後藤 康仁

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氏名(漢字/フリガナ/アルファベット表記)
後藤 康仁/ゴトウ ヤスヒト/Gotoh, Yasuhito
所属部署・職名(部局/所属/講座等/職名)
工学研究科/電子工学専攻集積機能工学講座/准教授
学部兼担
部局 所属 講座等 職名
工学部
連絡先住所
種別 住所(日本語) 住所(英語)
職場 〒615-8510 京都市西京区京都大学桂1番地 Kyotodaigaku-Katsura, Nishikyo-ku, Kyoto 615-8510 Japan
所属学会(国内)
学会名(日本語) 学会名(英語)
応用物理学会 Japan Society of Applied Physics
電子情報通信学会 Institute of Electronics, Information and Communication Engineers
日本表面真空学会 The Japan Society of Vacuum and Surface Science
原子衝突学会 The Atomic Collision Society of Japan
取得学位
学位名(日本語) 学位名(英語) 大学(日本語) 大学(英語) 取得区分
工学修士 京都大学
博士(工学) 京都大学
出身大学院・研究科等
大学名(日本語) 大学名(英語) 研究科名(日本語) 研究科名(英語) 専攻名(日本語) 専攻名(英語) 修了区分
京都大学 大学院工学研究科修士課程電子工学専攻 修了
出身学校・専攻等
大学名(日本語) 大学名(英語) 学部名(日本語) 学部名(英語) 学科名(日本語) 学科名(英語) 卒業区分
京都大学 工学部電子工学科 卒業
職歴
期間 組織名(日本語) 組織名(英語) 職名(日本語) 職名(英語)
1987/04/〜1990/05/ 株式会社豊田中央研究所 Toyota Central Research and Development Laborabories, Inc. 技師補 Assistant Engineer
1990/06/〜1995/03/ 京都大学工学部 Kyoto University, Faculty of Engineering 助手 Instructor
1995/04/〜2003/02/ 京都大学大学院工学研究科 Kyoto University, Graduate School of Engineering 助手 Instructor
2003/03/〜 京都大学大学院工学研究科 Kyoto University, Graduate School of Engineering 准教授(助教授) Associate Professor
プロフィール
(日本語)
真空中における荷電粒子の発生・輸送とその応用に関する研究に従事している。大学院生と共同で実験を主体に理論も交えて研究を進め、院生には総合的な研究推進能力を身につけさせるようにしている。研究テーマは基礎中心であるが、関連分野の企業との共同研究により新製品の実用化に向けた研究にも取り組んでいる。学会等主催の国際会議への協力、学会の行う講習会等の企画運営等の社会活動にも携わり、真空関連技術の普及に努めている。
(英語)
I am engaged in generation, transport, and application of charged particle beams in vacuum. In promoting researches, I always think of balance between experimatal and theoretical works so that the graduate students who take part in the research gain versatile research abilities. The research topics include fundamental studies, together with development of new commercial products in cooperation with some private companies. I also cooperate with academic societies to organize international conferences and tutorial lectures, in order to distibute the knowledge of vacuum engineering.
使用言語
言語名(japanese) 言語名(english) コード
英語
researchmap URL
https://researchmap.jp/read0012724
研究テーマ
(日本語)
電界放出による電子・イオン生成、高速粒子を伴う薄膜形成・微細加工技術、原子尺度の分解能を持つ顕微質量分析
(英語)
Electron and ion formation by field emission, Thin film formation and microfabrication with energetic particles, Microscopic mass spectroscopy with atomic spatial resolution
研究概要
(日本語)
強電界や高速のイオン衝撃などが存在するような材料にとっての極限状態ともいえる条件下における物理と、それらを応用した荷電粒子生成・輸送技術、薄膜・微細加工技術、微細領域の分析技術の開発を研究のテーマとしている。これまで培った電界放射顕微鏡の技術の展開として、ナノ構造における個々の原子・分子の構造分析・質量分析を同時に行う顕微質量分析技術の開発に着手している。
(英語)
My major interest is the physics under high electric field and/or bombardment of energetic particles. The research topics also include the application of the physics to such technologies that generation and transportation of charged particles, thin-film and micro-fabrication, and micro-analysis. Recently, studies on microscopic mass spectroscopy with atomic spatial resolution, of which basis is the principle of field emission microscope, have been started.
研究分野(キーワード)
キーワード(日本語) キーワード(英語)
電界放出 Field emission
高速粒子プロセス Processes with energetic particles
顕微質量分析 Microscopic mass spectroscopy with atomic spatial resolution
論文
著者 著者(日本語) 著者(英語) タイトル タイトル(日本語) タイトル(英語) 書誌情報等 書誌情報等(日本語) 書誌情報等(英語) 出版年月 査読の有無 記述言語 掲載種別 公開
S. Hogyoku, S. Fujiwara, H. Tsuji, Y. Gotoh S. Hogyoku, S. Fujiwara, H. Tsuji, Y. Gotoh S. Hogyoku, S. Fujiwara, H. Tsuji, Y. Gotoh Field ion microscope observation of tungsten surface processed in ethanol Field ion microscope observation of tungsten surface processed in ethanol Field ion microscope observation of tungsten surface processed in ethanol Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 2014 英語 公開
Y. Gotoh, Y. Yasutomo, H. Tsuji Y. Gotoh, Y. Yasutomo, H. Tsuji Y. Gotoh, Y. Yasutomo, H. Tsuji Vacuum frequency mixer with a field emitter array Vacuum frequency mixer with a field emitter array Vacuum frequency mixer with a field emitter array Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 31, 5 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 31, 5 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 31, 5 2013 英語 公開
Y. Gotoh, W. Ohue, H. Tsuji Y. Gotoh, W. Ohue, H. Tsuji Y. Gotoh, W. Ohue, H. Tsuji Energy dependence of non-Rutherford proton elastic scattering spectrum for hafnium nitride thin film Energy dependence of non-Rutherford proton elastic scattering spectrum for hafnium nitride thin film Energy dependence of non-Rutherford proton elastic scattering spectrum for hafnium nitride thin film Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 2013 英語 公開
後藤康仁, 安友佳樹, 辻博司 後藤康仁, 安友佳樹, 辻博司 フィールドエミッタアレイを用いた電子デバイスにおける空間電荷効果 フィールドエミッタアレイを用いた電子デバイスにおける空間電荷効果 電子情報通信学会技術研究報告, 112, 303(ED2012 54-64), 45-48 電子情報通信学会技術研究報告, 112, 303(ED2012 54-64), 45-48 , 112, 303(ED2012 54-64), 45-48 2012/11/12 日本語 公開
O. Nakagawara, N. Kikuchi, Y. Gotoh, Y. Ishihara, S. Iwamori, N. Makino, T. Nakano, T. Sakai O. Nakagawara, N. Kikuchi, Y. Gotoh, Y. Ishihara, S. Iwamori, N. Makino, T. Nakano, T. Sakai O. Nakagawara, N. Kikuchi, Y. Gotoh, Y. Ishihara, S. Iwamori, N. Makino, T. Nakano, T. Sakai Preface Preface Preface Vacuum Vacuum Vacuum 2012 英語 公開
N. Arai, M. Harada, H. Kotaki, A. Takahashi, G. Miyagawa, S. Kinoshita, H. Tsuji, Y. Gotoh N. Arai, M. Harada, H. Kotaki, A. Takahashi, G. Miyagawa, S. Kinoshita, H. Tsuji, Y. Gotoh N. Arai, M. Harada, H. Kotaki, A. Takahashi, G. Miyagawa, S. Kinoshita, H. Tsuji, Y. Gotoh Luminescence properties of Ge-implanted SiO <sub>2</sub> layer on Si substrate for blue-UV light source with low-voltage drive Luminescence properties of Ge-implanted SiO <sub>2</sub> layer on Si substrate for blue-UV light source with low-voltage drive Luminescence properties of Ge-implanted SiO <sub>2</sub> layer on Si substrate for blue-UV light source with low-voltage drive IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai, 40-41 IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai, 40-41 IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai, 40-41 2012 英語 公開
Y. Yasutomo, W. Ohue, Y. Gotoh, H. Tsuji Y. Yasutomo, W. Ohue, Y. Gotoh, H. Tsuji Y. Yasutomo, W. Ohue, Y. Gotoh, H. Tsuji Frequency mixing with a tetrode vacuum transistor Frequency mixing with a tetrode vacuum transistor Frequency mixing with a tetrode vacuum transistor IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai, 42-43 IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai, 42-43 IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai, 42-43 2012 英語 公開
H. Tsuji, P. Sommani, Y. Hayashi, H. Kojima, H. Sato, Y. Gotoh, G. Takaoka, J. Ishikawa H. Tsuji, P. Sommani, Y. Hayashi, H. Kojima, H. Sato, Y. Gotoh, G. Takaoka, J. Ishikawa H. Tsuji, P. Sommani, Y. Hayashi, H. Kojima, H. Sato, Y. Gotoh, G. Takaoka, J. Ishikawa Surface modification of silica glass by CHF3 plasma treatment and carbon negative-ion implantation for cell pattern adhesion Surface modification of silica glass by CHF3 plasma treatment and carbon negative-ion implantation for cell pattern adhesion Surface modification of silica glass by CHF3 plasma treatment and carbon negative-ion implantation for cell pattern adhesion Surface and Coatings Technology, 206, 5, 900-904 Surface and Coatings Technology, 206, 5, 900-904 Surface and Coatings Technology, 206, 5, 900-904 2011/11/25 英語 公開
P. Sommani, H. Tsuji, H. Kojima, H. Sato, Y. Gotoh, J. Ishikawa, G. Takaoka P. Sommani, H. Tsuji, H. Kojima, H. Sato, Y. Gotoh, J. Ishikawa, G. Takaoka P. Sommani, H. Tsuji, H. Kojima, H. Sato, Y. Gotoh, J. Ishikawa, G. Takaoka Line-width of ion beam-modified polystyrene by negative carbon ions for fine adhesion pattern of mesenchymal stem cells Line-width of ion beam-modified polystyrene by negative carbon ions for fine adhesion pattern of mesenchymal stem cells Line-width of ion beam-modified polystyrene by negative carbon ions for fine adhesion pattern of mesenchymal stem cells Surface and Coatings Technology, 206, 5, 897-899 Surface and Coatings Technology, 206, 5, 897-899 Surface and Coatings Technology, 206, 5, 897-899 2011/11/25 英語 公開
H. Tsuji, N. Arai, M. Hattori, M. Ohsaki, Y. Gotoh, J. Ishikawa H. Tsuji, N. Arai, M. Hattori, M. Ohsaki, Y. Gotoh, J. Ishikawa H. Tsuji, N. Arai, M. Hattori, M. Ohsaki, Y. Gotoh, J. Ishikawa Germanium negative-ion implantation into SiO2 layer on Si. Photoluminescence properties and oxidation state of Ge atoms in subsequent heat treatment Germanium negative-ion implantation into SiO2 layer on Si. Photoluminescence properties and oxidation state of Ge atoms in subsequent heat treatment Germanium negative-ion implantation into SiO2 layer on Si. Photoluminescence properties and oxidation state of Ge atoms in subsequent heat treatment Surface and Coatings Technology, 206, 5, 785-788 Surface and Coatings Technology, 206, 5, 785-788 Surface and Coatings Technology, 206, 5, 785-788 2011/11/25 英語 公開
後藤 康仁, 池田 啓太, 大上 航, 安友 佳樹, 辻 博司 後藤 康仁, 池田 啓太, 大上 航, 安友 佳樹, 辻 博司 真空トランジスタによる振幅変調波の検波(電子管と真空ナノエレクトロニクス及びその評価技術) 真空トランジスタによる振幅変調波の検波(電子管と真空ナノエレクトロニクス及びその評価技術) 電子情報通信学会技術研究報告. ED, 電子デバイス, 111, 248, 1-4 電子情報通信学会技術研究報告. ED, 電子デバイス, 111, 248, 1-4 , 111, 248, 1-4 2011/10/13 日本語 公開
安友 佳樹, 大上 航, 後藤 康仁, 辻 博司 安友 佳樹, 大上 航, 後藤 康仁, 辻 博司 四極構造の真空トランジスタを用いた周波数混合実験(電子管と真空ナノエレクトロニクス及びその評価技術) 四極構造の真空トランジスタを用いた周波数混合実験(電子管と真空ナノエレクトロニクス及びその評価技術) 電子情報通信学会技術研究報告. ED, 電子デバイス, 111, 248, 5-8 電子情報通信学会技術研究報告. ED, 電子デバイス, 111, 248, 5-8 , 111, 248, 5-8 2011/10/13 日本語 公開
安友佳樹, 大上航, 後藤康仁, 辻博司 安友佳樹, 大上航, 後藤康仁, 辻博司 四極構造の真空トランジスタを用いた周波数混合実験 四極構造の真空トランジスタを用いた周波数混合実験 電子情報通信学会技術研究報告, 111, 248(ED2011 59-72), 5-8 電子情報通信学会技術研究報告, 111, 248(ED2011 59-72), 5-8 , 111, 248(ED2011 59-72), 5-8 2011/10/13 日本語 公開
D. Nicolaescu, S. Sakai, Y. Gotoh, J. Ishikawa D. Nicolaescu, S. Sakai, Y. Gotoh, J. Ishikawa D. Nicolaescu, S. Sakai, Y. Gotoh, J. Ishikawa Ion beam neutralization using three-dimensional electron confinement by surface modification of magnetic poles Ion beam neutralization using three-dimensional electron confinement by surface modification of magnetic poles Ion beam neutralization using three-dimensional electron confinement by surface modification of magnetic poles Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 645, 1, 153-158 Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 645, 1, 153-158 Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 645, 1, 153-158 2011/07/21 英語 公開
木下 翔平, 辻 博司, 洗 暢俊, 後藤 康仁 木下 翔平, 辻 博司, 洗 暢俊, 後藤 康仁 熱酸化シリコン薄膜へのゲルマニウム負イオン斜め注入とフォトルミネッセンス評価 熱酸化シリコン薄膜へのゲルマニウム負イオン斜め注入とフォトルミネッセンス評価 真空, 54, 3, 213-216 真空, 54, 3, 213-216 , 54, 3, 213-216 2011/03/20 日本語 公開
D. Nicolaescu, S. Sakai, Y. Gotoh, J. Ishikawa D. Nicolaescu, S. Sakai, Y. Gotoh, J. Ishikawa D. Nicolaescu, S. Sakai, Y. Gotoh, J. Ishikawa Compensation of space charge for positive ion beams using electron injection and confinement in nonuniform magnetic fields Compensation of space charge for positive ion beams using electron injection and confinement in nonuniform magnetic fields Compensation of space charge for positive ion beams using electron injection and confinement in nonuniform magnetic fields Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 29, 2 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 29, 2 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 29, 2 2011/03 英語 公開
K. Ikeda, W. Ohue, K. Endo, Y. Gotoh, H. Tsuji K. Ikeda, W. Ohue, K. Endo, Y. Gotoh, H. Tsuji K. Ikeda, W. Ohue, K. Endo, Y. Gotoh, H. Tsuji Development of a vacuum transistor using hafnium nitride field emitter arrays Development of a vacuum transistor using hafnium nitride field emitter arrays Development of a vacuum transistor using hafnium nitride field emitter arrays Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 29, 2 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 29, 2 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 29, 2 2011/03 英語 公開
池田 啓太, 大上 航, 後藤 康仁, 辻 博司 池田 啓太, 大上 航, 後藤 康仁, 辻 博司 窒化ハフニウムフィールドエミッタアレイを用いた真空トランジスタの周波数特性(電子管と真空ナノエレクトロニクス及びその評価技術) 窒化ハフニウムフィールドエミッタアレイを用いた真空トランジスタの周波数特性(電子管と真空ナノエレクトロニクス及びその評価技術) 電子情報通信学会技術研究報告. ED, 電子デバイス, 110, 249, 47-50 電子情報通信学会技術研究報告. ED, 電子デバイス, 110, 249, 47-50 , 110, 249, 47-50 2010/10/18 日本語 公開
後藤康仁, 池田啓太, 大上航, 辻博司 後藤康仁, 池田啓太, 大上航, 辻博司 真空トランジスタのコレクタ形状とコレクタ特性 真空トランジスタのコレクタ形状とコレクタ特性 電子情報通信学会技術研究報告, 110, 249(ED2010 128-141), 51-54 電子情報通信学会技術研究報告, 110, 249(ED2010 128-141), 51-54 , 110, 249(ED2010 128-141), 51-54 2010/10/18 日本語 公開
後藤康仁, 遠藤恵介, 辻博司, 石川順三, 酒井滋樹 後藤康仁, 遠藤恵介, 辻博司, 石川順三, 酒井滋樹 三フッ化メタンプラズマ処理したシリコン電界放出電子源の表面状態と電子放出特性 三フッ化メタンプラズマ処理したシリコン電界放出電子源の表面状態と電子放出特性 電子情報通信学会技術研究報告, 110, 249(ED2010 128-141), 7-10 電子情報通信学会技術研究報告, 110, 249(ED2010 128-141), 7-10 , 110, 249(ED2010 128-141), 7-10 2010/10/18 日本語 公開
P. Sommani, H. Tsuji, H. Kojima, H. Sato, Y. Gotoh, J. Ishikawa, G.H. Takaoka P. Sommani, H. Tsuji, H. Kojima, H. Sato, Y. Gotoh, J. Ishikawa, G.H. Takaoka P. Sommani, H. Tsuji, H. Kojima, H. Sato, Y. Gotoh, J. Ishikawa, G.H. Takaoka Irradiation effect of carbon negative-ion implantation on polytetrafluoroethylene for controlling cell-adhesion property Irradiation effect of carbon negative-ion implantation on polytetrafluoroethylene for controlling cell-adhesion property Irradiation effect of carbon negative-ion implantation on polytetrafluoroethylene for controlling cell-adhesion property Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 268, 19, 3231-3234 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 268, 19, 3231-3234 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 268, 19, 3231-3234 2010/10/01 英語 公開
M. Takeuchi, Y. Gotoh, H. Tsuji, J. Ishikawa, S. Sakai M. Takeuchi, Y. Gotoh, H. Tsuji, J. Ishikawa, S. Sakai M. Takeuchi, Y. Gotoh, H. Tsuji, J. Ishikawa, S. Sakai Metal-free and gasless space charge compensation of low energy ion beam by using surface-carbonized silicon field emitter array Metal-free and gasless space charge compensation of low energy ion beam by using surface-carbonized silicon field emitter array Metal-free and gasless space charge compensation of low energy ion beam by using surface-carbonized silicon field emitter array Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 28, 2, C2D5-C2D10 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 28, 2, C2D5-C2D10 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 28, 2, C2D5-C2D10 2010/03 英語 公開
M. Kawasaki, Z. He, Y. Gotoh, H. Tsuji, J. Ishikawa M. Kawasaki, Z. He, Y. Gotoh, H. Tsuji, J. Ishikawa M. Kawasaki, Z. He, Y. Gotoh, H. Tsuji, J. Ishikawa Development of in situ analyzer of field-emission devices Development of in situ analyzer of field-emission devices Development of in situ analyzer of field-emission devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 28, 2, C2A77-C2A82 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 28, 2, C2A77-C2A82 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 28, 2, C2A77-C2A82 2010/03 英語 公開
M. Liao, Y. Gotoh, H. Tsuji, K. Nakajima, M. Imura, Y. Koide M. Liao, Y. Gotoh, H. Tsuji, K. Nakajima, M. Imura, Y. Koide M. Liao, Y. Gotoh, H. Tsuji, K. Nakajima, M. Imura, Y. Koide Piezoelectric Pb(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub> thin films on single crystal diamond: Structural, electrical, dielectric, and field-effect-transistor properties Piezoelectric Pb(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub> thin films on single crystal diamond: Structural, electrical, dielectric, and field-effect-transistor properties Piezoelectric Pb(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub> thin films on single crystal diamond: Structural, electrical, dielectric, and field-effect-transistor properties Journal of Applied Physics, 107, 2 Journal of Applied Physics, 107, 2 Journal of Applied Physics, 107, 2 2010/01/15 英語 公開
N. Kikuchi, Y. Gotoh, N. Fujiwara, O. Nakagawara, T. Nakano N. Kikuchi, Y. Gotoh, N. Fujiwara, O. Nakagawara, T. Nakano N. Kikuchi, Y. Gotoh, N. Fujiwara, O. Nakagawara, T. Nakano Vacuum: Preface Vacuum: Preface Vacuum: Preface Vacuum, 84, 12, 1353- Vacuum, 84, 12, 1353- Vacuum, 84, 12, 1353- 2010 英語 公開
P. Sommani, H. Tsuji, H. Sato, Y. Gotoh, J. Ishikawa, G.H. Takaoka P. Sommani, H. Tsuji, H. Sato, Y. Gotoh, J. Ishikawa, G.H. Takaoka P. Sommani, H. Tsuji, H. Sato, Y. Gotoh, J. Ishikawa, G.H. Takaoka Fine adhesion patterning and aligned nuclei orientation of mesenchymal stem cell on narrow line-width of silicone rubber implanted by carbon negative ions Fine adhesion patterning and aligned nuclei orientation of mesenchymal stem cell on narrow line-width of silicone rubber implanted by carbon negative ions Fine adhesion patterning and aligned nuclei orientation of mesenchymal stem cell on narrow line-width of silicone rubber implanted by carbon negative ions Journal of the Vacuum Society of Japan, 53, 3, 191-193 Journal of the Vacuum Society of Japan, 53, 3, 191-193 Journal of the Vacuum Society of Japan, 53, 3, 191-193 2010 英語 公開
N. Arai, H. Tsuji, M. Hattori, M. Ohsaki, H. Kotaki, T. Ishibashi, Y. Gotoh, J. Ishikawa N. Arai, H. Tsuji, M. Hattori, M. Ohsaki, H. Kotaki, T. Ishibashi, Y. Gotoh, J. Ishikawa N. Arai, H. Tsuji, M. Hattori, M. Ohsaki, H. Kotaki, T. Ishibashi, Y. Gotoh, J. Ishikawa Luminescence properties of Ge implanted SiO<sub>2</sub>:Ge and GeO<sub>2</sub>:Ge films Luminescence properties of Ge implanted SiO<sub>2</sub>:Ge and GeO<sub>2</sub>:Ge films Luminescence properties of Ge implanted SiO<sub>2</sub>:Ge and GeO<sub>2</sub>:Ge films Applied Surface Science, 256, 4, 954-957 Applied Surface Science, 256, 4, 954-957 Applied Surface Science, 256, 4, 954-957 2009 英語 公開
J. Ishikawa, H. Tsuji, Y. Gotoh J. Ishikawa, H. Tsuji, Y. Gotoh J. Ishikawa, H. Tsuji, Y. Gotoh Surface modification by negative-ion implantation Surface modification by negative-ion implantation Surface modification by negative-ion implantation Surface and Coatings Technology, 203, 17-18, 2351-2356 Surface and Coatings Technology, 203, 17-18, 2351-2356 Surface and Coatings Technology, 203, 17-18, 2351-2356 2009 英語 公開
H. Tsuji, P. Sommani, M. Hattori, T. Yamada, H. Sato, Y. Gotoh, J. Ishikawa H. Tsuji, P. Sommani, M. Hattori, T. Yamada, H. Sato, Y. Gotoh, J. Ishikawa H. Tsuji, P. Sommani, M. Hattori, T. Yamada, H. Sato, Y. Gotoh, J. Ishikawa Negative ion implantation for pattering mesenchymal-stem cell adhesion on silicone rubber and differentiation into nerve cells with keeping their adhesion pattern Negative ion implantation for pattering mesenchymal-stem cell adhesion on silicone rubber and differentiation into nerve cells with keeping their adhesion pattern Negative ion implantation for pattering mesenchymal-stem cell adhesion on silicone rubber and differentiation into nerve cells with keeping their adhesion pattern Surface and Coatings Technology, 203, 17-18, 2562-2565 Surface and Coatings Technology, 203, 17-18, 2562-2565 Surface and Coatings Technology, 203, 17-18, 2562-2565 2009 英語 公開
T. Kanzawa, N. Setojima, Y. Miyata, Y. Gotoh, H. Tsuji, J. Ishikawa T. Kanzawa, N. Setojima, Y. Miyata, Y. Gotoh, H. Tsuji, J. Ishikawa T. Kanzawa, N. Setojima, Y. Miyata, Y. Gotoh, H. Tsuji, J. Ishikawa Evaluation of hafnium nitride thin films sputtered from a hafnium nitride target Evaluation of hafnium nitride thin films sputtered from a hafnium nitride target Evaluation of hafnium nitride thin films sputtered from a hafnium nitride target Vacuum, 83, 3, 589-591 Vacuum, 83, 3, 589-591 Vacuum, 83, 3, 589-591 2008/10/15 英語 公開
H. Tsuji, P. Sommani, M. Hattori, T. Yamada, H. Sato, Y. Gotoh, J. Ishikawa H. Tsuji, P. Sommani, M. Hattori, T. Yamada, H. Sato, Y. Gotoh, J. Ishikawa H. Tsuji, P. Sommani, M. Hattori, T. Yamada, H. Sato, Y. Gotoh, J. Ishikawa Adhesion patterning of mesenchymal stem cells on polystyrene surface by carbon negative-ion implantation and neuron differentiation on the position Adhesion patterning of mesenchymal stem cells on polystyrene surface by carbon negative-ion implantation and neuron differentiation on the position Adhesion patterning of mesenchymal stem cells on polystyrene surface by carbon negative-ion implantation and neuron differentiation on the position Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 266, 12-13, 3067-3070 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 266, 12-13, 3067-3070 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 266, 12-13, 3067-3070 2008/06 英語 公開
A. Oowada, M. Takeuchi, Y. Sakai, Y. Gotoh, M. Nagao, H. Tsuji, J. Ishikawa, S. Sakai, T. Kimoto A. Oowada, M. Takeuchi, Y. Sakai, Y. Gotoh, M. Nagao, H. Tsuji, J. Ishikawa, S. Sakai, T. Kimoto A. Oowada, M. Takeuchi, Y. Sakai, Y. Gotoh, M. Nagao, H. Tsuji, J. Ishikawa, S. Sakai, T. Kimoto Extension of lifetime of silicon field emitter arrays in oxygen ambient by carbon negative ion implantation Extension of lifetime of silicon field emitter arrays in oxygen ambient by carbon negative ion implantation Extension of lifetime of silicon field emitter arrays in oxygen ambient by carbon negative ion implantation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26, 2, 876-879 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26, 2, 876-879 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26, 2, 876-879 2008/03 英語 公開
D. Nicolaescu, V. Filip, Y. Gotoh, J. Ishikawa D. Nicolaescu, V. Filip, Y. Gotoh, J. Ishikawa D. Nicolaescu, V. Filip, Y. Gotoh, J. Ishikawa Modeling of linear carbon nanotube nanotriodes with improved field uniformity Modeling of linear carbon nanotube nanotriodes with improved field uniformity Modeling of linear carbon nanotube nanotriodes with improved field uniformity Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26, 2, 806-812 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26, 2, 806-812 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26, 2, 806-812 2008/03 英語 公開
M. Takeuchi, T. Kojima, A. Oowada, Y. Gotoh, M. Nagao, H. Tsuji, J. Ishikawa, S. Sakai, T. Kimoto M. Takeuchi, T. Kojima, A. Oowada, Y. Gotoh, M. Nagao, H. Tsuji, J. Ishikawa, S. Sakai, T. Kimoto M. Takeuchi, T. Kojima, A. Oowada, Y. Gotoh, M. Nagao, H. Tsuji, J. Ishikawa, S. Sakai, T. Kimoto Electron-emission properties of silicon field-emitter arrays in gaseous ambient for charge-compensation device Electron-emission properties of silicon field-emitter arrays in gaseous ambient for charge-compensation device Electron-emission properties of silicon field-emitter arrays in gaseous ambient for charge-compensation device Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26, 2, 782-787 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26, 2, 782-787 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26, 2, 782-787 2008/03 英語 公開
N. Arai, H. Tsuji, H. Nakatsuka, K. Kojima, K. Adachi, H. Kotaki, T. Ishibashi, Y. Gotoh, J. Ishikawa N. Arai, H. Tsuji, H. Nakatsuka, K. Kojima, K. Adachi, H. Kotaki, T. Ishibashi, Y. Gotoh, J. Ishikawa N. Arai, H. Tsuji, H. Nakatsuka, K. Kojima, K. Adachi, H. Kotaki, T. Ishibashi, Y. Gotoh, J. Ishikawa Germanium nanoparticles formation in silicon dioxide layer by multi-energy implantation of Ge negative ions and their photo-luminescence Germanium nanoparticles formation in silicon dioxide layer by multi-energy implantation of Ge negative ions and their photo-luminescence Germanium nanoparticles formation in silicon dioxide layer by multi-energy implantation of Ge negative ions and their photo-luminescence Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 147, 2-3, 230-234 Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 147, 2-3, 230-234 Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 147, 2-3, 230-234 2008/02/15 英語 公開
M. Takeuchi, Y. Gotoh, H. Tsuji, J. Ishikawa, S. Sakai M. Takeuchi, Y. Gotoh, H. Tsuji, J. Ishikawa, S. Sakai M. Takeuchi, Y. Gotoh, H. Tsuji, J. Ishikawa, S. Sakai Development of low energy ion beam system for space charge compensation experiments Development of low energy ion beam system for space charge compensation experiments Development of low energy ion beam system for space charge compensation experiments Review of Scientific Instruments, 79, 2 Review of Scientific Instruments, 79, 2 Review of Scientific Instruments, 79, 2 2008/02 英語 公開
N. Arai, H. Tsuji, K. Adachi, H. Kotaki, Y. Gotoh, J. Ishikawa N. Arai, H. Tsuji, K. Adachi, H. Kotaki, Y. Gotoh, J. Ishikawa N. Arai, H. Tsuji, K. Adachi, H. Kotaki, Y. Gotoh, J. Ishikawa Silver negative-ion implantation into thermally grown thin SiO<sub>2</sub> film on Si substrate and heat treatment for formation of silver nanoparticles Silver negative-ion implantation into thermally grown thin SiO<sub>2</sub> film on Si substrate and heat treatment for formation of silver nanoparticles Silver negative-ion implantation into thermally grown thin SiO<sub>2</sub> film on Si substrate and heat treatment for formation of silver nanoparticles Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 46, 9B, 6260-6266 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 46, 9B, 6260-6266 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 46, 9B, 6260-6266 2007/09 英語 公開
H. Tsuji, N. Arai, N. Gotoh, T. Minotani, T. Ishibashi, T. Okumine, K. Adachi, H. Kotaki, Y. Gotoh, J. Ishikawa H. Tsuji, N. Arai, N. Gotoh, T. Minotani, T. Ishibashi, T. Okumine, K. Adachi, H. Kotaki, Y. Gotoh, J. Ishikawa H. Tsuji, N. Arai, N. Gotoh, T. Minotani, T. Ishibashi, T. Okumine, K. Adachi, H. Kotaki, Y. Gotoh, J. Ishikawa Germanium nanoparticle formation in thin oxide films on Si by negative-ion implantation Germanium nanoparticle formation in thin oxide films on Si by negative-ion implantation Germanium nanoparticle formation in thin oxide films on Si by negative-ion implantation Surface and Coatings Technology, 201, 19-20, 8516-8520 Surface and Coatings Technology, 201, 19-20, 8516-8520 Surface and Coatings Technology, 201, 19-20, 8516-8520 2007/08/05 英語 公開
N. Arai, H. Tsuji, N. Gotoh, T. Minotani, T. Ishibashi, T. Okumine, K. Adachi, H. Kotaki, Y. Gotoh, J. Ishikawa N. Arai, H. Tsuji, N. Gotoh, T. Minotani, T. Ishibashi, T. Okumine, K. Adachi, H. Kotaki, Y. Gotoh, J. Ishikawa N. Arai, H. Tsuji, N. Gotoh, T. Minotani, T. Ishibashi, T. Okumine, K. Adachi, H. Kotaki, Y. Gotoh, J. Ishikawa Thermal diffusion behavior of implanted germanium atoms in silicon dioxide film measured by high-resolution RBS Thermal diffusion behavior of implanted germanium atoms in silicon dioxide film measured by high-resolution RBS Thermal diffusion behavior of implanted germanium atoms in silicon dioxide film measured by high-resolution RBS Surface and Coatings Technology, 201, 19-20, 8312-8316 Surface and Coatings Technology, 201, 19-20, 8312-8316 Surface and Coatings Technology, 201, 19-20, 8312-8316 2007/08/05 英語 公開
H. Tsuji, P. Sommani, T. Kitamura, M. Hattori, H. Sato, Y. Gotoh, J. Ishikawa H. Tsuji, P. Sommani, T. Kitamura, M. Hattori, H. Sato, Y. Gotoh, J. Ishikawa H. Tsuji, P. Sommani, T. Kitamura, M. Hattori, H. Sato, Y. Gotoh, J. Ishikawa Nerve-cell attachment properties of polystyrene and silicone rubber modified by carbon negative-ion implantation Nerve-cell attachment properties of polystyrene and silicone rubber modified by carbon negative-ion implantation Nerve-cell attachment properties of polystyrene and silicone rubber modified by carbon negative-ion implantation Surface and Coatings Technology, 201, 19-20, 8123-8126 Surface and Coatings Technology, 201, 19-20, 8123-8126 Surface and Coatings Technology, 201, 19-20, 8123-8126 2007/08/05 英語 公開
J. Ishikawa, H. Tsuji, H. Sato, Y. Gotoh J. Ishikawa, H. Tsuji, H. Sato, Y. Gotoh J. Ishikawa, H. Tsuji, H. Sato, Y. Gotoh Ion implantation of negative ions for cell growth manipulation and nervous system repair Ion implantation of negative ions for cell growth manipulation and nervous system repair Ion implantation of negative ions for cell growth manipulation and nervous system repair Surface and Coatings Technology, 201, 19-20, 8083-8090 Surface and Coatings Technology, 201, 19-20, 8083-8090 Surface and Coatings Technology, 201, 19-20, 8083-8090 2007/08/05 英語 公開
Y. Gotoh, Y. Kawamura, T. Niiya, T. Ishibashi, D. Nicolaescu, H. Tsuji, J. Ishikawa, A. Hosono, S. Nakata, S. Okuda Y. Gotoh, Y. Kawamura, T. Niiya, T. Ishibashi, D. Nicolaescu, H. Tsuji, J. Ishikawa, A. Hosono, S. Nakata, S. Okuda Y. Gotoh, Y. Kawamura, T. Niiya, T. Ishibashi, D. Nicolaescu, H. Tsuji, J. Ishikawa, A. Hosono, S. Nakata, S. Okuda Derivation of length of carbon nanotube responsible for electron emission from field emission characteristics Derivation of length of carbon nanotube responsible for electron emission from field emission characteristics Derivation of length of carbon nanotube responsible for electron emission from field emission characteristics Applied Physics Letters, 90, 20 Applied Physics Letters, 90, 20 Applied Physics Letters, 90, 20 2007/05/14 英語 公開
P. Sommani, H. Tsuji, H. Sato, T. Kitamura, M. Hattori, Y. Gotoh, J. Ishikawa P. Sommani, H. Tsuji, H. Sato, T. Kitamura, M. Hattori, Y. Gotoh, J. Ishikawa P. Sommani, H. Tsuji, H. Sato, T. Kitamura, M. Hattori, Y. Gotoh, J. Ishikawa Minimum line width of ion beam-modified polystyrene by negative carbon ions for nerve-cell attachment and neurite extension Minimum line width of ion beam-modified polystyrene by negative carbon ions for nerve-cell attachment and neurite extension Minimum line width of ion beam-modified polystyrene by negative carbon ions for nerve-cell attachment and neurite extension Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 257, 118-121 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 257, 118-121 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 257, 118-121 2007/04 英語 公開
H. Tsuji, N. Arai, N. Gotoh, T. Minotani, K. Kojima, K. Adachi, H. Kotaki, T. Ishibashi, Y. Gotoh, J. Ishikawa H. Tsuji, N. Arai, N. Gotoh, T. Minotani, K. Kojima, K. Adachi, H. Kotaki, T. Ishibashi, Y. Gotoh, J. Ishikawa H. Tsuji, N. Arai, N. Gotoh, T. Minotani, K. Kojima, K. Adachi, H. Kotaki, T. Ishibashi, Y. Gotoh, J. Ishikawa Nanoparticle formation in 25-nm-SiO<sub>2</sub> thin layer by germanium negative-ion implantation and its capacitance-voltage characteristics Nanoparticle formation in 25-nm-SiO<sub>2</sub> thin layer by germanium negative-ion implantation and its capacitance-voltage characteristics Nanoparticle formation in 25-nm-SiO<sub>2</sub> thin layer by germanium negative-ion implantation and its capacitance-voltage characteristics Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 257, 94-98 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 257, 94-98 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 257, 94-98 2007/04 英語 公開
Y. Gotoh, K. Mukai, Y. Kawamura, H. Tsuji, J. Ishikawa Y. Gotoh, K. Mukai, Y. Kawamura, H. Tsuji, J. Ishikawa Y. Gotoh, K. Mukai, Y. Kawamura, H. Tsuji, J. Ishikawa Work function of low index crystal facet of tungsten evaluated by the Seppen-Katamuki analysis Work function of low index crystal facet of tungsten evaluated by the Seppen-Katamuki analysis Work function of low index crystal facet of tungsten evaluated by the Seppen-Katamuki analysis Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 25, 2, 508-512 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 25, 2, 508-512 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 25, 2, 508-512 2007/03 英語 公開
D. Nicolaescu, V. Filip, G.H. Takaoka, Y. Gotoh, J. Ishikawa D. Nicolaescu, V. Filip, G.H. Takaoka, Y. Gotoh, J. Ishikawa D. Nicolaescu, V. Filip, G.H. Takaoka, Y. Gotoh, J. Ishikawa Analytical modeling for the electron emission properties of carbon nanotube arrays Analytical modeling for the electron emission properties of carbon nanotube arrays Analytical modeling for the electron emission properties of carbon nanotube arrays Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 25, 2, 472-477 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 25, 2, 472-477 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 25, 2, 472-477 2007/03 英語 公開
P. Sommani, H. Tsuji, T. Kitamura, M. Hattori, T. Yamada, H. Sato, Y. Gotoh, J. Ishikawa P. Sommani, H. Tsuji, T. Kitamura, M. Hattori, T. Yamada, H. Sato, Y. Gotoh, J. Ishikawa P. Sommani, H. Tsuji, T. Kitamura, M. Hattori, T. Yamada, H. Sato, Y. Gotoh, J. Ishikawa Effect of C-implantation on nerve-cell attachment to polystyrene films Effect of C-implantation on nerve-cell attachment to polystyrene films Effect of C-implantation on nerve-cell attachment to polystyrene films Shinku/Journal of the Vacuum Society of Japan, 50, 12, 755-758 Shinku/Journal of the Vacuum Society of Japan, 50, 12, 755-758 Shinku/Journal of the Vacuum Society of Japan, 50, 12, 755-758 2007 英語 公開
T. Yamada, H. Tsuji, M. Hattori, P. Sommani, H. Sato, Y. Gotoh, J. Ishikawa T. Yamada, H. Tsuji, M. Hattori, P. Sommani, H. Sato, Y. Gotoh, J. Ishikawa Estimation of protein absorption on polymer material by carbon-negative ion implantation Estimation of protein absorption on polymer material by carbon-negative ion implantation Shinku/Journal of the Vacuum Society of Japan, 50, 9, 579-582 Shinku/Journal of the Vacuum Society of Japan, 50, 9, 579-582 , 50, 9, 579-582 2007 日本語 公開
A. Oowada, T. Kojima, M. Takeuchi, Y. Gotoh, M. Nagao, H. Tsuji, J. Ishikawa, S. Sakai, T. Kimoto A. Oowada, T. Kojima, M. Takeuchi, Y. Gotoh, M. Nagao, H. Tsuji, J. Ishikawa, S. Sakai, T. Kimoto Long time operation of Si:C field emitter arrays in H<sub>2</sub> gas atmosphere Long time operation of Si:C field emitter arrays in H<sub>2</sub> gas atmosphere Shinku/Journal of the Vacuum Society of Japan, 50, 3, 178-180 Shinku/Journal of the Vacuum Society of Japan, 50, 3, 178-180 , 50, 3, 178-180 2007 日本語 公開
R. Fujii, Y. Gotoh, M.Y. Liao, H. Tsuji, J. Ishikawa R. Fujii, Y. Gotoh, M.Y. Liao, H. Tsuji, J. Ishikawa R. Fujii, Y. Gotoh, M.Y. Liao, H. Tsuji, J. Ishikawa Work function measurement of transition metal nitride and carbide thin films Work function measurement of transition metal nitride and carbide thin films Work function measurement of transition metal nitride and carbide thin films Vacuum, 80, 7, 832-835 Vacuum, 80, 7, 832-835 Vacuum, 80, 7, 832-835 2006/05/31 英語 公開
S. Kawaguchi, M. Tanemura, M. Kudo, N. Handa, N. Kinoshita, L. Miao, S. Tanemura, Y. Gotoh, M. Liao, S. Shinkai S. Kawaguchi, M. Tanemura, M. Kudo, N. Handa, N. Kinoshita, L. Miao, S. Tanemura, Y. Gotoh, M. Liao, S. Shinkai S. Kawaguchi, M. Tanemura, M. Kudo, N. Handa, N. Kinoshita, L. Miao, S. Tanemura, Y. Gotoh, M. Liao, S. Shinkai Development of a compact angle-resolved secondary ion mass spectrometer for Ar<sup>+</sup> sputtering Development of a compact angle-resolved secondary ion mass spectrometer for Ar<sup>+</sup> sputtering Development of a compact angle-resolved secondary ion mass spectrometer for Ar<sup>+</sup> sputtering Vacuum, 80, 7, 768-770 Vacuum, 80, 7, 768-770 Vacuum, 80, 7, 768-770 2006/05/31 英語 公開
H. Tsuji, N. Arai, N. Gotoh, T. Minotani, T. Ishibashi, T. Okumine, K. Adachi, H. Kotaki, Y. Gotoh, J. Ishikawa H. Tsuji, N. Arai, N. Gotoh, T. Minotani, T. Ishibashi, T. Okumine, K. Adachi, H. Kotaki, Y. Gotoh, J. Ishikawa H. Tsuji, N. Arai, N. Gotoh, T. Minotani, T. Ishibashi, T. Okumine, K. Adachi, H. Kotaki, Y. Gotoh, J. Ishikawa Negative-ion implantation into thin SiO<sub>2</sub> layer for defined nanoparticle formation Negative-ion implantation into thin SiO<sub>2</sub> layer for defined nanoparticle formation Negative-ion implantation into thin SiO<sub>2</sub> layer for defined nanoparticle formation Review of Scientific Instruments, 77, 3 Review of Scientific Instruments, 77, 3 Review of Scientific Instruments, 77, 3 2006/03 英語 公開
N. Arai, H. Tsuji, K. Ueno, T. Matsumoto, N. Gotoh, K. Aadachi, H. Kotaki, Y. Gotoh, J. Ishikawa N. Arai, H. Tsuji, K. Ueno, T. Matsumoto, N. Gotoh, K. Aadachi, H. Kotaki, Y. Gotoh, J. Ishikawa N. Arai, H. Tsuji, K. Ueno, T. Matsumoto, N. Gotoh, K. Aadachi, H. Kotaki, Y. Gotoh, J. Ishikawa Formation of silver nanoparticles aligned near the bottom of SiO <sub>2</sub> film on silicon substrate by negative-ion implantation and post-annealing Formation of silver nanoparticles aligned near the bottom of SiO <sub>2</sub> film on silicon substrate by negative-ion implantation and post-annealing Formation of silver nanoparticles aligned near the bottom of SiO <sub>2</sub> film on silicon substrate by negative-ion implantation and post-annealing Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 242, 1-2, 217-220 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 242, 1-2, 217-220 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 242, 1-2, 217-220 2006/01 英語 公開
H. Tsuji, N. Sakai, Y. Gotoh, J. Ishikawa H. Tsuji, N. Sakai, Y. Gotoh, J. Ishikawa H. Tsuji, N. Sakai, Y. Gotoh, J. Ishikawa Photocatalytic properties of sol-gel titania film under fluorescent-light irradiation improved by silver negative-ion implantation Photocatalytic properties of sol-gel titania film under fluorescent-light irradiation improved by silver negative-ion implantation Photocatalytic properties of sol-gel titania film under fluorescent-light irradiation improved by silver negative-ion implantation Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 242, 1-2, 129-132 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 242, 1-2, 129-132 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 242, 1-2, 129-132 2006/01 英語 公開
H. Tsuji, N. Arai, K. Ueno, T. Matsumoto, N. Gotoh, K. Adachi, H. Kotaki, Y. Gotoh, J. Ishikawa H. Tsuji, N. Arai, K. Ueno, T. Matsumoto, N. Gotoh, K. Adachi, H. Kotaki, Y. Gotoh, J. Ishikawa H. Tsuji, N. Arai, K. Ueno, T. Matsumoto, N. Gotoh, K. Adachi, H. Kotaki, Y. Gotoh, J. Ishikawa Formation of mono-layered gold nanoparticles in shallow depth of SiO <sub>2</sub> thin film by low-energy negative-ion implantation Formation of mono-layered gold nanoparticles in shallow depth of SiO <sub>2</sub> thin film by low-energy negative-ion implantation Formation of mono-layered gold nanoparticles in shallow depth of SiO <sub>2</sub> thin film by low-energy negative-ion implantation Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 242, 1-2, 125-128 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 242, 1-2, 125-128 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 242, 1-2, 125-128 2006/01 英語 公開
S. Kawaguchi, M. Kudo, M. Tanemura, L. Miao, S. Tanemura, Y. Gotoh, M. Liao, S. Shinkai S. Kawaguchi, M. Kudo, M. Tanemura, L. Miao, S. Tanemura, Y. Gotoh, M. Liao, S. Shinkai S. Kawaguchi, M. Kudo, M. Tanemura, L. Miao, S. Tanemura, Y. Gotoh, M. Liao, S. Shinkai Angle dependent sputtering and dimer formation from vanadium nitride target by Ar<sup>+</sup> ion bombardment Angle dependent sputtering and dimer formation from vanadium nitride target by Ar<sup>+</sup> ion bombardment Angle dependent sputtering and dimer formation from vanadium nitride target by Ar<sup>+</sup> ion bombardment Advanced Materials Research, 11-12, 607-610 Advanced Materials Research, 11-12, 607-610 Advanced Materials Research, 11-12, 607-610 2006 英語 公開
H. Tsuji, N. Arai, H. Nakatsuka, N. Gotoh, T. Minotani, K. Kojima, K. Kimura, K. Nakajima, T. Okumine, K. Adachi, H. Kotaki, Y. Gotoh, J. Ishikawa H. Tsuji, N. Arai, H. Nakatsuka, N. Gotoh, T. Minotani, K. Kojima, K. Kimura, K. Nakajima, T. Okumine, K. Adachi, H. Kotaki, Y. Gotoh, J. Ishikawa Diffusion measurement of silver atoms implanted into thermally grown oxide thin film on silicon substrate by high-resolution RBS and mono-layered silver nanoparticle formation by using diffusion barrier Diffusion measurement of silver atoms implanted into thermally grown oxide thin film on silicon substrate by high-resolution RBS and mono-layered silver nanoparticle formation by using diffusion barrier Shinku/Journal of the Vacuum Society of Japan, 49, 6, 386-389 Shinku/Journal of the Vacuum Society of Japan, 49, 6, 386-389 , 49, 6, 386-389 2006 日本語 公開
N. Arai, H. Tsuji, N. Gotoh, T. Minotani, H. Nakatsuka, K. Kojima, T. Yanagitani, T. Okumine, H. Ohnishi, T. Satoh, M. Harada, K. Adachi, H. Kotaki, Y. Gotoh, J. Ishikawa N. Arai, H. Tsuji, N. Gotoh, T. Minotani, H. Nakatsuka, K. Kojima, T. Yanagitani, T. Okumine, H. Ohnishi, T. Satoh, M. Harada, K. Adachi, H. Kotaki, Y. Gotoh, J. Ishikawa Electric characteristics of thin SiO <sub>2</sub> film embedded with Ge nanoparticles formed by negative ion implantation Electric characteristics of thin SiO <sub>2</sub> film embedded with Ge nanoparticles formed by negative ion implantation Shinku/Journal of the Vacuum Society of Japan, 49, 3, 180-182 Shinku/Journal of the Vacuum Society of Japan, 49, 3, 180-182 , 49, 3, 180-182 2006 日本語 公開
M.Y. Liao, Y. Gotoh, H. Tsuji, J. Ishikawa M.Y. Liao, Y. Gotoh, H. Tsuji, J. Ishikawa M.Y. Liao, Y. Gotoh, H. Tsuji, J. Ishikawa Deposition of vanadium carbide thin films using compound target sputtering and their field emission Deposition of vanadium carbide thin films using compound target sputtering and their field emission Deposition of vanadium carbide thin films using compound target sputtering and their field emission Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 23, 5, 1379-1383 Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 23, 5, 1379-1383 Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 23, 5, 1379-1383 2005/09 英語 公開
H. Tsuji, P. Sommani, T. Muto, Y. Utagawa, S. Sakai, H. Sato, Y. Gotoh, J. Ishikawa H. Tsuji, P. Sommani, T. Muto, Y. Utagawa, S. Sakai, H. Sato, Y. Gotoh, J. Ishikawa H. Tsuji, P. Sommani, T. Muto, Y. Utagawa, S. Sakai, H. Sato, Y. Gotoh, J. Ishikawa Immobilization of extracellular matrix on polymeric materials by carbon-negative-ion implantation Immobilization of extracellular matrix on polymeric materials by carbon-negative-ion implantation Immobilization of extracellular matrix on polymeric materials by carbon-negative-ion implantation Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 237, 1-2, 459-464 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 237, 1-2, 459-464 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 237, 1-2, 459-464 2005/08 英語 公開
H. Tsuji, N. Sakai, H. Sugahara, Y. Gotoh, J. Ishikawa H. Tsuji, N. Sakai, H. Sugahara, Y. Gotoh, J. Ishikawa H. Tsuji, N. Sakai, H. Sugahara, Y. Gotoh, J. Ishikawa Silver negative-ion implantation to sol-gel TiO<sub>2</sub> film for improving photocatalytic property under fluorescent light Silver negative-ion implantation to sol-gel TiO<sub>2</sub> film for improving photocatalytic property under fluorescent light Silver negative-ion implantation to sol-gel TiO<sub>2</sub> film for improving photocatalytic property under fluorescent light Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 237, 1-2, 433-437 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 237, 1-2, 433-437 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 237, 1-2, 433-437 2005/08 英語 公開
J. Ishikawa, H. Tsuji, N. Arai, T. Matsumoto, K. Ueno, K. Adachi, H. Kotaki, Y. Gotoh J. Ishikawa, H. Tsuji, N. Arai, T. Matsumoto, K. Ueno, K. Adachi, H. Kotaki, Y. Gotoh J. Ishikawa, H. Tsuji, N. Arai, T. Matsumoto, K. Ueno, K. Adachi, H. Kotaki, Y. Gotoh Formation of almost delta-layered nanoparticles in SiO<sub>2</sub> thin film on Si substrate by metal negative-ion implantation Formation of almost delta-layered nanoparticles in SiO<sub>2</sub> thin film on Si substrate by metal negative-ion implantation Formation of almost delta-layered nanoparticles in SiO<sub>2</sub> thin film on Si substrate by metal negative-ion implantation Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 237, 1-2, 422-427 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 237, 1-2, 422-427 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 237, 1-2, 422-427 2005/08 英語 公開
J. Ishikawa, Y. Gotoh, K. Nakamura, T. Kojima, H. Tsuji, T. Ikejiri, S. Sakai, S. Umisedo, N. Nagai, M. Nagao, S. Kanemaru J. Ishikawa, Y. Gotoh, K. Nakamura, T. Kojima, H. Tsuji, T. Ikejiri, S. Sakai, S. Umisedo, N. Nagai, M. Nagao, S. Kanemaru J. Ishikawa, Y. Gotoh, K. Nakamura, T. Kojima, H. Tsuji, T. Ikejiri, S. Sakai, S. Umisedo, N. Nagai, M. Nagao, S. Kanemaru Silicon field emission array as novel charge neutralization device for high current ion implanter Silicon field emission array as novel charge neutralization device for high current ion implanter Silicon field emission array as novel charge neutralization device for high current ion implanter Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 237, 1-2, 390-394 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 237, 1-2, 390-394 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 237, 1-2, 390-394 2005/08 英語 公開
N. Arai, H. Tsuji, K. Ueno, T. Matsumoto, Y. Gotoh, K. Adachi, H. Kotaki, J. Ishikawa N. Arai, H. Tsuji, K. Ueno, T. Matsumoto, Y. Gotoh, K. Adachi, H. Kotaki, J. Ishikawa N. Arai, H. Tsuji, K. Ueno, T. Matsumoto, Y. Gotoh, K. Adachi, H. Kotaki, J. Ishikawa Evaluation of nanoparticles embedded in thin silicon dioxide film by optical reflection property Evaluation of nanoparticles embedded in thin silicon dioxide film by optical reflection property Evaluation of nanoparticles embedded in thin silicon dioxide film by optical reflection property Surface and Coatings Technology, 196, 1-3, 44-49 Surface and Coatings Technology, 196, 1-3, 44-49 Surface and Coatings Technology, 196, 1-3, 44-49 2005/06/22 英語 公開
H. Tsuji, N. Arai, T. Matsumoto, K. Ueno, K. Adachi, H. Kotaki, Y. Gotoh, J. Ishikawa H. Tsuji, N. Arai, T. Matsumoto, K. Ueno, K. Adachi, H. Kotaki, Y. Gotoh, J. Ishikawa H. Tsuji, N. Arai, T. Matsumoto, K. Ueno, K. Adachi, H. Kotaki, Y. Gotoh, J. Ishikawa Delta layer formation of silver nanoparticles in thin silicon dioxide film by negative ion implantation Delta layer formation of silver nanoparticles in thin silicon dioxide film by negative ion implantation Delta layer formation of silver nanoparticles in thin silicon dioxide film by negative ion implantation Surface and Coatings Technology, 196, 1-3, 39-43 Surface and Coatings Technology, 196, 1-3, 39-43 Surface and Coatings Technology, 196, 1-3, 39-43 2005/06/22 英語 公開
T. Kojima, K. Nakamura, Y. Gotoh, H. Tsuji, J. Ishikawa, T. Ikejiri, S. Umisedo, S. Sakai, N. Nagai T. Kojima, K. Nakamura, Y. Gotoh, H. Tsuji, J. Ishikawa, T. Ikejiri, S. Umisedo, S. Sakai, N. Nagai Energy distribution of electrons emitted from silicon field emitter arrays Energy distribution of electrons emitted from silicon field emitter arrays Shinku/Journal of the Vacuum Society of Japan, 48, 5, 329-332 Shinku/Journal of the Vacuum Society of Japan, 48, 5, 329-332 , 48, 5, 329-332 2005 日本語 公開
Y. Kawamura, K. Ishizu, Y. Gotoh, H. Tsuji, J. Ishikawa, S. Nakata, S. Okuda Y. Kawamura, K. Ishizu, Y. Gotoh, H. Tsuji, J. Ishikawa, S. Nakata, S. Okuda Seppen-katamuki analysis of field emission from carbon nanotubes after KrF-excimer laser irradiation Seppen-katamuki analysis of field emission from carbon nanotubes after KrF-excimer laser irradiation Shinku/Journal of the Vacuum Society of Japan, 48, 5, 325-328 Shinku/Journal of the Vacuum Society of Japan, 48, 5, 325-328 , 48, 5, 325-328 2005 日本語 公開
H. Tsuji, N. Arai, T. Matsumoto, K. Ueno, Y. Gotoh, K. Adachi, H. Kotaki, J. Ishikawa H. Tsuji, N. Arai, T. Matsumoto, K. Ueno, Y. Gotoh, K. Adachi, H. Kotaki, J. Ishikawa H. Tsuji, N. Arai, T. Matsumoto, K. Ueno, Y. Gotoh, K. Adachi, H. Kotaki, J. Ishikawa Silver nanoparticle formation in thin oxide layer on silicon by silver-negative-ion implantation for Coulomb blockade at room temperature Silver nanoparticle formation in thin oxide layer on silicon by silver-negative-ion implantation for Coulomb blockade at room temperature Silver nanoparticle formation in thin oxide layer on silicon by silver-negative-ion implantation for Coulomb blockade at room temperature Applied Surface Science, 238, 1-4, 132-137 Applied Surface Science, 238, 1-4, 132-137 Applied Surface Science, 238, 1-4, 132-137 2004/11/15 英語 公開
M.Y. Liao, Y. Gotoh, H. Tsuji, J. Ishikawa M.Y. Liao, Y. Gotoh, H. Tsuji, J. Ishikawa M.Y. Liao, Y. Gotoh, H. Tsuji, J. Ishikawa Compound-target sputtering for niobium carbide thin-film deposition Compound-target sputtering for niobium carbide thin-film deposition Compound-target sputtering for niobium carbide thin-film deposition Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 22, 5, L24-L27 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 22, 5, L24-L27 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 22, 5, L24-L27 2004/09 英語 公開
H. Tsuji, M. Izukawa, R. Ikeguchi, R. Kakinoki, H. Sato, Y. Gotoh, J. Ishikawa H. Tsuji, M. Izukawa, R. Ikeguchi, R. Kakinoki, H. Sato, Y. Gotoh, J. Ishikawa H. Tsuji, M. Izukawa, R. Ikeguchi, R. Kakinoki, H. Sato, Y. Gotoh, J. Ishikawa Surface treatment of silicone rubber by carbon negative-ion implantation for nerve regeneration Surface treatment of silicone rubber by carbon negative-ion implantation for nerve regeneration Surface treatment of silicone rubber by carbon negative-ion implantation for nerve regeneration Applied Surface Science, 235, 1-2, 182-187 Applied Surface Science, 235, 1-2, 182-187 Applied Surface Science, 235, 1-2, 182-187 2004/07/31 英語 公開
K. Miya, M. Sasaki, S. Yamamoto, Y. Gotoh, Y. Kawamura, J. Ishikawa K. Miya, M. Sasaki, S. Yamamoto, Y. Gotoh, Y. Kawamura, J. Ishikawa K. Miya, M. Sasaki, S. Yamamoto, Y. Gotoh, Y. Kawamura, J. Ishikawa A study of TaN film field electron emitter material by a Kelvin probe force microscope A study of TaN film field electron emitter material by a Kelvin probe force microscope A study of TaN film field electron emitter material by a Kelvin probe force microscope Microelectronic Engineering, 71, 3-4, 343-347 Microelectronic Engineering, 71, 3-4, 343-347 Microelectronic Engineering, 71, 3-4, 343-347 2004/05 英語 公開
Y. Gotoh, M. Nagao, D. Nozaki, K. Utsumi, K. Inoue, T. Nakatani, T. Sakashita, K. Betsui, H. Tsuji, J. Ishikawa Y. Gotoh, M. Nagao, D. Nozaki, K. Utsumi, K. Inoue, T. Nakatani, T. Sakashita, K. Betsui, H. Tsuji, J. Ishikawa Y. Gotoh, M. Nagao, D. Nozaki, K. Utsumi, K. Inoue, T. Nakatani, T. Sakashita, K. Betsui, H. Tsuji, J. Ishikawa Electron emission properties of Spindt-type platinum field emission cathodes Electron emission properties of Spindt-type platinum field emission cathodes Electron emission properties of Spindt-type platinum field emission cathodes Journal of Applied Physics, 95, 3, 1537-1549 Journal of Applied Physics, 95, 3, 1537-1549 Journal of Applied Physics, 95, 3, 1537-1549 2004/02/01 英語 公開
M.Y. Liao, Y. Gotoh, H. Tsuji, J. Ishikawa M.Y. Liao, Y. Gotoh, H. Tsuji, J. Ishikawa M.Y. Liao, Y. Gotoh, H. Tsuji, J. Ishikawa Growth and stress evolution of hafnium nitride films sputtered from a compound target Growth and stress evolution of hafnium nitride films sputtered from a compound target Growth and stress evolution of hafnium nitride films sputtered from a compound target Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 22, 1, 214-220 Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 22, 1, 214-220 Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 22, 1, 214-220 2004/01 英語 公開
M.Y. Liao, Y. Gotoh, H. Tsuji, J. Ishikawa M.Y. Liao, Y. Gotoh, H. Tsuji, J. Ishikawa M.Y. Liao, Y. Gotoh, H. Tsuji, J. Ishikawa Crystallographic structure and composition of vanadium nitride films deposited by direct sputtering of a compound target Crystallographic structure and composition of vanadium nitride films deposited by direct sputtering of a compound target Crystallographic structure and composition of vanadium nitride films deposited by direct sputtering of a compound target Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 22, 1, 146-150 Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 22, 1, 146-150 Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 22, 1, 146-150 2004/01 英語 公開
C. Ichihara, A. Kobayashi, Y. Gotoh, K.-I. Inoue, H. Tsuji, J. Ishikawa C. Ichihara, A. Kobayashi, Y. Gotoh, K.-I. Inoue, H. Tsuji, J. Ishikawa Discharge characteristics of micro gas jet ion source Discharge characteristics of micro gas jet ion source Shinku/Journal of the Vacuum Society of Japan, 47, 3, 285-288 Shinku/Journal of the Vacuum Society of Japan, 47, 3, 285-288 , 47, 3, 285-288 2004 日本語 公開
J. Ishikawa, H. Tsuji, H. Satoh, Y. Gotoh J. Ishikawa, H. Tsuji, H. Satoh, Y. Gotoh J. Ishikawa, H. Tsuji, H. Satoh, Y. Gotoh Negative-ion implantation into polymers and its application to nerve regeneration guide tube Negative-ion implantation into polymers and its application to nerve regeneration guide tube Negative-ion implantation into polymers and its application to nerve regeneration guide tube Transactions - 7th World Biomaterials Congress, 641- Transactions - 7th World Biomaterials Congress, 641- Transactions - 7th World Biomaterials Congress, 641- 2004 英語 公開
H. Sato, H. Tsuji, H. Sasaki, S. Ikemura, Y. Gotoh, J. Ishikawa, S.-I. Nishimoto H. Sato, H. Tsuji, H. Sasaki, S. Ikemura, Y. Gotoh, J. Ishikawa, S.-I. Nishimoto H. Sato, H. Tsuji, H. Sasaki, S. Ikemura, Y. Gotoh, J. Ishikawa, S.-I. Nishimoto Selective neurite outgrowth on silver negative ion (Ag<sup>-</sup>)- implanted polystyrene surfaces Selective neurite outgrowth on silver negative ion (Ag<sup>-</sup>)- implanted polystyrene surfaces Selective neurite outgrowth on silver negative ion (Ag<sup>-</sup>)- implanted polystyrene surfaces Chinese Journal of Polymer Science (English Edition), 22, 1, 69-75 Chinese Journal of Polymer Science (English Edition), 22, 1, 69-75 Chinese Journal of Polymer Science (English Edition), 22, 1, 69-75 2003/12 英語 公開
M.Y. Liao, Y. Gotoh, H. Tsuji, J. Ishikawa M.Y. Liao, Y. Gotoh, H. Tsuji, J. Ishikawa M.Y. Liao, Y. Gotoh, H. Tsuji, J. Ishikawa Field electron emission from nanostructured heterogeneous HfN <sub>x</sub>O<sub>y</sub> films Field electron emission from nanostructured heterogeneous HfN <sub>x</sub>O<sub>y</sub> films Field electron emission from nanostructured heterogeneous HfN <sub>x</sub>O<sub>y</sub> films Applied Physics Letters, 83, 8, 1626-1628 Applied Physics Letters, 83, 8, 1626-1628 Applied Physics Letters, 83, 8, 1626-1628 2003/08/25 英語 公開
Y. Gotoh, T. Hagiwara, Y. Tanaka, H. Kubo, H. Tsuji, J. Ishikawa Y. Gotoh, T. Hagiwara, Y. Tanaka, H. Kubo, H. Tsuji, J. Ishikawa Y. Gotoh, T. Hagiwara, Y. Tanaka, H. Kubo, H. Tsuji, J. Ishikawa On the stability of electronic perturbations on a graphite surface produced by low-energy ion bombardment On the stability of electronic perturbations on a graphite surface produced by low-energy ion bombardment On the stability of electronic perturbations on a graphite surface produced by low-energy ion bombardment Materials Science and Engineering A, 353, 1-2, 6-11 Materials Science and Engineering A, 353, 1-2, 6-11 Materials Science and Engineering A, 353, 1-2, 6-11 2003/07/25 英語 公開
Gotoh, Y, Liao, MY, Tsuji, H, Ishikawa, J Gotoh, Y, Liao, MY, Tsuji, H, Ishikawa, J Gotoh, Y, Liao, MY, Tsuji, H, Ishikawa, J Formation and control of stoichiometric hafnium nitride thin films by direct sputtering of hafnium nitride target Formation and control of stoichiometric hafnium nitride thin films by direct sputtering of hafnium nitride target Formation and control of stoichiometric hafnium nitride thin films by direct sputtering of hafnium nitride target JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42, 7A, L778-L780 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42, 7A, L778-L780 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42, 7A, L778-L780 2003/07/01 英語 公開
Y. Gotoh, H. Tsuji, J. Ishikawa Y. Gotoh, H. Tsuji, J. Ishikawa Y. Gotoh, H. Tsuji, J. Ishikawa Measurement of work function of transition metal nitride and carbide thin films Measurement of work function of transition metal nitride and carbide thin films Measurement of work function of transition metal nitride and carbide thin films Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 21, 4, 1607-1611 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 21, 4, 1607-1611 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 21, 4, 1607-1611 2003/07 英語 公開
Y. Gotoh, K. Ishizu, H. Tsuji, J. Ishikawa Y. Gotoh, K. Ishizu, H. Tsuji, J. Ishikawa Y. Gotoh, K. Ishizu, H. Tsuji, J. Ishikawa In situ analyzer of electron emission properties: Fowler-Nordheim plotter and Seppen-Katamuki plotter In situ analyzer of electron emission properties: Fowler-Nordheim plotter and Seppen-Katamuki plotter In situ analyzer of electron emission properties: Fowler-Nordheim plotter and Seppen-Katamuki plotter Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 21, 4, 1524-1527 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 21, 4, 1524-1527 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 21, 4, 1524-1527 2003/07 英語 公開
N. Arai, H. Tsuji, M. Motono, Y. Gotoh, K. Adachi, H. Kotaki, J. Ishikawa N. Arai, H. Tsuji, M. Motono, Y. Gotoh, K. Adachi, H. Kotaki, J. Ishikawa N. Arai, H. Tsuji, M. Motono, Y. Gotoh, K. Adachi, H. Kotaki, J. Ishikawa Formation of silver nanoparticles in thin oxide layer on Si by negative-ion implantation Formation of silver nanoparticles in thin oxide layer on Si by negative-ion implantation Formation of silver nanoparticles in thin oxide layer on Si by negative-ion implantation Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 206, 629-633 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 206, 629-633 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 206, 629-633 2003/05 英語 公開
H. Tsuji, N. Arai, M. Motono, Y. Gotoh, K. Adachi, H. Kotaki, J. Ishikawa H. Tsuji, N. Arai, M. Motono, Y. Gotoh, K. Adachi, H. Kotaki, J. Ishikawa H. Tsuji, N. Arai, M. Motono, Y. Gotoh, K. Adachi, H. Kotaki, J. Ishikawa Study on optical reflection property from multilayer on Si substrate including nanoparticles in SiO<sub>2</sub> layer Study on optical reflection property from multilayer on Si substrate including nanoparticles in SiO<sub>2</sub> layer Study on optical reflection property from multilayer on Si substrate including nanoparticles in SiO<sub>2</sub> layer Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 206, 615-619 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 206, 615-619 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 206, 615-619 2003/05 英語 公開
H. Tsuji, M. Izukawa, R. Ikeguchi, R. Kakinoki, H. Sato, Y. Gotoh, J. Ishikawa H. Tsuji, M. Izukawa, R. Ikeguchi, R. Kakinoki, H. Sato, Y. Gotoh, J. Ishikawa H. Tsuji, M. Izukawa, R. Ikeguchi, R. Kakinoki, H. Sato, Y. Gotoh, J. Ishikawa Improvement of polydimethylsiloxane guide tube for nerve regeneration treatment by carbon negative-ion implantation Improvement of polydimethylsiloxane guide tube for nerve regeneration treatment by carbon negative-ion implantation Improvement of polydimethylsiloxane guide tube for nerve regeneration treatment by carbon negative-ion implantation Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 206, 507-511 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 206, 507-511 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 206, 507-511 2003/05 英語 公開
H. Tsuji, H. Sugahara, Y. Gotoh, J. Ishikawa H. Tsuji, H. Sugahara, Y. Gotoh, J. Ishikawa H. Tsuji, H. Sugahara, Y. Gotoh, J. Ishikawa Improvement of photocatalytic efficiency of rutile titania by silver negative-ion implantation Improvement of photocatalytic efficiency of rutile titania by silver negative-ion implantation Improvement of photocatalytic efficiency of rutile titania by silver negative-ion implantation Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 206, 249-253 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 206, 249-253 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 206, 249-253 2003/05 英語 公開
Sato, H, Tsuji, H, Izukawa, M, Sasaki, H, Utsumi, Y, Gotoh, Y, Ishikawa, J Sato, H, Tsuji, H, Izukawa, M, Sasaki, H, Utsumi, Y, Gotoh, Y, Ishikawa, J Sato, H, Tsuji, H, Izukawa, M, Sasaki, H, Utsumi, Y, Gotoh, Y, Ishikawa, J Protein adsorption on carbon-negative ion (C-)-implanted polystyrene as neuronal guidance. Protein adsorption on carbon-negative ion (C-)-implanted polystyrene as neuronal guidance. Protein adsorption on carbon-negative ion (C-)-implanted polystyrene as neuronal guidance. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 225, U713-U713 ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 225, U713-U713 ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 225, U713-U713 2003/03 英語 公開
K. Kobashi, Y. Nishibayashi, Y. Yokota, Y. Ando, T. Tachibana, N. Kawakami, K. Hayashi, K. Inoue, K. Meguro, I. Imai, H. Furuta, T. Hirao, K. Oura, Y. Gotoh, H. Nakahara, H. Tsuji, J. Ishikawa, F.A. Koeck, R.J. Nemanich, T. Sakai, N. Sakuma, H. Yoshida K. Kobashi, Y. Nishibayashi, Y. Yokota, Y. Ando, T. Tachibana, N. Kawakami, K. Hayashi, K. Inoue, K. Meguro, I. Imai, H. Furuta, T. Hirao, K. Oura, Y. Gotoh, H. Nakahara, H. Tsuji, J. Ishikawa, F.A. Koeck, R.J. Nemanich, T. Sakai, N. Sakuma, H. Yoshida K. Kobashi, Y. Nishibayashi, Y. Yokota, Y. Ando, T. Tachibana, N. Kawakami, K. Hayashi, K. Inoue, K. Meguro, I. Imai, H. Furuta, T. Hirao, K. Oura, Y. Gotoh, H. Nakahara, H. Tsuji, J. Ishikawa, F.A. Koeck, R.J. Nemanich, T. Sakai, N. Sakuma, H. Yoshida RandD of diamond films in the Frontier Carbon Technology Project and related topics RandD of diamond films in the Frontier Carbon Technology Project and related topics RandD of diamond films in the Frontier Carbon Technology Project and related topics Diamond and Related Materials, 12, 3-7, 233-240 Diamond and Related Materials, 12, 3-7, 233-240 Diamond and Related Materials, 12, 3-7, 233-240 2003/03 英語 公開
K. Kobashi, T. Tachibana, Y. Yokota, N. Kawakami, K. Hayashi, K. Yamamoto, Y. Koga, S. Fujiwara, Y. Gotoh, H. Nakahara, H. Tsuji, J. Ishikawa, F.A. Köck, R.J. Nemanich K. Kobashi, T. Tachibana, Y. Yokota, N. Kawakami, K. Hayashi, K. Yamamoto, Y. Koga, S. Fujiwara, Y. Gotoh, H. Nakahara, H. Tsuji, J. Ishikawa, F.A. Köck, R.J. Nemanich K. Kobashi, T. Tachibana, Y. Yokota, N. Kawakami, K. Hayashi, K. Yamamoto, Y. Koga, S. Fujiwara, Y. Gotoh, H. Nakahara, H. Tsuji, J. Ishikawa, F.A. Köck, R.J. Nemanich Fibrous structures on diamond and carbon surfaces formed by hydrogen plasma under direct-current bias and field electron-emission properties Fibrous structures on diamond and carbon surfaces formed by hydrogen plasma under direct-current bias and field electron-emission properties Fibrous structures on diamond and carbon surfaces formed by hydrogen plasma under direct-current bias and field electron-emission properties Journal of Materials Research, 18, 2, 305-326 Journal of Materials Research, 18, 2, 305-326 Journal of Materials Research, 18, 2, 305-326 2003/02 英語 公開
T. Shibahara, M. Abiko, Y. Gotoh, H. Tsuji, J. Ishikawa T. Shibahara, M. Abiko, Y. Gotoh, H. Tsuji, J. Ishikawa Development of ion beam assisted deposition system equipped with a low energy compact microwave ion source Development of ion beam assisted deposition system equipped with a low energy compact microwave ion source Shinku/Journal of the Vacuum Society of Japan, 46, 9, 708-711 Shinku/Journal of the Vacuum Society of Japan, 46, 9, 708-711 , 46, 9, 708-711 2003 日本語 公開
H. Tsuji, K. Kurita, Y. Gotoh, N. Kishimoto, J. Ishikawa H. Tsuji, K. Kurita, Y. Gotoh, N. Kishimoto, J. Ishikawa H. Tsuji, K. Kurita, Y. Gotoh, N. Kishimoto, J. Ishikawa Optical absorption properties of Cu and Ag double negative-ion implanted silica glass Optical absorption properties of Cu and Ag double negative-ion implanted silica glass Optical absorption properties of Cu and Ag double negative-ion implanted silica glass Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 195, 3-4, 315-319 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 195, 3-4, 315-319 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 195, 3-4, 315-319 2002/10 英語 公開
Y. Gotoh, K. Kagamimori, H. Tsuji, J. Ishikawa Y. Gotoh, K. Kagamimori, H. Tsuji, J. Ishikawa Y. Gotoh, K. Kagamimori, H. Tsuji, J. Ishikawa Ion beam assisted deposition of tantalum nitride thin films for vacuum microelectronics devices Ion beam assisted deposition of tantalum nitride thin films for vacuum microelectronics devices Ion beam assisted deposition of tantalum nitride thin films for vacuum microelectronics devices Surface and Coatings Technology, 158, 729-731 Surface and Coatings Technology, 158, 729-731 Surface and Coatings Technology, 158, 729-731 2002/09 英語 公開
H. Tsuji, H. Sasaki, Y. Utsumi, H. Sato, Y. Gotoh, J. Ishikawa H. Tsuji, H. Sasaki, Y. Utsumi, H. Sato, Y. Gotoh, J. Ishikawa H. Tsuji, H. Sasaki, Y. Utsumi, H. Sato, Y. Gotoh, J. Ishikawa Extracellular matrix absorption properties of negative ion-implanted polystyrene, polydimethylsiloxane and poly-lactic acid Extracellular matrix absorption properties of negative ion-implanted polystyrene, polydimethylsiloxane and poly-lactic acid Extracellular matrix absorption properties of negative ion-implanted polystyrene, polydimethylsiloxane and poly-lactic acid Surface and Coatings Technology, 158, 620-623 Surface and Coatings Technology, 158, 620-623 Surface and Coatings Technology, 158, 620-623 2002/09 英語 公開
H. Tsuji, T. Sagimori, K. Kurita, Y. Gotoh, J. Ishikawa H. Tsuji, T. Sagimori, K. Kurita, Y. Gotoh, J. Ishikawa H. Tsuji, T. Sagimori, K. Kurita, Y. Gotoh, J. Ishikawa Surface modification of TiO<sub>2</sub> (rutile) by metal negative ion implantation for improving catalytic properties Surface modification of TiO<sub>2</sub> (rutile) by metal negative ion implantation for improving catalytic properties Surface modification of TiO<sub>2</sub> (rutile) by metal negative ion implantation for improving catalytic properties Surface and Coatings Technology, 158, 208-213 Surface and Coatings Technology, 158, 208-213 Surface and Coatings Technology, 158, 208-213 2002/09 英語 公開
N. Kiwa, Y. Gotoh, H. Tsuji, J. Ishikawa N. Kiwa, Y. Gotoh, H. Tsuji, J. Ishikawa N. Kiwa, Y. Gotoh, H. Tsuji, J. Ishikawa Relationship between composition and work function of gold-samarium alloy thin films Relationship between composition and work function of gold-samarium alloy thin films Relationship between composition and work function of gold-samarium alloy thin films Vacuum, 66, 3-4, 517-521 Vacuum, 66, 3-4, 517-521 Vacuum, 66, 3-4, 517-521 2002/08/19 英語 公開
H. Tsuji, H. Sasaki, H. Sato, Y. Gotoh, J. Ishikawa H. Tsuji, H. Sasaki, H. Sato, Y. Gotoh, J. Ishikawa H. Tsuji, H. Sasaki, H. Sato, Y. Gotoh, J. Ishikawa Neuron attachment properties of carbon negative-ion implanted bioabsorbable polymer of poly-lactic acid Neuron attachment properties of carbon negative-ion implanted bioabsorbable polymer of poly-lactic acid Neuron attachment properties of carbon negative-ion implanted bioabsorbable polymer of poly-lactic acid Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 191, 815-819 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 191, 815-819 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 191, 815-819 2002/05 英語 公開
Y. Gotoh, K. Nakajima, T. Hagiwara, H. Tsuji, J. Ishikawa Y. Gotoh, K. Nakajima, T. Hagiwara, H. Tsuji, J. Ishikawa Y. Gotoh, K. Nakajima, T. Hagiwara, H. Tsuji, J. Ishikawa Energy distribution of the compact microwave ion source for extremely low voltage ion extraction Energy distribution of the compact microwave ion source for extremely low voltage ion extraction Energy distribution of the compact microwave ion source for extremely low voltage ion extraction Review of Scientific Instruments, 73, 2, 758-760 Review of Scientific Instruments, 73, 2, 758-760 Review of Scientific Instruments, 73, 2, 758-760 2002/02 英語 公開
M. Izukawa, H. Tsuji, H. Sato, H. Sasaki, Y. Gotoh, J. Ishikawa M. Izukawa, H. Tsuji, H. Sato, H. Sasaki, Y. Gotoh, J. Ishikawa M. Izukawa, H. Tsuji, H. Sato, H. Sasaki, Y. Gotoh, J. Ishikawa Nerve cell attachment property of absorbable poly-lactic-acid modified by carbon negative-ion implantation Nerve cell attachment property of absorbable poly-lactic-acid modified by carbon negative-ion implantation Nerve cell attachment property of absorbable poly-lactic-acid modified by carbon negative-ion implantation Shinku/Journal of the Vacuum Society of Japan, 45, 6, 514-518 Shinku/Journal of the Vacuum Society of Japan, 45, 6, 514-518 Shinku/Journal of the Vacuum Society of Japan, 45, 6, 514-518 2002 英語 公開
H. Tsuji, K. Kurita, M. Motono, H. Sugahara, Y. Gotoh, N. Kishimoto, J. Ishikawa H. Tsuji, K. Kurita, M. Motono, H. Sugahara, Y. Gotoh, N. Kishimoto, J. Ishikawa Control of optical absorption band due to Cu/Ag nanoparticles in SiO<sub>2</sub> glass by dual ion implantation of Cu<sup>-</sup> and Ag<sup>-</sup> Control of optical absorption band due to Cu/Ag nanoparticles in SiO<sub>2</sub> glass by dual ion implantation of Cu<sup>-</sup> and Ag<sup>-</sup> Shinku/Journal of the Vacuum Society of Japan, 45, 6, 528-532 Shinku/Journal of the Vacuum Society of Japan, 45, 6, 528-532 , 45, 6, 528-532 2002 日本語 公開
H. Tsuji, H. Sugahara, T. Sagimori, M. Motono, Y. Gotoh, J. Ishikawa H. Tsuji, H. Sugahara, T. Sagimori, M. Motono, Y. Gotoh, J. Ishikawa H. Tsuji, H. Sugahara, T. Sagimori, M. Motono, Y. Gotoh, J. Ishikawa Improvement of photocatalytic efficiencies of rutile TiO<sub>2</sub> by metal negative ion implantation Improvement of photocatalytic efficiencies of rutile TiO<sub>2</sub> by metal negative ion implantation Improvement of photocatalytic efficiencies of rutile TiO<sub>2</sub> by metal negative ion implantation Shinku/Journal of the Vacuum Society of Japan, 45, 3, 177-180 Shinku/Journal of the Vacuum Society of Japan, 45, 3, 177-180 Shinku/Journal of the Vacuum Society of Japan, 45, 3, 177-180 2002 英語 公開
Y. Gotoh, N. Kiwa, H. Tsuji, J. Ishikawa Y. Gotoh, N. Kiwa, H. Tsuji, J. Ishikawa Evaluation of hafnium and tantalum nitride thin films prepared by magnetron sputter deposition with a nitride target Evaluation of hafnium and tantalum nitride thin films prepared by magnetron sputter deposition with a nitride target Shinku/Journal of the Vacuum Society of Japan, 45, 3, 309-312 Shinku/Journal of the Vacuum Society of Japan, 45, 3, 309-312 , 45, 3, 309-312 2002 日本語 公開
Y. Gotoh, H. Tsuji, J. Ishikawa Y. Gotoh, H. Tsuji, J. Ishikawa Y. Gotoh, H. Tsuji, J. Ishikawa On the increase of the intensity ratio of doubly charged ions to singly charged ions for liquid gold and copper ion sources On the increase of the intensity ratio of doubly charged ions to singly charged ions for liquid gold and copper ion sources On the increase of the intensity ratio of doubly charged ions to singly charged ions for liquid gold and copper ion sources Ultramicroscopy, 89, 1-3, 69-74 Ultramicroscopy, 89, 1-3, 69-74 Ultramicroscopy, 89, 1-3, 69-74 2001/10 英語 公開
Y. Gotoh, H. Tsuji, J. Ishikawa Y. Gotoh, H. Tsuji, J. Ishikawa Y. Gotoh, H. Tsuji, J. Ishikawa Relationships among the physical parameters required to give a linear relation between slope and intercept of Fowler-Nordheim plots Relationships among the physical parameters required to give a linear relation between slope and intercept of Fowler-Nordheim plots Relationships among the physical parameters required to give a linear relation between slope and intercept of Fowler-Nordheim plots Ultramicroscopy, 89, 1-3, 63-67 Ultramicroscopy, 89, 1-3, 63-67 Ultramicroscopy, 89, 1-3, 63-67 2001/10 英語 公開
Y. Gotoh, Y. Kashiwagi, M. Nagao, T. Kondo, H. Tsuji, J. Ishikawa Y. Gotoh, Y. Kashiwagi, M. Nagao, T. Kondo, H. Tsuji, J. Ishikawa Y. Gotoh, Y. Kashiwagi, M. Nagao, T. Kondo, H. Tsuji, J. Ishikawa Fabrication of gated niobium nitride field emitter array Fabrication of gated niobium nitride field emitter array Fabrication of gated niobium nitride field emitter array Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 19, 4, 1373-1376 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 19, 4, 1373-1376 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 19, 4, 1373-1376 2001/07 英語 公開
Y. Gotoh, H. Tsuji, J. Ishikawa Y. Gotoh, H. Tsuji, J. Ishikawa Y. Gotoh, H. Tsuji, J. Ishikawa Relationship between work function and current fluctuation of field emitters: Use of SK chart for evaluation of work function Relationship between work function and current fluctuation of field emitters: Use of SK chart for evaluation of work function Relationship between work function and current fluctuation of field emitters: Use of SK chart for evaluation of work function Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 19, 3, 992-994 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 19, 3, 992-994 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 19, 3, 992-994 2001/05 英語 公開
Y. Gotoh, D. Nozaki, H. Tsuji, J. Ishikawa, T. Nakatani, T. Sakashita, K. Betsui Y. Gotoh, D. Nozaki, H. Tsuji, J. Ishikawa, T. Nakatani, T. Sakashita, K. Betsui Y. Gotoh, D. Nozaki, H. Tsuji, J. Ishikawa, T. Nakatani, T. Sakashita, K. Betsui Emission characteristics of Spindt-type platinum field emitters improved by operation in carbon monoxide ambient Emission characteristics of Spindt-type platinum field emitters improved by operation in carbon monoxide ambient Emission characteristics of Spindt-type platinum field emitters improved by operation in carbon monoxide ambient Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 19, 3, 912-915 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 19, 3, 912-915 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 19, 3, 912-915 2001/05 英語 公開
H. Sasaki, H. Tsuji, H. Sato, Y. Gotoh, J. Ishikawa H. Sasaki, H. Tsuji, H. Sato, Y. Gotoh, J. Ishikawa Observation of negative-ion-implanted polystyrene by atomic force microscope for improvement of neural attachment properties Observation of negative-ion-implanted polystyrene by atomic force microscope for improvement of neural attachment properties Shinku/Journal of the Vacuum Society of Japan, 44, 3, 217-220 Shinku/Journal of the Vacuum Society of Japan, 44, 3, 217-220 , 44, 3, 217-220 2001 日本語 公開
H. Tsuji, T. Sagimori, K. Kurita, Y. Gotoh, J. Ishikawa H. Tsuji, T. Sagimori, K. Kurita, Y. Gotoh, J. Ishikawa Optical absorption properties of copper-negative-ion implanted titanium dioxide and formation of copper nanoparticles Optical absorption properties of copper-negative-ion implanted titanium dioxide and formation of copper nanoparticles Shinku/Journal of the Vacuum Society of Japan, 44, 3, 225-227 Shinku/Journal of the Vacuum Society of Japan, 44, 3, 225-227 , 44, 3, 225-227 2001 日本語 公開
Y. Gotoh, D. Nozaki, H. Tsuji, J. Ishikawa, T. Nakatani, T. Sakashita, K. Betsui Y. Gotoh, D. Nozaki, H. Tsuji, J. Ishikawa, T. Nakatani, T. Sakashita, K. Betsui Y. Gotoh, D. Nozaki, H. Tsuji, J. Ishikawa, T. Nakatani, T. Sakashita, K. Betsui Significant improvement of the emission property of Spindt-type platinum field emitters by operation in carbon monoxide ambient Significant improvement of the emission property of Spindt-type platinum field emitters by operation in carbon monoxide ambient Significant improvement of the emission property of Spindt-type platinum field emitters by operation in carbon monoxide ambient Applied Physics Letters, 77, 4, 588-590 Applied Physics Letters, 77, 4, 588-590 Applied Physics Letters, 77, 4, 588-590 2000/07/24 英語 公開
H. Tsuji, H. Sato, T. Baba, S. Ikemura, Y. Gotoh, J. Ishikawa H. Tsuji, H. Sato, T. Baba, S. Ikemura, Y. Gotoh, J. Ishikawa H. Tsuji, H. Sato, T. Baba, S. Ikemura, Y. Gotoh, J. Ishikawa Neuron cell positioning on polystyrene in culture by silver-negative ion implantation and region control of neural outgrowth Neuron cell positioning on polystyrene in culture by silver-negative ion implantation and region control of neural outgrowth Neuron cell positioning on polystyrene in culture by silver-negative ion implantation and region control of neural outgrowth Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 166, 815-819 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 166, 815-819 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 166, 815-819 2000/05 英語 公開
Y. Gotoh, T. Kondo, M. Nagao, H. Tsuji, J. Ishikawa, K. Hayashi, K. Kobashi Y. Gotoh, T. Kondo, M. Nagao, H. Tsuji, J. Ishikawa, K. Hayashi, K. Kobashi Y. Gotoh, T. Kondo, M. Nagao, H. Tsuji, J. Ishikawa, K. Hayashi, K. Kobashi Estimation of emission field and emission site of boron-doped diamond thin-film field emitters Estimation of emission field and emission site of boron-doped diamond thin-film field emitters Estimation of emission field and emission site of boron-doped diamond thin-film field emitters Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 18, 2, 1018-1023 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 18, 2, 1018-1023 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 18, 2, 1018-1023 2000/03 英語 公開
Y. Gotoh, H. Kubo, H. Tsuji, J. Ishikawa Y. Gotoh, H. Kubo, H. Tsuji, J. Ishikawa Y. Gotoh, H. Kubo, H. Tsuji, J. Ishikawa Compact microwave ion source for extremely low energy ion irradiation system Compact microwave ion source for extremely low energy ion irradiation system Compact microwave ion source for extremely low energy ion irradiation system Review of Scientific Instruments, 71, 2, 1160-1162 Review of Scientific Instruments, 71, 2, 1160-1162 Review of Scientific Instruments, 71, 2, 1160-1162 2000/02 英語 公開
Y. Gotoh, H. Tsuji, J. Ishikawa Y. Gotoh, H. Tsuji, J. Ishikawa Y. Gotoh, H. Tsuji, J. Ishikawa Application of compact microwave ion source to low temperature growth of transition metal nitride thin films for vacuum microelectronics devices Application of compact microwave ion source to low temperature growth of transition metal nitride thin films for vacuum microelectronics devices Application of compact microwave ion source to low temperature growth of transition metal nitride thin films for vacuum microelectronics devices Review of Scientific Instruments, 71, 2, 1002-1005 Review of Scientific Instruments, 71, 2, 1002-1005 Review of Scientific Instruments, 71, 2, 1002-1005 2000/02 英語 公開
H. Tsuji, S. Kido, H. Sasaki, Y. Gotoh, J. Ishikawa H. Tsuji, S. Kido, H. Sasaki, Y. Gotoh, J. Ishikawa H. Tsuji, S. Kido, H. Sasaki, Y. Gotoh, J. Ishikawa Negative-ion implanter for powders and its application to nanometer-sized metal particle formation in the surface of glass beads Negative-ion implanter for powders and its application to nanometer-sized metal particle formation in the surface of glass beads Negative-ion implanter for powders and its application to nanometer-sized metal particle formation in the surface of glass beads Review of Scientific Instruments, 71, 2, 804-806 Review of Scientific Instruments, 71, 2, 804-806 Review of Scientific Instruments, 71, 2, 804-806 2000/02 英語 公開
H. Tsuji, H. Sato, T. Baba, Y. Gotoh, J. Ishikawa H. Tsuji, H. Sato, T. Baba, Y. Gotoh, J. Ishikawa H. Tsuji, H. Sato, T. Baba, Y. Gotoh, J. Ishikawa A negative ion beam application to artificial formation of neuron network in culture A negative ion beam application to artificial formation of neuron network in culture A negative ion beam application to artificial formation of neuron network in culture Review of Scientific Instruments, 71, 2, 797-799 Review of Scientific Instruments, 71, 2, 797-799 Review of Scientific Instruments, 71, 2, 797-799 2000/02 英語 公開
Y. Gotoh, H. Tsuji, J. Ishikawa Y. Gotoh, H. Tsuji, J. Ishikawa Y. Gotoh, H. Tsuji, J. Ishikawa Molecular ion implanter equipped with liquid-metal alloy ion source Molecular ion implanter equipped with liquid-metal alloy ion source Molecular ion implanter equipped with liquid-metal alloy ion source Review of Scientific Instruments, 71, 2, 780-782 Review of Scientific Instruments, 71, 2, 780-782 Review of Scientific Instruments, 71, 2, 780-782 2000/02 英語 公開
Y. Gotoh, H. Tsuji, J. Ishikawa Y. Gotoh, H. Tsuji, J. Ishikawa Y. Gotoh, H. Tsuji, J. Ishikawa Criterion for decrease of electric field at ionization point of liquid-metal ion sources Criterion for decrease of electric field at ionization point of liquid-metal ion sources Criterion for decrease of electric field at ionization point of liquid-metal ion sources Review of Scientific Instruments, 71, 2, 725-727 Review of Scientific Instruments, 71, 2, 725-727 Review of Scientific Instruments, 71, 2, 725-727 2000/02 英語 公開
T. Hagiwara, H. Kubo, Y. Gotoh, H. Tsuji, J. Ishikawa T. Hagiwara, H. Kubo, Y. Gotoh, H. Tsuji, J. Ishikawa T. Hagiwara, H. Kubo, Y. Gotoh, H. Tsuji, J. Ishikawa Extended Huckel molecular orbital calculation of electron density of graphite surface with atomic displacement Extended Huckel molecular orbital calculation of electron density of graphite surface with atomic displacement Extended Huckel molecular orbital calculation of electron density of graphite surface with atomic displacement Shinku/Journal of the Vacuum Society of Japan, 43, 5, 607-610 Shinku/Journal of the Vacuum Society of Japan, 43, 5, 607-610 Shinku/Journal of the Vacuum Society of Japan, 43, 5, 607-610 2000 英語 公開
Y. Gotoh, N. Fujita, H. Tsuji, J. Ishikawa, S. Nagamachi, M. Ueda Y. Gotoh, N. Fujita, H. Tsuji, J. Ishikawa, S. Nagamachi, M. Ueda Y. Gotoh, N. Fujita, H. Tsuji, J. Ishikawa, S. Nagamachi, M. Ueda Self-aligned formation of a vertical-type micro field emitter with a volcano-shaped gate electrode protruding towards the cathode by focused ion-beam sputter etching and deposition Self-aligned formation of a vertical-type micro field emitter with a volcano-shaped gate electrode protruding towards the cathode by focused ion-beam sputter etching and deposition Self-aligned formation of a vertical-type micro field emitter with a volcano-shaped gate electrode protruding towards the cathode by focused ion-beam sputter etching and deposition Journal of Micromechanics and Microengineering, 9, 4, 364-368 Journal of Micromechanics and Microengineering, 9, 4, 364-368 Journal of Micromechanics and Microengineering, 9, 4, 364-368 1999/12 英語 公開
H. Tsuji, S. Nakamura, Y. Gotoh, J. Ishikawa H. Tsuji, S. Nakamura, Y. Gotoh, J. Ishikawa H. Tsuji, S. Nakamura, Y. Gotoh, J. Ishikawa Dependence of carbon interatomic bonds on incident ion energy in carbon negative ion beam deposited films Dependence of carbon interatomic bonds on incident ion energy in carbon negative ion beam deposited films Dependence of carbon interatomic bonds on incident ion energy in carbon negative ion beam deposited films Thin Solid Films, 343, 17-20 Thin Solid Films, 343, 17-20 Thin Solid Films, 343, 17-20 1999/04 英語 公開
H. Tsuji, H. Satoh, S. Ikeda, S. Ikemura, Y. Gotoh, J. Ishikawa H. Tsuji, H. Satoh, S. Ikeda, S. Ikemura, Y. Gotoh, J. Ishikawa H. Tsuji, H. Satoh, S. Ikeda, S. Ikemura, Y. Gotoh, J. Ishikawa Negative-ion beam surface modification of tissue-culture polystyrene dishes for changing hydrophilic and cell-attachment properties Negative-ion beam surface modification of tissue-culture polystyrene dishes for changing hydrophilic and cell-attachment properties Negative-ion beam surface modification of tissue-culture polystyrene dishes for changing hydrophilic and cell-attachment properties Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 148, 1-4, 1136-1140 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 148, 1-4, 1136-1140 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 148, 1-4, 1136-1140 1999/01 英語 公開
H. Tsuji, T. Yoshihara, S. Nakamura, Y. Gotoh, J. Ishikawa H. Tsuji, T. Yoshihara, S. Nakamura, Y. Gotoh, J. Ishikawa H. Tsuji, T. Yoshihara, S. Nakamura, Y. Gotoh, J. Ishikawa CN molecular negative-ion beam deposition and ion energy dependence of atomic bonds between carbon and nitrogen in the films CN molecular negative-ion beam deposition and ion energy dependence of atomic bonds between carbon and nitrogen in the films CN molecular negative-ion beam deposition and ion energy dependence of atomic bonds between carbon and nitrogen in the films Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 148, 1-4, 650-654 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 148, 1-4, 650-654 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 148, 1-4, 650-654 1999/01 英語 公開
H. Tsuji, S. Ikemura, H. Sato, Y. Gotoh, J. Ishikawa H. Tsuji, S. Ikemura, H. Sato, Y. Gotoh, J. Ishikawa Modification of cell attachment properties of tissue-culture polystyrene surface by silver-negative-ion implantation Modification of cell attachment properties of tissue-culture polystyrene surface by silver-negative-ion implantation Shinku/Journal of the Vacuum Society of Japan, 42, 3, 237-240 Shinku/Journal of the Vacuum Society of Japan, 42, 3, 237-240 , 42, 3, 237-240 1999 日本語 公開
H. Tsuji, S. Nakamura, T. Yoshihara, Y. Gotoh, J. Ishikawa H. Tsuji, S. Nakamura, T. Yoshihara, Y. Gotoh, J. Ishikawa H. Tsuji, S. Nakamura, T. Yoshihara, Y. Gotoh, J. Ishikawa Ion energy dependence of inter-atomic bonding state of carbon films deposited by low-energy carbon-negative ion beam Ion energy dependence of inter-atomic bonding state of carbon films deposited by low-energy carbon-negative ion beam Ion energy dependence of inter-atomic bonding state of carbon films deposited by low-energy carbon-negative ion beam Shinku/Journal of the Vacuum Society of Japan, 42, 3, 221-224 Shinku/Journal of the Vacuum Society of Japan, 42, 3, 221-224 Shinku/Journal of the Vacuum Society of Japan, 42, 3, 221-224 1999 英語 公開
S. Kido, M. Mimura, H. Tsuji, Y. Gotoh, J. Ishikawa S. Kido, M. Mimura, H. Tsuji, Y. Gotoh, J. Ishikawa Evaluation of uniformity and depth profiles in negative-ion implantation into spherical powders Evaluation of uniformity and depth profiles in negative-ion implantation into spherical powders Shinku/Journal of the Vacuum Society of Japan, 42, 3, 345-348 Shinku/Journal of the Vacuum Society of Japan, 42, 3, 345-348 , 42, 3, 345-348 1999 日本語 公開
Y. Gotoh, M. Nagao, T. Ura, H. Tsuji, J. Ishikawa Y. Gotoh, M. Nagao, T. Ura, H. Tsuji, J. Ishikawa Electron emission characteristics of niobium nitride field emitters prepared by ion beam assisted deposition Electron emission characteristics of niobium nitride field emitters prepared by ion beam assisted deposition Shinku/Journal of the Vacuum Society of Japan, 42, 3, 309-312 Shinku/Journal of the Vacuum Society of Japan, 42, 3, 309-312 , 42, 3, 309-312 1999 日本語 公開
Y. Gotoh, T. Ura, M. Nagao, H. Tsuji, J. Ishikawa Y. Gotoh, T. Ura, M. Nagao, H. Tsuji, J. Ishikawa Properties of niobium nitride thin films as a candidate for cathode material of vacuum microelectronics devices Properties of niobium nitride thin films as a candidate for cathode material of vacuum microelectronics devices Shinku/Journal of the Vacuum Society of Japan, 42, 3, 305-308 Shinku/Journal of the Vacuum Society of Japan, 42, 3, 305-308 , 42, 3, 305-308 1999 日本語 公開
Y. Gotoh, M. Nagao, T. Ura, H. Tsuji, J. Ishikawa Y. Gotoh, M. Nagao, T. Ura, H. Tsuji, J. Ishikawa Y. Gotoh, M. Nagao, T. Ura, H. Tsuji, J. Ishikawa Ion beam assisted deposition of niobium nitride thin films for vacuum microelectronics devices Ion beam assisted deposition of niobium nitride thin films for vacuum microelectronics devices Ion beam assisted deposition of niobium nitride thin films for vacuum microelectronics devices Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 148, 1-4, 925-929 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 148, 1-4, 925-929 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 148, 1-4, 925-929 1999 英語 公開
Y. Gotoh, H. Tsuji, J. Ishikawa Y. Gotoh, H. Tsuji, J. Ishikawa Y. Gotoh, H. Tsuji, J. Ishikawa Theoretical approach to liquid-metal field-emission electron sources Theoretical approach to liquid-metal field-emission electron sources Theoretical approach to liquid-metal field-emission electron sources Applied Surface Science, 146, 1, 377-381 Applied Surface Science, 146, 1, 377-381 Applied Surface Science, 146, 1, 377-381 1999 英語 公開
M. Nagao, K. Utsumi, Y. Gotoh, H. Tsuji, J. Ishikawa, T. Nakatani, T. Sakashita, K. Betsui M. Nagao, K. Utsumi, Y. Gotoh, H. Tsuji, J. Ishikawa, T. Nakatani, T. Sakashita, K. Betsui M. Nagao, K. Utsumi, Y. Gotoh, H. Tsuji, J. Ishikawa, T. Nakatani, T. Sakashita, K. Betsui Dependence of emission characteristics of Spindt-type field emitters on cathode material Dependence of emission characteristics of Spindt-type field emitters on cathode material Dependence of emission characteristics of Spindt-type field emitters on cathode material Applied Surface Science, 146, 1, 182-186 Applied Surface Science, 146, 1, 182-186 Applied Surface Science, 146, 1, 182-186 1999 英語 公開
H. Tsuji, H. Satoh, S. Ikeda, N. Ikemoto, Y. Gotoh, J. Ishikawa H. Tsuji, H. Satoh, S. Ikeda, N. Ikemoto, Y. Gotoh, J. Ishikawa H. Tsuji, H. Satoh, S. Ikeda, N. Ikemoto, Y. Gotoh, J. Ishikawa Surface modification by silver-negative-ion implantation for controlling cell-adhesion properties of polystyrene Surface modification by silver-negative-ion implantation for controlling cell-adhesion properties of polystyrene Surface modification by silver-negative-ion implantation for controlling cell-adhesion properties of polystyrene Surface and Coatings Technology, 104, 124-128 Surface and Coatings Technology, 104, 124-128 Surface and Coatings Technology, 104, 124-128 1998/05 英語 公開
H. Tsuji, Y. Gotoh, J. Ishikawa H. Tsuji, Y. Gotoh, J. Ishikawa H. Tsuji, Y. Gotoh, J. Ishikawa Secondary electron emission and surface potential of SiO<sub>2</sub> film surface by negative ion bombardment Secondary electron emission and surface potential of SiO<sub>2</sub> film surface by negative ion bombardment Secondary electron emission and surface potential of SiO<sub>2</sub> film surface by negative ion bombardment Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 141, 1-4, 645-651 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 141, 1-4, 645-651 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 141, 1-4, 645-651 1998/05 英語 公開
H. Tsuji, H. Satoh, S. Ikeda, Y. Gotoh, J. Ishikawa H. Tsuji, H. Satoh, S. Ikeda, Y. Gotoh, J. Ishikawa H. Tsuji, H. Satoh, S. Ikeda, Y. Gotoh, J. Ishikawa Contact angle lowering of polystyrene surface by silver-negative-ion implantation for improving biocompatibility and introduced atomic bond evaluation by XPS Contact angle lowering of polystyrene surface by silver-negative-ion implantation for improving biocompatibility and introduced atomic bond evaluation by XPS Contact angle lowering of polystyrene surface by silver-negative-ion implantation for improving biocompatibility and introduced atomic bond evaluation by XPS Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 141, 1-4, 197-201 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 141, 1-4, 197-201 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 141, 1-4, 197-201 1998/05 英語 公開
J. Ishikawa, H. Tsuji, M. Mimura, S. Ikemura, Y. Gotoh J. Ishikawa, H. Tsuji, M. Mimura, S. Ikemura, Y. Gotoh J. Ishikawa, H. Tsuji, M. Mimura, S. Ikemura, Y. Gotoh Non-scattering technique of ion-implantation into vibrated micro-powders by using a negative-ion beam Non-scattering technique of ion-implantation into vibrated micro-powders by using a negative-ion beam Non-scattering technique of ion-implantation into vibrated micro-powders by using a negative-ion beam Surface and Coatings Technology, 103-104, 173-177 Surface and Coatings Technology, 103-104, 173-177 Surface and Coatings Technology, 103-104, 173-177 1998 英語 公開
J. Ishikawa, Y. Gotoh, S. Sadakane, K. Inoue, M. Nagao, H. Tsuji J. Ishikawa, Y. Gotoh, S. Sadakane, K. Inoue, M. Nagao, H. Tsuji J. Ishikawa, Y. Gotoh, S. Sadakane, K. Inoue, M. Nagao, H. Tsuji Emission stability analysis of cone-shaped metal-insulator-semiconductor cathode by Monte Carlo simulation Emission stability analysis of cone-shaped metal-insulator-semiconductor cathode by Monte Carlo simulation Emission stability analysis of cone-shaped metal-insulator-semiconductor cathode by Monte Carlo simulation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 16, 2, 895-899 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 16, 2, 895-899 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 16, 2, 895-899 1998 英語 公開
K. Inoue, Y. Gotoh, Y. Fujimori, M. Nagao, S. Sadakane, H. Tsuji, J. Ishikawa K. Inoue, Y. Gotoh, Y. Fujimori, M. Nagao, S. Sadakane, H. Tsuji, J. Ishikawa K. Inoue, Y. Gotoh, Y. Fujimori, M. Nagao, S. Sadakane, H. Tsuji, J. Ishikawa Monte Carlo simulation of emission efficiency of cone-shaped metal-insulator-semiconductor cathode Monte Carlo simulation of emission efficiency of cone-shaped metal-insulator-semiconductor cathode Monte Carlo simulation of emission efficiency of cone-shaped metal-insulator-semiconductor cathode Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 37, 10, 5719-5725 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 37, 10, 5719-5725 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 37, 10, 5719-5725 1998 英語 公開
Y. Gotoh, H. Tsuji, J. Ishikawa Y. Gotoh, H. Tsuji, J. Ishikawa Y. Gotoh, H. Tsuji, J. Ishikawa Rate of decrease in the intensity ratio of doubly charged ions to singly charged ions in liquid-metal ion source with gold-based alloy Rate of decrease in the intensity ratio of doubly charged ions to singly charged ions in liquid-metal ion source with gold-based alloy Rate of decrease in the intensity ratio of doubly charged ions to singly charged ions in liquid-metal ion source with gold-based alloy Ultramicroscopy, 73, 1-4, 83-87 Ultramicroscopy, 73, 1-4, 83-87 Ultramicroscopy, 73, 1-4, 83-87 1998 英語 公開
T. Kozawa, M. Suzuki, Y. Taga, Y. Gotoh, J. Ishikawa T. Kozawa, M. Suzuki, Y. Taga, Y. Gotoh, J. Ishikawa T. Kozawa, M. Suzuki, Y. Taga, Y. Gotoh, J. Ishikawa Fabrication of GaN field emitter arrays by selective area growth technique Fabrication of GaN field emitter arrays by selective area growth technique Fabrication of GaN field emitter arrays by selective area growth technique Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 16, 2, 833-835 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 16, 2, 833-835 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 16, 2, 833-835 1998 英語 公開
M. Nagao, Y. Fujimori, Y. Gotoh, H. Tsuji, J. Ishikawa M. Nagao, Y. Fujimori, Y. Gotoh, H. Tsuji, J. Ishikawa M. Nagao, Y. Fujimori, Y. Gotoh, H. Tsuji, J. Ishikawa Emission characteristics of ZrN thin film field emitter array fabricated by ion beam assisted deposition technique Emission characteristics of ZrN thin film field emitter array fabricated by ion beam assisted deposition technique Emission characteristics of ZrN thin film field emitter array fabricated by ion beam assisted deposition technique Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 16, 2, 829-832 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 16, 2, 829-832 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 16, 2, 829-832 1998 英語 公開
Y. Gotoh, T. Kashiwagi, H. Tsuji, J. Ishikawa Y. Gotoh, T. Kashiwagi, H. Tsuji, J. Ishikawa Y. Gotoh, T. Kashiwagi, H. Tsuji, J. Ishikawa Empirical relation between electric field at the ionization point and emission current of liquid copper, gold, germanium, and tin ion sources Empirical relation between electric field at the ionization point and emission current of liquid copper, gold, germanium, and tin ion sources Empirical relation between electric field at the ionization point and emission current of liquid copper, gold, germanium, and tin ion sources Applied Physics A: Materials Science and Processing, 64, 5, 527-532 Applied Physics A: Materials Science and Processing, 64, 5, 527-532 Applied Physics A: Materials Science and Processing, 64, 5, 527-532 1997/05 英語 公開
J. Ishikawa, H. Tsuji, S. Ikeda, Y. Gotoh J. Ishikawa, H. Tsuji, S. Ikeda, Y. Gotoh J. Ishikawa, H. Tsuji, S. Ikeda, Y. Gotoh Study on emission yields of negative- and positive-ion induced secondary electron from thin SiO<sub>2</sub> film Study on emission yields of negative- and positive-ion induced secondary electron from thin SiO<sub>2</sub> film Study on emission yields of negative- and positive-ion induced secondary electron from thin SiO<sub>2</sub> film Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 127, 282-285 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 127, 282-285 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 127, 282-285 1997/05 英語 公開
H. Tsuji, J. Ishikawa, S. Ikeda, Y. Gotoh H. Tsuji, J. Ishikawa, S. Ikeda, Y. Gotoh H. Tsuji, J. Ishikawa, S. Ikeda, Y. Gotoh Slightly negative surface potential and charging model of insulator in the negative-ion implantation Slightly negative surface potential and charging model of insulator in the negative-ion implantation Slightly negative surface potential and charging model of insulator in the negative-ion implantation Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 127, 278-281 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 127, 278-281 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 127, 278-281 1997/05 英語 公開
H. Tsuji, T. Tomita, Y. Gotoh, J. Ishikawa H. Tsuji, T. Tomita, Y. Gotoh, J. Ishikawa CN molecular negative-ion extraction properties from RF plasma-sputter-type heavy negative-ion source and CN negative-ion beam deposition CN molecular negative-ion extraction properties from RF plasma-sputter-type heavy negative-ion source and CN negative-ion beam deposition Shinku/Journal of the Vacuum Society of Japan, 40, 3, 284-287 Shinku/Journal of the Vacuum Society of Japan, 40, 3, 284-287 , 40, 3, 284-287 1997 日本語 公開
M. Nagao, Y. Gotoh, H. Tuji, J. Ishikawa M. Nagao, Y. Gotoh, H. Tuji, J. Ishikawa Noise power analysis of the stability of micro-field emitters Noise power analysis of the stability of micro-field emitters Shinku/Journal of the Vacuum Society of Japan, 40, 3, 159-162 Shinku/Journal of the Vacuum Society of Japan, 40, 3, 159-162 , 40, 3, 159-162 1997 日本語 公開
M. Nagao, T. Kondo, Y. Gotoh, H. Tsuji, J. Ishikawa, K. Miyata, K. Kobashi M. Nagao, T. Kondo, Y. Gotoh, H. Tsuji, J. Ishikawa, K. Miyata, K. Kobashi M. Nagao, T. Kondo, Y. Gotoh, H. Tsuji, J. Ishikawa, K. Miyata, K. Kobashi Stability of field emission current from boron-doped diamond thin films terminated with hydrogen and oxygen Stability of field emission current from boron-doped diamond thin films terminated with hydrogen and oxygen Stability of field emission current from boron-doped diamond thin films terminated with hydrogen and oxygen Japanese Journal of Applied Physics, Part 2: Letters, 36, 9 A/B, L1250-L1253 Japanese Journal of Applied Physics, Part 2: Letters, 36, 9 A/B, L1250-L1253 Japanese Journal of Applied Physics, Part 2: Letters, 36, 9 A/B, L1250-L1253 1997 英語 公開
M. Nagao, T. Kondo, Y. Gotoh, H. Tsuji, J. Ishikawa, K. Miyata, K. Kobashi M. Nagao, T. Kondo, Y. Gotoh, H. Tsuji, J. Ishikawa, K. Miyata, K. Kobashi M. Nagao, T. Kondo, Y. Gotoh, H. Tsuji, J. Ishikawa, K. Miyata, K. Kobashi Influence of surface treatment and dopant concentration on field emission characteristics of boron-doped diamond thin films Influence of surface treatment and dopant concentration on field emission characteristics of boron-doped diamond thin films Influence of surface treatment and dopant concentration on field emission characteristics of boron-doped diamond thin films Applied Physics Letters, 71, 19, 2806-2808 Applied Physics Letters, 71, 19, 2806-2808 Applied Physics Letters, 71, 19, 2806-2808 1997 英語 公開
Y. Gotoh, H. Yoshii, T. Amioka, K. Kameyama, H. Tsuji, J. Ishikawa Y. Gotoh, H. Yoshii, T. Amioka, K. Kameyama, H. Tsuji, J. Ishikawa Y. Gotoh, H. Yoshii, T. Amioka, K. Kameyama, H. Tsuji, J. Ishikawa Structures and properties of copper thin films prepared by ion beam assisted deposition Structures and properties of copper thin films prepared by ion beam assisted deposition Structures and properties of copper thin films prepared by ion beam assisted deposition Thin Solid Films, 288, 1-2, 300-308 Thin Solid Films, 288, 1-2, 300-308 Thin Solid Films, 288, 1-2, 300-308 1996/11/15 英語 公開
Y. Toyota, H. Tsuji, Y. Gotoh, J. Ishikawa Y. Toyota, H. Tsuji, Y. Gotoh, J. Ishikawa Y. Toyota, H. Tsuji, Y. Gotoh, J. Ishikawa Yield measurement of secondary electrons emitted from silicon dioxide film in negative-ion bombardment Yield measurement of secondary electrons emitted from silicon dioxide film in negative-ion bombardment Yield measurement of secondary electrons emitted from silicon dioxide film in negative-ion bombardment Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 35, 9A, 4785-4788 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 35, 9A, 4785-4788 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 35, 9A, 4785-4788 1996/09 英語 公開
J. Ishikawa, H. Tsuji, K. Kameyama, S. Shimada, Y. Gotoh J. Ishikawa, H. Tsuji, K. Kameyama, S. Shimada, Y. Gotoh J. Ishikawa, H. Tsuji, K. Kameyama, S. Shimada, Y. Gotoh Development of ion irradiation system for in situ observation of ion irradiated semiconductor surfaces by ultra high vacuum scanning tunneling microscope Development of ion irradiation system for in situ observation of ion irradiated semiconductor surfaces by ultra high vacuum scanning tunneling microscope Development of ion irradiation system for in situ observation of ion irradiated semiconductor surfaces by ultra high vacuum scanning tunneling microscope Applied Surface Science, 100, 370-373 Applied Surface Science, 100, 370-373 Applied Surface Science, 100, 370-373 1996/07 英語 公開
Y. Toyota, H. Tsuji, S. Nagumo, Y. Gotoh, J. Ishikawa Y. Toyota, H. Tsuji, S. Nagumo, Y. Gotoh, J. Ishikawa Y. Toyota, H. Tsuji, S. Nagumo, Y. Gotoh, J. Ishikawa Charging phenomenon of insulators in negative-ion implantation Charging phenomenon of insulators in negative-ion implantation Charging phenomenon of insulators in negative-ion implantation Applied Surface Science, 100, 360-364 Applied Surface Science, 100, 360-364 Applied Surface Science, 100, 360-364 1996/07 英語 公開
H. Tsuji, J. Ishikawa, H. Itoh, Y. Toyota, Y. Gotoh H. Tsuji, J. Ishikawa, H. Itoh, Y. Toyota, Y. Gotoh H. Tsuji, J. Ishikawa, H. Itoh, Y. Toyota, Y. Gotoh Fundamental study on powder-scattering in positive- and negative-ion implantation into powder materials Fundamental study on powder-scattering in positive- and negative-ion implantation into powder materials Fundamental study on powder-scattering in positive- and negative-ion implantation into powder materials Applied Surface Science, 100, 342-346 Applied Surface Science, 100, 342-346 Applied Surface Science, 100, 342-346 1996/07 英語 公開
Y. Gotoh, H. Tsuji, J. Ishikawa Y. Gotoh, H. Tsuji, J. Ishikawa Y. Gotoh, H. Tsuji, J. Ishikawa Liquid gold-antimony ion sources Liquid gold-antimony ion sources Liquid gold-antimony ion sources Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 35, 6A, 3670-3676 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 35, 6A, 3670-3676 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 35, 6A, 3670-3676 1996/06 英語 公開
Y. Gotoh, T. Amioka, H. Tsuji, J. Ishikawa Y. Gotoh, T. Amioka, H. Tsuji, J. Ishikawa Y. Gotoh, T. Amioka, H. Tsuji, J. Ishikawa Metal ion beam self-sputter deposition system Metal ion beam self-sputter deposition system Metal ion beam self-sputter deposition system Review of Scientific Instruments, 67, 5, 1996-1999 Review of Scientific Instruments, 67, 5, 1996-1999 Review of Scientific Instruments, 67, 5, 1996-1999 1996/05 英語 公開
Y. Gotoh, M. Nagao, M. Matsubara, K. Inoue, H. Tsuji, J. Ishikawa Y. Gotoh, M. Nagao, M. Matsubara, K. Inoue, H. Tsuji, J. Ishikawa Y. Gotoh, M. Nagao, M. Matsubara, K. Inoue, H. Tsuji, J. Ishikawa Relationship between effective work functions and noise powers of emission currents in nickel-deposited field emitters Relationship between effective work functions and noise powers of emission currents in nickel-deposited field emitters Relationship between effective work functions and noise powers of emission currents in nickel-deposited field emitters Japanese Journal of Applied Physics, Part 2: Letters, 35, 10 PART A, L1297-L1300 Japanese Journal of Applied Physics, Part 2: Letters, 35, 10 PART A, L1297-L1300 Japanese Journal of Applied Physics, Part 2: Letters, 35, 10 PART A, L1297-L1300 1996 英語 公開
M. Nagao, M. Matsubara, K. Inoue, Y. Gotoh, H. Tsuji, J. Ishikawa M. Nagao, M. Matsubara, K. Inoue, Y. Gotoh, H. Tsuji, J. Ishikawa M. Nagao, M. Matsubara, K. Inoue, Y. Gotoh, H. Tsuji, J. Ishikawa Influences of ambient gases on the emission characteristics of nickel-deposited field emitters for vacuum microelectronics Influences of ambient gases on the emission characteristics of nickel-deposited field emitters for vacuum microelectronics Influences of ambient gases on the emission characteristics of nickel-deposited field emitters for vacuum microelectronics Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 35, 10, 5479-5484 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 35, 10, 5479-5484 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 35, 10, 5479-5484 1996 英語 公開
J. Ishikawa, K. Inoue, S. Sadakane, Y. Gotoh, H. Tsuji J. Ishikawa, K. Inoue, S. Sadakane, Y. Gotoh, H. Tsuji J. Ishikawa, K. Inoue, S. Sadakane, Y. Gotoh, H. Tsuji Cone-shaped metal-insulator-semiconductor cathode for vacuum microelectronics Cone-shaped metal-insulator-semiconductor cathode for vacuum microelectronics Cone-shaped metal-insulator-semiconductor cathode for vacuum microelectronics Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 14, 3, 1970-1972 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 14, 3, 1970-1972 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 14, 3, 1970-1972 1996 英語 公開
Kazunori Inoue, Shinji Sadakane, Yasuhito Gotoh, Hiroshi Tsuji, Junzo Ishikawa Kazunori Inoue, Shinji Sadakane, Yasuhito Gotoh, Hiroshi Tsuji, Junzo Ishikawa Kazunori Inoue, Shinji Sadakane, Yasuhito Gotoh, Hiroshi Tsuji, Junzo Ishikawa Self-aligned fabrication of extractor for cone-shaped metal-insulator-semiconductor electron tunneling cathodes Self-aligned fabrication of extractor for cone-shaped metal-insulator-semiconductor electron tunneling cathodes Self-aligned fabrication of extractor for cone-shaped metal-insulator-semiconductor electron tunneling cathodes Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 34, 12B, 6922-6925 Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 34, 12B, 6922-6925 Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 34, 12B, 6922-6925 1995/12 英語 公開
Yoshitaka Toyota, Hiroshi Tsuji, Yasuhito Gotoh, Junzo Ishikawa Yoshitaka Toyota, Hiroshi Tsuji, Yasuhito Gotoh, Junzo Ishikawa Yoshitaka Toyota, Hiroshi Tsuji, Yasuhito Gotoh, Junzo Ishikawa Energy distribution and yield measurement of secondary electrons to evaluate the equilibrium charging voltage of an isolated electrode during negative-ion implantation Energy distribution and yield measurement of secondary electrons to evaluate the equilibrium charging voltage of an isolated electrode during negative-ion implantation Energy distribution and yield measurement of secondary electrons to evaluate the equilibrium charging voltage of an isolated electrode during negative-ion implantation Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 34, 12A, 6487-6491 Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 34, 12A, 6487-6491 Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 34, 12A, 6487-6491 1995/12 英語 公開
Y. Gotoh, T. Ohtake, N. Fujita, K. Inoue, H. Tsuji, J. Ishikawa Y. Gotoh, T. Ohtake, N. Fujita, K. Inoue, H. Tsuji, J. Ishikawa Y. Gotoh, T. Ohtake, N. Fujita, K. Inoue, H. Tsuji, J. Ishikawa Fabrication of lateral-type thin-film edge field emitters by focused ion beam technique Fabrication of lateral-type thin-film edge field emitters by focused ion beam technique Fabrication of lateral-type thin-film edge field emitters by focused ion beam technique Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 13, 2, 465-468 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 13, 2, 465-468 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 13, 2, 465-468 1995/03 英語 公開
J. Ishikawa, T. Ohtake, Y. Gotoh, H. Tsuji, N. Fukayama, K. Inoue, S. Nagamachi, Y. Yamakage, M. Ueda, H. Maruno, M. Asari J. Ishikawa, T. Ohtake, Y. Gotoh, H. Tsuji, N. Fukayama, K. Inoue, S. Nagamachi, Y. Yamakage, M. Ueda, H. Maruno, M. Asari J. Ishikawa, T. Ohtake, Y. Gotoh, H. Tsuji, N. Fukayama, K. Inoue, S. Nagamachi, Y. Yamakage, M. Ueda, H. Maruno, M. Asari Application of the focused ion beam technique to the direct fabrication of vertical-type field emitters Application of the focused ion beam technique to the direct fabrication of vertical-type field emitters Application of the focused ion beam technique to the direct fabrication of vertical-type field emitters Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 13, 2, 452-455 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 13, 2, 452-455 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 13, 2, 452-455 1995/03 英語 公開
S. Sakai, Y. Gotoh, H. Tsuji, Y. Toyota, J. Ishikawa, M. Tanjyo, K. Matsuda S. Sakai, Y. Gotoh, H. Tsuji, Y. Toyota, J. Ishikawa, M. Tanjyo, K. Matsuda S. Sakai, Y. Gotoh, H. Tsuji, Y. Toyota, J. Ishikawa, M. Tanjyo, K. Matsuda The charging mechanism of insulated electrode in negative-ion implantation The charging mechanism of insulated electrode in negative-ion implantation The charging mechanism of insulated electrode in negative-ion implantation Nuclear Inst. and Methods in Physics Research, B, 96, 1-2, 43-47 Nuclear Inst. and Methods in Physics Research, B, 96, 1-2, 43-47 Nuclear Inst. and Methods in Physics Research, B, 96, 1-2, 43-47 1995/03 英語 公開
J. Ishikawa, H. Tsuji, Y. Toyota, Y. Gotoh, K. Matsuda, M. Tanjyo, S. Sakai J. Ishikawa, H. Tsuji, Y. Toyota, Y. Gotoh, K. Matsuda, M. Tanjyo, S. Sakai J. Ishikawa, H. Tsuji, Y. Toyota, Y. Gotoh, K. Matsuda, M. Tanjyo, S. Sakai Negative-ion implantation technique Negative-ion implantation technique Negative-ion implantation technique Nuclear Inst. and Methods in Physics Research, B, 96, 1-2, 7-12 Nuclear Inst. and Methods in Physics Research, B, 96, 1-2, 7-12 Nuclear Inst. and Methods in Physics Research, B, 96, 1-2, 7-12 1995/03 英語 公開
H. Tsuji, J. Ishikawa, Y. Kawabata, Y. Gotoh H. Tsuji, J. Ishikawa, Y. Kawabata, Y. Gotoh H. Tsuji, J. Ishikawa, Y. Kawabata, Y. Gotoh Negative-ion production probability in rf plasma sputter-type heavy negative-ion source Negative-ion production probability in rf plasma sputter-type heavy negative-ion source Negative-ion production probability in rf plasma sputter-type heavy negative-ion source Review of Scientific Instruments, 65, 5, 1732-1736 Review of Scientific Instruments, 65, 5, 1732-1736 Review of Scientific Instruments, 65, 5, 1732-1736 1994/05 英語 公開
Y. Gotoh, K. Yoshida, T. Kawai, N. Fukayama, Y. Ogata, H. Tsuji, J. Ishikawa Y. Gotoh, K. Yoshida, T. Kawai, N. Fukayama, Y. Ogata, H. Tsuji, J. Ishikawa Y. Gotoh, K. Yoshida, T. Kawai, N. Fukayama, Y. Ogata, H. Tsuji, J. Ishikawa Operational characteristics of the impregnated-electrode-type liquid-metal ion source with multiple tip and reservoirs Operational characteristics of the impregnated-electrode-type liquid-metal ion source with multiple tip and reservoirs Operational characteristics of the impregnated-electrode-type liquid-metal ion source with multiple tip and reservoirs Review of Scientific Instruments, 65, 4, 1351-1353 Review of Scientific Instruments, 65, 4, 1351-1353 Review of Scientific Instruments, 65, 4, 1351-1353 1994/04 英語 公開
Yasuhito Gotoh, Kazunori Inoue, Toshiya Ohtake, Hideaki Ueda, Yasuyuki Hishida, Hiroshi Tsuji, Junzo Ishikawa Yasuhito Gotoh, Kazunori Inoue, Toshiya Ohtake, Hideaki Ueda, Yasuyuki Hishida, Hiroshi Tsuji, Junzo Ishikawa Yasuhito Gotoh, Kazunori Inoue, Toshiya Ohtake, Hideaki Ueda, Yasuyuki Hishida, Hiroshi Tsuji, Junzo Ishikawa Application of focused ion beam techniques to the fabrication of lateral-type thin-film edge emitters Application of focused ion beam techniques to the fabrication of lateral-type thin-film edge emitters Application of focused ion beam techniques to the fabrication of lateral-type thin-film edge emitters Japanese Journal of Applied Physics, Part 2: Letters, 33, 1 A, L63-L66 Japanese Journal of Applied Physics, Part 2: Letters, 33, 1 A, L63-L66 Japanese Journal of Applied Physics, Part 2: Letters, 33, 1 A, L63-L66 1994 英語 公開
J. Ishikawa, H. Tsuji, Y. Okada, M. Shinoda, Y. Gotoh J. Ishikawa, H. Tsuji, Y. Okada, M. Shinoda, Y. Gotoh J. Ishikawa, H. Tsuji, Y. Okada, M. Shinoda, Y. Gotoh Radio frequency plasma sputter type heavy negative ion source Radio frequency plasma sputter type heavy negative ion source Radio frequency plasma sputter type heavy negative ion source Vacuum, 44, 3-4, 203-207 Vacuum, 44, 3-4, 203-207 Vacuum, 44, 3-4, 203-207 1993/03 英語 公開
Junzo Ishikawa, Hiroshi Tsuji, Kazunori Inoue, Masayoshi Nagao, Takahiro Sasaki, Takashi Kaneko, Yasuhito Gotoh Junzo Ishikawa, Hiroshi Tsuji, Kazunori Inoue, Masayoshi Nagao, Takahiro Sasaki, Takashi Kaneko, Yasuhito Gotoh Junzo Ishikawa, Hiroshi Tsuji, Kazunori Inoue, Masayoshi Nagao, Takahiro Sasaki, Takashi Kaneko, Yasuhito Gotoh Estimation of metal-deposited field emitters for the micro vacuum tube Estimation of metal-deposited field emitters for the micro vacuum tube Estimation of metal-deposited field emitters for the micro vacuum tube Japanese Journal of Applied Physics, Part 2: Letters, 32, 3 A, L342-L345 Japanese Journal of Applied Physics, Part 2: Letters, 32, 3 A, L342-L345 Japanese Journal of Applied Physics, Part 2: Letters, 32, 3 A, L342-L345 1993 英語 公開
J. Ishikawa, Y. Gotoh, N. Fukayama, Y. Ogata, K. Yoshida, H. Tsuji J. Ishikawa, Y. Gotoh, N. Fukayama, Y. Ogata, K. Yoshida, H. Tsuji J. Ishikawa, Y. Gotoh, N. Fukayama, Y. Ogata, K. Yoshida, H. Tsuji Profiles of ion beams extracted from impregnated-electrode-type liquid-metal ion source with linear array emission points Profiles of ion beams extracted from impregnated-electrode-type liquid-metal ion source with linear array emission points Profiles of ion beams extracted from impregnated-electrode-type liquid-metal ion source with linear array emission points Vacuum, 44, 3-4, 357-360 Vacuum, 44, 3-4, 357-360 Vacuum, 44, 3-4, 357-360 1993 英語 公開
Y. Gotoh, N. Fukayama, H. Tsuji, J. Ishikawa Y. Gotoh, N. Fukayama, H. Tsuji, J. Ishikawa Y. Gotoh, N. Fukayama, H. Tsuji, J. Ishikawa Intensification of an impregnated-electrode-type liquid-metal ion source by multiplying the number of tip-and-reservoirs Intensification of an impregnated-electrode-type liquid-metal ion source by multiplying the number of tip-and-reservoirs Intensification of an impregnated-electrode-type liquid-metal ion source by multiplying the number of tip-and-reservoirs Review of Scientific Instruments, 63, 4, 2438-2440 Review of Scientific Instruments, 63, 4, 2438-2440 Review of Scientific Instruments, 63, 4, 2438-2440 1992 英語 公開
J. Ishikawa, H. Tsuji, Y. Gotoh J. Ishikawa, H. Tsuji, Y. Gotoh J. Ishikawa, H. Tsuji, Y. Gotoh Milliampere metal ion beam formation using multipoint emission by an impregnated-electrode-type liquid-metal ion source Milliampere metal ion beam formation using multipoint emission by an impregnated-electrode-type liquid-metal ion source Milliampere metal ion beam formation using multipoint emission by an impregnated-electrode-type liquid-metal ion source Nuclear Inst. and Methods in Physics Research, B, 55, 1-4, 343-347 Nuclear Inst. and Methods in Physics Research, B, 55, 1-4, 343-347 Nuclear Inst. and Methods in Physics Research, B, 55, 1-4, 343-347 1991 英語 公開
Y. Taga, Y. Gotoh Y. Taga, Y. Gotoh Y. Taga, Y. Gotoh Role of kinetic energy of sputtered particles in thinfilm formation Role of kinetic energy of sputtered particles in thinfilm formation Role of kinetic energy of sputtered particles in thinfilm formation Thin Solid Films, 193-194, PART 1, 164-170 Thin Solid Films, 193-194, PART 1, 164-170 Thin Solid Films, 193-194, PART 1, 164-170 1990 英語 公開
Y. Gotoh, Y. Taga Y. Gotoh, Y. Taga Y. Gotoh, Y. Taga Structures and properties of chromium thin films prepared by anisotropic-emission-effect sputter deposition Structures and properties of chromium thin films prepared by anisotropic-emission-effect sputter deposition Structures and properties of chromium thin films prepared by anisotropic-emission-effect sputter deposition Journal of Applied Physics, 67, 2, 1030-1036 Journal of Applied Physics, 67, 2, 1030-1036 Journal of Applied Physics, 67, 2, 1030-1036 1990 英語 公開
J. Ishikawa, Y. Gotoh, H. Tsuji, T. Takagi J. Ishikawa, Y. Gotoh, H. Tsuji, T. Takagi J. Ishikawa, Y. Gotoh, H. Tsuji, T. Takagi Impregnated-electrode-type liquid metal ion source Impregnated-electrode-type liquid metal ion source Impregnated-electrode-type liquid metal ion source Nuclear Inst. and Methods in Physics Research, B, 21, 1-4, 186-189 Nuclear Inst. and Methods in Physics Research, B, 21, 1-4, 186-189 Nuclear Inst. and Methods in Physics Research, B, 21, 1-4, 186-189 1987 英語 公開
Yasuhito Gotoh, Toshio Kashiwagi, Hiroshi Tsuji, Junzo Ishikawa, Toshinori Takagi Yasuhito Gotoh, Toshio Kashiwagi, Hiroshi Tsuji, Junzo Ishikawa, Toshinori Takagi Yasuhito Gotoh, Toshio Kashiwagi, Hiroshi Tsuji, Junzo Ishikawa, Toshinori Takagi IMPREGNATED-ELECTRODE-TYPE LIQUID METAL ION SOURCE (VI) - CHARACTERISTICS OF Au-Sb ALLOY ION SOURCE. IMPREGNATED-ELECTRODE-TYPE LIQUID METAL ION SOURCE (VI) - CHARACTERISTICS OF Au-Sb ALLOY ION SOURCE. IMPREGNATED-ELECTRODE-TYPE LIQUID METAL ION SOURCE (VI) - CHARACTERISTICS OF Au-Sb ALLOY ION SOURCE. , 19-26 , 19-26 , 19-26 1986 英語 公開

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著者 著者(日本語) 著者(英語) タイトル タイトル(日本語) タイトル(英語) 書誌情報等 書誌情報等(日本語) 書誌情報等(英語) 出版年月 査読の有無 記述言語 掲載種別 公開
H. Tsuji, A. Sakata, G. Miyagawa, Y. Yasutomo, Y. Gotoh H. Tsuji, A. Sakata, G. Miyagawa, Y. Yasutomo, Y. Gotoh H. Tsuji, A. Sakata, G. Miyagawa, Y. Yasutomo, Y. Gotoh Observation of cathodoluminescence of germanium-implanted quartz glass excited by low-energy electrons emitted from silicon field emitter array Observation of cathodoluminescence of germanium-implanted quartz glass excited by low-energy electrons emitted from silicon field emitter array Observation of cathodoluminescence of germanium-implanted quartz glass excited by low-energy electrons emitted from silicon field emitter array Proceedings of the International Display Workshops, 2, 874-877 Proceedings of the International Display Workshops, 2, 874-877 Proceedings of the International Display Workshops, 2, 874-877 2012 英語 公開
Y. Gotoh, H. Tsuji, S. Taguchi, K. Ikeda, T. Kitagawa, J. Ishikawa, S. Sakai Y. Gotoh, H. Tsuji, S. Taguchi, K. Ikeda, T. Kitagawa, J. Ishikawa, S. Sakai Y. Gotoh, H. Tsuji, S. Taguchi, K. Ikeda, T. Kitagawa, J. Ishikawa, S. Sakai Neutralization of space charge on high-current low-energy ion beam by low-energy electrons supplied from silicon based field emitter arrays Neutralization of space charge on high-current low-energy ion beam by low-energy electrons supplied from silicon based field emitter arrays Neutralization of space charge on high-current low-energy ion beam by low-energy electrons supplied from silicon based field emitter arrays AIP Conference Proceedings, 1496, 368-371 AIP Conference Proceedings, 1496, 368-371 AIP Conference Proceedings, 1496, 368-371 2012 英語 公開
T. Daimaru, S. Sakai, Y. Gotoh T. Daimaru, S. Sakai, Y. Gotoh T. Daimaru, S. Sakai, Y. Gotoh Neutralization of space charge in magnetic field by electrons supplied from silicon based field emitter arrays Neutralization of space charge in magnetic field by electrons supplied from silicon based field emitter arrays Neutralization of space charge in magnetic field by electrons supplied from silicon based field emitter arrays AIP Conference Proceedings, 1496, 422-425 AIP Conference Proceedings, 1496, 422-425 AIP Conference Proceedings, 1496, 422-425 2012 英語 公開
Y. Gotoh, S. Taguchi, K. Ikeda, T. Kitagawa, H. Tsuji, J. Ishikawa, S. Sakai Y. Gotoh, S. Taguchi, K. Ikeda, T. Kitagawa, H. Tsuji, J. Ishikawa, S. Sakai Y. Gotoh, S. Taguchi, K. Ikeda, T. Kitagawa, H. Tsuji, J. Ishikawa, S. Sakai Production of extremely low energy electron beam with silicon-based field emitter arrays and its application to space charge neutralization of low-energy and high-current ion beam Production of extremely low energy electron beam with silicon-based field emitter arrays and its application to space charge neutralization of low-energy and high-current ion beam Production of extremely low energy electron beam with silicon-based field emitter arrays and its application to space charge neutralization of low-energy and high-current ion beam Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012, 86-87 Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012, 86-87 Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012, 86-87 2012 英語 公開
Y. Gotoh, K. Ikeda, H. Tsuji Y. Gotoh, K. Ikeda, H. Tsuji Y. Gotoh, K. Ikeda, H. Tsuji Comparison of field emission properties between hafnium nitride and niobium nitride field emitter arrays Comparison of field emission properties between hafnium nitride and niobium nitride field emitter arrays Comparison of field emission properties between hafnium nitride and niobium nitride field emitter arrays Proceedings of the International Display Workshops, 3, 1791-1794 Proceedings of the International Display Workshops, 3, 1791-1794 Proceedings of the International Display Workshops, 3, 1791-1794 2011 英語 公開
池田啓太, 大上航, 後藤康仁, 辻博司 池田啓太, 大上航, 後藤康仁, 辻博司 窒化ハフニウムフィールドエミッタアレイを用いた真空トランジスタの周波数特性 窒化ハフニウムフィールドエミッタアレイを用いた真空トランジスタの周波数特性 電子情報通信学会技術研究報告, 110, 249(ED2010 128-141), 47-50 電子情報通信学会技術研究報告, 110, 249(ED2010 128-141), 47-50 , 110, 249(ED2010 128-141), 47-50 2010/10/18 日本語 公開
Y. Gotoh, M. Kawasaki, H. Tsuji Y. Gotoh, M. Kawasaki, H. Tsuji Y. Gotoh, M. Kawasaki, H. Tsuji Observation of field emission current fluctuation with in situ analyzer of field emission devices Observation of field emission current fluctuation with in situ analyzer of field emission devices Observation of field emission current fluctuation with in situ analyzer of field emission devices IDW\\'10 - Proceedings of the 17th International Display Workshops, 3, 2041-2044 IDW\\'10 - Proceedings of the 17th International Display Workshops, 3, 2041-2044 IDW\\'10 - Proceedings of the 17th International Display Workshops, 3, 2041-2044 2010 英語 公開
W. Ohue, K. Ikeda, K. Endo, Y. Gotoh, H. Tsuji W. Ohue, K. Ikeda, K. Endo, Y. Gotoh, H. Tsuji W. Ohue, K. Ikeda, K. Endo, Y. Gotoh, H. Tsuji Performance of hafnium nitride field emitter array in tough circumstance Performance of hafnium nitride field emitter array in tough circumstance Performance of hafnium nitride field emitter array in tough circumstance IDW\\'10 - Proceedings of the 17th International Display Workshops, 3, 2029-2032 IDW\\'10 - Proceedings of the 17th International Display Workshops, 3, 2029-2032 IDW\\'10 - Proceedings of the 17th International Display Workshops, 3, 2029-2032 2010 英語 公開
D. Nicolaescu, S. Sakai, Y. Gotoh, J. Ishikawa D. Nicolaescu, S. Sakai, Y. Gotoh, J. Ishikawa D. Nicolaescu, S. Sakai, Y. Gotoh, J. Ishikawa Ion beam neutralization using FEAs and mirror magnetic fields Ion beam neutralization using FEAs and mirror magnetic fields Ion beam neutralization using FEAs and mirror magnetic fields AIP Conference Proceedings, 1321, 492-495 AIP Conference Proceedings, 1321, 492-495 AIP Conference Proceedings, 1321, 492-495 2010 英語 公開
D. Nicolaescu, S. Sakai, Y. Gotoh, J. Ishikawa D. Nicolaescu, S. Sakai, Y. Gotoh, J. Ishikawa D. Nicolaescu, S. Sakai, Y. Gotoh, J. Ishikawa Collimator magnet with functionally defined profile for ion implantation Collimator magnet with functionally defined profile for ion implantation Collimator magnet with functionally defined profile for ion implantation AIP Conference Proceedings, 1321, 488-491 AIP Conference Proceedings, 1321, 488-491 AIP Conference Proceedings, 1321, 488-491 2010 英語 公開
J. Ishikawa, Y. Gotoh, M. Takeuchi, S. Taguchi, D. Nicolaescu, H. Tsuji, T. Kimoto, S. Sakai J. Ishikawa, Y. Gotoh, M. Takeuchi, S. Taguchi, D. Nicolaescu, H. Tsuji, T. Kimoto, S. Sakai J. Ishikawa, Y. Gotoh, M. Takeuchi, S. Taguchi, D. Nicolaescu, H. Tsuji, T. Kimoto, S. Sakai Suppression of divergence of low energy ion beams by space charge neutralization with low energy electrons emitted from field emitter arrays Suppression of divergence of low energy ion beams by space charge neutralization with low energy electrons emitted from field emitter arrays Suppression of divergence of low energy ion beams by space charge neutralization with low energy electrons emitted from field emitter arrays AIP Conference Proceedings, 1321, 496-499 AIP Conference Proceedings, 1321, 496-499 AIP Conference Proceedings, 1321, 496-499 2010 英語 公開
S. Taguchi, Y. Gotoh, H. Tsuji, S. Sakai, J. Ishikawa S. Taguchi, Y. Gotoh, H. Tsuji, S. Sakai, J. Ishikawa S. Taguchi, Y. Gotoh, H. Tsuji, S. Sakai, J. Ishikawa Optimization of compact microwave ion source for generation of high current and low energy ion beam Optimization of compact microwave ion source for generation of high current and low energy ion beam Optimization of compact microwave ion source for generation of high current and low energy ion beam AIP Conference Proceedings, 1321, 460-463 AIP Conference Proceedings, 1321, 460-463 AIP Conference Proceedings, 1321, 460-463 2010 英語 公開
P. Sommani, G. Ichihashi, H. Ryuto, H. Tsuji, Y. Gotoh, G.H. Takaoka P. Sommani, G. Ichihashi, H. Ryuto, H. Tsuji, Y. Gotoh, G.H. Takaoka P. Sommani, G. Ichihashi, H. Ryuto, H. Tsuji, Y. Gotoh, G.H. Takaoka Surface modification of silicone rubber for adhesion patterning of mesenchymal stem cells by water cluster ion beam Surface modification of silicone rubber for adhesion patterning of mesenchymal stem cells by water cluster ion beam Surface modification of silicone rubber for adhesion patterning of mesenchymal stem cells by water cluster ion beam AIP Conference Proceedings, 1321, 302-305 AIP Conference Proceedings, 1321, 302-305 AIP Conference Proceedings, 1321, 302-305 2010 英語 公開
K. Ikeda, W. Ohue, K. Endo, Y. Gotoh, H. Tsuji K. Ikeda, W. Ohue, K. Endo, Y. Gotoh, H. Tsuji K. Ikeda, W. Ohue, K. Endo, Y. Gotoh, H. Tsuji 11.1: Development of vacuum transistor using hafnium nitride field emitter array 11.1: Development of vacuum transistor using hafnium nitride field emitter array 11.1: Development of vacuum transistor using hafnium nitride field emitter array 23rd International Vacuum Nanoelectronics Conference, IVNC 2010, 207-208 23rd International Vacuum Nanoelectronics Conference, IVNC 2010, 207-208 23rd International Vacuum Nanoelectronics Conference, IVNC 2010, 207-208 2010 英語 公開
D. Nicolaescu, S. Sakai, Y. Gotoh, J. Ishikawa D. Nicolaescu, S. Sakai, Y. Gotoh, J. Ishikawa D. Nicolaescu, S. Sakai, Y. Gotoh, J. Ishikawa P1-6: Compensation of divergence of space charge dominated ion beams using electron injection and confinement in non-uniform magnetic fields P1-6: Compensation of divergence of space charge dominated ion beams using electron injection and confinement in non-uniform magnetic fields P1-6: Compensation of divergence of space charge dominated ion beams using electron injection and confinement in non-uniform magnetic fields 23rd International Vacuum Nanoelectronics Conference, IVNC 2010, 40-41 23rd International Vacuum Nanoelectronics Conference, IVNC 2010, 40-41 23rd International Vacuum Nanoelectronics Conference, IVNC 2010, 40-41 2010 英語 公開
Y. Gotoh, Y. Sakai, H. Tsuji, J. Ishikawa, S. Sakai Y. Gotoh, Y. Sakai, H. Tsuji, J. Ishikawa, S. Sakai Y. Gotoh, Y. Sakai, H. Tsuji, J. Ishikawa, S. Sakai 10.4: Differences in deceleration performance of electrons emitted from field emitter arrays with different electrode geometries 10.4: Differences in deceleration performance of electrons emitted from field emitter arrays with different electrode geometries 10.4: Differences in deceleration performance of electrons emitted from field emitter arrays with different electrode geometries 23rd International Vacuum Nanoelectronics Conference, IVNC 2010, 203-204 23rd International Vacuum Nanoelectronics Conference, IVNC 2010, 203-204 23rd International Vacuum Nanoelectronics Conference, IVNC 2010, 203-204 2010 英語 公開
後藤 康仁, 池田 啓太, 宮田 雄高, 遠藤 恵介, 辻 博司 後藤 康仁, 池田 啓太, 宮田 雄高, 遠藤 恵介, 辻 博司 窒化ハフニウム電界放出電子源の動作特性(電子管と真空ナノエレクトロニクス及びその評価技術) 窒化ハフニウム電界放出電子源の動作特性(電子管と真空ナノエレクトロニクス及びその評価技術) 電子情報通信学会技術研究報告. ED, 電子デバイス, 109, 230, 17-20 電子情報通信学会技術研究報告. ED, 電子デバイス, 109, 230, 17-20 , 109, 230, 17-20 2009/10/08 日本語 公開
Y. Gotoh Y. Gotoh Y. Gotoh Analysis of field emission characteristics of field stabilized liquid cone Analysis of field emission characteristics of field stabilized liquid cone Analysis of field emission characteristics of field stabilized liquid cone IDW \\'09 - Proceedings of the 16th International Display Workshops, 3, 2015-2018 IDW \\'09 - Proceedings of the 16th International Display Workshops, 3, 2015-2018 IDW \\'09 - Proceedings of the 16th International Display Workshops, 3, 2015-2018 2009 英語 公開
K. Ikeda, Y. Miyata, K. Endo, Y. Gotoh, H. Tsuji, J. Ishikawa K. Ikeda, Y. Miyata, K. Endo, Y. Gotoh, H. Tsuji, J. Ishikawa K. Ikeda, Y. Miyata, K. Endo, Y. Gotoh, H. Tsuji, J. Ishikawa Hafnium nitride field emitter array for field emission amplifier Hafnium nitride field emitter array for field emission amplifier Hafnium nitride field emitter array for field emission amplifier Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009, 81-82 Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009, 81-82 Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009, 81-82 2009 英語 公開
S. Taguchi, M. Takeuchi, Y. Gotoh, H. Tsuji, J. Ishikawa, S. Sakai S. Taguchi, M. Takeuchi, Y. Gotoh, H. Tsuji, J. Ishikawa, S. Sakai S. Taguchi, M. Takeuchi, Y. Gotoh, H. Tsuji, J. Ishikawa, S. Sakai Formation of low energy electron beam with silicon field emitter arrays for space charge compensation in low-energy ion-implantation system Formation of low energy electron beam with silicon field emitter arrays for space charge compensation in low-energy ion-implantation system Formation of low energy electron beam with silicon field emitter arrays for space charge compensation in low-energy ion-implantation system Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009, 201-202 Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009, 201-202 Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009, 201-202 2009 英語 公開
M. Takeuchi, S. Taguchi, Y. Gotoh, H. Tsuji, J. Ishikawa, S. Sakai M. Takeuchi, S. Taguchi, Y. Gotoh, H. Tsuji, J. Ishikawa, S. Sakai M. Takeuchi, S. Taguchi, Y. Gotoh, H. Tsuji, J. Ishikawa, S. Sakai Application of silicon field emitter arrays for space-charge compensation of low energy ion beam Application of silicon field emitter arrays for space-charge compensation of low energy ion beam Application of silicon field emitter arrays for space-charge compensation of low energy ion beam Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009, 93-94 Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009, 93-94 Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009, 93-94 2009 英語 公開
M. Kawasaki, Z. He, Y. Gotoh, H. Tsuji, J. Ishikawa M. Kawasaki, Z. He, Y. Gotoh, H. Tsuji, J. Ishikawa M. Kawasaki, Z. He, Y. Gotoh, H. Tsuji, J. Ishikawa Development of in situ analyzer of field emission devices Development of in situ analyzer of field emission devices Development of in situ analyzer of field emission devices Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009, 123-124 Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009, 123-124 Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009, 123-124 2009 英語 公開
Y. Gotoh, M. Kawasaki, H. Tsuji, J. Ishikawa Y. Gotoh, M. Kawasaki, H. Tsuji, J. Ishikawa Y. Gotoh, M. Kawasaki, H. Tsuji, J. Ishikawa Improvement of in situ analyzer of field emission properties Improvement of in situ analyzer of field emission properties Improvement of in situ analyzer of field emission properties IDW \\'08 - Proceedings of the 15th International Display Workshops, 3, 2073-2076 IDW \\'08 - Proceedings of the 15th International Display Workshops, 3, 2073-2076 IDW \\'08 - Proceedings of the 15th International Display Workshops, 3, 2073-2076 2008 英語 公開
N. Arai, H. Tsuji, K. Kojima, K. Adachi, H. Kotaki, T. Ishibashi, Y. Gotoh, J. Ishikawa N. Arai, H. Tsuji, K. Kojima, K. Adachi, H. Kotaki, T. Ishibashi, Y. Gotoh, J. Ishikawa N. Arai, H. Tsuji, K. Kojima, K. Adachi, H. Kotaki, T. Ishibashi, Y. Gotoh, J. Ishikawa Cathode and photo luminescence of silicon dioxide layer implanted with Ge negative ions at multi-energy Cathode and photo luminescence of silicon dioxide layer implanted with Ge negative ions at multi-energy Cathode and photo luminescence of silicon dioxide layer implanted with Ge negative ions at multi-energy Journal of Physics: Conference Series, 100, 1 Journal of Physics: Conference Series, 100, 1 Journal of Physics: Conference Series, 100, 1 2008 英語 公開
Y. Gotoh, Y. Miyata, N. Setojima, H. Tsuji, J. Ishikawa Y. Gotoh, Y. Miyata, N. Setojima, H. Tsuji, J. Ishikawa Y. Gotoh, Y. Miyata, N. Setojima, H. Tsuji, J. Ishikawa Properties of insulating layer of gated FEAs with transition metal nitride cathode Properties of insulating layer of gated FEAs with transition metal nitride cathode Properties of insulating layer of gated FEAs with transition metal nitride cathode IDW \\'07 - Proceedings of the 14th International Display Workshops, 3, 2213-2216 IDW \\'07 - Proceedings of the 14th International Display Workshops, 3, 2213-2216 IDW \\'07 - Proceedings of the 14th International Display Workshops, 3, 2213-2216 2007 英語 公開
A. Oowada, M. Takeuchi, Y. Sakai, Y. Gotoh, M. Naeao, H. Tsuji, J. Ishikawa, S. Sakai, T. Kimoto A. Oowada, M. Takeuchi, Y. Sakai, Y. Gotoh, M. Naeao, H. Tsuji, J. Ishikawa, S. Sakai, T. Kimoto A. Oowada, M. Takeuchi, Y. Sakai, Y. Gotoh, M. Naeao, H. Tsuji, J. Ishikawa, S. Sakai, T. Kimoto Extension of lifetime of silicon field emitter arrays in oxygen ambient by carbon negative ion implantation Extension of lifetime of silicon field emitter arrays in oxygen ambient by carbon negative ion implantation Extension of lifetime of silicon field emitter arrays in oxygen ambient by carbon negative ion implantation Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07, 225-226 Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07, 225-226 Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07, 225-226 2007 英語 公開
M. Takeuchi, T. Kojima, A. Oowada, Y. Gotoh, M. Nagao, H. Tsuji, J. Ishikawa, S. Sakai, T. Kimoto M. Takeuchi, T. Kojima, A. Oowada, Y. Gotoh, M. Nagao, H. Tsuji, J. Ishikawa, S. Sakai, T. Kimoto M. Takeuchi, T. Kojima, A. Oowada, Y. Gotoh, M. Nagao, H. Tsuji, J. Ishikawa, S. Sakai, T. Kimoto Electron emission properties of silicon field emitter arrays in gaseous ambient for charge compensation device Electron emission properties of silicon field emitter arrays in gaseous ambient for charge compensation device Electron emission properties of silicon field emitter arrays in gaseous ambient for charge compensation device Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07, 145-146 Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07, 145-146 Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07, 145-146 2007 英語 公開
Y. Gotoh, N. Setojima, Y. Miyata, T. Kanzawa, H. Tsuji, J. Ishikawa Y. Gotoh, N. Setojima, Y. Miyata, T. Kanzawa, H. Tsuji, J. Ishikawa Y. Gotoh, N. Setojima, Y. Miyata, T. Kanzawa, H. Tsuji, J. Ishikawa Fabrication and field emission properties of gated field emitter arrays with hafnium nitride cathode Fabrication and field emission properties of gated field emitter arrays with hafnium nitride cathode Fabrication and field emission properties of gated field emitter arrays with hafnium nitride cathode Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07, 141-142 Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07, 141-142 Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07, 141-142 2007 英語 公開
D. Nicolaescu, V. Filip, Y. Gotoh, J. Ishikawa D. Nicolaescu, V. Filip, Y. Gotoh, J. Ishikawa D. Nicolaescu, V. Filip, Y. Gotoh, J. Ishikawa Modeling of linear CNT nanotriodes with improved field uniformity Modeling of linear CNT nanotriodes with improved field uniformity Modeling of linear CNT nanotriodes with improved field uniformity Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07, 151-152 Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07, 151-152 Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07, 151-152 2007 英語 公開
N. Arai, H. Tsuji, N. Gotoh, T. Minotani, T. Ishibashi, K. Adachi, H. Kotaki, Y. Gotoh, J. Ishikawa N. Arai, H. Tsuji, N. Gotoh, T. Minotani, T. Ishibashi, K. Adachi, H. Kotaki, Y. Gotoh, J. Ishikawa N. Arai, H. Tsuji, N. Gotoh, T. Minotani, T. Ishibashi, K. Adachi, H. Kotaki, Y. Gotoh, J. Ishikawa Nanocrystal formation of metals in thermally grown thin silicon dioxide layer by ion implantation and thermal diffusion of implanted atoms in heat treatment Nanocrystal formation of metals in thermally grown thin silicon dioxide layer by ion implantation and thermal diffusion of implanted atoms in heat treatment Nanocrystal formation of metals in thermally grown thin silicon dioxide layer by ion implantation and thermal diffusion of implanted atoms in heat treatment Journal of Physics: Conference Series, 61, 1, 41-45 Journal of Physics: Conference Series, 61, 1, 41-45 Journal of Physics: Conference Series, 61, 1, 41-45 2007 英語 公開
H. Tsuji, N. Arai, N. Gotoh, T. Minotani, K. Kojima, K. Adachi, H. Kotaki, T. Ishibashi, Y. Gotoh, J. Ishikawa H. Tsuji, N. Arai, N. Gotoh, T. Minotani, K. Kojima, K. Adachi, H. Kotaki, T. Ishibashi, Y. Gotoh, J. Ishikawa H. Tsuji, N. Arai, N. Gotoh, T. Minotani, K. Kojima, K. Adachi, H. Kotaki, T. Ishibashi, Y. Gotoh, J. Ishikawa Germanium nanoparticles formed in silicon dioxide layer by multi-energy implantation and oxidation state of Ge atoms Germanium nanoparticles formed in silicon dioxide layer by multi-energy implantation and oxidation state of Ge atoms Germanium nanoparticles formed in silicon dioxide layer by multi-energy implantation and oxidation state of Ge atoms Journal of Physics: Conference Series, 61, 1, 1196-1201 Journal of Physics: Conference Series, 61, 1, 1196-1201 Journal of Physics: Conference Series, 61, 1, 1196-1201 2007 英語 公開
Y. Gotoh, N. Setojima, T. Kanzawa, H. Tsuji, J. Ishikawa Y. Gotoh, N. Setojima, T. Kanzawa, H. Tsuji, J. Ishikawa Y. Gotoh, N. Setojima, T. Kanzawa, H. Tsuji, J. Ishikawa Fabrication of field emission arrays with hafnium nitride cathode Fabrication of field emission arrays with hafnium nitride cathode Fabrication of field emission arrays with hafnium nitride cathode IDW \\'06 - Proceedings of the 13th International Display Workshops, 2, 1557-1560 IDW \\'06 - Proceedings of the 13th International Display Workshops, 2, 1557-1560 IDW \\'06 - Proceedings of the 13th International Display Workshops, 2, 1557-1560 2006 英語 公開
H. Tsuji, N. Arai, N. Gotoh, T. Minotani, T. Ishibashi, T. Okumine, K. Adachi, H. Kotaki, Y. Gotoh, J. Ishikawa H. Tsuji, N. Arai, N. Gotoh, T. Minotani, T. Ishibashi, T. Okumine, K. Adachi, H. Kotaki, Y. Gotoh, J. Ishikawa H. Tsuji, N. Arai, N. Gotoh, T. Minotani, T. Ishibashi, T. Okumine, K. Adachi, H. Kotaki, Y. Gotoh, J. Ishikawa Thermal diffusion barrier for Ag atoms implanted in silicon dioxide layer on silicon substrate and monolayer formation of nanoparticles Thermal diffusion barrier for Ag atoms implanted in silicon dioxide layer on silicon substrate and monolayer formation of nanoparticles Thermal diffusion barrier for Ag atoms implanted in silicon dioxide layer on silicon substrate and monolayer formation of nanoparticles AIP Conference Proceedings, 866, 295-299 AIP Conference Proceedings, 866, 295-299 AIP Conference Proceedings, 866, 295-299 2006 英語 公開
D. Nicolaescu, V. Filip, G.H. Takaoka, Y. Gotoh, J. Ishikawa D. Nicolaescu, V. Filip, G.H. Takaoka, Y. Gotoh, J. Ishikawa D. Nicolaescu, V. Filip, G.H. Takaoka, Y. Gotoh, J. Ishikawa Analytical modeling for the electron emission properties of carbon nanotube arrays Analytical modeling for the electron emission properties of carbon nanotube arrays Analytical modeling for the electron emission properties of carbon nanotube arrays IVNC and IFES 2006 - Technical Digest - l9th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium, 7-8 IVNC and IFES 2006 - Technical Digest - l9th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium, 7-8 IVNC and IFES 2006 - Technical Digest - l9th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium, 7-8 2006 英語 公開
Y. Gotoh, K. Mukai, Y. Kawamura, H. Tsuji, J. Ishikawa Y. Gotoh, K. Mukai, Y. Kawamura, H. Tsuji, J. Ishikawa Y. Gotoh, K. Mukai, Y. Kawamura, H. Tsuji, J. Ishikawa Work function of low index crystal facet of tungsten evaluated by Seppen-Katamuki analysis Work function of low index crystal facet of tungsten evaluated by Seppen-Katamuki analysis Work function of low index crystal facet of tungsten evaluated by Seppen-Katamuki analysis IVNC and IFES 2006 - Technical Digest - l9th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium, 27-28 IVNC and IFES 2006 - Technical Digest - l9th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium, 27-28 IVNC and IFES 2006 - Technical Digest - l9th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium, 27-28 2006 英語 公開
Y. Gotoh, T. Kojima, A. Oowada, M. Nagao, H. Tsuji, J. Ishikawa, S. Sakai Y. Gotoh, T. Kojima, A. Oowada, M. Nagao, H. Tsuji, J. Ishikawa, S. Sakai Y. Gotoh, T. Kojima, A. Oowada, M. Nagao, H. Tsuji, J. Ishikawa, S. Sakai Electron emission properties of plasma treated silicon field emission arrays in gaseous ambient Electron emission properties of plasma treated silicon field emission arrays in gaseous ambient Electron emission properties of plasma treated silicon field emission arrays in gaseous ambient Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV, 2, 865-868 Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV, 2, 865-868 Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV, 2, 865-868 2006 英語 公開
Y. Gotoh, C. Ichihara, A. Kobayashi, T. Hirano, H. Tsuji, J. Ishikawa Y. Gotoh, C. Ichihara, A. Kobayashi, T. Hirano, H. Tsuji, J. Ishikawa Y. Gotoh, C. Ichihara, A. Kobayashi, T. Hirano, H. Tsuji, J. Ishikawa Discharge characteristics of helium under inhomogeneous pressure distribution Discharge characteristics of helium under inhomogeneous pressure distribution Discharge characteristics of helium under inhomogeneous pressure distribution Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV, 2, 670-673 Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV, 2, 670-673 Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV, 2, 670-673 2006 英語 公開
T. Kojima, K. Nakamura, Y. Gotoh, M. Nagao, H. Tsuji, J. Ishikawa, T. Ikejiri, S. Sakai, S. Umisedo, N. Nagai T. Kojima, K. Nakamura, Y. Gotoh, M. Nagao, H. Tsuji, J. Ishikawa, T. Ikejiri, S. Sakai, S. Umisedo, N. Nagai T. Kojima, K. Nakamura, Y. Gotoh, M. Nagao, H. Tsuji, J. Ishikawa, T. Ikejiri, S. Sakai, S. Umisedo, N. Nagai Emission characteristics of silicon field emitter arrays as space charge and wafer charging neutralizer in ion implanter Emission characteristics of silicon field emitter arrays as space charge and wafer charging neutralizer in ion implanter Emission characteristics of silicon field emitter arrays as space charge and wafer charging neutralizer in ion implanter Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference, 2005, 120-121 Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference, 2005, 120-121 Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference, 2005, 120-121 2005 英語 公開
Y. Gotoh, Y. Kawamura, T. Niiya, H. Tsuji, J. Ishikawa, A. Hosono, S. Okuda Y. Gotoh, Y. Kawamura, T. Niiya, H. Tsuji, J. Ishikawa, A. Hosono, S. Okuda Y. Gotoh, Y. Kawamura, T. Niiya, H. Tsuji, J. Ishikawa, A. Hosono, S. Okuda Seppen-Katamuki analysis of field emission properties of carbon nanotubes irradiated by different laser fluences Seppen-Katamuki analysis of field emission properties of carbon nanotubes irradiated by different laser fluences Seppen-Katamuki analysis of field emission properties of carbon nanotubes irradiated by different laser fluences Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005, 2005, 149-150 Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005, 2005, 149-150 Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005, 2005, 149-150 2005 英語 公開
S. Okuda, A. Hosono, T. Shiroishi, K. Nishimura, S. Nakata, M. Takai, J. Ishikawa, Y. Gotoh, S. Uemura, J. Yotani, H. Kurachi, N. Hayashi, M. Okai, T. Sugawara, T. Murakami, Y. Kuroki S. Okuda, A. Hosono, T. Shiroishi, K. Nishimura, S. Nakata, M. Takai, J. Ishikawa, Y. Gotoh, S. Uemura, J. Yotani, H. Kurachi, N. Hayashi, M. Okai, T. Sugawara, T. Murakami, Y. Kuroki S. Okuda, A. Hosono, T. Shiroishi, K. Nishimura, S. Nakata, M. Takai, J. Ishikawa, Y. Gotoh, S. Uemura, J. Yotani, H. Kurachi, N. Hayashi, M. Okai, T. Sugawara, T. Murakami, Y. Kuroki Development of key technologies for carbon nanotube FEDs in Japanese national project Development of key technologies for carbon nanotube FEDs in Japanese national project Development of key technologies for carbon nanotube FEDs in Japanese national project Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005, 2005, 58-59 Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005, 2005, 58-59 Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005, 2005, 58-59 2005 英語 公開
Y. Gotoh, H. Nakahara, T. Kondo, H. Tsuji, J. Ishikawa Y. Gotoh, H. Nakahara, T. Kondo, H. Tsuji, J. Ishikawa Y. Gotoh, H. Nakahara, T. Kondo, H. Tsuji, J. Ishikawa Negative- and positive-temperature dependences of electron emission properties of hydrogen- and oxygen-terminated diamond field emitters Negative- and positive-temperature dependences of electron emission properties of hydrogen- and oxygen-terminated diamond field emitters Negative- and positive-temperature dependences of electron emission properties of hydrogen- and oxygen-terminated diamond field emitters Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC, 297-298 Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC, 297-298 Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC, 297-298 2001 英語 公開
J. Ishikawa, H. Tsuji, S. Kido, K. Kurita, N. Kishimoto, Y. Gotoh J. Ishikawa, H. Tsuji, S. Kido, K. Kurita, N. Kishimoto, Y. Gotoh J. Ishikawa, H. Tsuji, S. Kido, K. Kurita, N. Kishimoto, Y. Gotoh Negative-ion implanter and formation of metal nanoparticles in glass Negative-ion implanter and formation of metal nanoparticles in glass Negative-ion implanter and formation of metal nanoparticles in glass Proceedings of the International Conference on Ion Implantation Technology, 745-748 Proceedings of the International Conference on Ion Implantation Technology, 745-748 Proceedings of the International Conference on Ion Implantation Technology, 745-748 2000 英語 公開
H. Tsuji, H. Sasaki, H. Sato, Y. Gotoh, J. Ishikawa H. Tsuji, H. Sasaki, H. Sato, Y. Gotoh, J. Ishikawa H. Tsuji, H. Sasaki, H. Sato, Y. Gotoh, J. Ishikawa Ion implantation technique using negative ions for artificial neuron network on polystyrene in cell culture Ion implantation technique using negative ions for artificial neuron network on polystyrene in cell culture Ion implantation technique using negative ions for artificial neuron network on polystyrene in cell culture Proceedings of the International Conference on Ion Implantation Technology, 809-812 Proceedings of the International Conference on Ion Implantation Technology, 809-812 Proceedings of the International Conference on Ion Implantation Technology, 809-812 2000 英語 公開
Y. Gotoh, T. Shiigi, M. Nagao, H. Tsuji, J. Ishikawa Y. Gotoh, T. Shiigi, M. Nagao, H. Tsuji, J. Ishikawa Y. Gotoh, T. Shiigi, M. Nagao, H. Tsuji, J. Ishikawa Influence of ambient nitrogen pressure on the property of zirconium nitride thin films in ion beam assisted deposition Influence of ambient nitrogen pressure on the property of zirconium nitride thin films in ion beam assisted deposition Influence of ambient nitrogen pressure on the property of zirconium nitride thin films in ion beam assisted deposition Proceedings of the International Conference on Ion Implantation Technology, 2, 1125-1128 Proceedings of the International Conference on Ion Implantation Technology, 2, 1125-1128 Proceedings of the International Conference on Ion Implantation Technology, 2, 1125-1128 1999 英語 公開
Hiroshi Tsuji, Masakazu Mimura, Shunsuke Kido, Yasuhito Gotoh, Junzo Ishikawa Hiroshi Tsuji, Masakazu Mimura, Shunsuke Kido, Yasuhito Gotoh, Junzo Ishikawa Hiroshi Tsuji, Masakazu Mimura, Shunsuke Kido, Yasuhito Gotoh, Junzo Ishikawa Negative-ion implanter for powders and uniform implantation without particle scattering Negative-ion implanter for powders and uniform implantation without particle scattering Negative-ion implanter for powders and uniform implantation without particle scattering Proceedings of the International Conference on Ion Implantation Technology, 2, 1199-1202 Proceedings of the International Conference on Ion Implantation Technology, 2, 1199-1202 Proceedings of the International Conference on Ion Implantation Technology, 2, 1199-1202 1999 英語 公開
Junzo Ishikawa, Hiroshi Tsuji, Kazuma Shibutani, Hiroshi Ikai, Yasuhito Gotoh Junzo Ishikawa, Hiroshi Tsuji, Kazuma Shibutani, Hiroshi Ikai, Yasuhito Gotoh Junzo Ishikawa, Hiroshi Tsuji, Kazuma Shibutani, Hiroshi Ikai, Yasuhito Gotoh Comparison of silicon etching properties between F<sup>-</sup> negative ion and SF<sub>3</sub><sup>+</sup> positive ion-beam etchings Comparison of silicon etching properties between F<sup>-</sup> negative ion and SF<sub>3</sub><sup>+</sup> positive ion-beam etchings Comparison of silicon etching properties between F<sup>-</sup> negative ion and SF<sub>3</sub><sup>+</sup> positive ion-beam etchings Proceedings of the International Conference on Ion Implantation Technology, 2, 716-719 Proceedings of the International Conference on Ion Implantation Technology, 2, 716-719 Proceedings of the International Conference on Ion Implantation Technology, 2, 716-719 1999 英語 公開
M. Nagao, T. Ura, Y. Gotoh, H. Tsuji, J. Ishikawa M. Nagao, T. Ura, Y. Gotoh, H. Tsuji, J. Ishikawa M. Nagao, T. Ura, Y. Gotoh, H. Tsuji, J. Ishikawa Influence of the composition of NbN<sub>x</sub> thin film field emitter array on the emission characteristics Influence of the composition of NbN<sub>x</sub> thin film field emitter array on the emission characteristics Influence of the composition of NbN<sub>x</sub> thin film field emitter array on the emission characteristics Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC, 306-307 Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC, 306-307 Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC, 306-307 1998 英語 公開
J. Ishikawa, Y. Gotoh, N. Fujita, S. Nishikawa, H. Tsuji J. Ishikawa, Y. Gotoh, N. Fujita, S. Nishikawa, H. Tsuji J. Ishikawa, Y. Gotoh, N. Fujita, S. Nishikawa, H. Tsuji Miniaturized liquid gallium field emission electron sources for vacuum microelectronics Miniaturized liquid gallium field emission electron sources for vacuum microelectronics Miniaturized liquid gallium field emission electron sources for vacuum microelectronics Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC, 34-38 Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC, 34-38 Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC, 34-38 1996 英語 公開
Hiroshi Tsuji, Junzo Ishikawa, Tetsuo Tomita, Yasuhito Gotoh Hiroshi Tsuji, Junzo Ishikawa, Tetsuo Tomita, Yasuhito Gotoh Hiroshi Tsuji, Junzo Ishikawa, Tetsuo Tomita, Yasuhito Gotoh Negative-ion production of reactive elements from compound gases in the RF plasma-sputter-type heavy negative-ion source Negative-ion production of reactive elements from compound gases in the RF plasma-sputter-type heavy negative-ion source Negative-ion production of reactive elements from compound gases in the RF plasma-sputter-type heavy negative-ion source Proceedings of the International Conference on Ion Implantation Technology, 334-337 Proceedings of the International Conference on Ion Implantation Technology, 334-337 Proceedings of the International Conference on Ion Implantation Technology, 334-337 1996 英語 公開
Junzo Ishikawa, Hiroshi Tsuji, Masakazu Mimura, Yasuhito Gotoh Junzo Ishikawa, Hiroshi Tsuji, Masakazu Mimura, Yasuhito Gotoh Junzo Ishikawa, Hiroshi Tsuji, Masakazu Mimura, Yasuhito Gotoh Molecular ion implantation technique for obtaining the same depth profile for the component atoms Molecular ion implantation technique for obtaining the same depth profile for the component atoms Molecular ion implantation technique for obtaining the same depth profile for the component atoms Proceedings of the International Conference on Ion Implantation Technology, 776-779 Proceedings of the International Conference on Ion Implantation Technology, 776-779 Proceedings of the International Conference on Ion Implantation Technology, 776-779 1996 英語 公開
Junzo Ishikawa, Hiroshi Tsuji, Yasuhito Gotoh Junzo Ishikawa, Hiroshi Tsuji, Yasuhito Gotoh Junzo Ishikawa, Hiroshi Tsuji, Yasuhito Gotoh Particle-scattering phenomenon of powders caused by charging voltage of the surface during ion implantation Particle-scattering phenomenon of powders caused by charging voltage of the surface during ion implantation Particle-scattering phenomenon of powders caused by charging voltage of the surface during ion implantation Proceedings of the International Conference on Ion Implantation Technology, 249-252 Proceedings of the International Conference on Ion Implantation Technology, 249-252 Proceedings of the International Conference on Ion Implantation Technology, 249-252 1996 英語 公開

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後藤 康仁 後藤 康仁 図解 薄膜技術(共著) 図解 薄膜技術(共著) 培風館 培風館 1999 日本語 公開
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ニコラエスク, ダン, アドリアン, 後藤 康仁, 酒井 滋樹 ニコラエスク, ダン, アドリアン, 後藤 康仁, 酒井 滋樹 イオンビーム照射装置及びイオンビーム発散抑制方法 イオンビーム照射装置及びイオンビーム発散抑制方法 特許公開 特開2012-124030 2012/06/28 公開
ニコラエスク, ダン, アドリアン, 後藤 康仁, 酒井 滋樹 ニコラエスク, ダン, アドリアン, 後藤 康仁, 酒井 滋樹 イオンビーム照射装置及びイオンビーム発散抑制方法 イオンビーム照射装置及びイオンビーム発散抑制方法 特許登録 特許第5495236号 2014/03/14 公開
ニコラエスク ダン, 酒井 滋樹, 石川 順三, 後藤 康仁 ニコラエスク ダン, 酒井 滋樹, 石川 順三, 後藤 康仁 イオンビーム照射装置及びイオンビーム発散抑制方法 イオンビーム照射装置及びイオンビーム発散抑制方法 特許公開 WO2010-143479 2010/12/16 公開
石川 順三, 辻 博司, 後藤 康仁, 竹内 光明, 酒井 滋樹 石川 順三, 辻 博司, 後藤 康仁, 竹内 光明, 酒井 滋樹 電界放出型電子源の製造方法 電界放出型電子源の製造方法 特許公開 特開2009-016233 2009/01/22 公開
石川順三, ダン・ニコラエスク, 後藤康仁, 酒井滋樹, 新イオン機器株式会 石川順三, ダン・ニコラエスク, 後藤康仁, 酒井滋樹, 新イオン機器株式会 イオンビーム照射装置および半導体デバイスの製造方法 イオンビーム照射装置および半導体デバイスの製造方法 特許登録 特許4514157 2010/05/21 公開
後藤 康仁, 辻 博司, 石川 順三 後藤 康仁, 辻 博司, 石川 順三 イオンビームを用いた炭素系多層薄膜の製造方法 イオンビームを用いた炭素系多層薄膜の製造方法 特許公開 特開2006-037158 2006/02/09 公開
一原 主税, 小林 明, 井上 憲一, 後藤 康仁, 國仲 剛, 辻 博司, 石川 順三 一原 主税, 小林 明, 井上 憲一, 後藤 康仁, 國仲 剛, 辻 博司, 石川 順三 イオン源 イオン源 特許公開 特開2004-281129 2004/10/07 公開
小橋 宏司, 林 和志, 後藤 康仁, 中原 宏勲 小橋 宏司, 林 和志, 後藤 康仁, 中原 宏勲 ダイヤモンド電子源 ダイヤモンド電子源 特許公開 特開2003-031109 2003/01/31 公開
石川 順三, 辻 博司, 後藤 康仁, 酒井 滋樹 石川 順三, 辻 博司, 後藤 康仁, 酒井 滋樹 負イオン注入装置 負イオン注入装置 特許登録 特許第3460242号 2003/08/15 公開
石川 順三, 後藤 康仁, 酒井 滋樹 石川 順三, 後藤 康仁, 酒井 滋樹 負イオン注入装置 負イオン注入装置 特許登録 特許第3460241号 2003/08/15 公開
石川 順三, 後藤 康仁, 酒井 滋樹 石川 順三, 後藤 康仁, 酒井 滋樹 負イオン注入装置 負イオン注入装置 特許登録 特許第2998470号 1999/11/05 公開
大脇 健史, 多賀 康訓, 石山 謙吾, 後藤 康仁 大脇 健史, 多賀 康訓, 石山 謙吾, 後藤 康仁 超疎水性複合材料とその製造方法、および光学機能材料 超疎水性複合材料とその製造方法、および光学機能材料 特許登録 特許第2732129号 1997/12/26 公開
ニコラエスク ダン, 酒井 滋樹, 石川 順三, 後藤 康仁 ニコラエスク ダン, 酒井 滋樹, 石川 順三, 後藤 康仁 イオンビーム照射装置及びイオンビーム発散抑制方法 イオンビーム照射装置及びイオンビーム発散抑制方法 特許登録 特許第5634992号 2014/10/24 公開
後藤康仁, 石川順三, 一原主税, 小林明, 平野貴之 後藤康仁, 石川順三, 一原主税, 小林明, 平野貴之 イオン源,開孔形成方法 イオン源,開孔形成方法 特許登録 特許4560785 2010/08/06 公開

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タイトル言語:
学術賞等
賞の名称(日本語) 賞の名称(英語) 授与組織名(日本語) 授与組織名(英語) 年月
平成4年度電気関係学会関西支部連合大会奨励賞 1992
第13回国際真空マイクロエレクトロニクス会議最優秀口頭発表賞第二位 The Best Oral Presentation Award, Second Prize, 13th International Vacuum Microelectronics Conference 2000
日本真空学会第6回会誌賞 一般社団法人日本真空学会 The Vacuum Society of Japan 2017
日本真空学会第4回フェロー 一般社団法人日本真空学会 The Vacuum Society of Japan 2017
外部資金:競争的資金 (科学研究費補助金)
種別 代表/分担 テーマ(日本語) テーマ(英語) 期間
基盤研究(C) 代表 電界放出素子のその場特性評価装置の開発と素子特性ゆらぎの要因解析 2007/04/01〜2009/03/31
挑戦的萌芽研究 代表 針状試料を用いる必要のない新しい3次元アトムプローブの原理検証 (平成28年度分) 2016/04/01〜2017/03/31
基盤研究(B) 代表 300℃・10MGyの耐熱耐放射線性能を持つ電子・撮像デバイス用微小電子源の開発 (平成28年度分) 2016/04/01〜2017/03/31
挑戦的萌芽研究 代表 針状試料を用いる必要のない新しい3次元アトムプローブの原理検証 (平成29年度分) 2017/04/01〜2018/03/31
基盤研究(B) 代表 300℃・10MGyの耐熱耐放射線性能を持つ電子・撮像デバイス用微小電子源の開発 (平成29年度分) 2017/04/01〜2018/03/31
基盤研究(B) 代表 300℃・10MGyの耐熱耐放射線性能を持つ電子・撮像デバイス用微小電子源の開発 (平成30年度分) 2018/04/01〜2019/03/31
担当科目
講義名(日本語) 講義名(英語) 開講期 学部/研究科 年度
電子装置特論 後期 工学研究科 2011/04〜2012/03
真空電子工学1 前期 工学部 2011/04〜2012/03
真空電子工学2 前期 工学部 2011/04〜2012/03
電気回路と微分方程式 前期 工学部 2011/04〜2012/03
電気回路と微分方程式 Electrical Circuit and Differential Equation 前期 全学共通科目 2011/04〜2012/03
電気電子工学実習A 前期 工学部 2011/04〜2012/03
電気電子工学実習B 後期 工学部 2011/04〜2012/03
電気電子工学実験A 前期 工学部 2011/04〜2012/03
電気電子工学実験B 後期 工学部 2011/04〜2012/03
真空電子工学1 Vacuum Electronic Engineering 1 前期 工学部 2012/04〜2013/03
真空電子工学2 Vacuum Electronic Engineering 2 前期 工学部 2012/04〜2013/03
電子装置特論 Charged Particle Beam Apparatus 後期 工学研究科 2012/04〜2013/03
電気回路と微分方程式 Electrical Circuit and Differential Equation 前期 全学共通科目 2012/04〜2013/03
電気回路と微分方程式 Electric Circuits and Differential Equations 前期 工学部 2012/04〜2013/03
真空電子工学1 Vacuum Electronic Engineering 1 前期 工学部 2013/04〜2014/03
真空電子工学2 Vacuum Electronic Engineering 2 前期 工学部 2013/04〜2014/03
電気回路と微分方程式 Electric Circuits and Differential Equations 前期 工学部 2013/04〜2014/03
電子装置特論 Charged Particle Beam Apparatus 後期 工学研究科 2013/04〜2014/03
電気回路と微分方程式 Electrical Circuit and Differential Equation 前期 全学共通科目 2013/04〜2014/03
真空電子工学1 Vacuum Electronic Engineering 1 前期 工学部 2014/04〜2015/03
真空電子工学2 Vacuum Electronic Engineering 2 前期 工学部 2014/04〜2015/03
電気回路と微分方程式 Electric Circuits and Differential Equations 前期 工学部 2014/04〜2015/03
電子装置特論 Charged Particle Beam Apparatus 後期 工学研究科 2014/04〜2015/03
電気回路と微分方程式 Electrical Circuit and Differential Equation 前期 全学共通科目 2014/04〜2015/03
真空電子工学1 Vacuum Electronic Engineering 1 前期 工学部 2015/04〜2016/03
真空電子工学2 Vacuum Electronic Engineering 2 前期 工学部 2015/04〜2016/03
電子装置特論 Charged Particle Beam Apparatus 後期 工学研究科 2015/04〜2016/03
先端科学通論 Advanced Science 後期 総合生存学館 2016/04〜2017/03
真空電子工学1 Vacuum Electronic Engineering 1 前期 工学部 2016/04〜2017/03
電子物性工学 Solid State Physics and Engineering 前期 工学部 2016/04〜2017/03
電子装置特論 Charged Particle Beam Apparatus 後期 工学研究科 2016/04〜2017/03
先端科学通論 Advanced Science 後期 総合生存学館 2017/04〜2018/03
真空電子工学1 Vacuum Electronic Engineering 1 前期 工学部 2017/04〜2018/03
電子物性工学 Solid State Physics and Engineering 前期 工学部 2017/04〜2018/03
電子装置特論 Charged Particle Beam Apparatus 後期 工学研究科 2017/04〜2018/03
電気電子工学実習 Advanced Practice of Electrical and Electronic Engineering 後期 工学部 2017/04〜2018/03
真空電子工学1 Vacuum Electronic Engineering 1 前期 工学部 2018/04〜2019/03
電子物性工学 Solid State Physics and Engineering 前期 工学部 2018/04〜2019/03
電子装置特論 Charged Particle Beam Apparatus 後期 工学研究科 2018/04〜2019/03
電気電子工学実習 Advanced Practice of Electrical and Electronic Engineering 後期 工学部 2018/04〜2019/03
真空電子工学 Vacuum Electronic Engineering 前期 工学部 2019/04〜2020/03
電子物性工学 Solid State Physics and Engineering 前期 工学部 2019/04〜2020/03
電子装置特論 Charged Particle Beam Apparatus 後期 工学研究科 2019/04〜2020/03
電気電子工学実習 Advanced Practice of Electrical and Electronic Engineering 後期 工学部 2019/04〜2020/03

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