船戸 充

最終更新日時: 2019/06/14 22:28:42

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氏名(漢字/フリガナ/アルファベット表記)
船戸 充/フナト ミツル/Funato, Mitsuru
所属部署・職名(部局/所属/講座等/職名)
工学研究科/電子工学専攻量子機能工学講座/准教授
学部兼担
部局 所属 講座等 職名
工学部
連絡先住所
種別 住所(日本語) 住所(英語)
職場 〒615-8510 京都府京都市西京区京都大学桂 Kyoto-daigaku Katsura, Nishikyo, Kyoto 615-8510 Japan
所属学会(国内)
学会名(日本語) 学会名(英語)
応用物理学会 The Japan Society of Applied Physics
取得学位
学位名(日本語) 学位名(英語) 大学(日本語) 大学(英語) 取得区分
工学修士 京都大学
博士(工学) 京都大学
出身大学院・研究科等
大学名(日本語) 大学名(英語) 研究科名(日本語) 研究科名(英語) 専攻名(日本語) 専攻名(英語) 修了区分
京都大学 大学院工学研究科修士課程電気工学専攻 修了
出身学校・専攻等
大学名(日本語) 大学名(英語) 学部名(日本語) 学部名(英語) 学科名(日本語) 学科名(英語) 卒業区分
京都大学 工学部電気工学科 卒業
ORCID ID
https://orcid.org/0000-0002-5455-3757
researchmap URL
https://researchmap.jp/read0012716
研究テーマ
(日本語)
光材料の育成および評価
(英語)
Growth and characterizatin of optoelectronic materials
研究概要
(日本語)
窒化物半導体の結晶成長,およぶ物性評価,デバイス応用
(英語)
Crystal growth, characterization, and device applications of nitride semiconductors
論文
著者 著者(日本語) 著者(英語) タイトル タイトル(日本語) タイトル(英語) 書誌情報等 書誌情報等(日本語) 書誌情報等(英語) 出版年月 査読の有無 記述言語 掲載種別 公開
早川 峰洋, 林 佑樹, 長瀬 勇樹, 市川 修平, 熊本 恭介, 柴岡 真美, 船戸 充, 川上 養一 早川 峰洋, 林 佑樹, 長瀬 勇樹, 市川 修平, 熊本 恭介, 柴岡 真美, 船戸 充, 川上 養一 マクロステップ上AlGaN量子細線の光学特性 マクロステップ上AlGaN量子細線の光学特性 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 117, 333 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 117, 333 , 117, 333 2017/11 日本語 研究論文(学術雑誌) 公開
松田 祥伸, 船戸 充, 川上 養一 松田 祥伸, 船戸 充, 川上 養一 極性面フリーなInGaNマルチファセット構造を用いた多波長発光の実現 極性面フリーなInGaNマルチファセット構造を用いた多波長発光の実現 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 116, 357 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 116, 357 , 116, 357 2016/12 日本語 研究論文(学術雑誌) 公開
岸元 克浩, 呉 珮岑, 船戸 充, 川上 養一 岸元 克浩, 呉 珮岑, 船戸 充, 川上 養一 クリーンプロセスによるAlNバルク結晶の成長 クリーンプロセスによるAlNバルク結晶の成長 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 116, 357 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 116, 357 , 116, 357 2016/12 日本語 研究論文(学術雑誌) 公開
船戸 充, 川上 養一 船戸 充, 川上 養一 近接場光学顕微鏡によるInGaN可視発光素子の時空間分解分光 (高時空間分解能の実現に向けた光計測技術) 近接場光学顕微鏡によるInGaN可視発光素子の時空間分解分光 (高時空間分解能の実現に向けた光計測技術) 光学 = Japanese journal of optics : publication of the Optical Society of Japan, 45, 11 光学 = Japanese journal of optics : publication of the Optical Society of Japan, 45, 11 , 45, 11 2016/01 日本語 研究論文(学術雑誌) 公開
石戸 亮祐, 石井 良太, 船戸 充, 川上 養一 石戸 亮祐, 石井 良太, 船戸 充, 川上 養一 多波長励起発光分離法を用いたInGaN薄膜のラマン散乱分光 (電子部品・材料) 多波長励起発光分離法を用いたInGaN薄膜のラマン散乱分光 (電子部品・材料) 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 115, 330 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 115, 330 , 115, 330 2015/01 日本語 研究論文(学術雑誌) 公開
川上 養一, 金田 昭男, 船戸 充 川上 養一, 金田 昭男, 船戸 充 2探針近接場分光技術の開発 (「新たな展開を見せるプラズモン・ナノフォトニクス」特集号) 2探針近接場分光技術の開発 (「新たな展開を見せるプラズモン・ナノフォトニクス」特集号) レーザー研究 = The review of laser engineering : レーザー学会誌, 43, 5 レーザー研究 = The review of laser engineering : レーザー学会誌, 43, 5 , 43, 5 2015/01 日本語 研究論文(学術雑誌) 公開
船戸 充, 川上 養一 船戸 充, 川上 養一 AlGaN系量子井戸の深紫外光物性と電子線励起発光への応用 (特集 深紫外LED高効率化への新たな展開) AlGaN系量子井戸の深紫外光物性と電子線励起発光への応用 (特集 深紫外LED高効率化への新たな展開) オプトロニクス, 33, 2 オプトロニクス, 33, 2 , 33, 2 2014/02 日本語 研究論文(学術雑誌) 公開
尾崎 拓也, 船戸 充, 川上 養一 尾崎 拓也, 船戸 充, 川上 養一 格子整合系ScAlMgO_4基板上でのGaN系窒化物半導体の結晶成長(窒化物半導体光・電子デバイス,材料,関連技術,及び一般) 格子整合系ScAlMgO_4基板上でのGaN系窒化物半導体の結晶成長(窒化物半導体光・電子デバイス,材料,関連技術,及び一般) 電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス, 114, 338 電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス, 114, 338 , 114, 338 2014/01 日本語 研究論文(学術雑誌) 公開
石井 良太, 船戸 充, 川上 養一 石井 良太, 船戸 充, 川上 養一 (Al, Ga)N系半導体の物性予測に向けたGaNとAlNの物性定数の同定(<特集>固体紫外光源を目指した窒化物半導体結晶成長の最前線) (Al, Ga)N系半導体の物性予測に向けたGaNとAlNの物性定数の同定(<特集>固体紫外光源を目指した窒化物半導体結晶成長の最前線) 日本結晶成長学会誌, 41, 3 日本結晶成長学会誌, 41, 3 , 41, 3 2014/01 日本語 研究論文(学術雑誌) 公開
船戸 充, 川上 養一 船戸 充, 川上 養一 蛍光体フリー多色LED : テイラーメイド光源の実現に向けて (特集 LEDと照明) 蛍光体フリー多色LED : テイラーメイド光源の実現に向けて (特集 LEDと照明) ディスプレイ, 18, 2 ディスプレイ, 18, 2 , 18, 2 2012/01 日本語 研究論文(学術雑誌) 公開
石井 良太, 金田 昭男, バナル ライアン, 船戸 充, 川上 養一 石井 良太, 金田 昭男, バナル ライアン, 船戸 充, 川上 養一 窒化アルミニウムの電子状態に対する歪みの効果 窒化アルミニウムの電子状態に対する歪みの効果 電子情報通信学会技術研究報告. CPM, 電子部品・材料, 111, 291 電子情報通信学会技術研究報告. CPM, 電子部品・材料, 111, 291 , 111, 291 2011/11 日本語 研究論文(学術雑誌) 公開
石井 良太, 金田 昭男, バナル ライアン, 船戸 充, 川上 養一 石井 良太, 金田 昭男, バナル ライアン, 船戸 充, 川上 養一 窒化アルミニウムの電子状態に対する歪みの効果(窒化物半導体光・電子デバイス・材料,関連技術,及び一般) 窒化アルミニウムの電子状態に対する歪みの効果(窒化物半導体光・電子デバイス・材料,関連技術,及び一般) 電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス, 111, 292 電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス, 111, 292 , 111, 292 2011/11 日本語 研究論文(学術雑誌) 公開
大音 隆男, Banal Ryan G., 片岡 研, 船戸 充, 川上 養一 大音 隆男, Banal Ryan G., 片岡 研, 船戸 充, 川上 養一 電子線励起したAlGaN/AlN量子井戸からの100mW深紫外発光(窒化物及び混晶半導体デバイス) 電子線励起したAlGaN/AlN量子井戸からの100mW深紫外発光(窒化物及び混晶半導体デバイス) 電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス, 110, 273 電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス, 110, 273 , 110, 273 2010/11 日本語 研究論文(学術雑誌) 公開
橋谷 享, 金田 昭男, 船戸 充, 川上 養一 橋谷 享, 金田 昭男, 船戸 充, 川上 養一 空間時間分解PLによるInGaN/GaN単一量子井戸のキャリア拡散ダイナミクスの評価 : SNOMによるEfficiency droop機構の解明(窒化物及び混晶半導体デバイス) 空間時間分解PLによるInGaN/GaN単一量子井戸のキャリア拡散ダイナミクスの評価 : SNOMによるEfficiency droop機構の解明(窒化物及び混晶半導体デバイス) 電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス, 110, 273 電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス, 110, 273 , 110, 273 2010/11 日本語 研究論文(学術雑誌) 公開
Kojima Kazunobu, Kamon Hiroaki, Funato Mitsuru, Kawakami Yoichi Kojima Kazunobu, Kamon Hiroaki, Funato Mitsuru, Kawakami Yoichi Kojima Kazunobu, Kamon Hiroaki, Funato Mitsuru, Kawakami Yoichi Theoretical investigations on anisotropic optical properties in semipolar and nonpolar InGaN quantum wells Theoretical investigations on anisotropic optical properties in semipolar and nonpolar InGaN quantum wells Theoretical investigations on anisotropic optical properties in semipolar and nonpolar InGaN quantum wells PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 5, 9, 3038-3041 PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 5, 9, 3038-3041 PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 5, 9, 3038-3041 2008 公開
Kojima Kazunobu, Funato Mitsuru, Kawakami Yoichi, Braun Harald, Schwarz Ulrich, Nagahama Shinichi, Mukai Takashi Kojima Kazunobu, Funato Mitsuru, Kawakami Yoichi, Braun Harald, Schwarz Ulrich, Nagahama Shinichi, Mukai Takashi Kojima Kazunobu, Funato Mitsuru, Kawakami Yoichi, Braun Harald, Schwarz Ulrich, Nagahama Shinichi, Mukai Takashi Inhomogeneously broadened optical gain spectra of InGaN quantum well laser diodes Inhomogeneously broadened optical gain spectra of InGaN quantum well laser diodes Inhomogeneously broadened optical gain spectra of InGaN quantum well laser diodes PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 5, 6, 2126-+ PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 5, 6, 2126-+ PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 5, 6, 2126-+ 2008 公開
Funato Mitsuru, Ujita Shinji, Kawakami Yoichi Funato Mitsuru, Ujita Shinji, Kawakami Yoichi Funato Mitsuru, Ujita Shinji, Kawakami Yoichi Metalorganic vapor phase epitaxy of GaN, InN, and AlGaN using 1,1-dimethylhydrazine as a nitrogen source Metalorganic vapor phase epitaxy of GaN, InN, and AlGaN using 1,1-dimethylhydrazine as a nitrogen source Metalorganic vapor phase epitaxy of GaN, InN, and AlGaN using 1,1-dimethylhydrazine as a nitrogen source JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46, 10A, 6767-6772 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46, 10A, 6767-6772 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46, 10A, 6767-6772 2007/10 公開
Kojima Kazunobu, Ueda Masaya, Funato Mitsuru, Kawakami Yoichi Kojima Kazunobu, Ueda Masaya, Funato Mitsuru, Kawakami Yoichi Kojima Kazunobu, Ueda Masaya, Funato Mitsuru, Kawakami Yoichi Photoluminescence and optical reflectance investigation of semipolar and nonpolar GaN Photoluminescence and optical reflectance investigation of semipolar and nonpolar GaN Photoluminescence and optical reflectance investigation of semipolar and nonpolar GaN PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 244, 6, 1853-1856 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 244, 6, 1853-1856 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 244, 6, 1853-1856 2007/06 公開
Kojima Kazunobu, Funato Mitsuru, Kawakami Yoichi, Narukawa Yukio, Mukai Takashi Kojima Kazunobu, Funato Mitsuru, Kawakami Yoichi, Narukawa Yukio, Mukai Takashi Kojima Kazunobu, Funato Mitsuru, Kawakami Yoichi, Narukawa Yukio, Mukai Takashi Suppression mechanism of optical gain formation in InxGa1-xN quantum well structures due to localized carriers Suppression mechanism of optical gain formation in InxGa1-xN quantum well structures due to localized carriers Suppression mechanism of optical gain formation in InxGa1-xN quantum well structures due to localized carriers SOLID STATE COMMUNICATIONS, 140, 3-4, 182-184 SOLID STATE COMMUNICATIONS, 140, 3-4, 182-184 SOLID STATE COMMUNICATIONS, 140, 3-4, 182-184 2006/10 公開
Park Jonwoon, Kaneta Akio, Funato Mitsuru, Kawakami Yoichi Park Jonwoon, Kaneta Akio, Funato Mitsuru, Kawakami Yoichi Park Jonwoon, Kaneta Akio, Funato Mitsuru, Kawakami Yoichi Carrier transport and optical properties of InGaNSQW with embedded AlGaN delta-layer Carrier transport and optical properties of InGaNSQW with embedded AlGaN delta-layer Carrier transport and optical properties of InGaNSQW with embedded AlGaN delta-layer IEEE JOURNAL OF QUANTUM ELECTRONICS, 42, 9-10, 1023-1030 IEEE JOURNAL OF QUANTUM ELECTRONICS, 42, 9-10, 1023-1030 IEEE JOURNAL OF QUANTUM ELECTRONICS, 42, 9-10, 1023-1030 2006/09 公開
Funato Mitsuru, Ueda Masaya, Kawakami Yoichi, Narukawa Yukio, Kosugi Takao, Takahashi Masayoshi, Mukai Takashi Funato Mitsuru, Ueda Masaya, Kawakami Yoichi, Narukawa Yukio, Kosugi Takao, Takahashi Masayoshi, Mukai Takashi Funato Mitsuru, Ueda Masaya, Kawakami Yoichi, Narukawa Yukio, Kosugi Takao, Takahashi Masayoshi, Mukai Takashi Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {1122} GaN bulk substrates Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {1122} GaN bulk substrates Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {1122} GaN bulk substrates JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 45, 24-28, L659-L662 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 45, 24-28, L659-L662 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 45, 24-28, L659-L662 2006/07 公開
Kaneta Akio, Funato Mitsuru, Narukawa Yukio, Mukai Takashi, Kawakami Yoichi Kaneta Akio, Funato Mitsuru, Narukawa Yukio, Mukai Takashi, Kawakami Yoichi Kaneta Akio, Funato Mitsuru, Narukawa Yukio, Mukai Takashi, Kawakami Yoichi Direct correlation between nonradiative recombination centers and threading dislocations in InGaN quantum wells by near-field photoluminescence spectroscopy Direct correlation between nonradiative recombination centers and threading dislocations in InGaN quantum wells by near-field photoluminescence spectroscopy Direct correlation between nonradiative recombination centers and threading dislocations in InGaN quantum wells by near-field photoluminescence spectroscopy PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 3, 6, 1897-1901 PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 3, 6, 1897-1901 PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 3, 6, 1897-1901 2006 公開
Tateishi Kazutaka, Wang Pangpang, Ryuzaki Sou, Funato Mitsuru, Kawakami Yoichi, Okamoto Koichi, Tamada Kaoru Tateishi Kazutaka, Wang Pangpang, Ryuzaki Sou, Funato Mitsuru, Kawakami Yoichi, Okamoto Koichi, Tamada Kaoru Micro-photoluminescence mapping of light emissions from aluminum-coated InGaN/GaN quantum wells Micro-photoluminescence mapping of light emissions from aluminum-coated InGaN/GaN quantum wells APPLIED PHYSICS EXPRESS, 12, 5 , 12, 5 APPLIED PHYSICS EXPRESS, 12, 5 2019/05/01 公開
Sakaki A, Funato M, Miyano M, Okazaki T, Kawakami Y Sakaki A, Funato M, Miyano M, Okazaki T, Kawakami Y Impact of microscopic In fluctuations on the optical properties of In<sub>x</sub>Ga<sub>1-x</sub>N blue light-emitting diodes assessed by low-energy X-ray fluorescence mapping using synchrotron radiation. Impact of microscopic In fluctuations on the optical properties of In<sub>x</sub>Ga<sub>1-x</sub>N blue light-emitting diodes assessed by low-energy X-ray fluorescence mapping using synchrotron radiation. Scientific reports, 9, 1, 3733 , 9, 1, 3733 Scientific reports, 9, 1, 3733 2019/03/06 公開
Minehiro Hayakawa, Shuhei Ichikawa, Mitsuru Funato, Yoichi Kawakami Minehiro Hayakawa, Shuhei Ichikawa, Mitsuru Funato, Yoichi Kawakami Al x Ga1− x N-Based Quantum Wells Fabricated on Macrosteps Effectively Suppressing Nonradiative Recombination Al x Ga1− x N-Based Quantum Wells Fabricated on Macrosteps Effectively Suppressing Nonradiative Recombination Advanced Optical Materials, 7, 2, 1801106 , 7, 2, 1801106 Advanced Optical Materials, 7, 2, 1801106 2019/01/18 公開
Ozaki Takuya, Funato Mitsuru, Kawakami Yoichi Ozaki Takuya, Funato Mitsuru, Kawakami Yoichi Red-emitting In x Ga1−x N/In y Ga1−y N quantum wells grown on lattice-matched In y Ga1−y N/ScAlMgO4(0001) templates Red-emitting In x Ga1−x N/In y Ga1−y N quantum wells grown on lattice-matched In y Ga1−y N/ScAlMgO4(0001) templates Applied Physics Express, 12, 1 , 12, 1 Applied Physics Express, 12, 1 2019/01/01 公開
Ishii Ryota, Shikata Shinichi, Teraji Tokuyuki, Kanda Hisao, Watanabe Hideyuki, Funato Mitsuru, Kawakami Yoichi Ishii Ryota, Shikata Shinichi, Teraji Tokuyuki, Kanda Hisao, Watanabe Hideyuki, Funato Mitsuru, Kawakami Yoichi Isotopic effects on phonons and excitons in diamond studied by deep-ultraviolet continuous-wave photoluminescence spectroscopy Isotopic effects on phonons and excitons in diamond studied by deep-ultraviolet continuous-wave photoluminescence spectroscopy JAPANESE JOURNAL OF APPLIED PHYSICS, 58, 1 , 58, 1 JAPANESE JOURNAL OF APPLIED PHYSICS, 58, 1 2019/01 公開
Ichikawa Shuhei, Funato Mitsuru, Kawakami Yoichi Ichikawa Shuhei, Funato Mitsuru, Kawakami Yoichi Dominant Nonradiative Recombination Paths and Their Activation Processes in AlxGa1-xN-related Materials Dominant Nonradiative Recombination Paths and Their Activation Processes in AlxGa1-xN-related Materials PHYSICAL REVIEW APPLIED, 10, 6 , 10, 6 PHYSICAL REVIEW APPLIED, 10, 6 2018/12/11 公開
Matsuda Yoshinobu, Funato Mitsuru, Kawakami Yoichi Matsuda Yoshinobu, Funato Mitsuru, Kawakami Yoichi Growth Mechanism of Polar-Plane-Free Faceted InGaN Quantum Wells Growth Mechanism of Polar-Plane-Free Faceted InGaN Quantum Wells IEICE TRANSACTIONS ON ELECTRONICS, E101C, 7, 532-536 , E101C, 7, 532-536 IEICE TRANSACTIONS ON ELECTRONICS, E101C, 7, 532-536 2018/07 公開
Akaike Ryota, Ichikawa Shuhei, Funato Mitsuru, Kawakami Yoichi Akaike Ryota, Ichikawa Shuhei, Funato Mitsuru, Kawakami Yoichi AlxGa1-xN-based semipolar deep ultraviolet light-emitting diodes AlxGa1-xN-based semipolar deep ultraviolet light-emitting diodes APPLIED PHYSICS EXPRESS, 11, 6 , 11, 6 APPLIED PHYSICS EXPRESS, 11, 6 2018/06 公開
Sakaki Atsushi, Funato Mitsuru, Kawamura Tomoaki, Araki Jun, Kawakami Yoichi Sakaki Atsushi, Funato Mitsuru, Kawamura Tomoaki, Araki Jun, Kawakami Yoichi Synchrotron radiation microbeam X-ray diffraction for nondestructive assessments of local structural properties of faceted InGaN/GaN quantum wells Synchrotron radiation microbeam X-ray diffraction for nondestructive assessments of local structural properties of faceted InGaN/GaN quantum wells APPLIED PHYSICS EXPRESS, 11, 3 , 11, 3 APPLIED PHYSICS EXPRESS, 11, 3 2018/03 公開
Kataoka Ken, Funato Mitsuru, Kawakami Yoichi Kataoka Ken, Funato Mitsuru, Kawakami Yoichi Development of polychromatic ultraviolet light-emitting diodes based on three-dimensional AlGaN quantum wells Development of polychromatic ultraviolet light-emitting diodes based on three-dimensional AlGaN quantum wells APPLIED PHYSICS EXPRESS, 10, 12 , 10, 12 APPLIED PHYSICS EXPRESS, 10, 12 2017/12 公開
Kazutaka Tateishi, Pangpang Wang, Sou Ryuzaki, Mitsuru Funato, Yoichi Kawakami, Koichi Okamoto, Kaoru Tamada Kazutaka Tateishi, Pangpang Wang, Sou Ryuzaki, Mitsuru Funato, Yoichi Kawakami, Koichi Okamoto, Kaoru Tamada Micro-photoluminescence mapping of surface plasmon enhanced light emissions from InGaN/GaN quantum wells Micro-photoluminescence mapping of surface plasmon enhanced light emissions from InGaN/GaN quantum wells Applied Physics Letters, 111, 17, 172105 , 111, 17, 172105 Applied Physics Letters, 111, 17, 172105 2017/10/23 公開
Ozaki Takuya, Funato Mitsuru, Kawakami Yoichi Ozaki Takuya, Funato Mitsuru, Kawakami Yoichi Origin of temperature-induced luminescence peak shifts from semipolar (11(2)over-bar2) InxGa1-xN quantum wells Origin of temperature-induced luminescence peak shifts from semipolar (11(2)over-bar2) InxGa1-xN quantum wells PHYSICAL REVIEW B, 96, 12 , 96, 12 PHYSICAL REVIEW B, 96, 12 2017/09/18 公開
Okamoto Koichi, Funato Mitsuru, Kawakami Yoichi, Tamada Kaoru Okamoto Koichi, Funato Mitsuru, Kawakami Yoichi, Tamada Kaoru High-efficiency light emission by means of exciton-surface-plasmon coupling High-efficiency light emission by means of exciton-surface-plasmon coupling JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY C-PHOTOCHEMISTRY REVIEWS, 32, 58-77 , 32, 58-77 JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY C-PHOTOCHEMISTRY REVIEWS, 32, 58-77 2017/09 公開
Matsuda Yoshinobu, Funato Mitsuru, Kawakami Yoichi Matsuda Yoshinobu, Funato Mitsuru, Kawakami Yoichi Polychromatic emission from polar-plane-free faceted InGaN quantum wells with high radiative recombination probabilities Polychromatic emission from polar-plane-free faceted InGaN quantum wells with high radiative recombination probabilities APPLIED PHYSICS EXPRESS, 10, 7 , 10, 7 APPLIED PHYSICS EXPRESS, 10, 7 2017/07 公開
Kishimoto Katsuhiro, Funato Mitsuru, Kawakami Yoichi Kishimoto Katsuhiro, Funato Mitsuru, Kawakami Yoichi Effects of Al and N-2 Flow Sequences on the Interface Formation of AlN on Sapphire by EVPE Effects of Al and N-2 Flow Sequences on the Interface Formation of AlN on Sapphire by EVPE CRYSTALS, 7, 5 , 7, 5 CRYSTALS, 7, 5 2017/05 公開
Kataoka Ken, Funato Mitsuru, Kawakami Yoichi Kataoka Ken, Funato Mitsuru, Kawakami Yoichi Deep-ultraviolet polychromatic emission from three-dimensionally structured AlGaN quantum wells Deep-ultraviolet polychromatic emission from three-dimensionally structured AlGaN quantum wells APPLIED PHYSICS EXPRESS, 10, 3 , 10, 3 APPLIED PHYSICS EXPRESS, 10, 3 2017/03 公開
Mitsuru Funato, Mami Shibaoka, Yoichi Kawakami Mitsuru Funato, Mami Shibaoka, Yoichi Kawakami Heteroepitaxy mechanisms of AlN on nitridated c- and a-plane sapphire substrates Heteroepitaxy mechanisms of AlN on nitridated c- and a-plane sapphire substrates Journal of Applied Physics, 121, 8, 085304 , 121, 8, 085304 Journal of Applied Physics, 121, 8, 085304 2017/02/28 公開
Funato Mitsuru, Ichikawa Shuhei, Kumamoto Kyosuke, Kawakami Yoichi Funato Mitsuru, Ichikawa Shuhei, Kumamoto Kyosuke, Kawakami Yoichi Design of Al-rich AlGaN quantum well structures for efficient UV emitters Design of Al-rich AlGaN quantum well structures for efficient UV emitters GALLIUM NITRIDE MATERIALS AND DEVICES XII, 10104 , 10104 GALLIUM NITRIDE MATERIALS AND DEVICES XII, 10104 2017 公開
Wu PeiTsen, Kishimoto Katsuhiro, Funato Mitsuru, Kawakami Yoichi Wu PeiTsen, Kishimoto Katsuhiro, Funato Mitsuru, Kawakami Yoichi Control of Crystal Morphologies and Interface Structures of AlN Grown on Sapphire by Elementary Source Vapor Phase Epitaxy Control of Crystal Morphologies and Interface Structures of AlN Grown on Sapphire by Elementary Source Vapor Phase Epitaxy CRYSTAL GROWTH & DESIGN, 16, 11, 6337-6342 , 16, 11, 6337-6342 CRYSTAL GROWTH & DESIGN, 16, 11, 6337-6342 2016/11 公開
Takanori Kojima, Shota Takano, Ryosuke Hasegawa, Dolf Timmerman, Atsushi Koizumi, Mitsuru Funato, Yoichi Kawakami, Yasufumi Fujiwara Takanori Kojima, Shota Takano, Ryosuke Hasegawa, Dolf Timmerman, Atsushi Koizumi, Mitsuru Funato, Yoichi Kawakami, Yasufumi Fujiwara Control of GaN facet structures through Eu doping toward achieving semipolar { 1 1 ¯ 01 } and { 2 2 ¯ 01 } InGaN/GaN quantum wells Control of GaN facet structures through Eu doping toward achieving semipolar { 1 1 ¯ 01 } and { 2 2 ¯ 01 } InGaN/GaN quantum wells Applied Physics Letters, 109, 18, 182101 , 109, 18, 182101 Applied Physics Letters, 109, 18, 182101 2016/10/31 公開
Kawakami Yoichi, Kaneta Akio, Hashiya Akira, Funato Mitsuru Kawakami Yoichi, Kaneta Akio, Hashiya Akira, Funato Mitsuru Impact of Radiative and Nonradiative Recombination Processes on the Efficiency-Droop Phenomenon in InxGa1-xN Single Quantum Wells Studied by Scanning Near-Field Optical Microscopy Impact of Radiative and Nonradiative Recombination Processes on the Efficiency-Droop Phenomenon in InxGa1-xN Single Quantum Wells Studied by Scanning Near-Field Optical Microscopy PHYSICAL REVIEW APPLIED, 6, 4 , 6, 4 PHYSICAL REVIEW APPLIED, 6, 4 2016/10/26 公開
Funato Mitsuru, Matsufuji Kohei, Kawakami Yoichi Funato Mitsuru, Matsufuji Kohei, Kawakami Yoichi Evaluating the well-to-well distribution of radiative recombination rates in semi-polar (11(2)over-bar2) InGaN multiple-quantum-well light-emitting diodes Evaluating the well-to-well distribution of radiative recombination rates in semi-polar (11(2)over-bar2) InGaN multiple-quantum-well light-emitting diodes APPLIED PHYSICS EXPRESS, 9, 7 , 9, 7 APPLIED PHYSICS EXPRESS, 9, 7 2016/07 公開
Nishinaka Junichi, Funato Mitsuru, Kido Ryohei, Kawakami Yoichi Nishinaka Junichi, Funato Mitsuru, Kido Ryohei, Kawakami Yoichi InGaN/AlGaN stress compensated superlattices coherently grown on semipolar (11(2)over-bar2) GaN substrates InGaN/AlGaN stress compensated superlattices coherently grown on semipolar (11(2)over-bar2) GaN substrates PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 253, 1, 78-83 , 253, 1, 78-83 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 253, 1, 78-83 2016/01 公開
Hayakawa Minehiro, Hayashi Yuki, Ichikawa Shuhei, Funato Mitsuru, Kawakami Yoichi Hayakawa Minehiro, Hayashi Yuki, Ichikawa Shuhei, Funato Mitsuru, Kawakami Yoichi Enhanced radiative recombination probability in AlGaN quantum wires on (0001) vicinal surface Enhanced radiative recombination probability in AlGaN quantum wires on (0001) vicinal surface UV and Higher Energy Photonics: From Materials to Applications, 9926 , 9926 UV and Higher Energy Photonics: From Materials to Applications, 9926 2016 公開
Ichikawa Shuhei, Funato Mitsuru, Kawakami Yoichi Ichikawa Shuhei, Funato Mitsuru, Kawakami Yoichi Approaches to highly efficient UV emitters based on AlGaN quantum wells Approaches to highly efficient UV emitters based on AlGaN quantum wells GALLIUM NITRIDE MATERIALS AND DEVICES XI, 9748 , 9748 GALLIUM NITRIDE MATERIALS AND DEVICES XI, 9748 2016 公開
Wu P, Funato M, Kawakami Y Wu P, Funato M, Kawakami Y Environmentally friendly method to grow wide-bandgap semiconductor aluminum nitride crystals: Elementary source vapor phase epitaxy. Environmentally friendly method to grow wide-bandgap semiconductor aluminum nitride crystals: Elementary source vapor phase epitaxy. Scientific reports, 5, 17405 , 5, 17405 Scientific reports, 5, 17405 2015/11/30 公開
Mitsuru Funato, Ryan G. Banal, Yoichi Kawakami Mitsuru Funato, Ryan G. Banal, Yoichi Kawakami Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wells Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wells AIP Advances, 5, 11, 117115 , 5, 11, 117115 AIP Advances, 5, 11, 117115 2015/11 公開
Ozaki Takuya, Funato Mitsuru, Kawakami Yoichi Ozaki Takuya, Funato Mitsuru, Kawakami Yoichi InGaN-based visible light-emitting diodes on ScAlMgO4(0001) substrates InGaN-based visible light-emitting diodes on ScAlMgO4(0001) substrates APPLIED PHYSICS EXPRESS, 8, 6 , 8, 6 APPLIED PHYSICS EXPRESS, 8, 6 2015/06 公開
Kazutaka Tateishi, Mitsuru Funato, Yoichi Kawakami, Koichi Okamoto, Kaoru Tamada Kazutaka Tateishi, Mitsuru Funato, Yoichi Kawakami, Koichi Okamoto, Kaoru Tamada Highly enhanced green emission from InGaN quantum wells due to surface plasmon resonance on aluminum films Highly enhanced green emission from InGaN quantum wells due to surface plasmon resonance on aluminum films Applied Physics Letters, 106, 12, 121112 , 106, 12, 121112 Applied Physics Letters, 106, 12, 121112 2015/03/23 公開
Yoshiya Iwata, Takao Oto, David Gachet, Ryan G. Banal, Mitsuru Funato, Yoichi Kawakami Yoshiya Iwata, Takao Oto, David Gachet, Ryan G. Banal, Mitsuru Funato, Yoichi Kawakami Co-existence of a few and sub micron inhomogeneities in Al-rich AlGaN/AlN quantum wells Co-existence of a few and sub micron inhomogeneities in Al-rich AlGaN/AlN quantum wells Journal of Applied Physics, 117, 11, 115702 , 117, 11, 115702 Journal of Applied Physics, 117, 11, 115702 2015/03/21 公開
Yoichi Kawakami, Kohei Inoue, Akio Kaneta, Koichi Okamoto, Mitsuru Funato Yoichi Kawakami, Kohei Inoue, Akio Kaneta, Koichi Okamoto, Mitsuru Funato Quantification of the internal quantum efficiency in GaN via analysis of the heat generated by non-radiative recombination processes Quantification of the internal quantum efficiency in GaN via analysis of the heat generated by non-radiative recombination processes Journal of Applied Physics, 117, 10, 105702 , 117, 10, 105702 Journal of Applied Physics, 117, 10, 105702 2015/03/14 公開
Junichi Nishinaka, Mitsuru Funato, Yoichi Kawakami Junichi Nishinaka, Mitsuru Funato, Yoichi Kawakami Markedly distinct growth characteristics of semipolar (112¯2) and (1¯1¯22¯) InGaN epitaxial layers Markedly distinct growth characteristics of semipolar (112¯2) and (1¯1¯22¯) InGaN epitaxial layers Applied Physics Letters, 106, 8, 082105 , 106, 8, 082105 Applied Physics Letters, 106, 8, 082105 2015/02/23 公開
Iwata Yoshiya, Banal Ryan G., Ichikawa Shuhei, Funato Mitsuru, Kawakami Yoichi Iwata Yoshiya, Banal Ryan G., Ichikawa Shuhei, Funato Mitsuru, Kawakami Yoichi Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy JOURNAL OF APPLIED PHYSICS, 117, 7 , 117, 7 JOURNAL OF APPLIED PHYSICS, 117, 7 2015/02/21 公開
Funato Mitsuru, Kawakami Yoichi Funato Mitsuru, Kawakami Yoichi Semi/non-polar nitride quantum wells for high-efficient light emitters Semi/non-polar nitride quantum wells for high-efficient light emitters GALLIUM NITRIDE MATERIALS AND DEVICES X, 9363 , 9363 GALLIUM NITRIDE MATERIALS AND DEVICES X, 9363 2015 公開
Ozaki Takuya, Takagi Yoshinori, Nishinaka Junichi, Funato Mitsuru, Kawakami Yoichi Ozaki Takuya, Takagi Yoshinori, Nishinaka Junichi, Funato Mitsuru, Kawakami Yoichi Metalorganic vapor phase epitaxy of GaN and lattice-matched InGaN on ScAlMgO4(0001) substrates Metalorganic vapor phase epitaxy of GaN and lattice-matched InGaN on ScAlMgO4(0001) substrates APPLIED PHYSICS EXPRESS, 7, 9 , 7, 9 APPLIED PHYSICS EXPRESS, 7, 9 2014/09 公開
Ishii Ryota, Funato Mitsuru, Kawakami Yoichi Ishii Ryota, Funato Mitsuru, Kawakami Yoichi Effects of strong electron-hole exchange and exciton-phonon interactions on the exciton binding energy of aluminum nitride Effects of strong electron-hole exchange and exciton-phonon interactions on the exciton binding energy of aluminum nitride JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 9 , 53, 9 JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 9 2014/09 公開
Oto Takao, Banal Ryan G., Funato Mitsuru, Kawakami Yoichi Oto Takao, Banal Ryan G., Funato Mitsuru, Kawakami Yoichi Optical gain characteristics in Al-rich AlGaN/AlN quantum wells Optical gain characteristics in Al-rich AlGaN/AlN quantum wells APPLIED PHYSICS LETTERS, 104, 18 , 104, 18 APPLIED PHYSICS LETTERS, 104, 18 2014/05/05 公開
Funato Mitsuru, Hayashi Yuki, Kawakami Yoichi Funato Mitsuru, Hayashi Yuki, Kawakami Yoichi Bistable nanofacet structures on vicinal AlN(0001) surfaces Bistable nanofacet structures on vicinal AlN(0001) surfaces JOURNAL OF APPLIED PHYSICS, 115, 10 , 115, 10 JOURNAL OF APPLIED PHYSICS, 115, 10 2014/03/14 公開
Kataoka Ken, Yamaguchi Masanori, Fukushima Kensuke, Funato Mitsuru, Kawakami Yoichi Kataoka Ken, Yamaguchi Masanori, Fukushima Kensuke, Funato Mitsuru, Kawakami Yoichi Multi-wavelength light emission from three-dimensional AlGaN quantum wells fabricated on facet structures Multi-wavelength light emission from three-dimensional AlGaN quantum wells fabricated on facet structures GALLIUM NITRIDE MATERIALS AND DEVICES IX, 8986 , 8986 GALLIUM NITRIDE MATERIALS AND DEVICES IX, 8986 2014 公開
Funato Mitsuru, Kim Yoon Seok, Ochi Yoshiaki, Kaneta Akio, Kawakami Yoichi, Miyoshi Takashi, Nagahama Shin-ichi Funato Mitsuru, Kim Yoon Seok, Ochi Yoshiaki, Kaneta Akio, Kawakami Yoichi, Miyoshi Takashi, Nagahama Shin-ichi Optical Gain Spectra of a (0001) InGaN Green Laser Diode Optical Gain Spectra of a (0001) InGaN Green Laser Diode APPLIED PHYSICS EXPRESS, 6, 12 , 6, 12 APPLIED PHYSICS EXPRESS, 6, 12 2013/12 公開
Funato Mitsuru, Kim Yoon Seok, Hira Takayuki, Kaneta Akio, Kawakami Yoichi, Miyoshi Takashi, Nagahama Shin-ichi Funato Mitsuru, Kim Yoon Seok, Hira Takayuki, Kaneta Akio, Kawakami Yoichi, Miyoshi Takashi, Nagahama Shin-ichi Remarkably Suppressed Luminescence Inhomogeneity in a (0001) InGaN Green Laser Structure Remarkably Suppressed Luminescence Inhomogeneity in a (0001) InGaN Green Laser Structure APPLIED PHYSICS EXPRESS, 6, 11 , 6, 11 APPLIED PHYSICS EXPRESS, 6, 11 2013/11 公開
Banal Ryan G., Akashi Yosuke, Matsuda Kazuhisa, Hayashi Yuki, Funato Mitsuru, Kawakami Yoichi Banal Ryan G., Akashi Yosuke, Matsuda Kazuhisa, Hayashi Yuki, Funato Mitsuru, Kawakami Yoichi Crack-Free Thick AlN Films Obtained by NH3 Nitridation of Sapphire Substrates Crack-Free Thick AlN Films Obtained by NH3 Nitridation of Sapphire Substrates JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 8 , 52, 8 JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 8 2013/08 公開
Ishii Ryota, Kaneta Akio, Funato Mitsuru, Kawakami Yoichi Ishii Ryota, Kaneta Akio, Funato Mitsuru, Kawakami Yoichi Complete set of deformation potentials for AlN determined by reflectance spectroscopy under uniaxial stress Complete set of deformation potentials for AlN determined by reflectance spectroscopy under uniaxial stress PHYSICAL REVIEW B, 87, 23 , 87, 23 PHYSICAL REVIEW B, 87, 23 2013/06/04 公開
Kaneko Mitsuaki, Okumura Hironori, Ishii Ryota, Funato Mitsuru, Kawakami Yoichi, Kimoto Tsunenobu, Suda Jun Kaneko Mitsuaki, Okumura Hironori, Ishii Ryota, Funato Mitsuru, Kawakami Yoichi, Kimoto Tsunenobu, Suda Jun Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001) Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001) APPLIED PHYSICS EXPRESS, 6, 6 , 6, 6 APPLIED PHYSICS EXPRESS, 6, 6 2013/06 公開
Hayashi Yuki, Banal Ryan G., Funato Mitsuru, Kawakami Yoichi Hayashi Yuki, Banal Ryan G., Funato Mitsuru, Kawakami Yoichi Heteroepitaxy between wurtzite and corundum materials Heteroepitaxy between wurtzite and corundum materials JOURNAL OF APPLIED PHYSICS, 113, 18 , 113, 18 JOURNAL OF APPLIED PHYSICS, 113, 18 2013/05/14 公開
Ishii Ryota, Funato Mitsuru, Kawakami Yoichi Ishii Ryota, Funato Mitsuru, Kawakami Yoichi Huge electron-hole exchange interaction in aluminum nitride Huge electron-hole exchange interaction in aluminum nitride PHYSICAL REVIEW B, 87, 16 , 87, 16 PHYSICAL REVIEW B, 87, 16 2013/04/30 公開
Xu X, Funato M, Kawakami Y, Okamoto K, Tamada K Xu X, Funato M, Kawakami Y, Okamoto K, Tamada K Grain size dependence of surface plasmon enhanced photoluminescence. Grain size dependence of surface plasmon enhanced photoluminescence. Optics express, 21, 3, 3145-3151 , 21, 3, 3145-3151 Optics express, 21, 3, 3145-3151 2013/02/11 公開
Funato Mitsuru, Matsuda Kazuhisa, Banal Ryan G., Ishii Ryota, Kawakami Yoichi Funato Mitsuru, Matsuda Kazuhisa, Banal Ryan G., Ishii Ryota, Kawakami Yoichi Strong optical polarization in nonpolar (1(1)over-bar00) AlxGa1-xN/AlN quantum wells Strong optical polarization in nonpolar (1(1)over-bar00) AlxGa1-xN/AlN quantum wells PHYSICAL REVIEW B, 87, 4 , 87, 4 PHYSICAL REVIEW B, 87, 4 2013/01/25 公開
Semipolar Faceting for InGaN-based Polychromatic LEDs Semipolar Faceting for InGaN-based Polychromatic LEDs 2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) 2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) 2013 公開
Kaneta Akio, Kim Yoon-Seok, Funato Mitsuru, Kawakami Yoichi, Enya Yohei, Kyono Takashi, Ueno Masaki, Nakamura Takao Kaneta Akio, Kim Yoon-Seok, Funato Mitsuru, Kawakami Yoichi, Enya Yohei, Kyono Takashi, Ueno Masaki, Nakamura Takao Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a {20(2)over-bar1} GaN Substrate Probed by Scanning Near-Field Optical Microscopy Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a {20(2)over-bar1} GaN Substrate Probed by Scanning Near-Field Optical Microscopy APPLIED PHYSICS EXPRESS, 5, 10 , 5, 10 APPLIED PHYSICS EXPRESS, 5, 10 2012/10 公開
Nishinaka Junichi, Funato Mitsuru, Kawakami Yoichi Nishinaka Junichi, Funato Mitsuru, Kawakami Yoichi Anisotropic lattice relaxation in non-c-plane InGaN/GaN multiple quantum wells Anisotropic lattice relaxation in non-c-plane InGaN/GaN multiple quantum wells JOURNAL OF APPLIED PHYSICS, 112, 3 , 112, 3 JOURNAL OF APPLIED PHYSICS, 112, 3 2012/08/01 公開
Funato Mitsuru, Matsuda Kazuhisa, Banal Ryan G., Ishii Ryota, Kawakami Yoichi Funato Mitsuru, Matsuda Kazuhisa, Banal Ryan G., Ishii Ryota, Kawakami Yoichi Homoepitaxy and Photoluminescence Properties of (0001) AlN Homoepitaxy and Photoluminescence Properties of (0001) AlN APPLIED PHYSICS EXPRESS, 5, 8 , 5, 8 APPLIED PHYSICS EXPRESS, 5, 8 2012/08 公開
Funato Mitsuru, Kotani Teruhisa, Kondou Takeshi, Kawakami Yoichi Funato Mitsuru, Kotani Teruhisa, Kondou Takeshi, Kawakami Yoichi Semipolar {n(n)over-bar01} InGaN/GaN ridge quantum wells (n=1-3) fabricated by a regrowth technique Semipolar {n(n)over-bar01} InGaN/GaN ridge quantum wells (n=1-3) fabricated by a regrowth technique APPLIED PHYSICS LETTERS, 100, 16 , 100, 16 APPLIED PHYSICS LETTERS, 100, 16 2012/04/16 公開
Banal Ryan G., Funato Mitsuru, Kawakami Yoichi Banal Ryan G., Funato Mitsuru, Kawakami Yoichi Extremely high internal quantum efficiencies from AlGaN/AlN quantum wells emitting in the deep ultraviolet spectral region Extremely high internal quantum efficiencies from AlGaN/AlN quantum wells emitting in the deep ultraviolet spectral region APPLIED PHYSICS LETTERS, 99, 1 , 99, 1 APPLIED PHYSICS LETTERS, 99, 1 2011/07/04 公開
Kawakami Y, Kanai A, Kaneta A, Funato M, Kikuchi A, Kishino K Kawakami Y, Kanai A, Kaneta A, Funato M, Kikuchi A, Kishino K Micromirror arrays to assess luminescent nano-objects. Micromirror arrays to assess luminescent nano-objects. The Review of scientific instruments, 82, 5, 053905 , 82, 5, 053905 The Review of scientific instruments, 82, 5, 053905 2011/05 公開
Kim Yoon Seok, Kaneta Akio, Funato Mitsuru, Kawakami Yoichi, Kyono Takashi, Ueno Masaki, Nakamura Takao Kim Yoon Seok, Kaneta Akio, Funato Mitsuru, Kawakami Yoichi, Kyono Takashi, Ueno Masaki, Nakamura Takao Optical Gain Spectroscopy of a Semipolar {20(2)over-bar1}-Oriented Green InGaN Laser Diode Optical Gain Spectroscopy of a Semipolar {20(2)over-bar1}-Oriented Green InGaN Laser Diode APPLIED PHYSICS EXPRESS, 4, 5 , 4, 5 APPLIED PHYSICS EXPRESS, 4, 5 2011/05 公開
Time-resolved photoluminescence of Al-rich AlGaN/AlN quantum wells under selective excitation Time-resolved photoluminescence of Al-rich AlGaN/AlN quantum wells under selective excitation PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 8, 7-8 , 8, 7-8 PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 8, 7-8 2011 公開
Oto Takao, Banal Ryan G., Kataoka Ken, Funato Mitsuru, Kawakami Yoichi Oto Takao, Banal Ryan G., Kataoka Ken, Funato Mitsuru, Kawakami Yoichi 100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam 100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam NATURE PHOTONICS, 4, 11, 767-771 , 4, 11, 767-771 NATURE PHOTONICS, 4, 11, 767-771 2010/11 公開
Kojima Kazunobu, Yamaguchi Atsushi A., Funato Mitsuru, Kawakami Yoichi, Noda Susumu Kojima Kazunobu, Yamaguchi Atsushi A., Funato Mitsuru, Kawakami Yoichi, Noda Susumu Gain Anisotropy Analysis in Green Semipolar InGaN Quantum Wells with Inhomogeneous Broadening Gain Anisotropy Analysis in Green Semipolar InGaN Quantum Wells with Inhomogeneous Broadening JAPANESE JOURNAL OF APPLIED PHYSICS, 49, 8 , 49, 8 JAPANESE JOURNAL OF APPLIED PHYSICS, 49, 8 2010/08 公開
Ishii Ryota, Kaneta Akio, Funato Mitsuru, Kawakami Yoichi Ishii Ryota, Kaneta Akio, Funato Mitsuru, Kawakami Yoichi Strain-Induced Effects on the Electronic Band Structures in GaN/AlGaN Quantum Wells: Impact of Breakdown of the Quasicubic Approximation in GaN Strain-Induced Effects on the Electronic Band Structures in GaN/AlGaN Quantum Wells: Impact of Breakdown of the Quasicubic Approximation in GaN JAPANESE JOURNAL OF APPLIED PHYSICS, 49, 6 , 49, 6 JAPANESE JOURNAL OF APPLIED PHYSICS, 49, 6 2010/06 公開
Ishii Ryota, Kaneta Akio, Funato Mitsuru, Kawakami Yoichi, Yamaguchi Atsushi A. Ishii Ryota, Kaneta Akio, Funato Mitsuru, Kawakami Yoichi, Yamaguchi Atsushi A. All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress: Definite breakdown of the quasicubic approximation All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress: Definite breakdown of the quasicubic approximation PHYSICAL REVIEW B, 81, 15 , 81, 15 PHYSICAL REVIEW B, 81, 15 2010/04/15 公開
Characteristics of high Al-content AlGaN/AlN quantum wells fabricated by modified migration enhanced epitaxy Characteristics of high Al-content AlGaN/AlN quantum wells fabricated by modified migration enhanced epitaxy PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 7, 7-8 , 7, 7-8 PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 7, 7-8 2010 公開
Deep ultraviolet emission mechanisms in highly excited Al0.79Ga0.21N/AlN quantum wells Deep ultraviolet emission mechanisms in highly excited Al0.79Ga0.21N/AlN quantum wells PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 7, 7-8 , 7, 7-8 PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 7, 7-8 2010 公開
Kaneta Akio, Hashimoto Tsuneaki, Nishimura Katsuhito, Funato Mitsuru, Kawakami Yoichi Kaneta Akio, Hashimoto Tsuneaki, Nishimura Katsuhito, Funato Mitsuru, Kawakami Yoichi Visualization of the Local Carrier Dynamics in an InGaN Quantum Well Using Dual-Probe Scanning Near-Field Optical Microscopy Visualization of the Local Carrier Dynamics in an InGaN Quantum Well Using Dual-Probe Scanning Near-Field Optical Microscopy APPLIED PHYSICS EXPRESS, 3, 10 , 3, 10 APPLIED PHYSICS EXPRESS, 3, 10 2010 公開
Funato Mitsuru, Ueda Masaya, Inoue Daisuke, Kawakami Yoichi, Narukawa Yukio, Mukai Takashi Funato Mitsuru, Ueda Masaya, Inoue Daisuke, Kawakami Yoichi, Narukawa Yukio, Mukai Takashi Experimental and Theoretical Considerations of Polarization Field Direction in Semipolar InGaN/GaN Quantum Wells Experimental and Theoretical Considerations of Polarization Field Direction in Semipolar InGaN/GaN Quantum Wells APPLIED PHYSICS EXPRESS, 3, 7 , 3, 7 APPLIED PHYSICS EXPRESS, 3, 7 2010 公開
Funato Mitsuru, Kaneta Akio, Kawakami Yoichi, Enya Yohei, Nishizuka Koji, Ueno Masaki, Nakamura Takao Funato Mitsuru, Kaneta Akio, Kawakami Yoichi, Enya Yohei, Nishizuka Koji, Ueno Masaki, Nakamura Takao Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {20(2)over-bar1} GaN Substrates Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {20(2)over-bar1} GaN Substrates APPLIED PHYSICS EXPRESS, 3, 2 , 3, 2 APPLIED PHYSICS EXPRESS, 3, 2 2010 公開
Kojima Kazunobu, Kamon Hiroaki, Funato Mitsuru, Kawakami Yoichi Kojima Kazunobu, Kamon Hiroaki, Funato Mitsuru, Kawakami Yoichi Optical Anisotropy Control of Non-c-plane InGaN Quantum Wells Optical Anisotropy Control of Non-c-plane InGaN Quantum Wells JAPANESE JOURNAL OF APPLIED PHYSICS, 48, 8 , 48, 8 JAPANESE JOURNAL OF APPLIED PHYSICS, 48, 8 2009/08 公開
Banal Ryan G., Funato Mitsuru, Kawakami Ybichi Banal Ryan G., Funato Mitsuru, Kawakami Ybichi Growth characteristics of AlN on sapphire substrates by modified migration-enhanced epitaxy Growth characteristics of AlN on sapphire substrates by modified migration-enhanced epitaxy JOURNAL OF CRYSTAL GROWTH, 311, 10, 2834-2836 , 311, 10, 2834-2836 JOURNAL OF CRYSTAL GROWTH, 311, 10, 2834-2836 2009/05/01 公開
Funato Mitsuru, Kawakami Yoichi Funato Mitsuru, Kawakami Yoichi Semipolar III Nitride Semiconductors: Crystal Growth, Device Fabrication, and Optical Anisotropy Semipolar III Nitride Semiconductors: Crystal Growth, Device Fabrication, and Optical Anisotropy MRS BULLETIN, 34, 5, 334-340 , 34, 5, 334-340 MRS BULLETIN, 34, 5, 334-340 2009/05 公開
Banal Ryan G., Funato Mitsuru, Kawakami Yoichi Banal Ryan G., Funato Mitsuru, Kawakami Yoichi Surface diffusion during metalorganic vapor phase epitaxy of AlN Surface diffusion during metalorganic vapor phase epitaxy of AlN PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 2, 6, 2, 599-602 , 6, 2, 599-602 PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 2, 6, 2, 599-602 2009 公開
Banal Ryan G., Funato Mitsuru, Kawakamia Yoichi Banal Ryan G., Funato Mitsuru, Kawakamia Yoichi Initial nucleation of AlN grown directly on sapphire substrates by metal-organic vapor phase epitaxy Initial nucleation of AlN grown directly on sapphire substrates by metal-organic vapor phase epitaxy APPLIED PHYSICS LETTERS, 92, 24 , 92, 24 APPLIED PHYSICS LETTERS, 92, 24 2008/06/16 公開
Funato Mitsuru, Kondou Takeshi, Hayashi Keita, Nishiura Shotaro, Ueda Masaya, Kawakami Yoichi, Narukawa Yukio, Mukai Takashi Funato Mitsuru, Kondou Takeshi, Hayashi Keita, Nishiura Shotaro, Ueda Masaya, Kawakami Yoichi, Narukawa Yukio, Mukai Takashi Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting APPLIED PHYSICS EXPRESS, 1, 1 , 1, 1 APPLIED PHYSICS EXPRESS, 1, 1 2008/01 公開

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著者 著者(日本語) 著者(英語) タイトル タイトル(日本語) タイトル(英語) 書誌情報等 書誌情報等(日本語) 書誌情報等(英語) 出版年月 査読の有無 記述言語 掲載種別 公開
A. Kaneta; T. Hira; Y.S. Kim; M. Funato; Y. Kawakami; T. Miyoshi; S.-I. Nagahama A. Kaneta; T. Hira; Y.S. Kim; M. Funato; Y. Kawakami; T. Miyoshi; S.-I. Nagahama A. Kaneta; T. Hira; Y.S. Kim; M. Funato; Y. Kawakami; T. Miyoshi; S.-I. Nagahama Local photoluminescence properties of InGaN green laser structure on (0001) GaN substrate Local photoluminescence properties of InGaN green laser structure on (0001) GaN substrate Local photoluminescence properties of InGaN green laser structure on (0001) GaN substrate Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest 2013 英語 公開
船戸 充; 川上 養一 船戸 充; 川上 養一 蛍光体フリー多色LED : テイラーメイド光源の実現に向けて (特集 LEDと照明) 蛍光体フリー多色LED : テイラーメイド光源の実現に向けて (特集 LEDと照明) ディスプレイ, 18, 2, 51-56 ディスプレイ, 18, 2, 51-56 , 18, 2, 51-56 2012/02 日本語 公開
船戸充;川上養一 船戸充;川上養一 蛍光体フリー白色・多色発光ダイオードの開発 蛍光体フリー白色・多色発光ダイオードの開発 応用物理, 80, 4, 309-313 応用物理, 80, 4, 309-313 , 80, 4, 309-313 2011/04/10 日本語 公開
橋谷享;金田昭男;船戸充;川上養一 橋谷享;金田昭男;船戸充;川上養一 空間時間分解PLによるInGaN/GaN単一量子井戸のキャリア拡散ダイナミクスの評価―SNOMによるEfficiency droop機構の解明― 空間時間分解PLによるInGaN/GaN単一量子井戸のキャリア拡散ダイナミクスの評価―SNOMによるEfficiency droop機構の解明― 電子情報通信学会技術研究報告, 110, 271(ED2010 142-157), 33-36 電子情報通信学会技術研究報告, 110, 271(ED2010 142-157), 33-36 , 110, 271(ED2010 142-157), 33-36 2010/11/04 日本語 公開
大音隆男;BANAL Ryan G.;片岡研;船戸充;川上養一 大音隆男;BANAL Ryan G.;片岡研;船戸充;川上養一 電子線励起したAlGaN/AlN量子井戸からの100mW深紫外発光 電子線励起したAlGaN/AlN量子井戸からの100mW深紫外発光 電子情報通信学会技術研究報告, 110, 271(ED2010 142-157), 37-40 電子情報通信学会技術研究報告, 110, 271(ED2010 142-157), 37-40 , 110, 271(ED2010 142-157), 37-40 2010/11/04 日本語 公開
船戸充;上田雅也;小島一信;川上養一 船戸充;上田雅也;小島一信;川上養一 半極性(11-22)面上InGaN量子井戸の光学特性と緑色レーザー実現の可能性 半極性(11-22)面上InGaN量子井戸の光学特性と緑色レーザー実現の可能性 レーザー研究, 38, 4, 255-260 レーザー研究, 38, 4, 255-260 , 38, 4, 255-260 2010/04/15 日本語 公開
金田 昭男; 船戸 充; 川上 養一 金田 昭男; 船戸 充; 川上 養一 近接場光学顕微鏡によるInGaNナノ構造の発光機構解明と高効率化へのアプローチ (特集 ナノフォトニクス) 近接場光学顕微鏡によるInGaNナノ構造の発光機構解明と高効率化へのアプローチ (特集 ナノフォトニクス) O plus E, 32, 2, 157-164 O plus E, 32, 2, 157-164 , 32, 2, 157-164 2010/02 日本語 公開
K. Kojima; A.A. Yamaguchi; M. Funato; Y. Kawakami; S. Noda K. Kojima; A.A. Yamaguchi; M. Funato; Y. Kawakami; S. Noda K. Kojima; A.A. Yamaguchi; M. Funato; Y. Kawakami; S. Noda Impact of nonpolar plane for deep ultraviolet laser diodes based on AlGaN/AlN quantum wells Impact of nonpolar plane for deep ultraviolet laser diodes based on AlGaN/AlN quantum wells Impact of nonpolar plane for deep ultraviolet laser diodes based on AlGaN/AlN quantum wells Conference Digest - IEEE International Semiconductor Laser Conference, 101-102 Conference Digest - IEEE International Semiconductor Laser Conference, 101-102 Conference Digest - IEEE International Semiconductor Laser Conference, 101-102 2010 英語 公開
橋谷享;金田昭男;船戸充;川上養一 橋谷享;金田昭男;船戸充;川上養一 近接場光学顕微鏡によるInGaN/GaN単一量子井戸構造の発光強度飽和マッピング 近接場光学顕微鏡によるInGaN/GaN単一量子井戸構造の発光強度飽和マッピング 電子情報通信学会技術研究報告, 109, 289(CPM2009 102-133), 37-40 電子情報通信学会技術研究報告, 109, 289(CPM2009 102-133), 37-40 , 109, 289(CPM2009 102-133), 37-40 2009/11/12 日本語 公開
金田 昭男; 上田 雅也; 船戸 充; 川上 養一 金田 昭男; 上田 雅也; 船戸 充; 川上 養一 半極性{11-22}InGaN量子井戸構造の近接場発光マッピング測定 半極性{11-22}InGaN量子井戸構造の近接場発光マッピング測定 電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス,109 (290), pp. 35-38 電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス,109 (290), pp. 35-38 2009/11 日本語 公開
金田昭男;船戸充;川上養一 金田昭男;船戸充;川上養一 近接場光学顕微鏡によるInGaN量子構造の欠陥と光学特性の相関の評価 近接場光学顕微鏡によるInGaN量子構造の欠陥と光学特性の相関の評価 日本結晶成長学会誌, 36, 3, 178-190 日本結晶成長学会誌, 36, 3, 178-190 , 36, 3, 178-190 2009/10 日本語 公開
船戸 充; 川上 養一 船戸 充; 川上 養一 半極性面上InGaN系緑色LDの可能性 (特集 注目の無極性面・半極性面発光デバイス) 半極性面上InGaN系緑色LDの可能性 (特集 注目の無極性面・半極性面発光デバイス) オプトロニクス, 29, 9, 142-145 オプトロニクス, 29, 9, 142-145 , 29, 9, 142-145 2009/09 日本語 公開
川上 養一; 船戸 充 川上 養一; 船戸 充 蛍光体フリー白色・多色LED (特集 発光デバイスの現状と将来(Part 2)無機発光デバイス) 蛍光体フリー白色・多色LED (特集 発光デバイスの現状と将来(Part 2)無機発光デバイス) 未来材料, 9, 7, 18-24 未来材料, 9, 7, 18-24 , 9, 7, 18-24 2009/07 日本語 公開
M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai Multi-color light-emitting diodes based on GaN microstructures Multi-color light-emitting diodes based on GaN microstructures Multi-color light-emitting diodes based on GaN microstructures Proceedings of SPIE - The International Society for Optical Engineering, 7216 Proceedings of SPIE - The International Society for Optical Engineering, 7216 Proceedings of SPIE - The International Society for Optical Engineering, 7216 2009 英語 公開
M. Funato; Y. Kawakami M. Funato; Y. Kawakami M. Funato; Y. Kawakami Semipolar (11-22)-based InGaN/GaN quantum wells for visible light emitters Semipolar (11-22)-based InGaN/GaN quantum wells for visible light emitters Semipolar (11-22)-based InGaN/GaN quantum wells for visible light emitters 2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009 2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009 2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009 2009 英語 公開
M. Funato; Y. Kawakami M. Funato; Y. Kawakami M. Funato; Y. Kawakami Monolithic polychromatic inGaN light-emitting diodes based on micro-facet structures Monolithic polychromatic inGaN light-emitting diodes based on micro-facet structures Monolithic polychromatic inGaN light-emitting diodes based on micro-facet structures Proceedings of International Meeting on Information Display, 8, 1149-1152 Proceedings of International Meeting on Information Display, 8, 1149-1152 Proceedings of International Meeting on Information Display, 8, 1149-1152 2008 英語 公開
U.T. Schwarz; H. Braun; K. Kojima; M. Funato; Y. Kawakami; S. Nagahama; T. Mukai U.T. Schwarz; H. Braun; K. Kojima; M. Funato; Y. Kawakami; S. Nagahama; T. Mukai U.T. Schwarz; H. Braun; K. Kojima; M. Funato; Y. Kawakami; S. Nagahama; T. Mukai Investigation and comparison of optical gain spectra of (Al,In)GaN laser diodes emitting in the 375 nm to 470 nm spectral range Investigation and comparison of optical gain spectra of (Al,In)GaN laser diodes emitting in the 375 nm to 470 nm spectral range Investigation and comparison of optical gain spectra of (Al,In)GaN laser diodes emitting in the 375 nm to 470 nm spectral range Proceedings of SPIE - The International Society for Optical Engineering, 6485 Proceedings of SPIE - The International Society for Optical Engineering, 6485 Proceedings of SPIE - The International Society for Optical Engineering, 6485 2007 英語 公開
T. Matsumoto; N. Kaiwa; S. Yamaguchi; A. Yamamoto; M. Funato; Y. Kawakami T. Matsumoto; N. Kaiwa; S. Yamaguchi; A. Yamamoto; M. Funato; Y. Kawakami T. Matsumoto; N. Kaiwa; S. Yamaguchi; A. Yamamoto; M. Funato; Y. Kawakami Thermoelectric and electrical properties of GaN and InN single crystals Thermoelectric and electrical properties of GaN and InN single crystals Thermoelectric and electrical properties of GaN and InN single crystals AIP Conference Proceedings, 893, 323-324 AIP Conference Proceedings, 893, 323-324 AIP Conference Proceedings, 893, 323-324 2007 英語 公開
Y. Kawakami; M. Ueda; M. Funato; Y. Narukawa; T. Mukai Y. Kawakami; M. Ueda; M. Funato; Y. Narukawa; T. Mukai Y. Kawakami; M. Ueda; M. Funato; Y. Narukawa; T. Mukai Light-emitting devices based on semipolar-oriented InGaN/GaN quantum wells Light-emitting devices based on semipolar-oriented InGaN/GaN quantum wells Light-emitting devices based on semipolar-oriented InGaN/GaN quantum wells IDW \\'07 - Proceedings of the 14th International Display Workshops, 3, 2345-2348 IDW \\'07 - Proceedings of the 14th International Display Workshops, 3, 2345-2348 IDW \\'07 - Proceedings of the 14th International Display Workshops, 3, 2345-2348 2007 英語 公開
J. Park; A. Kaneta; M. Funato; Y. Kawakami J. Park; A. Kaneta; M. Funato; Y. Kawakami J. Park; A. Kaneta; M. Funato; Y. Kawakami Optoelectronic properties of InGaN SQW with embedded AlGaN δ-layer Optoelectronic properties of InGaN SQW with embedded AlGaN δ-layer Optoelectronic properties of InGaN SQW with embedded AlGaN δ-layer 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD \\'06, 9-10 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD \\'06, 9-10 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD \\'06, 9-10 2006 英語 公開
T. Kotani; Y. Hatada; M. Funato; Y. Narukawa; T. Mukai; Y. Kawakami; S. Fujita T. Kotani; Y. Hatada; M. Funato; Y. Narukawa; T. Mukai; Y. Kawakami; S. Fujita T. Kotani; Y. Hatada; M. Funato; Y. Narukawa; T. Mukai; Y. Kawakami; S. Fujita Fabrication and characterization of GaN-based distributed Bragg reflector mirrors for low lasing threshold and integrated photonics Fabrication and characterization of GaN-based distributed Bragg reflector mirrors for low lasing threshold and integrated photonics Fabrication and characterization of GaN-based distributed Bragg reflector mirrors for low lasing threshold and integrated photonics Physica Status Solidi C: Conferences, 2, 7, 2895-2898 Physica Status Solidi C: Conferences, 2, 7, 2895-2898 Physica Status Solidi C: Conferences, 2, 7, 2895-2898 2005 英語 公開
T. Kotani; Y. Hatada; M. Funato; Y. Narukawa; T. Mukai; Y. Kawakami T. Kotani; Y. Hatada; M. Funato; Y. Narukawa; T. Mukai; Y. Kawakami T. Kotani; Y. Hatada; M. Funato; Y. Narukawa; T. Mukai; Y. Kawakami Erratum: Fabrication and characterization of GaN-based distributed Bragg reflector mirrors for low lasing threshold and integrated photonics (Physica Status Solidi C: Conferences (2005) 2:7 (2895-2898)) Erratum: Fabrication and characterization of GaN-based distributed Bragg reflector mirrors for low lasing threshold and integrated photonics (Physica Status Solidi C: Conferences (2005) 2:7 (2895-2898)) Erratum: Fabrication and characterization of GaN-based distributed Bragg reflector mirrors for low lasing threshold and integrated photonics (Physica Status Solidi C: Conferences (2005) 2:7 (2895-2898)) Physica Status Solidi C: Conferences, 2, 7, 2932- Physica Status Solidi C: Conferences, 2, 7, 2932- Physica Status Solidi C: Conferences, 2, 7, 2932- 2005 英語 公開
M. Funato; K. Nishizuka; Y. Kawakami; Y. Narukawa; T. Mukai M. Funato; K. Nishizuka; Y. Kawakami; Y. Narukawa; T. Mukai M. Funato; K. Nishizuka; Y. Kawakami; Y. Narukawa; T. Mukai Efficient luminescence from {11.2} InGaN/GaN quantum wells Efficient luminescence from {11.2} InGaN/GaN quantum wells Efficient luminescence from {11.2} InGaN/GaN quantum wells Materials Research Society Symposium Proceedings, 831, 305-310 Materials Research Society Symposium Proceedings, 831, 305-310 Materials Research Society Symposium Proceedings, 831, 305-310 2005 英語 公開
M. Funato; Y. Kawaguchi; S. Fujita M. Funato; Y. Kawaguchi; S. Fujita M. Funato; Y. Kawaguchi; S. Fujita Proposal to use GaAs(114) substrates for improvement of the optical transition probability in nitride semiconductor quantum wells Proposal to use GaAs(114) substrates for improvement of the optical transition probability in nitride semiconductor quantum wells Proposal to use GaAs(114) substrates for improvement of the optical transition probability in nitride semiconductor quantum wells Materials Research Society Symposium - Proceedings, 798, 347-352 Materials Research Society Symposium - Proceedings, 798, 347-352 Materials Research Society Symposium - Proceedings, 798, 347-352 2003 英語 公開
M. Funato; K. Shimogami; S. Ujita; Y. Kawaguchi; Sz. Fujita; Sg. Fujita M. Funato; K. Shimogami; S. Ujita; Y. Kawaguchi; Sz. Fujita; Sg. Fujita M. Funato; K. Shimogami; S. Ujita; Y. Kawaguchi; Sz. Fujita; Sg. Fujita Indium doping to GaN grown on GaAs{114}B substrates by metalorganic vapor phase epitaxy Indium doping to GaN grown on GaAs{114}B substrates by metalorganic vapor phase epitaxy Indium doping to GaN grown on GaAs{114}B substrates by metalorganic vapor phase epitaxy Physica Status Solidi C: Conferences, 1, 434-437 Physica Status Solidi C: Conferences, 1, 434-437 Physica Status Solidi C: Conferences, 1, 434-437 2002 英語 公開
M. Funato; S. Fujita; S. Fujita M. Funato; S. Fujita; S. Fujita M. Funato; S. Fujita; S. Fujita Optical absorption in ZnSe-GaAs heterovalent quantum structures Optical absorption in ZnSe-GaAs heterovalent quantum structures Optical absorption in ZnSe-GaAs heterovalent quantum structures Materials Research Society Symposium - Proceedings, 535, 71-76 Materials Research Society Symposium - Proceedings, 535, 71-76 Materials Research Society Symposium - Proceedings, 535, 71-76 1999 英語 公開
S. Fujita; M. Funato; D.-C. Park; Y. Ikenaga; S. Fujita S. Fujita; M. Funato; D.-C. Park; Y. Ikenaga; S. Fujita S. Fujita; M. Funato; D.-C. Park; Y. Ikenaga; S. Fujita Electrical characterization of MOVPE-grown p-type GaN:Mg against annealing temperature Electrical characterization of MOVPE-grown p-type GaN:Mg against annealing temperature Electrical characterization of MOVPE-grown p-type GaN:Mg against annealing temperature Materials Research Society Symposium - Proceedings, 537, G6.31 Materials Research Society Symposium - Proceedings, 537, G6.31 Materials Research Society Symposium - Proceedings, 537, G6.31 1999 英語 公開
Mitsuru Funato; Satoshi Aoki; Shizuo Fujita; Shigeo Fujita Mitsuru Funato; Satoshi Aoki; Shizuo Fujita; Shigeo Fujita Mitsuru Funato; Satoshi Aoki; Shizuo Fujita; Shigeo Fujita Formation of ZnSe/GaAs heterovalent heterostructures by MOVPE Formation of ZnSe/GaAs heterovalent heterostructures by MOVPE Formation of ZnSe/GaAs heterovalent heterostructures by MOVPE Materials Research Society Symposium - Proceedings, 448, 107-112 Materials Research Society Symposium - Proceedings, 448, 107-112 Materials Research Society Symposium - Proceedings, 448, 107-112 1997 英語 公開

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タイトル言語:
学術賞等
賞の名称(日本語) 賞の名称(英語) 授与組織名(日本語) 授与組織名(英語) 年月
安藤博記念学術奨励賞 一般財団法人 安藤研究所 The foundation of ANDO laboratory 1998
トロフィー賞 Trophy Award 米 材料学会 Materials Research Society 2005
第29回応用物理学会論文賞 29th JSAP Outstanding Paper Award 応用物理学会 The Japan Society of Applied Physics 2007/09/04
優秀論文賞 Best Paper Award CLEO PR CLEO PR 2013/07/
APEX/JJAP編集貢献賞 APEX/JJAP Editorial Contribution Award 応用物理学会 The Japan Society of Applied Physics 2014/04/09
第36回応用物理学会論文賞 36th JSAP Outstanding Paper Award 応用物理学会 The Japan Society of Applied Physics 2014/09/17
外部資金:競争的資金・科学研究費補助金
種別 代表/分担 テーマ(日本語) テーマ(英語) 期間
基盤研究(A) 代表 新規半極性結晶面上での窒化物半導体緑色レーザの開発 2007〜2009
挑戦的萌芽研究 代表 再利用が可能な基板上での窒化物半導体発光素子の作製 (平成28年度分) 2016/04/01〜2017/03/31
基盤研究(A) 代表 AlGaN系超高効率紫外発光素子の実現に向けたキャリア再結合過程の解明と制御 (平成28年度分) 2016/04/01〜2017/03/31
挑戦的萌芽研究 代表 再利用が可能な基板上での窒化物半導体発光素子の作製 (平成29年度分) 2017/04/01〜2018/03/31
基盤研究(A) 代表 AlGaN系超高効率紫外発光素子の実現に向けたキャリア再結合過程の解明と制御 (平成29年度分) 2017/04/01〜2018/03/31
基盤研究(A) 代表 AlGaN系超高効率紫外発光素子の実現に向けたキャリア再結合過程の解明と制御 (平成30年度分) 2018/04/01〜2019/03/31
外部資金:競争的資金・科学研究費補助金以外
制度名 代表者名 研究課題(日本語) 研究課題(英語) 期間
II-VI/III-V異族半導体多層構造に関する研究 Study on II-VI/III-V hetero-valent multilayered structures 1990〜2000
立方晶GaNの有機金属気相成長 MOVPE of cubic GaN 1997〜
六方晶 GaN の有機金属気相成長 MOVPE of Hexagonal GaN 1999〜
担当科目
講義名(日本語) 講義名(英語) 開講期 学部/研究科 年度
光工学2 前期 工学部 2011/04〜2012/03
光工学1 後期 工学部 2011/04〜2012/03
光物性工学 前期 工学研究科 2011/04〜2012/03
光工学1 Fundamentals of Optical Engineering 1 後期 工学部 2012/04〜2013/03
光工学2 Fundamentals of Optical Engineering 2 前期 工学部 2012/04〜2013/03
光物性工学 Optical Properties and Engineering 前期 工学研究科 2012/04〜2013/03
光工学1 Fundamentals of Optical Engineering 1 後期 工学部 2013/04〜2014/03
光工学2 Fundamentals of Optical Engineering 2 前期 工学部 2013/04〜2014/03
光物性工学 Optical Properties and Engineering 前期 工学研究科 2013/04〜2014/03
光工学1 Fundamentals of Optical Engineering 1 後期 工学部 2014/04〜2015/03
光工学2 Fundamentals of Optical Engineering 2 前期 工学部 2014/04〜2015/03
電気電子工学実験A Electrical and Electronic Engineering Practice A 前期 工学部 2014/04〜2015/03
電気電子工学実験B Electrical and Electronic Engineering Practice B 後期 工学部 2014/04〜2015/03
電気電子工学実習A Electrical and Electronic Engineering Advanced Practice A 前期 工学部 2014/04〜2015/03
電気電子工学実習B Electrical and Electronic Engineering Advanced Practice B 後期 工学部 2014/04〜2015/03
光物性工学 Optical Properties and Engineering 前期 工学研究科 2014/04〜2015/03
光工学1 Fundamentals of Optical Engineering 1 後期 工学部 2015/04〜2016/03
光工学2 Fundamentals of Optical Engineering 2 前期 工学部 2015/04〜2016/03
光物性工学 Optical Properties and Engineering 前期 工学研究科 2015/04〜2016/03
光工学1 Fundamentals of Optical Engineering 1 後期 工学部 2016/04〜2017/03
光工学2 Fundamentals of Optical Engineering 2 前期 工学部 2016/04〜2017/03
光物性工学 Optical Properties and Engineering 前期 工学研究科 2016/04〜2017/03
光工学1 Fundamentals of Optical Engineering 1 後期 工学部 2017/04〜2018/03
光工学2 Fundamentals of Optical Engineering 2 前期 工学部 2017/04〜2018/03
光物性工学 Optical Properties and Engineering 前期 工学研究科 2017/04〜2018/03
電気電子工学実験 Practice of Electrical and Electronic Engineering 前期 工学部 2017/04〜2018/03
光工学1 Fundamentals of Optical Engineering 1 後期 工学部 2018/04〜2019/03
光工学2 Fundamentals of Optical Engineering 2 前期 工学部 2018/04〜2019/03
光物性工学 Optical Properties and Engineering 前期 工学研究科 2018/04〜2019/03
電気電子工学実験 Practice of Electrical and Electronic Engineering 前期 工学部 2018/04〜2019/03
光工学1 Fundamentals of Optical Engineering 1 後期 工学部 2019/04〜2020/03
光工学2 Fundamentals of Optical Engineering 2 前期 工学部 2019/04〜2020/03
光物性工学 Optical Properties and Engineering 前期 工学研究科 2019/04〜2020/03
電気電子工学実験 Practice of Electrical and Electronic Engineering 前期 工学部 2019/04〜2020/03

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部局運営(役職等)
役職名 期間
工学研究科附属桂インテックセンター運営委員会 委員 2014/04/01〜2016/03/31
工学研究科・工学部化学物質管理委員会 委員 2007/04/01〜2019/03/31