川上 養一

最終更新日時: 2015/11/27 14:37:54

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氏名(漢字/フリガナ/アルファベット表記)
川上 養一/カワカミ ヨウイチ/Kawakami, Youichi
所属部署・職名(部局/所属/講座等/職名)
工学研究科/電子工学専攻量子機能工学講座/教授
学部兼担
部局 所属 講座等 職名
工学部
連絡先住所
種別 住所(日本語) 住所(英語)
職場 〒615-8510 京都府京都市西京区京都大学桂 Kyoto University, Katsura Campus, Nishikyo-ku, Kyoto 615-8510, Japan
連絡先電話番号
種別 番号
職場 075-383-2310
所属学会(国内)
学会名(日本語) 学会名(英語)
応用物理学会 The Japan Society of Applied Physics
レーザー学会 The Laser Society of Japan
電子情報通信学会 The Institute of Electronics, Information and. Communication Engineers
電気学会 The Institute of Electrical Engineers of Japan
日本真空学会 The Vacuum Society of Japan
照明学会 The Illuminating Engineering Institute of Japan
取得学位
学位名(日本語) 学位名(英語) 大学(日本語) 大学(英語) 取得区分
工学修士 大阪大学
工学博士 大阪大学
出身大学院・研究科等
大学名(日本語) 大学名(英語) 研究科名(日本語) 研究科名(英語) 専攻名(日本語) 専攻名(英語) 修了区分
大阪大学 大学院工学研究科博士前期課程電気工学専攻 修了
大阪大学 大学院工学研究科博士後期課程電気工学専攻 修了
出身学校・専攻等
大学名(日本語) 大学名(英語) 学部名(日本語) 学部名(英語) 学科名(日本語) 学科名(英語) 卒業区分
大阪大学 工学部電気工学科 卒業
出身高等学校
高等学校名 ふりがな
愛媛県立川之江高等学校 えひめけんりつかわのえこうとうがっこう
職歴
期間 組織名(日本語) 組織名(英語) 職名(日本語) 職名(英語)
1989/04/〜1997/03/ 京都大学工学部 Kyoto University, Faculty of Engineering 助手 Research Associate
1991/09/〜1992/10/ 英国ヘリオット・ワット大学 物理学教室 Heriot-Watt University 客員研究員 Visiting Research Scholar
1997/04/〜2007/03/ 京都大学工学研究科 Graduate School of Kyoto University 助教授 Associate Professor
2007/04/〜 京都大学工学研究科 Graduate School of Kyoto University 教授 Professor
researchmap URL
https://researchmap.jp/read0012715
研究テーマ
(日本語)
ワイドバンドギャップ半導体の光物性解明と新光機能性探索
(英語)
Research on fundamental optical properties and new optical functionalities in wide bandgap semiconductors
研究概要
(日本語)
川上研究室では,光と物質との相互作用に基づく新物性の発現と解明に取り組んでいます。このことによって,新しい光デバイスや光応用への展開を推進しています。具体的には,以下のようなテーマが,挙げられます。  (1) ナノ空間での光ダイナミクスを測定するための新手法の開発  (2) 上記手法によるバイオセンシングや局在系光物性の解明  (3) ナノ構造制御によって任意の色,任意の大きさ,効率100%で発光する材料の開発 (3)は,発光スペクトルの合成(シンセサイズ)による究極のテイラーメイド固体光源の開発に繋がるものですが,(1),(2)とも相互にリンクしています。基礎光物性を材料開発にポジティブにフィードバックすることによって研究を推進しています。光材料物性の応用の一例として,私たちは,バイオ医療応用では次のような展開が期待できるのではないかと思い描いています。近未来には「ミクロの決死圏」に代表される医療用マイクロマシンが私たちの体内に入り込んで病気を診断したり治療したりする時代が訪れるでしょう。その際には,微小な高品位固体照明と固体撮像デバイスが必ず搭載され,微妙な色合いの差を際立たせるための照明スペクトルのシンセサイズが必要とされるはずです。また,病変部(究極的には細胞レベル)にのみ選択的に取り込まれる蛍光体と固体照明との組み合わせて微小ガン組織の診断・治療を行うなど種々の可能性が期待できるでしょう。固体照明は,自動車のヘッドライトなどの一般照明はもとより,マイクロサイズあるいはナノサイズの光源としての可能性を秘めており,それを支える基礎光物性と材料開発,そしてバイオ・医療応用などの研究に日夜取り組んでいます。
(英語)
Elucidation of localized optoelectronic properties by advanced photo-sensing technique
研究分野(キーワード)
キーワード(日本語) キーワード(英語)
ワイドバンドギャップ半導体 wide bandgap semiconductors
局在光物性 localized optoelectronic properties
ナノ構造 nano structures
発光制御 control of radiative recombination processes
近接場光学 near-field optics
論文
著者 著者(日本語) 著者(英語) タイトル タイトル(日本語) タイトル(英語) 書誌情報等 書誌情報等(日本語) 書誌情報等(英語) 出版年月 査読の有無 記述言語 掲載種別 公開
川上 養一,金田昭男,船戸 充 川上 養一,金田昭男,船戸 充 KAWAKAMI Yoichi 2探針近接場分光技術の開発 2探針近接場分光技術の開発 Development of Dual-Probe Scanning Near-Field Optical Microscopy レーザー学会誌, 43, 5, 286-291 レーザー学会誌, 43, 5, 286-291 The review of laser engineering, 43, 5, 286-291 2015/05 日本語 公開
TATEISHI Kazutaka, FUNATO Mitsuru, KAWAKAMI Yoichi, OKAMOTO Koichi, TAMADA Kaoru TATEISHI Kazutaka, FUNATO Mitsuru, KAWAKAMI Yoichi, OKAMOTO Koichi, TAMADA Kaoru TATEISHI KAZUTAKA, FUNATO MITSURU, KAWAKAMI YOICHI, OKAMOTO KOICHI, TAMADA KAORU Highly enhanced green emission from InGaN quantum wells due to surface plasmon resonance on aluminum films Highly enhanced green emission from InGaN quantum wells due to surface plasmon resonance on aluminum films Highly enhanced green emission from InGaN quantum wells due to surface plasmon resonance on aluminum films Appl Phys Lett, 106, 12, 121112-121112-5 Appl Phys Lett, 106, 12, 121112-121112-5 Appl Phys Lett, 106, 12, 121112-121112-5 2015/03/23 英語 公開
IWATA Yoshiya, OTO Takao, GACHET David, BANAL Ryan G., FUNATO Mitsuru, KAWAKAMI Yoichi IWATA Yoshiya, OTO Takao, GACHET David, BANAL Ryan G., FUNATO Mitsuru, KAWAKAMI Yoichi IWATA YOSHIYA, OTO TAKAO, GACHET DAVID, BANAL RYAN G., FUNATO MITSURU, KAWAKAMI YOICHI Co-existence of a few and sub micron inhomogeneities in Al-rich AlGaN/AlN quantum wells Co-existence of a few and sub micron inhomogeneities in Al-rich AlGaN/AlN quantum wells Co-existence of a few and sub micron inhomogeneities in Al-rich AlGaN/AlN quantum wells J Appl Phys, 117, 11, 115702-115702-7 J Appl Phys, 117, 11, 115702-115702-7 J Appl Phys, 117, 11, 115702-115702-7 2015/03/21 英語 公開
KAWAKAMI Yoichi, INOUE Kohei, KANETA Akio, OKAMOTO Koichi, FUNATO Mitsuru KAWAKAMI Yoichi, INOUE Kohei, KANETA Akio, OKAMOTO Koichi, FUNATO Mitsuru KAWAKAMI YOICHI, INOUE KOHEI, KANETA AKIO, OKAMOTO KOICHI, FUNATO MITSURU Quantification of the internal quantum efficiency in GaN via analysis of the heat generated by non-radiative recombination processes Quantification of the internal quantum efficiency in GaN via analysis of the heat generated by non-radiative recombination processes Quantification of the internal quantum efficiency in GaN via analysis of the heat generated by non-radiative recombination processes J Appl Phys, 117, 10, 105702-105702-7 J Appl Phys, 117, 10, 105702-105702-7 J Appl Phys, 117, 10, 105702-105702-7 2015/03 英語 公開
Mitsuru Funato, Yoichi Kawakami Mitsuru Funato, Yoichi Kawakami Mitsuru Funato, Yoichi Kawakami Semi/non-polar nitride quantum wells for high-efficient light emitters Semi/non-polar nitride quantum wells for high-efficient light emitters Semi/non-polar nitride quantum wells for high-efficient light emitters Proceedings of SPIE Photonics West 2015, 9363, pp.93631T/1-6 Proceedings of SPIE Photonics West 2015, 9363, pp.93631T/1-6 Proceedings of SPIE Photonics West 2015, 9363, pp.93631T/1-6 2015/03 英語 研究論文(国際会議プロシーディングス) 公開
NISHINAKA Junichi, FUNATO Mitsuru, KAWAKAMI Yoichi NISHINAKA Junichi, FUNATO Mitsuru, KAWAKAMI Yoichi NISHINAKA JUNICHI, FUNATO MITSURU, KAWAKAMI YOICHI Markedly distinct growth characteristics of semipolar (1122) and (1122) InGaN epitaxial layers Markedly distinct growth characteristics of semipolar (1122) and (1122) InGaN epitaxial layers Markedly distinct growth characteristics of semipolar (1122) and (1122) InGaN epitaxial layers Appl Phys Lett, 106, 8, 082105-082105-4 Appl Phys Lett, 106, 8, 082105-082105-4 Appl Phys Lett, 106, 8, 082105-082105-4 2015/02/23 英語 公開
IWATA Yoshiya, BANAL Ryan G., ICHIKAWA Shuhei, FUNATO Mitsuru, KAWAKAMI Yoichi IWATA Yoshiya, BANAL Ryan G., ICHIKAWA Shuhei, FUNATO Mitsuru, KAWAKAMI Yoichi IWATA YOSHIYA, BANAL RYAN G., ICHIKAWA SHUHEI, FUNATO MITSURU, KAWAKAMI YOICHI Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy J Appl Phys, 117, 7, 075701-075701-9 J Appl Phys, 117, 7, 075701-075701-9 J Appl Phys, 117, 7, 075701-075701-9 2015/02/21 英語 公開
Yoshiya Iwata, Ryan G. Banal, Shuhei Ichikawa, Mitsuru Funato, Yoichi Kawakami Yoshiya Iwata, Ryan G. Banal, Shuhei Ichikawa, Mitsuru Funato, Yoichi Kawakami Yoshiya Iwata, Ryan G. Banal, Shuhei Ichikawa, Mitsuru Funato, Yoichi Kawakami Emission mechanisms in al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy Emission mechanisms in al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy Emission mechanisms in al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy Journal of Applied Physics, 117 Journal of Applied Physics, 117 Journal of Applied Physics, 117 2015/01/01 公開
Takuya Ozaki, Mitsuru Funato, Yoichi Kawakami Takuya Ozaki, Mitsuru Funato, Yoichi Kawakami Takuya Ozaki, Mitsuru Funato, Yoichi Kawakami InGaN-based visible light-emitting diodes on ScAlMgO<inf>4</inf>(0001) substrates InGaN-based visible light-emitting diodes on ScAlMgO<inf>4</inf>(0001) substrates InGaN-based visible light-emitting diodes on ScAlMgO<inf>4</inf>(0001) substrates Applied Physics Express, 8 Applied Physics Express, 8 Applied Physics Express, 8 2015/01/01 公開
OZAKI Takuya, TAKAGI Yoshinori, NISHINAKA Junichi, FUNATO Mitsuru, KAWAKAMI Yoichi OZAKI Takuya, TAKAGI Yoshinori, NISHINAKA Junichi, FUNATO Mitsuru, KAWAKAMI Yoichi OZAKI TAKUYA, TAKAGI YOSHINORI, NISHINAKA JUNICHI, FUNATO MITSURU, KAWAKAMI YOICHI Metalorganic vapor phase epitaxy of GaN and lattice-matched InGaN on ScAlMgO4(0001) substrates Metalorganic vapor phase epitaxy of GaN and lattice-matched InGaN on ScAlMgO4(0001) substrates Metalorganic vapor phase epitaxy of GaN and lattice-matched InGaN on ScAlMgO4(0001) substrates Appl Phys Express, 7, 9, 091001.1-091001.4 Appl Phys Express, 7, 9, 091001.1-091001.4 Appl Phys Express, 7, 9, 091001.1-091001.4 2014/09 英語 公開
ISHII Ryota, FUNATO Mitsuru, KAWAKAMI Yoichi ISHII Ryota, FUNATO Mitsuru, KAWAKAMI Yoichi ISHII RYOTA, FUNATO MITSURU, KAWAKAMI YOICHI Effects of strong electron-hole exchange and exciton-phonon interactions on the exciton binding energy of aluminum nitride Effects of strong electron-hole exchange and exciton-phonon interactions on the exciton binding energy of aluminum nitride Effects of strong electron-hole exchange and exciton-phonon interactions on the exciton binding energy of aluminum nitride Jpn J Appl Phys, 53, 9, 091001.1-091001.5 Jpn J Appl Phys, 53, 9, 091001.1-091001.5 Jpn J Appl Phys, 53, 9, 091001.1-091001.5 2014/09 英語 公開
OTO Takao, BANAL Ryan G., FUNATO Mitsuru, KAWAKAMI Yoichi OTO Takao, BANAL Ryan G., FUNATO Mitsuru, KAWAKAMI Yoichi OTO TAKAO, BANAL RYAN G., FUNATO MITSURU, KAWAKAMI YOICHI Optical gain characteristics in Al-rich AlGaN/AlN quantum wells Optical gain characteristics in Al-rich AlGaN/AlN quantum wells Optical gain characteristics in Al-rich AlGaN/AlN quantum wells Appl Phys Lett, 104, 18, 181102-181102-4 Appl Phys Lett, 104, 18, 181102-181102-4 Appl Phys Lett, 104, 18, 181102-181102-4 2014/05/05 英語 公開
FUNATO Mitsuru, HAYASHI Yuki, KAWAKAMI Yoichi FUNATO Mitsuru, HAYASHI Yuki, KAWAKAMI Yoichi FUNATO MITSURU, HAYASHI YUKI, KAWAKAMI YOICHI Bistable nanofacet structures on vicinal AlN(0001) surfaces Bistable nanofacet structures on vicinal AlN(0001) surfaces Bistable nanofacet structures on vicinal AlN(0001) surfaces J Appl Phys, 115, 10, 103518-103518-5 J Appl Phys, 115, 10, 103518-103518-5 J Appl Phys, 115, 10, 103518-103518-5 2014/03/14 英語 公開
Ryota Ishii, Mitsuru Funato, Yoichi Kawakami Ryota Ishii, Mitsuru Funato, Yoichi Kawakami Ryota Ishii, Mitsuru Funato, Yoichi Kawakami Effects of strong electron-hole exchange and exciton-phonon interactions on the exciton binding energy of aluminum nitride Effects of strong electron-hole exchange and exciton-phonon interactions on the exciton binding energy of aluminum nitride Effects of strong electron-hole exchange and exciton-phonon interactions on the exciton binding energy of aluminum nitride Japanese Journal of Applied Physics, 53 Japanese Journal of Applied Physics, 53 Japanese Journal of Applied Physics, 53 2014/01/01 公開
Takuya Ozaki, Yoshinori Takagi, Junichi Nishinaka, Mitsuru Funato, Yoichi Kawakami Takuya Ozaki, Yoshinori Takagi, Junichi Nishinaka, Mitsuru Funato, Yoichi Kawakami Takuya Ozaki, Yoshinori Takagi, Junichi Nishinaka, Mitsuru Funato, Yoichi Kawakami Metalorganic vapor phase epitaxy of GaN and lattice-matched InGaN on ScAlMgO4(0001) substrates Metalorganic vapor phase epitaxy of GaN and lattice-matched InGaN on ScAlMgO4(0001) substrates Metalorganic vapor phase epitaxy of GaN and lattice-matched InGaN on ScAlMgO4(0001) substrates Applied Physics Express, 7 Applied Physics Express, 7 Applied Physics Express, 7 2014/01/01 公開
M. Funato; Y.S. Kim; Y. Ochi; A. Kaneta; Y. Kawakami; T. Miyoshi; S.-I. Nagahama M. Funato; Y.S. Kim; Y. Ochi; A. Kaneta; Y. Kawakami; T. Miyoshi; S.-I. Nagahama M. Funato; Y.S. Kim; Y. Ochi; A. Kaneta; Y. Kawakami; T. Miyoshi; S.-I. Nagahama Optical gain spectra of a (0001) InGaN green laser diode Optical gain spectra of a (0001) InGaN green laser diode Optical gain spectra of a (0001) InGaN green laser diode Applied Physics Express, 6, 12, 122704.1-122704.3 Applied Physics Express, 6, 12, 122704.1-122704.3 Applied Physics Express, 6, 12, 122704.1-122704.3 2013/12/25 英語 公開
M. Funato; Y.S. Kim; T. Hira; A. Kaneta; Y. Kawakami; T. Miyoshi; S.-I. Nagahama M. Funato; Y.S. Kim; T. Hira; A. Kaneta; Y. Kawakami; T. Miyoshi; S.-I. Nagahama M. Funato; Y.S. Kim; T. Hira; A. Kaneta; Y. Kawakami; T. Miyoshi; S.-I. Nagahama Remarkably suppressed luminescence inhomogeneity in a (0001) InGaN green laser structure Remarkably suppressed luminescence inhomogeneity in a (0001) InGaN green laser structure Remarkably suppressed luminescence inhomogeneity in a (0001) InGaN green laser structure Applied Physics Express, 6, 11, 111002.1-111002.4 Applied Physics Express, 6, 11, 111002.1-111002.4 Applied Physics Express, 6, 11, 111002.1-111002.4 2013/11/25 英語 公開
BANAL Ryan G., AKASHI Yosuke, MATSUDA Kazuhisa, HAYASHI Yuki, FUNATO Mitsuru, KAWAKAMI Yoichi BANAL Ryan G., AKASHI Yosuke, MATSUDA Kazuhisa, HAYASHI Yuki, FUNATO Mitsuru, KAWAKAMI Yoichi BANAL RYAN G., AKASHI YOSUKE, MATSUDA KAZUHISA, HAYASHI YUKI, FUNATO MITSURU, KAWAKAMI YOICHI Crack-Free Thick AlN Films Obtained by NH3 Nitridation of Sapphire Substrates Crack-Free Thick AlN Films Obtained by NH3 Nitridation of Sapphire Substrates Crack-Free Thick AlN Films Obtained by NH3 Nitridation of Sapphire Substrates Jpn J Appl Phys, 52, 8,Issue 2, 08JB21.108JB21.4 Jpn J Appl Phys, 52, 8,Issue 2, 08JB21.108JB21.4 Jpn J Appl Phys, 52, 8,Issue 2, 08JB21.108JB21.4 2013/08/25 英語 公開
M. Kaneko; H. Okumura; R. Ishii; M. Funato; Y. Kawakami; T. Kimoto; J. Suda M. Kaneko; H. Okumura; R. Ishii; M. Funato; Y. Kawakami; T. Kimoto; J. Suda M. Kaneko; H. Okumura; R. Ishii; M. Funato; Y. Kawakami; T. Kimoto; J. Suda Optical properties of highly strained AlN coherently grown on 6H-SiC(0001) Optical properties of highly strained AlN coherently grown on 6H-SiC(0001) Optical properties of highly strained AlN coherently grown on 6H-SiC(0001) Applied Physics Express, 6, 6, 062604.1-062604.4 Applied Physics Express, 6, 6, 062604.1-062604.4 Applied Physics Express, 6, 6, 062604.1-062604.4 2013/06/25 英語 公開
R. Ishii; A. Kaneta; M. Funato; Y. Kawakami R. Ishii; A. Kaneta; M. Funato; Y. Kawakami R. Ishii; A. Kaneta; M. Funato; Y. Kawakami Complete set of deformation potentials for AlN determined by reflectance spectroscopy under uniaxial stress Complete set of deformation potentials for AlN determined by reflectance spectroscopy under uniaxial stress Complete set of deformation potentials for AlN determined by reflectance spectroscopy under uniaxial stress Physical Review B - Condensed Matter and Materials Physics, 87, 23 Physical Review B - Condensed Matter and Materials Physics, 87, 23 Physical Review B - Condensed Matter and Materials Physics, 87, 23 2013/06/04 英語 公開
Y. Hayashi; R.G. Banal; M. Funato; Y. Kawakami Y. Hayashi; R.G. Banal; M. Funato; Y. Kawakami Y. Hayashi; R.G. Banal; M. Funato; Y. Kawakami Heteroepitaxy between wurtzite and corundum materials Heteroepitaxy between wurtzite and corundum materials Heteroepitaxy between wurtzite and corundum materials Journal of Applied Physics, 113, 18 Journal of Applied Physics, 113, 18 Journal of Applied Physics, 113, 18 2013/05/14 英語 公開
R. Bardoux; M. Funato; A. Kaneta; Y. Kawakami; A. Kikuchi; K. Kishino R. Bardoux; M. Funato; A. Kaneta; Y. Kawakami; A. Kikuchi; K. Kishino R. Bardoux; M. Funato; A. Kaneta; Y. Kawakami; A. Kikuchi; K. Kishino Two-photon absorption induced anti-Stokes emission in single InGaN/GAN quantum-dot-like objects Two-photon absorption induced anti-Stokes emission in single InGaN/GAN quantum-dot-like objects Two-photon absorption induced anti-Stokes emission in single InGaN/GAN quantum-dot-like objects Physica Status Solidi - Rapid Research Letters, 7, 5, 344-347 Physica Status Solidi - Rapid Research Letters, 7, 5, 344-347 Physica Status Solidi - Rapid Research Letters, 7, 5, 344-347 2013/05 英語 公開
R. Ishii; M. Funato; Y. Kawakami R. Ishii; M. Funato; Y. Kawakami R. Ishii; M. Funato; Y. Kawakami Huge electron-hole exchange interaction in aluminum nitride Huge electron-hole exchange interaction in aluminum nitride Huge electron-hole exchange interaction in aluminum nitride Physical Review B - Condensed Matter and Materials Physics, 87, 16 Physical Review B - Condensed Matter and Materials Physics, 87, 16 Physical Review B - Condensed Matter and Materials Physics, 87, 16 2013/04/30 英語 公開
X. Xu; M. Funato; Y. Kawakami; K. Okamoto; K. Tamada X. Xu; M. Funato; Y. Kawakami; K. Okamoto; K. Tamada X. Xu; M. Funato; Y. Kawakami; K. Okamoto; K. Tamada Grain size dependence of surface plasmon enhanced photoluminescence Grain size dependence of surface plasmon enhanced photoluminescence Grain size dependence of surface plasmon enhanced photoluminescence Optics Express, 21, 3, 3145-3151 Optics Express, 21, 3, 3145-3151 Optics Express, 21, 3, 3145-3151 2013/02/11 英語 公開
M. Funato; K. Matsuda; R.G. Banal; R. Ishii; Y. Kawakami M. Funato; K. Matsuda; R.G. Banal; R. Ishii; Y. Kawakami M. Funato; K. Matsuda; R.G. Banal; R. Ishii; Y. Kawakami Strong optical polarization in nonpolar (11̄00) Al<sub>x</sub>Ga <sub>1-x</sub>N/AlN quantum wells Strong optical polarization in nonpolar (11̄00) Al<sub>x</sub>Ga <sub>1-x</sub>N/AlN quantum wells Strong optical polarization in nonpolar (11̄00) Al<sub>x</sub>Ga <sub>1-x</sub>N/AlN quantum wells Physical Review B - Condensed Matter and Materials Physics, 87, 4 Physical Review B - Condensed Matter and Materials Physics, 87, 4 Physical Review B - Condensed Matter and Materials Physics, 87, 4 2013/01/25 英語 公開
R. Bardoux; M. Funato; A. Kaneta; Y. Kawakami; A. Kikuchi; K. Kishino R. Bardoux; M. Funato; A. Kaneta; Y. Kawakami; A. Kikuchi; K. Kishino R. Bardoux; M. Funato; A. Kaneta; Y. Kawakami; A. Kikuchi; K. Kishino Complex strain distribution in individual facetted inGaN/GaN nano-columnar heterostructures Complex strain distribution in individual facetted inGaN/GaN nano-columnar heterostructures Complex strain distribution in individual facetted inGaN/GaN nano-columnar heterostructures Optical Materials Express, 3, 1, 47-53 Optical Materials Express, 3, 1, 47-53 Optical Materials Express, 3, 1, 47-53 2013/01/01 英語 公開
R.G. Banal; Y. Akashi; K. Matsuda; Y. Hayashi; M. Funato; Y. Kawakami R.G. Banal; Y. Akashi; K. Matsuda; Y. Hayashi; M. Funato; Y. Kawakami R.G. Banal; Y. Akashi; K. Matsuda; Y. Hayashi; M. Funato; Y. Kawakami Crack-free thick AlN films obtained by NH<sub>3</sub> nitridation of sapphire substrates Crack-free thick AlN films obtained by NH<sub>3</sub> nitridation of sapphire substrates Crack-free thick AlN films obtained by NH<sub>3</sub> nitridation of sapphire substrates Japanese Journal of Applied Physics, 52, 8 PART 2 Japanese Journal of Applied Physics, 52, 8 PART 2 Japanese Journal of Applied Physics, 52, 8 PART 2 2013 英語 公開
P.A. Favuzzi; R. Bardoux; T. Asano; Y. Kawakami; S. Noda P.A. Favuzzi; R. Bardoux; T. Asano; Y. Kawakami; S. Noda P.A. Favuzzi; R. Bardoux; T. Asano; Y. Kawakami; S. Noda In plane manipulation of a dielectric nanobeam with gradient optical forces In plane manipulation of a dielectric nanobeam with gradient optical forces In plane manipulation of a dielectric nanobeam with gradient optical forces Optics Express, 21, 24, 29129-29139 Optics Express, 21, 24, 29129-29139 Optics Express, 21, 24, 29129-29139 2013 英語 公開
M. Funato; Y. Kawakami M. Funato; Y. Kawakami M. Funato; Y. Kawakami Semipolar faceting for ingan-based polychromatic LEDs Semipolar faceting for ingan-based polychromatic LEDs Semipolar faceting for ingan-based polychromatic LEDs CLEO: Applications and Technology, CLEO_AT 2013, ATh3N.1 CLEO: Applications and Technology, CLEO_AT 2013, ATh3N.1 CLEO: Applications and Technology, CLEO_AT 2013, ATh3N.1 2013 英語 公開
T. Kyono; Y. Enya; K. Nishizuka; M. Ueno; T. Nakamura; Y. Kawakami T. Kyono; Y. Enya; K. Nishizuka; M. Ueno; T. Nakamura; Y. Kawakami T. Kyono; Y. Enya; K. Nishizuka; M. Ueno; T. Nakamura; Y. Kawakami Optical characteristics of InGaN quantum wells for high-power and high-efficiency true green laser diodes Optical characteristics of InGaN quantum wells for high-power and high-efficiency true green laser diodes Optical characteristics of InGaN quantum wells for high-power and high-efficiency true green laser diodes SEI Technical Review, 77, 107-112 SEI Technical Review, 77, 107-112 SEI Technical Review, 77, 107-112 2013 英語 公開
P.A. Favuzzi; R. Bardoux; T. Asano; Y. Kawakami; S. Noda P.A. Favuzzi; R. Bardoux; T. Asano; Y. Kawakami; S. Noda P.A. Favuzzi; R. Bardoux; T. Asano; Y. Kawakami; S. Noda Ab-initio design of nanophotonic waveguides for tunable, bidirectional optical forces Ab-initio design of nanophotonic waveguides for tunable, bidirectional optical forces Ab-initio design of nanophotonic waveguides for tunable, bidirectional optical forces Optics Express, 20, 22, 24488-24495 Optics Express, 20, 22, 24488-24495 Optics Express, 20, 22, 24488-24495 2012/10/22 英語 公開
A. Kaneta; Y.-S. Kim; M. Funato; Y. Kawakami; Y. Enya; T. Kyono; M. Ueno; T. Nakamura A. Kaneta; Y.-S. Kim; M. Funato; Y. Kawakami; Y. Enya; T. Kyono; M. Ueno; T. Nakamura A. Kaneta; Y.-S. Kim; M. Funato; Y. Kawakami; Y. Enya; T. Kyono; M. Ueno; T. Nakamura Nanoscopic photoluminescence properties of a green-emitting InGaN single quantum well on a {2021} GaN substrate probed by scanning near-field optical microscopy Nanoscopic photoluminescence properties of a green-emitting InGaN single quantum well on a {2021} GaN substrate probed by scanning near-field optical microscopy Nanoscopic photoluminescence properties of a green-emitting InGaN single quantum well on a {2021} GaN substrate probed by scanning near-field optical microscopy Applied Physics Express, 5, 10 Applied Physics Express, 5, 10 Applied Physics Express, 5, 10 2012/10 英語 公開
J. Nishinaka; M. Funato; Y. Kawakami J. Nishinaka; M. Funato; Y. Kawakami J. Nishinaka; M. Funato; Y. Kawakami Anisotropic lattice relaxation in non-c-plane InGaN/GaN multiple quantum wells Anisotropic lattice relaxation in non-c-plane InGaN/GaN multiple quantum wells Anisotropic lattice relaxation in non-c-plane InGaN/GaN multiple quantum wells Journal of Applied Physics, 112, 3 Journal of Applied Physics, 112, 3 Journal of Applied Physics, 112, 3 2012/08/01 英語 公開
M. Funato; K. Matsuda; R.G. Banal; R. Ishii; Y. Kawakami M. Funato; K. Matsuda; R.G. Banal; R. Ishii; Y. Kawakami M. Funato; K. Matsuda; R.G. Banal; R. Ishii; Y. Kawakami Homoepitaxy and photoluminescence properties of (0001) AlN Homoepitaxy and photoluminescence properties of (0001) AlN Homoepitaxy and photoluminescence properties of (0001) AlN Applied Physics Express, 5, 8 Applied Physics Express, 5, 8 Applied Physics Express, 5, 8 2012/08 英語 公開
A. Kaneta; R. Fujimoto; T. Hashimoto; K. Nishimura; M. Funato; Y. Kawakami A. Kaneta; R. Fujimoto; T. Hashimoto; K. Nishimura; M. Funato; Y. Kawakami A. Kaneta; R. Fujimoto; T. Hashimoto; K. Nishimura; M. Funato; Y. Kawakami Instrumentation for dual-probe scanning near-field optical microscopy Instrumentation for dual-probe scanning near-field optical microscopy Instrumentation for dual-probe scanning near-field optical microscopy Review of Scientific Instruments, 83, 8 Review of Scientific Instruments, 83, 8 Review of Scientific Instruments, 83, 8 2012/08 英語 公開
R. Fujimoto; A. Kaneta; K. Okamoto; M. Funato; Y. Kawakami R. Fujimoto; A. Kaneta; K. Okamoto; M. Funato; Y. Kawakami R. Fujimoto; A. Kaneta; K. Okamoto; M. Funato; Y. Kawakami Interference of the surface plasmon polaritons with an Ag waveguide probed by dual-probe scanning near-field optical microscopy Interference of the surface plasmon polaritons with an Ag waveguide probed by dual-probe scanning near-field optical microscopy Interference of the surface plasmon polaritons with an Ag waveguide probed by dual-probe scanning near-field optical microscopy Applied Surface Science, 258, 19, 7372-7376 Applied Surface Science, 258, 19, 7372-7376 Applied Surface Science, 258, 19, 7372-7376 2012/07/15 英語 公開
A. Oskooi; P.A. Favuzzi; Y. Tanaka; H. Shigeta; Y. Kawakami; S. Noda A. Oskooi; P.A. Favuzzi; Y. Tanaka; H. Shigeta; Y. Kawakami; S. Noda A. Oskooi; P.A. Favuzzi; Y. Tanaka; H. Shigeta; Y. Kawakami; S. Noda Partially disordered photonic-crystal thin films for enhanced and robust photovoltaics Partially disordered photonic-crystal thin films for enhanced and robust photovoltaics Partially disordered photonic-crystal thin films for enhanced and robust photovoltaics Applied Physics Letters, 100, 18 Applied Physics Letters, 100, 18 Applied Physics Letters, 100, 18 2012/04/30 英語 公開
M. Funato; T. Kotani; T. Kondou; Y. Kawakami M. Funato; T. Kotani; T. Kondou; Y. Kawakami M. Funato; T. Kotani; T. Kondou; Y. Kawakami Semipolar {nn̄01} InGaN/GaN ridge quantum wells (n=1-3) fabricated by a regrowth technique Semipolar {nn̄01} InGaN/GaN ridge quantum wells (n=1-3) fabricated by a regrowth technique Semipolar {nn̄01} InGaN/GaN ridge quantum wells (n=1-3) fabricated by a regrowth technique Applied Physics Letters, 100, 16 Applied Physics Letters, 100, 16 Applied Physics Letters, 100, 16 2012/04/16 英語 公開
T. Suski; G. Staszczak; S.P. Lepkowski; P. Perlin; R. Czernecki; I. Grzegory; M. Funato; Y. Kawakami T. Suski; G. Staszczak; S.P. Lepkowski; P. Perlin; R. Czernecki; I. Grzegory; M. Funato; Y. Kawakami T. Suski; G. Staszczak; S.P. Lepkowski; P. Perlin; R. Czernecki; I. Grzegory; M. Funato; Y. Kawakami Unambiguous relationship between photoluminescence energy and its pressure evolution in InGaN/GaN quantum wells Unambiguous relationship between photoluminescence energy and its pressure evolution in InGaN/GaN quantum wells Unambiguous relationship between photoluminescence energy and its pressure evolution in InGaN/GaN quantum wells Physica Status Solidi (B) Basic Research, 249, 3, 476-479 Physica Status Solidi (B) Basic Research, 249, 3, 476-479 Physica Status Solidi (B) Basic Research, 249, 3, 476-479 2012/03 英語 公開
J. Danhof; H.-M. Solowan; U.T. Schwarz; A. Kaneta; Y. Kawakami; D. Schiavon; T. Meyer; M. Peter J. Danhof; H.-M. Solowan; U.T. Schwarz; A. Kaneta; Y. Kawakami; D. Schiavon; T. Meyer; M. Peter J. Danhof; H.-M. Solowan; U.T. Schwarz; A. Kaneta; Y. Kawakami; D. Schiavon; T. Meyer; M. Peter Lateral charge carrier diffusion in InGaN quantum wells Lateral charge carrier diffusion in InGaN quantum wells Lateral charge carrier diffusion in InGaN quantum wells Physica Status Solidi (B) Basic Research, 249, 3, 480-484 Physica Status Solidi (B) Basic Research, 249, 3, 480-484 Physica Status Solidi (B) Basic Research, 249, 3, 480-484 2012/03 英語 公開
船戸 充; 川上 養一 船戸 充; 川上 養一 蛍光体フリー多色LED : テイラーメイド光源の実現に向けて (特集 LEDと照明) 蛍光体フリー多色LED : テイラーメイド光源の実現に向けて (特集 LEDと照明) ディスプレイ, 18, 2, 51-56 ディスプレイ, 18, 2, 51-56 , 18, 2, 51-56 2012/02 日本語 公開
A. Oskooi; P.A. Favuzzi; Y. Kawakami; S. Noda A. Oskooi; P.A. Favuzzi; Y. Kawakami; S. Noda A. Oskooi; P.A. Favuzzi; Y. Kawakami; S. Noda Tailoring repulsive optical forces in nanophotonic waveguides Tailoring repulsive optical forces in nanophotonic waveguides Tailoring repulsive optical forces in nanophotonic waveguides Optics Letters, 36, 23, 4638-4640 Optics Letters, 36, 23, 4638-4640 Optics Letters, 36, 23, 4638-4640 2011/12/01 英語 公開
石井良太;金田昭男;BANAL Ryan;船戸充;川上養一 石井良太;金田昭男;BANAL Ryan;船戸充;川上養一 窒化アルミニウムの電子状態に対する歪みの効果 窒化アルミニウムの電子状態に対する歪みの効果 電子情報通信学会技術研究報告, 111, 292(LQE2011 96-122), 77-80 電子情報通信学会技術研究報告, 111, 292(LQE2011 96-122), 77-80 , 111, 292(LQE2011 96-122), 77-80 2011/11/10 日本語 公開
石井 良太; 金田 昭男; バナル ライアン; 船戸 充; 川上 養一 石井 良太; 金田 昭男; バナル ライアン; 船戸 充; 川上 養一 窒化アルミニウムの電子状態に対する歪みの効果(窒化物半導体光・電子デバイス・材料,関連技術,及び一般) 窒化アルミニウムの電子状態に対する歪みの効果(窒化物半導体光・電子デバイス・材料,関連技術,及び一般) 電子情報通信学会技術研究報告. CPM, 電子部品・材料, 111, 291, 77-80 電子情報通信学会技術研究報告. CPM, 電子部品・材料, 111, 291, 77-80 , 111, 291, 77-80 2011/11/10 日本語 公開
K. Kojima; A.A. Yamaguchi; M. Funato; Y. Kawakami; S. Noda K. Kojima; A.A. Yamaguchi; M. Funato; Y. Kawakami; S. Noda K. Kojima; A.A. Yamaguchi; M. Funato; Y. Kawakami; S. Noda Impact of nonpolar AlGaN quantum wells on deep ultraviolet laser diodes Impact of nonpolar AlGaN quantum wells on deep ultraviolet laser diodes Impact of nonpolar AlGaN quantum wells on deep ultraviolet laser diodes Journal of Applied Physics, 110, 4 Journal of Applied Physics, 110, 4 Journal of Applied Physics, 110, 4 2011/08/15 英語 公開
J. Danhof; U.T. Schwarz; A. Kaneta; Y. Kawakami J. Danhof; U.T. Schwarz; A. Kaneta; Y. Kawakami J. Danhof; U.T. Schwarz; A. Kaneta; Y. Kawakami Time-of-flight measurements of charge carrier diffusion in In <sub>x</sub>Ga<sub>1-x</sub>N/GaN quantum wells Time-of-flight measurements of charge carrier diffusion in In <sub>x</sub>Ga<sub>1-x</sub>N/GaN quantum wells Time-of-flight measurements of charge carrier diffusion in In <sub>x</sub>Ga<sub>1-x</sub>N/GaN quantum wells Physical Review B - Condensed Matter and Materials Physics, 84, 3 Physical Review B - Condensed Matter and Materials Physics, 84, 3 Physical Review B - Condensed Matter and Materials Physics, 84, 3 2011/07/29 英語 公開
R.G. Banal; M. Funato; Y. Kawakami R.G. Banal; M. Funato; Y. Kawakami R.G. Banal; M. Funato; Y. Kawakami Extremely high internal quantum efficiencies from AlGaN/AlN quantum wells emitting in the deep ultraviolet spectral region Extremely high internal quantum efficiencies from AlGaN/AlN quantum wells emitting in the deep ultraviolet spectral region Extremely high internal quantum efficiencies from AlGaN/AlN quantum wells emitting in the deep ultraviolet spectral region Applied Physics Letters, 99, 1 Applied Physics Letters, 99, 1 Applied Physics Letters, 99, 1 2011/07/04 英語 公開
G. Staszczak; T. Suski; A. Khachapuridze; P. Perlin; M. Funato; Y. Kawakami G. Staszczak; T. Suski; A. Khachapuridze; P. Perlin; M. Funato; Y. Kawakami G. Staszczak; T. Suski; A. Khachapuridze; P. Perlin; M. Funato; Y. Kawakami Different behavior of semipolar and polar InGaN/GaN quantum wells: Pressure studies of photoluminescence Different behavior of semipolar and polar InGaN/GaN quantum wells: Pressure studies of photoluminescence Different behavior of semipolar and polar InGaN/GaN quantum wells: Pressure studies of photoluminescence Physica Status Solidi (A) Applications and Materials Science, 208, 7, 1526-1528 Physica Status Solidi (A) Applications and Materials Science, 208, 7, 1526-1528 Physica Status Solidi (A) Applications and Materials Science, 208, 7, 1526-1528 2011/07 英語 公開
K. Oikawa; C. Feldmeier; U.T. Schwarz; Y. Kawakami; R. Micheletto K. Oikawa; C. Feldmeier; U.T. Schwarz; Y. Kawakami; R. Micheletto K. Oikawa; C. Feldmeier; U.T. Schwarz; Y. Kawakami; R. Micheletto Real-time near-field evidence of optical blinking in the photoluminescence of inGaN by scanning near-field optical microscope Real-time near-field evidence of optical blinking in the photoluminescence of inGaN by scanning near-field optical microscope Real-time near-field evidence of optical blinking in the photoluminescence of inGaN by scanning near-field optical microscope Optical Materials Express, 1, 2, 158-163 Optical Materials Express, 1, 2, 158-163 Optical Materials Express, 1, 2, 158-163 2011/06/01 英語 公開
R. Bardoux; A. Kaneta; M. Funato; K. Okamoto; Y. Kawakami; A. Kikuchi; K. Kishino R. Bardoux; A. Kaneta; M. Funato; K. Okamoto; Y. Kawakami; A. Kikuchi; K. Kishino R. Bardoux; A. Kaneta; M. Funato; K. Okamoto; Y. Kawakami; A. Kikuchi; K. Kishino Single mode emission and non-stochastic laser system based on disordered point-sized structures: Toward a tuneable random laser Single mode emission and non-stochastic laser system based on disordered point-sized structures: Toward a tuneable random laser Single mode emission and non-stochastic laser system based on disordered point-sized structures: Toward a tuneable random laser Optics Express, 19, 10, 9262-9268 Optics Express, 19, 10, 9262-9268 Optics Express, 19, 10, 9262-9268 2011/05/09 英語 公開
Y. Kawakami; A. Kanai; A. Kaneta; M. Funato; A. Kikuchi; K. Kishino Y. Kawakami; A. Kanai; A. Kaneta; M. Funato; A. Kikuchi; K. Kishino Y. Kawakami; A. Kanai; A. Kaneta; M. Funato; A. Kikuchi; K. Kishino Micromirror arrays to assess luminescent nano-objects Micromirror arrays to assess luminescent nano-objects Micromirror arrays to assess luminescent nano-objects Review of Scientific Instruments, 82, 5 Review of Scientific Instruments, 82, 5 Review of Scientific Instruments, 82, 5 2011/05 英語 公開
Y.S. Kim; A. Kaneta; M. Funato; Y. Kawakami; T. Kyono; M. Ueno; T. Nakamura Y.S. Kim; A. Kaneta; M. Funato; Y. Kawakami; T. Kyono; M. Ueno; T. Nakamura Y.S. Kim; A. Kaneta; M. Funato; Y. Kawakami; T. Kyono; M. Ueno; T. Nakamura Optical gain spectroscopy of a semipolar {202̄1}-oriented green InGaN laser diode Optical gain spectroscopy of a semipolar {202̄1}-oriented green InGaN laser diode Optical gain spectroscopy of a semipolar {202̄1}-oriented green InGaN laser diode Applied Physics Express, 4, 5 Applied Physics Express, 4, 5 Applied Physics Express, 4, 5 2011/05 英語 公開
船戸充;川上養一 船戸充;川上養一 蛍光体フリー白色・多色発光ダイオードの開発 蛍光体フリー白色・多色発光ダイオードの開発 応用物理, 80, 4, 309-313 応用物理, 80, 4, 309-313 , 80, 4, 309-313 2011/04/10 日本語 公開
Y. Iwata; T. Oto; A. Kaneta; R.G. Banal; M. Funato; Y. Kawakami Y. Iwata; T. Oto; A. Kaneta; R.G. Banal; M. Funato; Y. Kawakami Y. Iwata; T. Oto; A. Kaneta; R.G. Banal; M. Funato; Y. Kawakami Time-resolved photoluminescence of Al-rich AlGaN/AlN quantum wells under selective excitation Time-resolved photoluminescence of Al-rich AlGaN/AlN quantum wells under selective excitation Time-resolved photoluminescence of Al-rich AlGaN/AlN quantum wells under selective excitation Physica Status Solidi (C) Current Topics in Solid State Physics, 8, 7-8, 2191-2193 Physica Status Solidi (C) Current Topics in Solid State Physics, 8, 7-8, 2191-2193 Physica Status Solidi (C) Current Topics in Solid State Physics, 8, 7-8, 2191-2193 2011 英語 公開
T. Oto; R.G. Banal; K. Kataoka; M. Funato; Y. Kawakami T. Oto; R.G. Banal; K. Kataoka; M. Funato; Y. Kawakami T. Oto; R.G. Banal; K. Kataoka; M. Funato; Y. Kawakami 100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam 100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam 100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam Nature Photonics, 4, 11, 767-771 Nature Photonics, 4, 11, 767-771 Nature Photonics, 4, 11, 767-771 2010/11 英語 公開
K. Kojima; M. Funato; Y. Kawakami; S. Noda K. Kojima; M. Funato; Y. Kawakami; S. Noda K. Kojima; M. Funato; Y. Kawakami; S. Noda Valence band effective mass of non-c-plane nitride heterostructures Valence band effective mass of non-c-plane nitride heterostructures Valence band effective mass of non-c-plane nitride heterostructures Journal of Applied Physics, 107, 12 Journal of Applied Physics, 107, 12 Journal of Applied Physics, 107, 12 2010/06/15 英語 公開
M. Funato; D. Inoue; M. Ueda; Y. Kawakami; Y. Narukawa; T. Mukai M. Funato; D. Inoue; M. Ueda; Y. Kawakami; Y. Narukawa; T. Mukai M. Funato; D. Inoue; M. Ueda; Y. Kawakami; Y. Narukawa; T. Mukai Strain states in semipolar III-nitride semiconductor quantum wells Strain states in semipolar III-nitride semiconductor quantum wells Strain states in semipolar III-nitride semiconductor quantum wells Journal of Applied Physics, 107, 12 Journal of Applied Physics, 107, 12 Journal of Applied Physics, 107, 12 2010/06/15 英語 公開
V. Ramesh; A. Kikuchi; K. Kishino; M. Funato; Y. Kawakami V. Ramesh; A. Kikuchi; K. Kishino; M. Funato; Y. Kawakami V. Ramesh; A. Kikuchi; K. Kishino; M. Funato; Y. Kawakami Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well Journal of Applied Physics, 107, 11 Journal of Applied Physics, 107, 11 Journal of Applied Physics, 107, 11 2010/06/01 英語 公開
岡本 晃一; Bardoux Richard; 川上 養一 岡本 晃一; Bardoux Richard; 川上 養一 伝搬型および局在型表面プラズモンを利用した高効率発光・受光素子(量子光学,非線形光学,超高速現象,レーザ基礎,及び一般) 伝搬型および局在型表面プラズモンを利用した高効率発光・受光素子(量子光学,非線形光学,超高速現象,レーザ基礎,及び一般) 電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス, 110, 66, 63-68 電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス, 110, 66, 63-68 , 110, 66, 63-68 2010/05/21 日本語 公開
船戸充;上田雅也;小島一信;川上養一 船戸充;上田雅也;小島一信;川上養一 半極性(11-22)面上InGaN量子井戸の光学特性と緑色レーザー実現の可能性 半極性(11-22)面上InGaN量子井戸の光学特性と緑色レーザー実現の可能性 レーザー研究, 38, 4, 255-260 レーザー研究, 38, 4, 255-260 , 38, 4, 255-260 2010/04/15 日本語 公開
金田 昭男; 船戸 充; 川上 養一 金田 昭男; 船戸 充; 川上 養一 近接場光学顕微鏡によるInGaNナノ構造の発光機構解明と高効率化へのアプローチ (特集 ナノフォトニクス) 近接場光学顕微鏡によるInGaNナノ構造の発光機構解明と高効率化へのアプローチ (特集 ナノフォトニクス) O plus E, 32, 2, 157-164 O plus E, 32, 2, 157-164 , 32, 2, 157-164 2010/02 日本語 公開
Y. Kawakami; A. Kaneta; L. Su; Y. Zhu; K. Okamoto; M. Funato; A. Kikuchi; K. Kishino Y. Kawakami; A. Kaneta; L. Su; Y. Zhu; K. Okamoto; M. Funato; A. Kikuchi; K. Kishino Y. Kawakami; A. Kaneta; L. Su; Y. Zhu; K. Okamoto; M. Funato; A. Kikuchi; K. Kishino Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching Journal of Applied Physics, 107, 2 Journal of Applied Physics, 107, 2 Journal of Applied Physics, 107, 2 2010/01/15 英語 公開
R.G. Banal; M. Funato; Y. Kawakami R.G. Banal; M. Funato; Y. Kawakami R.G. Banal; M. Funato; Y. Kawakami Characteristics of high Al-content AlGaN/AlN quantum wells fabricated by modified migration enhanced epitaxy Characteristics of high Al-content AlGaN/AlN quantum wells fabricated by modified migration enhanced epitaxy Characteristics of high Al-content AlGaN/AlN quantum wells fabricated by modified migration enhanced epitaxy Physica Status Solidi (C) Current Topics in Solid State Physics, 7, 7-8, 2111-2114 Physica Status Solidi (C) Current Topics in Solid State Physics, 7, 7-8, 2111-2114 Physica Status Solidi (C) Current Topics in Solid State Physics, 7, 7-8, 2111-2114 2010 英語 公開
T. Oto; R.G. Banal; M. Funato; Y. Kawakami T. Oto; R.G. Banal; M. Funato; Y. Kawakami T. Oto; R.G. Banal; M. Funato; Y. Kawakami Deep ultraviolet emission mechanisms in highly excited Al <sub>0.79</sub>Ga<sub>0.21</sub>N/AlN quantum wells Deep ultraviolet emission mechanisms in highly excited Al <sub>0.79</sub>Ga<sub>0.21</sub>N/AlN quantum wells Deep ultraviolet emission mechanisms in highly excited Al <sub>0.79</sub>Ga<sub>0.21</sub>N/AlN quantum wells Physica Status Solidi (C) Current Topics in Solid State Physics, 7, 7-8, 1909-1912 Physica Status Solidi (C) Current Topics in Solid State Physics, 7, 7-8, 1909-1912 Physica Status Solidi (C) Current Topics in Solid State Physics, 7, 7-8, 1909-1912 2010 英語 公開
M. Funato; A. Kaneta; Y. Kawakami; Y. Enya; K. Nishizuka; M. Ueno; T. Nakamura M. Funato; A. Kaneta; Y. Kawakami; Y. Enya; K. Nishizuka; M. Ueno; T. Nakamura M. Funato; A. Kaneta; Y. Kawakami; Y. Enya; K. Nishizuka; M. Ueno; T. Nakamura Weak carrier/exciton localization in InGaN quantum wells for green laser diodes fabricated on semi-polar {202̄1} GaN substrates Weak carrier/exciton localization in InGaN quantum wells for green laser diodes fabricated on semi-polar {202̄1} GaN substrates Weak carrier/exciton localization in InGaN quantum wells for green laser diodes fabricated on semi-polar {202̄1} GaN substrates Applied Physics Express, 3, 2 Applied Physics Express, 3, 2 Applied Physics Express, 3, 2 2010 英語 公開
R. Ishii; A. Kaneta; M. Funato; Y. Kawakami; A.A. Yamaguchi R. Ishii; A. Kaneta; M. Funato; Y. Kawakami; A.A. Yamaguchi R. Ishii; A. Kaneta; M. Funato; Y. Kawakami; A.A. Yamaguchi All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress: Definite breakdown of the quasicubic approximation All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress: Definite breakdown of the quasicubic approximation All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress: Definite breakdown of the quasicubic approximation Physical Review B - Condensed Matter and Materials Physics, 81, 15 Physical Review B - Condensed Matter and Materials Physics, 81, 15 Physical Review B - Condensed Matter and Materials Physics, 81, 15 2010 英語 公開
K. Kojima; A.A. Yamaguchi; M. Funato; Y. Kawakami; S. Noda K. Kojima; A.A. Yamaguchi; M. Funato; Y. Kawakami; S. Noda K. Kojima; A.A. Yamaguchi; M. Funato; Y. Kawakami; S. Noda Gain anisotropy analysis in green ingan quantum wells with inhomogeneous broadening Gain anisotropy analysis in green ingan quantum wells with inhomogeneous broadening Gain anisotropy analysis in green ingan quantum wells with inhomogeneous broadening Japanese Journal of Applied Physics, 49, 8 PART 1 Japanese Journal of Applied Physics, 49, 8 PART 1 Japanese Journal of Applied Physics, 49, 8 PART 1 2010 英語 公開
K. Okamoto; Y. Kawakami K. Okamoto; Y. Kawakami K. Okamoto; Y. Kawakami Enhancements of emission rates and efficiencies by surface plasmon coupling Enhancements of emission rates and efficiencies by surface plasmon coupling Enhancements of emission rates and efficiencies by surface plasmon coupling Physica Status Solidi (C) Current Topics in Solid State Physics, 7, 10, 2582-2585 Physica Status Solidi (C) Current Topics in Solid State Physics, 7, 10, 2582-2585 Physica Status Solidi (C) Current Topics in Solid State Physics, 7, 10, 2582-2585 2010 英語 公開
A. Kaneta; T. Hashimoto; K. Nishimura; M. Funato; Y. Kawakami A. Kaneta; T. Hashimoto; K. Nishimura; M. Funato; Y. Kawakami A. Kaneta; T. Hashimoto; K. Nishimura; M. Funato; Y. Kawakami Visualization of the local carrier dynamics in an InGaN quantum well using dual-probe scanning near-field optical microscopy Visualization of the local carrier dynamics in an InGaN quantum well using dual-probe scanning near-field optical microscopy Visualization of the local carrier dynamics in an InGaN quantum well using dual-probe scanning near-field optical microscopy Applied Physics Express, 3, 10 Applied Physics Express, 3, 10 Applied Physics Express, 3, 10 2010 英語 公開
M. Funato; M. Ueda; D. Inoue; Y. Kawakami; Y. Narukawa; T. Mukai M. Funato; M. Ueda; D. Inoue; Y. Kawakami; Y. Narukawa; T. Mukai M. Funato; M. Ueda; D. Inoue; Y. Kawakami; Y. Narukawa; T. Mukai Experimental and theoretical considerations of polarization field direction in semipolar InGaN/GaN Quantum Wells Experimental and theoretical considerations of polarization field direction in semipolar InGaN/GaN Quantum Wells Experimental and theoretical considerations of polarization field direction in semipolar InGaN/GaN Quantum Wells Applied Physics Express, 3, 7 Applied Physics Express, 3, 7 Applied Physics Express, 3, 7 2010 英語 公開
金田昭男;船戸充;川上養一 金田昭男;船戸充;川上養一 近接場光学顕微鏡によるInGaN量子構造の欠陥と光学特性の相関の評価 近接場光学顕微鏡によるInGaN量子構造の欠陥と光学特性の相関の評価 日本結晶成長学会誌, 36, 3, 178-190 日本結晶成長学会誌, 36, 3, 178-190 , 36, 3, 178-190 2009/10 日本語 公開
川上 養一 川上 養一 注目の無極性面・半極性面発光デバイス (特集 注目の無極性面・半極性面発光デバイス) 注目の無極性面・半極性面発光デバイス (特集 注目の無極性面・半極性面発光デバイス) オプトロニクス, 29, 9, 122-124 オプトロニクス, 29, 9, 122-124 , 29, 9, 122-124 2009/09 日本語 公開
船戸 充; 川上 養一 船戸 充; 川上 養一 半極性面上InGaN系緑色LDの可能性 (特集 注目の無極性面・半極性面発光デバイス) 半極性面上InGaN系緑色LDの可能性 (特集 注目の無極性面・半極性面発光デバイス) オプトロニクス, 29, 9, 142-145 オプトロニクス, 29, 9, 142-145 , 29, 9, 142-145 2009/09 日本語 公開
K. Kojima; H. Kamon; M. Funato; Y. Kawakami K. Kojima; H. Kamon; M. Funato; Y. Kawakami K. Kojima; H. Kamon; M. Funato; Y. Kawakami Optical anisotropy control of non-c-plane InGaN quantum wells Optical anisotropy control of non-c-plane InGaN quantum wells Optical anisotropy control of non-c-plane InGaN quantum wells Japanese Journal of Applied Physics, 48, 8 Japanese Journal of Applied Physics, 48, 8 Japanese Journal of Applied Physics, 48, 8 2009/08 英語 公開
川上 養一; 船戸 充 川上 養一; 船戸 充 蛍光体フリー白色・多色LED (特集 発光デバイスの現状と将来(Part 2)無機発光デバイス) 蛍光体フリー白色・多色LED (特集 発光デバイスの現状と将来(Part 2)無機発光デバイス) 未来材料, 9, 7, 18-24 未来材料, 9, 7, 18-24 , 9, 7, 18-24 2009/07 日本語 公開
R.G. Banal; M. Funato; Y. Kawakami R.G. Banal; M. Funato; Y. Kawakami R.G. Banal; M. Funato; Y. Kawakami Growth characteristics of AlN on sapphire substrates by modified migration-enhanced epitaxy Growth characteristics of AlN on sapphire substrates by modified migration-enhanced epitaxy Growth characteristics of AlN on sapphire substrates by modified migration-enhanced epitaxy Journal of Crystal Growth, 311, 10, 2834-2836 Journal of Crystal Growth, 311, 10, 2834-2836 Journal of Crystal Growth, 311, 10, 2834-2836 2009/05/01 英語 公開
R. Bardoux; A. Kaneta; M. Funato; Y. Kawakami; A. Kikuchi; K. Kishino R. Bardoux; A. Kaneta; M. Funato; Y. Kawakami; A. Kikuchi; K. Kishino R. Bardoux; A. Kaneta; M. Funato; Y. Kawakami; A. Kikuchi; K. Kishino Positive binding energy of a biexciton confined in a localization center formed in a single Inx Ga1-x N/GaN quantum disk Positive binding energy of a biexciton confined in a localization center formed in a single Inx Ga1-x N/GaN quantum disk Positive binding energy of a biexciton confined in a localization center formed in a single Inx Ga1-x N/GaN quantum disk Physical Review B - Condensed Matter and Materials Physics, 79, 15 Physical Review B - Condensed Matter and Materials Physics, 79, 15 Physical Review B - Condensed Matter and Materials Physics, 79, 15 2009/04 英語 公開
R.G. Banal; M. Funato; Y. Kawakami R.G. Banal; M. Funato; Y. Kawakami R.G. Banal; M. Funato; Y. Kawakami Optical anisotropy in [0001]-oriented Alx Ga1-x N/AlN quantum wells (x>0.69) Optical anisotropy in [0001]-oriented Alx Ga1-x N/AlN quantum wells (x>0.69) Optical anisotropy in [0001]-oriented Alx Ga1-x N/AlN quantum wells (x>0.69) Physical Review B - Condensed Matter and Materials Physics, 79, 12 Physical Review B - Condensed Matter and Materials Physics, 79, 12 Physical Review B - Condensed Matter and Materials Physics, 79, 12 2009/03 英語 公開
岡本 晃一; 川上 養一 岡本 晃一; 川上 養一 表面プラズモンを用いた高輝度LED (特集 LEDとデバイス技術) 表面プラズモンを用いた高輝度LED (特集 LEDとデバイス技術) ディスプレイ, 15, 2, 10-16 ディスプレイ, 15, 2, 10-16 , 15, 2, 10-16 2009/02 日本語 公開
M. Funato; Y. Kawakami M. Funato; Y. Kawakami M. Funato; Y. Kawakami Semipolar III nitride semiconductors: Crystal growth, device fabrication, and optical anisotropy Semipolar III nitride semiconductors: Crystal growth, device fabrication, and optical anisotropy Semipolar III nitride semiconductors: Crystal growth, device fabrication, and optical anisotropy MRS Bulletin, 34, 5, 334-340 MRS Bulletin, 34, 5, 334-340 MRS Bulletin, 34, 5, 334-340 2009 英語 公開
K. Okamoto; Y. Kawakami K. Okamoto; Y. Kawakami K. Okamoto; Y. Kawakami High-efficiency InGaN/GaN light emitters based on nanophotonics and plasmonics High-efficiency InGaN/GaN light emitters based on nanophotonics and plasmonics High-efficiency InGaN/GaN light emitters based on nanophotonics and plasmonics IEEE Journal on Selected Topics in Quantum Electronics, 15, 4, 1199-1209 IEEE Journal on Selected Topics in Quantum Electronics, 15, 4, 1199-1209 IEEE Journal on Selected Topics in Quantum Electronics, 15, 4, 1199-1209 2009 英語 公開
R. Micheletto; M. Allegrini; Y. Kawakami R. Micheletto; M. Allegrini; Y. Kawakami R. Micheletto; M. Allegrini; Y. Kawakami Near-field evidence of local polarized emission centers in InGaN/GaN materials Near-field evidence of local polarized emission centers in InGaN/GaN materials Near-field evidence of local polarized emission centers in InGaN/GaN materials Applied Physics Letters, 95, 21 Applied Physics Letters, 95, 21 Applied Physics Letters, 95, 21 2009 英語 公開
C. Feldmeier; M. Abiko; U.T. Schwarz; Y. Kawakami; R. Micheletto C. Feldmeier; M. Abiko; U.T. Schwarz; Y. Kawakami; R. Micheletto C. Feldmeier; M. Abiko; U.T. Schwarz; Y. Kawakami; R. Micheletto Transient memory effect in the photoluminescence of InGaN single quantum wells Transient memory effect in the photoluminescence of InGaN single quantum wells Transient memory effect in the photoluminescence of InGaN single quantum wells Optics Express, 17, 25, 22855-22860 Optics Express, 17, 25, 22855-22860 Optics Express, 17, 25, 22855-22860 2009 英語 公開
R.G. Banal; M. Funato; Y. Kawakami R.G. Banal; M. Funato; Y. Kawakami R.G. Banal; M. Funato; Y. Kawakami Surface diffusion during metalorganic vapor phase epitaxy of AlN Surface diffusion during metalorganic vapor phase epitaxy of AlN Surface diffusion during metalorganic vapor phase epitaxy of AlN Physica Status Solidi (C) Current Topics in Solid State Physics, 6, 2, 599-602 Physica Status Solidi (C) Current Topics in Solid State Physics, 6, 2, 599-602 Physica Status Solidi (C) Current Topics in Solid State Physics, 6, 2, 599-602 2009 英語 公開
M. Ueda; M. Funato; K. Kojima; Y. Kawakami; Y. Narukawa; T. Mukai M. Ueda; M. Funato; K. Kojima; Y. Kawakami; Y. Narukawa; T. Mukai M. Ueda; M. Funato; K. Kojima; Y. Kawakami; Y. Narukawa; T. Mukai Polarization switching phenomena in semipolar Inx Ga1-x N/GaN quantum well active layers Polarization switching phenomena in semipolar Inx Ga1-x N/GaN quantum well active layers Polarization switching phenomena in semipolar Inx Ga1-x N/GaN quantum well active layers Physical Review B - Condensed Matter and Materials Physics, 78, 23 Physical Review B - Condensed Matter and Materials Physics, 78, 23 Physical Review B - Condensed Matter and Materials Physics, 78, 23 2008/12 英語 公開
A. Kaneta; M. Funato; Y. Kawakami A. Kaneta; M. Funato; Y. Kawakami A. Kaneta; M. Funato; Y. Kawakami Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra Physical Review B - Condensed Matter and Materials Physics, 78, 12 Physical Review B - Condensed Matter and Materials Physics, 78, 12 Physical Review B - Condensed Matter and Materials Physics, 78, 12 2008/09 英語 公開
M. Funato; K. Hayashi; M. Ueda; Y. Kawakami; Y. Narukawa; T. Mukai M. Funato; K. Hayashi; M. Ueda; Y. Kawakami; Y. Narukawa; T. Mukai M. Funato; K. Hayashi; M. Ueda; Y. Kawakami; Y. Narukawa; T. Mukai Emission color tunable light-emitting diodes composed of InGaN multifacet quantum wells Emission color tunable light-emitting diodes composed of InGaN multifacet quantum wells Emission color tunable light-emitting diodes composed of InGaN multifacet quantum wells Applied Physics Letters, 93, 2 Applied Physics Letters, 93, 2 Applied Physics Letters, 93, 2 2008/07/14 英語 公開
R.G. Banal; M. Funato; Y. Kawakami R.G. Banal; M. Funato; Y. Kawakami R.G. Banal; M. Funato; Y. Kawakami Initial nucleation of AlN grown directly on sapphire substrates by metal-organic vapor phase epitaxy Initial nucleation of AlN grown directly on sapphire substrates by metal-organic vapor phase epitaxy Initial nucleation of AlN grown directly on sapphire substrates by metal-organic vapor phase epitaxy Applied Physics Letters, 92, 24 Applied Physics Letters, 92, 24 Applied Physics Letters, 92, 24 2008/06/16 英語 公開
M. Funato; Y. Kawakami M. Funato; Y. Kawakami M. Funato; Y. Kawakami Excitonic properties of polar, semipolar, and nonpolar InGaNGaN strained quantum wells with potential fluctuations Excitonic properties of polar, semipolar, and nonpolar InGaNGaN strained quantum wells with potential fluctuations Excitonic properties of polar, semipolar, and nonpolar InGaNGaN strained quantum wells with potential fluctuations Journal of Applied Physics, 103, 9 Journal of Applied Physics, 103, 9 Journal of Applied Physics, 103, 9 2008/05/01 英語 公開
M. Funato; T. Kondou; K. Hayashi; S. Nishiura; M. Ueda; Y. Kawakami; Y. Narukawa; T. Mukai M. Funato; T. Kondou; K. Hayashi; S. Nishiura; M. Ueda; Y. Kawakami; Y. Narukawa; T. Mukai M. Funato; T. Kondou; K. Hayashi; S. Nishiura; M. Ueda; Y. Kawakami; Y. Narukawa; T. Mukai Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting Applied Physics Express, 1, 1 Applied Physics Express, 1, 1 Applied Physics Express, 1, 1 2008/01 英語 公開
J. Park; N. Suganuma; Y. Kawakami J. Park; N. Suganuma; Y. Kawakami J. Park; N. Suganuma; Y. Kawakami Dual partial dye doping for chromaticity tuning and performance enhancement of white OLEDs Dual partial dye doping for chromaticity tuning and performance enhancement of white OLEDs Dual partial dye doping for chromaticity tuning and performance enhancement of white OLEDs IEEE/OSA Journal of Display Technology, 4, 1, 61-69 IEEE/OSA Journal of Display Technology, 4, 1, 61-69 IEEE/OSA Journal of Display Technology, 4, 1, 61-69 2008 英語 公開
R. Micheletto; D. Yamada; M. Allegrini; Y. Kawakami R. Micheletto; D. Yamada; M. Allegrini; Y. Kawakami R. Micheletto; D. Yamada; M. Allegrini; Y. Kawakami A polarization-modulation method for the near-field mapping of laterally grown InGaN samples A polarization-modulation method for the near-field mapping of laterally grown InGaN samples A polarization-modulation method for the near-field mapping of laterally grown InGaN samples Optics Express, 16, 10, 6889-6895 Optics Express, 16, 10, 6889-6895 Optics Express, 16, 10, 6889-6895 2008 英語 公開
R. Micheletto; K. Hamamoto; T. Fujii; Y. Kawakami R. Micheletto; K. Hamamoto; T. Fujii; Y. Kawakami R. Micheletto; K. Hamamoto; T. Fujii; Y. Kawakami Tenfold improved sensitivity using high refractive-index substrates for surface plasmon sensing Tenfold improved sensitivity using high refractive-index substrates for surface plasmon sensing Tenfold improved sensitivity using high refractive-index substrates for surface plasmon sensing Applied Physics Letters, 93, 17 Applied Physics Letters, 93, 17 Applied Physics Letters, 93, 17 2008 英語 公開
K. Kojima; M. Funato; Y. Kawakami; H. Braun; U. Schwarz; S. Nagahama; T. Mukai K. Kojima; M. Funato; Y. Kawakami; H. Braun; U. Schwarz; S. Nagahama; T. Mukai K. Kojima; M. Funato; Y. Kawakami; H. Braun; U. Schwarz; S. Nagahama; T. Mukai Inhomogeneously broadened optical gain spectra of InGaN quantum well laser diodes Inhomogeneously broadened optical gain spectra of InGaN quantum well laser diodes Inhomogeneously broadened optical gain spectra of InGaN quantum well laser diodes Physica Status Solidi (C) Current Topics in Solid State Physics, 5, 6, 2126-2128 Physica Status Solidi (C) Current Topics in Solid State Physics, 5, 6, 2126-2128 Physica Status Solidi (C) Current Topics in Solid State Physics, 5, 6, 2126-2128 2008 英語 公開
K. Kojima; H. Kamon; M. Funato; Y. Kawakami K. Kojima; H. Kamon; M. Funato; Y. Kawakami K. Kojima; H. Kamon; M. Funato; Y. Kawakami Theoretical investigations on anisotropic optical properties in semipolar and nonpolar InGaN quantum wells Theoretical investigations on anisotropic optical properties in semipolar and nonpolar InGaN quantum wells Theoretical investigations on anisotropic optical properties in semipolar and nonpolar InGaN quantum wells Physica Status Solidi (C) Current Topics in Solid State Physics, 5, 9, 3038-3041 Physica Status Solidi (C) Current Topics in Solid State Physics, 5, 9, 3038-3041 Physica Status Solidi (C) Current Topics in Solid State Physics, 5, 9, 3038-3041 2008 英語 公開
K. Okamoto; A. Scherer; Y. Kawakami K. Okamoto; A. Scherer; Y. Kawakami K. Okamoto; A. Scherer; Y. Kawakami Surface plasmon enhanced light emission from semiconductor materials Surface plasmon enhanced light emission from semiconductor materials Surface plasmon enhanced light emission from semiconductor materials Physica Status Solidi (C) Current Topics in Solid State Physics, 5, 9, 2822-2824 Physica Status Solidi (C) Current Topics in Solid State Physics, 5, 9, 2822-2824 Physica Status Solidi (C) Current Topics in Solid State Physics, 5, 9, 2822-2824 2008 英語 公開
Y. Kawakami; A. Kaneta; M. Funato Y. Kawakami; A. Kaneta; M. Funato Y. Kawakami; A. Kaneta; M. Funato Assessment and modification of recombination dynamics in In <sub>x</sub>Ga<sub>1-x</sub>N-based quantum wells Assessment and modification of recombination dynamics in In <sub>x</sub>Ga<sub>1-x</sub>N-based quantum wells Assessment and modification of recombination dynamics in In <sub>x</sub>Ga<sub>1-x</sub>N-based quantum wells Materials Science Forum, 590, 249-274 Materials Science Forum, 590, 249-274 Materials Science Forum, 590, 249-274 2008 英語 公開
M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai Semipolar InGaN/GaN Quantum Wells for Highly Functional Light Emitters Semipolar InGaN/GaN Quantum Wells for Highly Functional Light Emitters Semipolar InGaN/GaN Quantum Wells for Highly Functional Light Emitters Nitrides with Nonpolar Surfaces: Growth, Properties, and Devices, 385-411 Nitrides with Nonpolar Surfaces: Growth, Properties, and Devices, 385-411 Nitrides with Nonpolar Surfaces: Growth, Properties, and Devices, 385-411 2008 英語 公開
K. Kojima; M. Funato; Y. Kawakami; S. Masui; S. Nagahama; T. Mukai K. Kojima; M. Funato; Y. Kawakami; S. Masui; S. Nagahama; T. Mukai K. Kojima; M. Funato; Y. Kawakami; S. Masui; S. Nagahama; T. Mukai Stimulated emission at 474 nm from an InGaN laser diode structure grown on a (112-2) GaN substrate Stimulated emission at 474 nm from an InGaN laser diode structure grown on a (112-2) GaN substrate Stimulated emission at 474 nm from an InGaN laser diode structure grown on a (112-2) GaN substrate Applied Physics Letters, 91, 25 Applied Physics Letters, 91, 25 Applied Physics Letters, 91, 25 2007/12/17 英語 公開
M. Funato; S. Ujita; Y. Kawakami M. Funato; S. Ujita; Y. Kawakami M. Funato; S. Ujita; Y. Kawakami Metalorganic vapor phase epitaxy of GaN, InN, and AlGaN using 1,1-dimethylhydrazine as a nitrogen source Metalorganic vapor phase epitaxy of GaN, InN, and AlGaN using 1,1-dimethylhydrazine as a nitrogen source Metalorganic vapor phase epitaxy of GaN, InN, and AlGaN using 1,1-dimethylhydrazine as a nitrogen source Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 46, 10A, 6767-6772 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 46, 10A, 6767-6772 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 46, 10A, 6767-6772 2007/10 英語 公開
U.T. Schwarz; H. Braun; K. Kojima; Y. Kawakami; S. Nagahama; T. Mukai U.T. Schwarz; H. Braun; K. Kojima; Y. Kawakami; S. Nagahama; T. Mukai U.T. Schwarz; H. Braun; K. Kojima; Y. Kawakami; S. Nagahama; T. Mukai Interplay of built-in potential and piezoelectric field on carrier recombination in green light emitting InGaN quantum wells Interplay of built-in potential and piezoelectric field on carrier recombination in green light emitting InGaN quantum wells Interplay of built-in potential and piezoelectric field on carrier recombination in green light emitting InGaN quantum wells Applied Physics Letters, 91, 12 Applied Physics Letters, 91, 12 Applied Physics Letters, 91, 12 2007/09/17 英語 公開
Y. Kawakami; K. Nishizuka; D. Yamada; A. Kaneta; M. Funato; Y. Narukawa; T. Mukai Y. Kawakami; K. Nishizuka; D. Yamada; A. Kaneta; M. Funato; Y. Narukawa; T. Mukai Y. Kawakami; K. Nishizuka; D. Yamada; A. Kaneta; M. Funato; Y. Narukawa; T. Mukai Efficient green emission from (11 2- 2) InGaNGaN quantum wells on GaN microfacets probed by scanning near field optical microscopy Efficient green emission from (11 2- 2) InGaNGaN quantum wells on GaN microfacets probed by scanning near field optical microscopy Efficient green emission from (11 2- 2) InGaNGaN quantum wells on GaN microfacets probed by scanning near field optical microscopy Applied Physics Letters, 90, 26 Applied Physics Letters, 90, 26 Applied Physics Letters, 90, 26 2007/06/25 英語 公開
K. Kojima; U.T. Schwarz; M. Funato; Y. Kawakami; S. Nagahama; T. Mukai K. Kojima; U.T. Schwarz; M. Funato; Y. Kawakami; S. Nagahama; T. Mukai K. Kojima; U.T. Schwarz; M. Funato; Y. Kawakami; S. Nagahama; T. Mukai Optical gain spectra for near UV to aquamarine (Al,In)GaN laser diodes Optical gain spectra for near UV to aquamarine (Al,In)GaN laser diodes Optical gain spectra for near UV to aquamarine (Al,In)GaN laser diodes Optics Express, 15, 12, 7730-7736 Optics Express, 15, 12, 7730-7736 Optics Express, 15, 12, 7730-7736 2007/06/11 英語 公開
K. Kojima; M. Funato; Y. Kawakami; H. Braun; U.T. Schwarz; S. Nagahama; T. Mukai K. Kojima; M. Funato; Y. Kawakami; H. Braun; U.T. Schwarz; S. Nagahama; T. Mukai K. Kojima; M. Funato; Y. Kawakami; H. Braun; U.T. Schwarz; S. Nagahama; T. Mukai Comparison between optical gain spectra of in <sub>x</sub>Ga <sub>1-x</sub>N/In <sub>0.02</sub>Ga <sub>0.98</sub>N laser diodes emitting at 404 nm and 470 nm Comparison between optical gain spectra of in <sub>x</sub>Ga <sub>1-x</sub>N/In <sub>0.02</sub>Ga <sub>0.98</sub>N laser diodes emitting at 404 nm and 470 nm Comparison between optical gain spectra of in <sub>x</sub>Ga <sub>1-x</sub>N/In <sub>0.02</sub>Ga <sub>0.98</sub>N laser diodes emitting at 404 nm and 470 nm Physica Status Solidi (A) Applications and Materials Science, 204, 6, 2108-2111 Physica Status Solidi (A) Applications and Materials Science, 204, 6, 2108-2111 Physica Status Solidi (A) Applications and Materials Science, 204, 6, 2108-2111 2007/06 英語 公開
M. Ueda; T. Kondou; K. Hayashi; M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai M. Ueda; T. Kondou; K. Hayashi; M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai M. Ueda; T. Kondou; K. Hayashi; M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai Additive color mixture of emission from InGaNGaN quantum wells on structure-controlled GaN microfacets Additive color mixture of emission from InGaNGaN quantum wells on structure-controlled GaN microfacets Additive color mixture of emission from InGaNGaN quantum wells on structure-controlled GaN microfacets Applied Physics Letters, 90, 17 Applied Physics Letters, 90, 17 Applied Physics Letters, 90, 17 2007/04/23 英語 公開
M. Ueda; K. Hayashi; T. Kondou; M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai M. Ueda; K. Hayashi; T. Kondou; M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai M. Ueda; K. Hayashi; T. Kondou; M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai Mechanisms of metalorganic vapor phase epitaxy of InGaN quantum wells on GaN microfacet structures Mechanisms of metalorganic vapor phase epitaxy of InGaN quantum wells on GaN microfacet structures Mechanisms of metalorganic vapor phase epitaxy of InGaN quantum wells on GaN microfacet structures Physica Status Solidi (C) Current Topics in Solid State Physics, 4, 7, 2826-2829 Physica Status Solidi (C) Current Topics in Solid State Physics, 4, 7, 2826-2829 Physica Status Solidi (C) Current Topics in Solid State Physics, 4, 7, 2826-2829 2007 英語 公開
R. Piga; R. Micheletto; Y. Kawakami R. Piga; R. Micheletto; Y. Kawakami R. Piga; R. Micheletto; Y. Kawakami Acoustical nanometre-scale vibrations of live cells detected by a near-field optical setup Acoustical nanometre-scale vibrations of live cells detected by a near-field optical setup Acoustical nanometre-scale vibrations of live cells detected by a near-field optical setup Optics Express, 15, 9, 5589-5594 Optics Express, 15, 9, 5589-5594 Optics Express, 15, 9, 5589-5594 2007 英語 公開
R. Micheletto; M. Allegrini; Y. Kawakami R. Micheletto; M. Allegrini; Y. Kawakami R. Micheletto; M. Allegrini; Y. Kawakami Artefacts in polarization modulation scanning near-field optical microscopes Artefacts in polarization modulation scanning near-field optical microscopes Artefacts in polarization modulation scanning near-field optical microscopes Journal of Optics A: Pure and Applied Optics, 9, 5 Journal of Optics A: Pure and Applied Optics, 9, 5 Journal of Optics A: Pure and Applied Optics, 9, 5 2007 英語 公開
K. Kojima; M. Ueda; M. Funato; Y. Kawakami K. Kojima; M. Ueda; M. Funato; Y. Kawakami K. Kojima; M. Ueda; M. Funato; Y. Kawakami Photoluminescence and optical reflectance investigation of semipolar and nonpolar GaN Photoluminescence and optical reflectance investigation of semipolar and nonpolar GaN Photoluminescence and optical reflectance investigation of semipolar and nonpolar GaN Physica Status Solidi (B) Basic Research, 244, 6, 1853-1856 Physica Status Solidi (B) Basic Research, 244, 6, 1853-1856 Physica Status Solidi (B) Basic Research, 244, 6, 1853-1856 2007 英語 公開
R. Micheletto; Y. Kawakami; K. Hamamoto R. Micheletto; Y. Kawakami; K. Hamamoto R. Micheletto; Y. Kawakami; K. Hamamoto Optical nanometer-scale sensing of mechanical vibrations with a planar glass at critical angle Optical nanometer-scale sensing of mechanical vibrations with a planar glass at critical angle Optical nanometer-scale sensing of mechanical vibrations with a planar glass at critical angle Applied Physics Letters, 90, 24 Applied Physics Letters, 90, 24 Applied Physics Letters, 90, 24 2007 英語 公開
K. Okamoto; I. Niki; A. Shvartser; G. Maltezos; Y. Narukawa; T. Mukai; Y. Kawakami; A. Scherer K. Okamoto; I. Niki; A. Shvartser; G. Maltezos; Y. Narukawa; T. Mukai; Y. Kawakami; A. Scherer K. Okamoto; I. Niki; A. Shvartser; G. Maltezos; Y. Narukawa; T. Mukai; Y. Kawakami; A. Scherer Surface plasmon enhanced bright light emission from InGaN/GaN Surface plasmon enhanced bright light emission from InGaN/GaN Surface plasmon enhanced bright light emission from InGaN/GaN Physica Status Solidi (A) Applications and Materials Science, 204, 6, 2103-2107 Physica Status Solidi (A) Applications and Materials Science, 204, 6, 2103-2107 Physica Status Solidi (A) Applications and Materials Science, 204, 6, 2103-2107 2007 英語 公開
J. Park; Y. Kawakami; S.-H. Park J. Park; Y. Kawakami; S.-H. Park J. Park; Y. Kawakami; S.-H. Park Numerical analysis of multilayer organic light-emitting diodes Numerical analysis of multilayer organic light-emitting diodes Numerical analysis of multilayer organic light-emitting diodes Journal of Lightwave Technology, 25, 9, 2828-2836 Journal of Lightwave Technology, 25, 9, 2828-2836 Journal of Lightwave Technology, 25, 9, 2828-2836 2007 英語 公開
Y. Kawakami; S. Kamiyama; G.-I. Hatakoshi; T. Mukai; Y. Narukawa; I. Nomura; K. Kishino; H. Hirayama; M. Kawasaki; A. Ohtomo; H. Okushi; Y. Taniyasu; M. Kasu; T. Makimoto; A. Hirano; K. Kohmoto; H. Kanie; N. Shibata; T. Nakamura; K. Tadatomo; M. Kuramoto; T. Yanamoto; H. Amano; K. Akimoto Y. Kawakami; S. Kamiyama; G.-I. Hatakoshi; T. Mukai; Y. Narukawa; I. Nomura; K. Kishino; H. Hirayama; M. Kawasaki; A. Ohtomo; H. Okushi; Y. Taniyasu; M. Kasu; T. Makimoto; A. Hirano; K. Kohmoto; H. Kanie; N. Shibata; T. Nakamura; K. Tadatomo; M. Kuramoto; T. Yanamoto; H. Amano; K. Akimoto Y. Kawakami; S. Kamiyama; G.-I. Hatakoshi; T. Mukai; Y. Narukawa; I. Nomura; K. Kishino; H. Hirayama; M. Kawasaki; A. Ohtomo; H. Okushi; Y. Taniyasu; M. Kasu; T. Makimoto; A. Hirano; K. Kohmoto; H. Kanie; N. Shibata; T. Nakamura; K. Tadatomo; M. Kuramoto; T. Yanamoto; H. Amano; K. Akimoto Photonic devices Photonic devices Photonic devices Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices, 97-230 Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices, 97-230 Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices, 97-230 2007 英語 公開
K. Takahashi; A. Yoshikawa; A. Sandhu; Y. Ishitani; Y. Kawakami K. Takahashi; A. Yoshikawa; A. Sandhu; Y. Ishitani; Y. Kawakami K. Takahashi; A. Yoshikawa; A. Sandhu; Y. Ishitani; Y. Kawakami Wide bandgap semiconductors: Fundamental properties and modern photonic and electronic devices Wide bandgap semiconductors: Fundamental properties and modern photonic and electronic devices Wide bandgap semiconductors: Fundamental properties and modern photonic and electronic devices Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices, 1-460 Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices, 1-460 Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices, 1-460 2007 英語 公開
S. Yoshida; T. Ito; A. Hiraki; H. Saito; S. Fujita; Y. Ishitani; S. Sakai; T. Miyajima; Y. Yamada; Y. Kawakami; I. Suemune; K. Hiramatsu; H. Kawanishi; H. Amano; H. Okumura; T. Mizutani S. Yoshida; T. Ito; A. Hiraki; H. Saito; S. Fujita; Y. Ishitani; S. Sakai; T. Miyajima; Y. Yamada; Y. Kawakami; I. Suemune; K. Hiramatsu; H. Kawanishi; H. Amano; H. Okumura; T. Mizutani S. Yoshida; T. Ito; A. Hiraki; H. Saito; S. Fujita; Y. Ishitani; S. Sakai; T. Miyajima; Y. Yamada; Y. Kawakami; I. Suemune; K. Hiramatsu; H. Kawanishi; H. Amano; H. Okumura; T. Mizutani Fundamental properties of wide bandgap semiconductors Fundamental properties of wide bandgap semiconductors Fundamental properties of wide bandgap semiconductors Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices, 25-96 Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices, 25-96 Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices, 25-96 2007 英語 公開
K. Kojima; M. Funato; Y. Kawakami; S. Nagahama; T. Mukai; H. Braun; U.T. Schwarz K. Kojima; M. Funato; Y. Kawakami; S. Nagahama; T. Mukai; H. Braun; U.T. Schwarz K. Kojima; M. Funato; Y. Kawakami; S. Nagahama; T. Mukai; H. Braun; U.T. Schwarz Gain suppression phenomena observed in In<sub>x</sub>Ga<sub>1-x</sub> N quantum well laser diodes emitting at 470 nm Gain suppression phenomena observed in In<sub>x</sub>Ga<sub>1-x</sub> N quantum well laser diodes emitting at 470 nm Gain suppression phenomena observed in In<sub>x</sub>Ga<sub>1-x</sub> N quantum well laser diodes emitting at 470 nm Applied Physics Letters, 89, 24 Applied Physics Letters, 89, 24 Applied Physics Letters, 89, 24 2006/12/11 英語 公開
M. Ueda; K. Kojima; M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai M. Ueda; K. Kojima; M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai M. Ueda; K. Kojima; M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai Epitaxial growth and optical properties of semipolar (112̄2) GaN and InGaN/GaN quantum wells on GaN bulk substrates Epitaxial growth and optical properties of semipolar (112̄2) GaN and InGaN/GaN quantum wells on GaN bulk substrates Epitaxial growth and optical properties of semipolar (112̄2) GaN and InGaN/GaN quantum wells on GaN bulk substrates Applied Physics Letters, 89, 21 Applied Physics Letters, 89, 21 Applied Physics Letters, 89, 21 2006/11/20 英語 公開
Y. Kawakami; S. Suzuki; A. Kaneta; M. Funato; A. Kikuchi; K. Kishino Y. Kawakami; S. Suzuki; A. Kaneta; M. Funato; A. Kikuchi; K. Kishino Y. Kawakami; S. Suzuki; A. Kaneta; M. Funato; A. Kikuchi; K. Kishino Origin of high oscillator strength in green-emitting InGaN/GaN nanocolumns Origin of high oscillator strength in green-emitting InGaN/GaN nanocolumns Origin of high oscillator strength in green-emitting InGaN/GaN nanocolumns Applied Physics Letters, 89, 16 Applied Physics Letters, 89, 16 Applied Physics Letters, 89, 16 2006/10/16 英語 公開
K. Kojima; M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai K. Kojima; M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai K. Kojima; M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai Suppression mechanism of optical gain formation in In<sub>x</sub>Ga<sub>1-x</sub>N quantum well structures due to localized carriers Suppression mechanism of optical gain formation in In<sub>x</sub>Ga<sub>1-x</sub>N quantum well structures due to localized carriers Suppression mechanism of optical gain formation in In<sub>x</sub>Ga<sub>1-x</sub>N quantum well structures due to localized carriers Solid State Communications, 140, 3-4, 182-184 Solid State Communications, 140, 3-4, 182-184 Solid State Communications, 140, 3-4, 182-184 2006/10 英語 公開
J. Park; A. Kaneta; M. Funato; Y. Kawakami J. Park; A. Kaneta; M. Funato; Y. Kawakami J. Park; A. Kaneta; M. Funato; Y. Kawakami Carrier transport and optical properties of InGaN SQW with embedded AlGaN δ-layer Carrier transport and optical properties of InGaN SQW with embedded AlGaN δ-layer Carrier transport and optical properties of InGaN SQW with embedded AlGaN δ-layer IEEE Journal of Quantum Electronics, 42, 9-10, 1023-1030 IEEE Journal of Quantum Electronics, 42, 9-10, 1023-1030 IEEE Journal of Quantum Electronics, 42, 9-10, 1023-1030 2006/09 英語 公開
M. Funato; T. Kotani; T. Kondou; Y. Kawakami; Y. Narukawa; T. Mukai M. Funato; T. Kotani; T. Kondou; Y. Kawakami; Y. Narukawa; T. Mukai M. Funato; T. Kotani; T. Kondou; Y. Kawakami; Y. Narukawa; T. Mukai Tailored emission color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors Tailored emission color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors Tailored emission color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors Applied Physics Letters, 88, 26 Applied Physics Letters, 88, 26 Applied Physics Letters, 88, 26 2006/06/26 英語 公開
M. Funato; K. Omae; Y. Kawakami; Sg. Fujita; C. Bradford; A. Balocchi; K.A. Prior; B.C. Cavenett M. Funato; K. Omae; Y. Kawakami; Sg. Fujita; C. Bradford; A. Balocchi; K.A. Prior; B.C. Cavenett M. Funato; K. Omae; Y. Kawakami; Sg. Fujita; C. Bradford; A. Balocchi; K.A. Prior; B.C. Cavenett Optical properties of CdSe MgS monolayer quantum wells and self-assembled quantum dots Optical properties of CdSe MgS monolayer quantum wells and self-assembled quantum dots Optical properties of CdSe MgS monolayer quantum wells and self-assembled quantum dots Physical Review B - Condensed Matter and Materials Physics, 73, 24 Physical Review B - Condensed Matter and Materials Physics, 73, 24 Physical Review B - Condensed Matter and Materials Physics, 73, 24 2006/06 英語 公開
J. Park; Y. Kawakami J. Park; Y. Kawakami J. Park; Y. Kawakami Photoluminescence property of InGaN single quantum well with embedded AlGaN δ layer Photoluminescence property of InGaN single quantum well with embedded AlGaN δ layer Photoluminescence property of InGaN single quantum well with embedded AlGaN δ layer Applied Physics Letters, 88, 20 Applied Physics Letters, 88, 20 Applied Physics Letters, 88, 20 2006/05/15 英語 公開
A. Ambrosio; O. Fenwick; F. Cacialli; R. Micheletto; Y. Kawakami; P.G. Gucciardi; D.J. Kang; M. Allegrini A. Ambrosio; O. Fenwick; F. Cacialli; R. Micheletto; Y. Kawakami; P.G. Gucciardi; D.J. Kang; M. Allegrini A. Ambrosio; O. Fenwick; F. Cacialli; R. Micheletto; Y. Kawakami; P.G. Gucciardi; D.J. Kang; M. Allegrini Shape dependent thermal effects in apertured fiber probes for scanning near-field optical microscopy Shape dependent thermal effects in apertured fiber probes for scanning near-field optical microscopy Shape dependent thermal effects in apertured fiber probes for scanning near-field optical microscopy Journal of Applied Physics, 99, 8 Journal of Applied Physics, 99, 8 Journal of Applied Physics, 99, 8 2006/04/15 英語 公開
J. Park; Y. Kawakami J. Park; Y. Kawakami J. Park; Y. Kawakami Time-domain models for the performance simulation of semiconductor optical amplifiers Time-domain models for the performance simulation of semiconductor optical amplifiers Time-domain models for the performance simulation of semiconductor optical amplifiers Optics Express, 14, 7, 2956-2968 Optics Express, 14, 7, 2956-2968 Optics Express, 14, 7, 2956-2968 2006/04/03 英語 公開
K. Hamamoto; R. Micheletto; M. Oyama; A. Ali Umar; S. Kawai; Y. Kawakami K. Hamamoto; R. Micheletto; M. Oyama; A. Ali Umar; S. Kawai; Y. Kawakami K. Hamamoto; R. Micheletto; M. Oyama; A. Ali Umar; S. Kawai; Y. Kawakami An original planar multireflection system for sensing using the local surface plasmon resonance of gold nanospheres An original planar multireflection system for sensing using the local surface plasmon resonance of gold nanospheres An original planar multireflection system for sensing using the local surface plasmon resonance of gold nanospheres Journal of Optics A: Pure and Applied Optics, 8, 3, 268-271 Journal of Optics A: Pure and Applied Optics, 8, 3, 268-271 Journal of Optics A: Pure and Applied Optics, 8, 3, 268-271 2006/03 英語 公開
R. Micheletto; M. Abiko; A. Kaneta; Y. Kawakami; Y. Narukawa; T. Mukai R. Micheletto; M. Abiko; A. Kaneta; Y. Kawakami; Y. Narukawa; T. Mukai R. Micheletto; M. Abiko; A. Kaneta; Y. Kawakami; Y. Narukawa; T. Mukai Observation of optical instabilities in the photoluminescence of InGaN single quantum well Observation of optical instabilities in the photoluminescence of InGaN single quantum well Observation of optical instabilities in the photoluminescence of InGaN single quantum well Applied Physics Letters, 88, 6 Applied Physics Letters, 88, 6 Applied Physics Letters, 88, 6 2006/02/06 英語 公開
R. Micheletto; M. Yokokawa; Y. Ding; D. Hobara; T. Kakiuchi; Y. Kawakami R. Micheletto; M. Yokokawa; Y. Ding; D. Hobara; T. Kakiuchi; Y. Kawakami R. Micheletto; M. Yokokawa; Y. Ding; D. Hobara; T. Kakiuchi; Y. Kawakami Observation of a nanometer size confined transient phenomenon at the gold STM tip interface under UV illumination Observation of a nanometer size confined transient phenomenon at the gold STM tip interface under UV illumination Observation of a nanometer size confined transient phenomenon at the gold STM tip interface under UV illumination Colloids and Surfaces A: Physicochemical and Engineering Aspects, 273, 1-3, 189-192 Colloids and Surfaces A: Physicochemical and Engineering Aspects, 273, 1-3, 189-192 Colloids and Surfaces A: Physicochemical and Engineering Aspects, 273, 1-3, 189-192 2006/02/01 英語 公開
R. Micheletto; Y. Kawakami; K. Hamamoto; S. Kawai R. Micheletto; Y. Kawakami; K. Hamamoto; S. Kawai R. Micheletto; Y. Kawakami; K. Hamamoto; S. Kawai Index-of-refraction sensors: Virtually unlimited sensing power at the critical angle Index-of-refraction sensors: Virtually unlimited sensing power at the critical angle Index-of-refraction sensors: Virtually unlimited sensing power at the critical angle Optics Letters, 31, 2, 205-207 Optics Letters, 31, 2, 205-207 Optics Letters, 31, 2, 205-207 2006/01/15 英語 公開
R. Micheletto; M. Yokokawa; S. Okazakaki; Y. Kawakami R. Micheletto; M. Yokokawa; S. Okazakaki; Y. Kawakami R. Micheletto; M. Yokokawa; S. Okazakaki; Y. Kawakami Fabrication of an atomic resolution low cost STM-SNOM hybrid probe Fabrication of an atomic resolution low cost STM-SNOM hybrid probe Fabrication of an atomic resolution low cost STM-SNOM hybrid probe Journal of Nanoscience and Nanotechnology, 6, 1, 72-76 Journal of Nanoscience and Nanotechnology, 6, 1, 72-76 Journal of Nanoscience and Nanotechnology, 6, 1, 72-76 2006/01 英語 公開
M. Funato; M. Ueda; Y. Kawakami; Y. Narukawa; T. Kosugi; M. Takahashi; T. Mukai M. Funato; M. Ueda; Y. Kawakami; Y. Narukawa; T. Kosugi; M. Takahashi; T. Mukai M. Funato; M. Ueda; Y. Kawakami; Y. Narukawa; T. Kosugi; M. Takahashi; T. Mukai Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {1122} GaN bulk substrates Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {1122} GaN bulk substrates Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {1122} GaN bulk substrates Japanese Journal of Applied Physics, Part 2: Letters, 45, 24-28, L659-L662 Japanese Journal of Applied Physics, Part 2: Letters, 45, 24-28, L659-L662 Japanese Journal of Applied Physics, Part 2: Letters, 45, 24-28, L659-L662 2006 英語 公開
A. Kaneta; M. Funato; Y. Narukawa; T. Mukai; Y. Kawakami A. Kaneta; M. Funato; Y. Narukawa; T. Mukai; Y. Kawakami A. Kaneta; M. Funato; Y. Narukawa; T. Mukai; Y. Kawakami Direct correlation between nonradiative recombination centers and threading dislocations in InGaN quantum wells by near-field photoluminescence spectroscopy Direct correlation between nonradiative recombination centers and threading dislocations in InGaN quantum wells by near-field photoluminescence spectroscopy Direct correlation between nonradiative recombination centers and threading dislocations in InGaN quantum wells by near-field photoluminescence spectroscopy Physica Status Solidi (C) Current Topics in Solid State Physics, 3, 1897-1901 Physica Status Solidi (C) Current Topics in Solid State Physics, 3, 1897-1901 Physica Status Solidi (C) Current Topics in Solid State Physics, 3, 1897-1901 2006 英語 公開
K. Omae; T. Flissikowski; P. Misra; O. Brandt; H.T. Grahn; K. Kojima; Y. Kawakami K. Omae; T. Flissikowski; P. Misra; O. Brandt; H.T. Grahn; K. Kojima; Y. Kawakami K. Omae; T. Flissikowski; P. Misra; O. Brandt; H.T. Grahn; K. Kojima; Y. Kawakami Dynamic polarization rotation in pump-and-probe transients of anisotropically strained M-plane GaN films on LiAlO<sub>2</sub> Dynamic polarization rotation in pump-and-probe transients of anisotropically strained M-plane GaN films on LiAlO<sub>2</sub> Dynamic polarization rotation in pump-and-probe transients of anisotropically strained M-plane GaN films on LiAlO<sub>2</sub> Physica Status Solidi (C) Current Topics in Solid State Physics, 3, 1862-1865 Physica Status Solidi (C) Current Topics in Solid State Physics, 3, 1862-1865 Physica Status Solidi (C) Current Topics in Solid State Physics, 3, 1862-1865 2006 英語 公開
R. Micheletto; Y. Kawakami; C. Manfredotti; Y. Garino; M. Allegrini R. Micheletto; Y. Kawakami; C. Manfredotti; Y. Garino; M. Allegrini R. Micheletto; Y. Kawakami; C. Manfredotti; Y. Garino; M. Allegrini Dichroism of diamond grains by a polarization modulated near field optical setup Dichroism of diamond grains by a polarization modulated near field optical setup Dichroism of diamond grains by a polarization modulated near field optical setup Applied Physics Letters, 89, 12 Applied Physics Letters, 89, 12 Applied Physics Letters, 89, 12 2006 英語 公開
J. Park; Y. Kawakami; X. Li; W.-P. Huang J. Park; Y. Kawakami; X. Li; W.-P. Huang J. Park; Y. Kawakami; X. Li; W.-P. Huang Comparative analysis of the effects of internal lasing oscillation and external light injection on semiconductor optical amplifier performance Comparative analysis of the effects of internal lasing oscillation and external light injection on semiconductor optical amplifier performance Comparative analysis of the effects of internal lasing oscillation and external light injection on semiconductor optical amplifier performance Optics Communications, 267, 2, 379-387 Optics Communications, 267, 2, 379-387 Optics Communications, 267, 2, 379-387 2006 英語 公開
J. Park; Y. Kawakami J. Park; Y. Kawakami J. Park; Y. Kawakami Temperature-dependent dynamic behaviors of organic light-emitting diode Temperature-dependent dynamic behaviors of organic light-emitting diode Temperature-dependent dynamic behaviors of organic light-emitting diode IEEE/OSA Journal of Display Technology, 2, 4, 333-340 IEEE/OSA Journal of Display Technology, 2, 4, 333-340 IEEE/OSA Journal of Display Technology, 2, 4, 333-340 2006 英語 公開
A. Sasaki; S.-I. Shibakawa; Y. Kawakami; K. Nishizuka; Y. Narukawa; T. Mukai A. Sasaki; S.-I. Shibakawa; Y. Kawakami; K. Nishizuka; Y. Narukawa; T. Mukai A. Sasaki; S.-I. Shibakawa; Y. Kawakami; K. Nishizuka; Y. Narukawa; T. Mukai Equation for internal quantum efficiency and its temperature dependence of luminescence, and application to in<sub>x</sub>Ga<sub>1-x</sub>N/GaN multiple quantum wells Equation for internal quantum efficiency and its temperature dependence of luminescence, and application to in<sub>x</sub>Ga<sub>1-x</sub>N/GaN multiple quantum wells Equation for internal quantum efficiency and its temperature dependence of luminescence, and application to in<sub>x</sub>Ga<sub>1-x</sub>N/GaN multiple quantum wells Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 45, 11, 8719-8723 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 45, 11, 8719-8723 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 45, 11, 8719-8723 2006 英語 公開
K. Nishizuka; M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai K. Nishizuka; M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai K. Nishizuka; M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai Efficient rainbow color luminescence from In<sub>x</sub> Ga<sub>1-x</sub>N single quantum wells fabricated on {11 2̄ 2} microfacets Efficient rainbow color luminescence from In<sub>x</sub> Ga<sub>1-x</sub>N single quantum wells fabricated on {11 2̄ 2} microfacets Efficient rainbow color luminescence from In<sub>x</sub> Ga<sub>1-x</sub>N single quantum wells fabricated on {11 2̄ 2} microfacets Applied Physics Letters, 87, 23 Applied Physics Letters, 87, 23 Applied Physics Letters, 87, 23 2005/12/05 英語 公開
K. Okamoto; A. Scherer; Y. Kawakami K. Okamoto; A. Scherer; Y. Kawakami K. Okamoto; A. Scherer; Y. Kawakami Near-field scanning optical microscopic transient lens for carrier dynamics study in InGaNGaN Near-field scanning optical microscopic transient lens for carrier dynamics study in InGaNGaN Near-field scanning optical microscopic transient lens for carrier dynamics study in InGaNGaN Applied Physics Letters, 87, 16 Applied Physics Letters, 87, 16 Applied Physics Letters, 87, 16 2005/10/17 英語 公開
K. Okamoto; A. Kaneta; Y. Kawakami; S. Fujita; J. Choi; M. Terazima; T. Mukai K. Okamoto; A. Kaneta; Y. Kawakami; S. Fujita; J. Choi; M. Terazima; T. Mukai K. Okamoto; A. Kaneta; Y. Kawakami; S. Fujita; J. Choi; M. Terazima; T. Mukai Confocal microphotoluminescence of InGaN-based light-emitting diodes Confocal microphotoluminescence of InGaN-based light-emitting diodes Confocal microphotoluminescence of InGaN-based light-emitting diodes Journal of Applied Physics, 98, 6 Journal of Applied Physics, 98, 6 Journal of Applied Physics, 98, 6 2005/09/15 英語 公開
R. Piga; R. Micheletto; Y. Kawakami R. Piga; R. Micheletto; Y. Kawakami R. Piga; R. Micheletto; Y. Kawakami Nano-probing of the membrane dynamics of rat pheochromocytoma by near-field optics Nano-probing of the membrane dynamics of rat pheochromocytoma by near-field optics Nano-probing of the membrane dynamics of rat pheochromocytoma by near-field optics Biophysical Chemistry, 117, 2, 141-146 Biophysical Chemistry, 117, 2, 141-146 Biophysical Chemistry, 117, 2, 141-146 2005/09/01 英語 公開
K. Okamoto; I. Niki; A. Scherer; Y. Narukawa; T. Mukai; Y. Kawakami K. Okamoto; I. Niki; A. Scherer; Y. Narukawa; T. Mukai; Y. Kawakami K. Okamoto; I. Niki; A. Scherer; Y. Narukawa; T. Mukai; Y. Kawakami Surface plasmon enhanced spontaneous emission rate of InGaNGaN quantum wells probed by time-resolved photoluminescence spectroscopy Surface plasmon enhanced spontaneous emission rate of InGaNGaN quantum wells probed by time-resolved photoluminescence spectroscopy Surface plasmon enhanced spontaneous emission rate of InGaNGaN quantum wells probed by time-resolved photoluminescence spectroscopy Applied Physics Letters, 87, 7 Applied Physics Letters, 87, 7 Applied Physics Letters, 87, 7 2005/08/15 英語 公開
P.G. Gucciardi; M. Allegrini; R. Micheletto; T. Kotani; T. Hatada; Y. Kawakami P.G. Gucciardi; M. Allegrini; R. Micheletto; T. Kotani; T. Hatada; Y. Kawakami P.G. Gucciardi; M. Allegrini; R. Micheletto; T. Kotani; T. Hatada; Y. Kawakami Waveguide behavior of Distributed Bragg Reflectors probed by polarization-modulated near-field optical microscopy Waveguide behavior of Distributed Bragg Reflectors probed by polarization-modulated near-field optical microscopy Waveguide behavior of Distributed Bragg Reflectors probed by polarization-modulated near-field optical microscopy Journal of the Korean Physical Society, 47, S101-S108 Journal of the Korean Physical Society, 47, S101-S108 Journal of the Korean Physical Society, 47, S101-S108 2005/08 英語 公開
K. Omae; T. Flissikowski; P. Misra; O. Brandt; H.T. Grahn; K. Kojima; Y. Kawakami K. Omae; T. Flissikowski; P. Misra; O. Brandt; H.T. Grahn; K. Kojima; Y. Kawakami K. Omae; T. Flissikowski; P. Misra; O. Brandt; H.T. Grahn; K. Kojima; Y. Kawakami Dynamic polarization filtering in anisotropically strained M -plane GaN films Dynamic polarization filtering in anisotropically strained M -plane GaN films Dynamic polarization filtering in anisotropically strained M -plane GaN films Applied Physics Letters, 86, 19 Applied Physics Letters, 86, 19 Applied Physics Letters, 86, 19 2005/05/09 英語 公開
R. Micheletto; K. Hamamoto; S. Kawai; Y. Kawakami R. Micheletto; K. Hamamoto; S. Kawai; Y. Kawakami R. Micheletto; K. Hamamoto; S. Kawai; Y. Kawakami Modeling and test of fiber-optics fast SPR sensor for biological investigation Modeling and test of fiber-optics fast SPR sensor for biological investigation Modeling and test of fiber-optics fast SPR sensor for biological investigation Sensors and Actuators, A: Physical, 119, 2, 283-290 Sensors and Actuators, A: Physical, 119, 2, 283-290 Sensors and Actuators, A: Physical, 119, 2, 283-290 2005/04/13 英語 公開
R. Micheletto; J. Matsui; M. Oyama; K. El-Hami; K. Matsushige; Y. Kawakami R. Micheletto; J. Matsui; M. Oyama; K. El-Hami; K. Matsushige; Y. Kawakami R. Micheletto; J. Matsui; M. Oyama; K. El-Hami; K. Matsushige; Y. Kawakami Magnetic induced vertical crystal growth of perylene cation radicals on ITO glass surface Magnetic induced vertical crystal growth of perylene cation radicals on ITO glass surface Magnetic induced vertical crystal growth of perylene cation radicals on ITO glass surface Applied Surface Science, 242, 1-2, 129-133 Applied Surface Science, 242, 1-2, 129-133 Applied Surface Science, 242, 1-2, 129-133 2005/03/31 英語 公開
A. Kaneta; D. Yamada; G. Marutsuki; Y. Narukawa; T. Mukai; Y. Kawakami A. Kaneta; D. Yamada; G. Marutsuki; Y. Narukawa; T. Mukai; Y. Kawakami A. Kaneta; D. Yamada; G. Marutsuki; Y. Narukawa; T. Mukai; Y. Kawakami Near-field photoluminescence study in violet light emitting InGaN single quantum well structures Near-field photoluminescence study in violet light emitting InGaN single quantum well structures Near-field photoluminescence study in violet light emitting InGaN single quantum well structures Physica Status Solidi C: Conferences, 2, 7, 2728-2731 Physica Status Solidi C: Conferences, 2, 7, 2728-2731 Physica Status Solidi C: Conferences, 2, 7, 2728-2731 2005 英語 公開
H. Saito; T. Morioka; O. Kawasaki; T. Yuasa; M. Taneya; S. Tanabe; Y. Kawakami; M. Funato; S. Fujita; M. Harada H. Saito; T. Morioka; O. Kawasaki; T. Yuasa; M. Taneya; S. Tanabe; Y. Kawakami; M. Funato; S. Fujita; M. Harada Samarium-doped red phosphor for InGaN-based optical device pumping Samarium-doped red phosphor for InGaN-based optical device pumping Shapu Giho/Sharp Technical Journal, 91, 50-53 Shapu Giho/Sharp Technical Journal, 91, 50-53 , 91, 50-53 2005 日本語 公開
Y.K. Zhou; M.S. Kim; X.J. Li; S. Kimura; A. Kaneta; Y. Kawakami; Sg. Fujita; S. Emura; S. Hasegawa; H. Asahi Y.K. Zhou; M.S. Kim; X.J. Li; S. Kimura; A. Kaneta; Y. Kawakami; Sg. Fujita; S. Emura; S. Hasegawa; H. Asahi Y.K. Zhou; M.S. Kim; X.J. Li; S. Kimura; A. Kaneta; Y. Kawakami; Sg. Fujita; S. Emura; S. Hasegawa; H. Asahi Optical properties of GaN-based magnetic semiconductors Optical properties of GaN-based magnetic semiconductors Optical properties of GaN-based magnetic semiconductors Journal of Physics Condensed Matter, 16, 48, S5743-S5748 Journal of Physics Condensed Matter, 16, 48, S5743-S5748 Journal of Physics Condensed Matter, 16, 48, S5743-S5748 2004/12/08 英語 公開
K. Nishizuka; M. Funato; Y. Kawakami; Sg. Fujita; Y. Narukawa; T. Mukai K. Nishizuka; M. Funato; Y. Kawakami; Sg. Fujita; Y. Narukawa; T. Mukai K. Nishizuka; M. Funato; Y. Kawakami; Sg. Fujita; Y. Narukawa; T. Mukai Efficient radiative recombination from «112̄2» -oriented In<sub>x</sub>Ga<sub>1-x</sub>N multiple quantum wells fabricated by the regrowth technique Efficient radiative recombination from «112̄2» -oriented In<sub>x</sub>Ga<sub>1-x</sub>N multiple quantum wells fabricated by the regrowth technique Efficient radiative recombination from «112̄2» -oriented In<sub>x</sub>Ga<sub>1-x</sub>N multiple quantum wells fabricated by the regrowth technique Applied Physics Letters, 85, 15, 3122-3124 Applied Physics Letters, 85, 15, 3122-3124 Applied Physics Letters, 85, 15, 3122-3124 2004/10/11 英語 公開
K. Kojima; A. Shikanai; K. Omae; M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai; Sg. Fujita K. Kojima; A. Shikanai; K. Omae; M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai; Sg. Fujita K. Kojima; A. Shikanai; K. Omae; M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai; Sg. Fujita Optically pumped lasing and gain formation properties in blue In <sub>x</sub>Ga<sub>1-x</sub>N MQWs Optically pumped lasing and gain formation properties in blue In <sub>x</sub>Ga<sub>1-x</sub>N MQWs Optically pumped lasing and gain formation properties in blue In <sub>x</sub>Ga<sub>1-x</sub>N MQWs Physica Status Solidi (B) Basic Research, 241, 12, 2676-2680 Physica Status Solidi (B) Basic Research, 241, 12, 2676-2680 Physica Status Solidi (B) Basic Research, 241, 12, 2676-2680 2004/10 英語 公開
R. Micheletto; N. Yoshimatsu; A. Kaneta; Y. Kawakami; S. Fujita R. Micheletto; N. Yoshimatsu; A. Kaneta; Y. Kawakami; S. Fujita R. Micheletto; N. Yoshimatsu; A. Kaneta; Y. Kawakami; S. Fujita Indium concentration influence on PL spatial inhomogeneity in InGaN single quantum well structures detected by original low-cost near-field probes Indium concentration influence on PL spatial inhomogeneity in InGaN single quantum well structures detected by original low-cost near-field probes Indium concentration influence on PL spatial inhomogeneity in InGaN single quantum well structures detected by original low-cost near-field probes Applied Surface Science, 229, 1-4, 338-345 Applied Surface Science, 229, 1-4, 338-345 Applied Surface Science, 229, 1-4, 338-345 2004/05/15 英語 公開
K. Okamoto; J. Choi; Y. Kawakami; M. Terazima; T. Mukai; S. Fujita K. Okamoto; J. Choi; Y. Kawakami; M. Terazima; T. Mukai; S. Fujita K. Okamoto; J. Choi; Y. Kawakami; M. Terazima; T. Mukai; S. Fujita Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 43, 2, 839-840 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 43, 2, 839-840 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 43, 2, 839-840 2004/02 英語 公開
A. Sasaki; K. Nishizuka; T. Wang; S. Sakai; A. Kaneta; Y. Kawakami; S. Fujita A. Sasaki; K. Nishizuka; T. Wang; S. Sakai; A. Kaneta; Y. Kawakami; S. Fujita A. Sasaki; K. Nishizuka; T. Wang; S. Sakai; A. Kaneta; Y. Kawakami; S. Fujita Radiative carrier recombination dependent on temperature and well width of InGaN/GaN single quantum well Radiative carrier recombination dependent on temperature and well width of InGaN/GaN single quantum well Radiative carrier recombination dependent on temperature and well width of InGaN/GaN single quantum well Solid State Communications, 129, 1, 31-35 Solid State Communications, 129, 1, 31-35 Solid State Communications, 129, 1, 31-35 2004/01 英語 公開
Y. Kawakami; A. Kaneta; K. Omae; A. Shikanai; K. Okamoto; G. Marutsuki; Y. Narukawa; T. Mukai; Sg. Fujita Y. Kawakami; A. Kaneta; K. Omae; A. Shikanai; K. Okamoto; G. Marutsuki; Y. Narukawa; T. Mukai; Sg. Fujita Y. Kawakami; A. Kaneta; K. Omae; A. Shikanai; K. Okamoto; G. Marutsuki; Y. Narukawa; T. Mukai; Sg. Fujita Recombination dynamics in low-dimensional nitride semiconductors Recombination dynamics in low-dimensional nitride semiconductors Recombination dynamics in low-dimensional nitride semiconductors Physica Status Solidi (B) Basic Research, 240, 2, 337-343 Physica Status Solidi (B) Basic Research, 240, 2, 337-343 Physica Status Solidi (B) Basic Research, 240, 2, 337-343 2003/11 英語 公開
K. Okamoto; S. Fujita; Y. Kawakami; A. Scherer K. Okamoto; S. Fujita; Y. Kawakami; A. Scherer K. Okamoto; S. Fujita; Y. Kawakami; A. Scherer Sub-microscopic transient lens spectroscopy of InGaN/GaN quantum wells Sub-microscopic transient lens spectroscopy of InGaN/GaN quantum wells Sub-microscopic transient lens spectroscopy of InGaN/GaN quantum wells Physica Status Solidi (B) Basic Research, 240, 2, 368-371 Physica Status Solidi (B) Basic Research, 240, 2, 368-371 Physica Status Solidi (B) Basic Research, 240, 2, 368-371 2003/11 英語 公開
A. Shikanai; K. Kojima; K. Omae; Y. Kawakami; Y. Narukawa; T. Mukai; S. Fujita A. Shikanai; K. Kojima; K. Omae; Y. Kawakami; Y. Narukawa; T. Mukai; S. Fujita A. Shikanai; K. Kojima; K. Omae; Y. Kawakami; Y. Narukawa; T. Mukai; S. Fujita The hot carrier dynamics in InGaN multi-quantum well structure The hot carrier dynamics in InGaN multi-quantum well structure The hot carrier dynamics in InGaN multi-quantum well structure Physica Status Solidi (B) Basic Research, 240, 2, 392-395 Physica Status Solidi (B) Basic Research, 240, 2, 392-395 Physica Status Solidi (B) Basic Research, 240, 2, 392-395 2003/11 英語 公開
A. Kaneta; T. Mutoh; Y. Kawakami; S. Fujita; G. Marutsuki; Y. Narukawa; T. Mukai A. Kaneta; T. Mutoh; Y. Kawakami; S. Fujita; G. Marutsuki; Y. Narukawa; T. Mukai A. Kaneta; T. Mutoh; Y. Kawakami; S. Fujita; G. Marutsuki; Y. Narukawa; T. Mukai Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy Applied Physics Letters, 83, 17, 3462-3464 Applied Physics Letters, 83, 17, 3462-3464 Applied Physics Letters, 83, 17, 3462-3464 2003/10/27 英語 公開
K. Omae; Y. Kawakami; S. Fujita; Y. Narukawa; T. Mukai K. Omae; Y. Kawakami; S. Fujita; Y. Narukawa; T. Mukai K. Omae; Y. Kawakami; S. Fujita; Y. Narukawa; T. Mukai Effects of internal electrical field on transient absorption in In <sub>x</sub>Ga<sub>1-x</sub>N thin layers and quantum wells with different thickness by pump and probe spectroscopy Effects of internal electrical field on transient absorption in In <sub>x</sub>Ga<sub>1-x</sub>N thin layers and quantum wells with different thickness by pump and probe spectroscopy Effects of internal electrical field on transient absorption in In <sub>x</sub>Ga<sub>1-x</sub>N thin layers and quantum wells with different thickness by pump and probe spectroscopy Physical Review B - Condensed Matter and Materials Physics, 68, 8 Physical Review B - Condensed Matter and Materials Physics, 68, 8 Physical Review B - Condensed Matter and Materials Physics, 68, 8 2003/08/15 英語 公開
K. Okamoto; K. Inoue; Y. Kawakami; S. Fujita; M. Terazima; A. Tsujimura; I. Kidoguchi K. Okamoto; K. Inoue; Y. Kawakami; S. Fujita; M. Terazima; A. Tsujimura; I. Kidoguchi K. Okamoto; K. Inoue; Y. Kawakami; S. Fujita; M. Terazima; A. Tsujimura; I. Kidoguchi Nonradiative recombination processes of carriers in InGaN/GaN probed by the microscopic transient lens spectroscopy Nonradiative recombination processes of carriers in InGaN/GaN probed by the microscopic transient lens spectroscopy Nonradiative recombination processes of carriers in InGaN/GaN probed by the microscopic transient lens spectroscopy Review of Scientific Instruments, 74, 1, 575-577 Review of Scientific Instruments, 74, 1, 575-577 Review of Scientific Instruments, 74, 1, 575-577 2003/01 英語 公開
A. Shikanai; H. Fukahori; Y. Kawakami; K. Hazu; T. Sota; T. Mitani; T. Mukai; Sg. Fujita A. Shikanai; H. Fukahori; Y. Kawakami; K. Hazu; T. Sota; T. Mitani; T. Mukai; Sg. Fujita A. Shikanai; H. Fukahori; Y. Kawakami; K. Hazu; T. Sota; T. Mitani; T. Mukai; Sg. Fujita Optical properties of Si-, Ge- and Sn-doped GaN Optical properties of Si-, Ge- and Sn-doped GaN Optical properties of Si-, Ge- and Sn-doped GaN Physica Status Solidi (B) Basic Research, 235, 1, 26-30 Physica Status Solidi (B) Basic Research, 235, 1, 26-30 Physica Status Solidi (B) Basic Research, 235, 1, 26-30 2003/01 英語 公開
A. Kaneta; K. Okamoto; Y. Kawakami; S. Fujita; G. Marutsuki; Y. Narukawa; T. Mukai A. Kaneta; K. Okamoto; Y. Kawakami; S. Fujita; G. Marutsuki; Y. Narukawa; T. Mukai A. Kaneta; K. Okamoto; Y. Kawakami; S. Fujita; G. Marutsuki; Y. Narukawa; T. Mukai Spatial and temporal luminescence dynamics in an In<sub>x</sub>Ga<sub>1-x</sub>N single quantum well probed by near-field optical microscopy Spatial and temporal luminescence dynamics in an In<sub>x</sub>Ga<sub>1-x</sub>N single quantum well probed by near-field optical microscopy Spatial and temporal luminescence dynamics in an In<sub>x</sub>Ga<sub>1-x</sub>N single quantum well probed by near-field optical microscopy Applied Physics Letters, 81, 23, 4353-4355 Applied Physics Letters, 81, 23, 4353-4355 Applied Physics Letters, 81, 23, 4353-4355 2002/12/02 英語 公開
G. Marutsuki; Y. Narukawa; T. Mitani; T. Mukai; G. Shinomiya; A. Kaneta; Y. Kawakami; Sg. Fujita G. Marutsuki; Y. Narukawa; T. Mitani; T. Mukai; G. Shinomiya; A. Kaneta; Y. Kawakami; Sg. Fujita G. Marutsuki; Y. Narukawa; T. Mitani; T. Mukai; G. Shinomiya; A. Kaneta; Y. Kawakami; Sg. Fujita Electroluminescence mapping of InGaN-based LEDs by SNOM Electroluminescence mapping of InGaN-based LEDs by SNOM Electroluminescence mapping of InGaN-based LEDs by SNOM Physica Status Solidi (A) Applied Research, 192, 1, 110-116 Physica Status Solidi (A) Applied Research, 192, 1, 110-116 Physica Status Solidi (A) Applied Research, 192, 1, 110-116 2002/07/16 英語 公開
K. Omae; Y. Kawakami; Y. Narukawa; Y. Watanabe; T. Mukai; S. Fujita K. Omae; Y. Kawakami; Y. Narukawa; Y. Watanabe; T. Mukai; S. Fujita K. Omae; Y. Kawakami; Y. Narukawa; Y. Watanabe; T. Mukai; S. Fujita Nondegenerated pump and probe spectroscopy in InGaN-based semiconductors Nondegenerated pump and probe spectroscopy in InGaN-based semiconductors Nondegenerated pump and probe spectroscopy in InGaN-based semiconductors Physica Status Solidi (A) Applied Research, 190, 1, 93-98 Physica Status Solidi (A) Applied Research, 190, 1, 93-98 Physica Status Solidi (A) Applied Research, 190, 1, 93-98 2002/03/16 英語 公開
K. Omae; Y. Kawakami; S. Fujita K. Omae; Y. Kawakami; S. Fujita K. Omae; Y. Kawakami; S. Fujita Effects of internal electric field and carrier density on transient absorption spectra in a thin GaN epilayer Effects of internal electric field and carrier density on transient absorption spectra in a thin GaN epilayer Effects of internal electric field and carrier density on transient absorption spectra in a thin GaN epilayer Physical Review B - Condensed Matter and Materials Physics, 65, 7 Physical Review B - Condensed Matter and Materials Physics, 65, 7 Physical Review B - Condensed Matter and Materials Physics, 65, 7 2002/02/15 英語 公開
K. Okamoto; A. Kaneta; K. Inoue; Y. Kawakami; M. Terazima; G. Shinomiya; T. Mukai; S.G. Fujita K. Okamoto; A. Kaneta; K. Inoue; Y. Kawakami; M. Terazima; G. Shinomiya; T. Mukai; S.G. Fujita K. Okamoto; A. Kaneta; K. Inoue; Y. Kawakami; M. Terazima; G. Shinomiya; T. Mukai; S.G. Fujita Carrier dynamics in InGaN/GaN SQW structure probed by the transient grating method with subpicosecond pulsed laser Carrier dynamics in InGaN/GaN SQW structure probed by the transient grating method with subpicosecond pulsed laser Carrier dynamics in InGaN/GaN SQW structure probed by the transient grating method with subpicosecond pulsed laser Physica Status Solidi (B) Basic Research, 228, 1, 81-84 Physica Status Solidi (B) Basic Research, 228, 1, 81-84 Physica Status Solidi (B) Basic Research, 228, 1, 81-84 2001/11 英語 公開
A. Kaneta; G. Marutsuki; K. Okamoto; Y. Kawakami; Y. Nakagawa; G. Shinomiya; T. Mukai; Sg. Fujita A. Kaneta; G. Marutsuki; K. Okamoto; Y. Kawakami; Y. Nakagawa; G. Shinomiya; T. Mukai; Sg. Fujita A. Kaneta; G. Marutsuki; K. Okamoto; Y. Kawakami; Y. Nakagawa; G. Shinomiya; T. Mukai; Sg. Fujita Spatial inhomogeneity of photoluminescence in InGaN single quantum well structures Spatial inhomogeneity of photoluminescence in InGaN single quantum well structures Spatial inhomogeneity of photoluminescence in InGaN single quantum well structures Physica Status Solidi (B) Basic Research, 228, 1, 153-156 Physica Status Solidi (B) Basic Research, 228, 1, 153-156 Physica Status Solidi (B) Basic Research, 228, 1, 153-156 2001/11 英語 公開
K. Omae; Y. Kawakami; S. Fujita; Y. Kiyoku; T. Mukai K. Omae; Y. Kawakami; S. Fujita; Y. Kiyoku; T. Mukai K. Omae; Y. Kawakami; S. Fujita; Y. Kiyoku; T. Mukai Degenerate four-wave-mixing spectroscopy on epitaxially laterally overgrown GaN: Signals from below the fundamental absorption edge Degenerate four-wave-mixing spectroscopy on epitaxially laterally overgrown GaN: Signals from below the fundamental absorption edge Degenerate four-wave-mixing spectroscopy on epitaxially laterally overgrown GaN: Signals from below the fundamental absorption edge Applied Physics Letters, 79, 15, 2351-2353 Applied Physics Letters, 79, 15, 2351-2353 Applied Physics Letters, 79, 15, 2351-2353 2001/10/08 英語 公開
Y. Kawakami; K. Omae; A. Kaneta; K. Okamoto; Y. Narukawa; T. Mukai; S. Fujita Y. Kawakami; K. Omae; A. Kaneta; K. Okamoto; Y. Narukawa; T. Mukai; S. Fujita Y. Kawakami; K. Omae; A. Kaneta; K. Okamoto; Y. Narukawa; T. Mukai; S. Fujita In inhomogeneity and emission characteristics of InGaN In inhomogeneity and emission characteristics of InGaN In inhomogeneity and emission characteristics of InGaN Journal of Physics Condensed Matter, 13, 32, 6993-7010 Journal of Physics Condensed Matter, 13, 32, 6993-7010 Journal of Physics Condensed Matter, 13, 32, 6993-7010 2001/08/13 英語 公開
Y. Kawakami; Y. Narukawa; K. Omae; S. Nakamura; Sg. Fujita Y. Kawakami; Y. Narukawa; K. Omae; S. Nakamura; Sg. Fujita Y. Kawakami; Y. Narukawa; K. Omae; S. Nakamura; Sg. Fujita Pump and probe spectroscopy of InGaN multi quantum well based laser diodes Pump and probe spectroscopy of InGaN multi quantum well based laser diodes Pump and probe spectroscopy of InGaN multi quantum well based laser diodes Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 82, 1-3, 188-193 Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 82, 1-3, 188-193 Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 82, 1-3, 188-193 2001/05/22 英語 公開
A. Sasaki; K. Tsuchida; Y. Narukawa; Y. Kawakami; Sg. Fujita; Y. Hsu; G.B. Stringfellow A. Sasaki; K. Tsuchida; Y. Narukawa; Y. Kawakami; Sg. Fujita; Y. Hsu; G.B. Stringfellow A. Sasaki; K. Tsuchida; Y. Narukawa; Y. Kawakami; Sg. Fujita; Y. Hsu; G.B. Stringfellow Ordering dependence of carrier lifetimes and ordered states of Ga<sub>0.52</sub>In<sub>0.48</sub>P/GaAs with degree of order ≤0.55 Ordering dependence of carrier lifetimes and ordered states of Ga<sub>0.52</sub>In<sub>0.48</sub>P/GaAs with degree of order ≤0.55 Ordering dependence of carrier lifetimes and ordered states of Ga<sub>0.52</sub>In<sub>0.48</sub>P/GaAs with degree of order ≤0.55 Journal of Applied Physics, 89, 1, 343-347 Journal of Applied Physics, 89, 1, 343-347 Journal of Applied Physics, 89, 1, 343-347 2001/01/01 英語 公開
Y. Kawakami; K. Omae; A. Kaneta; K. Okamoto; T. Izumi; S. Saijou; K. Inoue; Y. Narukawa; T. Mukai; Sg. Fujita Y. Kawakami; K. Omae; A. Kaneta; K. Okamoto; T. Izumi; S. Saijou; K. Inoue; Y. Narukawa; T. Mukai; Sg. Fujita Y. Kawakami; K. Omae; A. Kaneta; K. Okamoto; T. Izumi; S. Saijou; K. Inoue; Y. Narukawa; T. Mukai; Sg. Fujita Radiative and nonradiative recombination processes in GaN-based semiconductors Radiative and nonradiative recombination processes in GaN-based semiconductors Radiative and nonradiative recombination processes in GaN-based semiconductors Physica Status Solidi (A) Applied Research, 183, 1, 41-50 Physica Status Solidi (A) Applied Research, 183, 1, 41-50 Physica Status Solidi (A) Applied Research, 183, 1, 41-50 2001/01 英語 公開
A. Kaneta; T. Izumi; K. Okamoto; Y. Kawakami; S. Fujita; Y. Narita; T. Inoue; T. Mukai A. Kaneta; T. Izumi; K. Okamoto; Y. Kawakami; S. Fujita; Y. Narita; T. Inoue; T. Mukai A. Kaneta; T. Izumi; K. Okamoto; Y. Kawakami; S. Fujita; Y. Narita; T. Inoue; T. Mukai Spatial inhomogeneity of photoluminescence in an InGaN-based light-emitting diode structure probed by near-field optical microscopy under illumination-collection mode Spatial inhomogeneity of photoluminescence in an InGaN-based light-emitting diode structure probed by near-field optical microscopy under illumination-collection mode Spatial inhomogeneity of photoluminescence in an InGaN-based light-emitting diode structure probed by near-field optical microscopy under illumination-collection mode Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 40, 1, 110-111 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 40, 1, 110-111 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 40, 1, 110-111 2001/01 英語 公開
Okamoto, K; Kawakami, Y; Fujita, S; Terazima, M Okamoto, K; Kawakami, Y; Fujita, S; Terazima, M Okamoto, K; Kawakami, Y; Fujita, S; Terazima, M Photothermal processes of wide-bandgap semiconductors probed by the transient grating method Photothermal processes of wide-bandgap semiconductors probed by the transient grating method Photothermal processes of wide-bandgap semiconductors probed by the transient grating method ANALYTICAL SCIENCES, 17, S312-S314 ANALYTICAL SCIENCES, 17, S312-S314 ANALYTICAL SCIENCES, 17, S312-S314 2001 英語 公開
Z.H. Zheng; K. Okamoto; H.C. Ko; Y. Kawakami; Sg. Fujita Z.H. Zheng; K. Okamoto; H.C. Ko; Y. Kawakami; Sg. Fujita Z.H. Zheng; K. Okamoto; H.C. Ko; Y. Kawakami; Sg. Fujita Narrow luminescence lines from self-assembled CdSe quantum dots at room temperature Narrow luminescence lines from self-assembled CdSe quantum dots at room temperature Narrow luminescence lines from self-assembled CdSe quantum dots at room temperature Applied Physics Letters, 78, 3, 297-299 Applied Physics Letters, 78, 3, 297-299 Applied Physics Letters, 78, 3, 297-299 2001 英語 公開
Y. Kawakami; K. Omae; Y. Narukawa; S. Nakamura; S. Fujita Y. Kawakami; K. Omae; Y. Narukawa; S. Nakamura; S. Fujita Y. Kawakami; K. Omae; Y. Narukawa; S. Nakamura; S. Fujita Emission mechanism in InGaN-based light emitting devices Emission mechanism in InGaN-based light emitting devices Emission mechanism in InGaN-based light emitting devices Zairyo/Journal of the Society of Materials Science, Japan, 50, 4, 372-375 Zairyo/Journal of the Society of Materials Science, Japan, 50, 4, 372-375 Zairyo/Journal of the Society of Materials Science, Japan, 50, 4, 372-375 2001 英語 公開
Y. Kawakami; Y. Narukawa; K. Omae; S. Fujita; S. Nakamura Y. Kawakami; Y. Narukawa; K. Omae; S. Fujita; S. Nakamura Y. Kawakami; Y. Narukawa; K. Omae; S. Fujita; S. Nakamura Dynamics of optical gain in In<sub>x</sub>Ga<sub>1-x</sub>N multi-quantum-well-based laser diodes Dynamics of optical gain in In<sub>x</sub>Ga<sub>1-x</sub>N multi-quantum-well-based laser diodes Dynamics of optical gain in In<sub>x</sub>Ga<sub>1-x</sub>N multi-quantum-well-based laser diodes Applied Physics Letters, 77, 14, 2151-2153 Applied Physics Letters, 77, 14, 2151-2153 Applied Physics Letters, 77, 14, 2151-2153 2000/10/02 英語 公開
K. Okamoto; H.-C. Ko; Y. Kawakami; S. Fujita K. Okamoto; H.-C. Ko; Y. Kawakami; S. Fujita K. Okamoto; H.-C. Ko; Y. Kawakami; S. Fujita Time-space-resolved photoluminescence from (Zn,Cd)Se-based quantum structures Time-space-resolved photoluminescence from (Zn,Cd)Se-based quantum structures Time-space-resolved photoluminescence from (Zn,Cd)Se-based quantum structures Journal of Crystal Growth, 214, 639-645 Journal of Crystal Growth, 214, 639-645 Journal of Crystal Growth, 214, 639-645 2000/06 英語 公開
J. Mori; H. Asahi; M. Fudeta; J.H. Noh; D. Watanabe; S. Matsuda; K. Asami; Y. Narukawa; Y. Kawakami; S. Fujita; T. Kaneko; S. Gonda J. Mori; H. Asahi; M. Fudeta; J.H. Noh; D. Watanabe; S. Matsuda; K. Asami; Y. Narukawa; Y. Kawakami; S. Fujita; T. Kaneko; S. Gonda J. Mori; H. Asahi; M. Fudeta; J.H. Noh; D. Watanabe; S. Matsuda; K. Asami; Y. Narukawa; Y. Kawakami; S. Fujita; T. Kaneko; S. Gonda Scanning tunneling microscopy and time-resolved photoluminiscence spectroscopy study of self-organized GaP/InP quantum dot structures Scanning tunneling microscopy and time-resolved photoluminiscence spectroscopy study of self-organized GaP/InP quantum dot structures Scanning tunneling microscopy and time-resolved photoluminiscence spectroscopy study of self-organized GaP/InP quantum dot structures Applied Surface Science, 159, 498-502 Applied Surface Science, 159, 498-502 Applied Surface Science, 159, 498-502 2000/06 英語 公開
J.M. Feng; K. Asai; Y. Narukawa; Y. Kawakami; S. Fujita; T. Ohachi J.M. Feng; K. Asai; Y. Narukawa; Y. Kawakami; S. Fujita; T. Ohachi J.M. Feng; K. Asai; Y. Narukawa; Y. Kawakami; S. Fujita; T. Ohachi Orientation effect on intersubband tunneling of quantum wells grown on high-index GaAs(n11)A (n≤4) substrates Orientation effect on intersubband tunneling of quantum wells grown on high-index GaAs(n11)A (n≤4) substrates Orientation effect on intersubband tunneling of quantum wells grown on high-index GaAs(n11)A (n≤4) substrates Applied Surface Science, 159, 532-539 Applied Surface Science, 159, 532-539 Applied Surface Science, 159, 532-539 2000/06 英語 公開
T. Izumi; Y. Narukawa; K. Okamoto; Y. Kawakami; S. Fujita; S. Nakamura T. Izumi; Y. Narukawa; K. Okamoto; Y. Kawakami; S. Fujita; S. Nakamura T. Izumi; Y. Narukawa; K. Okamoto; Y. Kawakami; S. Fujita; S. Nakamura Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution Journal of Luminescence, 87-9, 1196-1198 Journal of Luminescence, 87-9, 1196-1198 Journal of Luminescence, 87-9, 1196-1198 2000/05 英語 公開
S. Yamaguchi; H. Kurusu; Y. Kawakami; S. Fujita; S. Fujita S. Yamaguchi; H. Kurusu; Y. Kawakami; S. Fujita; S. Fujita S. Yamaguchi; H. Kurusu; Y. Kawakami; S. Fujita; S. Fujita Effect of degree of localization and confinement dimensionality of excitons on their recombination process in CdSe/ZnSe/ZnS<sub>x</sub>-Se<sub>1-x</sub> single quantum well structures Effect of degree of localization and confinement dimensionality of excitons on their recombination process in CdSe/ZnSe/ZnS<sub>x</sub>-Se<sub>1-x</sub> single quantum well structures Effect of degree of localization and confinement dimensionality of excitons on their recombination process in CdSe/ZnSe/ZnS<sub>x</sub>-Se<sub>1-x</sub> single quantum well structures Physical Review B - Condensed Matter and Materials Physics, 61, 15, 10303-10313 Physical Review B - Condensed Matter and Materials Physics, 61, 15, 10303-10313 Physical Review B - Condensed Matter and Materials Physics, 61, 15, 10303-10313 2000/04/15 英語 公開
Y. Kawakami; Y. Narukawa; K. Omae; Sg. Fujita; S. Nakamura Y. Kawakami; Y. Narukawa; K. Omae; Sg. Fujita; S. Nakamura Y. Kawakami; Y. Narukawa; K. Omae; Sg. Fujita; S. Nakamura Dimensionality of excitons in InGaN-based light emitting devices Dimensionality of excitons in InGaN-based light emitting devices Dimensionality of excitons in InGaN-based light emitting devices Physica Status Solidi (A) Applied Research, 178, 1, 331-336 Physica Status Solidi (A) Applied Research, 178, 1, 331-336 Physica Status Solidi (A) Applied Research, 178, 1, 331-336 2000/03 英語 公開
Y. Narukawa; S. Saijou; Y. Kawakami; S. Fujita; T. Mukai; S. Nakamura Y. Narukawa; S. Saijou; Y. Kawakami; S. Fujita; T. Mukai; S. Nakamura Y. Narukawa; S. Saijou; Y. Kawakami; S. Fujita; T. Mukai; S. Nakamura Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of an In<sub>0.02</sub>Ga<sub>0.98</sub>N active layer Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of an In<sub>0.02</sub>Ga<sub>0.98</sub>N active layer Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of an In<sub>0.02</sub>Ga<sub>0.98</sub>N active layer Applied Physics Letters, 74, 4, 558-560 Applied Physics Letters, 74, 4, 558-560 Applied Physics Letters, 74, 4, 558-560 1999 英語 公開
Y. Narukawa; Y. Kawakami; S. Fujita; S. Nakamura Y. Narukawa; Y. Kawakami; S. Fujita; S. Nakamura Y. Narukawa; Y. Kawakami; S. Fujita; S. Nakamura Dimensionality of excitons in laser-diode structures composed of In<sub>x</sub>Ga<sub>1-x</sub>N multiple quantum wells Dimensionality of excitons in laser-diode structures composed of In<sub>x</sub>Ga<sub>1-x</sub>N multiple quantum wells Dimensionality of excitons in laser-diode structures composed of In<sub>x</sub>Ga<sub>1-x</sub>N multiple quantum wells Physical Review B - Condensed Matter and Materials Physics, 59, 15, 10283-10288 Physical Review B - Condensed Matter and Materials Physics, 59, 15, 10283-10288 Physical Review B - Condensed Matter and Materials Physics, 59, 15, 10283-10288 1999 英語 公開
Y. Narukawa; Y. Kawakami; Sg. Fujita; S. Nakamura Y. Narukawa; Y. Kawakami; Sg. Fujita; S. Nakamura Y. Narukawa; Y. Kawakami; Sg. Fujita; S. Nakamura Recombination dynamics in In<sub>x</sub>Ga<sub>1-x</sub>N multiple-quantum-well based laser diodes under high photoexcitation Recombination dynamics in In<sub>x</sub>Ga<sub>1-x</sub>N multiple-quantum-well based laser diodes under high photoexcitation Recombination dynamics in In<sub>x</sub>Ga<sub>1-x</sub>N multiple-quantum-well based laser diodes under high photoexcitation Physica Status Solidi (A) Applied Research, 176, 1, 39-43 Physica Status Solidi (A) Applied Research, 176, 1, 39-43 Physica Status Solidi (A) Applied Research, 176, 1, 39-43 1999 英語 公開
M. Fudeta; H. Asahi; K. Asami; Y. Narukawa; Y. Kawakami; J.-H. Noh; J. Mori; D. Watanabe; S. Fujita; S.-I. Gonda M. Fudeta; H. Asahi; K. Asami; Y. Narukawa; Y. Kawakami; J.-H. Noh; J. Mori; D. Watanabe; S. Fujita; S.-I. Gonda M. Fudeta; H. Asahi; K. Asami; Y. Narukawa; Y. Kawakami; J.-H. Noh; J. Mori; D. Watanabe; S. Fujita; S.-I. Gonda Time-resolved photoluminescence study of strain-induced quantum dots self-formed in GaP/InP short-period superlattice Time-resolved photoluminescence study of strain-induced quantum dots self-formed in GaP/InP short-period superlattice Time-resolved photoluminescence study of strain-induced quantum dots self-formed in GaP/InP short-period superlattice Japanese Journal of Applied Physics, Part 2: Letters, 38, 9 A/B, L1006-L1008 Japanese Journal of Applied Physics, Part 2: Letters, 38, 9 A/B, L1006-L1008 Japanese Journal of Applied Physics, Part 2: Letters, 38, 9 A/B, L1006-L1008 1999 英語 公開
S.-S. Chang; S.O. Yoon; G.J. Choi; Y. Kawakami; S. Kurokawa; A. Sakai S.-S. Chang; S.O. Yoon; G.J. Choi; Y. Kawakami; S. Kurokawa; A. Sakai S.-S. Chang; S.O. Yoon; G.J. Choi; Y. Kawakami; S. Kurokawa; A. Sakai Properties of ambient air aged thin porous silicon Properties of ambient air aged thin porous silicon Properties of ambient air aged thin porous silicon Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 37, 1, 297-298 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 37, 1, 297-298 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 37, 1, 297-298 1998 英語 公開
S. Yamaguchi; H. Kurusu; Y. Kawakami; S. Fujita; S. Fujita S. Yamaguchi; H. Kurusu; Y. Kawakami; S. Fujita; S. Fujita S. Yamaguchi; H. Kurusu; Y. Kawakami; S. Fujita; S. Fujita Role of localized excitons in the stimulated emission in ultra-thin CdSe/ZnSe/ZnSSe single quantum-well structures Role of localized excitons in the stimulated emission in ultra-thin CdSe/ZnSe/ZnSSe single quantum-well structures Role of localized excitons in the stimulated emission in ultra-thin CdSe/ZnSe/ZnSSe single quantum-well structures Superlattices and Microstructures, 23, 6, 1189-1195 Superlattices and Microstructures, 23, 6, 1189-1195 Superlattices and Microstructures, 23, 6, 1189-1195 1998 英語 公開
Y. Narukawa; S. Saijyo; Y. Kawakami; S. Fujita; S. Fujita; S. Nakamura Y. Narukawa; S. Saijyo; Y. Kawakami; S. Fujita; S. Fujita; S. Nakamura Y. Narukawa; S. Saijyo; Y. Kawakami; S. Fujita; S. Fujita; S. Nakamura Time-resolved electroluminescence spectroscopy of In<sub>x</sub>Ga<sub>1 - x</sub>N single quantum well LEDs Time-resolved electroluminescence spectroscopy of In<sub>x</sub>Ga<sub>1 - x</sub>N single quantum well LEDs Time-resolved electroluminescence spectroscopy of In<sub>x</sub>Ga<sub>1 - x</sub>N single quantum well LEDs Journal of Crystal Growth, 189-190, 593-596 Journal of Crystal Growth, 189-190, 593-596 Journal of Crystal Growth, 189-190, 593-596 1998 英語 公開
Y. Narukawa; K. Sawada; Y. Kawakami; S. Fujita; S. Fujita; S. Nakamura Y. Narukawa; K. Sawada; Y. Kawakami; S. Fujita; S. Fujita; S. Nakamura Y. Narukawa; K. Sawada; Y. Kawakami; S. Fujita; S. Fujita; S. Nakamura Emission mechanism of localized excitons in In<sub>x</sub>Ga<sub>1 - x</sub>N single quantum wells Emission mechanism of localized excitons in In<sub>x</sub>Ga<sub>1 - x</sub>N single quantum wells Emission mechanism of localized excitons in In<sub>x</sub>Ga<sub>1 - x</sub>N single quantum wells Journal of Crystal Growth, 189-190, 606-610 Journal of Crystal Growth, 189-190, 606-610 Journal of Crystal Growth, 189-190, 606-610 1998 英語 公開
Y. Kawakami; Y. Narukawa; K. Sawada; S. Saijyo; S. Fujita; S. Fujita; S. Nakamura Y. Kawakami; Y. Narukawa; K. Sawada; S. Saijyo; S. Fujita; S. Fujita; S. Nakamura Y. Kawakami; Y. Narukawa; K. Sawada; S. Saijyo; S. Fujita; S. Fujita; S. Nakamura The mechanism of radiative recombination in light-emitting devices composed on InGaN quantum wells The mechanism of radiative recombination in light-emitting devices composed on InGaN quantum wells The mechanism of radiative recombination in light-emitting devices composed on InGaN quantum wells Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), 81, 7, 45-56 Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), 81, 7, 45-56 Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), 81, 7, 45-56 1998 英語 公開
T. Onishi; H. Adachi; I. Kidoguchi; M. Mannoh; A. Takamori; Y. Narukawa; Y. Kawakami; S. Fujita T. Onishi; H. Adachi; I. Kidoguchi; M. Mannoh; A. Takamori; Y. Narukawa; Y. Kawakami; S. Fujita T. Onishi; H. Adachi; I. Kidoguchi; M. Mannoh; A. Takamori; Y. Narukawa; Y. Kawakami; S. Fujita Doping level and type of GaInP saturable absorbing layers for realizing pulsating 650-nm-band AlGaInP laser diodes Doping level and type of GaInP saturable absorbing layers for realizing pulsating 650-nm-band AlGaInP laser diodes Doping level and type of GaInP saturable absorbing layers for realizing pulsating 650-nm-band AlGaInP laser diodes IEEE Photonics Technology Letters, 10, 10, 1368-1370 IEEE Photonics Technology Letters, 10, 10, 1368-1370 IEEE Photonics Technology Letters, 10, 10, 1368-1370 1998 英語 公開
H.-C. Ko; D.-C. Park; Y. Kawakami; S. Fujita; S. Fujita; Y.-S. Kim H.-C. Ko; D.-C. Park; Y. Kawakami; S. Fujita; S. Fujita; Y.-S. Kim H.-C. Ko; D.-C. Park; Y. Kawakami; S. Fujita; S. Fujita; Y.-S. Kim Localized excitonic emissions of ZnCdSe/ZnSe quantum wells grown on a GaAs(110) cleaved surface Localized excitonic emissions of ZnCdSe/ZnSe quantum wells grown on a GaAs(110) cleaved surface Localized excitonic emissions of ZnCdSe/ZnSe quantum wells grown on a GaAs(110) cleaved surface Applied Physics Letters, 73, 10, 1388-1390 Applied Physics Letters, 73, 10, 1388-1390 Applied Physics Letters, 73, 10, 1388-1390 1998 英語 公開
H.-C. Ko; D.-C. Park; Y. Kawakami; S. Fujita; S. Fujita H.-C. Ko; D.-C. Park; Y. Kawakami; S. Fujita; S. Fujita H.-C. Ko; D.-C. Park; Y. Kawakami; S. Fujita; S. Fujita Fabrication of Zn<sub>1-x</sub>Cd<sub>x</sub>Se quantum dots by molecular beam epitaxy on the GaAs (110) cleaved surface Fabrication of Zn<sub>1-x</sub>Cd<sub>x</sub>Se quantum dots by molecular beam epitaxy on the GaAs (110) cleaved surface Fabrication of Zn<sub>1-x</sub>Cd<sub>x</sub>Se quantum dots by molecular beam epitaxy on the GaAs (110) cleaved surface Microelectronic Engineering, 43-44, 677-682 Microelectronic Engineering, 43-44, 677-682 Microelectronic Engineering, 43-44, 677-682 1998 英語 公開
Hyun-Chul Ko; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita Hyun-Chul Ko; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita Hyun-Chul Ko; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita Atomic force microscopy study of self-organized ZnCdSe nanostructures fabricated on the cleavage-induced GaAs (110) surface Atomic force microscopy study of self-organized ZnCdSe nanostructures fabricated on the cleavage-induced GaAs (110) surface Atomic force microscopy study of self-organized ZnCdSe nanostructures fabricated on the cleavage-induced GaAs (110) surface Applied Surface Science, 130-132, 719-723 Applied Surface Science, 130-132, 719-723 Applied Surface Science, 130-132, 719-723 1998 英語 公開
H.-C. Ko; Y. Kawakami; S. Fujita; S. Fujita H.-C. Ko; Y. Kawakami; S. Fujita; S. Fujita H.-C. Ko; Y. Kawakami; S. Fujita; S. Fujita New approach to the fabrication of CdSe/ZnSe quantum dots using a cleaved-edge overgrowth technique New approach to the fabrication of CdSe/ZnSe quantum dots using a cleaved-edge overgrowth technique New approach to the fabrication of CdSe/ZnSe quantum dots using a cleaved-edge overgrowth technique Journal of Crystal Growth, 184-185, 283-287 Journal of Crystal Growth, 184-185, 283-287 Journal of Crystal Growth, 184-185, 283-287 1998 英語 公開
J. Suda; M. Ogawa; K. Sakurai; Y. Kawakami; S. Fujita; S. Fujita J. Suda; M. Ogawa; K. Sakurai; Y. Kawakami; S. Fujita; S. Fujita J. Suda; M. Ogawa; K. Sakurai; Y. Kawakami; S. Fujita; S. Fujita Optical properties of light-hole excitons in ZnSSe/ZnMgSSe tensile-strained quantum wells Optical properties of light-hole excitons in ZnSSe/ZnMgSSe tensile-strained quantum wells Optical properties of light-hole excitons in ZnSSe/ZnMgSSe tensile-strained quantum wells Journal of Crystal Growth, 184-185, 863-866 Journal of Crystal Growth, 184-185, 863-866 Journal of Crystal Growth, 184-185, 863-866 1998 英語 公開
Y. Kawakami; Y. Narukawa; K. Sawada; S. Saijyo; S. Fujita; S. Fujita; S. Nakamura Y. Kawakami; Y. Narukawa; K. Sawada; S. Saijyo; S. Fujita; S. Fujita; S. Nakamura Y. Kawakami; Y. Narukawa; K. Sawada; S. Saijyo; S. Fujita; S. Fujita; S. Nakamura Recombination dynamics of localized excitons in self-formed InGaN quantum dots Recombination dynamics of localized excitons in self-formed InGaN quantum dots Recombination dynamics of localized excitons in self-formed InGaN quantum dots Materials Science and Engineering B, 50, 1-3, 256-263 Materials Science and Engineering B, 50, 1-3, 256-263 Materials Science and Engineering B, 50, 1-3, 256-263 1997 英語 公開
H.-C. Ko; D.-C. Park; Y. Kawakami; S. Fujita; S. Fujita H.-C. Ko; D.-C. Park; Y. Kawakami; S. Fujita; S. Fujita H.-C. Ko; D.-C. Park; Y. Kawakami; S. Fujita; S. Fujita Self-organized CdSe quantum dots onto cleaved GaAs (110) originating from Stranski-Krastanow growth mode Self-organized CdSe quantum dots onto cleaved GaAs (110) originating from Stranski-Krastanow growth mode Self-organized CdSe quantum dots onto cleaved GaAs (110) originating from Stranski-Krastanow growth mode Applied Physics Letters, 70, 24, 3278-3280 Applied Physics Letters, 70, 24, 3278-3280 Applied Physics Letters, 70, 24, 3278-3280 1997 英語 公開
J. Suda; R. Tokutome; Y. Kawakami; S. Fujita; S. Fujita J. Suda; R. Tokutome; Y. Kawakami; S. Fujita; S. Fujita J. Suda; R. Tokutome; Y. Kawakami; S. Fujita; S. Fujita Hydrogen sulfide treatment of GaAs substrate and its effects on initial stage of ZnSe growth Hydrogen sulfide treatment of GaAs substrate and its effects on initial stage of ZnSe growth Hydrogen sulfide treatment of GaAs substrate and its effects on initial stage of ZnSe growth Journal of Crystal Growth, 175-176, PART 1, 593-597 Journal of Crystal Growth, 175-176, PART 1, 593-597 Journal of Crystal Growth, 175-176, PART 1, 593-597 1997 英語 公開
H.-C. Ko; D.-C. Park; Y. Kawakami; S. Fujita; S. Fujita H.-C. Ko; D.-C. Park; Y. Kawakami; S. Fujita; S. Fujita H.-C. Ko; D.-C. Park; Y. Kawakami; S. Fujita; S. Fujita Microscopic photoluminescence spectroscopy of self-organized CdSe-ZnSe quantum dots grown on the GaAs (110) cleaved surface Microscopic photoluminescence spectroscopy of self-organized CdSe-ZnSe quantum dots grown on the GaAs (110) cleaved surface Microscopic photoluminescence spectroscopy of self-organized CdSe-ZnSe quantum dots grown on the GaAs (110) cleaved surface IEEE Journal on Selected Topics in Quantum Electronics, 3, 3, 831-835 IEEE Journal on Selected Topics in Quantum Electronics, 3, 3, 831-835 IEEE Journal on Selected Topics in Quantum Electronics, 3, 3, 831-835 1997 英語 公開
H.-C. Ko; D.-C. Park; Y. Kawakami; S. Fujita; S. Fujita H.-C. Ko; D.-C. Park; Y. Kawakami; S. Fujita; S. Fujita H.-C. Ko; D.-C. Park; Y. Kawakami; S. Fujita; S. Fujita Optimization of ZnSe growth on the cleavage-induced GaAs (1 1 0) surface by molecular-beam epitaxy Optimization of ZnSe growth on the cleavage-induced GaAs (1 1 0) surface by molecular-beam epitaxy Optimization of ZnSe growth on the cleavage-induced GaAs (1 1 0) surface by molecular-beam epitaxy Journal of Crystal Growth, 178, 3, 246-251 Journal of Crystal Growth, 178, 3, 246-251 Journal of Crystal Growth, 178, 3, 246-251 1997 英語 公開
H.-C. Ko; D.-C. Park; Y. Kawakami; S. Fujita; S. Fujita H.-C. Ko; D.-C. Park; Y. Kawakami; S. Fujita; S. Fujita H.-C. Ko; D.-C. Park; Y. Kawakami; S. Fujita; S. Fujita Self-aligning phenomena of ZnCdSe islands grown by molecular beam epitaxy on GaAs(110) surface cleaved in ultra high vacuum Self-aligning phenomena of ZnCdSe islands grown by molecular beam epitaxy on GaAs(110) surface cleaved in ultra high vacuum Self-aligning phenomena of ZnCdSe islands grown by molecular beam epitaxy on GaAs(110) surface cleaved in ultra high vacuum Applied Surface Science, 117-118, 484-488 Applied Surface Science, 117-118, 484-488 Applied Surface Science, 117-118, 484-488 1997 英語 公開
S. Tanaka; H. Hirayama; Y. Aoyagi; Y. Narukawa; Y. Kawakami; S. Fujita; S. Fujita S. Tanaka; H. Hirayama; Y. Aoyagi; Y. Narukawa; Y. Kawakami; S. Fujita; S. Fujita S. Tanaka; H. Hirayama; Y. Aoyagi; Y. Narukawa; Y. Kawakami; S. Fujita; S. Fujita Simulated emission from optically pumped GaN quantum dots Simulated emission from optically pumped GaN quantum dots Simulated emission from optically pumped GaN quantum dots Applied Physics Letters, 71, 10, 1299-1301 Applied Physics Letters, 71, 10, 1299-1301 Applied Physics Letters, 71, 10, 1299-1301 1997 英語 公開
Y. Narukawa; Y. Kawakami; M. Funato; S. Fujita; S. Fujita; S. Nakamura Y. Narukawa; Y. Kawakami; M. Funato; S. Fujita; S. Fujita; S. Nakamura Y. Narukawa; Y. Kawakami; M. Funato; S. Fujita; S. Fujita; S. Nakamura Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm Applied Physics Letters, 70, 8, 981-983 Applied Physics Letters, 70, 8, 981-983 Applied Physics Letters, 70, 8, 981-983 1997 英語 公開
Y. Narukawa; Y. Kawakami; S. Fujita; S. Fujita; S. Nakamura Y. Narukawa; Y. Kawakami; S. Fujita; S. Fujita; S. Nakamura Y. Narukawa; Y. Kawakami; S. Fujita; S. Fujita; S. Nakamura Recombination dynamics of localized excitons in In<sub>0.20</sub>Ga<sub>0.80</sub>N-In<sub>0.05</sub>Ga<sub>0.95</sub>N multiple quantum wells Recombination dynamics of localized excitons in In<sub>0.20</sub>Ga<sub>0.80</sub>N-In<sub>0.05</sub>Ga<sub>0.95</sub>N multiple quantum wells Recombination dynamics of localized excitons in In<sub>0.20</sub>Ga<sub>0.80</sub>N-In<sub>0.05</sub>Ga<sub>0.95</sub>N multiple quantum wells Physical Review B - Condensed Matter and Materials Physics, 55, 4, R1938-R1941 Physical Review B - Condensed Matter and Materials Physics, 55, 4, R1938-R1941 Physical Review B - Condensed Matter and Materials Physics, 55, 4, R1938-R1941 1997 英語 公開
H.-C. Ko; D.-C. Park; Y. Kawakami; S. Fujita; S. Fujita; C.-O. Kim H.-C. Ko; D.-C. Park; Y. Kawakami; S. Fujita; S. Fujita; C.-O. Kim H.-C. Ko; D.-C. Park; Y. Kawakami; S. Fujita; S. Fujita; C.-O. Kim Effect of cleaving environment on the growth of ZnSe on the GaAs (1 1 0) surface by molecular beam epitaxy Effect of cleaving environment on the growth of ZnSe on the GaAs (1 1 0) surface by molecular beam epitaxy Effect of cleaving environment on the growth of ZnSe on the GaAs (1 1 0) surface by molecular beam epitaxy Journal of Materials Science Letters, 16, 13, 1187-1190 Journal of Materials Science Letters, 16, 13, 1187-1190 Journal of Materials Science Letters, 16, 13, 1187-1190 1997 英語 公開
Yoichi Kawakami; Yukio Narukawa; Shizuo Fujita; Shigeo Fujita; Shuji Nakamura Yoichi Kawakami; Yukio Narukawa; Shizuo Fujita; Shigeo Fujita; Shuji Nakamura Yoichi Kawakami; Yukio Narukawa; Shizuo Fujita; Shigeo Fujita; Shuji Nakamura Excitonic properties in InGaN/GaN MQW structures Excitonic properties in InGaN/GaN MQW structures Excitonic properties in InGaN/GaN MQW structures Molecular Crystals and Liquid Crystals Science and Technology Section B: Nonlinear Optics, 18, 2-4, 277-284 Molecular Crystals and Liquid Crystals Science and Technology Section B: Nonlinear Optics, 18, 2-4, 277-284 Molecular Crystals and Liquid Crystals Science and Technology Section B: Nonlinear Optics, 18, 2-4, 277-284 1997 英語 公開
H.-C. Ko; Y. Kawakami; S. Fujita; S. Fujita H.-C. Ko; Y. Kawakami; S. Fujita; S. Fujita H.-C. Ko; Y. Kawakami; S. Fujita; S. Fujita Cleaved edge overgrowth of ZnSe on GaAs (110) by molecular beam epitaxy Cleaved edge overgrowth of ZnSe on GaAs (110) by molecular beam epitaxy Cleaved edge overgrowth of ZnSe on GaAs (110) by molecular beam epitaxy Journal of the Korean Physical Society, 30, SUPPL. PART 1, S62-S64 Journal of the Korean Physical Society, 30, SUPPL. PART 1, S62-S64 Journal of the Korean Physical Society, 30, SUPPL. PART 1, S62-S64 1997 英語 公開
H.-C. Ko; D.-C. Park; Y. Kawakami; S. Fujita; S. Fujita H.-C. Ko; D.-C. Park; Y. Kawakami; S. Fujita; S. Fujita H.-C. Ko; D.-C. Park; Y. Kawakami; S. Fujita; S. Fujita Molecular beam epitaxial growth behaviors of Zn<sub>1-x</sub>Cd<sub>x</sub>Se on the GaAs (110) surface cleaved in ultra high vacuum Molecular beam epitaxial growth behaviors of Zn<sub>1-x</sub>Cd<sub>x</sub>Se on the GaAs (110) surface cleaved in ultra high vacuum Molecular beam epitaxial growth behaviors of Zn<sub>1-x</sub>Cd<sub>x</sub>Se on the GaAs (110) surface cleaved in ultra high vacuum Shinku/Journal of the Vacuum Society of Japan, 40, 3, 317-320 Shinku/Journal of the Vacuum Society of Japan, 40, 3, 317-320 Shinku/Journal of the Vacuum Society of Japan, 40, 3, 317-320 1997 英語 公開
Y. Kawakami; Z.G. Peng; Y. Narukawa; S. Fujita; S. Fujita; S. Nakamura Y. Kawakami; Z.G. Peng; Y. Narukawa; S. Fujita; S. Fujita; S. Nakamura Y. Kawakami; Z.G. Peng; Y. Narukawa; S. Fujita; S. Fujita; S. Nakamura Recombination dynamics of excitons and biexcitons in a hexagonal GaN epitaxial layer Recombination dynamics of excitons and biexcitons in a hexagonal GaN epitaxial layer Recombination dynamics of excitons and biexcitons in a hexagonal GaN epitaxial layer Applied Physics Letters, 69, 10, 1414-1416 Applied Physics Letters, 69, 10, 1414-1416 Applied Physics Letters, 69, 10, 1414-1416 1996 英語 公開
S. Yamaguchi; Y. Kawakami; S. Fujita; S. Fujita; Y. Yamada; T. Mishina; Y. Masumoto S. Yamaguchi; Y. Kawakami; S. Fujita; S. Fujita; Y. Yamada; T. Mishina; Y. Masumoto S. Yamaguchi; Y. Kawakami; S. Fujita; S. Fujita; Y. Yamada; T. Mishina; Y. Masumoto Recombination dynamics of localized excitons in a CdSe/ZnSe/ZnS<sub>x</sub>Se<sub>1-x</sub> single-quantum-well structure Recombination dynamics of localized excitons in a CdSe/ZnSe/ZnS<sub>x</sub>Se<sub>1-x</sub> single-quantum-well structure Recombination dynamics of localized excitons in a CdSe/ZnSe/ZnS<sub>x</sub>Se<sub>1-x</sub> single-quantum-well structure Physical Review B - Condensed Matter and Materials Physics, 54, 4, 2629-2634 Physical Review B - Condensed Matter and Materials Physics, 54, 4, 2629-2634 Physical Review B - Condensed Matter and Materials Physics, 54, 4, 2629-2634 1996 英語 公開
S. Fujita; Y. Kawakami; S. Fujita S. Fujita; Y. Kawakami; S. Fujita S. Fujita; Y. Kawakami; S. Fujita MO(GS)MBE and photo-MO(GS)MBE of II-VI semiconductors MO(GS)MBE and photo-MO(GS)MBE of II-VI semiconductors MO(GS)MBE and photo-MO(GS)MBE of II-VI semiconductors Journal of Crystal Growth, 164, 1-4, 196-201 Journal of Crystal Growth, 164, 1-4, 196-201 Journal of Crystal Growth, 164, 1-4, 196-201 1996 英語 公開
H.-C. Ko; D.-C. Park; Y. Kawakami; S. Fujita; S. Fujita H.-C. Ko; D.-C. Park; Y. Kawakami; S. Fujita; S. Fujita H.-C. Ko; D.-C. Park; Y. Kawakami; S. Fujita; S. Fujita Fabrication and optical properties of ZnCdSe/ZnSe single quantum wells on GaAs(110) surfaces cleaved in UHV by molecular beam epitaxy Fabrication and optical properties of ZnCdSe/ZnSe single quantum wells on GaAs(110) surfaces cleaved in UHV by molecular beam epitaxy Fabrication and optical properties of ZnCdSe/ZnSe single quantum wells on GaAs(110) surfaces cleaved in UHV by molecular beam epitaxy Semiconductor Science and Technology, 11, 12, 1873-1877 Semiconductor Science and Technology, 11, 12, 1873-1877 Semiconductor Science and Technology, 11, 12, 1873-1877 1996 英語 公開
Y. Kawakami; T. Onishi; S. Yamaguchi; H. Kurusu; S. Fujita; S. Fujita Y. Kawakami; T. Onishi; S. Yamaguchi; H. Kurusu; S. Fujita; S. Fujita Y. Kawakami; T. Onishi; S. Yamaguchi; H. Kurusu; S. Fujita; S. Fujita Time-resolved luminescence spectroscopy of recombination dynamics in a ZnSSe doping superlattice Time-resolved luminescence spectroscopy of recombination dynamics in a ZnSSe doping superlattice Time-resolved luminescence spectroscopy of recombination dynamics in a ZnSSe doping superlattice Journal of Crystal Growth, 159, 1-4, 429-433 Journal of Crystal Growth, 159, 1-4, 429-433 Journal of Crystal Growth, 159, 1-4, 429-433 1996 英語 公開
Y. Yamada; T. Mishina; Y. Masumoto; Y. Kawakami; J. Suda; S. Fujita; S. Fujita; T. Taguchi Y. Yamada; T. Mishina; Y. Masumoto; Y. Kawakami; J. Suda; S. Fujita; S. Fujita; T. Taguchi Y. Yamada; T. Mishina; Y. Masumoto; Y. Kawakami; J. Suda; S. Fujita; S. Fujita; T. Taguchi Dynamics of dense excitonic systems in ZnSe-based single quantum wells Dynamics of dense excitonic systems in ZnSe-based single quantum wells Dynamics of dense excitonic systems in ZnSe-based single quantum wells Journal of Crystal Growth, 159, 1-4, 814-817 Journal of Crystal Growth, 159, 1-4, 814-817 Journal of Crystal Growth, 159, 1-4, 814-817 1996 英語 公開
I.S. Hauksson; J. Suda; M. Tsuka; Y. Kawakami; Sz. Fujita; Sg. Fujita I.S. Hauksson; J. Suda; M. Tsuka; Y. Kawakami; Sz. Fujita; Sg. Fujita I.S. Hauksson; J. Suda; M. Tsuka; Y. Kawakami; Sz. Fujita; Sg. Fujita The role of defects on radiative transitions in nitrogen doped ZnSe The role of defects on radiative transitions in nitrogen doped ZnSe The role of defects on radiative transitions in nitrogen doped ZnSe Journal of Crystal Growth, 159, 1-4, 329-333 Journal of Crystal Growth, 159, 1-4, 329-333 Journal of Crystal Growth, 159, 1-4, 329-333 1996 英語 公開
Y. Kawakami; M. Funato; S. Fujita; S. Fujita; Y. Yamada; T. Mishina; Y. Masumoto Y. Kawakami; M. Funato; S. Fujita; S. Fujita; Y. Yamada; T. Mishina; Y. Masumoto Y. Kawakami; M. Funato; S. Fujita; S. Fujita; Y. Yamada; T. Mishina; Y. Masumoto Effects of high excitation on localized excitons in cubic ZnCdS lattice matched to GaAs Effects of high excitation on localized excitons in cubic ZnCdS lattice matched to GaAs Effects of high excitation on localized excitons in cubic ZnCdS lattice matched to GaAs Journal of Crystal Growth, 159, 1-4, 830-834 Journal of Crystal Growth, 159, 1-4, 830-834 Journal of Crystal Growth, 159, 1-4, 830-834 1996 英語 公開
J. Suda; M. Tsuka; D. Honda; M. Funato; Y. Kawakami; S. Fujita; S. Fujita J. Suda; M. Tsuka; D. Honda; M. Funato; Y. Kawakami; S. Fujita; S. Fujita J. Suda; M. Tsuka; D. Honda; M. Funato; Y. Kawakami; S. Fujita; S. Fujita Growth of P-type ZnSe by metalorganic molecular beam epitaxy using metal Zn and dimethylselenide Growth of P-type ZnSe by metalorganic molecular beam epitaxy using metal Zn and dimethylselenide Growth of P-type ZnSe by metalorganic molecular beam epitaxy using metal Zn and dimethylselenide Journal of Electronic Materials, 25, 2, 223-227 Journal of Electronic Materials, 25, 2, 223-227 Journal of Electronic Materials, 25, 2, 223-227 1996 英語 公開
H.-C. Ko; S. Yamaguchi; H. Kurusu; Y. Kawakami; S. Fujita; S. Fujita H.-C. Ko; S. Yamaguchi; H. Kurusu; Y. Kawakami; S. Fujita; S. Fujita H.-C. Ko; S. Yamaguchi; H. Kurusu; Y. Kawakami; S. Fujita; S. Fujita Reflection high energy electron diffraction intensity oscillations during the growth of ZnSe on cleaved GaAs(110) surface by molecular beam epitaxy Reflection high energy electron diffraction intensity oscillations during the growth of ZnSe on cleaved GaAs(110) surface by molecular beam epitaxy Reflection high energy electron diffraction intensity oscillations during the growth of ZnSe on cleaved GaAs(110) surface by molecular beam epitaxy Japanese Journal of Applied Physics, Part 2: Letters, 35, 3 B, L366-L369 Japanese Journal of Applied Physics, Part 2: Letters, 35, 3 B, L366-L369 Japanese Journal of Applied Physics, Part 2: Letters, 35, 3 B, L366-L369 1996 英語 公開
J. Suda; Y. Kawakami; S. Fujita; S. Fujita J. Suda; Y. Kawakami; S. Fujita; S. Fujita J. Suda; Y. Kawakami; S. Fujita; S. Fujita (2 × 6) surface reconstruction of GaAs (001) obtained by hydrogen sulfide irradiation (2 × 6) surface reconstruction of GaAs (001) obtained by hydrogen sulfide irradiation (2 × 6) surface reconstruction of GaAs (001) obtained by hydrogen sulfide irradiation Japanese Journal of Applied Physics, Part 2: Letters, 35, 11 SUPPL. B, L1498-L1500 Japanese Journal of Applied Physics, Part 2: Letters, 35, 11 SUPPL. B, L1498-L1500 Japanese Journal of Applied Physics, Part 2: Letters, 35, 11 SUPPL. B, L1498-L1500 1996 英語 公開
Y. Yamada; T. Mishina; Y. Masumoto; Y. Kawakami; S. Yamaguchi; K. Ichino; S. Fujita; S. Fujita; T. Taguchi Y. Yamada; T. Mishina; Y. Masumoto; Y. Kawakami; S. Yamaguchi; K. Ichino; S. Fujita; S. Fujita; T. Taguchi Y. Yamada; T. Mishina; Y. Masumoto; Y. Kawakami; S. Yamaguchi; K. Ichino; S. Fujita; S. Fujita; T. Taguchi Time-resolved spectroscopy of biexciton luminescence in ZnxCd1-xSe-ZnSySe1-y multiple quantum wells Time-resolved spectroscopy of biexciton luminescence in ZnxCd1-xSe-ZnSySe1-y multiple quantum wells Time-resolved spectroscopy of biexciton luminescence in ZnxCd1-xSe-ZnSySe1-y multiple quantum wells Physical Review B, 51, 4, 2596-2599 Physical Review B, 51, 4, 2596-2599 Physical Review B, 51, 4, 2596-2599 1995 英語 公開
Jun Suda; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita Jun Suda; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita Jun Suda; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita Growth of ZnSe/ZnMgSSe quantum well structures by metalorganic molecular beam epitaxy under in situ observation of reflection high energy electron diffraction intensity oscillation Growth of ZnSe/ZnMgSSe quantum well structures by metalorganic molecular beam epitaxy under in situ observation of reflection high energy electron diffraction intensity oscillation Growth of ZnSe/ZnMgSSe quantum well structures by metalorganic molecular beam epitaxy under in situ observation of reflection high energy electron diffraction intensity oscillation Journal of Crystal Growth, 150, 1 -4 pt 2, 738-742 Journal of Crystal Growth, 150, 1 -4 pt 2, 738-742 Journal of Crystal Growth, 150, 1 -4 pt 2, 738-742 1995 英語 公開
Y. Yamada; T. Mishina; Y. Masumoto; Y. Kawakami; J. Suda; S. Fujita; S. Fujita Y. Yamada; T. Mishina; Y. Masumoto; Y. Kawakami; J. Suda; S. Fujita; S. Fujita Y. Yamada; T. Mishina; Y. Masumoto; Y. Kawakami; J. Suda; S. Fujita; S. Fujita Time-resolved nonlinear luminescence of biexcitons in ZnSe-ZnxMg1-xSySe1-y single quantum wells Time-resolved nonlinear luminescence of biexcitons in ZnSe-ZnxMg1-xSySe1-y single quantum wells Time-resolved nonlinear luminescence of biexcitons in ZnSe-ZnxMg1-xSySe1-y single quantum wells Physical Review B, 52, 4, R2289-R2292 Physical Review B, 52, 4, R2289-R2292 Physical Review B, 52, 4, R2289-R2292 1995 英語 公開
Herve Dumont; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita Herve Dumont; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita Herve Dumont; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita Recombination dynamics in Zn<sub>x</sub>Cd<sub>1-x</sub>S single quantum well grown by photoassisted metalorganic vapour phase epitaxy by time-resolved photoluminescence spectroscopy Recombination dynamics in Zn<sub>x</sub>Cd<sub>1-x</sub>S single quantum well grown by photoassisted metalorganic vapour phase epitaxy by time-resolved photoluminescence spectroscopy Recombination dynamics in Zn<sub>x</sub>Cd<sub>1-x</sub>S single quantum well grown by photoassisted metalorganic vapour phase epitaxy by time-resolved photoluminescence spectroscopy Japanese Journal of Applied Physics, Part 2: Letters, 34, 10 B, L1336-L1339 Japanese Journal of Applied Physics, Part 2: Letters, 34, 10 B, L1336-L1339 Japanese Journal of Applied Physics, Part 2: Letters, 34, 10 B, L1336-L1339 1995 英語 公開
Y. Kawakami; M. Funato; S. Fujita; S. Fujita; Y. Yamada; Y. Masumoto Y. Kawakami; M. Funato; S. Fujita; S. Fujita; Y. Yamada; Y. Masumoto Y. Kawakami; M. Funato; S. Fujita; S. Fujita; Y. Yamada; Y. Masumoto Localized excitons in cubic Zn1-xCdxS lattice matched to GaAs Localized excitons in cubic Zn1-xCdxS lattice matched to GaAs Localized excitons in cubic Zn1-xCdxS lattice matched to GaAs Physical Review B, 50, 19, 14655-14658 Physical Review B, 50, 19, 14655-14658 Physical Review B, 50, 19, 14655-14658 1994 英語 公開
Y. Kawakami; T. Toyoda; Sz. Fujita; Sg. Fujita Y. Kawakami; T. Toyoda; Sz. Fujita; Sg. Fujita Y. Kawakami; T. Toyoda; Sz. Fujita; Sg. Fujita Effect of photo-irradiation on the growth of ZnSe in metalorganic molecular beam epitaxy Effect of photo-irradiation on the growth of ZnSe in metalorganic molecular beam epitaxy Effect of photo-irradiation on the growth of ZnSe in metalorganic molecular beam epitaxy Journal of Crystal Growth, 136, 1-4, 371-375 Journal of Crystal Growth, 136, 1-4, 371-375 Journal of Crystal Growth, 136, 1-4, 371-375 1994 英語 公開
Y. Kawakami; J. Simpson; K.A. Prior; B.C. Cavenett Y. Kawakami; J. Simpson; K.A. Prior; B.C. Cavenett Y. Kawakami; J. Simpson; K.A. Prior; B.C. Cavenett Photoluminescence excitation spectroscopy of the dense exciton gas involved in the lasing transition in ZnSe epitaxial layers Photoluminescence excitation spectroscopy of the dense exciton gas involved in the lasing transition in ZnSe epitaxial layers Photoluminescence excitation spectroscopy of the dense exciton gas involved in the lasing transition in ZnSe epitaxial layers IEEE Photonics Technology Letters, 6, 4, 505-508 IEEE Photonics Technology Letters, 6, 4, 505-508 IEEE Photonics Technology Letters, 6, 4, 505-508 1994 英語 公開
S. Yamaguchi; T. Shinzato; K. Ichino; Y. Kawakami; Sz. Fujita; Sg. Fujita S. Yamaguchi; T. Shinzato; K. Ichino; Y. Kawakami; Sz. Fujita; Sg. Fujita S. Yamaguchi; T. Shinzato; K. Ichino; Y. Kawakami; Sz. Fujita; Sg. Fujita Photopumped lasing properties in ZnCdSe-ZnSSe multiple quantum wells Photopumped lasing properties in ZnCdSe-ZnSSe multiple quantum wells Photopumped lasing properties in ZnCdSe-ZnSSe multiple quantum wells Journal of Luminescence, 59, 6, 341-348 Journal of Luminescence, 59, 6, 341-348 Journal of Luminescence, 59, 6, 341-348 1994 英語 公開
Yoichi Yamada; Tomobumi Mishina; Yasuaki Masumoto; Yoichi Kawakami; Shigeo Yamaguchi; Kunio Ichino; Shizuo Fujita; Shigeo Fujita; Tsunemasa Taguchi Yoichi Yamada; Tomobumi Mishina; Yasuaki Masumoto; Yoichi Kawakami; Shigeo Yamaguchi; Kunio Ichino; Shizuo Fujita; Shigeo Fujita; Tsunemasa Taguchi Yoichi Yamada; Tomobumi Mishina; Yasuaki Masumoto; Yoichi Kawakami; Shigeo Yamaguchi; Kunio Ichino; Shizuo Fujita; Shigeo Fujita; Tsunemasa Taguchi Time-resolved spectroscopy of biexciton luminescence in wide-bandgap II-VI quantum wells Time-resolved spectroscopy of biexciton luminescence in wide-bandgap II-VI quantum wells Time-resolved spectroscopy of biexciton luminescence in wide-bandgap II-VI quantum wells Superlattices and Microstructures, 15, 1, 33-36 Superlattices and Microstructures, 15, 1, 33-36 Superlattices and Microstructures, 15, 1, 33-36 1994 英語 公開
Y. Kawakami; I. Hauksson; J. Simpson; H. Stewart; I. Galbraith; K.A. Prior; B.C. Cavenett Y. Kawakami; I. Hauksson; J. Simpson; H. Stewart; I. Galbraith; K.A. Prior; B.C. Cavenett Y. Kawakami; I. Hauksson; J. Simpson; H. Stewart; I. Galbraith; K.A. Prior; B.C. Cavenett Photoluminescence excitation spectroscopy of the lasing transition in ZnSe-(Zn,Cd)Se quantum wells Photoluminescence excitation spectroscopy of the lasing transition in ZnSe-(Zn,Cd)Se quantum wells Photoluminescence excitation spectroscopy of the lasing transition in ZnSe-(Zn,Cd)Se quantum wells Journal of Crystal Growth, 138, 1-4, 759-763 Journal of Crystal Growth, 138, 1-4, 759-763 Journal of Crystal Growth, 138, 1-4, 759-763 1994 英語 公開
K. Ichino; T. Onishi; Y. Kawakami; S. Fujita; S. Fujita K. Ichino; T. Onishi; Y. Kawakami; S. Fujita; S. Fujita K. Ichino; T. Onishi; Y. Kawakami; S. Fujita; S. Fujita Growth of ZnS and ZnCdSSe alloys on GaP using an elemental sulfur source by molecular beam epitaxy Growth of ZnS and ZnCdSSe alloys on GaP using an elemental sulfur source by molecular beam epitaxy Growth of ZnS and ZnCdSSe alloys on GaP using an elemental sulfur source by molecular beam epitaxy Journal of Crystal Growth, 138, 1-4, 28-34 Journal of Crystal Growth, 138, 1-4, 28-34 Journal of Crystal Growth, 138, 1-4, 28-34 1994 英語 公開
Jun Suda; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita Jun Suda; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita Jun Suda; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita Gas-source molecular beam epitaxial growth of (Zn,Mg)(S,Se) using bis-methylcyclopentadienyl-magnesium and hydrogen sulfide Gas-source molecular beam epitaxial growth of (Zn,Mg)(S,Se) using bis-methylcyclopentadienyl-magnesium and hydrogen sulfide Gas-source molecular beam epitaxial growth of (Zn,Mg)(S,Se) using bis-methylcyclopentadienyl-magnesium and hydrogen sulfide Japanese Journal of Applied Physics, Part 2: Letters, 33, 3 A, L290-L293 Japanese Journal of Applied Physics, Part 2: Letters, 33, 3 A, L290-L293 Japanese Journal of Applied Physics, Part 2: Letters, 33, 3 A, L290-L293 1994 英語 公開
Y. Kawakami; I. Hauksson; H. Stewart; J. Simpson; I. Galbraith; K.A. Prior; B.C. Cavenett Y. Kawakami; I. Hauksson; H. Stewart; J. Simpson; I. Galbraith; K.A. Prior; B.C. Cavenett Y. Kawakami; I. Hauksson; H. Stewart; J. Simpson; I. Galbraith; K.A. Prior; B.C. Cavenett Exciton-related lasing mechanism in ZnSe-(Zn,Cd)Se multiple quantum wells Exciton-related lasing mechanism in ZnSe-(Zn,Cd)Se multiple quantum wells Exciton-related lasing mechanism in ZnSe-(Zn,Cd)Se multiple quantum wells Physical Review B, 48, 16, 11994-12000 Physical Review B, 48, 16, 11994-12000 Physical Review B, 48, 16, 11994-12000 1993 英語 公開
Shizuo Fujita; Tomoyuki Yoshie; Kazumasa Kohama; Yoichi Kawakami; Shigeo Fujita Shizuo Fujita; Tomoyuki Yoshie; Kazumasa Kohama; Yoichi Kawakami; Shigeo Fujita Shizuo Fujita; Tomoyuki Yoshie; Kazumasa Kohama; Yoichi Kawakami; Shigeo Fujita Carrier injection characteristics in diamine/ZnSe organic-inorganic thin-film heterostructures for blue electroluminescence Carrier injection characteristics in diamine/ZnSe organic-inorganic thin-film heterostructures for blue electroluminescence Carrier injection characteristics in diamine/ZnSe organic-inorganic thin-film heterostructures for blue electroluminescence Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 32, 4, 1691-1695 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 32, 4, 1691-1695 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 32, 4, 1691-1695 1993 英語 公開
S.Y. Wang; J. Simpson; H. Stewart; S.J.A. Adams; I. Hauksson; Y. Kawakami; M.R. Taghizadeh; K.A. Prior; B.C. Cavenett S.Y. Wang; J. Simpson; H. Stewart; S.J.A. Adams; I. Hauksson; Y. Kawakami; M.R. Taghizadeh; K.A. Prior; B.C. Cavenett S.Y. Wang; J. Simpson; H. Stewart; S.J.A. Adams; I. Hauksson; Y. Kawakami; M.R. Taghizadeh; K.A. Prior; B.C. Cavenett Photovoltage and carrier concentration profiles of ZnSe/ZnCdSe quantum well laser diodes Photovoltage and carrier concentration profiles of ZnSe/ZnCdSe quantum well laser diodes Photovoltage and carrier concentration profiles of ZnSe/ZnCdSe quantum well laser diodes Physica B: Physics of Condensed Matter, 185, 1-4, 508-511 Physica B: Physics of Condensed Matter, 185, 1-4, 508-511 Physica B: Physics of Condensed Matter, 185, 1-4, 508-511 1993 英語 公開
Y. Kawakami; S.Y. Wang; J. Simpson; I. Hauksson; S.J.A. Adams; H. Stewart; B.C. Cavenett; K.A. Prior Y. Kawakami; S.Y. Wang; J. Simpson; I. Hauksson; S.J.A. Adams; H. Stewart; B.C. Cavenett; K.A. Prior Y. Kawakami; S.Y. Wang; J. Simpson; I. Hauksson; S.J.A. Adams; H. Stewart; B.C. Cavenett; K.A. Prior II-VI quantum-confined Stark effect modulators II-VI quantum-confined Stark effect modulators II-VI quantum-confined Stark effect modulators Physica B: Physics of Condensed Matter, 185, 1-4, 496-499 Physica B: Physics of Condensed Matter, 185, 1-4, 496-499 Physica B: Physics of Condensed Matter, 185, 1-4, 496-499 1993 英語 公開
T. Taguchi; Y. Kawakami; Y. Yamada T. Taguchi; Y. Kawakami; Y. Yamada T. Taguchi; Y. Kawakami; Y. Yamada Interface properties and the effect of strain of ZnSe/ZnS strained-layer superlattices Interface properties and the effect of strain of ZnSe/ZnS strained-layer superlattices Interface properties and the effect of strain of ZnSe/ZnS strained-layer superlattices Physica B: Physics of Condensed Matter, 191, 1-2, 23-44 Physica B: Physics of Condensed Matter, 191, 1-2, 23-44 Physica B: Physics of Condensed Matter, 191, 1-2, 23-44 1993 英語 公開
S. Fujita; Y. Kawakami; S. Fujita S. Fujita; Y. Kawakami; S. Fujita S. Fujita; Y. Kawakami; S. Fujita Fabrication of II-VI semiconductor quantum well structures in ZnCdSSe alloy systems Fabrication of II-VI semiconductor quantum well structures in ZnCdSSe alloy systems Fabrication of II-VI semiconductor quantum well structures in ZnCdSSe alloy systems Physica B: Physics of Condensed Matter, 191, 1-2, 57-70 Physica B: Physics of Condensed Matter, 191, 1-2, 57-70 Physica B: Physics of Condensed Matter, 191, 1-2, 57-70 1993 英語 公開
Y. Kawakami; I. Hauksson; H. Stewart; J. Simpson; I. Galbraith; K.A. Prior; B.C. Cavenett Y. Kawakami; I. Hauksson; H. Stewart; J. Simpson; I. Galbraith; K.A. Prior; B.C. Cavenett Y. Kawakami; I. Hauksson; H. Stewart; J. Simpson; I. Galbraith; K.A. Prior; B.C. Cavenett Exciton-related lasing mechanism in ZnSe-(Zn, Cd)Se multiple quantum wells Exciton-related lasing mechanism in ZnSe-(Zn, Cd)Se multiple quantum wells Exciton-related lasing mechanism in ZnSe-(Zn, Cd)Se multiple quantum wells Journal De Physique. IV : JP, 3, 5, 83-90 Journal De Physique. IV : JP, 3, 5, 83-90 Journal De Physique. IV : JP, 3, 5, 83-90 1993 英語 公開
S.Y. Wang; Y. Kawakami; J. Simpson; H. Stewart; K.A. Prior; B.C. Cavenett S.Y. Wang; Y. Kawakami; J. Simpson; H. Stewart; K.A. Prior; B.C. Cavenett S.Y. Wang; Y. Kawakami; J. Simpson; H. Stewart; K.A. Prior; B.C. Cavenett ZnSe-ZnCdSe quantum confined Stark effect modulators ZnSe-ZnCdSe quantum confined Stark effect modulators ZnSe-ZnCdSe quantum confined Stark effect modulators Applied Physics Letters, 62, 15, 1715-1717 Applied Physics Letters, 62, 15, 1715-1717 Applied Physics Letters, 62, 15, 1715-1717 1993 英語 公開
K. Ichino; K. Iwami; Y. Kawakami; S.Z. Fujita; S.G. Fujita K. Ichino; K. Iwami; Y. Kawakami; S.Z. Fujita; S.G. Fujita K. Ichino; K. Iwami; Y. Kawakami; S.Z. Fujita; S.G. Fujita Ultraviolet semiconductor laser structures with pseudomorphic ZnCdSSe quaternary alloys on GaP substrates Ultraviolet semiconductor laser structures with pseudomorphic ZnCdSSe quaternary alloys on GaP substrates Ultraviolet semiconductor laser structures with pseudomorphic ZnCdSSe quaternary alloys on GaP substrates Journal of Electronic Materials, 22, 5, 445-452 Journal of Electronic Materials, 22, 5, 445-452 Journal of Electronic Materials, 22, 5, 445-452 1993 英語 公開
Yoichi Kawakami; Brian C. Cavenett; Kunio Ichino; Shizuo Fujita; Shigeo Fujita Yoichi Kawakami; Brian C. Cavenett; Kunio Ichino; Shizuo Fujita; Shigeo Fujita Yoichi Kawakami; Brian C. Cavenett; Kunio Ichino; Shizuo Fujita; Shigeo Fujita Photoluminescence excitation spectroscopy of the lasing transition in Zn<sub>0.85</sub>Cd<sub>0.15</sub>Se-ZnS<sub>0.08</sub>Se<sub>0.92</sub> multiple quantum wells Photoluminescence excitation spectroscopy of the lasing transition in Zn<sub>0.85</sub>Cd<sub>0.15</sub>Se-ZnS<sub>0.08</sub>Se<sub>0.92</sub> multiple quantum wells Photoluminescence excitation spectroscopy of the lasing transition in Zn<sub>0.85</sub>Cd<sub>0.15</sub>Se-ZnS<sub>0.08</sub>Se<sub>0.92</sub> multiple quantum wells Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 32, 5 B, 730-733 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 32, 5 B, 730-733 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 32, 5 B, 730-733 1993 英語 公開
Kunio Ichino; Toshikazu Onishi; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita Kunio Ichino; Toshikazu Onishi; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita Kunio Ichino; Toshikazu Onishi; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita Near-UV electroluminescence from a ZnCdSSe/ZnSSe metal-insulator-semiconductor diode on GaP grown by molecular beam epitaxy Near-UV electroluminescence from a ZnCdSSe/ZnSSe metal-insulator-semiconductor diode on GaP grown by molecular beam epitaxy Near-UV electroluminescence from a ZnCdSSe/ZnSSe metal-insulator-semiconductor diode on GaP grown by molecular beam epitaxy Japanese Journal of Applied Physics, Part 2: Letters, 32, 9 A, L1200-L1202 Japanese Journal of Applied Physics, Part 2: Letters, 32, 9 A, L1200-L1202 Japanese Journal of Applied Physics, Part 2: Letters, 32, 9 A, L1200-L1202 1993 英語 公開
S. Fujita; Y.-H. Wu; Y. Kawakami; S. Fujita S. Fujita; Y.-H. Wu; Y. Kawakami; S. Fujita S. Fujita; Y.-H. Wu; Y. Kawakami; S. Fujita Metalorganic molecular beam epitaxial growth and characterization of CdSe/ZnSe strained-layer single quantum wells and superlattices on GaAs substrates Metalorganic molecular beam epitaxial growth and characterization of CdSe/ZnSe strained-layer single quantum wells and superlattices on GaAs substrates Metalorganic molecular beam epitaxial growth and characterization of CdSe/ZnSe strained-layer single quantum wells and superlattices on GaAs substrates Journal of Applied Physics, 72, 11, 5233-5239 Journal of Applied Physics, 72, 11, 5233-5239 Journal of Applied Physics, 72, 11, 5233-5239 1992 英語 公開
S.Y. Wang; I. Hauksson; J. Simpson; H. Stewart; S.J.A. Adams; J.M. Wallace; Y. Kawakami; K.A. Prior; B.C. Cavenett S.Y. Wang; I. Hauksson; J. Simpson; H. Stewart; S.J.A. Adams; J.M. Wallace; Y. Kawakami; K.A. Prior; B.C. Cavenett S.Y. Wang; I. Hauksson; J. Simpson; H. Stewart; S.J.A. Adams; J.M. Wallace; Y. Kawakami; K.A. Prior; B.C. Cavenett Blue stimulated emission from a ZnSe p-n diode at low temperature Blue stimulated emission from a ZnSe p-n diode at low temperature Blue stimulated emission from a ZnSe p-n diode at low temperature Applied Physics Letters, 61, 5, 506-508 Applied Physics Letters, 61, 5, 506-508 Applied Physics Letters, 61, 5, 506-508 1992 英語 公開
Yi-hong Wu; Kunio Ichino; Yoichi Kawakami; Shizuo Fuita; Shizuo Fujita Yi-hong Wu; Kunio Ichino; Yoichi Kawakami; Shizuo Fuita; Shizuo Fujita Yi-hong Wu; Kunio Ichino; Yoichi Kawakami; Shizuo Fuita; Shizuo Fujita Estimation of critical thicknesses and band lineups in ZnCdSe/ZnSSe strained-layer system for design of carrier confinement quantum weii structures Estimation of critical thicknesses and band lineups in ZnCdSe/ZnSSe strained-layer system for design of carrier confinement quantum weii structures Estimation of critical thicknesses and band lineups in ZnCdSe/ZnSSe strained-layer system for design of carrier confinement quantum weii structures Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 31, 6 A, 1737-1744 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 31, 6 A, 1737-1744 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 31, 6 A, 1737-1744 1992 英語 公開
Yi-hong Wu; Kunio Ichino; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita Yi-hong Wu; Kunio Ichino; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita Yi-hong Wu; Kunio Ichino; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita Optical properties of ZnCdSe/ZnSSe strained-layer quantum wells Optical properties of ZnCdSe/ZnSSe strained-layer quantum wells Optical properties of ZnCdSe/ZnSSe strained-layer quantum wells Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 31, 11, 3608-3614 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 31, 11, 3608-3614 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 31, 11, 3608-3614 1992 英語 公開
K. Ichino; Y.-h. Wu; Y. Kawakami; S. Fujita; S. Fujita K. Ichino; Y.-h. Wu; Y. Kawakami; S. Fujita; S. Fujita K. Ichino; Y.-h. Wu; Y. Kawakami; S. Fujita; S. Fujita Fabrication of ZnCdSSe alloys by MOMBE and their applications for double-hetero and quantum-well structures Fabrication of ZnCdSSe alloys by MOMBE and their applications for double-hetero and quantum-well structures Fabrication of ZnCdSSe alloys by MOMBE and their applications for double-hetero and quantum-well structures Journal of Crystal Growth, 117, 1-4, 527-531 Journal of Crystal Growth, 117, 1-4, 527-531 Journal of Crystal Growth, 117, 1-4, 527-531 1992 英語 公開
Y. Kawakami; T. Toyoda; Y.-H. Wu; S. Fujita; S. Fujita Y. Kawakami; T. Toyoda; Y.-H. Wu; S. Fujita; S. Fujita Y. Kawakami; T. Toyoda; Y.-H. Wu; S. Fujita; S. Fujita Effects of surface pre-treatment and hydrogen on ALE of ZnSe on GaAs in MOMBE Effects of surface pre-treatment and hydrogen on ALE of ZnSe on GaAs in MOMBE Effects of surface pre-treatment and hydrogen on ALE of ZnSe on GaAs in MOMBE Journal of Crystal Growth, 107, 1-4, 1072-1073 Journal of Crystal Growth, 107, 1-4, 1072-1073 Journal of Crystal Growth, 107, 1-4, 1072-1073 1991 英語 公開
Takahiro Ohnakado; Yi-hong Wu; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita Takahiro Ohnakado; Yi-hong Wu; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita Takahiro Ohnakado; Yi-hong Wu; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita On the properties of ZnSe/(NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub>-pretreated GaAs heterointerfaces On the properties of ZnSe/(NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub>-pretreated GaAs heterointerfaces On the properties of ZnSe/(NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub>-pretreated GaAs heterointerfaces Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 30, 8, 1668-1669 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 30, 8, 1668-1669 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 30, 8, 1668-1669 1991 英語 公開
Y.-h. Wu; Y. Kawakami; S. Fujita; S. Fujita Y.-h. Wu; Y. Kawakami; S. Fujita; S. Fujita Y.-h. Wu; Y. Kawakami; S. Fujita; S. Fujita Growth and characterization of ZnSe on (NH<sub>4</sub>) <sub>2</sub>S<sub>x</sub>-treated GaAs substrates: effect of GaAs surface microstructure on the growth rate of ZnSe Growth and characterization of ZnSe on (NH<sub>4</sub>) <sub>2</sub>S<sub>x</sub>-treated GaAs substrates: effect of GaAs surface microstructure on the growth rate of ZnSe Growth and characterization of ZnSe on (NH<sub>4</sub>) <sub>2</sub>S<sub>x</sub>-treated GaAs substrates: effect of GaAs surface microstructure on the growth rate of ZnSe Journal of Crystal Growth, 111, 1-4, 757-761 Journal of Crystal Growth, 111, 1-4, 757-761 Journal of Crystal Growth, 111, 1-4, 757-761 1991 英語 公開
Y.-h. Wu; K. Ichino; Y. Kawakami; S. Fujita; S. Fujita Y.-h. Wu; K. Ichino; Y. Kawakami; S. Fujita; S. Fujita Y.-h. Wu; K. Ichino; Y. Kawakami; S. Fujita; S. Fujita Growth of II-VI semiconductor quantum well structures under in situ RHEED observations Growth of II-VI semiconductor quantum well structures under in situ RHEED observations Growth of II-VI semiconductor quantum well structures under in situ RHEED observations Journal of Crystal Growth, 115, 1-4, 664-669 Journal of Crystal Growth, 115, 1-4, 664-669 Journal of Crystal Growth, 115, 1-4, 664-669 1991 英語 公開
Yoichi Kawakami; Shigeo Yamaguchi; Yi-hong Wu; Kunio Ichino; Shizuo Fujita; Shigeo Fujita Yoichi Kawakami; Shigeo Yamaguchi; Yi-hong Wu; Kunio Ichino; Shizuo Fujita; Shigeo Fujita Yoichi Kawakami; Shigeo Yamaguchi; Yi-hong Wu; Kunio Ichino; Shizuo Fujita; Shigeo Fujita Optically pumped blue-green laser operation above room-temperature in Zn<sub>0.80</sub>Cd<sub>0.20</sub>Se-ZnS<sub>0.08</sub>Se<sub>0.92</sub> multiple quantum well structures grown by metalorganic molecular beam epitaxy Optically pumped blue-green laser operation above room-temperature in Zn<sub>0.80</sub>Cd<sub>0.20</sub>Se-ZnS<sub>0.08</sub>Se<sub>0.92</sub> multiple quantum well structures grown by metalorganic molecular beam epitaxy Optically pumped blue-green laser operation above room-temperature in Zn<sub>0.80</sub>Cd<sub>0.20</sub>Se-ZnS<sub>0.08</sub>Se<sub>0.92</sub> multiple quantum well structures grown by metalorganic molecular beam epitaxy Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 30, 4, 605-607 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 30, 4, 605-607 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 30, 4, 605-607 1991 英語 公開
Yi-hong Wu; Takashi Toyoda; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita Yi-hong Wu; Takashi Toyoda; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita Yi-hong Wu; Takashi Toyoda; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita Atomic layer epitaxy of ZnS on GaAs substrates by metalorganic molecular beam epitaxy Atomic layer epitaxy of ZnS on GaAs substrates by metalorganic molecular beam epitaxy Atomic layer epitaxy of ZnS on GaAs substrates by metalorganic molecular beam epitaxy Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 29, 5, 727-730 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 29, 5, 727-730 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 29, 5, 727-730 1990 英語 公開
Yasuyuki Endoh; Yoichi Kawakami; Tsunemasa Taguchi; Akio Hiraki Yasuyuki Endoh; Yoichi Kawakami; Tsunemasa Taguchi; Akio Hiraki Yasuyuki Endoh; Yoichi Kawakami; Tsunemasa Taguchi; Akio Hiraki Structural and photoluminescence characterization of CdS/GaAs films and CdS-ZnS strained-layer superlattices grown by low-pressure MOCVD method Structural and photoluminescence characterization of CdS/GaAs films and CdS-ZnS strained-layer superlattices grown by low-pressure MOCVD method Structural and photoluminescence characterization of CdS/GaAs films and CdS-ZnS strained-layer superlattices grown by low-pressure MOCVD method Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 27, 11, 2199-2202 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 27, 11, 2199-2202 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 27, 11, 2199-2202 1988 英語 公開
Y. Kawakami; A. Sawada; K. Kurisu; Z. Kawazu; T. Tuguchi; A. Hiraki Y. Kawakami; A. Sawada; K. Kurisu; Z. Kawazu; T. Tuguchi; A. Hiraki Y. Kawakami; A. Sawada; K. Kurisu; Z. Kawazu; T. Tuguchi; A. Hiraki Excitonic and edge emission in MOCVD-grown epitaxial films and bulk crystal of ZnS Excitonic and edge emission in MOCVD-grown epitaxial films and bulk crystal of ZnS Excitonic and edge emission in MOCVD-grown epitaxial films and bulk crystal of ZnS Journal of Luminescence, 40-41, C, 147-148 Journal of Luminescence, 40-41, C, 147-148 Journal of Luminescence, 40-41, C, 147-148 1988 英語 公開
Y. Kawakami; T. Taguchi; A. Hiraki Y. Kawakami; T. Taguchi; A. Hiraki Y. Kawakami; T. Taguchi; A. Hiraki Excitonic and edge emissions in MOCVD-grown ZnS films and ZnSe-ZnS superlattices Excitonic and edge emissions in MOCVD-grown ZnS films and ZnSe-ZnS superlattices Excitonic and edge emissions in MOCVD-grown ZnS films and ZnSe-ZnS superlattices Journal of Crystal Growth, 89, 2-3, 331-338 Journal of Crystal Growth, 89, 2-3, 331-338 Journal of Crystal Growth, 89, 2-3, 331-338 1988 英語 公開
Y. Kawakami; T. Taguchi; A. Hiraki Y. Kawakami; T. Taguchi; A. Hiraki Y. Kawakami; T. Taguchi; A. Hiraki Interface characteristics and excitonic emissions in ZnSe-ZnSSe superlattices fabricated by low-pressure MOCVD Interface characteristics and excitonic emissions in ZnSe-ZnSSe superlattices fabricated by low-pressure MOCVD Interface characteristics and excitonic emissions in ZnSe-ZnSSe superlattices fabricated by low-pressure MOCVD Applied Surface Science, 33-34, C, 1059-1065 Applied Surface Science, 33-34, C, 1059-1065 Applied Surface Science, 33-34, C, 1059-1065 1988 英語 公開
M. Ekawa; Y. Kawakami; T. Taguchi; A. Hiraki M. Ekawa; Y. Kawakami; T. Taguchi; A. Hiraki M. Ekawa; Y. Kawakami; T. Taguchi; A. Hiraki Fabrication and photoluminescence properties of ZnTe and CdZnTe films by low pressure metalorganic chemical-vapour deposition Fabrication and photoluminescence properties of ZnTe and CdZnTe films by low pressure metalorganic chemical-vapour deposition Fabrication and photoluminescence properties of ZnTe and CdZnTe films by low pressure metalorganic chemical-vapour deposition Journal of Crystal Growth, 93, 1-4, 667-672 Journal of Crystal Growth, 93, 1-4, 667-672 Journal of Crystal Growth, 93, 1-4, 667-672 1988 英語 公開
K. Yoichi; T. Tsunemasa; S. Mamoru; H. Akio K. Yoichi; T. Tsunemasa; S. Mamoru; H. Akio K. Yoichi; T. Tsunemasa; S. Mamoru; H. Akio Characterization of the interface of ZnSe-ZnS strained-layer superlattices by MeV transmission electron microscopy and ion-channeling Characterization of the interface of ZnSe-ZnS strained-layer superlattices by MeV transmission electron microscopy and ion-channeling Characterization of the interface of ZnSe-ZnS strained-layer superlattices by MeV transmission electron microscopy and ion-channeling Nuclear Inst. and Methods in Physics Research, B, 33, 1-4, 603-606 Nuclear Inst. and Methods in Physics Research, B, 33, 1-4, 603-606 Nuclear Inst. and Methods in Physics Research, B, 33, 1-4, 603-606 1988 英語 公開
Y. Kawakami; T. Taguchi; A. Hiraki Y. Kawakami; T. Taguchi; A. Hiraki Y. Kawakami; T. Taguchi; A. Hiraki Effects of strain and temperature on excitonic emissions in ZnSeZnS strained-layer superlattices grown by low-pressure MOCVD Effects of strain and temperature on excitonic emissions in ZnSeZnS strained-layer superlattices grown by low-pressure MOCVD Effects of strain and temperature on excitonic emissions in ZnSeZnS strained-layer superlattices grown by low-pressure MOCVD Journal of Crystal Growth, 93, 1-4, 714-719 Journal of Crystal Growth, 93, 1-4, 714-719 Journal of Crystal Growth, 93, 1-4, 714-719 1988 英語 公開
Y. Kawakami; T. Taguchi; A. Hiraki Y. Kawakami; T. Taguchi; A. Hiraki Y. Kawakami; T. Taguchi; A. Hiraki Characterization of epitaxial ZnS films fabricated by sputtering in controlled H<sub>2</sub>S vapor Characterization of epitaxial ZnS films fabricated by sputtering in controlled H<sub>2</sub>S vapor Characterization of epitaxial ZnS films fabricated by sputtering in controlled H<sub>2</sub>S vapor Surface Science, 168, 1-3, 571-576 Surface Science, 168, 1-3, 571-576 Surface Science, 168, 1-3, 571-576 1986 英語 公開
Yoichi Kawakami; Tsunemasa Taguchi; Akio Hiraki Yoichi Kawakami; Tsunemasa Taguchi; Akio Hiraki Yoichi Kawakami; Tsunemasa Taguchi; Akio Hiraki TRANSMISSION ELECTRON MICROSCOPE AND PHOTOLUMINESCENCE STUDIES ZnS CRYSTALLINE FILMS GROWN BY LOW-PRESSURE MOCVD. TRANSMISSION ELECTRON MICROSCOPE AND PHOTOLUMINESCENCE STUDIES ZnS CRYSTALLINE FILMS GROWN BY LOW-PRESSURE MOCVD. TRANSMISSION ELECTRON MICROSCOPE AND PHOTOLUMINESCENCE STUDIES ZnS CRYSTALLINE FILMS GROWN BY LOW-PRESSURE MOCVD. Technology Reports of the Osaka University, 36, 1844-1864, 335-343 Technology Reports of the Osaka University, 36, 1844-1864, 335-343 Technology Reports of the Osaka University, 36, 1844-1864, 335-343 1986 英語 公開
A. Hiraki; Y. Kawakami; T. Kawano; M. Hayashi; M. Tokumura; T. Miyasato A. Hiraki; Y. Kawakami; T. Kawano; M. Hayashi; M. Tokumura; T. Miyasato A. Hiraki; Y. Kawakami; T. Kawano; M. Hayashi; M. Tokumura; T. Miyasato Low temperature process for preparing a diamond-like-carbon film from graphite by H<sub>2</sub>-gas chemical sputtering Low temperature process for preparing a diamond-like-carbon film from graphite by H<sub>2</sub>-gas chemical sputtering Low temperature process for preparing a diamond-like-carbon film from graphite by H<sub>2</sub>-gas chemical sputtering Nuclear Inst. and Methods in Physics Research, B, 7-8, PART 2, 479-480 Nuclear Inst. and Methods in Physics Research, B, 7-8, PART 2, 479-480 Nuclear Inst. and Methods in Physics Research, B, 7-8, PART 2, 479-480 1985 英語 公開
A. Hiraki; T. Kawano; Y. Kawakami; M. Hayashi; T. Miyasato A. Hiraki; T. Kawano; Y. Kawakami; M. Hayashi; T. Miyasato A. Hiraki; T. Kawano; Y. Kawakami; M. Hayashi; T. Miyasato Tetrahedral carbon film by hydrogen gas reactive rf-sputtering of graphite onto low temperature substrate Tetrahedral carbon film by hydrogen gas reactive rf-sputtering of graphite onto low temperature substrate Tetrahedral carbon film by hydrogen gas reactive rf-sputtering of graphite onto low temperature substrate Solid State Communications, 50, 8, 713-716 Solid State Communications, 50, 8, 713-716 Solid State Communications, 50, 8, 713-716 1984 英語 公開

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タイトル タイトル(日本語) タイトル(英語) 会議名 会議名(日本語) 会議名(英語) 主催者 主催者(日本語) 主催者(英語) 開催年月日 記述言語 会議種別 公開
Control of radiative recombination rate and polarization degree in nitride-based semiconductors Control of radiative recombination rate and polarization degree in nitride-based semiconductors Control of radiative recombination rate and polarization degree in nitride-based semiconductors the 11th International Conference on Nitride Semiconductors (ICNS-11) the 11th International Conference on Nitride Semiconductors (ICNS-11) the 11th International Conference on Nitride Semiconductors (ICNS-11) Peking University,State Key Laboratory of Artificial Micorstructure and Mesoscopic Physics,National Key Laboratory of ASIC, HSRI,Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Peking University,State Key Laboratory of Artificial Micorstructure and Mesoscopic Physics,National Key Laboratory of ASIC, HSRI,Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Peking University,State Key Laboratory of Artificial Micorstructure and Mesoscopic Physics,National Key Laboratory of ASIC, HSRI,Science and Technology on Monolithic Integrated Circuits and Modules Laboratory 2015/08/31 英語 口頭発表(招待・特別) 公開
Radiative and nonradiative recombination processes in Al-rich AlGaN-based materials Radiative and nonradiative recombination processes in Al-rich AlGaN-based materials Radiative and nonradiative recombination processes in Al-rich AlGaN-based materials 日本学術振興会第162委員会 日独西ワークショップ 日本学術振興会第162委員会 日独西ワークショップ 日本学術振興会 日本学術振興会 2015/07/12 英語 口頭発表(招待・特別) 公開
Recombination dynamics in nitride semiconductors Recombination dynamics in nitride semiconductors Recombination dynamics in nitride semiconductors 7th Asia-Pacific Workshop on Widegap Semiconductors 7th Asia-Pacific Workshop on Widegap Semiconductors 7th Asia-Pacific Workshop on Widegap Semiconductors APWS2015 APWS2015 APWS2015 2015/05/18 英語 口頭発表(基調) 公開
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GaN系発光デバイスの現状と展望 GaN系発光デバイスの現状と展望 日本真空学会産学連携委員会平成27年1月例会(第279回) 日本真空学会産学連携委員会平成27年1月例会(第279回) 日本真空学会 日本真空学会 2015/01/20 日本語 その他 公開
窒化物半導体の現状と将来展望 窒化物半導体の現状と将来展望 日本真空学会関西支部平成27年度第1回講演会 日本真空学会関西支部平成27年度第1回講演会 日本真空学会関西支部 日本真空学会関西支部 2015/01/16 日本語 公開講演、セミナー、チュートリアル、講習、講義 公開
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Semipolar faceting for InGaN-based polychromatic LEDs Semipolar faceting for InGaN-based polychromatic LEDs Semipolar faceting for InGaN-based polychromatic LEDs CLEO:2013 CLEO:2013 CLEO:2013 2013/06/13 英語 口頭発表(招待・特別) 公開
Determination of deformation potentials in GaN and AlN for the design of strained AlGaN-based quantum structures Determination of deformation potentials in GaN and AlN for the design of strained AlGaN-based quantum structures Determination of deformation potentials in GaN and AlN for the design of strained AlGaN-based quantum structures E-MRS E-MRS E-MRS 2013/05/28 英語 口頭発表(招待・特別) 公開
Impact of crystal orientation on InGaN-based efficient visible light emitters Impact of crystal orientation on InGaN-based efficient visible light emitters Impact of crystal orientation on InGaN-based efficient visible light emitters Conf. on LED and its industrial application '13 Conf. on LED and its industrial application '13 Conf. on LED and its industrial application '13 2013/04/23 英語 口頭発表(招待・特別) 公開
ナノ光励起による窒化物半導体の発光機構解明と制御へのアプローチ ナノ光励起による窒化物半導体の発光機構解明と制御へのアプローチ 第60回応用物理学会関係連合講演会 第60回応用物理学会関係連合講演会 応用物理学会 応用物理学会 2013/03/27 日本語 口頭発表(招待・特別) 公開
白色LEDの現状と次世代デバイスへのアプローチ -テーラーメイド固体照明を目指して- 白色LEDの現状と次世代デバイスへのアプローチ -テーラーメイド固体照明を目指して- 京都光技術研究会第3回光ものづくりセミナー -LEDの進展と広がるアプリケーション- 京都光技術研究会第3回光ものづくりセミナー -LEDの進展と広がるアプリケーション- 京都中小企業事業継続支援センター 京都中小企業事業継続支援センター 2012/12/19 日本語 公開講演、セミナー、チュートリアル、講習、講義 公開
Epitaxial growth of AlN and related alloys Epitaxial growth of AlN and related alloys Epitaxial growth of AlN and related alloys Collaborative Conf. on Crystal Growth Collaborative Conf. on Crystal Growth Collaborative Conf. on Crystal Growth 2012/12/11 英語 口頭発表(招待・特別) 公開
Approaches to efficient visible light emitters using semipolar InGaN quantum wells Approaches to efficient visible light emitters using semipolar InGaN quantum wells Approaches to efficient visible light emitters using semipolar InGaN quantum wells IUMRS-Intern. Conf. in Asia 2012 IUMRS-Intern. Conf. in Asia 2012 IUMRS-Intern. Conf. in Asia 2012 2012/08/29 英語 口頭発表(招待・特別) 公開
窒化物半導体発光デバイスの現状と挑戦-光物性の理解と制御によるアプローチ- 窒化物半導体発光デバイスの現状と挑戦-光物性の理解と制御によるアプローチ- 応用物理学会 応用電子物性分科会研究例会 窒化物半導体光デバイスの最前線~デバイスと光物性~ 応用物理学会 応用電子物性分科会研究例会 窒化物半導体光デバイスの最前線~デバイスと光物性~ 2012/06/14 日本語 口頭発表(基調) 公開
High quality AlGaN-based quantum wells for deep-ultraviolet emitters High quality AlGaN-based quantum wells for deep-ultraviolet emitters High quality AlGaN-based quantum wells for deep-ultraviolet emitters 16th Intern. Conf. on Metal Organic Vapor Phase Epitaxy 16th Intern. Conf. on Metal Organic Vapor Phase Epitaxy 16th Intern. Conf. on Metal Organic Vapor Phase Epitaxy 2012/05/22 英語 口頭発表(招待・特別) 公開
SNOM characterization on inhomogenity and defects in III-N alloy semiconductors SNOM characterization on inhomogenity and defects in III-N alloy semiconductors SNOM characterization on inhomogenity and defects in III-N alloy semiconductors Intern. Workshop on SMART Energy Harvesting and Saving with III-Nitride Semiconductors "Frontier of Nitride Semiconductor Alloy Photonics" Intern. Workshop on SMART Energy Harvesting and Saving with III-Nitride Semiconductors "Frontier of Nitride Semiconductor Alloy Photonics" Intern. Workshop on SMART Energy Harvesting and Saving with III-Nitride Semiconductors "Frontier of Nitride Semiconductor Alloy Photonics" 2012/05/10 英語 口頭発表(招待・特別) 公開
結晶からの発光を診る ~空間・時間分解分光による評価~ 結晶からの発光を診る ~空間・時間分解分光による評価~ 第4回窒化物半導体結晶成長講演会 第4回窒化物半導体結晶成長講演会 2012/04/28 日本語 口頭発表(招待・特別) 公開
Recombination dynamics in InGaN-based nanostructures by scanning near-field optical microscopy Recombination dynamics in InGaN-based nanostructures by scanning near-field optical microscopy Recombination dynamics in InGaN-based nanostructures by scanning near-field optical microscopy DYCE-ASIA Workshop DYCE-ASIA Workshop DYCE-ASIA Workshop 2012/04/23 英語 口頭発表(招待・特別) 公開
近接場分光による局在・輻射・非輻射再結合ダイナミクスの評価 近接場分光による局在・輻射・非輻射再結合ダイナミクスの評価 第59回応用物理学会関係連合講演会 第59回応用物理学会関係連合講演会 応用物理学会 応用物理学会 2012/03/15 日本語 口頭発表(招待・特別) 公開
Recombination dynamics in nitride semiconductors by scanning near-field optical microscopy Recombination dynamics in nitride semiconductors by scanning near-field optical microscopy Recombination dynamics in nitride semiconductors by scanning near-field optical microscopy 5th GCOE Intern. Symp. on Photonics and Electronics Science and Engineering 5th GCOE Intern. Symp. on Photonics and Electronics Science and Engineering 5th GCOE Intern. Symp. on Photonics and Electronics Science and Engineering 2012/03/08 英語 口頭発表(招待・特別) 公開
白色LEDの現状と新規白色LED開発へのアプローチ 白色LEDの現状と新規白色LED開発へのアプローチ 京都・島本・高槻広域 産学公連携 第2回グリーン・イノベーション研究会 京都・島本・高槻広域 産学公連携 第2回グリーン・イノベーション研究会 高槻商工会議所 高槻商工会議所 2012/02/14 日本語 口頭発表(基調) 公開
窒化物半導体による発光デバイスの最近の展開 窒化物半導体による発光デバイスの最近の展開 平成23年度応用物理学会関西支部シンポジウム「最先端の光研究とその将来」~次世代の光源・材料・デバイス開発の最新動向~ 平成23年度応用物理学会関西支部シンポジウム「最先端の光研究とその将来」~次世代の光源・材料・デバイス開発の最新動向~ 2011/11/18 日本語 口頭発表(招待・特別) 公開
AlNおよび高Al組成AlGaN量子井戸構造の有機金属気相成長 AlNおよび高Al組成AlGaN量子井戸構造の有機金属気相成長 第41回結晶成長国内会議 第41回結晶成長国内会議 2011/11/04 日本語 口頭発表(招待・特別) 公開
Visualization of the local carrier dynamics in InGaN SQW using dual probe SNOM Visualization of the local carrier dynamics in InGaN SQW using dual probe SNOM Visualization of the local carrier dynamics in InGaN SQW using dual probe SNOM 4th JST-DFG German-Japanese Nanophotonics Joint Research Project Meeting 4th JST-DFG German-Japanese Nanophotonics Joint Research Project Meeting 4th JST-DFG German-Japanese Nanophotonics Joint Research Project Meeting 2011/09/26 英語 口頭発表(招待・特別) 公開
Local carrier dynamics in InGaN quantum wells studied by scanning near-fi eld optical microscopy Local carrier dynamics in InGaN quantum wells studied by scanning near-fi eld optical microscopy Local carrier dynamics in InGaN quantum wells studied by scanning near-fi eld optical microscopy 2011 Optics+Photonics 2011 Optics+Photonics 2011 Optics+Photonics 2011/08/25 英語 口頭発表(招待・特別) 公開
Optical properties of Al-rich AIGaN quantum wells and their application to electron-beam pumped deep-UV emitters Optical properties of Al-rich AIGaN quantum wells and their application to electron-beam pumped deep-UV emitters Optical properties of Al-rich AIGaN quantum wells and their application to electron-beam pumped deep-UV emitters 9th Intern. Conf. on Nitride Semiconductors 9th Intern. Conf. on Nitride Semiconductors 9th Intern. Conf. on Nitride Semiconductors 2011/07/13 英語 口頭発表(招待・特別) 公開
Universal behavior of photoluminescence in polar and semipolar InGaN quantum wells revealed by hydrostatic pressure studies Universal behavior of photoluminescence in polar and semipolar InGaN quantum wells revealed by hydrostatic pressure studies Universal behavior of photoluminescence in polar and semipolar InGaN quantum wells revealed by hydrostatic pressure studies 9th Intern. Conf. on Nitride Semiconductors 9th Intern. Conf. on Nitride Semiconductors 9th Intern. Conf. on Nitride Semiconductors 2011/07/12 英語 口頭発表(招待・特別) 公開
Realization of highly-efficient deep-ultraviolet emitters based on AlGaN/AlN quantum well Realization of highly-efficient deep-ultraviolet emitters based on AlGaN/AlN quantum well Realization of highly-efficient deep-ultraviolet emitters based on AlGaN/AlN quantum well Intern. Conf. on Materials for Advanced Technologies Intern. Conf. on Materials for Advanced Technologies Intern. Conf. on Materials for Advanced Technologies 2011/06/30 英語 口頭発表(招待・特別) 公開
電子線励起法によるAlGaN/AlN量子井戸からの高出力・高効率深紫外発光 電子線励起法によるAlGaN/AlN量子井戸からの高出力・高効率深紫外発光 第58回応用物理学会関係連合講演会 第58回応用物理学会関係連合講演会 応用物理学会 応用物理学会 2011/03/26 日本語 口頭発表(招待・特別) 公開
Visualization of the local carrier dynamics in InGaN SQW using dual-probe scanning near-field optical microscopy Visualization of the local carrier dynamics in InGaN SQW using dual-probe scanning near-field optical microscopy Visualization of the local carrier dynamics in InGaN SQW using dual-probe scanning near-field optical microscopy 2011 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Device 2011 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Device 2011 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Device 2011/03/18 英語 口頭発表(招待・特別) 公開
窒化物半導体発光素子の高効率化が拓くグリーンイノベーション 窒化物半導体発光素子の高効率化が拓くグリーンイノベーション レーザー学会学術講演会第31回年次大会 レーザー学会学術講演会第31回年次大会 2011/01/10 日本語 口頭発表(招待・特別) 公開
Visualization of the local carrier dynamics in InGaN SQW using dual probe scanning near field optical microscope Visualization of the local carrier dynamics in InGaN SQW using dual probe scanning near field optical microscope Visualization of the local carrier dynamics in InGaN SQW using dual probe scanning near field optical microscope Intern. workshop on Nitride Semiconductors Intern. workshop on Nitride Semiconductors Intern. workshop on Nitride Semiconductors 2010/09/21 英語 口頭発表(招待・特別) 公開
ウルツ鉱構造におけるquasicubic近似の破綻 ウルツ鉱構造におけるquasicubic近似の破綻 ウルツ鉱構造におけるquasicubic近似の破綻 弟71回応用物理学会学術講演会 弟71回応用物理学会学術講演会 弟71回応用物理学会学術講演会 応用物理学会 応用物理学会 2010/09/15 英語 口頭発表(招待・特別) 公開
Impact of breakdown of the quasi-cubic approximation in GaN on the optical polarization properties of nonpolar and semipolar GaN/AlGaN quantum wells Impact of breakdown of the quasi-cubic approximation in GaN on the optical polarization properties of nonpolar and semipolar GaN/AlGaN quantum wells Impact of breakdown of the quasi-cubic approximation in GaN on the optical polarization properties of nonpolar and semipolar GaN/AlGaN quantum wells The 37th Intern. Symp. on Compound Semiconductors The 37th Intern. Symp. on Compound Semiconductors The 37th Intern. Symp. on Compound Semiconductors 2010/06/01 英語 口頭発表(招待・特別) 公開
Applications of plasmonics toward high-efficiency LEDs and solar cells Applications of plasmonics toward high-efficiency LEDs and solar cells Applications of plasmonics toward high-efficiency LEDs and solar cells The Intern. Symp. on Advanced Nanomaterials and Nanosystems 2010 The Intern. Symp. on Advanced Nanomaterials and Nanosystems 2010 The Intern. Symp. on Advanced Nanomaterials and Nanosystems 2010 2010/05/21 英語 口頭発表(招待・特別) 公開
Mapping of efficiency droop in InGaN quantum wells studied by scanning near-field optical microscopy Mapping of efficiency droop in InGaN quantum wells studied by scanning near-field optical microscopy Mapping of efficiency droop in InGaN quantum wells studied by scanning near-field optical microscopy The 8th Intern. Symp. on Semiconductor Light Emitting Devices The 8th Intern. Symp. on Semiconductor Light Emitting Devices The 8th Intern. Symp. on Semiconductor Light Emitting Devices 2010/05/17 英語 口頭発表(招待・特別) 公開
Approach to the Efficient Light Emitters in Deep-UV with Al-rich AlGaN/AlN Quantum Wells Approach to the Efficient Light Emitters in Deep-UV with Al-rich AlGaN/AlN Quantum Wells Approach to the Efficient Light Emitters in Deep-UV with Al-rich AlGaN/AlN Quantum Wells 3rd GCOE Intern. Symp. 3rd GCOE Intern. Symp. 3rd GCOE Intern. Symp. 2010/03/12 英語 口頭発表(招待・特別) 公開
Semipolar (11-22)-oriented InGaN/GaN LEDs and their optical properties Semipolar (11-22)-oriented InGaN/GaN LEDs and their optical properties Semipolar (11-22)-oriented InGaN/GaN LEDs and their optical properties The 2nd International Conference on White LEDs and Solid State Lighting The 2nd International Conference on White LEDs and Solid State Lighting The 2nd International Conference on White LEDs and Solid State Lighting 2009/12/16 英語 口頭発表(招待・特別) 公開
Semipolar (11-22)-oriented InGaN/GaN quantum wells Semipolar (11-22)-oriented InGaN/GaN quantum wells Semipolar (11-22)-oriented InGaN/GaN quantum wells Asia Communications and Photonics Conference and Exhibition Asia Communications and Photonics Conference and Exhibition Asia Communications and Photonics Conference and Exhibition 2009/11/03 英語 口頭発表(招待・特別) 公開
Semipolar III-nitride semiconductors for visible light emitters Semipolar III-nitride semiconductors for visible light emitters Semipolar III-nitride semiconductors for visible light emitters 27th Physics Congress, Samahang Pisika ng Pilipinas 27th Physics Congress, Samahang Pisika ng Pilipinas 27th Physics Congress, Samahang Pisika ng Pilipinas 2009/10/28 英語 口頭発表(招待・特別) 公開
Polarization anisotropy in semipolar/polar nitride semiconductor quantum wells Polarization anisotropy in semipolar/polar nitride semiconductor quantum wells Polarization anisotropy in semipolar/polar nitride semiconductor quantum wells 8th Intern. Conf. on Nitride Semiconductors 8th Intern. Conf. on Nitride Semiconductors 8th Intern. Conf. on Nitride Semiconductors 2009/10/23 英語 口頭発表(招待・特別) 公開
AlリッチAlGaN系量子井戸の光物性-InGaN系量子井戸と比較して- AlリッチAlGaN系量子井戸の光物性-InGaN系量子井戸と比較して- 弟70回応用物理学会学術講演会 弟70回応用物理学会学術講演会 応用物理学会 応用物理学会 2009/09/09 日本語 口頭発表(招待・特別) 公開
交互供給法によるAlNおよびAlGaN量子井戸の作製と評価 交互供給法によるAlNおよびAlGaN量子井戸の作製と評価 弟70回応用物理学会学術講演会 弟70回応用物理学会学術講演会 応用物理学会 応用物理学会 2009/09/09 日本語 口頭発表(招待・特別) 公開
Recombination dynamics in semi-polar -11 InGaN/GaN quantum wells Recombination dynamics in semi-polar -11 InGaN/GaN quantum wells Recombination dynamics in semi-polar -11 InGaN/GaN quantum wells 6th Intern. Workshop on Bulk Nitride Semiconductors 6th Intern. Workshop on Bulk Nitride Semiconductors 6th Intern. Workshop on Bulk Nitride Semiconductors 2009/08/25 英語 口頭発表(招待・特別) 公開
Characterization and control of recombination process in nitride semiconductors Characterization and control of recombination process in nitride semiconductors Characterization and control of recombination process in nitride semiconductors E-MRS Spring meeting 2009 E-MRS Spring meeting 2009 E-MRS Spring meeting 2009 2009/06/11 英語 口頭発表(招待・特別) 公開
Multi-color Light-emitters Diodes Based on GaN Microstructures Multi-color Light-emitters Diodes Based on GaN Microstructures Multi-color Light-emitters Diodes Based on GaN Microstructures 2nd GCOE Intern. Symp. 2nd GCOE Intern. Symp. 2nd GCOE Intern. Symp. 2009/03/13 英語 口頭発表(招待・特別) 公開
Multi-color light-emitting diodes based on GaN micro-structures Multi-color light-emitting diodes based on GaN micro-structures Multi-color light-emitting diodes based on GaN micro-structures SPIE Photonics West SPIE Photonics West SPIE Photonics West 2009/01/29 英語 口頭発表(招待・特別) 公開
Monolithic polychromatic InGaN light-emitting diodes based on micro-facet structures Monolithic polychromatic InGaN light-emitting diodes based on micro-facet structures Monolithic polychromatic InGaN light-emitting diodes based on micro-facet structures Intern. Meeting on Information Display, Intern. Display Manufacturing, Conf. and Asia Display 2008 Intern. Meeting on Information Display, Intern. Display Manufacturing, Conf. and Asia Display 2008 Intern. Meeting on Information Display, Intern. Display Manufacturing, Conf. and Asia Display 2008 2008/10/16 英語 口頭発表(招待・特別) 公開
Polarization anisotropy in semipolar InGaN/GaN quantum well active layers Polarization anisotropy in semipolar InGaN/GaN quantum well active layers Polarization anisotropy in semipolar InGaN/GaN quantum well active layers Intern. workshop on Nitride Semiconductors Intern. workshop on Nitride Semiconductors Intern. workshop on Nitride Semiconductors 2008/10/09 英語 口頭発表(招待・特別) 公開
Highly efficient light emission based on plasmonics Highly efficient light emission based on plasmonics Highly efficient light emission based on plasmonics 2008 Japan-US Nanophotonics Seminar 2008 Japan-US Nanophotonics Seminar 2008 Japan-US Nanophotonics Seminar 2008/09/25 英語 口頭発表(招待・特別) 公開
Surface plasmon enhanced highly efficient light-emitting devices Surface plasmon enhanced highly efficient light-emitting devices Surface plasmon enhanced highly efficient light-emitting devices 2nd Intern. Conf. on Functional materials and Devices 2nd Intern. Conf. on Functional materials and Devices 2nd Intern. Conf. on Functional materials and Devices 2008/06/18 英語 口頭発表(招待・特別) 公開
Characterization and Control of Recombination Dynamics in Low-dimensional InGaN-based Semiconductors Characterization and Control of Recombination Dynamics in Low-dimensional InGaN-based Semiconductors Characterization and Control of Recombination Dynamics in Low-dimensional InGaN-based Semiconductors The 3rd Intern. Conf. Smart Materials Structures Systems The 3rd Intern. Conf. Smart Materials Structures Systems The 3rd Intern. Conf. Smart Materials Structures Systems 2008/06/09 英語 口頭発表(招待・特別) 公開
非極性面InGaN量子井戸レーザの光学特性 非極性面InGaN量子井戸レーザの光学特性 弟55回応用物理学会関係連合講演会 弟55回応用物理学会関係連合講演会 応用物理学会 応用物理学会 2008/03/28 日本語 口頭発表(招待・特別) 公開
Surface Plasmon Interaction in Nitride Nanostructures Surface Plasmon Interaction in Nitride Nanostructures Surface Plasmon Interaction in Nitride Nanostructures JSPS-UNT Winterschool on Nanophotonics JSPS-UNT Winterschool on Nanophotonics JSPS-UNT Winterschool on Nanophotonics 2008/02/15 英語 口頭発表(招待・特別) 公開

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日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会編/赤崎勇,松波弘之 編著 日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会編/赤崎勇,松波弘之 編著 半極性・半極性面上新規高効率発光デバイスワイドギャップ半導体-あけぼのから最前線へー 半極性・半極性面上新規高効率発光デバイスワイドギャップ半導体-あけぼのから最前線へー 培風館 培風館 2013/01 日本語 分担執筆 公開
足立吟也 監修・編集 足立吟也 監修・編集 レアメタル便覧 レアメタル便覧 丸善 丸善 2011/01 日本語 分担執筆 公開
川上養一(分担執筆) 川上養一(分担執筆) フォトニックナノ構造の最近の進展, 第9章, pp.167-184 フォトニックナノ構造の最近の進展, 第9章, pp.167-184 シーエムシー出版 シーエムシー出版 2011 日本語 公開
川上 養一, 船戸 充 川上 養一, 船戸 充 窒化物基板および格子整合基板の成長とデバイス特性, 第2章, pp.104-118 窒化物基板および格子整合基板の成長とデバイス特性, 第2章, pp.104-118 シーエムシー出版 シーエムシー出版 2009 日本語 公開
川上 養一 川上 養一 発光と受光の物理と応用 発光と受光の物理と応用 培風館 培風館 2008/03 分担執筆 公開
Fuanto, M.; Kawakami, Y.; Narukawa, Y.; Mukai, T. (分担執筆) Fuanto, M.; Kawakami, Y.; Narukawa, Y.; Mukai, T. (分担執筆) Fuanto, M.; Kawakami, Y.; Narukawa, Y.; Mukai, T. (分担執筆) Nitrides with Nonpolar Surfaces:Growth, Properties, and Devices edited by Tanya Paskova, pp.385-411 Nitrides with Nonpolar Surfaces:Growth, Properties, and Devices edited by Tanya Paskova, pp.385-411 Nitrides with Nonpolar Surfaces:Growth, Properties, and Devices edited by Tanya Paskova, pp.385-411 Wiley-Vch Verlag GmbH & Co. KGaA Wiley-Vch Verlag GmbH & Co. KGaA Wiley-Vch Verlag GmbH & Co. KGaA 2008 英語 公開
Kawakami, Y.; Kaneta, A.; Funato, M. (分担執筆) Kawakami, Y.; Kaneta, A.; Funato, M. (分担執筆) Kawakami, Y.; Kaneta, A.; Funato, M. (分担執筆) Advances in Light Emitting Materials, Materials Science Forum, 590, pp.249-274 Advances in Light Emitting Materials, Materials Science Forum, 590, pp.249-274 Advances in Light Emitting Materials, Materials Science Forum, 590, pp.249-274 Trans Tech Publications Trans Tech Publications Trans Tech Publications 2008 英語 公開
川上 養一 川上 養一 川上 養一 Low-Dimensional Nitride Semiconductors[Partial Collaboration] Low-Dimensional Nitride Semiconductors[Partial Collaboration] Low-Dimensional Nitride Semiconductors[Partial Collaboration] Oxford University Press, Oxford University Press, Oxford University Press, 2002 英語 公開
川上 養一 川上 養一 川上 養一 Introduction to Nitride semiconductor Blue Lasers and Light Emitting Diodes (jointly worked) Introduction to Nitride semiconductor Blue Lasers and Light Emitting Diodes (jointly worked) Introduction to Nitride semiconductor Blue Lasers and Light Emitting Diodes (jointly worked) Taylor & Francis, Taylor & Francis, Taylor & Francis, 2000 英語 公開
川上 養一 川上 養一 川上 養一 Well width dependence of Stark effect in ZnSe-ZnCdSe multiple quantum well modulators Well width dependence of Stark effect in ZnSe-ZnCdSe multiple quantum well modulators Well width dependence of Stark effect in ZnSe-ZnCdSe multiple quantum well modulators Proc. 2nd Intern. Conf. on Thin Film Physics & Application,SPIE2364/,267-272 Proc. 2nd Intern. Conf. on Thin Film Physics & Application,SPIE2364/,267-272 Proc. 2nd Intern. Conf. on Thin Film Physics & Application,SPIE2364/,267-272 1994 英語 公開
川上 養一 川上 養一 川上 養一 Time-Resolved Spectroscopy of Excitonic Luminescence in Cubic ZnCdS Lattice Matched to GaAs Time-Resolved Spectroscopy of Excitonic Luminescence in Cubic ZnCdS Lattice Matched to GaAs Time-Resolved Spectroscopy of Excitonic Luminescence in Cubic ZnCdS Lattice Matched to GaAs Proc. 22nd Intern. Conf. on the Physics of Semiconductors,1/,305-308 Proc. 22nd Intern. Conf. on the Physics of Semiconductors,1/,305-308 Proc. 22nd Intern. Conf. on the Physics of Semiconductors,1/,305-308 1994 英語 公開
川上 養一 川上 養一 川上 養一 Sulfur-passivation pretreatment of GaAs surface for layer-by-layer growth and atomic layer epitaxy of ZnSe by MOMBE(jointly worked) Sulfur-passivation pretreatment of GaAs surface for layer-by-layer growth and atomic layer epitaxy of ZnSe by MOMBE(jointly worked) Sulfur-passivation pretreatment of GaAs surface for layer-by-layer growth and atomic layer epitaxy of ZnSe by MOMBE(jointly worked) Extended Abstracts of the 22th Intern. Conf. on Solid State Devices and Materials,897-900 Extended Abstracts of the 22th Intern. Conf. on Solid State Devices and Materials,897-900 Extended Abstracts of the 22th Intern. Conf. on Solid State Devices and Materials,897-900 1990 英語 公開
川上 養一 川上 養一 川上 養一 Heavy-hole and light-hole excitions in ZnSe-ZnS<sub>0.12</sub>Se<sub>0.85</sub> and ZnSe-ZnS strained-layer superlattices Heavy-hole and light-hole excitions in ZnSe-ZnS<sub>0.12</sub>Se<sub>0.85</sub> and ZnSe-ZnS strained-layer superlattices Heavy-hole and light-hole excitions in ZnSe-ZnS<sub>0.12</sub>Se<sub>0.85</sub> and ZnSe-ZnS strained-layer superlattices Proc. 19th Intern. Conf. on the Physics of Semiconductors,479-483 Proc. 19th Intern. Conf. on the Physics of Semiconductors,479-483 Proc. 19th Intern. Conf. on the Physics of Semiconductors,479-483 1988 英語 公開

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タイトル言語:
特許
発明者 発明者(日本語) 発明者(英語) 発明の名称 発明の名称(日本語) 発明の名称(英語) 審査の段階 番号 年月 公開
岡本晃一,船戸 充,川上養一,片岡 研,羽田博成,高椋健司 岡本晃一,船戸 充,川上養一,片岡 研,羽田博成,高椋健司 紫外線照射装置 紫外線照射装置 特許登録 特許5548204 2015/07/16 公開
西村活人, 川上養一, 船戸 充, 金田昭男, 橋本恒明 西村活人, 川上養一, 船戸 充, 金田昭男, 橋本恒明 走査型プローブ顕微鏡及びそのプローブ近接検出方法 走査型プローブ顕微鏡及びそのプローブ近接検出方法 特許登録 特許5733724 2015/06/10 公開
小島一信, 川上養一, 船戸 充, 長濱慎一, 枡井真吾 小島一信, 川上養一, 船戸 充, 長濱慎一, 枡井真吾 窒化物半導体レーザ素子 窒化物半導体レーザ素子 特許登録 特許5286723 2013/09/11 公開
齊藤 肇,種谷元隆,湯浅貴之,田部勢津久,川上養一 齊藤 肇,種谷元隆,湯浅貴之,田部勢津久,川上養一 発光装置 発光装置 特許登録 特許5178993 2013/04/10 公開
川上養一, 船戸 充, 大音隆男, R. G. Banal, 山口真典, 片岡 研, 羽田博成 川上養一, 船戸 充, 大音隆男, R. G. Banal, 山口真典, 片岡 研, 羽田博成 紫外線照射装置 紫外線照射装置 特許登録 特許5192097 2013/02/08 公開
石田真也, 森岡達也, 花岡大介, 種谷元隆, 藤田茂夫, 川上養一, 原田雅史, 佐々木考友, 森 勇介 石田真也, 森岡達也, 花岡大介, 種谷元隆, 藤田茂夫, 川上養一, 原田雅史, 佐々木考友, 森 勇介 発光装置及び蛍光体 発光装置及び蛍光体 特許登録 特許4805980 2011/08/19 公開
森岡達也, 齊藤 肇, 種谷元隆, 藤田茂夫, 藤田静雄, 川上養一, 船戸 充, 原田雅史 森岡達也, 齊藤 肇, 種谷元隆, 藤田茂夫, 藤田静雄, 川上養一, 船戸 充, 原田雅史 蛍光体粒子、蛍光体粒子分散体ならびにこれらを含む照明装置および表示装置 蛍光体粒子、蛍光体粒子分散体ならびにこれらを含む照明装置および表示装置 特許登録 特許4785363 2011/07/22 公開
川上養一,鈴木文雄,黒田剛正,鈴木亜香 川上養一,鈴木文雄,黒田剛正,鈴木亜香 光射出器及び光制御素子 光射出器及び光制御素子 特許登録 特許4623643 2011/02/02 公開
成川幸男, 仁木 勇, アクセル シェラー, 岡本晃一, 川上養一, 船戸 充, 藤田茂夫 成川幸男, 仁木 勇, アクセル シェラー, 岡本晃一, 川上養一, 船戸 充, 藤田茂夫 発光ダイオード素子およびその製造方法 発光ダイオード素子およびその製造方法 特許登録 特許4637534 2010/12/03 公開
成川幸男,仁木 勇,アクセル シェラー,岡本 晃一,川上養一,船戸 充,藤田茂夫 成川幸男,仁木 勇,アクセル シェラー,岡本 晃一,川上養一,船戸 充,藤田茂夫 窒化物半導体素子およびその製造方法 窒化物半導体素子およびその製造方法 特許登録 特許4572270 2010/11/04 公開
川上養一, 岡本晃一, 金田昭男, 藤田茂夫 川上養一, 岡本晃一, 金田昭男, 藤田茂夫 近接場光学顕微鏡装置 近接場光学顕微鏡装置 特許登録 特許4614296 2010/10/29 公開
齊藤 肇, 種谷 元隆, 湯浅 貴之, 田部 勢津久, 川上 養一 齊藤 肇, 種谷 元隆, 湯浅 貴之, 田部 勢津久, 川上 養一 赤色蛍光体およびこれを用いた発光装置 赤色蛍光体およびこれを用いた発光装置 特許登録 特許4592457 2010/09/24 公開
島田順一,川上 養一,山田元量,加藤 勝 島田順一,川上 養一,山田元量,加藤 勝 照明装置 照明装置 特許登録 特許4488183 2010/06/23 公開
齊藤 肇, 藤田茂夫, 藤田静雄, 川上養一, 船戸 充, 原田雅史 齊藤 肇, 藤田茂夫, 藤田静雄, 川上養一, 船戸 充, 原田雅史 発光体 発光体 特許登録 特許4526339 2010/06/11 公開
両輪達也, 齊藤 肇, 湯浅貴之, 種谷元隆, 藤田茂夫, 川上養一, 原田雅史 両輪達也, 齊藤 肇, 湯浅貴之, 種谷元隆, 藤田茂夫, 川上養一, 原田雅史 蛍光体およびその製造方法 蛍光体およびその製造方法 特許登録 特許4502758 2010/04/30 公開
島田順一, 川上養一, 山田元量 島田順一, 川上養一, 山田元量 照明装置、フィルタ装置、画像表示装置 照明装置、フィルタ装置、画像表示装置 特許登録 特許4452607 2010/02/05 公開
齊藤 肇, 藤田茂夫, 藤田静雄, 川上養一, 船戸 充, 原田雅史 齊藤 肇, 藤田茂夫, 藤田静雄, 川上養一, 船戸 充, 原田雅史 蛍光体およびその製造方法ならびに発光装置 蛍光体およびその製造方法ならびに発光装置 特許登録 特許4401264 2010/01/20 公開
森岡達也, 石田真也, 花岡大介, 種谷元隆, 藤田茂夫, 藤田静雄, 川上養一 森岡達也, 石田真也, 花岡大介, 種谷元隆, 藤田茂夫, 藤田静雄, 川上養一 照明装置 照明装置 特許登録 特許4197109 2008/10/10 公開
島田順一, 川上養一, 藤田茂夫 島田順一, 川上養一, 藤田茂夫 LED照明システム LED照明システム 特許登録 特許4124638 2008/05/16 公開
島田順一, 川上養一, 藤田茂夫, 長谷川 靖哉, 柳田祥三, 和田雄二 島田順一, 川上養一, 藤田茂夫, 長谷川 靖哉, 柳田祥三, 和田雄二 発光装置 発光装置 特許登録 特許3897110 2007/01/05 公開
長谷川靖哉, 柳田祥三, 和田雄二, 島田順一, 川上養一, 藤田茂夫 長谷川靖哉, 柳田祥三, 和田雄二, 島田順一, 川上養一, 藤田茂夫 希土類錯体並びにそれを用いた光機能材料及び発光装置 希土類錯体並びにそれを用いた光機能材料及び発光装置 特許登録 特許3668966 2005/04/22 公開
岡本晃一, 川上養一 岡本晃一, 川上養一 液晶を用いた電場センサ及びそれを用いた立体動画記録再生装置 液晶を用いた電場センサ及びそれを用いた立体動画記録再生装置 特許登録 特許3515994 2004/01/30 公開

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タイトル言語:
学術賞等
賞の名称(日本語) 賞の名称(英語) 授与組織名(日本語) 授与組織名(英語) 年月
JJAP論文賞 応用物理学会 The Japan Society of Applied Physics 2007/09/04
第5回(2011年度)応用物理学会Fellow表彰 応用物理学会 The Japan Society of Applied Physics 2011/08/30
Best Paper Award CLEO-PR&OECC/PS 2013 2013/07/04
応用物理学会論文賞 応用物理学会 The Japan Society of Applied Physics 2014/09/17
外部資金:競争的資金・科学研究費補助金
種別 代表/分担 テーマ(日本語) テーマ(英語) 期間
基盤研究(A) 代表 近接場光学法による窒化物半導体ナノ構造の発光機構解明 2003/04/01〜2006/03/11
基盤研究(A) 代表 ナノ空間発光ダイナミクス計測の基盤技術開発  2006/04/01〜2009/03/31
特定領域研究 代表 高In組成InGaNおよび高Al組成AlGaNの輻射・非輻射再結合過程の解明と制 2006/04/01〜2011/03/31
基盤研究(A) 分担 新規半極性結晶面上での窒化物半導体緑色レーザの開発 2007/04/01〜2010/03/31
基盤研究(S) 代表 近接場マルチプローブ分光の基盤技術開発 2009/04/01〜2014/03/31
基盤研究(S) 代表 窒化物ナノ局在系の物性制御によるテーラーメイド光源の実現 2015/04/01〜2020/03/31
外部資金:競争的資金・科学研究費補助金以外
制度名 代表者名 研究課題(日本語) 研究課題(英語) 期間
ワイドギャップ半導体の物性制御に関する研究 Research on the property control of wide band-gap semiconductors
青線〜紫外域発光素子に関する研究 Development of electroluminescence devices covering blue to ultraviolet spectral region
量子井戸の作製とその励起子物性に関する研究 Fabrication of quantum wells and their excitonic properties
受託研究 川上養一 ナノ結晶効果の解明と新規ナノ光物性の発現 2005/10/01〜2011/03/31
担当科目
講義名(日本語) 講義名(英語) 開講期 学部/研究科 年度
光物性工学 前期 工学研究科 2011/04〜2012/03
光工学1 後期 工学部 2011/04〜2012/03
電気応用工学 前期 工学部 2011/04〜2012/03
光工学2 前期 工学部 2011/04〜2012/03
光工学1 Fundamentals of Optical Engineering 1 後期 工学部 2012/04〜2013/03
光工学2 Fundamentals of Optical Engineering 2 前期 工学部 2012/04〜2013/03
光物性工学 Optical Properties and Engineering 前期 工学研究科 2012/04〜2013/03
光工学1 Fundamentals of Optical Engineering 1 後期 工学部 2013/04〜2014/03
光工学2 Fundamentals of Optical Engineering 2 前期 工学部 2013/04〜2014/03
電子工学特別実験及演習1 Advanced Experiments and Exercises in Electronic Science and Engineering I 通年 工学研究科 2013/04〜2014/03
電子工学特別実験及演習2 Advanced Experiments and Exercises in Electronic Science and Engineering II 通年 工学研究科 2013/04〜2014/03
研究論文 Master's Thesis 通年 工学研究科 2013/04〜2014/03
研究インターンシップM Research Internship(M) 通年 工学研究科 2013/04〜2014/03
光物性工学 Optical Properties and Engineering 前期 工学研究科 2013/04〜2014/03
電子工学特別研修1(インターン) Advanced Seminar in Electronic Science and Engineering I 前期 工学研究科 2013/04〜2014/03
電子工学特別研修2(インターン) Advanced Seminar in Electronic Science and Engineering II 前期 工学研究科 2013/04〜2014/03
電子工学特別セミナー Advanced Seminar on Electronic Science and Engineering 通年 工学研究科 2013/04〜2014/03
研究インターンシップD Research Internship (D) 通年 工学研究科 2013/04〜2014/03
電子工学特別演習1 Advanced Exercises on Electronic Science and Engineering I 通年 工学研究科 2013/04〜2014/03
電子工学特別演習2 Advanced Exercises on Electronic Science and Engineering II 通年 工学研究科 2013/04〜2014/03
光工学1 Fundamentals of Optical Engineering 1 後期 工学部 2014/04〜2015/03
光工学2 Fundamentals of Optical Engineering 2 前期 工学部 2014/04〜2015/03
光物性工学 Optical Properties and Engineering 前期 工学研究科 2014/04〜2015/03
光工学1 Fundamentals of Optical Engineering 1 後期 工学部 2015/04〜2016/03
光工学2 Fundamentals of Optical Engineering 2 前期 工学部 2015/04〜2016/03
光物性工学 Optical Properties and Engineering 前期 工学研究科 2015/04〜2016/03

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全学運営(役職等)
役職名 期間
京都大学国際交流センター外国人留学生日本語・日本文化研修委員会 委員 2009/09/20〜2011/03/31
外国人留学生日本語・日本文化研修委員会 委員 2011/04/01〜2012/03/31
京都大学研究公正の推進検討委員会 研究公正教育小委員会 委員 2014/10/01〜2015/02/28
京都大学研究公正推進委員会 委員 2015/03/01〜2017/03/31
部局運営(役職等)
役職名 期間
電子工学専攻長 2013/04/01〜2014/03/31
副研究科長 2015/04/01〜2016/03/31
工学研究科運営会議 2014/04/01〜2015/03/31
工学研究科点検・評価委員会 委員 2014/04/01〜2015/03/31
工学研究科研究推進委員会 委員 2014/04/01〜2015/03/31
工学研究科運営会議 2015/04/01〜2016/03/31
工学研究科運営会議 企画・運営・評価部門 企画担当 2015/04/01〜2016/03/31
工学研究科運営会議 企画・運営・評価部門 財務担当 2015/04/01〜2016/03/31
工学研究科運営会議 企画・運営・評価部門 施設整備担当 2015/04/01〜2016/03/31
工学研究科運営会議 企画・運営・評価部門 事務改革担当 2015/04/01〜2016/03/31
工学研究科運営会議 法務部門 2015/04/01〜2016/03/31
工学研究科点検・評価委員会 委員 2015/04/01〜2016/03/31
工学研究科研究推進委員会 委員 2015/04/01〜2016/03/31

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学会活動:その他
学会名(日本語) 学会名(英語) 貢献活動名(日本語) 貢献活動名(英語) 期間
日本学術振興会 ワイドギャップ半導体光・電子デバイス第162委員会 運営委員および企画委員主査
日本学術振興会 光電変換 第125委員会 委員
電子情報通信学会 レーザ・量子エレクトロニクス研究専門委員会 委員 2006/05/27〜
電子情報通信学会 集積光デバイスと応用技術次元研究 専門委員会 委員
その他活動:国・地方公共団体での活動
委員会名(日本語) 委員会名(英語) 役職名 公共団体の名称 期間
戦略的創造研究推進事業 追跡評価委員 独立行政法人科学技術振興機構 2012/07/27〜2012/10/31
科学研究費委員会 専門委員 独立行政法人 日本学術振興会 2013/12/01〜2014/11/30
科学研究費委員会 専門委員(基盤研究等第1段審査委員) 独立行政法人 日本学術振興会 2014/12/01〜2015/11/30