMI FR CHIEN, NUTT, SR, WS YOO, T KIMOTO, H MATSUNAMI FR CHIEN, NUTT, SR, WS YOO, T KIMOTO, H MATSUNAMI INTERFACE STRUCTURES OF EPITAXIAL BETA-SIC ON ALPHA-SIC SUBSTRATES INTERFACE STRUCTURES OF EPITAXIAL BETA-SIC ON ALPHA-SIC SUBSTRATES INTERFACE STRUCTURES OF EPITAXIAL BETA-SIC ON ALPHA-SIC SUBSTRATES JOURNAL OF CRYSTAL GROWTH, 137, 1-2, 175-180 JOURNAL OF CRYSTAL GROWTH, 137, 1-2, 175-180 JOURNAL OF CRYSTAL GROWTH, 137, 1-2, 175-180 1994/03 英語 研究論文(学術雑誌) 公開
T KIMOTO, H MATSUNAMI T KIMOTO, H MATSUNAMI T KIMOTO, H MATSUNAMI SURFACE KINETICS OF ADATOMS IN VAPOR-PHASE EPITAXIAL-GROWTH OF SIC ON 6H-SIC(0001) VICINAL SURFACES SURFACE KINETICS OF ADATOMS IN VAPOR-PHASE EPITAXIAL-GROWTH OF SIC ON 6H-SIC(0001) VICINAL SURFACES SURFACE KINETICS OF ADATOMS IN VAPOR-PHASE EPITAXIAL-GROWTH OF SIC ON 6H-SIC(0001) VICINAL SURFACES JOURNAL OF APPLIED PHYSICS, 75, 2, 850-859 JOURNAL OF APPLIED PHYSICS, 75, 2, 850-859 JOURNAL OF APPLIED PHYSICS, 75, 2, 850-859 1994/01 英語 研究論文(学術雑誌) 公開
T KIMOTO, T URUSHIDANI, S KOBAYASHI, H MATSUNAMI T KIMOTO, T URUSHIDANI, S KOBAYASHI, H MATSUNAMI T KIMOTO, T URUSHIDANI, S KOBAYASHI, H MATSUNAMI HIGH-VOLTAGE (GREATER-THAN 1-KV) SIC SCHOTTKY-BARRIER DIODES WITH LOW ON-RESISTANCES HIGH-VOLTAGE (GREATER-THAN 1-KV) SIC SCHOTTKY-BARRIER DIODES WITH LOW ON-RESISTANCES HIGH-VOLTAGE (GREATER-THAN 1-KV) SIC SCHOTTKY-BARRIER DIODES WITH LOW ON-RESISTANCES IEEE ELECTRON DEVICE LETTERS, 14, 12, 548-550 IEEE ELECTRON DEVICE LETTERS, 14, 12, 548-550 IEEE ELECTRON DEVICE LETTERS, 14, 12, 548-550 1993/12 英語 研究論文(学術雑誌) 公開
H IWASAKI, S INOUE, T YOSHINOBU, M TARUTANI, Y TAKAI, R SHIMIZU, A ITO, T KIMOTO, H MATSUNAMI H IWASAKI, S INOUE, T YOSHINOBU, M TARUTANI, Y TAKAI, R SHIMIZU, A ITO, T KIMOTO, H MATSUNAMI H IWASAKI, S INOUE, T YOSHINOBU, M TARUTANI, Y TAKAI, R SHIMIZU, A ITO, T KIMOTO, H MATSUNAMI 4H-SIC/6H-SIC INTERFACE STRUCTURES STUDIED BY HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY 4H-SIC/6H-SIC INTERFACE STRUCTURES STUDIED BY HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY 4H-SIC/6H-SIC INTERFACE STRUCTURES STUDIED BY HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY APPLIED PHYSICS LETTERS, 63, 19, 2636-2637 APPLIED PHYSICS LETTERS, 63, 19, 2636-2637 APPLIED PHYSICS LETTERS, 63, 19, 2636-2637 1993/11 英語 研究論文(学術雑誌) 公開
T KIMOTO, A YAMASHITA, A ITOH, H MATSUNAMI T KIMOTO, A YAMASHITA, A ITOH, H MATSUNAMI T KIMOTO, A YAMASHITA, A ITOH, H MATSUNAMI STEP-CONTROLLED EPITAXIAL-GROWTH OF 4H-SIC AND DOPING OF GA AS A BLUE LUMINESCENT CENTER STEP-CONTROLLED EPITAXIAL-GROWTH OF 4H-SIC AND DOPING OF GA AS A BLUE LUMINESCENT CENTER STEP-CONTROLLED EPITAXIAL-GROWTH OF 4H-SIC AND DOPING OF GA AS A BLUE LUMINESCENT CENTER JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 32, 3A, 1045-1050 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 32, 3A, 1045-1050 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 32, 3A, 1045-1050 1993/03 英語 研究論文(学術雑誌) 公開
T KIMOTO, H NISHINO, WS YOO, H MATSUNAMI T KIMOTO, H NISHINO, WS YOO, H MATSUNAMI T KIMOTO, H NISHINO, WS YOO, H MATSUNAMI GROWTH-MECHANISM OF 6H-SIC IN STEP-CONTROLLED EPITAXY GROWTH-MECHANISM OF 6H-SIC IN STEP-CONTROLLED EPITAXY GROWTH-MECHANISM OF 6H-SIC IN STEP-CONTROLLED EPITAXY JOURNAL OF APPLIED PHYSICS, 73, 2, 726-732 JOURNAL OF APPLIED PHYSICS, 73, 2, 726-732 JOURNAL OF APPLIED PHYSICS, 73, 2, 726-732 1993/01 英語 研究論文(学術雑誌) 公開
A YAMASHITA, WS YOO, T KIMOTO, H MATSUNAMI A YAMASHITA, WS YOO, T KIMOTO, H MATSUNAMI A YAMASHITA, WS YOO, T KIMOTO, H MATSUNAMI HOMOEPITAXIAL CHEMICAL VAPOR-DEPOSITION OF 6H-SIC AT LOW-TEMPERATURES ON (01(1)OVER-BAR-4) SUBSTRATES HOMOEPITAXIAL CHEMICAL VAPOR-DEPOSITION OF 6H-SIC AT LOW-TEMPERATURES ON (01(1)OVER-BAR-4) SUBSTRATES HOMOEPITAXIAL CHEMICAL VAPOR-DEPOSITION OF 6H-SIC AT LOW-TEMPERATURES ON (01(1)OVER-BAR-4) SUBSTRATES JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 31, 11, 3655-3661 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 31, 11, 3655-3661 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 31, 11, 3655-3661 1992/11 英語 研究論文(学術雑誌) 公開
KIMOTO T, NISHINO H, YAMASHITA A, YOO W S, MATSUNAMI H KIMOTO T, NISHINO H, YAMASHITA A, YOO W S, MATSUNAMI H KIMOTO T, NISHINO H, YAMASHITA A, YOO W S, MATSUNAMI H Low Temperature Homoepitaxial Growth of 6H-SiC by VPE Method. Low Temperature Homoepitaxial Growth of 6H-SiC by VPE Method. Low Temperature Homoepitaxial Growth of 6H-SiC by VPE Method. Amorph Cryst Silicon Carbide 4, 31-39 Amorph Cryst Silicon Carbide 4, 31-39 Amorph Cryst Silicon Carbide 4, 31-39 1992 英語 公開
Katsushi Nishino, Tsunenobu Kimoto, Hiroyuki Matsunami Katsushi Nishino, Tsunenobu Kimoto, Hiroyuki Matsunami Katsushi Nishino, Tsunenobu Kimoto, Hiroyuki Matsunami Epitaxial growth of β-SiC on α-SiC substrates by chemical vapor deposition Epitaxial growth of β-SiC on α-SiC substrates by chemical vapor deposition Epitaxial growth of β-SiC on α-SiC substrates by chemical vapor deposition Memoirs of the Faculty of Engineering, Kyoto University, 54, pt 4, 299-313 Memoirs of the Faculty of Engineering, Kyoto University, 54, pt 4, 299-313 Memoirs of the Faculty of Engineering, Kyoto University, 54, pt 4, 299-313 1992 英語 公開
WS YOO, A YAMASHITA, T KIMOTO, H MATSUNAMI WS YOO, A YAMASHITA, T KIMOTO, H MATSUNAMI WS YOO, A YAMASHITA, T KIMOTO, H MATSUNAMI BULK CRYSTAL-GROWTH OF 6H-SIC ON POLYTYPE-CONTROLLED SUBSTRATES THROUGH VAPOR-PHASE AND CHARACTERIZATION BULK CRYSTAL-GROWTH OF 6H-SIC ON POLYTYPE-CONTROLLED SUBSTRATES THROUGH VAPOR-PHASE AND CHARACTERIZATION BULK CRYSTAL-GROWTH OF 6H-SIC ON POLYTYPE-CONTROLLED SUBSTRATES THROUGH VAPOR-PHASE AND CHARACTERIZATION JOURNAL OF CRYSTAL GROWTH, 115, 1-4, 733-739 JOURNAL OF CRYSTAL GROWTH, 115, 1-4, 733-739 JOURNAL OF CRYSTAL GROWTH, 115, 1-4, 733-739 1991/12 英語 研究論文(学術雑誌) 公開
T KIMOTO, H NISHINO, T UEDA, A YAMASHITA, WS YOO, H MATSUNAMI T KIMOTO, H NISHINO, T UEDA, A YAMASHITA, WS YOO, H MATSUNAMI T KIMOTO, H NISHINO, T UEDA, A YAMASHITA, WS YOO, H MATSUNAMI PHOTOLUMINESCENCE OF TI DOPED 6H-SIC GROWN BY VAPOR-PHASE EPITAXY PHOTOLUMINESCENCE OF TI DOPED 6H-SIC GROWN BY VAPOR-PHASE EPITAXY PHOTOLUMINESCENCE OF TI DOPED 6H-SIC GROWN BY VAPOR-PHASE EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 30, 2B, L289-L291 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 30, 2B, L289-L291 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 30, 2B, L289-L291 1991/02 英語 研究論文(学術雑誌) 公開
T FUYUKI, KY DU, S OKAMOTO, S YASUDA, T KIMOTO, M YOSHIMOTO, H MATSUNAMI T FUYUKI, KY DU, S OKAMOTO, S YASUDA, T KIMOTO, M YOSHIMOTO, H MATSUNAMI T FUYUKI, KY DU, S OKAMOTO, S YASUDA, T KIMOTO, M YOSHIMOTO, H MATSUNAMI DEPOSITION OF HIGH-QUALITY A-SI-H BY DIRECT PHOTODECOMPOSITION OF SI2H6 USING VACUUM ULTRAVIOLET-LIGHT DEPOSITION OF HIGH-QUALITY A-SI-H BY DIRECT PHOTODECOMPOSITION OF SI2H6 USING VACUUM ULTRAVIOLET-LIGHT DEPOSITION OF HIGH-QUALITY A-SI-H BY DIRECT PHOTODECOMPOSITION OF SI2H6 USING VACUUM ULTRAVIOLET-LIGHT JOURNAL OF APPLIED PHYSICS, 64, 5, 2380-2383 JOURNAL OF APPLIED PHYSICS, 64, 5, 2380-2383 JOURNAL OF APPLIED PHYSICS, 64, 5, 2380-2383 1988/09 英語 研究論文(学術雑誌) 公開

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Yusuke Nishi, Hiroki Sasakura, Tsunenobu Kimoto Yusuke Nishi, Hiroki Sasakura, Tsunenobu Kimoto Yusuke Nishi, Hiroki Sasakura, Tsunenobu Kimoto Appearance of quantum point contact in Pt/NiO/Pt resistive switching cells Appearance of quantum point contact in Pt/NiO/Pt resistive switching cells Appearance of quantum point contact in Pt/NiO/Pt resistive switching cells JOURNAL OF MATERIALS RESEARCH, 32, 14, 2631-2637 JOURNAL OF MATERIALS RESEARCH, 32, 14, 2631-2637 JOURNAL OF MATERIALS RESEARCH, 32, 14, 2631-2637 2017/07 英語 書評論文、書評、文献紹介等 公開
Tanaka H, Suda J, Kimoto T Tanaka H, Suda J, Kimoto T Tanaka H, Suda J, Kimoto T Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 2017-September, 277-280 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 2017-September, 277-280 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 2017-September, 277-280 2017 公開
Tanaka H, Suda J, Kimoto T Tanaka H, Suda J, Kimoto T Tanaka H, Suda J, Kimoto T Insight into phonon scattering in Si nanowires through high-field hole transport: Impacts of boundary condition and comparison with bulk phonon approximation Insight into phonon scattering in Si nanowires through high-field hole transport: Impacts of boundary condition and comparison with bulk phonon approximation Insight into phonon scattering in Si nanowires through high-field hole transport: Impacts of boundary condition and comparison with bulk phonon approximation Journal of Physics: Conference Series, 864, 1 Journal of Physics: Conference Series, 864, 1 Journal of Physics: Conference Series, 864, 1 2017 公開
鐘ヶ江 一孝, 金子 光顕, 木本 恒暢, 堀田 昌宏, 須田 淳 鐘ヶ江 一孝, 金子 光顕, 木本 恒暢, 堀田 昌宏, 須田 淳 鐘ヶ江 一孝, 金子 光顕, 木本 恒暢, 堀田 昌宏, 須田 淳 ラマン散乱分光法および赤外反射分光法によるGaN自立基板の評価 (レーザ・量子エレクトロニクス) ラマン散乱分光法および赤外反射分光法によるGaN自立基板の評価 (レーザ・量子エレクトロニクス) Characterization of Free-Standing GaN Bulk Substrates by Raman Scattering Spectroscopy and Infrared Reflectance Spectroscopy 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 116, 358, 21-26 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 116, 358, 21-26 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 116, 358, 21-26 2016/12/12 日本語 公開
篠倉 弘樹, 西 佑介, 岩田 達哉, 木本 恒暢 篠倉 弘樹, 西 佑介, 岩田 達哉, 木本 恒暢 SASAKURA Hiroki, NISHI Yusuke, IWATA Tatsuya, KIMOTO Tsunenobu NiOを用いたReRAMのセミフォーミング後における抵抗スイッチング特性 (電子ディスプレイ) NiOを用いたReRAMのセミフォーミング後における抵抗スイッチング特性 (電子ディスプレイ) Resistive switching characteristics of NiO-based ReRAM after semi-forming process 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 114, 359, 129-134 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 114, 359, 129-134 IEICE technical report. Electronic information displays, 114, 359, 129-134 2014/12/12 日本語 研究発表ペーパー・要旨(全国大会、その他学術会議) 公開
篠倉弘樹, 西佑介, 岩田達哉, 木本恒暢 篠倉弘樹, 西佑介, 岩田達哉, 木本恒暢 篠倉弘樹, 西佑介, 岩田達哉, 木本恒暢 NiO薄膜を用いた抵抗変化型メモリにおける2つのモードを有するフォーミング NiO薄膜を用いた抵抗変化型メモリにおける2つのモードを有するフォーミング NiO薄膜を用いた抵抗変化型メモリにおける2つのモードを有するフォーミング 応用物理学会秋季学術講演会講演予稿集(CD-ROM), 75th, ROMBUNNO.20A-A10-8 応用物理学会秋季学術講演会講演予稿集(CD-ROM), 75th, ROMBUNNO.20A-A10-8 応用物理学会秋季学術講演会講演予稿集(CD-ROM), 75th, ROMBUNNO.20A-A10-8 2014/09/01 日本語 研究発表ペーパー・要旨(全国大会、その他学術会議) 公開
岩田達哉, 西佑介, 木本恒暢 岩田達哉, 西佑介, 木本恒暢 岩田達哉, 西佑介, 木本恒暢 反応性スパッタNiO膜の電気特性に膜の微細構造が及ぼす影響 反応性スパッタNiO膜の電気特性に膜の微細構造が及ぼす影響 反応性スパッタNiO膜の電気特性に膜の微細構造が及ぼす影響 応用物理学会春季学術講演会講演予稿集(CD-ROM), 61st, ROMBUNNO.17P-PG2-6 応用物理学会春季学術講演会講演予稿集(CD-ROM), 61st, ROMBUNNO.17P-PG2-6 応用物理学会春季学術講演会講演予稿集(CD-ROM), 61st, ROMBUNNO.17P-PG2-6 2014/03/03 日本語 公開
岩田達哉, 西佑介, 篠倉弘樹, 木本恒暢 岩田達哉, 西佑介, 篠倉弘樹, 木本恒暢 岩田達哉, 西佑介, 篠倉弘樹, 木本恒暢 NiO抵抗変化素子の伝導特性と抵抗状態の差異の新たな解釈 NiO抵抗変化素子の伝導特性と抵抗状態の差異の新たな解釈 NiO抵抗変化素子の伝導特性と抵抗状態の差異の新たな解釈 応用物理学会春季学術講演会講演予稿集(CD-ROM), 61st, ROMBUNNO.19P-E8-8 応用物理学会春季学術講演会講演予稿集(CD-ROM), 61st, ROMBUNNO.19P-E8-8 応用物理学会春季学術講演会講演予稿集(CD-ROM), 61st, ROMBUNNO.19P-E8-8 2014/03/03 日本語 公開
岩田達哉, 西佑介, 木本恒暢 岩田達哉, 西佑介, 木本恒暢 岩田達哉, 西佑介, 木本恒暢 NiO薄膜の膜質がPt/NiO/Pt抵抗変化素子のフォーミング電圧に及ぼす影響 NiO薄膜の膜質がPt/NiO/Pt抵抗変化素子のフォーミング電圧に及ぼす影響 NiO薄膜の膜質がPt/NiO/Pt抵抗変化素子のフォーミング電圧に及ぼす影響 応用物理学会秋季学術講演会講演予稿集(CD-ROM), 74th, ROMBUNNO.18A-D3-5 応用物理学会秋季学術講演会講演予稿集(CD-ROM), 74th, ROMBUNNO.18A-D3-5 応用物理学会秋季学術講演会講演予稿集(CD-ROM), 74th, ROMBUNNO.18A-D3-5 2013/08/31 日本語 公開
西佑介, 岩田達哉, 木本恒暢 西佑介, 岩田達哉, 木本恒暢 西佑介, 岩田達哉, 木本恒暢 Pt/NiO/Pt積層構造におけるフォーミング特性分布 Pt/NiO/Pt積層構造におけるフォーミング特性分布 Pt/NiO/Pt積層構造におけるフォーミング特性分布 応用物理学会春季学術講演会講演予稿集(CD-ROM), 60th, ROMBUNNO.27P-F2-12 応用物理学会春季学術講演会講演予稿集(CD-ROM), 60th, ROMBUNNO.27P-F2-12 応用物理学会春季学術講演会講演予稿集(CD-ROM), 60th, ROMBUNNO.27P-F2-12 2013/03/11 日本語 公開
Tsunenobu Kimoto, Hironori Yoshioka, Takashi Nakamura Tsunenobu Kimoto, Hironori Yoshioka, Takashi Nakamura Tsunenobu Kimoto, Hironori Yoshioka, Takashi Nakamura Physics of SiC MOS interface and development of trench MOSFETs Physics of SiC MOS interface and development of trench MOSFETs Physics of SiC MOS interface and development of trench MOSFETs 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings, 135-138 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings, 135-138 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings, 135-138 2013 英語 公開
Alberto Castellazzi, Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara Alberto Castellazzi, Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara Alberto Castellazzi, Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara Short-Circuit Tests on SiC Power MOSFETs Short-Circuit Tests on SiC Power MOSFETs Short-Circuit Tests on SiC Power MOSFETs 2013 IEEE 10TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND DRIVE SYSTEMS (IEEE PEDS 2013), 1297-1300 2013 IEEE 10TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND DRIVE SYSTEMS (IEEE PEDS 2013), 1297-1300 2013 IEEE 10TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND DRIVE SYSTEMS (IEEE PEDS 2013), 1297-1300 2013 英語 公開
沖元 直樹, 岩田 達哉, 西 佑介, 木本 恒暢 沖元 直樹, 岩田 達哉, 西 佑介, 木本 恒暢 OKIMOTO Naoki, IWATA Tatsuya, NISHI Yusuke, KIMOTO Tsunenobu 金属/TiO₂/金属積層構造の抵抗スイッチング特性に対する電極材料の影響 (シリコン材料・デバイス) 金属/TiO₂/金属積層構造の抵抗スイッチング特性に対する電極材料の影響 (シリコン材料・デバイス) Effects of electrode materials on resistive switching characteristics of Metal/TiO_2/Metal stack structures 電子情報通信学会技術研究報告 : 信学技報, 112, 337, 129-132 電子情報通信学会技術研究報告 : 信学技報, 112, 337, 129-132 Technical report of IEICE. SDM, 112, 337, 129-132 2012/12/07 日本語 研究発表ペーパー・要旨(全国大会、その他学術会議) 公開
堀江大典, 西佑介, 岩田達哉, 木本恒暢 堀江大典, 西佑介, 岩田達哉, 木本恒暢 堀江大典, 西佑介, 岩田達哉, 木本恒暢 NiO薄膜を用いたReRAMにおけるフォーミング特性の分布 NiO薄膜を用いたReRAMにおけるフォーミング特性の分布 NiO薄膜を用いたReRAMにおけるフォーミング特性の分布 応用物理学会学術講演会講演予稿集(CD-ROM), 73rd, ROMBUNNO.14A-C13-3 応用物理学会学術講演会講演予稿集(CD-ROM), 73rd, ROMBUNNO.14A-C13-3 応用物理学会学術講演会講演予稿集(CD-ROM), 73rd, ROMBUNNO.14A-C13-3 2012/08/27 日本語 公開
須田 淳, 木本 恒暢 須田 淳, 木本 恒暢 CT-2-3 SiCパワーデバイス技術(CT-2.ワイドギャップ半導体パワーデバイスの現状と展望,チュートリアルセッション,ソサイエティ企画) CT-2-3 SiCパワーデバイス技術(CT-2.ワイドギャップ半導体パワーデバイスの現状と展望,チュートリアルセッション,ソサイエティ企画) 電子情報通信学会総合大会講演論文集, 2012, 2, "SS-22"-"SS-24" 電子情報通信学会総合大会講演論文集, 2012, 2, "SS-22"-"SS-24" , 2012, 2, "SS-22"-"SS-24" 2012/03/06 日本語 公開
岩田達哉, 西佑介, 木本恒暢 岩田達哉, 西佑介, 木本恒暢 岩田達哉, 西佑介, 木本恒暢 Pt/NiO/Pt抵抗変化素子に形成されたフィラメントの直接観察とその評価 Pt/NiO/Pt抵抗変化素子に形成されたフィラメントの直接観察とその評価 Pt/NiO/Pt抵抗変化素子に形成されたフィラメントの直接観察とその評価 応用物理学関係連合講演会講演予稿集(CD-ROM), 59th, ROMBUNNO.17P-F6-1 応用物理学関係連合講演会講演予稿集(CD-ROM), 59th, ROMBUNNO.17P-F6-1 応用物理学関係連合講演会講演予稿集(CD-ROM), 59th, ROMBUNNO.17P-F6-1 2012/02/29 日本語 公開
西佑介, 堀江大典, 岩田達哉, 木本恒暢 西佑介, 堀江大典, 岩田達哉, 木本恒暢 西佑介, 堀江大典, 岩田達哉, 木本恒暢 Pt/NiO/Pt積層構造におけるフォーミング特性の時間依存 Pt/NiO/Pt積層構造におけるフォーミング特性の時間依存 Pt/NiO/Pt積層構造におけるフォーミング特性の時間依存 応用物理学関係連合講演会講演予稿集(CD-ROM), 59th, ROMBUNNO.16P-F6-9 応用物理学関係連合講演会講演予稿集(CD-ROM), 59th, ROMBUNNO.16P-F6-9 応用物理学関係連合講演会講演予稿集(CD-ROM), 59th, ROMBUNNO.16P-F6-9 2012/02/29 日本語 公開
Yusuke Nishi, Tatsuya Iwata, Daisuke Horie, Tsunenobu Kimoto Yusuke Nishi, Tatsuya Iwata, Daisuke Horie, Tsunenobu Kimoto Yusuke Nishi, Tatsuya Iwata, Daisuke Horie, Tsunenobu Kimoto Time-dependent forming characteristics in Pt/NiO/Pt stack structures for resistive random access memory Time-dependent forming characteristics in Pt/NiO/Pt stack structures for resistive random access memory Time-dependent forming characteristics in Pt/NiO/Pt stack structures for resistive random access memory Materials Research Society Symposium Proceedings, 1430, 141-146 Materials Research Society Symposium Proceedings, 1430, 141-146 Materials Research Society Symposium Proceedings, 1430, 141-146 2012 英語 公開
Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto Identification of the location of conductive filaments formed in Pt/NiO/Pt resistive switching cells and investigation on their properties Identification of the location of conductive filaments formed in Pt/NiO/Pt resistive switching cells and investigation on their properties Identification of the location of conductive filaments formed in Pt/NiO/Pt resistive switching cells and investigation on their properties Materials Research Society Symposium Proceedings, 1430, 159-164 Materials Research Society Symposium Proceedings, 1430, 159-164 Materials Research Society Symposium Proceedings, 1430, 159-164 2012 英語 公開
Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto Orientation and size effects on ballistic electron transport properties in gate-all-around rectangular germanium nanowire FETs Orientation and size effects on ballistic electron transport properties in gate-all-around rectangular germanium nanowire FETs Orientation and size effects on ballistic electron transport properties in gate-all-around rectangular germanium nanowire FETs 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012 2012 英語 公開
Hiroki Niwa, Gan Feng, Jun Suda, Tsunenobu Kimoto Hiroki Niwa, Gan Feng, Jun Suda, Tsunenobu Kimoto Hiroki Niwa, Gan Feng, Jun Suda, Tsunenobu Kimoto Breakdown Characteristics of 12-20 kV-class 4H-SiC PiN Diodes with Improved Junction Termination Structures Breakdown Characteristics of 12-20 kV-class 4H-SiC PiN Diodes with Improved Junction Termination Structures Breakdown Characteristics of 12-20 kV-class 4H-SiC PiN Diodes with Improved Junction Termination Structures 2012 24TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 381-384 2012 24TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 381-384 2012 24TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 381-384 2012 英語 公開
菊地諒介, 奥村宏典, 木本恒暢, 須田淳 菊地諒介, 奥村宏典, 木本恒暢, 須田淳 分子線エピタキシ法による6H‐SiC(0001)基板上へのAlN/GaN短周期超格子のコヒーレント成長 分子線エピタキシ法による6H‐SiC(0001)基板上へのAlN/GaN短周期超格子のコヒーレント成長 電子情報通信学会技術研究報告, 111, 292(LQE2011 96-122), 1-4 電子情報通信学会技術研究報告, 111, 292(LQE2011 96-122), 1-4 , 111, 292(LQE2011 96-122), 1-4 2011/11/10 日本語 公開
奥田貴史, 三宅裕樹, 木本恒暢, 木本恒暢, 須田淳 奥田貴史, 三宅裕樹, 木本恒暢, 木本恒暢, 須田淳 様々なバンド不連続を有するAl<sub>x</sub>Ga<sub>1-x</sub>N/SiCヘテロ接合バイポーラトランジスタの電流輸送機構 様々なバンド不連続を有するAl<sub>x</sub>Ga<sub>1-x</sub>N/SiCヘテロ接合バイポーラトランジスタの電流輸送機構 電子情報通信学会技術研究報告, 111, 292(LQE2011 96-122), 39-42 電子情報通信学会技術研究報告, 111, 292(LQE2011 96-122), 39-42 , 111, 292(LQE2011 96-122), 39-42 2011/11/10 日本語 公開
平野 大輔, 木本 恒暢, 金光 義彦 平野 大輔, 木本 恒暢, 金光 義彦 25aHA-6 SiCにおける高密度電子正孔液滴の発光ダイナミクス(25aHA 顕微・近接場分光/高密度励起現象,領域5(光物性)) 25aHA-6 SiCにおける高密度電子正孔液滴の発光ダイナミクス(25aHA 顕微・近接場分光/高密度励起現象,領域5(光物性)) 日本物理学会講演概要集, 66, 1 日本物理学会講演概要集, 66, 1 , 66, 1 2011/03/03 日本語 公開
Naoki Watanabe, Tsunenobu Kimoto, Jun Suda Naoki Watanabe, Tsunenobu Kimoto, Jun Suda Naoki Watanabe, Tsunenobu Kimoto, Jun Suda Fabrication of electrostatic-actuated single-crystalline 4H-SiC bridge structures by photoelectrochemical etching Fabrication of electrostatic-actuated single-crystalline 4H-SiC bridge structures by photoelectrochemical etching Fabrication of electrostatic-actuated single-crystalline 4H-SiC bridge structures by photoelectrochemical etching Proceedings of SPIE - The International Society for Optical Engineering, 7926 Proceedings of SPIE - The International Society for Optical Engineering, 7926 Proceedings of SPIE - The International Society for Optical Engineering, 7926 2011 英語 公開
Naoki Watanabe, Tsunenobu Kimoto, Jun Suda Naoki Watanabe, Tsunenobu Kimoto, Jun Suda Naoki Watanabe, Tsunenobu Kimoto, Jun Suda Thermo-optic Coefficients of SiC, GaN, and AlN up to 512 degrees C from Infrared to Ultraviolet Region for Tunable Filter Applications Thermo-optic Coefficients of SiC, GaN, and AlN up to 512 degrees C from Infrared to Ultraviolet Region for Tunable Filter Applications Thermo-optic Coefficients of SiC, GaN, and AlN up to 512 degrees C from Infrared to Ultraviolet Region for Tunable Filter Applications MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY XVI, 7926 MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY XVI, 7926 MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY XVI, 7926 2011 英語 公開
Naoki Watanabe, Tsunenobu Kimoto, Jun Suda Naoki Watanabe, Tsunenobu Kimoto, Jun Suda Naoki Watanabe, Tsunenobu Kimoto, Jun Suda Fabrication of Electrostatic-actuated Single-crystalline 4H-SiC Bridge Structures by Photoelectrochemical Etching Fabrication of Electrostatic-actuated Single-crystalline 4H-SiC Bridge Structures by Photoelectrochemical Etching Fabrication of Electrostatic-actuated Single-crystalline 4H-SiC Bridge Structures by Photoelectrochemical Etching MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY XVI, 7926 MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY XVI, 7926 MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY XVI, 7926 2011 英語 公開
Naoki Watanabe, Tsunenobu Kimoto, Jun Suda Naoki Watanabe, Tsunenobu Kimoto, Jun Suda Naoki Watanabe, Tsunenobu Kimoto, Jun Suda Thermo-optic coefficients of SiC, GaN, and AlN up to 512°C from infrared to ultraviolet region for tunable filter applications Thermo-optic coefficients of SiC, GaN, and AlN up to 512°C from infrared to ultraviolet region for tunable filter applications Thermo-optic coefficients of SiC, GaN, and AlN up to 512°C from infrared to ultraviolet region for tunable filter applications Proceedings of SPIE - The International Society for Optical Engineering, 7926 Proceedings of SPIE - The International Society for Optical Engineering, 7926 Proceedings of SPIE - The International Society for Optical Engineering, 7926 2011 英語 公開
Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Hiroki Miyake, Tsunenobu Kimoto, Jun Suda 4H-SiC Bipolar Junction Transistors with Record Current Gains of 257 on (0001) and 335 on (000-1) 4H-SiC Bipolar Junction Transistors with Record Current Gains of 257 on (0001) and 335 on (000-1) 4H-SiC Bipolar Junction Transistors with Record Current Gains of 257 on (0001) and 335 on (000-1) 2011 IEEE 23RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 292-295 2011 IEEE 23RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 292-295 2011 IEEE 23RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 292-295 2011 英語 公開
西佑介, 岩田達哉, 木本恒暢 西佑介, 岩田達哉, 木本恒暢 NISHI YUSUKE, IWATA TATSUYA, KIMOTO TSUNENOBU ニッケル酸化物の抵抗変化を用いた不揮発性メモリの基礎研究 ニッケル酸化物の抵抗変化を用いた不揮発性メモリの基礎研究 Fundamental Research of Nonvolatile Memory utilizing Resistive Switching Property of Nickel Oxide 電気材料技術雑誌, 19, 1, 5-11 電気材料技術雑誌, 19, 1, 5-11 電気材料技術雑誌, 19, 1, 5-11 2010/12/10 日本語 公開
須田 淳, 三宅 裕樹, 木本 恒暢 須田 淳, 三宅 裕樹, 木本 恒暢 III族窒化物/SiCヘテロ界面を用いたワイドギャップ半導体デバイス III族窒化物/SiCヘテロ界面を用いたワイドギャップ半導体デバイス 表面科学 : hyomen kagaku = Journal of the Surface Science Society of Japan, 31, 12, 651-656 表面科学 : hyomen kagaku = Journal of the Surface Science Society of Japan, 31, 12, 651-656 , 31, 12, 651-656 2010/12/10 日本語 公開
岩田達哉, 西佑介, 木本恒暢, 木本恒暢 岩田達哉, 西佑介, 木本恒暢, 木本恒暢 真空中での熱処理によるPt/NiO/Pt抵抗変化素子の電気的特性変化 真空中での熱処理によるPt/NiO/Pt抵抗変化素子の電気的特性変化 電子情報通信学会技術研究報告, 110, 351(SDM2010 185-203), 45-49 電子情報通信学会技術研究報告, 110, 351(SDM2010 185-203), 45-49 , 110, 351(SDM2010 185-203), 45-49 2010/12/10 日本語 公開
吉岡裕典, 森岡直也, 須田淳, 木本恒暢 吉岡裕典, 森岡直也, 須田淳, 木本恒暢 MOSFETのしきい値電圧および理論計算から求めた〈100〉Siナノワイヤのバンドギャップ MOSFETのしきい値電圧および理論計算から求めた〈100〉Siナノワイヤのバンドギャップ 電子情報通信学会技術研究報告, 110, 351(SDM2010 185-203), 1-6 電子情報通信学会技術研究報告, 110, 351(SDM2010 185-203), 1-6 , 110, 351(SDM2010 185-203), 1-6 2010/12/10 日本語 公開
西佑介, 岩田達哉, 木本恒暢 西佑介, 岩田達哉, 木本恒暢 西佑介, 岩田達哉, 木本恒暢 ReRAM用NiO薄膜における酸素組成と電気的特性との相関 ReRAM用NiO薄膜における酸素組成と電気的特性との相関 ReRAM用NiO薄膜における酸素組成と電気的特性との相関 応用物理学会学術講演会講演予稿集(CD-ROM), 71st, ROMBUNNO.16P-E-3 応用物理学会学術講演会講演予稿集(CD-ROM), 71st, ROMBUNNO.16P-E-3 応用物理学会学術講演会講演予稿集(CD-ROM), 71st, ROMBUNNO.16P-E-3 2010/08/30 日本語 公開
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渡辺直樹, 木本恒暢, 須田淳 渡辺直樹, 木本恒暢, 須田淳 光電気化学エッチングにより作製した静電駆動単結晶SiCブリッジ構造 光電気化学エッチングにより作製した静電駆動単結晶SiCブリッジ構造 電気学会マイクロマシン・センサシステム研究会資料, MSS-10, 1-6.8-16.18-30, 5-8 電気学会マイクロマシン・センサシステム研究会資料, MSS-10, 1-6.8-16.18-30, 5-8 , MSS-10, 1-6.8-16.18-30, 5-8 2010/06/17 日本語 公開
Gan Feng, Jun Suda, Tsunenobu Kimoto Gan Feng, Jun Suda, Tsunenobu Kimoto Gan Feng, Jun Suda, Tsunenobu Kimoto Non-destructive detection and visualization of extended defects in 4H-SiC epilayers Non-destructive detection and visualization of extended defects in 4H-SiC epilayers Non-destructive detection and visualization of extended defects in 4H-SiC epilayers B - SILICON CARBIDE 2010-MATERIALS, PROCESSING AND DEVICES, 1246, 37-42 B - SILICON CARBIDE 2010-MATERIALS, PROCESSING AND DEVICES, 1246, 37-42 B - SILICON CARBIDE 2010-MATERIALS, PROCESSING AND DEVICES, 1246, 37-42 2010 英語 公開
Junzo Ishikawa, Yasuhito Gotoh, Mitsuaki Takeuchi, Shuhei Taguchi, Dan Nicolaescu, Hiroshi Tsuji, Tsunenobu Kimoto, Shigeki Sakai Junzo Ishikawa, Yasuhito Gotoh, Mitsuaki Takeuchi, Shuhei Taguchi, Dan Nicolaescu, Hiroshi Tsuji, Tsunenobu Kimoto, Shigeki Sakai Junzo Ishikawa, Yasuhito Gotoh, Mitsuaki Takeuchi, Shuhei Taguchi, Dan Nicolaescu, Hiroshi Tsuji, Tsunenobu Kimoto, Shigeki Sakai Suppression of Divergence of Low Energy Ion Beams by Space Charge Neutralization with Low Energy Electrons Emitted from Field Emitter Arrays Suppression of Divergence of Low Energy Ion Beams by Space Charge Neutralization with Low Energy Electrons Emitted from Field Emitter Arrays Suppression of Divergence of Low Energy Ion Beams by Space Charge Neutralization with Low Energy Electrons Emitted from Field Emitter Arrays ION IMPLANTATION TECHNOLOGY 2010, 1321, 496-+ ION IMPLANTATION TECHNOLOGY 2010, 1321, 496-+ ION IMPLANTATION TECHNOLOGY 2010, 1321, 496-+ 2010 英語 公開
Naoya Moriokaa, Hironori Yoshioka, Jun Suda, Tsunenobu Kimoto Naoya Moriokaa, Hironori Yoshioka, Jun Suda, Tsunenobu Kimoto Naoya Moriokaa, Hironori Yoshioka, Jun Suda, Tsunenobu Kimoto Tight-binding study of size and geometric effects on hole effective mass of silicon nanowires Tight-binding study of size and geometric effects on hole effective mass of silicon nanowires Tight-binding study of size and geometric effects on hole effective mass of silicon nanowires 2010 Silicon Nanoelectronics Workshop, SNW 2010 2010 Silicon Nanoelectronics Workshop, SNW 2010 2010 Silicon Nanoelectronics Workshop, SNW 2010 2010 英語 公開
Tsunenobu Kimoto Tsunenobu Kimoto Tsunenobu Kimoto SiC Technologies for Future Energy Electronics SiC Technologies for Future Energy Electronics SiC Technologies for Future Energy Electronics 2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 9-14 2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 9-14 2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 9-14 2010 英語 公開
木本 恒暢 木本 恒暢 SiCパワー半導体デバイスの特徴と最近の開発動向 SiCパワー半導体デバイスの特徴と最近の開発動向 エネルギーと動力, 60, 35-42 エネルギーと動力, 60, 35-42 , 60, 35-42 2010 日本語 公開
Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Hiroki Miyake, Tsunenobu Kimoto, Jun Suda Demonstration of SiC heterojunction bipolar transistors with AlN/GaN short-period superlattice widegap emitter Demonstration of SiC heterojunction bipolar transistors with AlN/GaN short-period superlattice widegap emitter Demonstration of SiC heterojunction bipolar transistors with AlN/GaN short-period superlattice widegap emitter Device Research Conference - Conference Digest, DRC, 281-282 Device Research Conference - Conference Digest, DRC, 281-282 Device Research Conference - Conference Digest, DRC, 281-282 2009/12/11 英語 公開
西佑介, 岩田達哉, 木本恒暢, 木本恒暢 西佑介, 岩田達哉, 木本恒暢, 木本恒暢 抵抗変化型不揮発性メモリ用NiO薄膜中の欠陥準位の検出 抵抗変化型不揮発性メモリ用NiO薄膜中の欠陥準位の検出 電子情報通信学会技術研究報告, 109, 321(SDM2009 151-170), 97-100 電子情報通信学会技術研究報告, 109, 321(SDM2009 151-170), 97-100 , 109, 321(SDM2009 151-170), 97-100 2009/11/27 日本語 公開
岩田達哉, 西佑介, 木本恒暢, 木本恒暢 岩田達哉, 西佑介, 木本恒暢, 木本恒暢 抵抗変化型不揮発性メモリ用NiO薄膜における電気的特性の組成依存性 抵抗変化型不揮発性メモリ用NiO薄膜における電気的特性の組成依存性 電子情報通信学会技術研究報告, 109, 321(SDM2009 151-170), 89-92 電子情報通信学会技術研究報告, 109, 321(SDM2009 151-170), 89-92 , 109, 321(SDM2009 151-170), 89-92 2009/11/27 日本語 公開
木本 恒暢 木本 恒暢 次世代パワー半導体SiCの特徴と将来展望 (特集 時代が求める「シリコンカーバイド」--応用編) 次世代パワー半導体SiCの特徴と将来展望 (特集 時代が求める「シリコンカーバイド」--応用編) 工業材料, 57, 10, 18-25 工業材料, 57, 10, 18-25 , 57, 10, 18-25 2009/10 日本語 公開
木本 恒暢 木本 恒暢 高純度・高品質SiCを用いた耐圧10kVのPiNダイオード (特集 時代が求める「シリコンカーバイド」--応用編) 高純度・高品質SiCを用いた耐圧10kVのPiNダイオード (特集 時代が求める「シリコンカーバイド」--応用編) 工業材料, 57, 10, 30-34 工業材料, 57, 10, 30-34 , 57, 10, 30-34 2009/10 日本語 公開
岩田達哉, 西佑介, 木本恒暢 岩田達哉, 西佑介, 木本恒暢 岩田達哉, 西佑介, 木本恒暢 NiOを用いたReRAMの高温における抵抗スイッチング特性 NiOを用いたReRAMの高温における抵抗スイッチング特性 NiOを用いたReRAMの高温における抵抗スイッチング特性 応用物理学会学術講演会講演予稿集, 70th, 2, 552 応用物理学会学術講演会講演予稿集, 70th, 2, 552 応用物理学会学術講演会講演予稿集, 70th, 2, 552 2009/09/08 日本語 公開
石井泰寛, 秋山和博, 阿部創平, 村上尚, 熊谷義直, 奥村宏典, 木本恒暢, 須田淳, 纐纈明伯 石井泰寛, 秋山和博, 阿部創平, 村上尚, 熊谷義直, 奥村宏典, 木本恒暢, 須田淳, 纐纈明伯 石井泰寛, 秋山和博, 阿部創平, 村上尚, 熊谷義直, 奥村宏典, 木本恒暢, 須田淳, 纐纈明伯 その場測定による水素雰囲気下6H‐SiC表面反応メカニズムの検討 その場測定による水素雰囲気下6H‐SiC表面反応メカニズムの検討 その場測定による水素雰囲気下6H‐SiC表面反応メカニズムの検討 応用物理学関係連合講演会講演予稿集, 56th, 1, 407 応用物理学関係連合講演会講演予稿集, 56th, 1, 407 応用物理学関係連合講演会講演予稿集, 56th, 1, 407 2009/03/30 日本語 公開
平野 大輔, 太野垣 健, 木本 恒暢, 金光 義彦 平野 大輔, 太野垣 健, 木本 恒暢, 金光 義彦 27aVA-9 SiCの高密度励起発光ダイナミクス(27aVA 高密度励起現象,領域5(光物性)) 27aVA-9 SiCの高密度励起発光ダイナミクス(27aVA 高密度励起現象,領域5(光物性)) 日本物理学会講演概要集, 64, 1 日本物理学会講演概要集, 64, 1 , 64, 1 2009/03/03 日本語 公開
石井泰寛, 秋山和博, 村上尚, 熊谷義直, 奥村宏典, 須田淳, 木本恒暢, 纐纈明伯 石井泰寛, 秋山和博, 村上尚, 熊谷義直, 奥村宏典, 須田淳, 木本恒暢, 纐纈明伯 石井泰寛, 秋山和博, 村上尚, 熊谷義直, 奥村宏典, 須田淳, 木本恒暢, 纐纈明伯 SiC(0001)Si面‐H<sub>2</sub>系における表面反応速度のその場測定 SiC(0001)Si面‐H<sub>2</sub>系における表面反応速度のその場測定 SiC(0001)Si面‐H<sub>2</sub>系における表面反応速度のその場測定 応用物理学会学術講演会講演予稿集, 69th, 1, 329 応用物理学会学術講演会講演予稿集, 69th, 1, 329 応用物理学会学術講演会講演予稿集, 69th, 1, 329 2008/09/02 日本語 公開
秋山和博, 石井泰寛, 村上尚, 熊谷義直, 奥村宏典, 須田淳, 木本恒暢, 纐纈明伯 秋山和博, 石井泰寛, 村上尚, 熊谷義直, 奥村宏典, 須田淳, 木本恒暢, 纐纈明伯 秋山和博, 石井泰寛, 村上尚, 熊谷義直, 奥村宏典, 須田淳, 木本恒暢, 纐纈明伯 In situグラビメトリック法による6H‐SiC(0001)Si面の表面分解速度の測定 In situグラビメトリック法による6H‐SiC(0001)Si面の表面分解速度の測定 In situグラビメトリック法による6H‐SiC(0001)Si面の表面分解速度の測定 応用物理学会学術講演会講演予稿集, 69th, 1, 355 応用物理学会学術講演会講演予稿集, 69th, 1, 355 応用物理学会学術講演会講演予稿集, 69th, 1, 355 2008/09/02 日本語 公開
秋山和博, 石井泰寛, 村上尚, 熊谷義直, 奥村宏典, 木本恒暢, 須田淳, 纐纈明伯 秋山和博, 石井泰寛, 村上尚, 熊谷義直, 奥村宏典, 木本恒暢, 須田淳, 纐纈明伯 秋山和博, 石井泰寛, 村上尚, 熊谷義直, 奥村宏典, 木本恒暢, 須田淳, 纐纈明伯 水素雰囲気下6H‐SiC{0001}表面反応過程のその場測定 水素雰囲気下6H‐SiC{0001}表面反応過程のその場測定 In situ monitoring of the reaction mechanisms on surfaces of {0001} 6H-SiC in H2 ambient 結晶成長国内会議予稿集, 38th, 13 結晶成長国内会議予稿集, 38th, 13 結晶成長国内会議予稿集, 38th, 13 2008 日本語 公開
H. Yoshioka, Y. Nanen, J. Suda, T. Kimoto H. Yoshioka, Y. Nanen, J. Suda, T. Kimoto H. Yoshioka, Y. Nanen, J. Suda, T. Kimoto Fabrication and electronic characteristics of silicon nanowire mosfets Fabrication and electronic characteristics of silicon nanowire mosfets Fabrication and electronic characteristics of silicon nanowire mosfets Materials Research Society Symposium Proceedings, 1080, 90-95 Materials Research Society Symposium Proceedings, 1080, 90-95 Materials Research Society Symposium Proceedings, 1080, 90-95 2008 英語 公開
Ryota Suzuki, Jun Suda, Tsunenobu Kimoto Ryota Suzuki, Jun Suda, Tsunenobu Kimoto Ryota Suzuki, Jun Suda, Tsunenobu Kimoto Temperature dependence of electrical properties of NiO thin films for Resistive Random Access Memory Temperature dependence of electrical properties of NiO thin films for Resistive Random Access Memory Temperature dependence of electrical properties of NiO thin films for Resistive Random Access Memory MATERIALS SCIENCE AND TECHNOLOGY FOR NONVOLATILE MEMORIES, 1071, 69-74 MATERIALS SCIENCE AND TECHNOLOGY FOR NONVOLATILE MEMORIES, 1071, 69-74 MATERIALS SCIENCE AND TECHNOLOGY FOR NONVOLATILE MEMORIES, 1071, 69-74 2008 英語 公開
Masato Noborio, Jun Suda, Tsunenobu Kimoto Masato Noborio, Jun Suda, Tsunenobu Kimoto Masato Noborio, Jun Suda, Tsunenobu Kimoto 4H-SiC double RESURF MOSFETs with a record performance by increasing RESURF dose 4H-SiC double RESURF MOSFETs with a record performance by increasing RESURF dose 4H-SiC double RESURF MOSFETs with a record performance by increasing RESURF dose ISPSD 08: PROCEEDINGS OF THE 20TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 263-266 ISPSD 08: PROCEEDINGS OF THE 20TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 263-266 ISPSD 08: PROCEEDINGS OF THE 20TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 263-266 2008 英語 公開
Tsutomu Hori, Katsunori Danno, Tsunenobu Kimoto Tsutomu Hori, Katsunori Danno, Tsunenobu Kimoto Tsutomu Hori, Katsunori Danno, Tsunenobu Kimoto Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition (vol 306, pg 297, 2007) Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition (vol 306, pg 297, 2007) Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition (vol 306, pg 297, 2007) JOURNAL OF CRYSTAL GROWTH, 308, 2, 430-430 JOURNAL OF CRYSTAL GROWTH, 308, 2, 430-430 JOURNAL OF CRYSTAL GROWTH, 308, 2, 430-430 2007/10 英語 その他記事 公開
A. Oowada, M. Takeuchi, Y. Sakai, Y. Gotoh, M. Nagao, H. Tsuji, J. Ishikawa, S. Sakai, T. Kimoto A. Oowada, M. Takeuchi, Y. Sakai, Y. Gotoh, M. Nagao, H. Tsuji, J. Ishikawa, S. Sakai, T. Kimoto A. Oowada, M. Takeuchi, Y. Sakai, Y. Gotoh, M. Nagao, H. Tsuji, J. Ishikawa, S. Sakai, T. Kimoto Extension of lifetime of silicon field emitter arrays in oxygen ambient by carbon negative ion implantation Extension of lifetime of silicon field emitter arrays in oxygen ambient by carbon negative ion implantation Extension of lifetime of silicon field emitter arrays in oxygen ambient by carbon negative ion implantation 2007 IEEE 20TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE, 200-+ 2007 IEEE 20TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE, 200-+ 2007 IEEE 20TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE, 200-+ 2007 英語 公開
M. Takeuchi, T. Kojima, A. Oowada, Y. Gotoh, M. Nagao, H. Tsuji, J. IShikawa, S. Sakai, T. Kimoto M. Takeuchi, T. Kojima, A. Oowada, Y. Gotoh, M. Nagao, H. Tsuji, J. IShikawa, S. Sakai, T. Kimoto M. Takeuchi, T. Kojima, A. Oowada, Y. Gotoh, M. Nagao, H. Tsuji, J. IShikawa, S. Sakai, T. Kimoto Electron emission properties of silicon field emitter arrays in gaseous ambient for charge compensation device Electron emission properties of silicon field emitter arrays in gaseous ambient for charge compensation device Electron emission properties of silicon field emitter arrays in gaseous ambient for charge compensation device 2007 IEEE 20TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE, 131-+ 2007 IEEE 20TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE, 131-+ 2007 IEEE 20TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE, 131-+ 2007 英語 公開
Tsuyoshi Funaki, Masashi Matsushita, Masashi Sasagawa, Tsunenobu Kimoto, Takashi Hikihara Tsuyoshi Funaki, Masashi Matsushita, Masashi Sasagawa, Tsunenobu Kimoto, Takashi Hikihara Tsuyoshi Funaki, Masashi Matsushita, Masashi Sasagawa, Tsunenobu Kimoto, Takashi Hikihara A study on SiC devices in synchronous rectification of DC-DC converter A study on SiC devices in synchronous rectification of DC-DC converter A study on SiC devices in synchronous rectification of DC-DC converter APEC 2007: TWENTY-SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1 AND 2, 339-+ APEC 2007: TWENTY-SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1 AND 2, 339-+ APEC 2007: TWENTY-SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1 AND 2, 339-+ 2007 英語 公開
J. Suda, M. Horita, T. Kimoto J. Suda, M. Horita, T. Kimoto J. Suda, M. Horita, T. Kimoto Low-dislocation-density nonpolar AlN grown on 4H-SiC (11-20) substrates Low-dislocation-density nonpolar AlN grown on 4H-SiC (11-20) substrates Low-dislocation-density nonpolar AlN grown on 4H-SiC (11-20) substrates Materials Research Society Symposium Proceedings, 955, 61-62 Materials Research Society Symposium Proceedings, 955, 61-62 Materials Research Society Symposium Proceedings, 955, 61-62 2006 英語 公開
Katsunori Danno, Tsunenobu Kimoto Katsunori Danno, Tsunenobu Kimoto Katsunori Danno, Tsunenobu Kimoto Deep levels in as-grown and electron-irradiated p-type 4H-SiC Deep levels in as-grown and electron-irradiated p-type 4H-SiC Deep levels in as-grown and electron-irradiated p-type 4H-SiC SILICON CARBIDE 2006 - MATERIALS, PROCESSING AND DEVICES, 911, 247-+ SILICON CARBIDE 2006 - MATERIALS, PROCESSING AND DEVICES, 911, 247-+ SILICON CARBIDE 2006 - MATERIALS, PROCESSING AND DEVICES, 911, 247-+ 2006 英語 公開
T Funaki, AS Kashyap, HA Mantooth, JC Balda, FD Barlow, T Kimoto, T Hikihara T Funaki, AS Kashyap, HA Mantooth, JC Balda, FD Barlow, T Kimoto, T Hikihara T Funaki, AS Kashyap, HA Mantooth, JC Balda, FD Barlow, T Kimoto, T Hikihara Characterization of SiC diodes in extremely high temperature ambient Characterization of SiC diodes in extremely high temperature ambient Characterization of SiC diodes in extremely high temperature ambient APEC 2006: TWENTY-FIRST ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1-3, 2006, 441-447 APEC 2006: TWENTY-FIRST ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1-3, 2006, 441-447 APEC 2006: TWENTY-FIRST ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1-3, 2006, 441-447 2006 英語 公開
Rob Armitage, Masahiro Horita, Tsunenobu Kimoto Rob Armitage, Masahiro Horita, Tsunenobu Kimoto Rob Armitage, Masahiro Horita, Tsunenobu Kimoto Growth of nonpolar AIN and AlGaN on 4H-SiC (1-100) by molecular beam epitaxy Growth of nonpolar AIN and AlGaN on 4H-SiC (1-100) by molecular beam epitaxy Growth of nonpolar AIN and AlGaN on 4H-SiC (1-100) by molecular beam epitaxy GaN, AIN, InN and Related Materials, 892, 705-710 GaN, AIN, InN and Related Materials, 892, 705-710 GaN, AIN, InN and Related Materials, 892, 705-710 2006 英語 公開
T. Funaki, A. S. Kashyap, H. A. Mantooth, J. C. Balda, F. D. Barlow, T. Kimoto, T. Hikihara T. Funaki, A. S. Kashyap, H. A. Mantooth, J. C. Balda, F. D. Barlow, T. Kimoto, T. Hikihara T. Funaki, A. S. Kashyap, H. A. Mantooth, J. C. Balda, F. D. Barlow, T. Kimoto, T. Hikihara Characterization of SiCHET for temperature dependent device modeling Characterization of SiCHET for temperature dependent device modeling Characterization of SiCHET for temperature dependent device modeling 2006 IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-7, 1384-+ 2006 IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-7, 1384-+ 2006 IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-7, 1384-+ 2006 英語 公開
Katsuhiko Fukunaga, Jun Suda, Tsunenobu Kimoto Katsuhiko Fukunaga, Jun Suda, Tsunenobu Kimoto Katsuhiko Fukunaga, Jun Suda, Tsunenobu Kimoto Anisotropic etching of single crystalline SiC using molten KOH for SiC bulk micromachining Anisotropic etching of single crystalline SiC using molten KOH for SiC bulk micromachining Anisotropic etching of single crystalline SiC using molten KOH for SiC bulk micromachining MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY XI, 6109 MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY XI, 6109 MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY XI, 6109 2006 英語 公開
J Suda, Y Nakano, T Kimoto J Suda, Y Nakano, T Kimoto J Suda, Y Nakano, T Kimoto Influence of substrate misorientation angle and direction in growth of GaN on off-axis SiC(0001) Influence of substrate misorientation angle and direction in growth of GaN on off-axis SiC(0001) Influence of substrate misorientation angle and direction in growth of GaN on off-axis SiC(0001) GAN, AIN, INN AND THEIR ALLOYS, 831, 471-476 GAN, AIN, INN AND THEIR ALLOYS, 831, 471-476 GAN, AIN, INN AND THEIR ALLOYS, 831, 471-476 2005 英語 公開
T Funaki, JC Balda, J Junghans, AS Kashyap, FD Barlow, HA Mantooth, T Kimoto, T Hikihara T Funaki, JC Balda, J Junghans, AS Kashyap, FD Barlow, HA Mantooth, T Kimoto, T Hikihara T Funaki, JC Balda, J Junghans, AS Kashyap, FD Barlow, HA Mantooth, T Kimoto, T Hikihara Power conversion with SiC devices at extremely high ambient temperatures Power conversion with SiC devices at extremely high ambient temperatures Power conversion with SiC devices at extremely high ambient temperatures 2005 IEEE 36th Power Electronic Specialists Conference (PESC), Vols 1-3, 2005, 2030-2035 2005 IEEE 36th Power Electronic Specialists Conference (PESC), Vols 1-3, 2005, 2030-2035 2005 IEEE 36th Power Electronic Specialists Conference (PESC), Vols 1-3, 2005, 2030-2035 2005 英語 公開
N Onojima, J Kaido, J Suda, T Kimoto N Onojima, J Kaido, J Suda, T Kimoto N Onojima, J Kaido, J Suda, T Kimoto Molecular-beam epitaxy of AIN on off-oriented SiC and demonstration of MISFET using AlN/SiC interface Molecular-beam epitaxy of AIN on off-oriented SiC and demonstration of MISFET using AlN/SiC interface Molecular-beam epitaxy of AIN on off-oriented SiC and demonstration of MISFET using AlN/SiC interface Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2, 7, 2643-2646 Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2, 7, 2643-2646 Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2, 7, 2643-2646 2005 英語 公開
R Armitage, J Suda, T Kimoto R Armitage, J Suda, T Kimoto R Armitage, J Suda, T Kimoto Role of initial nucleation in molecular-beam epitaxy of GaN on lattice-matched ZrB2 substrates Role of initial nucleation in molecular-beam epitaxy of GaN on lattice-matched ZrB2 substrates Role of initial nucleation in molecular-beam epitaxy of GaN on lattice-matched ZrB2 substrates Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2, 7, 2191-2194 Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2, 7, 2191-2194 Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2, 7, 2191-2194 2005 英語 公開
Y Nakano, J Suda, T Kimoto Y Nakano, J Suda, T Kimoto Y Nakano, J Suda, T Kimoto Direct growth of GaN on off-oriented SiC (0001) by molecularbeam epitaxy for GaN/SiC heterojunction bipolar transistor Direct growth of GaN on off-oriented SiC (0001) by molecularbeam epitaxy for GaN/SiC heterojunction bipolar transistor Direct growth of GaN on off-oriented SiC (0001) by molecularbeam epitaxy for GaN/SiC heterojunction bipolar transistor PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7, 2, 7, 2208-2211 PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7, 2, 7, 2208-2211 PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7, 2, 7, 2208-2211 2005 英語 公開
R. Armitage, J. Suda, T. Kimoto R. Armitage, J. Suda, T. Kimoto R. Armitage, J. Suda, T. Kimoto Molecular beam epitaxy of GaN on lattice-matched zirconium diboride substrates using low-temperature GaN and ALN nucleation layers Molecular beam epitaxy of GaN on lattice-matched zirconium diboride substrates using low-temperature GaN and ALN nucleation layers Molecular beam epitaxy of GaN on lattice-matched zirconium diboride substrates using low-temperature GaN and ALN nucleation layers Proceedings - Electrochemical Society, 6, 484-495 Proceedings - Electrochemical Society, 6, 484-495 Proceedings - Electrochemical Society, 6, 484-495 2004 英語 公開
Y Negoro, T Kimoto, H Matsunami Y Negoro, T Kimoto, H Matsunami Y Negoro, T Kimoto, H Matsunami Aluminum-ion implantation into 4H-SiC (11-20) and (0001) Aluminum-ion implantation into 4H-SiC (11-20) and (0001) Aluminum-ion implantation into 4H-SiC (11-20) and (0001) SILICON CARBIDE 2004-MATERIALS, PROCESSING AND DEVICES, 815, 217-222 SILICON CARBIDE 2004-MATERIALS, PROCESSING AND DEVICES, 815, 217-222 SILICON CARBIDE 2004-MATERIALS, PROCESSING AND DEVICES, 815, 217-222 2004 英語 公開
T Kimoto, Y Kanzaki, M Noborio, H Kawano, H Matsunami T Kimoto, Y Kanzaki, M Noborio, H Kawano, H Matsunami T Kimoto, Y Kanzaki, M Noborio, H Kawano, H Matsunami MOS interface properties and MOSFET performance on 4H-SiC{0011} and non-basal faces processed by N2O oxidation MOS interface properties and MOSFET performance on 4H-SiC{0011} and non-basal faces processed by N2O oxidation MOS interface properties and MOSFET performance on 4H-SiC{0011} and non-basal faces processed by N2O oxidation SILICON CARBIDE 2004-MATERIALS, PROCESSING AND DEVICES, 815, 199-204 SILICON CARBIDE 2004-MATERIALS, PROCESSING AND DEVICES, 815, 199-204 SILICON CARBIDE 2004-MATERIALS, PROCESSING AND DEVICES, 815, 199-204 2004 英語 公開
J Suda, H Yamashita, R Armitage, T Kimoto, H Matsunami J Suda, H Yamashita, R Armitage, T Kimoto, H Matsunami J Suda, H Yamashita, R Armitage, T Kimoto, H Matsunami Surface control of ZrB2 (0001) substrate for molecular-beam epitaxy of GaN Surface control of ZrB2 (0001) substrate for molecular-beam epitaxy of GaN Surface control of ZrB2 (0001) substrate for molecular-beam epitaxy of GaN GAN AND RELATED ALLOYS - 2003, 798, 369-374 GAN AND RELATED ALLOYS - 2003, 798, 369-374 GAN AND RELATED ALLOYS - 2003, 798, 369-374 2003 英語 公開
J Suda, N Onojima, T Kimoto, H Matsunami J Suda, N Onojima, T Kimoto, H Matsunami J Suda, N Onojima, T Kimoto, H Matsunami Either step-flow or layer-by-layer growth for AIN on SiC (0001) substrates Either step-flow or layer-by-layer growth for AIN on SiC (0001) substrates Either step-flow or layer-by-layer growth for AIN on SiC (0001) substrates GAN AND RELATED ALLOYS - 2003, 798, 311-316 GAN AND RELATED ALLOYS - 2003, 798, 311-316 GAN AND RELATED ALLOYS - 2003, 798, 311-316 2003 英語 公開
N Onojima, J Suda, T Kimoto, H Matsunami N Onojima, J Suda, T Kimoto, H Matsunami N Onojima, J Suda, T Kimoto, H Matsunami Impact of SiC surface control on initial growth mode and crystalline quality of AlN grown by molecular-beam epitaxy Impact of SiC surface control on initial growth mode and crystalline quality of AlN grown by molecular-beam epitaxy Impact of SiC surface control on initial growth mode and crystalline quality of AlN grown by molecular-beam epitaxy 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 0, 7, 2529-2532 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 0, 7, 2529-2532 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 0, 7, 2529-2532 2003 英語 公開
N Onojima, J Suda, T Kimoto, H Matsunami N Onojima, J Suda, T Kimoto, H Matsunami N Onojima, J Suda, T Kimoto, H Matsunami Growth of high-quality non-polar AlN on 4H-SiC(11-20) substrate by molecular-beam epitaxy Growth of high-quality non-polar AlN on 4H-SiC(11-20) substrate by molecular-beam epitaxy Growth of high-quality non-polar AlN on 4H-SiC(11-20) substrate by molecular-beam epitaxy 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 0, 7, 2502-2505 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 0, 7, 2502-2505 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 0, 7, 2502-2505 2003 英語 公開
H. Yano, T. Hirao, T. Kimoto, H. Matsunami H. Yano, T. Hirao, T. Kimoto, H. Matsunami H. Yano, T. Hirao, T. Kimoto, H. Matsunami SiO<sub>2</sub>/SiC interface properties on various surface orientations SiO<sub>2</sub>/SiC interface properties on various surface orientations SiO<sub>2</sub>/SiC interface properties on various surface orientations Materials Research Society Symposium - Proceedings, 742, 219-226 Materials Research Society Symposium - Proceedings, 742, 219-226 Materials Research Society Symposium - Proceedings, 742, 219-226 2002 英語 公開
T. Kimoto, K. Hashimoto, K. Fujihira, K. Danno, S. Nakamura, Y. Negoro, H. Matsunami T. Kimoto, K. Hashimoto, K. Fujihira, K. Danno, S. Nakamura, Y. Negoro, H. Matsunami T. Kimoto, K. Hashimoto, K. Fujihira, K. Danno, S. Nakamura, Y. Negoro, H. Matsunami Epitaxial growth and characterization of 4H-SiC(11-20) and (03-38) Epitaxial growth and characterization of 4H-SiC(11-20) and (03-38) Epitaxial growth and characterization of 4H-SiC(11-20) and (03-38) Materials Research Society Symposium - Proceedings, 742, 3-13 Materials Research Society Symposium - Proceedings, 742, 3-13 Materials Research Society Symposium - Proceedings, 742, 3-13 2002 英語 公開
S. Bai, Y. Ke, Y. Shishkin, O. Shigiltchoff, R.P. Devaty, W.J. Choyke, D. Strauch, B. Stojetz, B. Dorner, D. Hobgood, J. Serrano, M. Cardona, H. Nagasawa, T. Kimoto, L.M. Porter S. Bai, Y. Ke, Y. Shishkin, O. Shigiltchoff, R.P. Devaty, W.J. Choyke, D. Strauch, B. Stojetz, B. Dorner, D. Hobgood, J. Serrano, M. Cardona, H. Nagasawa, T. Kimoto, L.M. Porter S. Bai, Y. Ke, Y. Shishkin, O. Shigiltchoff, R.P. Devaty, W.J. Choyke, D. Strauch, B. Stojetz, B. Dorner, D. Hobgood, J. Serrano, M. Cardona, H. Nagasawa, T. Kimoto, L.M. Porter Four current examples of characterization of silicon carbide Four current examples of characterization of silicon carbide Four current examples of characterization of silicon carbide Materials Research Society Symposium - Proceedings, 742, 151-162 Materials Research Society Symposium - Proceedings, 742, 151-162 Materials Research Society Symposium - Proceedings, 742, 151-162 2002 英語 公開
H. Matsunami, T. Kimoto, H. Yano H. Matsunami, T. Kimoto, H. Yano H. Matsunami, T. Kimoto, H. Yano Epitaxial growth of SiC on non-typical orientations and MOS interfaces Epitaxial growth of SiC on non-typical orientations and MOS interfaces Epitaxial growth of SiC on non-typical orientations and MOS interfaces Materials Research Society Symposium - Proceedings, 640, H.3.4.1-H.3.4.10 Materials Research Society Symposium - Proceedings, 640, H.3.4.1-H.3.4.10 Materials Research Society Symposium - Proceedings, 640, H.3.4.1-H.3.4.10 2001 英語 公開
G. Pensl, M. Bassler, F. Ciobanu, V. Afanas'ev, H. Yano, T. Kimoto, H. Matsunami G. Pensl, M. Bassler, F. Ciobanu, V. Afanas'ev, H. Yano, T. Kimoto, H. Matsunami G. Pensl, M. Bassler, F. Ciobanu, V. Afanas'ev, H. Yano, T. Kimoto, H. Matsunami Traps at the SiC/SiO<sub>2</sub>-interface Traps at the SiC/SiO<sub>2</sub>-interface Traps at the SiC/SiO<sub>2</sub>-interface Materials Research Society Symposium - Proceedings, 640, H.3.2.1-H.3.2.11 Materials Research Society Symposium - Proceedings, 640, H.3.2.1-H.3.2.11 Materials Research Society Symposium - Proceedings, 640, H.3.2.1-H.3.2.11 2001 英語 公開
Hiroyuki Matsunami, Tsunenobu Kimoto Hiroyuki Matsunami, Tsunenobu Kimoto Hiroyuki Matsunami, Tsunenobu Kimoto Step-controlled epitaxial growth of SiC and its conductivity control Step-controlled epitaxial growth of SiC and its conductivity control Step-controlled epitaxial growth of SiC and its conductivity control IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, 269-274 IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, 269-274 IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, 269-274 1999 英語 公開
A ITOH, T KIMOTO, H MATSUNAMI A ITOH, T KIMOTO, H MATSUNAMI A ITOH, T KIMOTO, H MATSUNAMI Efficient power Schottky rectifiers of 4H-SiC Efficient power Schottky rectifiers of 4H-SiC Efficient power Schottky rectifiers of 4H-SiC ISPSD '95 - PROCEEDINGS OF THE 7TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 101-106 ISPSD '95 - PROCEEDINGS OF THE 7TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 101-106 ISPSD '95 - PROCEEDINGS OF THE 7TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 101-106 1995 英語 公開
H MATSUNAMI, T KIMOTO H MATSUNAMI, T KIMOTO H MATSUNAMI, T KIMOTO NUCLEATION AND STEP DYNAMICS IN SIC EPITAXIAL GROWTH NUCLEATION AND STEP DYNAMICS IN SIC EPITAXIAL GROWTH NUCLEATION AND STEP DYNAMICS IN SIC EPITAXIAL GROWTH DIAMOND, SIC AND NITRIDE WIDE BANDGAP SEMICONDUCTORS, 339, 369-379 DIAMOND, SIC AND NITRIDE WIDE BANDGAP SEMICONDUCTORS, 339, 369-379 DIAMOND, SIC AND NITRIDE WIDE BANDGAP SEMICONDUCTORS, 339, 369-379 1994 英語 公開
WS YOO, CP BEETZ, FR CHIEN, NUTT, SR, T KIMOTO, H MATSUNAMI WS YOO, CP BEETZ, FR CHIEN, NUTT, SR, T KIMOTO, H MATSUNAMI WS YOO, CP BEETZ, FR CHIEN, NUTT, SR, T KIMOTO, H MATSUNAMI A MODEL FOR DOUBLE POSITIONING TWIN FORMATION IN CUBIC SIC ON NONCUBIC SIC SUBSTRATES A MODEL FOR DOUBLE POSITIONING TWIN FORMATION IN CUBIC SIC ON NONCUBIC SIC SUBSTRATES A MODEL FOR DOUBLE POSITIONING TWIN FORMATION IN CUBIC SIC ON NONCUBIC SIC SUBSTRATES EVOLUTION OF SURFACE AND THIN FILM MICROSTRUCTURE, 280, 729-732 EVOLUTION OF SURFACE AND THIN FILM MICROSTRUCTURE, 280, 729-732 EVOLUTION OF SURFACE AND THIN FILM MICROSTRUCTURE, 280, 729-732 1993 英語 公開
Takashi Fuyuki, Kai-Ying Du, Shingo Okamoto, Sadayuki Yasuda, Tsunenobu Kimoto, Masahiro Yoshimoto, Hiroyuki Mtsunami Takashi Fuyuki, Kai-Ying Du, Shingo Okamoto, Sadayuki Yasuda, Tsunenobu Kimoto, Masahiro Yoshimoto, Hiroyuki Mtsunami Takashi Fuyuki, Kai-Ying Du, Shingo Okamoto, Sadayuki Yasuda, Tsunenobu Kimoto, Masahiro Yoshimoto, Hiroyuki Mtsunami HIGH-RATE DEPOSITION OF A SI:H BY DIRECT PHOTO-DECOMPOSITION OF SI//2H//6 USING VACUUM ULTRA VIOLET LIGHT. HIGH-RATE DEPOSITION OF A SI:H BY DIRECT PHOTO-DECOMPOSITION OF SI//2H//6 USING VACUUM ULTRA VIOLET LIGHT. HIGH-RATE DEPOSITION OF A SI:H BY DIRECT PHOTO-DECOMPOSITION OF SI//2H//6 USING VACUUM ULTRA VIOLET LIGHT. Conference Record of the IEEE Photovoltaic Specialists Conference, 569-572 Conference Record of the IEEE Photovoltaic Specialists Conference, 569-572 Conference Record of the IEEE Photovoltaic Specialists Conference, 569-572 1987 英語 公開
Shigehiro Nishino, Tsunenobu Kimoto, Kohtaro Furusawa, Hiroyuki Matsunami Shigehiro Nishino, Tsunenobu Kimoto, Kohtaro Furusawa, Hiroyuki Matsunami Shigehiro Nishino, Tsunenobu Kimoto, Kohtaro Furusawa, Hiroyuki Matsunami SiO//2 DEPOSITION BY PHOTO-INITIATION. SiO//2 DEPOSITION BY PHOTO-INITIATION. SiO//2 DEPOSITION BY PHOTO-INITIATION. Conference on Solid State Devices and Materials, 209-212 Conference on Solid State Devices and Materials, 209-212 Conference on Solid State Devices and Materials, 209-212 1986 英語 公開

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Progress and Future Challenges of SiC Power MOSFETs[招待あり] Progress and Future Challenges of SiC Power MOSFETs [招待あり] Progress and Future Challenges of SiC Power MOSFETs [招待あり] 5th IEEE Electron Devices Technology and Manufacturing Conference 2021 5th IEEE Electron Devices Technology and Manufacturing Conference 2021 5th IEEE Electron Devices Technology and Manufacturing Conference 2021 2021/04 公開
WISE Program: Innovation of Advanced Photonic and Electronic Devices[招待あり] WISE Program: Innovation of Advanced Photonic and Electronic Devices [招待あり] WISE Program: Innovation of Advanced Photonic and Electronic Devices [招待あり] International Workshop on Education and Research for Future Electronics International Workshop on Education and Research for Future Electronics International Workshop on Education and Research for Future Electronics 2021/01/20 公開
Lateral spreads of Al and P atoms implanted into a high-purity semi-insulating SiC substrate Lateral spreads of Al and P atoms implanted into a high-purity semi-insulating SiC substrate Lateral spreads of Al and P atoms implanted into a high-purity semi-insulating SiC substrate 2020 International Conference on Solid State Devices and Materials 2020 International Conference on Solid State Devices and Materials 2020 International Conference on Solid State Devices and Materials 2020/09 公開
High electron mobility along the c-axis in 4H-SiC High electron mobility along the c-axis in 4H-SiC High electron mobility along the c-axis in 4H-SiC 2020 International Conference on Solid State Devices and Materials 2020 International Conference on Solid State Devices and Materials 2020 International Conference on Solid State Devices and Materials 2020/09 公開
Accurate Determination of Barrier Heights in Heavily-Doped SiC Schottky Barrier Diodes Fabricated with Various Metals Accurate Determination of Barrier Heights in Heavily-Doped SiC Schottky Barrier Diodes Fabricated with Various Metals Accurate Determination of Barrier Heights in Heavily-Doped SiC Schottky Barrier Diodes Fabricated with Various Metals 2020 International Conference on Solid State Devices and Materials 2020 International Conference on Solid State Devices and Materials 2020 International Conference on Solid State Devices and Materials 2020/09 公開
Enhanced Performance of 50 nm Ultra-Narrow-Body Silicon Carbide MOSFETs Based on FinFET Effect Enhanced Performance of 50 nm Ultra-Narrow-Body Silicon Carbide MOSFETs Based on FinFET Effect Enhanced Performance of 50 nm Ultra-Narrow-Body Silicon Carbide MOSFETs Based on FinFET Effect IEEE 32nd International. Symposium on Power Semiconder Devices & ICs (ISPSD 2020) IEEE 32nd International. Symposium on Power Semiconder Devices & ICs (ISPSD 2020) IEEE 32nd International. Symposium on Power Semiconder Devices & ICs (ISPSD 2020) 2020/09 公開
Progress and Future Prospects of High-Voltage SiC Power Devices[招待あり] Progress and Future Prospects of High-Voltage SiC Power Devices [招待あり] Progress and Future Prospects of High-Voltage SiC Power Devices [招待あり] 2020 International. Symposium on VLSI Technology, Systems and Applications 2020 International. Symposium on VLSI Technology, Systems and Applications 2020 International. Symposium on VLSI Technology, Systems and Applications 2020/08 公開
Reverse Field Emission Current in Heavily-Doped SiC Schottky Barrier Diodes Reverse Field Emission Current in Heavily-Doped SiC Schottky Barrier Diodes Reverse Field Emission Current in Heavily-Doped SiC Schottky Barrier Diodes International Symposium on Creation of Advanced Photonic and Electronic Devices 2020 International Symposium on Creation of Advanced Photonic and Electronic Devices 2020 International Symposium on Creation of Advanced Photonic and Electronic Devices 2020 2020/03/10 公開
Gradual Resistive Switching Characteristics in Pt/TaOx/Ta2O5/Pt Cells Gradual Resistive Switching Characteristics in Pt/TaOx/Ta2O5/Pt Cells Gradual Resistive Switching Characteristics in Pt/TaOx/Ta2O5/Pt Cells International Symposium on Creation of Advanced Photonic and Electronic Devices 2020 International Symposium on Creation of Advanced Photonic and Electronic Devices 2020 International Symposium on Creation of Advanced Photonic and Electronic Devices 2020 2020/03/10 公開
Interface State Density Distribution Considering the Inversion Layer Quantization in SiC MOSFETs Interface State Density Distribution Considering the Inversion Layer Quantization in SiC MOSFETs Interface State Density Distribution Considering the Inversion Layer Quantization in SiC MOSFETs International Symposium on Creation of Advanced Photonic and Electronic Devices 2020 International Symposium on Creation of Advanced Photonic and Electronic Devices 2020 International Symposium on Creation of Advanced Photonic and Electronic Devices 2020 2020/03/10 公開
Investigation of Gate Oxide Reliabilities in N2 Annealed SiC/SiO2 Structure Investigation of Gate Oxide Reliabilities in N2 Annealed SiC/SiO2 Structure Investigation of Gate Oxide Reliabilities in N2 Annealed SiC/SiO2 Structure International Symposium on Creation of Advanced Photonic and Electronic Devices 2020 International Symposium on Creation of Advanced Photonic and Electronic Devices 2020 International Symposium on Creation of Advanced Photonic and Electronic Devices 2020 2020/03/10 公開
Photoionization Cross Section of the Carbon-related Hole Trap in n-type GaN, Photoionization Cross Section of the Carbon-related Hole Trap in n-type GaN, Photoionization Cross Section of the Carbon-related Hole Trap in n-type GaN, International Symposium on Creation of Advanced Photonic and Electronic Devices 2020 International Symposium on Creation of Advanced Photonic and Electronic Devices 2020 International Symposium on Creation of Advanced Photonic and Electronic Devices 2020 2020/03/10 公開
Study on Avalanche Breakdown in GaN -Determination of Impact Ionization Coefficients and Critical Electric Field- Study on Avalanche Breakdown in GaN -Determination of Impact Ionization Coefficients and Critical Electric Field- Study on Avalanche Breakdown in GaN -Determination of Impact Ionization Coefficients and Critical Electric Field- International Symposium on Creation of Advanced Photonic and Electronic Devices 2020 International Symposium on Creation of Advanced Photonic and Electronic Devices 2020 International Symposium on Creation of Advanced Photonic and Electronic Devices 2020 2020/03/10 公開
Progress and future challenges of SiC power devices for energy efficiency[招待あり] Progress and future challenges of SiC power devices for energy efficiency [招待あり] Progress and future challenges of SiC power devices for energy efficiency [招待あり] 12th International Symposium on Advanced Plasma Science & Its Applications for Nitrides and Nanomaterials 12th International Symposium on Advanced Plasma Science & Its Applications for Nitrides and Nanomaterials 12th International Symposium on Advanced Plasma Science & Its Applications for Nitrides and Nanomaterials 2020/03/09 公開
Bipolar Forward Degradation Phenomena and Countermeasures in SiC Power Device[招待あり] Bipolar Forward Degradation Phenomena and Countermeasures in SiC Power Device [招待あり] Bipolar Forward Degradation Phenomena and Countermeasures in SiC Power Device [招待あり] ECPE Workshop on Power Semiconductor Robustness – What Kills Power Devices? ECPE Workshop on Power Semiconductor Robustness – What Kills Power Devices? ECPE Workshop on Power Semiconductor Robustness – What Kills Power Devices? 2020/01 公開
Breakdown Phenomena in High- and Low-Voltage SiC Devices[招待あり] Breakdown Phenomena in High- and Low-Voltage SiC Devices [招待あり] Breakdown Phenomena in High- and Low-Voltage SiC Devices [招待あり] Materials Research Meeting 2019 Materials Research Meeting 2019 Materials Research Meeting 2019 2019/12 公開
Impact ionization coefficients in GaN measured by above- and sub-Eg illuminations for p-/n+ junction, Impact ionization coefficients in GaN measured by above- and sub-Eg illuminations for p-/n+ junction, Impact ionization coefficients in GaN measured by above- and sub-Eg illuminations for p-/n+ junction, 2019 Int. Electron Devices Meeting 2019 Int. Electron Devices Meeting 2019 Int. Electron Devices Meeting 2019/11 公開
Impact Ionization Coefficients for 4H-SiC on a-face (11-20) and their Temperature Variations Impact Ionization Coefficients for 4H-SiC on a-face (11-20) and their Temperature Variations Impact Ionization Coefficients for 4H-SiC on a-face (11-20) and their Temperature Variations 9th Asia-Pacific Workshop on Widegap Semiconductors 9th Asia-Pacific Workshop on Widegap Semiconductors 9th Asia-Pacific Workshop on Widegap Semiconductors 2019/11 公開
Impact of high-temperature nitrogen annealing on interface properties of p-type 4H-SiC/SiO2 Impact of high-temperature nitrogen annealing on interface properties of p-type 4H-SiC/SiO2 Impact of high-temperature nitrogen annealing on interface properties of p-type 4H-SiC/SiO2 9th Asia-Pacific Workshop on Widegap Semiconductors 9th Asia-Pacific Workshop on Widegap Semiconductors 9th Asia-Pacific Workshop on Widegap Semiconductors 2019/11 公開
Energy distributions of interface state density originating from tail states of the conduction band in SiC MOS structures Energy distributions of interface state density originating from tail states of the conduction band in SiC MOS structures Energy distributions of interface state density originating from tail states of the conduction band in SiC MOS structures 9th Asia-Pacific Workshop on Widegap Semiconductors 9th Asia-Pacific Workshop on Widegap Semiconductors 9th Asia-Pacific Workshop on Widegap Semiconductors 2019/11 公開
Depth Profiles of Defects Generated by RIE in 4H-SiC Characterized by Deep-level Transient Spectroscopy, Depth Profiles of Defects Generated by RIE in 4H-SiC Characterized by Deep-level Transient Spectroscopy, Depth Profiles of Defects Generated by RIE in 4H-SiC Characterized by Deep-level Transient Spectroscopy, 9th Asia-Pacific Workshop on Widegap Semiconductors 9th Asia-Pacific Workshop on Widegap Semiconductors 9th Asia-Pacific Workshop on Widegap Semiconductors 2019/11 公開
Impacts of Channel Length on Electrical Characteristics in Side-Gate SiC JFETs Impacts of Channel Length on Electrical Characteristics in Side-Gate SiC JFETs Impacts of Channel Length on Electrical Characteristics in Side-Gate SiC JFETs 9th Asia-Pacific Workshop on Widegap Semiconductors 9th Asia-Pacific Workshop on Widegap Semiconductors 9th Asia-Pacific Workshop on Widegap Semiconductors 2019/11 公開
Significant Image Force Lowering at Metal/Heavily-Doped SiC Interfaces Significant Image Force Lowering at Metal/Heavily-Doped SiC Interfaces Significant Image Force Lowering at Metal/Heavily-Doped SiC Interfaces 9th Asia-Pacific Workshop on Widegap Semiconductors 9th Asia-Pacific Workshop on Widegap Semiconductors 9th Asia-Pacific Workshop on Widegap Semiconductors 2019/11 公開
Theoretical Study of Band Structure Effects on Impact Ionization Coefficients in Wide-bandgap Semiconductors Theoretical Study of Band Structure Effects on Impact Ionization Coefficients in Wide-bandgap Semiconductors Theoretical Study of Band Structure Effects on Impact Ionization Coefficients in Wide-bandgap Semiconductors 9th Asia-Pacific Workshop on Widegap Semiconductors 9th Asia-Pacific Workshop on Widegap Semiconductors 9th Asia-Pacific Workshop on Widegap Semiconductors 2019/11 公開
Resistivity of High-Purity Semi-Insulating 4H-SiC Substrates Resistivity of High-Purity Semi-Insulating 4H-SiC Substrates Resistivity of High-Purity Semi-Insulating 4H-SiC Substrates 9th Asia-Pacific Workshop on Widegap Semiconductors 9th Asia-Pacific Workshop on Widegap Semiconductors 9th Asia-Pacific Workshop on Widegap Semiconductors 2019/11 公開
Enhancement of Conductivity Modulation in SiC Bipolar Junction Transistors by Decreasing Base Spreading Resistance Enhancement of Conductivity Modulation in SiC Bipolar Junction Transistors by Decreasing Base Spreading Resistance Enhancement of Conductivity Modulation in SiC Bipolar Junction Transistors by Decreasing Base Spreading Resistance International Conference on Silicon Carbide and Related Materials 2019 International Conference on Silicon Carbide and Related Materials 2019 International Conference on Silicon Carbide and Related Materials 2019 2019/10 公開
Next-Generation High- to Ultra-High-Voltage SiC Power Devices[招待あり] Next-Generation High- to Ultra-High-Voltage SiC Power Devices [招待あり] Next-Generation High- to Ultra-High-Voltage SiC Power Devices [招待あり] International Conference on Silicon Carbide and Related Materials 2019 International Conference on Silicon Carbide and Related Materials 2019 International Conference on Silicon Carbide and Related Materials 2019 2019/10 公開
Breakdown Characteristics of Lateral PIN Diodes Fully Fabricated by Ion Implantation into HTCVD-Grown High-Purity Semi-Insulating SiC Substrate Breakdown Characteristics of Lateral PIN Diodes Fully Fabricated by Ion Implantation into HTCVD-Grown High-Purity Semi-Insulating SiC Substrate Breakdown Characteristics of Lateral PIN Diodes Fully Fabricated by Ion Implantation into HTCVD-Grown High-Purity Semi-Insulating SiC Substrate International Conference on Silicon Carbide and Related Materials 2019 International Conference on Silicon Carbide and Related Materials 2019 International Conference on Silicon Carbide and Related Materials 2019 2019/10 公開
Photocurrent induced by Franz-Keldysh effect in 4H-SiC p-n junction diodes under high electric field along <11-20> direction Photocurrent induced by Franz-Keldysh effect in 4H-SiC p-n junction diodes under high electric field along <11-20> direction Photocurrent induced by Franz-Keldysh effect in 4H-SiC p-n junction diodes under high electric field along <11-20> direction International Conference on Silicon Carbide and Related Materials 2019 International Conference on Silicon Carbide and Related Materials 2019 International Conference on Silicon Carbide and Related Materials 2019 2019/10 公開
Depth Profiles of Deep Levels Generated by ICP-RIE in 4H-SiC Depth Profiles of Deep Levels Generated by ICP-RIE in 4H-SiC Depth Profiles of Deep Levels Generated by ICP-RIE in 4H-SiC International Conference on Silicon Carbide and Related Materials 2019 International Conference on Silicon Carbide and Related Materials 2019 International Conference on Silicon Carbide and Related Materials 2019 2019/10 公開
Impacts of High-Temperature Annealing and Thermal Oxidation on Electrical Properties of High-Purity Semi-Insulating 4H-SiC Substrates Grown by HTCVD Impacts of High-Temperature Annealing and Thermal Oxidation on Electrical Properties of High-Purity Semi-Insulating 4H-SiC Substrates Grown by HTCVD Impacts of High-Temperature Annealing and Thermal Oxidation on Electrical Properties of High-Purity Semi-Insulating 4H-SiC Substrates Grown by HTCVD International Conference on Silicon Carbide and Related Materials 2019 International Conference on Silicon Carbide and Related Materials 2019 International Conference on Silicon Carbide and Related Materials 2019 2019/10 公開
Forward Thermionic Field Emission Current and Barrier Height Lowering in Heavily-Doped 4H-SiC Schottky Barrier Diodes Forward Thermionic Field Emission Current and Barrier Height Lowering in Heavily-Doped 4H-SiC Schottky Barrier Diodes Forward Thermionic Field Emission Current and Barrier Height Lowering in Heavily-Doped 4H-SiC Schottky Barrier Diodes International Conference on Silicon Carbide and Related Materials 2019 International Conference on Silicon Carbide and Related Materials 2019 International Conference on Silicon Carbide and Related Materials 2019 2019/10 公開
Temperature Dependence of Impact Ionization Coefficients in 4H-SiC along <11-20> Direction Temperature Dependence of Impact Ionization Coefficients in 4H-SiC along <11-20> Direction Temperature Dependence of Impact Ionization Coefficients in 4H-SiC along <11-20> Direction International Conference on Silicon Carbide and Related Materials 2019 International Conference on Silicon Carbide and Related Materials 2019 International Conference on Silicon Carbide and Related Materials 2019 2019/10 公開
Experimental Study on Short-Channel Effects in Side-Gate SiC JFETs Experimental Study on Short-Channel Effects in Side-Gate SiC JFETs Experimental Study on Short-Channel Effects in Side-Gate SiC JFETs International Conference on Silicon Carbide and Related Materials 2019 International Conference on Silicon Carbide and Related Materials 2019 International Conference on Silicon Carbide and Related Materials 2019 2019/10 公開
Interface State Density Distributions near The Conduction Band Edge Originating from The Conduction Band Fluctuation in SiO2/SiC Systems[招待あり] Interface State Density Distributions near The Conduction Band Edge Originating from The Conduction Band Fluctuation in SiO2/SiC Systems [招待あり] Interface State Density Distributions near The Conduction Band Edge Originating from The Conduction Band Fluctuation in SiO2/SiC Systems [招待あり] International Conference on Silicon Carbide and Related Materials 2019 International Conference on Silicon Carbide and Related Materials 2019 International Conference on Silicon Carbide and Related Materials 2019 2019/10 公開
Reduction of Interface States in 4H-SiC/SiO2 near both Conduction and Valence Band Edges by High-temperature Nitrogen Annealing Reduction of Interface States in 4H-SiC/SiO2 near both Conduction and Valence Band Edges by High-temperature Nitrogen Annealing Reduction of Interface States in 4H-SiC/SiO2 near both Conduction and Valence Band Edges by High-temperature Nitrogen Annealing International Conference on Silicon Carbide and Related Materials 2019 International Conference on Silicon Carbide and Related Materials 2019 International Conference on Silicon Carbide and Related Materials 2019 2019/10 公開
High Avalanche Capability in GaN p-n Junction Diodes Realized by Shallow Beveled-Mesa Structure Combined with Lightly Mg-Doped p-Layers High Avalanche Capability in GaN p-n Junction Diodes Realized by Shallow Beveled-Mesa Structure Combined with Lightly Mg-Doped p-Layers High Avalanche Capability in GaN p-n Junction Diodes Realized by Shallow Beveled-Mesa Structure Combined with Lightly Mg-Doped p-Layers The 51th International Conference on Solid State Devices and Materials The 51th International Conference on Solid State Devices and Materials The 51th International Conference on Solid State Devices and Materials 2019/09 公開
Quick measurement method of carbon-related defect concentration in n-type GaN by dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy Quick measurement method of carbon-related defect concentration in n-type GaN by dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy Quick measurement method of carbon-related defect concentration in n-type GaN by dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy 2019 International Conference on;Solid-State Devices;Materials 2019 International Conference on;Solid-State Devices;Materials 2019 International Conference on;Solid-State Devices;Materials 2019/09 公開
Promise and Future Challenges of SiC Power MOSFETs[招待あり] Promise and Future Challenges of SiC Power MOSFETs [招待あり] Promise and Future Challenges of SiC Power MOSFETs [招待あり] International Conference on Insulating Films on Semiconductors 2019 International Conference on Insulating Films on Semiconductors 2019 International Conference on Insulating Films on Semiconductors 2019 2019/07 公開
Progress and Future Challenges of SiC Power Devices[招待あり] Progress and Future Challenges of SiC Power Devices [招待あり] Progress and Future Challenges of SiC Power Devices [招待あり] Cambridge Power Electronics Colloquium 2019 Cambridge Power Electronics Colloquium 2019 Cambridge Power Electronics Colloquium 2019 2019/07 公開
Photon energy dependence of photoionization cross section ratio of electron to hole for the carbon-related hole trap in n-type GaN Photon energy dependence of photoionization cross section ratio of electron to hole for the carbon-related hole trap in n-type GaN Photon energy dependence of photoionization cross section ratio of electron to hole for the carbon-related hole trap in n-type GaN 30th International Conference on Defects in Semiconductors 30th International Conference on Defects in Semiconductors 30th International Conference on Defects in Semiconductors 2019/07 公開
Determination Methods of H1 Trap Concentration in N-Type GaN Schottky Barriers via Sub-Bandgap-Light Isothermal Capacitance Transient Spectroscopy Determination Methods of H1 Trap Concentration in N-Type GaN Schottky Barriers via Sub-Bandgap-Light Isothermal Capacitance Transient Spectroscopy Determination Methods of H1 Trap Concentration in N-Type GaN Schottky Barriers via Sub-Bandgap-Light Isothermal Capacitance Transient Spectroscopy 13th International Conference on Nitride Semiconductors 13th International Conference on Nitride Semiconductors 13th International Conference on Nitride Semiconductors 2019/07 公開
Estimation of Impact Ionization Coefficient in GaN and Its Temperature Dependence by Photomultiplication Measurements Utilizing Franz-Keldysh Effect Estimation of Impact Ionization Coefficient in GaN and Its Temperature Dependence by Photomultiplication Measurements Utilizing Franz-Keldysh Effect Estimation of Impact Ionization Coefficient in GaN and Its Temperature Dependence by Photomultiplication Measurements Utilizing Franz-Keldysh Effect 13th International Conference on Nitride Semiconductors 13th International Conference on Nitride Semiconductors 13th International Conference on Nitride Semiconductors 2019/07 公開
Growth and Defect Reduction of SiC for Low-Loss Power Devices”[招待あり] Growth and Defect Reduction of SiC for Low-Loss Power Devices” [招待あり] Growth and Defect Reduction of SiC for Low-Loss Power Devices” [招待あり] 2nd Nucreation and Growth Research Conference 2nd Nucreation and Growth Research Conference 2nd Nucreation and Growth Research Conference 2019/06 公開
Estimation of Impact ionization Coefficient in GaN by Photomultiplication Measurements Utilizing Franz-Keldysh Effect Estimation of Impact ionization Coefficient in GaN by Photomultiplication Measurements Utilizing Franz-Keldysh Effect Estimation of Impact ionization Coefficient in GaN by Photomultiplication Measurements Utilizing Franz-Keldysh Effect 31st IEEE International Symposium on Power Semiconductor Devices&ICs 31st IEEE International Symposium on Power Semiconductor Devices&ICs 31st IEEE International Symposium on Power Semiconductor Devices&ICs 2019/05 公開
Coexistence of Interface-Type and Filament-Type Resistive Switching Phenomena in Ti/Pr0.7Ca0.3MnO3/Pt Cells Coexistence of Interface-Type and Filament-Type Resistive Switching Phenomena in Ti/Pr0.7Ca0.3MnO3/Pt Cells Coexistence of Interface-Type and Filament-Type Resistive Switching Phenomena in Ti/Pr0.7Ca0.3MnO3/Pt Cells 2019 Materials Research Society Symposium Spring Meeting 2019 Materials Research Society Symposium Spring Meeting 2019 Materials Research Society Symposium Spring Meeting 2019/04 公開
Effects of Crystallinity and Oxygen Composition on Forming Characteristics in TMO-Based Resistive Switching Cells Effects of Crystallinity and Oxygen Composition on Forming Characteristics in TMO-Based Resistive Switching Cells Effects of Crystallinity and Oxygen Composition on Forming Characteristics in TMO-Based Resistive Switching Cells 2019 Materials Research Society Symposium Spring Meeting 2019 Materials Research Society Symposium Spring Meeting 2019 Materials Research Society Symposium Spring Meeting 2019/04 公開
Impacts of an Asymmetric Stack Structure in TaOx-Based ReRAM Cells on Resistive Switching Characteristics Impacts of an Asymmetric Stack Structure in TaOx-Based ReRAM Cells on Resistive Switching Characteristics Impacts of an Asymmetric Stack Structure in TaOx-Based ReRAM Cells on Resistive Switching Characteristics 2019 Materials Research Society Symposium Spring Meeting 2019 Materials Research Society Symposium Spring Meeting 2019 Materials Research Society Symposium Spring Meeting 2019/04 公開
SiC Power Devices: Overview, Defect Electronics, and Reliability[招待あり] SiC Power Devices: Overview, Defect Electronics, and Reliability [招待あり] SiC Power Devices: Overview, Defect Electronics, and Reliability [招待あり] 2019 IEEE Int. Reliability Physics Symposium 2019 IEEE Int. Reliability Physics Symposium 2019 IEEE Int. Reliability Physics Symposium 2019/03 公開
Defect electronics in SiC for high-voltage power devices and future prospects[招待あり] Defect electronics in SiC for high-voltage power devices and future prospects [招待あり] Defect electronics in SiC for high-voltage power devices and future prospects [招待あり] KIEEME-Silicon Carbide Conference KIEEME-Silicon Carbide Conference KIEEME-Silicon Carbide Conference 2019 公開
Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel Termination Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel Termination Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel Termination 64th International Electron Device Meeting 64th International Electron Device Meeting 64th International Electron Device Meeting 2018/12 公開
Progress in high and ultrahigh voltage silicon carbide device[招待あり] Progress in high and ultrahigh voltage silicon carbide device [招待あり] Progress in high and ultrahigh voltage silicon carbide device [招待あり] 64th International Electron Device Meeting 64th International Electron Device Meeting 64th International Electron Device Meeting 2018/12 公開
DC and AC electrical characteristics of Ta2O5-based ReRAM cells DC and AC electrical characteristics of Ta2O5-based ReRAM cells DC and AC electrical characteristics of Ta2O5-based ReRAM cells 31st International Microprocesses and Nanotechnology Conference 31st International Microprocesses and Nanotechnology Conference 31st International Microprocesses and Nanotechnology Conference 2018/11 公開
Hole occupancy ratio of H1 trap in homoepitaxial n-type GaN under sub-bandgap light irradiation Hole occupancy ratio of H1 trap in homoepitaxial n-type GaN under sub-bandgap light irradiation Hole occupancy ratio of H1 trap in homoepitaxial n-type GaN under sub-bandgap light irradiation International Workshop on Nitride Semiconductors International Workshop on Nitride Semiconductors International Workshop on Nitride Semiconductors 2018/11 公開
Deep levels introduced by electron beam irradiation in the energy range from 100 keV to 2 MeV in MOVPE-grown homoepitaxial n-type GaN Deep levels introduced by electron beam irradiation in the energy range from 100 keV to 2 MeV in MOVPE-grown homoepitaxial n-type GaN Deep levels introduced by electron beam irradiation in the energy range from 100 keV to 2 MeV in MOVPE-grown homoepitaxial n-type GaN International Workshop on Nitride Semiconductors International Workshop on Nitride Semiconductors International Workshop on Nitride Semiconductors 2018/11 公開
DLTS studies of quartz-free-HVPE-grown homoepitaxial n-type GaN DLTS studies of quartz-free-HVPE-grown homoepitaxial n-type GaN DLTS studies of quartz-free-HVPE-grown homoepitaxial n-type GaN International Workshop on Nitride Semiconductors International Workshop on Nitride Semiconductors International Workshop on Nitride Semiconductors 2018/11 公開
Shockley-Read-Hall Lifetime in Homoepitaxial p-GaN Extracted from the Recombination Current in GaN p-n Junction Diodes Shockley-Read-Hall Lifetime in Homoepitaxial p-GaN Extracted from the Recombination Current in GaN p-n Junction Diodes Shockley-Read-Hall Lifetime in Homoepitaxial p-GaN Extracted from the Recombination Current in GaN p-n Junction Diodes International Workshop on Nitride Semiconductors International Workshop on Nitride Semiconductors International Workshop on Nitride Semiconductors 2018/11 公開
Temperature Dependence of Avalanche Multiplication in GaN PN Diodes Measured by Light Absorption Due to Franz-Keldysh Effect Temperature Dependence of Avalanche Multiplication in GaN PN Diodes Measured by Light Absorption Due to Franz-Keldysh Effect Temperature Dependence of Avalanche Multiplication in GaN PN Diodes Measured by Light Absorption Due to Franz-Keldysh Effect International Workshop on Nitride Semiconductors International Workshop on Nitride Semiconductors International Workshop on Nitride Semiconductors 2018/11 公開
Defect electronics in SiC for high-voltage power devices[招待あり] Defect electronics in SiC for high-voltage power devices [招待あり] Defect electronics in SiC for high-voltage power devices [招待あり] 4th Intensive Discussion on Growth of Nitride Semiconductors 4th Intensive Discussion on Growth of Nitride Semiconductors 4th Intensive Discussion on Growth of Nitride Semiconductors 2018/10 公開
Driving Force behind Reset Process in Pt/NiO/Pt Stack Cells Driving Force behind Reset Process in Pt/NiO/Pt Stack Cells Driving Force behind Reset Process in Pt/NiO/Pt Stack Cells 14th International Conference. on Atomically Controlled Surfaces, Interfaces and Nanostructures 14th International Conference. on Atomically Controlled Surfaces, Interfaces and Nanostructures 14th International Conference. on Atomically Controlled Surfaces, Interfaces and Nanostructures 2018/10 公開
SiC power devices: material and device technology[招待あり] SiC power devices: material and device technology [招待あり] SiC power devices: material and device technology [招待あり] International Workshop on Silicon Carbide Material and Device International Workshop on Silicon Carbide Material and Device International Workshop on Silicon Carbide Material and Device 2018/09 公開
Measurement of Avalanche Multiplication Factor in GaN p-n Junction Diode Using Sub-bandgap Light Absorption Due to Franz-Keldysh Effect Measurement of Avalanche Multiplication Factor in GaN p-n Junction Diode Using Sub-bandgap Light Absorption Due to Franz-Keldysh Effect Measurement of Avalanche Multiplication Factor in GaN p-n Junction Diode Using Sub-bandgap Light Absorption Due to Franz-Keldysh Effect 2018 International Conference on Solid-State Devices and Materials 2018 International Conference on Solid-State Devices and Materials 2018 International Conference on Solid-State Devices and Materials 2018/09 公開
Theoretical Analysis of Carrier Lifetimes in SiC by Using Rate Equations Theoretical Analysis of Carrier Lifetimes in SiC by Using Rate Equations Theoretical Analysis of Carrier Lifetimes in SiC by Using Rate Equations European Conference on Silicon Carbide and Related Materials 2018 European Conference on Silicon Carbide and Related Materials 2018 European Conference on Silicon Carbide and Related Materials 2018 2018/09 公開
SiC vertical-channel n- and p-JFETs fully fabricated by ion implantation SiC vertical-channel n- and p-JFETs fully fabricated by ion implantation SiC vertical-channel n- and p-JFETs fully fabricated by ion implantation European Conference on Silicon Carbide and Related Materials 2018 European Conference on Silicon Carbide and Related Materials 2018 European Conference on Silicon Carbide and Related Materials 2018 2018/09 公開
400℃ Operation of Normally-off n- and p-JFETs with a Side-Gate Structure Fabricated by Ion Implantation into a High-Purity Semi-Insulating SiC Substrate 400℃ Operation of Normally-off n- and p-JFETs with a Side-Gate Structure Fabricated by Ion Implantation into a High-Purity Semi-Insulating SiC Substrate 400℃ Operation of Normally-off n- and p-JFETs with a Side-Gate Structure Fabricated by Ion Implantation into a High-Purity Semi-Insulating SiC Substrate European Conference on Silicon Carbide and Related Materials 2018 European Conference on Silicon Carbide and Related Materials 2018 European Conference on Silicon Carbide and Related Materials 2018 2018/09 公開
Impacts of finger numbers on forced current gain in multi-finger 10 kV-class SiC bipolar junction transistors with reduced base spreading resistance Impacts of finger numbers on forced current gain in multi-finger 10 kV-class SiC bipolar junction transistors with reduced base spreading resistance Impacts of finger numbers on forced current gain in multi-finger 10 kV-class SiC bipolar junction transistors with reduced base spreading resistance European Conference on Silicon Carbide and Related Materials 2018 European Conference on Silicon Carbide and Related Materials 2018 European Conference on Silicon Carbide and Related Materials 2018 2018/09 公開
Photocurrent induced by Franz-Keldysh effect in a 4H-SiC p-n junction diode under high reverse bias voltage Photocurrent induced by Franz-Keldysh effect in a 4H-SiC p-n junction diode under high reverse bias voltage Photocurrent induced by Franz-Keldysh effect in a 4H-SiC p-n junction diode under high reverse bias voltage European Conference on Silicon Carbide and Related Materials 2018 European Conference on Silicon Carbide and Related Materials 2018 European Conference on Silicon Carbide and Related Materials 2018 2018/09 公開
Reduction of interface state density in SiC (0001) MOS structures by very-low-oxygen-partial-pressure annealing Reduction of interface state density in SiC (0001) MOS structures by very-low-oxygen-partial-pressure annealing Reduction of interface state density in SiC (0001) MOS structures by very-low-oxygen-partial-pressure annealing European Conference on Silicon Carbide and Related Materials 2018 European Conference on Silicon Carbide and Related Materials 2018 European Conference on Silicon Carbide and Related Materials 2018 2018/09 公開
Modeling of Electron Trapping in SiC MOSFETs Considering Interface-State-Density Distribution Extracted from Gate Characteristics Modeling of Electron Trapping in SiC MOSFETs Considering Interface-State-Density Distribution Extracted from Gate Characteristics Modeling of Electron Trapping in SiC MOSFETs Considering Interface-State-Density Distribution Extracted from Gate Characteristics European Conference on Silicon Carbide and Related Materials 2018 European Conference on Silicon Carbide and Related Materials 2018 European Conference on Silicon Carbide and Related Materials 2018 2018/09 公開
Tunneling current in 4H-SiC p-n junctions at high electric field Tunneling current in 4H-SiC p-n junctions at high electric field Tunneling current in 4H-SiC p-n junctions at high electric field European Conference on Silicon Carbide and Related Materials 2018 European Conference on Silicon Carbide and Related Materials 2018 European Conference on Silicon Carbide and Related Materials 2018 2018/09 公開
Theoretical and experimental investigation of critical condition for expansion/contraction of a single Shockley stacking fault in 4H-SiC” Theoretical and experimental investigation of critical condition for expansion/contraction of a single Shockley stacking fault in 4H-SiC” Theoretical and experimental investigation of critical condition for expansion/contraction of a single Shockley stacking fault in 4H-SiC” European Conference on Silicon Carbide and Related Materials 2018 European Conference on Silicon Carbide and Related Materials 2018 European Conference on Silicon Carbide and Related Materials 2018 2018/09 公開
Fundamentals and future challenges of SiC power device material[招待あり] Fundamentals and future challenges of SiC power device material [招待あり] Fundamentals and future challenges of SiC power device material [招待あり] TIA Power Electronics Summer School TIA Power Electronics Summer School TIA Power Electronics Summer School 2018/08 公開
Accurate estimation of H1 trap concentration in n-type GaN layers Accurate estimation of H1 trap concentration in n-type GaN layers Accurate estimation of H1 trap concentration in n-type GaN layers International Symposium on Growth of Ⅲ-Nitrides International Symposium on Growth of Ⅲ-Nitrides International Symposium on Growth of Ⅲ-Nitrides 2018/08 公開
Measurement of H1 trap concentration in MOVPE-grown homoepitaxial n-type GaN by optical isothermal capacitance transient spectroscopy using sub-bandgap photoexcitation Measurement of H1 trap concentration in MOVPE-grown homoepitaxial n-type GaN by optical isothermal capacitance transient spectroscopy using sub-bandgap photoexcitation Measurement of H1 trap concentration in MOVPE-grown homoepitaxial n-type GaN by optical isothermal capacitance transient spectroscopy using sub-bandgap photoexcitation Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 2018 2018/07 公開
Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode consistently obtained by C-V, I-V and IPE measurements Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode consistently obtained by C-V, I-V and IPE measurements Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode consistently obtained by C-V, I-V and IPE measurements Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 2018 2018/07 公開
Franz-Keldysh effect in GaN Schottky barrier diodes and p-n junction diodes under high reverse bias voltage Franz-Keldysh effect in GaN Schottky barrier diodes and p-n junction diodes under high reverse bias voltage Franz-Keldysh effect in GaN Schottky barrier diodes and p-n junction diodes under high reverse bias voltage 60th Electronic Materials Conference 60th Electronic Materials Conference 60th Electronic Materials Conference 2018/06 公開
Resistance Increase by Overcurrent Suppression in Forming Process in Pt/TiO2/Pt Cells Resistance Increase by Overcurrent Suppression in Forming Process in Pt/TiO2/Pt Cells Resistance Increase by Overcurrent Suppression in Forming Process in Pt/TiO2/Pt Cells 2018 Materials Research Society Symposium Spring Meeting 2018 Materials Research Society Symposium Spring Meeting 2018 Materials Research Society Symposium Spring Meeting 2018/04 公開
Distribution of Forming Characteristics in NiO-Based Resistive Switching Cells with Two Kinds of NiO Crystallinity Distribution of Forming Characteristics in NiO-Based Resistive Switching Cells with Two Kinds of NiO Crystallinity Distribution of Forming Characteristics in NiO-Based Resistive Switching Cells with Two Kinds of NiO Crystallinity 2018 Materials Research Society Symposium Spring Meeting 2018 Materials Research Society Symposium Spring Meeting 2018 Materials Research Society Symposium Spring Meeting 2018/04 公開
Microscopic Mechanism of the Removal of Carbon-Associated Defects at a SiO2/SiC Interface due to Phosphorus Treatment” Microscopic Mechanism of the Removal of Carbon-Associated Defects at a SiO2/SiC Interface due to Phosphorus Treatment” Microscopic Mechanism of the Removal of Carbon-Associated Defects at a SiO2/SiC Interface due to Phosphorus Treatment” CPMD 2017 Workshop CPMD 2017 Workshop CPMD 2017 Workshop 2017/09 公開
Design criterion to avoid on-characteristics deterioration due to base spreading resistance in SiC bipolar junction transistors Design criterion to avoid on-characteristics deterioration due to base spreading resistance in SiC bipolar junction transistors Design criterion to avoid on-characteristics deterioration due to base spreading resistance in SiC bipolar junction transistors Asia-Pacific Workshop on Widegap Semiconductors 2017 Asia-Pacific Workshop on Widegap Semiconductors 2017 Asia-Pacific Workshop on Widegap Semiconductors 2017 2017/09 公開
Breakdown characteristics of 4H-SiC p-n junction diodes with a wide range of doping concentration” Breakdown characteristics of 4H-SiC p-n junction diodes with a wide range of doping concentration” Breakdown characteristics of 4H-SiC p-n junction diodes with a wide range of doping concentration” International Conference on Silicon Carbide and Related Materials 2017 International Conference on Silicon Carbide and Related Materials 2017 International Conference on Silicon Carbide and Related Materials 2017 2017/09 公開
Experimental Study on Short Channel Effects in 4H-SiC MOSFETs Experimental Study on Short Channel Effects in 4H-SiC MOSFETs Experimental Study on Short Channel Effects in 4H-SiC MOSFETs International Conference on Silicon Carbide and Related Materials 2017 International Conference on Silicon Carbide and Related Materials 2017 International Conference on Silicon Carbide and Related Materials 2017 2017/09 公開
Fabrication of full-SiC comb-drive resonators by conduction-type-selective electrochemical etching Fabrication of full-SiC comb-drive resonators by conduction-type-selective electrochemical etching Fabrication of full-SiC comb-drive resonators by conduction-type-selective electrochemical etching International Conference on Silicon Carbide and Related Materials 2017 International Conference on Silicon Carbide and Related Materials 2017 International Conference on Silicon Carbide and Related Materials 2017 2017/09 公開
Electrostatic-energy model for single Shockley stacking fault formation in 4H-SiC crystals[招待あり] Electrostatic-energy model for single Shockley stacking fault formation in 4H-SiC crystals [招待あり] Electrostatic-energy model for single Shockley stacking fault formation in 4H-SiC crystals [招待あり] International Conference on Silicon Carbide and Related Materials 2017 International Conference on Silicon Carbide and Related Materials 2017 International Conference on Silicon Carbide and Related Materials 2017 2017/09 公開
Aluminum doping concentration calibration by photoluminescence in high-quality uncompensated p-type 4H-SiC Aluminum doping concentration calibration by photoluminescence in high-quality uncompensated p-type 4H-SiC Aluminum doping concentration calibration by photoluminescence in high-quality uncompensated p-type 4H-SiC International Conference on Silicon Carbide and Related Materials 2017 International Conference on Silicon Carbide and Related Materials 2017 International Conference on Silicon Carbide and Related Materials 2017 2017/09 公開
Effects of parasitic region in SiC bipolar junction transistors on forced current gain Effects of parasitic region in SiC bipolar junction transistors on forced current gain Effects of parasitic region in SiC bipolar junction transistors on forced current gain International Conference on Silicon Carbide and Related Materials 2017 International Conference on Silicon Carbide and Related Materials 2017 International Conference on Silicon Carbide and Related Materials 2017 2017/09 公開
Evidence of Carbon-Related Defects at the SiC MOS Interface and Mechanism of Defect Passivation by Nitridation and Phosphorus Treatment – Chemical Analyses Combined with DFT Calculations Evidence of Carbon-Related Defects at the SiC MOS Interface and Mechanism of Defect Passivation by Nitridation and Phosphorus Treatment – Chemical Analyses Combined with DFT Calculations Evidence of Carbon-Related Defects at the SiC MOS Interface and Mechanism of Defect Passivation by Nitridation and Phosphorus Treatment – Chemical Analyses Combined with DFT Calculations International Conference on Silicon Carbide and Related Materials 2017 International Conference on Silicon Carbide and Related Materials 2017 International Conference on Silicon Carbide and Related Materials 2017 2017/09 公開
Observation of Oxidation-Induced Carbon-Rich Region in the Near-Interface SiC by High-Resolution STEM-EDX Observation of Oxidation-Induced Carbon-Rich Region in the Near-Interface SiC by High-Resolution STEM-EDX Observation of Oxidation-Induced Carbon-Rich Region in the Near-Interface SiC by High-Resolution STEM-EDX International Conference on Silicon Carbide and Related Materials 2017 International Conference on Silicon Carbide and Related Materials 2017 International Conference on Silicon Carbide and Related Materials 2017 2017/09 公開
400°C operation of SiC n- and p-channel JFETs fabricated by ion implantation into a high-purity semi-insulating substrate 400°C operation of SiC n- and p-channel JFETs fabricated by ion implantation into a high-purity semi-insulating substrate 400°C operation of SiC n- and p-channel JFETs fabricated by ion implantation into a high-purity semi-insulating substrate International Conference on Silicon Carbide and Related Materials 2017 International Conference on Silicon Carbide and Related Materials 2017 International Conference on Silicon Carbide and Related Materials 2017 2017/09 公開
Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation 2017 International Conference on Simulation of Semiconductor Processes and Devices 2017 International Conference on Simulation of Semiconductor Processes and Devices 2017 International Conference on Simulation of Semiconductor Processes and Devices 2017/09 公開
Investigation of hole traps in n-type homoepitaxial GaN by ODLTS focusing on sub-bandgap-light optical excitation process Investigation of hole traps in n-type homoepitaxial GaN by ODLTS focusing on sub-bandgap-light optical excitation process Investigation of hole traps in n-type homoepitaxial GaN by ODLTS focusing on sub-bandgap-light optical excitation process 12th International Conference on Nitride Semiconductors 12th International Conference on Nitride Semiconductors 12th International Conference on Nitride Semiconductors 2017/07 公開
Temperature dependence of Schottky barrier height of Ni/n-GaN consistently obtained by C-V and forward I-V measurements Temperature dependence of Schottky barrier height of Ni/n-GaN consistently obtained by C-V and forward I-V measurements Temperature dependence of Schottky barrier height of Ni/n-GaN consistently obtained by C-V and forward I-V measurements 12th International Conference on Nitride Semiconductors 12th International Conference on Nitride Semiconductors 12th International Conference on Nitride Semiconductors 2017/07 公開
Theoretical Analysis of Quasi-ballistic Hole Transport in Ge and Si Nanowires Focusing on Energy Relaxation Process Theoretical Analysis of Quasi-ballistic Hole Transport in Ge and Si Nanowires Focusing on Energy Relaxation Process Theoretical Analysis of Quasi-ballistic Hole Transport in Ge and Si Nanowires Focusing on Energy Relaxation Process IEEE Silicon Nanoelectronics Workshop 2017 IEEE Silicon Nanoelectronics Workshop 2017 IEEE Silicon Nanoelectronics Workshop 2017 2017/06 公開
Progress and Future Challenges of SiC Material and Power Devices[招待あり] Progress and Future Challenges of SiC Material and Power Devices [招待あり] Progress and Future Challenges of SiC Material and Power Devices [招待あり] Compound Semiconductor Week 2017 Compound Semiconductor Week 2017 Compound Semiconductor Week 2017 2017/05 公開
Understanding and reduction of degradation phenomena in SiC power devices[招待あり] Understanding and reduction of degradation phenomena in SiC power devices [招待あり] Understanding and reduction of degradation phenomena in SiC power devices [招待あり] IEEE 2017 Int. Reliability Physics Symposium IEEE 2017 Int. Reliability Physics Symposium IEEE 2017 Int. Reliability Physics Symposium 2017/04 公開
Control of carrier lifetime and application to ultrahigh-voltage SiC bipolar devices[招待あり] Control of carrier lifetime and application to ultrahigh-voltage SiC bipolar devices [招待あり] Control of carrier lifetime and application to ultrahigh-voltage SiC bipolar devices [招待あり] 2017 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Devices 2017 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Devices 2017 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Devices 2017/03 公開
Intentional introduction of misfit dislocations at AlN/SiC heterointerface Intentional introduction of misfit dislocations at AlN/SiC heterointerface Intentional introduction of misfit dislocations at AlN/SiC heterointerface 6th CIRFE Seminar 6th CIRFE Seminar 6th CIRFE Seminar 2017 公開
MOS channel properties on homoepitaxially-grown p-type GaN layers MOS channel properties on homoepitaxially-grown p-type GaN layers MOS channel properties on homoepitaxially-grown p-type GaN layers 3rd Intensive Discussion on Growth of Nitride Semiconductors 3rd Intensive Discussion on Growth of Nitride Semiconductors 3rd Intensive Discussion on Growth of Nitride Semiconductors 2017/01 公開
Progress and future challenges of SiC power devices[招待あり] Progress and future challenges of SiC power devices [招待あり] Progress and future challenges of SiC power devices [招待あり] 2017 SPIE Phtonics West 2017 SPIE Phtonics West 2017 SPIE Phtonics West 2017/01 公開
Progress and future challenges of high-voltage SiC power devices[招待あり] Progress and future challenges of high-voltage SiC power devices [招待あり] Progress and future challenges of high-voltage SiC power devices [招待あり] 3rd Intensive Discussion on Growth of Nitride Semiconductors 3rd Intensive Discussion on Growth of Nitride Semiconductors 3rd Intensive Discussion on Growth of Nitride Semiconductors 2017/01 公開
Strain controls of high quality AlN layers by misfit dislocations introduces at step edges of SiC(0001) substrates Strain controls of high quality AlN layers by misfit dislocations introduces at step edges of SiC(0001) substrates Strain controls of high quality AlN layers by misfit dislocations introduces at step edges of SiC(0001) substrates International Workshop on Nitride Semiconductors 2016 International Workshop on Nitride Semiconductors 2016 International Workshop on Nitride Semiconductors 2016 2016/10 公開
The appearance condition of quantized conductance in NiO-based resistibe switching cells The appearance condition of quantized conductance in NiO-based resistibe switching cells The appearance condition of quantized conductance in NiO-based resistibe switching cells 2016 Materials Research Society Symposium Fall Meeting 2016 Materials Research Society Symposium Fall Meeting 2016 Materials Research Society Symposium Fall Meeting 2016/09 公開
Lifetime control and breakdown analysis in SiC for ultrahigh-voltage power devices[招待あり] Lifetime control and breakdown analysis in SiC for ultrahigh-voltage power devices [招待あり] Lifetime control and breakdown analysis in SiC for ultrahigh-voltage power devices [招待あり] 2016 Materials Research Society Symposium Fall Meeting 2016 Materials Research Society Symposium Fall Meeting 2016 Materials Research Society Symposium Fall Meeting 2016/09 公開
Impact ionization coefficients in 4H-SiC at high temperatures Impact ionization coefficients in 4H-SiC at high temperatures Impact ionization coefficients in 4H-SiC at high temperatures European Conference on Silicon Carbide and Related Materials 2016 European Conference on Silicon Carbide and Related Materials 2016 European Conference on Silicon Carbide and Related Materials 2016 2016/09 公開
Dependence of surface recombination velocity for 4H-SiC on contacted aqueous solution Dependence of surface recombination velocity for 4H-SiC on contacted aqueous solution Dependence of surface recombination velocity for 4H-SiC on contacted aqueous solution European Conference on Silicon Carbide and Related Materials 2016 European Conference on Silicon Carbide and Related Materials 2016 European Conference on Silicon Carbide and Related Materials 2016 2016/09 公開
Demonstration of 10 kV SiC hybrid unipolar/bipolar operating diodes Demonstration of 10 kV SiC hybrid unipolar/bipolar operating diodes Demonstration of 10 kV SiC hybrid unipolar/bipolar operating diodes European Conference on Silicon Carbide and Related Materials 2016 European Conference on Silicon Carbide and Related Materials 2016 European Conference on Silicon Carbide and Related Materials 2016 2016/09 公開
High selectivity in SiC/SiO2 etching by ICP-RIE in a SF6-O2-Ar chemistry High selectivity in SiC/SiO2 etching by ICP-RIE in a SF6-O2-Ar chemistry High selectivity in SiC/SiO2 etching by ICP-RIE in a SF6-O2-Ar chemistry European Conference on Silicon Carbide and Related Materials 2016 European Conference on Silicon Carbide and Related Materials 2016 European Conference on Silicon Carbide and Related Materials 2016 2016/09 公開
Etching mode in electrochemical etching of p-type 4H-SiC and its impact on suppression of etch pits Etching mode in electrochemical etching of p-type 4H-SiC and its impact on suppression of etch pits Etching mode in electrochemical etching of p-type 4H-SiC and its impact on suppression of etch pits European Conference on Silicon Carbide and Related Materials 2016 European Conference on Silicon Carbide and Related Materials 2016 European Conference on Silicon Carbide and Related Materials 2016 2016/09 公開
Reduction of interface state density in SiC(0001) MOS structures by post-oxidation Ar annealing at high temperature” Reduction of interface state density in SiC(0001) MOS structures by post-oxidation Ar annealing at high temperature” Reduction of interface state density in SiC(0001) MOS structures by post-oxidation Ar annealing at high temperature” European Conference on Silicon Carbide and Related Materials 2016 European Conference on Silicon Carbide and Related Materials 2016 European Conference on Silicon Carbide and Related Materials 2016 2016/09 公開
Theoretical analysis of hole density, hole mobility, and hall scattering factor in p-type 4H-SiC Theoretical analysis of hole density, hole mobility, and hall scattering factor in p-type 4H-SiC Theoretical analysis of hole density, hole mobility, and hall scattering factor in p-type 4H-SiC European Conference on Silicon Carbide and Related Materials 2016 European Conference on Silicon Carbide and Related Materials 2016 European Conference on Silicon Carbide and Related Materials 2016 2016/09 公開
Device-relevant and processing induced deep level traps and recombination centers in 4H-SiC[招待あり] Device-relevant and processing induced deep level traps and recombination centers in 4H-SiC [招待あり] Device-relevant and processing induced deep level traps and recombination centers in 4H-SiC [招待あり] European Conference on Silicon Carbide and Related Materials 2016 European Conference on Silicon Carbide and Related Materials 2016 European Conference on Silicon Carbide and Related Materials 2016 2016/09 公開
Suppression of the forward degradation in 4H-SiC PiN diodes by employing a recombination-enhanced buffer layer Suppression of the forward degradation in 4H-SiC PiN diodes by employing a recombination-enhanced buffer layer Suppression of the forward degradation in 4H-SiC PiN diodes by employing a recombination-enhanced buffer layer European Conference on Silicon Carbide and Related Materials 2016 European Conference on Silicon Carbide and Related Materials 2016 European Conference on Silicon Carbide and Related Materials 2016 2016/09 公開
Origin of shunt current in 4H-SiC mesa p-n diodes passivated by SiO2 with post-oxidation nitridation Origin of shunt current in 4H-SiC mesa p-n diodes passivated by SiO2 with post-oxidation nitridation Origin of shunt current in 4H-SiC mesa p-n diodes passivated by SiO2 with post-oxidation nitridation European Conference on Silicon Carbide and Related Materials 2016 European Conference on Silicon Carbide and Related Materials 2016 European Conference on Silicon Carbide and Related Materials 2016 2016/09 公開
Structure and glide velocity of leading partials for expanding double shockley stacking faults in n+-type 4H-SiC[招待あり] Structure and glide velocity of leading partials for expanding double shockley stacking faults in n+-type 4H-SiC [招待あり] Structure and glide velocity of leading partials for expanding double shockley stacking faults in n+-type 4H-SiC [招待あり] European Conference on Silicon Carbide and Related Materials 2016 European Conference on Silicon Carbide and Related Materials 2016 European Conference on Silicon Carbide and Related Materials 2016 2016/09 公開
Correlation between shapes of shockley stacking faults and structure of basal plane dislocations in 4H-SiC epilayers[招待あり] Correlation between shapes of shockley stacking faults and structure of basal plane dislocations in 4H-SiC epilayers [招待あり] Correlation between shapes of shockley stacking faults and structure of basal plane dislocations in 4H-SiC epilayers [招待あり] European Conference on Silicon Carbide and Related Materials 2016 European Conference on Silicon Carbide and Related Materials 2016 European Conference on Silicon Carbide and Related Materials 2016 2016/09 公開
Periodically aligned misfit dislocations at AlN/SiC heterointerface Periodically aligned misfit dislocations at AlN/SiC heterointerface Periodically aligned misfit dislocations at AlN/SiC heterointerface European Conference on Silicon Carbide and Related Materials 2016 European Conference on Silicon Carbide and Related Materials 2016 European Conference on Silicon Carbide and Related Materials 2016 2016/09 公開
Material for SiC MOSFET fabrication (bulk/epitaxial growth, selection criteria, defects, screening methods)[招待あり] Material for SiC MOSFET fabrication (bulk/epitaxial growth, selection criteria, defects, screening methods) [招待あり] Material for SiC MOSFET fabrication (bulk/epitaxial growth, selection criteria, defects, screening methods) [招待あり] European Conference on Silicon Carbide and Related Materials 2016 European Conference on Silicon Carbide and Related Materials 2016 European Conference on Silicon Carbide and Related Materials 2016 2016/09 公開
Progress and future challenges of SiC power devices[招待あり] Progress and future challenges of SiC power devices [招待あり] Progress and future challenges of SiC power devices [招待あり] Minicolloquium on Advanced Electron Devices Minicolloquium on Advanced Electron Devices Minicolloquium on Advanced Electron Devices 2016/08 公開
Frontiers and future challenges of SiC power devices[招待あり] Frontiers and future challenges of SiC power devices [招待あり] Frontiers and future challenges of SiC power devices [招待あり] TIA Power Electronics Summer School 2016 TIA Power Electronics Summer School 2016 TIA Power Electronics Summer School 2016 2016/08 公開
Dislocation velocity of Shockley partials for stacking fault expansion in heavily-nitrogen-doped 4H-SiC Dislocation velocity of Shockley partials for stacking fault expansion in heavily-nitrogen-doped 4H-SiC Dislocation velocity of Shockley partials for stacking fault expansion in heavily-nitrogen-doped 4H-SiC The 18th International Conference on Crystal Growth and Epitaxy The 18th International Conference on Crystal Growth and Epitaxy The 18th International Conference on Crystal Growth and Epitaxy 2016/08 公開
Extended and point defects in 4H-SiC epitaxial layers[招待あり] Extended and point defects in 4H-SiC epitaxial layers [招待あり] Extended and point defects in 4H-SiC epitaxial layers [招待あり] The 18th International Conference on Crystal Growth and Epitaxy The 18th International Conference on Crystal Growth and Epitaxy The 18th International Conference on Crystal Growth and Epitaxy 2016/08 公開
Bulk and epitaxial growth of SiC[招待あり] Bulk and epitaxial growth of SiC [招待あり] Bulk and epitaxial growth of SiC [招待あり] 16th International Summer School on Crystal Growth 16th International Summer School on Crystal Growth 16th International Summer School on Crystal Growth 2016/08 公開
Long carrier lifetime in SiC epilayers and high-voltage devices[招待あり] Long carrier lifetime in SiC epilayers and high-voltage devices [招待あり] Long carrier lifetime in SiC epilayers and high-voltage devices [招待あり] International Sympsium on SiC Semiconductor in celebration of Jim Choyke International Sympsium on SiC Semiconductor in celebration of Jim Choyke International Sympsium on SiC Semiconductor in celebration of Jim Choyke 2016/08 公開
Insight into phonon scattering in Si nanowires through high-field hole transport: Impacts of boundary condition and comparison with bulk phonon approximation Insight into phonon scattering in Si nanowires through high-field hole transport: Impacts of boundary condition and comparison with bulk phonon approximation Insight into phonon scattering in Si nanowires through high-field hole transport: Impacts of boundary condition and comparison with bulk phonon approximation 33rd International Conference on the Physics of Semiconductors 33rd International Conference on the Physics of Semiconductors 33rd International Conference on the Physics of Semiconductors 2016/08 公開
High-voltage SiC power devices for energy efficiency[招待あり] High-voltage SiC power devices for energy efficiency [招待あり] High-voltage SiC power devices for energy efficiency [招待あり] 1st International Symposium on Power Electronics 2016 1st International Symposium on Power Electronics 2016 1st International Symposium on Power Electronics 2016 2016/07 公開
Theoretical analysis of high-field hole transport in germanium and silicon nanowires Theoretical analysis of high-field hole transport in germanium and silicon nanowires Theoretical analysis of high-field hole transport in germanium and silicon nanowires IEEE Si Nanoelectronics Workshop 2016 IEEE Si Nanoelectronics Workshop 2016 IEEE Si Nanoelectronics Workshop 2016 2016/06 公開
Fundamentals, promise, and future challenges of wide bandgap semiconductor power devices[招待あり] Fundamentals, promise, and future challenges of wide bandgap semiconductor power devices [招待あり] Fundamentals, promise, and future challenges of wide bandgap semiconductor power devices [招待あり] 28th IEEE International Symposium on Power Semiconductor Devices and ICs 28th IEEE International Symposium on Power Semiconductor Devices and ICs 28th IEEE International Symposium on Power Semiconductor Devices and ICs 2016/06 公開
Demonstration of 3 kV 4H-SiC reverse blocking MOSFET Demonstration of 3 kV 4H-SiC reverse blocking MOSFET Demonstration of 3 kV 4H-SiC reverse blocking MOSFET 28th IEEE International Symposium on Power Semiconductor Devices and ICs 28th IEEE International Symposium on Power Semiconductor Devices and ICs 28th IEEE International Symposium on Power Semiconductor Devices and ICs 2016/06 公開
Progress in process technologies for SiC Power devices Progress in process technologies for SiC Power devices Progress in process technologies for SiC Power devices The 229th Electrochemical Society Spring Meeting The 229th Electrochemical Society Spring Meeting The 229th Electrochemical Society Spring Meeting 2016/05 公開
Ion implantation technology in SiC for high-voltage /high-temperature devices Ion implantation technology in SiC for high-voltage /high-temperature devices Ion implantation technology in SiC for high-voltage /high-temperature devices 16th IEEE International Workshop on Junction Technology 16th IEEE International Workshop on Junction Technology 16th IEEE International Workshop on Junction Technology 2016/05 公開
Control of carbon vacancy in SiC toward ultrahigh-voltage devices Control of carbon vacancy in SiC toward ultrahigh-voltage devices Control of carbon vacancy in SiC toward ultrahigh-voltage devices 2016 International Symposium on Photonics and Electronics Science and Engineering 2016 International Symposium on Photonics and Electronics Science and Engineering 2016 International Symposium on Photonics and Electronics Science and Engineering 2016/03 公開
Characterization of stress around 4H-SiC metal-oxide semiconductor field-effect transistor (MOSFET) using Raman spectroscopy Characterization of stress around 4H-SiC metal-oxide semiconductor field-effect transistor (MOSFET) using Raman spectroscopy Characterization of stress around 4H-SiC metal-oxide semiconductor field-effect transistor (MOSFET) using Raman spectroscopy International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 2015/11 公開
Surface passivation on p-type 4H-SiC epitaxial layers by deposited SiO2 with POCl3 annealing Surface passivation on p-type 4H-SiC epitaxial layers by deposited SiO2 with POCl3 annealing Surface passivation on p-type 4H-SiC epitaxial layers by deposited SiO2 with POCl3 annealing International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 2015/10 公開
Oxidation-induced majority and minority carrier traps in n- and p-type 4H-SiC Oxidation-induced majority and minority carrier traps in n- and p-type 4H-SiC Oxidation-induced majority and minority carrier traps in n- and p-type 4H-SiC International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 2015/10 公開
Surface recombination velocities for polished p-type 4H-SiC Surface recombination velocities for polished p-type 4H-SiC Surface recombination velocities for polished p-type 4H-SiC International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 2015/10 公開
Cause for the mobility drop in SiC MOSFETs with heavily-doped p-bodies Cause for the mobility drop in SiC MOSFETs with heavily-doped p-bodies Cause for the mobility drop in SiC MOSFETs with heavily-doped p-bodies International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 2015/10 公開
Electrical properties of n-type and p-type layers formed by ion implantation into high-purity semi-insulating 4H-SiC substrates Electrical properties of n-type and p-type layers formed by ion implantation into high-purity semi-insulating 4H-SiC substrates Electrical properties of n-type and p-type layers formed by ion implantation into high-purity semi-insulating 4H-SiC substrates International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 2015/10 公開
ESR study on hydrogen passivation of intrinsic defects in p-type and semi-insulating 4H-SiC ESR study on hydrogen passivation of intrinsic defects in p-type and semi-insulating 4H-SiC ESR study on hydrogen passivation of intrinsic defects in p-type and semi-insulating 4H-SiC International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 2015/10 公開
Characterization of the interfacial chemical structure of silicon dioxide on 4H-SiC(0001) by Fourier transform infrared spectroscopy Characterization of the interfacial chemical structure of silicon dioxide on 4H-SiC(0001) by Fourier transform infrared spectroscopy Characterization of the interfacial chemical structure of silicon dioxide on 4H-SiC(0001) by Fourier transform infrared spectroscopy International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 2015/10 公開
Carbon interstitial clusters in 4H-SiC Carbon interstitial clusters in 4H-SiC Carbon interstitial clusters in 4H-SiC International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 2015/10 公開
Promise and limitation of ultrahigh-voltage SiC PiN diodes with long carrier lifetimes studied by device simulation Promise and limitation of ultrahigh-voltage SiC PiN diodes with long carrier lifetimes studied by device simulation Promise and limitation of ultrahigh-voltage SiC PiN diodes with long carrier lifetimes studied by device simulation International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 2015/10 公開
Impact ionization coefficients and critical electric field strength in 4H-SiC Impact ionization coefficients and critical electric field strength in 4H-SiC Impact ionization coefficients and critical electric field strength in 4H-SiC International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 2015/10 公開
Control of carrier lifetimes in thick n-type 4H-SiC epilayers by high-temperature annealing Control of carrier lifetimes in thick n-type 4H-SiC epilayers by high-temperature annealing Control of carrier lifetimes in thick n-type 4H-SiC epilayers by high-temperature annealing International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 2015/10 公開
Enhancement of carrier lifetimes in p-type 4H-SiC epitaxial layers[招待あり] Enhancement of carrier lifetimes in p-type 4H-SiC epitaxial layers [招待あり] Enhancement of carrier lifetimes in p-type 4H-SiC epitaxial layers [招待あり] International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 2015/10 公開
Ultrahigh-voltage SiC bipolar devices for future power infrastructure[招待あり] Ultrahigh-voltage SiC bipolar devices for future power infrastructure [招待あり] Ultrahigh-voltage SiC bipolar devices for future power infrastructure [招待あり] International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 2015/10 公開
Temperature dependence of Hall scattering factor in p-type 4H-SiC with various doping concentrations” Temperature dependence of Hall scattering factor in p-type 4H-SiC with various doping concentrations” Temperature dependence of Hall scattering factor in p-type 4H-SiC with various doping concentrations” International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 2015/10 公開
Accurate evaluation of interface state densities of 4H-SiC(0001) MOS structures annealed in POCl3 by C-ψs method Accurate evaluation of interface state densities of 4H-SiC(0001) MOS structures annealed in POCl3 by C-ψs method Accurate evaluation of interface state densities of 4H-SiC(0001) MOS structures annealed in POCl3 by C-ψs method International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 2015/10 公開
Impact of NO annealing on flatband voltage instability due to charge trapping in SiC MOS devices[招待あり] Impact of NO annealing on flatband voltage instability due to charge trapping in SiC MOS devices [招待あり] Impact of NO annealing on flatband voltage instability due to charge trapping in SiC MOS devices [招待あり] International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 International Conference on Silicon Carbide and Related Materials 2015 2015/10 公開
Control of carbon vacancy in SiC toward ultrahigh-voltage power devices[招待あり] Control of carbon vacancy in SiC toward ultrahigh-voltage power devices [招待あり] Control of carbon vacancy in SiC toward ultrahigh-voltage power devices [招待あり] 16th International Conference on Defects-Recognition, Imaging, and Physics in Semiconductors 16th International Conference on Defects-Recognition, Imaging, and Physics in Semiconductors 16th International Conference on Defects-Recognition, Imaging, and Physics in Semiconductors 2015/09 公開
Progress and future challenges of SiC material and power devices[招待あり] Progress and future challenges of SiC material and power devices [招待あり] Progress and future challenges of SiC material and power devices [招待あり] International Workshop on Ultra-Precision Processing for Wide Bandgap Semiconductors 201 International Workshop on Ultra-Precision Processing for Wide Bandgap Semiconductors 201 International Workshop on Ultra-Precision Processing for Wide Bandgap Semiconductors 201 2015/08 公開
Frontiers and future challenges of SiC power devices[招待あり] Frontiers and future challenges of SiC power devices [招待あり] Frontiers and future challenges of SiC power devices [招待あり] TIA Power Electronics Summer School 2015 TIA Power Electronics Summer School 2015 TIA Power Electronics Summer School 2015 2015/08 公開
Carrier lifetime control for ultrahigh-voltage SiC bipolar power devices[招待あり] Carrier lifetime control for ultrahigh-voltage SiC bipolar power devices [招待あり] Carrier lifetime control for ultrahigh-voltage SiC bipolar power devices [招待あり] International Workshop on Frontier Photonic and Electronic Materials and Devices 2015 International Workshop on Frontier Photonic and Electronic Materials and Devices 2015 International Workshop on Frontier Photonic and Electronic Materials and Devices 2015 2015/07 公開
Control of carbon vacancy defects in SiC[招待あり] Control of carbon vacancy defects in SiC [招待あり] Control of carbon vacancy defects in SiC [招待あり] 1st International Symposium SiC Spintronics 1st International Symposium SiC Spintronics 1st International Symposium SiC Spintronics 2015/06 公開
High-quality SiC epitaxial growth using standard chemistry[招待あり] High-quality SiC epitaxial growth using standard chemistry [招待あり] High-quality SiC epitaxial growth using standard chemistry [招待あり] 1st International Symposium SiC Spintronics 1st International Symposium SiC Spintronics 1st International Symposium SiC Spintronics 2015/06 公開
Ultrahigh-voltage technology based on SiC bipolar devices[招待あり] Ultrahigh-voltage technology based on SiC bipolar devices [招待あり] Ultrahigh-voltage technology based on SiC bipolar devices [招待あり] International SiC Power Electronics Applications Workshop 2015 International SiC Power Electronics Applications Workshop 2015 International SiC Power Electronics Applications Workshop 2015 2015/05 公開
Overview of strategic WBG power semiconductor programs in Japan[招待あり] Overview of strategic WBG power semiconductor programs in Japan [招待あり] Overview of strategic WBG power semiconductor programs in Japan [招待あり] International SiC Power Electronics Applications Workshop 2015 International SiC Power Electronics Applications Workshop 2015 International SiC Power Electronics Applications Workshop 2015 2015/05 公開

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著者 著者(日本語) 著者(英語) タイトル タイトル(日本語) タイトル(英語) 出版社 出版社(日本語) 出版社(英語) 出版年月 記述言語 担当区分 公開
薄膜作製応用ハンドブック 薄膜作製応用ハンドブック NTS NTS 2020 分担執筆 公開
Wide Bandgap Semiconductor Power Devices Wide Bandgap Semiconductor Power Devices Wide Bandgap Semiconductor Power Devices Woodhead Publishing Woodhead Publishing 2018 分担執筆 公開
Handbook of Crystal Growth, Volume 3B: Thin Films and Epitaxy, 2nd edition Handbook of Crystal Growth, Volume 3B: Thin Films and Epitaxy, 2nd edition Handbook of Crystal Growth, Volume 3B: Thin Films and Epitaxy, 2nd edition 2014 分担執筆 公開
Fundamentals of Silicon Carbide Technology Fundamentals of Silicon Carbide Technology Fundamentals of Silicon Carbide Technology John Wiley & Sons John Wiley & Sons 2014 共著 公開
Silicon Carbide and Related Materials 2013 Silicon Carbide and Related Materials 2013 Silicon Carbide and Related Materials 2013 Trans Tech Publications Trans Tech Publications 2014 編者 公開
「電気工学ハンドブック」電気学会編 「電気工学ハンドブック」電気学会編 オーム社 オーム社 2013 分担執筆 公開
ワイドギャップ半導体 あけぼのから最前線へ ワイドギャップ半導体 あけぼのから最前線へ 培風館 培風館 2013 共著 公開
Silicon Carbide Epitaxy Silicon Carbide Epitaxy Silicon Carbide Epitaxy Publisher Research Signpost Publisher Research Signpost 2012 共著 公開
木本恒暢 木本恒暢 半導体SiC技術と応用 半導体SiC技術と応用 日刊工業新聞社 日刊工業新聞社 2011 日本語 公開
木本恒暢 木本恒暢 パワーデバイス パワーデバイス 丸善 丸善 2011 日本語 公開
T. Kimoto T. Kimoto T. Kimoto Silicon Carbide, Vol. 1: Growth, Defects, and Novel Applications, Vol.2: Power Devices and Sensors Silicon Carbide, Vol. 1: Growth, Defects, and Novel Applications, Vol.2: Power Devices and Sensors Silicon Carbide, Vol. 1: Growth, Defects, and Novel Applications, Vol.2: Power Devices and Sensors Wiley-VCH Verlag Wiley-VCH Verlag Wiley-VCH Verlag 2010 英語 公開
T. Kimoto T. Kimoto T. Kimoto Silicon Carbide and Related Materials 2007 Silicon Carbide and Related Materials 2007 Silicon Carbide and Related Materials 2007 Trans Tech Publications Trans Tech Publications Trans Tech Publications 2009 英語 公開
木本恒暢 木本恒暢 パワーエレクトロニクスの新展開 パワーエレクトロニクスの新展開 シーエムシー出版 シーエムシー出版 2009 日本語 公開
T. Kimoto T. Kimoto T. Kimoto Silicon Carbide 2006 - Materials, Processing and Devices Silicon Carbide 2006 - Materials, Processing and Devices Silicon Carbide 2006 - Materials, Processing and Devices Mat. Res. Soc. Mat. Res. Soc. Mat. Res. Soc. 2006 英語 公開
T. Kimoto T. Kimoto T. Kimoto Silicon Carbide 2004-Materials, Processing and Devices Silicon Carbide 2004-Materials, Processing and Devices Silicon Carbide 2004-Materials, Processing and Devices Mat. Res. Soc. Mat. Res. Soc. Mat. Res. Soc. 2004 英語 公開
木本 恒暢 木本 恒暢 木本 恒暢 Low Temperature Homoepitaxial Growth of 6H-SiC by VPE Method Low Temperature Homoepitaxial Growth of 6H-SiC by VPE Method Low Temperature Homoepitaxial Growth of 6H-SiC by VPE Method Amorphous and Crystalline Silicon Carbide IV. Spronger-Verlag,31 Amorphous and Crystalline Silicon Carbide IV. Spronger-Verlag,31 Amorphous and Crystalline Silicon Carbide IV. Spronger-Verlag,31 1992 英語 公開

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タイトル言語:
学術賞等
賞の名称(日本語) 賞の名称(英語) 授与組織名(日本語) 授与組織名(英語) 年月
第15回日本結晶成長学会 論文賞 1998
井上研究奨励賞 1999
電子情報通信学会業績賞 2004
IEEE EDS, MFSK Award IEEE EDS, MFSK Award 2005
SSDM 2005 Paper Award SSDM 2005 Paper Award 2006
IEEE Kansai Chapter, Kansai Medal 2007