Masahiro Hara, Mitsuaki Kaneko, Tsunenobu Kimoto |
Masahiro Hara, Mitsuaki Kaneko, Tsunenobu Kimoto |
Masahiro Hara, Mitsuaki Kaneko, Tsunenobu Kimoto |
Nearly Fermi-level-pinning-free interface in metal/heavily-doped SiC Schottky structures |
Nearly Fermi-level-pinning-free interface in metal/heavily-doped SiC Schottky structures |
Nearly Fermi-level-pinning-free interface in metal/heavily-doped SiC Schottky structures |
Japanese Journal of Applied Physics, 60, SB, SBBD14-SBBD14 |
Japanese Journal of Applied Physics, 60, SB, SBBD14-SBBD14 |
Japanese Journal of Applied Physics, 60, SB, SBBD14-SBBD14 |
2021/02/18 |
有 |
|
研究論文(学術雑誌) |
公開 |
Keita Tachiki, Mitsuaki Kaneko, Tsunenobu Kimoto |
Keita Tachiki, Mitsuaki Kaneko, Tsunenobu Kimoto |
Keita Tachiki, Mitsuaki Kaneko, Tsunenobu Kimoto |
Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation |
Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation |
Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation |
Applied Physics Express, 14, 3, 031001-031001 |
Applied Physics Express, 14, 3, 031001-031001 |
Applied Physics Express, 14, 3, 031001-031001 |
2021/01/29 |
有 |
|
研究論文(学術雑誌) |
公開 |
Keita Tachiki, Mitsuaki Kaneko, Takuma Kobayashi, Tsunenobu Kimoto |
Keita Tachiki, Mitsuaki Kaneko, Takuma Kobayashi, Tsunenobu Kimoto |
Keita Tachiki, Mitsuaki Kaneko, Takuma Kobayashi, Tsunenobu Kimoto |
Formation of high-quality SiC(0001)/SiO2 structures by excluding oxidation process with H2 etching before SiO2 deposition and high-temperature N2 annealing |
Formation of high-quality SiC(0001)/SiO2 structures by excluding oxidation process with H2 etching before SiO2 deposition and high-temperature N2 annealing |
Formation of high-quality SiC(0001)/SiO2 structures by excluding oxidation process with H2 etching before SiO2 deposition and high-temperature N2 annealing |
Applied Physics Express, 13, 12, 121002-121002 |
Applied Physics Express, 13, 12, 121002-121002 |
Applied Physics Express, 13, 12, 121002-121002 |
2020/12/01 |
有 |
|
研究論文(学術雑誌) |
公開 |
M. Kaneko, M. Nakajima, Q. Jin, T. Kimoto |
|
M. Kaneko, M. Nakajima, Q. Jin, T. Kimoto |
Experimental Study on Short-Channel Effects in Double-Gate Silicon Carbide JFETs |
Experimental Study on Short-Channel Effects in Double-Gate Silicon Carbide JFETs |
Experimental Study on Short-Channel Effects in Double-Gate Silicon Carbide JFETs |
IEEE Transactions on Electron Devices, 67, 10, 4538-4540 |
, 67, 10, 4538-4540 |
IEEE Transactions on Electron Devices, 67, 10, 4538-4540 |
2020/10 |
有 |
|
研究論文(学術雑誌) |
公開 |
Dionysios Stefanakis, Xilun Chi, Takuya Maeda, Mitsuaki Kaneko, Tsunenobu Kimoto |
Dionysios Stefanakis, Xilun Chi, Takuya Maeda, Mitsuaki Kaneko, Tsunenobu Kimoto |
Dionysios Stefanakis, Xilun Chi, Takuya Maeda, Mitsuaki Kaneko, Tsunenobu Kimoto |
Experimental Determination of Impact Ionization Coefficients Along 〈1120〉 in 4H-SiC |
Experimental Determination of Impact Ionization Coefficients Along 〈1120〉 in 4H-SiC |
Experimental Determination of Impact Ionization Coefficients Along 〈1120〉 in 4H-SiC |
IEEE Transactions on Electron Devices, 67, 9, 3740-3744 |
IEEE Transactions on Electron Devices, 67, 9, 3740-3744 |
IEEE Transactions on Electron Devices, 67, 9, 3740-3744 |
2020/09 |
有 |
|
研究論文(学術雑誌) |
公開 |
M. Kaneko, X. Chi, T. Kimoto |
M. Kaneko, X. Chi, T. Kimoto |
M. Kaneko, X. Chi, T. Kimoto |
Tunneling Current in 4H-SiC p-n Junction Diodes |
Tunneling Current in 4H-SiC p-n Junction Diodes |
Tunneling Current in 4H-SiC p-n Junction Diodes |
IEEE Transactions on Electron Devices, 67, 8, 3329-3334 |
IEEE Transactions on Electron Devices, 67, 8, 3329-3334 |
IEEE Transactions on Electron Devices, 67, 8, 3329-3334 |
2020/08 |
有 |
|
研究論文(学術雑誌) |
公開 |
Mitsuaki Kaneko, Kazuto Hirai, Tsunenobu Kimoto, Jun Suda |
Mitsuaki Kaneko, Kazuto Hirai, Tsunenobu Kimoto, Jun Suda |
Mitsuaki Kaneko, Kazuto Hirai, Tsunenobu Kimoto, Jun Suda |
Multi-cycle RHEED oscillation under nitrogen supply in alternative source supply AlN growth by rf-MBE |
Multi-cycle RHEED oscillation under nitrogen supply in alternative source supply AlN growth by rf-MBE |
Multi-cycle RHEED oscillation under nitrogen supply in alternative source supply AlN growth by rf-MBE |
Applied Physics Express, 13, 2, 025503-025503 |
Applied Physics Express, 13, 2, 025503-025503 |
Applied Physics Express, 13, 2, 025503-025503 |
2020/02/01 |
有 |
英語 |
研究論文(学術雑誌) |
公開 |
M. Nakajima, M. Kaneko, T. Kimoto |
M. Nakajima, M. Kaneko, T. Kimoto |
M. Nakajima, M. Kaneko, T. Kimoto |
Normally-off 400 °c Operation of n- and p-JFETs with a Side-Gate Structure Fabricated by Ion Implantation into a High-Purity Semi-Insulating SiC Substrate |
Normally-off 400 °c Operation of n- and p-JFETs with a Side-Gate Structure Fabricated by Ion Implantation into a High-Purity Semi-Insulating SiC Substrate |
Normally-off 400 °c Operation of n- and p-JFETs with a Side-Gate Structure Fabricated by Ion Implantation into a High-Purity Semi-Insulating SiC Substrate |
IEEE Electron Device Letters, 40, 866-869 |
IEEE Electron Device Letters, 40, 866-869 |
IEEE Electron Device Letters, 40, 866-869 |
2019/06 |
有 |
|
|
公開 |
Mitsuaki Kaneko, Ulrike Grossner, Tsunenobu Kimoto |
Mitsuaki Kaneko, Ulrike Grossner, Tsunenobu Kimoto |
Mitsuaki Kaneko, Ulrike Grossner, Tsunenobu Kimoto |
SIC vertical-channel n-and P-JFETS fully fabricated by ion implantation |
SIC vertical-channel n-and P-JFETS fully fabricated by ion implantation |
SIC vertical-channel n-and P-JFETS fully fabricated by ion implantation |
Materials Science Forum, 963 MSF, 841-844 |
Materials Science Forum, 963 MSF, 841-844 |
Materials Science Forum, 963 MSF, 841-844 |
2019/01 |
有 |
|
|
公開 |
Kanegae Kazutaka, Kaneko Mitsuaki, Kimoto Tsunenobu, Horita Masahiro, Suda Jun |
Kanegae Kazutaka, Kaneko Mitsuaki, Kimoto Tsunenobu, Horita Masahiro, Suda Jun |
Kanegae Kazutaka, Kaneko Mitsuaki, Kimoto Tsunenobu, Horita Masahiro, Suda Jun |
Characterization of carrier concentration and mobility of GaN bulk substrates by Raman scattering and infrared reflectance spectroscopies |
Characterization of carrier concentration and mobility of GaN bulk substrates by Raman scattering and infrared reflectance spectroscopies |
Characterization of carrier concentration and mobility of GaN bulk substrates by Raman scattering and infrared reflectance spectroscopies |
JAPANESE JOURNAL OF APPLIED PHYSICS, 57, 7 |
JAPANESE JOURNAL OF APPLIED PHYSICS, 57, 7 |
JAPANESE JOURNAL OF APPLIED PHYSICS, 57, 7 |
2018/07 |
有 |
|
|
公開 |
M. Kaneko, T. Kimoto |
M. Kaneko, T. Kimoto |
M. Kaneko, T. Kimoto |
High-Temperature Operation of n- and p-Channel JFETs Fabricated by Ion Implantation into a High-Purity Semi-Insulating SiC Substrate |
High-Temperature Operation of n- and p-Channel JFETs Fabricated by Ion Implantation into a High-Purity Semi-Insulating SiC Substrate |
High-Temperature Operation of n- and p-Channel JFETs Fabricated by Ion Implantation into a High-Purity Semi-Insulating SiC Substrate |
IEEE Electron Device Letters, 39, 5, 723-726 |
IEEE Electron Device Letters, 39, 5, 723-726 |
IEEE Electron Device Letters, 39, 5, 723-726 |
2018/05/01 |
有 |
英語 |
研究論文(学術雑誌) |
公開 |
M. Kaneko, S. Ueta, M. Horita, T. Kimoto, J. Suda |
M. Kaneko, S. Ueta, M. Horita, T. Kimoto, J. Suda |
M. Kaneko, S. Ueta, M. Horita, T. Kimoto, J. Suda |
Deep-ultraviolet light emission from 4H-AlN/4H-GaN short-period superlattice grown on 4 H - SiC (11 2 0) |
Deep-ultraviolet light emission from 4H-AlN/4H-GaN short-period superlattice grown on 4 H - SiC (11 2 0) |
Deep-ultraviolet light emission from 4H-AlN/4H-GaN short-period superlattice grown on 4 H - SiC (11 2 0) |
Applied Physics Letters, 112, 1 |
Applied Physics Letters, 112, 1 |
Applied Physics Letters, 112, 1 |
2018/01/01 |
有 |
英語 |
研究論文(学術雑誌) |
公開 |
M. Kaneko, T. Kimoto, J. Suda |
M. Kaneko, T. Kimoto, J. Suda |
M. Kaneko, T. Kimoto, J. Suda |
Phonon frequencies of a highly strained AlN layer coherently grown on 6H-SiC (0001)  |
Phonon frequencies of a highly strained AlN layer coherently grown on 6H-SiC (0001)  |
Phonon frequencies of a highly strained AlN layer coherently grown on 6H-SiC (0001)  |
AIP Advances, 7, 1 |
AIP Advances, 7, 1 |
AIP Advances, 7, 1 |
2017/01/01 |
有 |
英語 |
研究論文(学術雑誌) |
公開 |
Mitsuaki Kaneko, Tsunenobu Kimoto, Jun Suda |
Mitsuaki Kaneko, Tsunenobu Kimoto, Jun Suda |
Mitsuaki Kaneko, Tsunenobu Kimoto, Jun Suda |
Strain control in AlN top layer by inserting an ultrathin GaN interlayer on an AlN template coherently grown on SiC(0001) by PAMBE |
Strain control in AlN top layer by inserting an ultrathin GaN interlayer on an AlN template coherently grown on SiC(0001) by PAMBE |
Strain control in AlN top layer by inserting an ultrathin GaN interlayer on an AlN template coherently grown on SiC(0001) by PAMBE |
Physica Status Solidi (B) Basic Research, 253, 5, 814-818 |
Physica Status Solidi (B) Basic Research, 253, 5, 814-818 |
Physica Status Solidi (B) Basic Research, 253, 5, 814-818 |
2016/05/01 |
有 |
英語 |
研究論文(学術雑誌) |
公開 |
Mitsuaki Kaneko, Tsunenobu Kimoto, Jun Suda |
Mitsuaki Kaneko, Tsunenobu Kimoto, Jun Suda |
Mitsuaki Kaneko, Tsunenobu Kimoto, Jun Suda |
Strong impact of the initial III/V ratio on the crystalline quality of an AlN layer grown by rf-plasma-assisted molecular-beam epitaxy |
Strong impact of the initial III/V ratio on the crystalline quality of an AlN layer grown by rf-plasma-assisted molecular-beam epitaxy |
Strong impact of the initial III/V ratio on the crystalline quality of an AlN layer grown by rf-plasma-assisted molecular-beam epitaxy |
Applied Physics Express, 9, 2 |
Applied Physics Express, 9, 2 |
Applied Physics Express, 9, 2 |
2016/02/01 |
有 |
英語 |
研究論文(学術雑誌) |
公開 |
Mitsuaki Kaneko, Ryosuke Kikuchi, Hironori Okumura, Tsunenobu Kimoto, Jun Suda |
Mitsuaki Kaneko, Ryosuke Kikuchi, Hironori Okumura, Tsunenobu Kimoto, Jun Suda |
Mitsuaki Kaneko, Ryosuke Kikuchi, Hironori Okumura, Tsunenobu Kimoto, Jun Suda |
Coherent growth of AlN/GaN short-period superlattice with average GaN mole fraction of up to 20% on 6H-SiC(0001) substrates by plasma-assisted molecular-beam epitaxy |
Coherent growth of AlN/GaN short-period superlattice with average GaN mole fraction of up to 20% on 6H-SiC(0001) substrates by plasma-assisted molecular-beam epitaxy |
Coherent growth of AlN/GaN short-period superlattice with average GaN mole fraction of up to 20% on 6H-SiC(0001) substrates by plasma-assisted molecular-beam epitaxy |
Japanese Journal of Applied Physics, 52, 8 |
Japanese Journal of Applied Physics, 52, 8 |
Japanese Journal of Applied Physics, 52, 8 |
2013/08 |
有 |
英語 |
研究論文(学術雑誌) |
公開 |
Mitsuaki Kaneko, Hironori Okumura, Ryota Ishii, Mitsuru Funato, Yoichi Kawakami, Tsunenobu Kimoto, Jun Suda |
Mitsuaki Kaneko, Hironori Okumura, Ryota Ishii, Mitsuru Funato, Yoichi Kawakami, Tsunenobu Kimoto, Jun Suda |
Mitsuaki Kaneko, Hironori Okumura, Ryota Ishii, Mitsuru Funato, Yoichi Kawakami, Tsunenobu Kimoto, Jun Suda |
Optical properties of highly strained AlN coherently grown on 6H-SiC(0001) |
Optical properties of highly strained AlN coherently grown on 6H-SiC(0001) |
Optical properties of highly strained AlN coherently grown on 6H-SiC(0001) |
Applied Physics Express, 6, 6 |
Applied Physics Express, 6, 6 |
Applied Physics Express, 6, 6 |
2013/06 |
有 |
英語 |
研究論文(学術雑誌) |
公開 |
Ryosuke Kikuchi, Hironori Okumura, Mitsuaki Kaneko, Tsunenobu Kimoto, Jun Suda |
Ryosuke Kikuchi, Hironori Okumura, Mitsuaki Kaneko, Tsunenobu Kimoto, Jun Suda |
Ryosuke Kikuchi, Hironori Okumura, Mitsuaki Kaneko, Tsunenobu Kimoto, Jun Suda |
AIN/GaN short-period superlattice coherently grown on 6H-SiC(0001) substrates by molecular beam epitaxy |
AIN/GaN short-period superlattice coherently grown on 6H-SiC(0001) substrates by molecular beam epitaxy |
AIN/GaN short-period superlattice coherently grown on 6H-SiC(0001) substrates by molecular beam epitaxy |
Applied Physics Express, 5, 5 |
Applied Physics Express, 5, 5 |
Applied Physics Express, 5, 5 |
2012/05 |
有 |
英語 |
研究論文(学術雑誌) |
公開 |