奥田 貴史

最終更新日時: 2019/06/17 14:47:08

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氏名(漢字/フリガナ/アルファベット表記)
奥田 貴史/オクダ タカフミ/Okuda, Takafumi
所属部署・職名(部局/所属/講座等/職名)
工学研究科/電気工学専攻先端電気システム論講座/助教
学部兼担
部局 所属 講座等 職名
工学部
所属学会(国内)
学会名(日本語) 学会名(英語)
応用物理学会 The Japan Society of Applied Physics
電気学会 The Institute of Electrical Engineering of Japan
所属学会(海外)
学会名(英語) 国名
The Institute of Electrical and Electronics Engineers, IEEE US
取得学位
学位名(日本語) 学位名(英語) 大学(日本語) 大学(英語) 取得区分
修士(工学) 京都大学
博士(工学) 京都大学
出身大学院・研究科等
大学名(日本語) 大学名(英語) 研究科名(日本語) 研究科名(英語) 専攻名(日本語) 専攻名(英語) 修了区分
京都大学 大学院工学研究科修士課程電子工学専攻 修了
京都大学 大学院工学研究科博士後期課程電子工学専攻 修了
出身学校・専攻等
大学名(日本語) 大学名(英語) 学部名(日本語) 学部名(英語) 学科名(日本語) 学科名(英語) 卒業区分
京都大学 工学部電気電子工学科 卒業
職歴
期間 組織名(日本語) 組織名(英語) 職名(日本語) 職名(英語)
2013/04/01〜2015/09/31 日本学術振興会 特別研究員(DC1)
2015/10/01〜2016/03/31 日本学術振興会 特別研究員(PD)
2016/04/01〜2016/09/31 京都大学 大学院工学研究科 特定研究員
2016/10/01〜 京都大学 大学院工学研究科 助教
個人ホームページ
URL
http://www-lab23.kuee.kyoto-u.ac.jp/ja/index.php?Takafumi%20Okuda
researchmap URL
https://researchmap.jp/7000018352
論文
著者 著者(日本語) 著者(英語) タイトル タイトル(日本語) タイトル(英語) 書誌情報等 書誌情報等(日本語) 書誌情報等(英語) 出版年月 査読の有無 記述言語 掲載種別 公開
Ryosuke Maeda, Takafumi Okuda, Takashi Hikihara Ryosuke Maeda, Takafumi Okuda, Takashi Hikihara Ryosuke Maeda, Takafumi Okuda, Takashi Hikihara Analysis of dynamic characteristics of SiC Schottky barrier diodes at high switching frequency based on junction capacitance Analysis of dynamic characteristics of SiC Schottky barrier diodes at high switching frequency based on junction capacitance Analysis of dynamic characteristics of SiC Schottky barrier diodes at high switching frequency based on junction capacitance JAPANESE JOURNAL OF APPLIED PHYSICS, 57, 4 JAPANESE JOURNAL OF APPLIED PHYSICS, 57, 4 JAPANESE JOURNAL OF APPLIED PHYSICS, 57, 4 2018/04 英語 研究論文(学術雑誌) 公開
奥田 貴史, 引原 隆士 奥田 貴史, 引原 隆士 大電力高速パルス生成器によるオシロスコープのスキュー補正 大電力高速パルス生成器によるオシロスコープのスキュー補正 電気学会論文誌. C, 138, 1 電気学会論文誌. C, 138, 1 , 138, 1 2018/01 日本語 研究論文(学術雑誌) 公開
T. Kimoto, H. Niwa, T. Okuda, E. Saito, Y. Zhao, S. Asada, and J. Suda T. Kimoto, H. Niwa, T. Okuda, E. Saito, Y. Zhao, S. Asada, and J. Suda T. Kimoto, H. Niwa, T. Okuda, E. Saito, Y. Zhao, S. Asada, and J. Suda Carrier Lifetime and Breakdown Phenomena in SiC Power Device Material Carrier Lifetime and Breakdown Phenomena in SiC Power Device Material Carrier Lifetime and Breakdown Phenomena in SiC Power Device Material Journal of Physics D: Applied Physics, 51, 04FR04 Journal of Physics D: Applied Physics, 51, 04FR04 Journal of Physics D: Applied Physics, 51, 04FR04 2018 英語 研究論文(学術雑誌) 公開
Manuel Sanchez, Takafumi Okuda, and Takashi Hikihara Manuel Sanchez, Takafumi Okuda, and Takashi Hikihara Manuel Sanchez, Takafumi Okuda, and Takashi Hikihara Stabilization of Mode in Imbalanced Operation of Matrix Converter by Time-Delayed Feedback Control Stabilization of Mode in Imbalanced Operation of Matrix Converter by Time-Delayed Feedback Control Stabilization of Mode in Imbalanced Operation of Matrix Converter by Time-Delayed Feedback Control International Journal of Circuit Theory and Applications, 46, 2420-2433 International Journal of Circuit Theory and Applications, 46, 2420-2433 International Journal of Circuit Theory and Applications, 46, 2420-2433 2018 英語 研究論文(学術雑誌) 公開
T. Umeda, G.-W. Kim, T. Okuda, M. Sometani, T. Kimoto, and S. Harada T. Umeda, G.-W. Kim, T. Okuda, M. Sometani, T. Kimoto, and S. Harada T. Umeda, G.-W. Kim, T. Okuda, M. Sometani, T. Kimoto, and S. Harada Interface Carbon Defects at 4H-SiC(0001)/SiO2 Interfaces Studied by Electron-Spin-Resonance Spectroscopy Interface Carbon Defects at 4H-SiC(0001)/SiO2 Interfaces Studied by Electron-Spin-Resonance Spectroscopy Interface Carbon Defects at 4H-SiC(0001)/SiO2 Interfaces Studied by Electron-Spin-Resonance Spectroscopy Applied Physics Letters, 113, 061605 Applied Physics Letters, 113, 061605 Applied Physics Letters, 113, 061605 2018 英語 研究論文(学術雑誌) 公開
T. Kobayashi, Y. Matsushita, T. Okuda, T. Kimoto, and A. Oshiyama T. Kobayashi, Y. Matsushita, T. Okuda, T. Kimoto, and A. Oshiyama T. Kobayashi, Y. Matsushita, T. Okuda, T. Kimoto, and A. Oshiyama Microscopic Mechanism of Carbon Annihilation upon SiC Oxidation due to Phosphorus Treatment: Density Functional Calculations Combined with Ion Mass Spectrometry Microscopic Mechanism of Carbon Annihilation upon SiC Oxidation due to Phosphorus Treatment: Density Functional Calculations Combined with Ion Mass Spectrometry Microscopic Mechanism of Carbon Annihilation upon SiC Oxidation due to Phosphorus Treatment: Density Functional Calculations Combined with Ion Mass Spectrometry Applied Physics Express, 11, 121301 Applied Physics Express, 11, 121301 Applied Physics Express, 11, 121301 2018 英語 研究論文(学術雑誌) 公開
Takuma Kobayashi, Seiya Nakazawa, Takafumi Okuda, Jun Suda, Tsunenobu Kimoto Takuma Kobayashi, Seiya Nakazawa, Takafumi Okuda, Jun Suda, Tsunenobu Kimoto Takuma Kobayashi, Seiya Nakazawa, Takafumi Okuda, Jun Suda, Tsunenobu Kimoto Interface properties of NO-annealed 4H-SiC (0001), (11(2)over-bar0), and (1(1)over-bar00) MOS structures with heavily doped p-bodies Interface properties of NO-annealed 4H-SiC (0001), (11(2)over-bar0), and (1(1)over-bar00) MOS structures with heavily doped p-bodies Interface properties of NO-annealed 4H-SiC (0001), (11(2)over-bar0), and (1(1)over-bar00) MOS structures with heavily doped p-bodies JOURNAL OF APPLIED PHYSICS, 121, 14 JOURNAL OF APPLIED PHYSICS, 121, 14 JOURNAL OF APPLIED PHYSICS, 121, 14 2017/04 英語 研究論文(学術雑誌) 公開
Yuhei Sadanda, Takafumi Okuda, Takashi Hikihara Yuhei Sadanda, Takafumi Okuda, Takashi Hikihara Yuhei Sadanda, Takafumi Okuda, Takashi Hikihara Direct Drive of a Buck Converter by Delta-Sigma Modulation at 13.56-MHz Sampling Direct Drive of a Buck Converter by Delta-Sigma Modulation at 13.56-MHz Sampling Direct Drive of a Buck Converter by Delta-Sigma Modulation at 13.56-MHz Sampling 2017 IEEE 18TH WORKSHOP ON CONTROL AND MODELING FOR POWER ELECTRONICS (COMPEL) 2017 IEEE 18TH WORKSHOP ON CONTROL AND MODELING FOR POWER ELECTRONICS (COMPEL) 2017 IEEE 18TH WORKSHOP ON CONTROL AND MODELING FOR POWER ELECTRONICS (COMPEL) 2017 英語 研究論文(学術雑誌) 公開
Takafumi Okuda, Yohei Nakamura, Takashi Hikihara, Michihiro Shintani, Takashi Sato Takafumi Okuda, Yohei Nakamura, Takashi Hikihara, Michihiro Shintani, Takashi Sato Takafumi Okuda, Yohei Nakamura, Takashi Hikihara, Michihiro Shintani, Takashi Sato Analysis of Transient Behavior of SiC Power MOSFETs Based on Surface Potential Model and Its Application to Boost Converter Analysis of Transient Behavior of SiC Power MOSFETs Based on Surface Potential Model and Its Application to Boost Converter Analysis of Transient Behavior of SiC Power MOSFETs Based on Surface Potential Model and Its Application to Boost Converter 2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA) 2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA) 2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA) 2016 英語 研究論文(学術雑誌) 公開
Takafumi Okuda, Takuma Kobayashi, Tsunenobu Kimoto, Jun Suda Takafumi Okuda, Takuma Kobayashi, Tsunenobu Kimoto, Jun Suda Takafumi Okuda, Takuma Kobayashi, Tsunenobu Kimoto, Jun Suda Impact of Annealing Temperature on Surface Passivation of SiC Epitaxial Layers with Deposited SiO2 Followed by POCl3 Annealing Impact of Annealing Temperature on Surface Passivation of SiC Epitaxial Layers with Deposited SiO2 Followed by POCl3 Annealing Impact of Annealing Temperature on Surface Passivation of SiC Epitaxial Layers with Deposited SiO2 Followed by POCl3 Annealing 2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA) 2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA) 2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA) 2016 英語 研究論文(学術雑誌) 公開
タイトル言語:
講演・口頭発表等
タイトル タイトル(日本語) タイトル(英語) 会議名 会議名(日本語) 会議名(英語) 主催者 主催者(日本語) 主催者(英語) 開催年月日 記述言語 会議種別 公開
Investigations on Electrical Characteristics of 1-kV pnp SiC BJTs Compared with npn SiC BJT Investigations on Electrical Characteristics of 1-kV pnp SiC BJTs Compared with npn SiC BJT Investigations on Electrical Characteristics of 1-kV pnp SiC BJTs Compared with npn SiC BJT 2017 International Conference on Solid State Devices and Materials 2017 International Conference on Solid State Devices and Materials 2017 International Conference on Solid State Devices and Materials 2017/09/22 英語 口頭発表(一般) 公開
Impact of Annealing Temperature on Surface Passivation of SiC Epitaxial Layers with Deposited SiO2 Followed by POCl3 Annealing Impact of Annealing Temperature on Surface Passivation of SiC Epitaxial Layers with Deposited SiO2 Followed by POCl3 Annealing Impact of Annealing Temperature on Surface Passivation of SiC Epitaxial Layers with Deposited SiO2 Followed by POCl3 Annealing 4th IEEE Workshop on Wide Bandgap Power Devices and Applications 4th IEEE Workshop on Wide Bandgap Power Devices and Applications 4th IEEE Workshop on Wide Bandgap Power Devices and Applications 2016/11/09 英語 口頭発表(一般) 公開
Analysis of Transient Behavior of SiC Power MOSFETs Based on Surface Potential Model and Its Application to Boost Converter Analysis of Transient Behavior of SiC Power MOSFETs Based on Surface Potential Model and Its Application to Boost Converter Analysis of Transient Behavior of SiC Power MOSFETs Based on Surface Potential Model and Its Application to Boost Converter 4th IEEE Workshop on Wide Bandgap Power Devices and Applications 4th IEEE Workshop on Wide Bandgap Power Devices and Applications 4th IEEE Workshop on Wide Bandgap Power Devices and Applications 2016/11/08 英語 口頭発表(一般) 公開
Surface Passivation on p-Type 4H-SiC Epitaxial Layers by Deposited SiO2 with POCl3 Annealing Surface Passivation on p-Type 4H-SiC Epitaxial Layers by Deposited SiO2 with POCl3 Annealing Surface Passivation on p-Type 4H-SiC Epitaxial Layers by Deposited SiO2 with POCl3 Annealing International Conference on Silicon Carbide and Related Materials International Conference on Silicon Carbide and Related Materials International Conference on Silicon Carbide and Related Materials 2015/10/07 英語 口頭発表(一般) 公開
Enhancement of Carrier Lifetimes in p-Type 4H-SiC Epitaxial Layers Enhancement of Carrier Lifetimes in p-Type 4H-SiC Epitaxial Layers Enhancement of Carrier Lifetimes in p-Type 4H-SiC Epitaxial Layers International Conference on Silicon Carbide and Related Materials International Conference on Silicon Carbide and Related Materials International Conference on Silicon Carbide and Related Materials 2015/10/06 英語 口頭発表(一般) 公開
Oxidation-Induced Majority and Minority Carrier Traps in n- and p-Type 4H-SiC Oxidation-Induced Majority and Minority Carrier Traps in n- and p-Type 4H-SiC Oxidation-Induced Majority and Minority Carrier Traps in n- and p-Type 4H-SiC International Conference on Silicon Carbide and Related Materials International Conference on Silicon Carbide and Related Materials International Conference on Silicon Carbide and Related Materials 2015/10/06 英語 口頭発表(一般) 公開
Improvement of Carrier Lifetimes in Lightly-Doped p-Type 4H-SiC Epitaxial Layers by Combination of Thermal Oxidation and Hydrogen Passivation[招待あり] Improvement of Carrier Lifetimes in Lightly-Doped p-Type 4H-SiC Epitaxial Layers by Combination of Thermal Oxidation and Hydrogen Passivation [招待あり] Improvement of Carrier Lifetimes in Lightly-Doped p-Type 4H-SiC Epitaxial Layers by Combination of Thermal Oxidation and Hydrogen Passivation [招待あり] European Conference on Silicon Carbide and Related Materials European Conference on Silicon Carbide and Related Materials European Conference on Silicon Carbide and Related Materials 2015/09/23 英語 口頭発表(招待・特別) 公開
Carrier Lifetime Improvement in Al-Doped p-Type 4H-SiC Epitaxial Layers by Hydrogen Passivation Carrier Lifetime Improvement in Al-Doped p-Type 4H-SiC Epitaxial Layers by Hydrogen Passivation Carrier Lifetime Improvement in Al-Doped p-Type 4H-SiC Epitaxial Layers by Hydrogen Passivation International Conference on Silicon Carbide and Related Materials International Conference on Silicon Carbide and Related Materials International Conference on Silicon Carbide and Related Materials 2013/09/30 英語 口頭発表(一般) 公開
Electrical Characteristics of 21-kV SiC BJTs with Space-Modulated Junction Termination Extension Electrical Characteristics of 21-kV SiC BJTs with Space-Modulated Junction Termination Extension Electrical Characteristics of 21-kV SiC BJTs with Space-Modulated Junction Termination Extension International Conference on Solid State Devices and Materials International Conference on Solid State Devices and Materials International Conference on Solid State Devices and Materials 2013/09/25 英語 口頭発表(一般) 公開
Persistent Photoconductivity in p-Type 4H-SiC Bulk Crystals Persistent Photoconductivity in p-Type 4H-SiC Bulk Crystals Persistent Photoconductivity in p-Type 4H-SiC Bulk Crystals European Conference on Silicon Carbide and Related Materials European Conference on Silicon Carbide and Related Materials European Conference on Silicon Carbide and Related Materials 2012/09/02 英語 口頭発表(一般) 公開
Current Transport Characteristics of Quasi-AlxGa1-xN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities Current Transport Characteristics of Quasi-AlxGa1-xN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities Current Transport Characteristics of Quasi-AlxGa1-xN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities International Conference on Solid State Devices and Materials International Conference on Solid State Devices and Materials International Conference on Solid State Devices and Materials 2011/09/29 英語 ポスター発表 公開

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タイトル言語:
学術賞等
賞の名称(日本語) 賞の名称(英語) 授与組織名(日本語) 授与組織名(英語) 年月
電子情報通信学会電子デバイス研究会 論文発表奨励賞 電子情報通信学会 2011/11/25
秋季第59回応用物理学会関係連合講演会 講演奨励賞 応用物理学会 2012/09/11
第32回電子材料シンポジウム EMS賞 電子材料シンポジウム 2013/07/12
応用物理学会 論文奨励賞 応用物理学会 2014/09/16
船井研究奨励賞 船井情報科学振興財団 2017/04/22
エヌエフ基金 研究開発奨励賞 優秀賞 一般財団法人エヌエフ基金 2018/11/16
外部資金:競争的資金・科学研究費補助金
種別 代表/分担 テーマ(日本語) テーマ(英語) 期間
特別研究員奨励費 代表 点欠陥・界面準位の低減による超高性能炭化珪素バイポーラトランジスタの実現 2013/04/01〜2016/03/31
研究活動スタート支援 代表 炭化珪素バイポーラトランジスタのデバイス特性モデル化と高周波電力変換回路の製作 2016/04/01〜2018/03/31
若手研究 代表 炭化珪素デバイスの高速スイッチング特性に注目したMHz級高周波電力変換器 (平成30年度分) 2018/04/01〜2019/03/31
担当科目
講義名(日本語) 講義名(英語) 開講期 学部/研究科 年度
電気電子工学実習 Advanced Practice of Electrical and Electronic Engineering 後期 工学部 2017/04〜2018/03
電気電子工学実習 Advanced Practice of Electrical and Electronic Engineering 後期 工学部 2018/04〜2019/03
電気電子工学実習 Advanced Practice of Electrical and Electronic Engineering 後期 工学部 2019/04〜2020/03