田中 一

最終更新日時: 2019/09/25 01:25:21

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氏名(漢字/フリガナ/アルファベット表記)
田中 一/タナカ ハジメ/Tanaka, Hajime
所属部署・職名(部局/所属/講座等/職名)
大学院横断教育プログラム推進センター/先端光・電子デバイス創成学卓越大学院/特定助教
取得学位
学位名(日本語) 学位名(英語) 大学(日本語) 大学(英語) 取得区分
修士(工学) 京都大学
博士(工学) 京都大学
出身大学院・研究科等
大学名(日本語) 大学名(英語) 研究科名(日本語) 研究科名(英語) 専攻名(日本語) 専攻名(英語) 修了区分
京都大学 大学院工学研究科修士課程電子工学専攻 修了
京都大学 大学院工学研究科博士後期課程電子工学専攻 修了
出身学校・専攻等
大学名(日本語) 大学名(英語) 学部名(日本語) 学部名(英語) 学科名(日本語) 学科名(英語) 卒業区分
京都大学 工学部電気電子工学科 卒業
ORCID ID
https://orcid.org/0000-0001-9728-5687
researchmap URL
https://researchmap.jp/tanaka-hajime
論文
著者 著者(日本語) 著者(英語) タイトル タイトル(日本語) タイトル(英語) 書誌情報等 書誌情報等(日本語) 書誌情報等(英語) 出版年月 査読の有無 記述言語 掲載種別 公開
T Maeda, X Chi, H Tanaka, M Horita, J Suda, T Kimoto T Maeda, X Chi, H Tanaka, M Horita, J Suda, T Kimoto T Maeda, X Chi, H Tanaka, M Horita, J Suda, T Kimoto Franz–Keldysh effect in 4H-SiC p–n junction diodes under high electric field along the <11-20> direction Franz–Keldysh effect in 4H-SiC p–n junction diodes under high electric field along the <11-20> direction Franz–Keldysh effect in 4H-SiC p–n junction diodes under high electric field along the <11-20> direction Japanese Journal of Applied Physics, 58, 9, 091007 Japanese Journal of Applied Physics, 58, 9, 091007 Japanese Journal of Applied Physics, 58, 9, 091007 2019/08 公開
Keita Tachiki, Takahisa Ono, Takuma Kobayashi, Hajime Tanaka, Tsunenobu Kimoto Keita Tachiki, Takahisa Ono, Takuma Kobayashi, Hajime Tanaka, Tsunenobu Kimoto Keita Tachiki, Takahisa Ono, Takuma Kobayashi, Hajime Tanaka, Tsunenobu Kimoto Estimation of Threshold Voltage in SiC Short-Channel MOSFETs Estimation of Threshold Voltage in SiC Short-Channel MOSFETs Estimation of Threshold Voltage in SiC Short-Channel MOSFETs IEEE Transactions on Electron Devices, 65, 7, 3077 IEEE Transactions on Electron Devices, 65, 7, 3077 IEEE Transactions on Electron Devices, 65, 7, 3077 2018/07 公開
Tanaka H, Suda J, Kimoto T. Tanaka H, Suda J, Kimoto T. Tanaka H, Suda J, Kimoto T. Impacts of energy relaxation process on quasi-ballistic hole transport capability in germanium and silicon nanowires Impacts of energy relaxation process on quasi-ballistic hole transport capability in germanium and silicon nanowires Impacts of energy relaxation process on quasi-ballistic hole transport capability in germanium and silicon nanowires Journal of Applied Physics, 123, 2, 024305 Journal of Applied Physics, 123, 2, 024305 Journal of Applied Physics, 123, 2, 024305 2018 公開
Tanaka H, Asada S, Kimoto T, Suda J. Tanaka H, Asada S, Kimoto T, Suda J. Tanaka H, Asada S, Kimoto T, Suda J. Theoretical analysis of Hall factor and hole mobility in p-type 4H-SiC considering anisotropic valence band structure Theoretical analysis of Hall factor and hole mobility in p-type 4H-SiC considering anisotropic valence band structure Theoretical analysis of Hall factor and hole mobility in p-type 4H-SiC considering anisotropic valence band structure Journal of Applied Physics, 123, 24, 245704 Journal of Applied Physics, 123, 24, 245704 Journal of Applied Physics, 123, 24, 245704 2018 公開
Tanaka H, Suda J, Kimoto T. Tanaka H, Suda J, Kimoto T. Tanaka H, Suda J, Kimoto T. Analysis of High-Field Hole Transport in Germanium and Silicon Nanowires Based on Boltzmann's Transport Equation Analysis of High-Field Hole Transport in Germanium and Silicon Nanowires Based on Boltzmann's Transport Equation Analysis of High-Field Hole Transport in Germanium and Silicon Nanowires Based on Boltzmann's Transport Equation IEEE Transactions on Nanotechnology, 16, 1, 118-125 IEEE Transactions on Nanotechnology, 16, 1, 118-125 IEEE Transactions on Nanotechnology, 16, 1, 118-125 2017 公開
Hajime Tanaka, Jun Suda, Tsunenobu Kimoto Hajime Tanaka, Jun Suda, Tsunenobu Kimoto Hajime Tanaka, Jun Suda, Tsunenobu Kimoto Analysis of ballistic and quasi-ballistic hole transport properties in germanium nanowires based on an extended “Top of the Barrier” model Analysis of ballistic and quasi-ballistic hole transport properties in germanium nanowires based on an extended “Top of the Barrier” model Analysis of ballistic and quasi-ballistic hole transport properties in germanium nanowires based on an extended “Top of the Barrier” model Solid-State Electronics, 123, 143 Solid-State Electronics, 123, 143 Solid-State Electronics, 123, 143 2016/09 公開
Hajime Tanaka, Jun Suda, Tsunenobu Kimoto Hajime Tanaka, Jun Suda, Tsunenobu Kimoto Hajime Tanaka, Jun Suda, Tsunenobu Kimoto Modeling of surface roughness scattering in nanowires based on atomistic wave function: Application to hole mobility in rectangular germanium nanowires Modeling of surface roughness scattering in nanowires based on atomistic wave function: Application to hole mobility in rectangular germanium nanowires Modeling of surface roughness scattering in nanowires based on atomistic wave function: Application to hole mobility in rectangular germanium nanowires Physical Review B, 93, 15, 155303 Physical Review B, 93, 15, 155303 Physical Review B, 93, 15, 155303 2016/04 公開
Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto Phonon-Limited Electron Mobility in Rectangular Cross-Sectional Ge Nanowires Phonon-Limited Electron Mobility in Rectangular Cross-Sectional Ge Nanowires Phonon-Limited Electron Mobility in Rectangular Cross-Sectional Ge Nanowires IEEE Transactions on Electron Devices, 61, 6, 1993 IEEE Transactions on Electron Devices, 61, 6, 1993 IEEE Transactions on Electron Devices, 61, 6, 1993 2014/06 公開
Tanaka H, Mori S, Morioka N, Suda J, Kimoto T. Tanaka H, Mori S, Morioka N, Suda J, Kimoto T. Tanaka H, Mori S, Morioka N, Suda J, Kimoto T. Geometrical and band-structure effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires Geometrical and band-structure effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires Geometrical and band-structure effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires Journal of Applied Physics, 116, 23, 235701 Journal of Applied Physics, 116, 23, 235701 Journal of Applied Physics, 116, 23, 235701 2014 公開
Tanaka H, Morioka N, Mori S, Suda J, Kimoto T. Tanaka H, Morioka N, Mori S, Suda J, Kimoto T. Tanaka H, Morioka N, Mori S, Suda J, Kimoto T. Quantum-confinement effects on conduction band structure of rectangular cross-sectional GaAs nanowires Quantum-confinement effects on conduction band structure of rectangular cross-sectional GaAs nanowires Quantum-confinement effects on conduction band structure of rectangular cross-sectional GaAs nanowires Journal of Applied Physics, 115, 5, 053713 Journal of Applied Physics, 115, 5, 053713 Journal of Applied Physics, 115, 5, 053713 2014 公開
タイトル言語:
Misc
著者 著者(日本語) 著者(英語) タイトル タイトル(日本語) タイトル(英語) 書誌情報等 書誌情報等(日本語) 書誌情報等(英語) 出版年月 査読の有無 記述言語 掲載種別 公開
Tanaka H, Suda J, Kimoto T. Tanaka H, Suda J, Kimoto T. Tanaka H, Suda J, Kimoto T. Insight into phonon scattering in Si nanowires through high-field hole transport: Impacts of boundary condition and comparison with bulk phonon approximation Insight into phonon scattering in Si nanowires through high-field hole transport: Impacts of boundary condition and comparison with bulk phonon approximation Insight into phonon scattering in Si nanowires through high-field hole transport: Impacts of boundary condition and comparison with bulk phonon approximation Journal of Physics: Conference Series, 864, 1 Journal of Physics: Conference Series, 864, 1 Journal of Physics: Conference Series, 864, 1 2017 公開
Tanaka H, Suda J, Kimoto T. Tanaka H, Suda J, Kimoto T. Tanaka H, Suda J, Kimoto T. Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 2017-September, 277-280 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 2017-September, 277-280 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 2017-September, 277-280 2017 公開
タイトル言語:
講演・口頭発表等
タイトル タイトル(日本語) タイトル(英語) 会議名 会議名(日本語) 会議名(英語) 主催者 主催者(日本語) 主催者(英語) 開催年月日 記述言語 会議種別 公開
Photocurrent induced by Franz-Keldysh effect in 4H-SiC p-n junction diodes under high electric field along <11-20> direction Photocurrent induced by Franz-Keldysh effect in 4H-SiC p-n junction diodes under high electric field along <11-20> direction Photocurrent induced by Franz-Keldysh effect in 4H-SiC p-n junction diodes under high electric field along <11-20> direction International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019 International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019 International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019 2019/09 公開
Monte Carlo Simulation of Hall Mobility in 4H-SiC MOS Inversion Layers Monte Carlo Simulation of Hall Mobility in 4H-SiC MOS Inversion Layers Monte Carlo Simulation of Hall Mobility in 4H-SiC MOS Inversion Layers International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019 International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019 International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019 2019/09 公開
NEGF analysis of classical Hall effect in two-dimensional systems NEGF analysis of classical Hall effect in two-dimensional systems NEGF analysis of classical Hall effect in two-dimensional systems International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures 2019/07/16 公開
NEGF simulation of inter-layer tunneling between semiconductor nanoribbons NEGF simulation of inter-layer tunneling between semiconductor nanoribbons NEGF simulation of inter-layer tunneling between semiconductor nanoribbons International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures 2019/07/15 公開
SiCにおけるショックレー型積層欠陥の拡大/縮小臨界条件のモデリング[招待あり] SiCにおけるショックレー型積層欠陥の拡大/縮小臨界条件のモデリング [招待あり] 応用物理学会 先進パワー半導体分科会 第5回個別討論会 応用物理学会 先進パワー半導体分科会 第5回個別討論会 2019/06/17 公開
4H-SiC MOS反転層における電子輸送のモデリング[招待あり] 4H-SiC MOS反転層における電子輸送のモデリング [招待あり] 電子情報通信学会シリコン材料・デバイス研究会 電子情報通信学会シリコン材料・デバイス研究会 2018/11 公開
Simulation of Electron Mobility in 4H-SiC MOS Interface Focusing on Impacts of Interface States Simulation of Electron Mobility in 4H-SiC MOS Interface Focusing on Impacts of Interface States Simulation of Electron Mobility in 4H-SiC MOS Interface Focusing on Impacts of Interface States 14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures 14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures 14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures 2018/10 公開
Influence of interface states on threshold voltage of SiC short-channel MOSFETs Influence of interface states on threshold voltage of SiC short-channel MOSFETs Influence of interface states on threshold voltage of SiC short-channel MOSFETs 12th European Conference on Silicon Carbide and Related Materials 12th European Conference on Silicon Carbide and Related Materials 12th European Conference on Silicon Carbide and Related Materials 2018/09 公開
価電子帯の異方性を考慮したp型4H-SiCにおけるHall因子・正孔移動度の理論解析[招待あり] 価電子帯の異方性を考慮したp型4H-SiCにおけるHall因子・正孔移動度の理論解析 [招待あり] 先進パワー半導体分科会第4回講演会 先進パワー半導体分科会第4回講演会 2017/11 公開
Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation 2017 International Conference on Simulation of Semiconductor Processes and Devices 2017 International Conference on Simulation of Semiconductor Processes and Devices 2017 International Conference on Simulation of Semiconductor Processes and Devices 2017/09 公開
Theoretical Analysis of Quasi-ballistic Hole Transport in Ge and Si Nanowires Focusing on Energy Relaxation Process Theoretical Analysis of Quasi-ballistic Hole Transport in Ge and Si Nanowires Focusing on Energy Relaxation Process Theoretical Analysis of Quasi-ballistic Hole Transport in Ge and Si Nanowires Focusing on Energy Relaxation Process 2017 IEEE Silicon Nanoelectronics Workshop 2017 IEEE Silicon Nanoelectronics Workshop 2017 IEEE Silicon Nanoelectronics Workshop 2017/06 公開
Theoretical Analysis of Hole Density, Hole Mobility, and Hall Scattering Factor in p-type 4H-SiC Theoretical Analysis of Hole Density, Hole Mobility, and Hall Scattering Factor in p-type 4H-SiC Theoretical Analysis of Hole Density, Hole Mobility, and Hall Scattering Factor in p-type 4H-SiC 11th European Conference on Silicon Carbide and Related Materials 11th European Conference on Silicon Carbide and Related Materials 11th European Conference on Silicon Carbide and Related Materials 2016/09 公開
Insight into phonon scattering in Si nanowires through high-field hole transport: Impacts of boundary condition and comparison with bulk phonon approximation Insight into phonon scattering in Si nanowires through high-field hole transport: Impacts of boundary condition and comparison with bulk phonon approximation Insight into phonon scattering in Si nanowires through high-field hole transport: Impacts of boundary condition and comparison with bulk phonon approximation 33rd International Conference on the Physics of Semiconductors 33rd International Conference on the Physics of Semiconductors 33rd International Conference on the Physics of Semiconductors 2016/08 公開
Theoretical Analysis of High-field Hole Transport in Germanium and Silicon Nanowires Theoretical Analysis of High-field Hole Transport in Germanium and Silicon Nanowires Theoretical Analysis of High-field Hole Transport in Germanium and Silicon Nanowires 2016 IEEE Silicon Nanoelectronics Workshop 2016 IEEE Silicon Nanoelectronics Workshop 2016 IEEE Silicon Nanoelectronics Workshop 2016/06 公開
Phonon-Limited Electron Mobility in Rectangular Cross-Sectional Ge Nanowires[招待あり] Phonon-Limited Electron Mobility in Rectangular Cross-Sectional Ge Nanowires [招待あり] 第15回関西コロキアム電子デバイスワークショップ 第15回関西コロキアム電子デバイスワークショップ 2015/12 公開
Ballistic and Quasi-ballistic Hole Transport Properties in Germanium Nanowire pMOSFETs Based on an Extended “Top of the Barrier” Model Ballistic and Quasi-ballistic Hole Transport Properties in Germanium Nanowire pMOSFETs Based on an Extended “Top of the Barrier” Model Ballistic and Quasi-ballistic Hole Transport Properties in Germanium Nanowire pMOSFETs Based on an Extended “Top of the Barrier” Model 2015 International Conference on Solid State Devices and Materials 2015 International Conference on Solid State Devices and Materials 2015 International Conference on Solid State Devices and Materials 2015/09 公開
Impacts of Orientation and Cross-sectional Shape on Hole Mobility of Si Nanowire MOSFETs Impacts of Orientation and Cross-sectional Shape on Hole Mobility of Si Nanowire MOSFETs Impacts of Orientation and Cross-sectional Shape on Hole Mobility of Si Nanowire MOSFETs 2015 IEEE International Meeting for Future of Electron Devices, Kansai 2015 IEEE International Meeting for Future of Electron Devices, Kansai 2015 IEEE International Meeting for Future of Electron Devices, Kansai 2015/06 公開
Impacts of Surface Roughness Scattering on Hole Mobility in Germanium Nanowires Impacts of Surface Roughness Scattering on Hole Mobility in Germanium Nanowires Impacts of Surface Roughness Scattering on Hole Mobility in Germanium Nanowires 2015 IEEE Silicon Nanoelectronics Workshop 2015 IEEE Silicon Nanoelectronics Workshop 2015 IEEE Silicon Nanoelectronics Workshop 2015/06 公開
Orientation and Size Effects on Phonon-limited Hole Mobility in Rectangular Cross-sectional Germanium Nanowires Orientation and Size Effects on Phonon-limited Hole Mobility in Rectangular Cross-sectional Germanium Nanowires Orientation and Size Effects on Phonon-limited Hole Mobility in Rectangular Cross-sectional Germanium Nanowires 2014 IEEE Silicon Nanoelectronics Workshop 2014 IEEE Silicon Nanoelectronics Workshop 2014 IEEE Silicon Nanoelectronics Workshop 2014/06 公開
Size and Geometric Effects on Conduction Band Structure of GaAs Nanowires Size and Geometric Effects on Conduction Band Structure of GaAs Nanowires Size and Geometric Effects on Conduction Band Structure of GaAs Nanowires 2013 IEEE International Meeting for Future of Electron Devices, Kansai 2013 IEEE International Meeting for Future of Electron Devices, Kansai 2013 IEEE International Meeting for Future of Electron Devices, Kansai 2013/06 公開

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タイトル言語:
外部資金:競争的資金・科学研究費補助金
種別 代表/分担 テーマ(日本語) テーマ(英語) 期間
特別研究員奨励費(DC) 代表 次世代集積回路に向けた半導体ナノワイヤにおけるキャリア輸送現象の研究 2015/04/01〜2018/03/31
特別研究員奨励費(PD) 代表 高性能パワーデバイスに向けたSiC MOS界面におけるキャリア輸送現象の理論研究 2018/04/01〜2019/03/31
研究活動スタート支援 代表 炭化ケイ素MOS界面におけるキャリア輸送に関する理論研究 2019/08/30〜2021/03/31