江利口 浩二

最終更新日時: 2019/06/07 15:16:51

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氏名(漢字/フリガナ/アルファベット表記)
江利口 浩二/エリグチ コウジ/Eriguchi, Koji
所属部署・職名(部局/所属/講座等/職名)
工学研究科/航空宇宙工学専攻航空宇宙基礎工学講座/教授
学部兼担
部局 所属 講座等 職名
工学部
連絡先住所
種別 住所(日本語) 住所(英語)
職場 京都市西京区京都大学桂 Kyoto daigaku-Katsura, Nishikyo-ku, Kyoto
連絡先電話番号
種別 番号
職場 075-383-3786
所属学会(国内)
学会名(日本語) 学会名(英語)
応用物理学会 The Japan Society of Applied Physics (JSAP)
日本真空協会 The Vacuum Society of Japan (VSJ)
日本航空宇宙学会 The Japan Society for Aeronautical and Space Sciences
所属学会(海外)
学会名(英語) 国名
IEEE The Institute of Electrical and Electronics Engineers, Inc. USA
American Vacuum Society USA
取得学位
学位名(日本語) 学位名(英語) 大学(日本語) 大学(英語) 取得区分
修士(工学) 京都大学
博士(工学) 京都大学
出身大学院・研究科等
大学名(日本語) 大学名(英語) 研究科名(日本語) 研究科名(英語) 専攻名(日本語) 専攻名(英語) 修了区分
京都大学 大学院工学研究科修士課程物理工学専攻 修了
出身学校・専攻等
大学名(日本語) 大学名(英語) 学部名(日本語) 学部名(英語) 学科名(日本語) 学科名(英語) 卒業区分
京都大学 工学部物理工学科 卒業
職歴
期間 組織名(日本語) 組織名(英語) 職名(日本語) 職名(英語)
1991/04/01〜2005/07/15 松下電器産業株式会社(現パナソニック株式会社) Panasonic
2005/07/16〜2016/06/31 京都大学 Kyoto University 准教授
2016/07/01〜 京都大学 Kyoto University 教授
ORCID ID
https://orcid.org/0000-0003-1485-5897
researchmap URL
https://researchmap.jp/7000008458
研究テーマ
(日本語)
プラズマ応用工学,信頼性物理学,ナノプロセス科学
(英語)
Plasma Science and Technology, Reliability Physics and Statistics Engineering, Advanced Process Engineering
研究概要
(日本語)
1.超微細領域でのプラズマ・固体表面界面反応制御を目指した研究: 原子レベルでプラズマ-固体表面反応を理解することで,超微細領域で制御された新しいプラズマプロセス,プロセス最適化設計の実現. (例:イオンエネルギー・フラックス最適化,3次元デバイス構造での反応制御,統計的ばらつき・ゆらぎ最適制御設計,分子動力学・量子化学計算科学など) 2.プラズマを用いた新機能材料設計・デバイス創製とその信頼性物理に関する研究: 宇宙空間のような極環境下において高性能・高信頼性を達成する新しい材料・デバイス設計の実現. (例:宇宙用途を鑑みた耐プラズマ性・超硬度特性をもつ薄膜BN構造材料設計,耐放射線性をもつ抵抗変化型メモリデバイスの高信頼性設計など) 3.新機能デバイス設計のための新しい電気的・光学的物性解析手法の研究: 高信頼性材料設計を可能にする,誘電関数・量子トンネル過程に着目した新しい解析・設計手法の実現. (例:ナノ領域での新変調反射率分光・キャリア捕獲準位密度定量化など)
研究分野(キーワード)
キーワード(日本語) キーワード(英語)
プラズマ、固体物性、電子デバイス、光物性、信頼性物理 Plasma, electronics, optics, reliability physics
論文
著者 著者(日本語) 著者(英語) タイトル タイトル(日本語) タイトル(英語) 書誌情報等 書誌情報等(日本語) 書誌情報等(英語) 出版年月 査読の有無 記述言語 掲載種別 公開
Y. Sato, S. Shibata, A. Uedono, K. Urabe, and K. Eriguchi Y. Sato, S. Shibata, A. Uedono, K. Urabe, and K. Eriguchi Y. Sato, S. Shibata, A. Uedono, K. Urabe, and K. Eriguchi Characterization of the distribution of defects introduced by plasma exposure in Si substrate Characterization of the distribution of defects introduced by plasma exposure in Si substrate Characterization of the distribution of defects introduced by plasma exposure in Si substrate J. Vac. Sci. Technol. A, 37, 1, 011304-01-011304-10 J. Vac. Sci. Technol. A, 37, 1, 011304-01-011304-10 J. Vac. Sci. Technol., 37, 1, 011304-01-011304-10 2019/01 英語 研究論文(学術雑誌) 公開
T. Kuyama and K. Eriguchi T. Kuyama and K. Eriguchi T. Kuyama and K. Eriguchi Optical and electrical characterization methods of plasma-induced damage in silicon nitride films Optical and electrical characterization methods of plasma-induced damage in silicon nitride films Optical and electrical characterization methods of plasma-induced damage in silicon nitride films Jpn. J. Appl. Phys., 57, 06JD03 Jpn. J. Appl. Phys., 57, 06JD03 Jpn. J. Appl. Phys., 57, 06JD03 2018/05 英語 研究論文(学術雑誌) 公開
Y. Yoshikawa and K. Eriguchi Y. Yoshikawa and K. Eriguchi Y. Yoshikawa and K. Eriguchi First-principles predictions of electronic structure change in plasma-damaged materials First-principles predictions of electronic structure change in plasma-damaged materials First-principles predictions of electronic structure change in plasma-damaged materials Jpn. J. Appl. Phys., 57, 06JD04 Jpn. J. Appl. Phys., 57, 06JD04 Jpn. J. Appl. Phys., 57, 06JD04 2018/05 英語 研究論文(学術雑誌) 公開
T. Hamano and K. Eriguchi T. Hamano and K. Eriguchi T. Hamano and K. Eriguchi Incident ion dose evolution of damaged layer thickness in Si substrate exposed to Ar and He plasmas Incident ion dose evolution of damaged layer thickness in Si substrate exposed to Ar and He plasmas Incident ion dose evolution of damaged layer thickness in Si substrate exposed to Ar and He plasmas Jpn. J. Appl. Phys., 57, 06JD02 Jpn. J. Appl. Phys., 57, 06JD02 Jpn. J. Appl. Phys., 57, 06JD02 2018/05 英語 研究論文(学術雑誌) 公開
N. Nakazaki, H. Matsumoto, S. Sonobe, T. Hatsuse, H. Tsuda, Y. Takao, K. Eriguchi, and K. Ono N. Nakazaki, H. Matsumoto, S. Sonobe, T. Hatsuse, H. Tsuda, Y. Takao, K. Eriguchi, and K. Ono N. Nakazaki, H. Matsumoto, S. Sonobe, T. Hatsuse, H. Tsuda, Y. Takao, K. Eriguchi, and K. Ono Ripple formation on Si surfaces during plasma etching in Cl2 Ripple formation on Si surfaces during plasma etching in Cl2 Ripple formation on Si surfaces during plasma etching in Cl2 AIP Adv., 8, 055027 AIP Adv., 8, 055027 AIP Adv., 8, 055027 2018/04 英語 研究論文(学術雑誌) 公開
Koji Eriguchi Koji Eriguchi Koji Eriguchi Modeling of defect generation during plasma etching and its impact on electronic device performance—plasma-induced damage Modeling of defect generation during plasma etching and its impact on electronic device performance—plasma-induced damage Modeling of defect generation during plasma etching and its impact on electronic device performance—plasma-induced damage J. Phys. D, 50, 333001 J. Phys. D, 50, 333001 J. Phys. D, 50, 333001 2017/03 英語 研究論文(学術雑誌) 公開
K. Ono, N. Nakazaki, H. Tsuda, Y. Takao, and K. Eriguchi K. Ono, N. Nakazaki, H. Tsuda, Y. Takao, and K. Eriguchi K. Ono, N. Nakazaki, H. Tsuda, Y. Takao, and K. Eriguchi Surface morphology evolution during plasma etching of silicon: roughening, smoothing and ripple formation Surface morphology evolution during plasma etching of silicon: roughening, smoothing and ripple formation Surface morphology evolution during plasma etching of silicon: roughening, smoothing and ripple formation J. Phys. D, 50, 414001 J. Phys. D, 50, 414001 J. Phys. D, 50, 414001 2017/03 英語 研究論文(学術雑誌) 公開
Z. Wei and K. Eriguchi Z. Wei and K. Eriguchi Z. Wei and K. Eriguchi Analytic Modeling for Nanoscale Resistive Filament Variation in ReRAM With Stochastic Differential Equation Analytic Modeling for Nanoscale Resistive Filament Variation in ReRAM With Stochastic Differential Equation Analytic Modeling for Nanoscale Resistive Filament Variation in ReRAM With Stochastic Differential Equation Transactions on Electron Devices, 64, 5, 2201-2206 Transactions on Electron Devices, 64, 5, 2201-2206 Transactions on Electron Devices, 64, 5, 2201-2206 2017 英語 研究論文(学術雑誌) 公開
Kentaro Nishida, Kouichi Ono and Koji Eriguchi Kentaro Nishida, Kouichi Ono and Koji Eriguchi Kentaro Nishida, Kouichi Ono and Koji Eriguchi Optical model for spectroscopic ellipsometry analysis of plasma-induced damage to SiOC films Optical model for spectroscopic ellipsometry analysis of plasma-induced damage to SiOC films Optical model for spectroscopic ellipsometry analysis of plasma-induced damage to SiOC films Japanese Journal of Applied Physics, 56, 6S2, 06HD01 Japanese Journal of Applied Physics, 56, 6S2, 06HD01 Japanese Journal of Applied Physics, 56, 6S2, 06HD01 2017 英語 研究論文(学術雑誌) 公開
Kengo Shinohara, Kentaro Nishida, Kouichi Ono and Koji Eriguchi Kengo Shinohara, Kentaro Nishida, Kouichi Ono and Koji Eriguchi Kengo Shinohara, Kentaro Nishida, Kouichi Ono and Koji Eriguchi Time-dependent dielectric breakdown characterizations of interlayer dielectric damage induced during plasma processing Time-dependent dielectric breakdown characterizations of interlayer dielectric damage induced during plasma processing Time-dependent dielectric breakdown characterizations of interlayer dielectric damage induced during plasma processing Japanese Journal of Applied Physics, 56, 6S2, 06HD03 Japanese Journal of Applied Physics, 56, 6S2, 06HD03 Japanese Journal of Applied Physics, 56, 6S2, 06HD03 2017 英語 研究論文(学術雑誌) 公開
Koji Eriguchi Koji Eriguchi Koji Eriguchi Defect generation in electronic devices under plasma exposure: Plasma-induced damage Defect generation in electronic devices under plasma exposure: Plasma-induced damage Defect generation in electronic devices under plasma exposure: Plasma-induced damage Jpn. J. Appl. Phys., 56, 6S2, 06HA01 Jpn. J. Appl. Phys., 56, 6S2, 06HA01 Jpn. J. Appl. Phys., 56, 6S2, 06HA01 2017 英語 研究論文(学術雑誌) 公開
Yukimasa Okada, Kouichi Ono and Koji Eriguchi Yukimasa Okada, Kouichi Ono and Koji Eriguchi Yukimasa Okada, Kouichi Ono and Koji Eriguchi An evaluation method of the profile of plasma-induced defects based on capacitance–voltage measurement An evaluation method of the profile of plasma-induced defects based on capacitance–voltage measurement An evaluation method of the profile of plasma-induced defects based on capacitance–voltage measurement Jpn. J. Appl. Phys., 56, 6S2, 06HD04 Jpn. J. Appl. Phys., 56, 6S2, 06HD04 Jpn. J. Appl. Phys., 56, 6S2, 06HD04 2017 英語 研究論文(学術雑誌) 公開
Koji Eriguchi and Yukimasa Okada Koji Eriguchi and Yukimasa Okada Koji Eriguchi and Yukimasa Okada Electrical characterization of carrier trapping behavior of defects created by plasma exposures Electrical characterization of carrier trapping behavior of defects created by plasma exposures Electrical characterization of carrier trapping behavior of defects created by plasma exposures Journal of Physics D: Applied Physics, 50, 26, 26LT01 Journal of Physics D: Applied Physics, 50, 26, 26LT01 Journal of Physics D: Applied Physics, 50, 26, 26LT01 2017 英語 研究論文(学術雑誌) 公開
Kentaro Nishida, Yukimasa Okada, Yoshinori Takao, Koji Eriguchi and Kouichi Ono Kentaro Nishida, Yukimasa Okada, Yoshinori Takao, Koji Eriguchi and Kouichi Ono Kentaro Nishida, Yukimasa Okada, Yoshinori Takao, Koji Eriguchi and Kouichi Ono Evaluation technique for plasma-induced SiOC dielectric damage by capacitance–voltage hysteresis monitoring Evaluation technique for plasma-induced SiOC dielectric damage by capacitance–voltage hysteresis monitoring Evaluation technique for plasma-induced SiOC dielectric damage by capacitance–voltage hysteresis monitoring Jpn. J. Appl. Phys., 55, 6S2, 06HB04 Jpn. J. Appl. Phys., 55, 6S2, 06HB04 Jpn. J. Appl. Phys., 55, 6S2, 06HB04 2016/05 英語 研究論文(学術雑誌) 公開
Nobuya Nakazaki, Haruka Matsumoto, Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono Nobuya Nakazaki, Haruka Matsumoto, Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono Nobuya Nakazaki, Haruka Matsumoto, Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono Surface smoothing during plasma etching of Si in Cl2 Surface smoothing during plasma etching of Si in Cl2 Surface smoothing during plasma etching of Si in Cl2 Appl. Phys. Lett., 109, 204101 Appl. Phys. Lett., 109, 204101 Appl. Phys. Lett., 109, 204101 2016 英語 研究論文(学術雑誌) 公開
N. Nakazaki, Y. Takao, K. Eriguchi, K. Ono N. Nakazaki, Y. Takao, K. Eriguchi, K. Ono N. Nakazaki, Y. Takao, K. Eriguchi, K. Ono Molecular dynamics simulations of Si etching in Cl- and Br-based plasmas: Cl+ and Br+ ion incidence in the presence of Cl and Br neutrals Molecular dynamics simulations of Si etching in Cl- and Br-based plasmas: Cl+ and Br+ ion incidence in the presence of Cl and Br neutrals Molecular dynamics simulations of Si etching in Cl- and Br-based plasmas: Cl+ and Br+ ion incidence in the presence of Cl and Br neutrals J. Appl. Phys., 118, 233304 J. Appl. Phys., 118, 233304 J. Appl. Phys., 118, 233304 2015/12 英語 研究論文(学術雑誌) 公開
Koji Eriguchi, Kouichi Ono Koji Eriguchi, Kouichi Ono Koji Eriguchi, Kouichi Ono Impacts of plasma process-induced damage on MOSFET parameter variability and reliability Impacts of plasma process-induced damage on MOSFET parameter variability and reliability Impacts of plasma process-induced damage on MOSFET parameter variability and reliability Microelectronics Reliability, 50, 9-10, 1464-1470 Microelectronics Reliability, 50, 9-10, 1464-1470 Microelectronics Reliability, 50, 9-10, 1464-1470 2015/09 英語 研究論文(学術雑誌) 公開
I. Yamada, Y. Hirano, K. Nishimura, Y. Takao, K. Eriguchi, K. Ono I. Yamada, Y. Hirano, K. Nishimura, Y. Takao, K. Eriguchi, K. Ono I. Yamada, Y. Hirano, K. Nishimura, Y. Takao, K. Eriguchi, K. Ono Silicon nanowire growth on Si and SiO2 substrates by rf magnetron sputtering in Ar/H2 Silicon nanowire growth on Si and SiO2 substrates by rf magnetron sputtering in Ar/H2 Silicon nanowire growth on Si and SiO2 substrates by rf magnetron sputtering in Ar/H2 Applied Physics Express, 8, 066201 Applied Physics Express, 8, 066201 Applied Physics Express, 8, 066201 2015 英語 研究論文(学術雑誌) 公開
Y. Nakakubo, K. Eriguchi, K. Ono Y. Nakakubo, K. Eriguchi, K. Ono Y. Nakakubo, K. Eriguchi, K. Ono Characterization of plasma process-induced latent defects in surface and interface layer of Si substrate Characterization of plasma process-induced latent defects in surface and interface layer of Si substrate Characterization of plasma process-induced latent defects in surface and interface layer of Si substrate ECS Journal of Solid State Science and Technology, 4, 6, N5077-N5083 ECS Journal of Solid State Science and Technology, 4, 6, N5077-N5083 ECS Journal of Solid State Science and Technology, 4, 6, N5077-N5083 2015 英語 公開
T. Iwai, K. Eriguchi, S. Yamauchi, N. Noro, J. Kitagawa, K. Ono T. Iwai, K. Eriguchi, S. Yamauchi, N. Noro, J. Kitagawa, K. Ono T. Iwai, K. Eriguchi, S. Yamauchi, N. Noro, J. Kitagawa, K. Ono Influence of microwave annealing on optical and electrical properties of plasma-induced defect structures in Si substrate Influence of microwave annealing on optical and electrical properties of plasma-induced defect structures in Si substrate Influence of microwave annealing on optical and electrical properties of plasma-induced defect structures in Si substrate J. Vac. Sci. Technol. A, 33, 061403 J. Vac. Sci. Technol. A, 33, 061403 J. Vac. Sci. Technol. A, 33, 061403 2015 英語 公開
K. Eriguchi; A. Matsuda; Y. Takao; K. Ono K. Eriguchi; A. Matsuda; Y. Takao; K. Ono K. Eriguchi; A. Matsuda; Y. Takao; K. Ono Effects of straggling of incident ions on plasma-induced damage creation in "fin"-type field-effect transistors Effects of straggling of incident ions on plasma-induced damage creation in "fin"-type field-effect transistors Effects of straggling of incident ions on plasma-induced damage creation in "fin"-type field-effect transistors Jpn. J. Appl. Phys., 53, 03DE02 Jpn. J. Appl. Phys., 53, 03DE02 Jpn. J. Appl. Phys., 53, 03DE02 2014 英語 公開
M. Noma; K. Eriguchi; Y. Takao; N. Terayama; K. Ono M. Noma; K. Eriguchi; Y. Takao; N. Terayama; K. Ono M. Noma; K. Eriguchi; Y. Takao; N. Terayama; K. Ono Improved hardness and electrical property of c-BN thin films by magnetically enhanced plasma ion plating technique Improved hardness and electrical property of c-BN thin films by magnetically enhanced plasma ion plating technique Improved hardness and electrical property of c-BN thin films by magnetically enhanced plasma ion plating technique Jpn. J. Appl. Phys., 53, 03DB02 Jpn. J. Appl. Phys., 53, 03DB02 Jpn. J. Appl. Phys., 53, 03DB02 2014 英語 公開
T. Okumura; K. Eriguchi; M. Saitoh; H. Kawaura T. Okumura; K. Eriguchi; M. Saitoh; H. Kawaura T. Okumura; K. Eriguchi; M. Saitoh; H. Kawaura Annealing performance improvement of elongated inductively coupled plasma torch and its application to recovery of plasma-induced Si substrate damage Annealing performance improvement of elongated inductively coupled plasma torch and its application to recovery of plasma-induced Si substrate damage Annealing performance improvement of elongated inductively coupled plasma torch and its application to recovery of plasma-induced Si substrate damage Jpn. J. Appl. Phys., 53, 03DG01 Jpn. J. Appl. Phys., 53, 03DG01 Jpn. J. Appl. Phys., 53, 03DG01 2014 英語 公開
A. Matsuda; Y. Nakakubo; Y. Takao; K. Eriguchi; K. Ono A. Matsuda; Y. Nakakubo; Y. Takao; K. Eriguchi; K. Ono A. Matsuda; Y. Nakakubo; Y. Takao; K. Eriguchi; K. Ono Micro-Photoreflectance Spectroscopy for Microscale Monitoring of Plasma-induced Physical Damage on Si Substrate Micro-Photoreflectance Spectroscopy for Microscale Monitoring of Plasma-induced Physical Damage on Si Substrate Micro-Photoreflectance Spectroscopy for Microscale Monitoring of Plasma-induced Physical Damage on Si Substrate Jpn. J. Appl. Phys., 53, 03DF01 Jpn. J. Appl. Phys., 53, 03DF01 Jpn. J. Appl. Phys., 53, 03DF01 2014 英語 公開
M. Kamei; Y. Takao; K. Eriguchi; K. Ono M. Kamei; Y. Takao; K. Eriguchi; K. Ono M. Kamei; Y. Takao; K. Eriguchi; K. Ono Effects of plasma-induced charging damage on random telegraph noise in metal–oxide–semiconductor field-effect transistors with SiO2 and high-k gate dielectrics Effects of plasma-induced charging damage on random telegraph noise in metal–oxide–semiconductor field-effect transistors with SiO2 and high-k gate dielectrics Effects of plasma-induced charging damage on random telegraph noise in metal–oxide–semiconductor field-effect transistors with SiO2 and high-k gate dielectrics Jpn. J. Appl. Phys., 53, 03DF02 Jpn. J. Appl. Phys., 53, 03DF02 Jpn. J. Appl. Phys., 53, 03DF02 2014 英語 公開
N. Nakazaki; K. Eriguchi; K. Ono N. Nakazaki; K. Eriguchi; K. Ono N. Nakazaki; K. Eriguchi; K. Ono Molecular dynamics simulations of silicon chloride ion incidence during Si etching in Cl-based plasmas Molecular dynamics simulations of silicon chloride ion incidence during Si etching in Cl-based plasmas Molecular dynamics simulations of silicon chloride ion incidence during Si etching in Cl-based plasmas Jpn. J. Appl. Phys., 53, 056201 Jpn. J. Appl. Phys., 53, 056201 Jpn. J. Appl. Phys., 53, 056201 2014 英語 公開
H. Tsuda; N. Nakazaki; Y. Takao; K. Eriguchi; K. Ono H. Tsuda; N. Nakazaki; Y. Takao; K. Eriguchi; K. Ono H. Tsuda; N. Nakazaki; Y. Takao; K. Eriguchi; K. Ono Surface roughening and rippling during plasma etching of silicon: Numerical investigations and a comparison with experiments Surface roughening and rippling during plasma etching of silicon: Numerical investigations and a comparison with experiments Surface roughening and rippling during plasma etching of silicon: Numerical investigations and a comparison with experiments J. Vac. Sci. Technol., B32, 031212 J. Vac. Sci. Technol., B32, 031212 J. Vac. Sci. Technol., B32, 031212 2014 英語 公開
N. Nakazaki, H. Tsuda, Y. Takao, K. Eriguchi, and K. Ono N. Nakazaki, H. Tsuda, Y. Takao, K. Eriguchi, and K. Ono Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products J. Appl. Phys., 116, 223302 J. Appl. Phys., 116, 223302 J. Appl. Phys., 116, 223302 2014 英語 公開
Y. Takao, H. Koizumi, K. Komurasaki, K. Eriguchi, K. Ono Y. Takao, H. Koizumi, K. Komurasaki, K. Eriguchi, K. Ono Y. Takao, H. Koizumi, K. Komurasaki, K. Eriguchi, K. Ono Three-dimensional particle-in-cell simulation of a miniature plasma source for a microwave discharge ion thruster Three-dimensional particle-in-cell simulation of a miniature plasma source for a microwave discharge ion thruster Three-dimensional particle-in-cell simulation of a miniature plasma source for a microwave discharge ion thruster Plasma Sources Sci. Technol., 23, 064004 Plasma Sources Sci. Technol., 23, 064004 Plasma Sources Sci. Technol., 23, 064004 2014 英語 公開
江利口 浩二 江利口 浩二 M. Kamei, K. Eriguchi, and K. Ono TDDB lifetime enhancement of high-k MOSFETs damaged by plasma processing—Conflicting results in plasma charging damage evaluation— TDDB lifetime enhancement of high-k MOSFETs damaged by plasma processing—Conflicting results in plasma charging damage evaluation— TDDB lifetime enhancement of high-k MOSFETs damaged by plasma processing—Conflicting results in plasma charging damage evaluation— IEEE Int. Integrated Reliability Workshop Final Report, 43-46 IEEE Int. Integrated Reliability Workshop Final Report, 43-46 IEEE Int. Integrated Reliability Workshop Final Report, 43-46 2014 英語 公開
Y. Takao; K. Eriguchi; K. Ono Y. Takao; K. Eriguchi; K. Ono Y. Takao; K. Eriguchi; K. Ono Effect of capacitive coupling in a miniature inductively coupled plasma source Effect of capacitive coupling in a miniature inductively coupled plasma source Effect of capacitive coupling in a miniature inductively coupled plasma source J. Appl. Phys., 112, 9, 093306 J. Appl. Phys., 112, 9, 093306 J. Appl. Phys., 112, 9, 093306 2012/11 英語 公開
H. Tsuda; Y. Takao; K. Eriguchi; K. Ono H. Tsuda; Y. Takao; K. Eriguchi; K. Ono H. Tsuda; Y. Takao; K. Eriguchi; K. Ono Modeling and simulation of nanoscale surface rippling during plasma etching of Si under oblique ion incidence Modeling and simulation of nanoscale surface rippling during plasma etching of Si under oblique ion incidence Modeling and simulation of nanoscale surface rippling during plasma etching of Si under oblique ion incidence Jpn. J. Appl. Phys., 51, 8, 08HC01 Jpn. J. Appl. Phys., 51, 8, 08HC01 Jpn. J. Appl. Phys., 51, 8, 08HC01 2012/08 英語 公開
K. Eriguchi; M. Kamei; Y. Takao; K. Ono; K. Eriguchi; M. Kamei; Y. Takao; K. Ono; K. Eriguchi; M. Kamei; Y. Takao; K. Ono; High-k MOSFET performance degradation by plasma process-induced charging damage High-k MOSFET performance degradation by plasma process-induced charging damage High-k MOSFET performance degradation by plasma process-induced charging damage 2012 IEEE International Integrated Reliability Workshop Final Report, 80-84 2012 IEEE International Integrated Reliability Workshop Final Report, 80-84 2012 IEEE International Integrated Reliability Workshop Final Report, 80-84 2012 英語 公開
江利口浩二;中久保義則;松田朝彦;鷹尾祥典;斧高一 江利口浩二;中久保義則;松田朝彦;鷹尾祥典;斧高一 物理的プラズマダメージによるMOSFETバラツキ増大予測のための包括モデル 物理的プラズマダメージによるMOSFETバラツキ増大予測のための包括モデル 電子情報通信学会技術研究報告, 111, 249(SDM2011 97-114), 73-78 電子情報通信学会技術研究報告, 111, 249(SDM2011 97-114), 73-78 , 111, 249(SDM2011 97-114), 73-78 2011/10/13 日本語 公開
中久保義則;江利口浩二;松田朝彦;鷹尾祥典;斧高一 中久保義則;江利口浩二;松田朝彦;鷹尾祥典;斧高一 電気的手法を用いた物理的Si基板ダメージのプラズマプロセス依存性の検討 電気的手法を用いた物理的Si基板ダメージのプラズマプロセス依存性の検討 電子情報通信学会技術研究報告, 111, 249(SDM2011 97-114), 79-84 電子情報通信学会技術研究報告, 111, 249(SDM2011 97-114), 79-84 , 111, 249(SDM2011 97-114), 79-84 2011/10/13 日本語 公開
K. Eriguchi; M. Kamei; Y. Takao; K. Ono K. Eriguchi; M. Kamei; Y. Takao; K. Ono K. Eriguchi; M. Kamei; Y. Takao; K. Ono Analytic model of threshold voltage variation induced by plasma charging damage in high-k metal-oxide-semiconductor field-effect transistor Analytic model of threshold voltage variation induced by plasma charging damage in high-k metal-oxide-semiconductor field-effect transistor Analytic model of threshold voltage variation induced by plasma charging damage in high-k metal-oxide-semiconductor field-effect transistor Jpn. J. Appl. Phys., 50, 10, 10PG02 Jpn. J. Appl. Phys., 50, 10, 10PG02 Jpn. J. Appl. Phys., 50, 10, 10PG02 2011/10 英語 公開
鷹尾祥典;江利口浩二;斧高一 鷹尾祥典;江利口浩二;斧高一 超小型高周波イオン推進機におけるプラズマ源の周波数依存性 超小型高周波イオン推進機におけるプラズマ源の周波数依存性 電気学会プラズマ研究会資料, PST-11, 46-52.54-60.62, 49-54 電気学会プラズマ研究会資料, PST-11, 46-52.54-60.62, 49-54 , PST-11, 46-52.54-60.62, 49-54 2011/08/07 日本語 公開
Y. Takao; K. Matsuoka; K. Eriguchi; K. Ono Y. Takao; K. Matsuoka; K. Eriguchi; K. Ono Y. Takao; K. Matsuoka; K. Eriguchi; K. Ono Particle simulations of sheath dynamics in low-pressure capacitively coupled argon plasma discharges Particle simulations of sheath dynamics in low-pressure capacitively coupled argon plasma discharges Particle simulations of sheath dynamics in low-pressure capacitively coupled argon plasma discharges Jpn. J. Appl. Phys., 50, 8 Jpn. J. Appl. Phys., 50, 8 Jpn. J. Appl. Phys., 50, 8 2011/08 英語 公開
K. Eriguchi; Y. Takao; K. Ono K. Eriguchi; Y. Takao; K. Ono K. Eriguchi; Y. Takao; K. Ono Model for effects of RF bias frequency and waveform on Si damaged-layer formation during plasma etching Model for effects of RF bias frequency and waveform on Si damaged-layer formation during plasma etching Model for effects of RF bias frequency and waveform on Si damaged-layer formation during plasma etching Jpn. J. Appl. Phys., 50, 8 Jpn. J. Appl. Phys., 50, 8 Jpn. J. Appl. Phys., 50, 8 2011/08 英語 公開
H. Tsuda; H. Miyata; Y. Takao; K. Eriguchi; K. Ono H. Tsuda; H. Miyata; Y. Takao; K. Eriguchi; K. Ono H. Tsuda; H. Miyata; Y. Takao; K. Eriguchi; K. Ono Three-dimensional atomic-scale cellular model and feature profile evolution during Si etching in chlorine-based plasmas: Analysis of profile anomalies and surface roughness Three-dimensional atomic-scale cellular model and feature profile evolution during Si etching in chlorine-based plasmas: Analysis of profile anomalies and surface roughness Three-dimensional atomic-scale cellular model and feature profile evolution during Si etching in chlorine-based plasmas: Analysis of profile anomalies and surface roughness Jpn. J. Appl. Phys., 50, 8 Jpn. J. Appl. Phys., 50, 8 Jpn. J. Appl. Phys., 50, 8 2011/08 英語 公開
H. Tsuda; Y. Takao; K. Eriguchi; K. Ono H. Tsuda; Y. Takao; K. Eriguchi; K. Ono H. Tsuda; Y. Takao; K. Eriguchi; K. Ono Molecular dynamics analysis of the formation of surface roughness during Si etching in chlorine-based plasmas Molecular dynamics analysis of the formation of surface roughness during Si etching in chlorine-based plasmas Molecular dynamics analysis of the formation of surface roughness during Si etching in chlorine-based plasmas Jpn. J. Appl. Phys., 50, 8 Jpn. J. Appl. Phys., 50, 8 Jpn. J. Appl. Phys., 50, 8 2011/08 英語 公開
A. Matsuda; Y. Nakakubo; Y. Takao; K. Eriguchi; K. Ono A. Matsuda; Y. Nakakubo; Y. Takao; K. Eriguchi; K. Ono A. Matsuda; Y. Nakakubo; Y. Takao; K. Eriguchi; K. Ono Advanced contactless analysis of plasma-induced damage on Si by temperature-controlled photoreflectance spectroscopy Advanced contactless analysis of plasma-induced damage on Si by temperature-controlled photoreflectance spectroscopy Advanced contactless analysis of plasma-induced damage on Si by temperature-controlled photoreflectance spectroscopy Jpn. J. Appl. Phys., 50, 8 Jpn. J. Appl. Phys., 50, 8 Jpn. J. Appl. Phys., 50, 8 2011/08 英語 公開
K. Eriguchi; Y. Nakakubo; A. Matsuda; M. Kamei; Y. Takao; K. Ono K. Eriguchi; Y. Nakakubo; A. Matsuda; M. Kamei; Y. Takao; K. Ono K. Eriguchi; Y. Nakakubo; A. Matsuda; M. Kamei; Y. Takao; K. Ono Trade-off relationship between Si recess and defect density formed by plasma-induced damage in planar metal-oxide-semiconductor field-effect transistors and the optimization methodology Trade-off relationship between Si recess and defect density formed by plasma-induced damage in planar metal-oxide-semiconductor field-effect transistors and the optimization methodology Trade-off relationship between Si recess and defect density formed by plasma-induced damage in planar metal-oxide-semiconductor field-effect transistors and the optimization methodology Jpn. J. Appl. Phys., 50, 8, 08KD04 Jpn. J. Appl. Phys., 50, 8, 08KD04 Jpn. J. Appl. Phys., 50, 8, 08KD04 2011/08 英語 公開
M. Kamei; Y. Takao; K. Eriguchi; K. Ono M. Kamei; Y. Takao; K. Eriguchi; K. Ono M. Kamei; Y. Takao; K. Eriguchi; K. Ono Comparative study of plasma-charging damage in high-k dielectric and p-n junction and their effects on off-state leakage current of metal-oxide- semiconductor field-effect transistors Comparative study of plasma-charging damage in high-k dielectric and p-n junction and their effects on off-state leakage current of metal-oxide- semiconductor field-effect transistors Comparative study of plasma-charging damage in high-k dielectric and p-n junction and their effects on off-state leakage current of metal-oxide- semiconductor field-effect transistors Jpn. J. Appl. Phys., 50, 8, 08KD05 Jpn. J. Appl. Phys., 50, 8, 08KD05 Jpn. J. Appl. Phys., 50, 8, 08KD05 2011/08 英語 公開
M. Fukasawa; Y. Nakakubo; A. Matsuda; Y. Takao; K. Eriguchi; K. Ono; M. Minami; F. Uesawa; T. Tatsumi M. Fukasawa; Y. Nakakubo; A. Matsuda; Y. Takao; K. Eriguchi; K. Ono; M. Minami; F. Uesawa; T. Tatsumi M. Fukasawa; Y. Nakakubo; A. Matsuda; Y. Takao; K. Eriguchi; K. Ono; M. Minami; F. Uesawa; T. Tatsumi Structural and electrical characterization of HBr/O<sub>2</sub> plasma damage to Si substrate Structural and electrical characterization of HBr/O<sub>2</sub> plasma damage to Si substrate Structural and electrical characterization of HBr/O<sub>2</sub> plasma damage to Si substrate Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 29, 4 Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 29, 4 Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 29, 4 2011/07 英語 公開
K. Eriguchi; Y. Takao; K. Ono K. Eriguchi; Y. Takao; K. Ono K. Eriguchi; Y. Takao; K. Ono Modeling of plasma-induced damage and its impacts on parameter variations in advanced electronic devices Modeling of plasma-induced damage and its impacts on parameter variations in advanced electronic devices Modeling of plasma-induced damage and its impacts on parameter variations in advanced electronic devices Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 29, 4 Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 29, 4 Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 29, 4 2011/07 英語 公開
T. Takahashi; Y. Takao; Y. Ichida; K. Eriguchi; K. Ono T. Takahashi; Y. Takao; Y. Ichida; K. Eriguchi; K. Ono T. Takahashi; Y. Takao; Y. Ichida; K. Eriguchi; K. Ono Microwave-excited microplasma thruster with helium and hydrogen propellants Microwave-excited microplasma thruster with helium and hydrogen propellants Microwave-excited microplasma thruster with helium and hydrogen propellants Physics of Plasmas, 18, 6 Physics of Plasmas, 18, 6 Physics of Plasmas, 18, 6 2011/06 英語 公開
Y. Takao; N. Kusaba; K. Eriguchi; K. Ono Y. Takao; N. Kusaba; K. Eriguchi; K. Ono Y. Takao; N. Kusaba; K. Eriguchi; K. Ono Two-dimensional particle-in-cell Monte Carlo simulation of a miniature inductively coupled plasma source Two-dimensional particle-in-cell Monte Carlo simulation of a miniature inductively coupled plasma source Two-dimensional particle-in-cell Monte Carlo simulation of a miniature inductively coupled plasma source Journal of Applied Physics, 108, 9 Journal of Applied Physics, 108, 9 Journal of Applied Physics, 108, 9 2010/11/01 英語 公開
K. Ono; H. Ohta; K. Eriguchi K. Ono; H. Ohta; K. Eriguchi K. Ono; H. Ohta; K. Eriguchi Plasma-surface interactions for advanced plasma etching processes in nanoscale ULSI device fabrication: A numerical and experimental study Plasma-surface interactions for advanced plasma etching processes in nanoscale ULSI device fabrication: A numerical and experimental study Plasma-surface interactions for advanced plasma etching processes in nanoscale ULSI device fabrication: A numerical and experimental study Thin Solid Films, 518, 13, 3461-3468 Thin Solid Films, 518, 13, 3461-3468 Thin Solid Films, 518, 13, 3461-3468 2010/04/30 英語 公開
H. Tsuda; M. Mori; Y. Takao; K. Eriguchi; K. Ono H. Tsuda; M. Mori; Y. Takao; K. Eriguchi; K. Ono H. Tsuda; M. Mori; Y. Takao; K. Eriguchi; K. Ono Atomic-scale cellular model and profile simulation of Si etching: Formation of surface roughness and residue Atomic-scale cellular model and profile simulation of Si etching: Formation of surface roughness and residue Atomic-scale cellular model and profile simulation of Si etching: Formation of surface roughness and residue Thin Solid Films, 518, 13, 3475-3480 Thin Solid Films, 518, 13, 3475-3480 Thin Solid Films, 518, 13, 3475-3480 2010/04/30 英語 公開
K. Eriguchi; Z. Wei; T. Takagi; K. Ono K. Eriguchi; Z. Wei; T. Takagi; K. Ono K. Eriguchi; Z. Wei; T. Takagi; K. Ono Modeling of field- and time-dependent resistance change phenomena under electrical stresses in Fe-O films Modeling of field- and time-dependent resistance change phenomena under electrical stresses in Fe-O films Modeling of field- and time-dependent resistance change phenomena under electrical stresses in Fe-O films Journal of Applied Physics, 107, 1 Journal of Applied Physics, 107, 1 Journal of Applied Physics, 107, 1 2010 英語 公開
A. Matsuda; Y. Nakakubo; Y. Takao; K. Eriguchi; K. Ono A. Matsuda; Y. Nakakubo; Y. Takao; K. Eriguchi; K. Ono A. Matsuda; Y. Nakakubo; Y. Takao; K. Eriguchi; K. Ono Modeling of ion-bombardment damage on Si surfaces for in-line analysis Modeling of ion-bombardment damage on Si surfaces for in-line analysis Modeling of ion-bombardment damage on Si surfaces for in-line analysis Thin Solid Films, 518, 13, 3481-3486 Thin Solid Films, 518, 13, 3481-3486 Thin Solid Films, 518, 13, 3481-3486 2010 英語 公開
M. Kamei; Y. Nakakubo; K. Eriguchi; K. Ono M. Kamei; Y. Nakakubo; K. Eriguchi; K. Ono M. Kamei; Y. Nakakubo; K. Eriguchi; K. Ono Bias frequency dependence of pn junction charging damage induced by plasma processing Bias frequency dependence of pn junction charging damage induced by plasma processing Bias frequency dependence of pn junction charging damage induced by plasma processing Thin Solid Films, 518, 13, 3469-3474 Thin Solid Films, 518, 13, 3469-3474 Thin Solid Films, 518, 13, 3469-3474 2010 英語 公開
K. Eriguchi; Y. Nakakubo; A. Matsuda; Y. Takao; K. Ono K. Eriguchi; Y. Nakakubo; A. Matsuda; Y. Takao; K. Ono K. Eriguchi; Y. Nakakubo; A. Matsuda; Y. Takao; K. Ono Model for bias frequency effects on plasma-damaged layer formation in Si substrates Model for bias frequency effects on plasma-damaged layer formation in Si substrates Model for bias frequency effects on plasma-damaged layer formation in Si substrates Jpn. J. Appl. Phys., 49, 5 PART 1, 0562031-05620311 Jpn. J. Appl. Phys., 49, 5 PART 1, 0562031-05620311 Jpn. J. Appl. Phys., 49, 5 PART 1, 0562031-05620311 2010 英語 公開
K. Eriguchi; Y. Nakakubo; A. Matsuda; M. Kamei; Y. Takao; K. Ono K. Eriguchi; Y. Nakakubo; A. Matsuda; M. Kamei; Y. Takao; K. Ono K. Eriguchi; Y. Nakakubo; A. Matsuda; M. Kamei; Y. Takao; K. Ono Comprehensive modeling of threshold voltage variability induced by plasma damage in advanced metal-oxide-semiconductor field-effect transistors Comprehensive modeling of threshold voltage variability induced by plasma damage in advanced metal-oxide-semiconductor field-effect transistors Comprehensive modeling of threshold voltage variability induced by plasma damage in advanced metal-oxide-semiconductor field-effect transistors Jpn. J. Appl. Phys., 49, 4 PART 2 Jpn. J. Appl. Phys., 49, 4 PART 2 Jpn. J. Appl. Phys., 49, 4 PART 2 2010 英語 公開
K. Eriguchi; Y. Nakakubo; A. Matsuda; M. Kamei; Y. Takao; K. Ono K. Eriguchi; Y. Nakakubo; A. Matsuda; M. Kamei; Y. Takao; K. Ono K. Eriguchi; Y. Nakakubo; A. Matsuda; M. Kamei; Y. Takao; K. Ono Threshold voltage instability induced by plasma process damage in advanced metal-oxide-semiconductor field-effect transistors Threshold voltage instability induced by plasma process damage in advanced metal-oxide-semiconductor field-effect transistors Threshold voltage instability induced by plasma process damage in advanced metal-oxide-semiconductor field-effect transistors Jpn. J. Appl. Phys., 49, 8 PART 2 Jpn. J. Appl. Phys., 49, 8 PART 2 Jpn. J. Appl. Phys., 49, 8 PART 2 2010 英語 公開
Y. Nakakubo; A. Matsuda; M. Fukasawa; Y. Takao; T. Tatsumi; K. Eriguchi; K. Ono Y. Nakakubo; A. Matsuda; M. Fukasawa; Y. Takao; T. Tatsumi; K. Eriguchi; K. Ono Y. Nakakubo; A. Matsuda; M. Fukasawa; Y. Takao; T. Tatsumi; K. Eriguchi; K. Ono Optical and electrical characterization of hydrogen-plasma-damaged silicon surface structures and its impact on in-line monitoring Optical and electrical characterization of hydrogen-plasma-damaged silicon surface structures and its impact on in-line monitoring Optical and electrical characterization of hydrogen-plasma-damaged silicon surface structures and its impact on in-line monitoring Jpn. J. Appl. Phys., 49, 8 PART 2 Jpn. J. Appl. Phys., 49, 8 PART 2 Jpn. J. Appl. Phys., 49, 8 PART 2 2010 英語 公開
H. Tsuda; M. Mori; Y. Takao; K. Eriguchi; K. Ono H. Tsuda; M. Mori; Y. Takao; K. Eriguchi; K. Ono H. Tsuda; M. Mori; Y. Takao; K. Eriguchi; K. Ono Atomic-scale cellular model and profile simulation of Si etching: Analysis of profile anomalies and microscopic uniformity Atomic-scale cellular model and profile simulation of Si etching: Analysis of profile anomalies and microscopic uniformity Atomic-scale cellular model and profile simulation of Si etching: Analysis of profile anomalies and microscopic uniformity Jpn. J. Appl. Phys., 49, 8 PART 2 Jpn. J. Appl. Phys., 49, 8 PART 2 Jpn. J. Appl. Phys., 49, 8 PART 2 2010 英語 公開
T. Saegusa; K. Eriguchi; K. Ono; H. Ohta T. Saegusa; K. Eriguchi; K. Ono; H. Ohta T. Saegusa; K. Eriguchi; K. Ono; H. Ohta Molecular dynamics evaluation of thermal transport in naked and oxide-coated silicon nanowires Molecular dynamics evaluation of thermal transport in naked and oxide-coated silicon nanowires Molecular dynamics evaluation of thermal transport in naked and oxide-coated silicon nanowires Jpn. J. Appl. Phys., 49, 9 PART 1 Jpn. J. Appl. Phys., 49, 9 PART 1 Jpn. J. Appl. Phys., 49, 9 PART 1 2010 英語 公開
Y. Nakakubo; A. Matsuda; M. Kamei; H. Ohta; K. Eriguchi; K. Ono Y. Nakakubo; A. Matsuda; M. Kamei; H. Ohta; K. Eriguchi; K. Ono Y. Nakakubo; A. Matsuda; M. Kamei; H. Ohta; K. Eriguchi; K. Ono Analysis of SI substrate damage induced by inductively coupled plasma reactor with various superposed bias frequencies Analysis of SI substrate damage induced by inductively coupled plasma reactor with various superposed bias frequencies Analysis of SI substrate damage induced by inductively coupled plasma reactor with various superposed bias frequencies Lecture Notes in Electrical Engineering, 2021 LNEE, 107-120 Lecture Notes in Electrical Engineering, 2021 LNEE, 107-120 Lecture Notes in Electrical Engineering, 2021 LNEE, 107-120 2010 英語 公開
K. Eriguchi; M. Kamei; K. Okada; H. Ohta; K. Ono K. Eriguchi; M. Kamei; K. Okada; H. Ohta; K. Ono K. Eriguchi; M. Kamei; K. Okada; H. Ohta; K. Ono Threshold voltage shift instability induced by plasma charging damage in MOSFETS with high-K dielectric Threshold voltage shift instability induced by plasma charging damage in MOSFETS with high-K dielectric Threshold voltage shift instability induced by plasma charging damage in MOSFETS with high-K dielectric Lecture Notes in Electrical Engineering, 2021 LNEE, 97-106 Lecture Notes in Electrical Engineering, 2021 LNEE, 97-106 Lecture Notes in Electrical Engineering, 2021 LNEE, 97-106 2010 英語 公開
T. Takahashi; Y. Takao; K. Eriguchi; K. Ono T. Takahashi; Y. Takao; K. Eriguchi; K. Ono T. Takahashi; Y. Takao; K. Eriguchi; K. Ono Numerical simulation of microwave-excited microplasma thruster with helium propellant Numerical simulation of microwave-excited microplasma thruster with helium propellant Numerical simulation of microwave-excited microplasma thruster with helium propellant 61st International Astronautical Congress 2010, IAC 2010, 8, 6204-6206 61st International Astronautical Congress 2010, IAC 2010, 8, 6204-6206 61st International Astronautical Congress 2010, IAC 2010, 8, 6204-6206 2010 英語 公開
K. Eriguchi; Y. Nakakubo; A. Matsuda; Y. Takao; K. Ono K. Eriguchi; Y. Nakakubo; A. Matsuda; Y. Takao; K. Ono K. Eriguchi; Y. Nakakubo; A. Matsuda; Y. Takao; K. Ono Plasma-induced defect-site generation in si substrate and its impact on performance degradation in scaled MOSFETs Plasma-induced defect-site generation in si substrate and its impact on performance degradation in scaled MOSFETs Plasma-induced defect-site generation in si substrate and its impact on performance degradation in scaled MOSFETs IEEE Electron Device Letters, 30, 12, 1275-1277 IEEE Electron Device Letters, 30, 12, 1275-1277 IEEE Electron Device Letters, 30, 12, 1275-1277 2009/12 英語 公開
H. Fukumoto; I. Fujikake; Y. Takao; K. Eriguchi; K. Ono H. Fukumoto; I. Fujikake; Y. Takao; K. Eriguchi; K. Ono H. Fukumoto; I. Fujikake; Y. Takao; K. Eriguchi; K. Ono Plasma chemical behaviour of reactants and reaction products during inductively coupled CF<sub>4</sub> plasma etching of SiO<sub>2</sub> Plasma chemical behaviour of reactants and reaction products during inductively coupled CF<sub>4</sub> plasma etching of SiO<sub>2</sub> Plasma chemical behaviour of reactants and reaction products during inductively coupled CF<sub>4</sub> plasma etching of SiO<sub>2</sub> Plasma Sources Science and Technology, 18, 4 Plasma Sources Science and Technology, 18, 4 Plasma Sources Science and Technology, 18, 4 2009/11 英語 公開
H. Tsuda; K. Eriguchi; K. Ono; H. Ohta H. Tsuda; K. Eriguchi; K. Ono; H. Ohta H. Tsuda; K. Eriguchi; K. Ono; H. Ohta Molecular-dynamics-based profile evolution simulation for sub-10-nm si processing technology Molecular-dynamics-based profile evolution simulation for sub-10-nm si processing technology Molecular-dynamics-based profile evolution simulation for sub-10-nm si processing technology Applied Physics Express, 2, 11 Applied Physics Express, 2, 11 Applied Physics Express, 2, 11 2009/11 英語 公開
T. Takahashi; Y. Takao; K. Eriguchi; K. Ono T. Takahashi; Y. Takao; K. Eriguchi; K. Ono T. Takahashi; Y. Takao; K. Eriguchi; K. Ono Numerical and experimental study of microwave-excited microplasma and micronozzle flow for a microplasma thruster Numerical and experimental study of microwave-excited microplasma and micronozzle flow for a microplasma thruster Numerical and experimental study of microwave-excited microplasma and micronozzle flow for a microplasma thruster Physics of Plasmas, 16, 8 Physics of Plasmas, 16, 8 Physics of Plasmas, 16, 8 2009/08 英語 公開
K. Nakamura; D. Hamada; Y. Ueda; K. Eriguchi; K. Ono K. Nakamura; D. Hamada; Y. Ueda; K. Eriguchi; K. Ono K. Nakamura; D. Hamada; Y. Ueda; K. Eriguchi; K. Ono Selective etching of high-k dielectric HfO<sub>2</sub> films over Si in BCl<sub>3</sub>-containing plasmas without rf biasing Selective etching of high-k dielectric HfO<sub>2</sub> films over Si in BCl<sub>3</sub>-containing plasmas without rf biasing Selective etching of high-k dielectric HfO<sub>2</sub> films over Si in BCl<sub>3</sub>-containing plasmas without rf biasing Applied Physics Express, 2, 1 Applied Physics Express, 2, 1 Applied Physics Express, 2, 1 2009/01 英語 公開
Takahashi, Takeshi; Ichida, Yugo; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi Takahashi, Takeshi; Ichida, Yugo; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi Takahashi, Takeshi; Ichida, Yugo; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi Numerical Simulation of a Microwave-Excited Microplasma Thruster Numerical Simulation of a Microwave-Excited Microplasma Thruster Numerical Simulation of a Microwave-Excited Microplasma Thruster TRANSACTIONS OF THE JAPAN SOCIETY FOR AERONAUTICAL AND SPACE SCIENCES, SPACE TECHNOLOGY JAPAN, 7, 26, Pb_135-Pb_140 TRANSACTIONS OF THE JAPAN SOCIETY FOR AERONAUTICAL AND SPACE SCIENCES, SPACE TECHNOLOGY JAPAN, 7, 26, Pb_135-Pb_140 TRANSACTIONS OF THE JAPAN SOCIETY FOR AERONAUTICAL AND SPACE SCIENCES, SPACE TECHNOLOGY JAPAN, 7, 26, Pb_135-Pb_140 2009 英語 公開
K. Eriguchi; Z. Wei; T. Takagi; H. Ohta; K. Ono K. Eriguchi; Z. Wei; T. Takagi; H. Ohta; K. Ono K. Eriguchi; Z. Wei; T. Takagi; H. Ohta; K. Ono Field and polarity dependence of time-to-resistance increase in Fe-O films studied by constant voltage stress method Field and polarity dependence of time-to-resistance increase in Fe-O films studied by constant voltage stress method Field and polarity dependence of time-to-resistance increase in Fe-O films studied by constant voltage stress method Applied Physics Letters, 94, 1 Applied Physics Letters, 94, 1 Applied Physics Letters, 94, 1 2009 英語 公開
T. Nagaoka; K. Eriguchi; K. Ono; H. Ohta T. Nagaoka; K. Eriguchi; K. Ono; H. Ohta T. Nagaoka; K. Eriguchi; K. Ono; H. Ohta Classical interatomic potential model for Si/H/Br systems and its application to atomistic Si etching simulation by HBr+ Classical interatomic potential model for Si/H/Br systems and its application to atomistic Si etching simulation by HBr+ Classical interatomic potential model for Si/H/Br systems and its application to atomistic Si etching simulation by HBr+ Journal of Applied Physics, 105, 2 Journal of Applied Physics, 105, 2 Journal of Applied Physics, 105, 2 2009 英語 公開
H. Ohta; T. Nagaoka; K. Eriguchi; K. Ono H. Ohta; T. Nagaoka; K. Eriguchi; K. Ono H. Ohta; T. Nagaoka; K. Eriguchi; K. Ono An improvement of Stillinger-Weber interatomic potential model for reactive ion etching simulations An improvement of Stillinger-Weber interatomic potential model for reactive ion etching simulations An improvement of Stillinger-Weber interatomic potential model for reactive ion etching simulations Jpn. J. Appl. Phys., 48, 2 Jpn. J. Appl. Phys., 48, 2 Jpn. J. Appl. Phys., 48, 2 2009 英語 公開
K. Eriguchi; A. Matsuda; Y. Nakakubo; M. Kamei; H. Ohta; K. Ono K. Eriguchi; A. Matsuda; Y. Nakakubo; M. Kamei; H. Ohta; K. Ono K. Eriguchi; A. Matsuda; Y. Nakakubo; M. Kamei; H. Ohta; K. Ono Effects of plasma-induced Si recess structure on n-MOSFET performance degradation Effects of plasma-induced Si recess structure on n-MOSFET performance degradation Effects of plasma-induced Si recess structure on n-MOSFET performance degradation IEEE Electron Device Letters, 30, 7, 712-714 IEEE Electron Device Letters, 30, 7, 712-714 IEEE Electron Device Letters, 30, 7, 712-714 2009 英語 公開
T. Nagaoka; H. Ohta; K. Eriguchi; K. Ono T. Nagaoka; H. Ohta; K. Eriguchi; K. Ono T. Nagaoka; H. Ohta; K. Eriguchi; K. Ono Numerical study on Si etching by monatomic Br<sup>+</sup>/Cl<sup>+</sup> beams and diatomic Br<sub>2</sub>1<sup>+</sup>/Cl<sub>2</sub><sup>+</sup>/HBr<sup>+</sup> beams Numerical study on Si etching by monatomic Br<sup>+</sup>/Cl<sup>+</sup> beams and diatomic Br<sub>2</sub>1<sup>+</sup>/Cl<sub>2</sub><sup>+</sup>/HBr<sup>+</sup> beams Numerical study on Si etching by monatomic Br<sup>+</sup>/Cl<sup>+</sup> beams and diatomic Br<sub>2</sub>1<sup>+</sup>/Cl<sub>2</sub><sup>+</sup>/HBr<sup>+</sup> beams Jpn. J. Appl. Phys., 48, 7 PART 1 Jpn. J. Appl. Phys., 48, 7 PART 1 Jpn. J. Appl. Phys., 48, 7 PART 1 2009 英語 公開
H. Fukumoto; K. Eriguchi; K. Ono H. Fukumoto; K. Eriguchi; K. Ono H. Fukumoto; K. Eriguchi; K. Ono Effects of mask pattern geometry on plasma etching profiles Effects of mask pattern geometry on plasma etching profiles Effects of mask pattern geometry on plasma etching profiles Jpn. J. Appl. Phys., 48, 9 Part 1, 0960011-09600110 Jpn. J. Appl. Phys., 48, 9 Part 1, 0960011-09600110 Jpn. J. Appl. Phys., 48, 9 Part 1, 0960011-09600110 2009 英語 公開
T. Takahashi; Y. Takao; K. Eriguchi; K. Ono T. Takahashi; Y. Takao; K. Eriguchi; K. Ono T. Takahashi; Y. Takao; K. Eriguchi; K. Ono Microwave-excited microplasma thruster: A numerical and experimental study of the plasma generation and micronozzle flow Microwave-excited microplasma thruster: A numerical and experimental study of the plasma generation and micronozzle flow Microwave-excited microplasma thruster: A numerical and experimental study of the plasma generation and micronozzle flow Journal of Physics D: Applied Physics, 41, 19 Journal of Physics D: Applied Physics, 41, 19 Journal of Physics D: Applied Physics, 41, 19 2008/10/07 英語 公開
Y. Takao; T. Takahashi; K. Eriguchi; K. Ono Y. Takao; T. Takahashi; K. Eriguchi; K. Ono Y. Takao; T. Takahashi; K. Eriguchi; K. Ono Microplasma thruster for ultra-small satellites: Plasma chemical and aerodynamical aspects Microplasma thruster for ultra-small satellites: Plasma chemical and aerodynamical aspects Microplasma thruster for ultra-small satellites: Plasma chemical and aerodynamical aspects Pure and Applied Chemistry, 80, 9, 2013-2023 Pure and Applied Chemistry, 80, 9, 2013-2023 Pure and Applied Chemistry, 80, 9, 2013-2023 2008/09 英語 公開
K. Eriguchi; K. Ono K. Eriguchi; K. Ono K. Eriguchi; K. Ono Quantitative and comparative characterizations of plasma process-induced damage in advanced metal-oxide-semiconductor devices Quantitative and comparative characterizations of plasma process-induced damage in advanced metal-oxide-semiconductor devices Quantitative and comparative characterizations of plasma process-induced damage in advanced metal-oxide-semiconductor devices Journal of Physics D: Applied Physics, 41, 2 Journal of Physics D: Applied Physics, 41, 2 Journal of Physics D: Applied Physics, 41, 2 2008 英語 公開
K. Eriguchi; A. Ohno; D. Hamada; M. Kamei; K. Ono K. Eriguchi; A. Ohno; D. Hamada; M. Kamei; K. Ono K. Eriguchi; A. Ohno; D. Hamada; M. Kamei; K. Ono Estimation of defect generation probability in thin Si surface damaged layer during plasma processing Estimation of defect generation probability in thin Si surface damaged layer during plasma processing Estimation of defect generation probability in thin Si surface damaged layer during plasma processing Thin Solid Films, 516, 19, 6604-6608 Thin Solid Films, 516, 19, 6604-6608 Thin Solid Films, 516, 19, 6604-6608 2008 英語 公開
H. Ohta; A. Iwakawa; K. Eriguchi; K. Ono H. Ohta; A. Iwakawa; K. Eriguchi; K. Ono H. Ohta; A. Iwakawa; K. Eriguchi; K. Ono An interatomic potential model for molecular dynamics simulation of silicon etching by Br+ -containing plasmas An interatomic potential model for molecular dynamics simulation of silicon etching by Br+ -containing plasmas An interatomic potential model for molecular dynamics simulation of silicon etching by Br+ -containing plasmas Journal of Applied Physics, 104, 7 Journal of Applied Physics, 104, 7 Journal of Applied Physics, 104, 7 2008 英語 公開
K. Eriguchi; M. Kamet; D. Hamada; K. Okada; K. Ono K. Eriguchi; M. Kamet; D. Hamada; K. Okada; K. Ono K. Eriguchi; M. Kamet; D. Hamada; K. Okada; K. Ono Comparative study of plasma source-dependent charging polarity in metal-oxide-semiconductor field effect transistors with high-k and SiO <sub>2</sub> gate dielectrics Comparative study of plasma source-dependent charging polarity in metal-oxide-semiconductor field effect transistors with high-k and SiO <sub>2</sub> gate dielectrics Comparative study of plasma source-dependent charging polarity in metal-oxide-semiconductor field effect transistors with high-k and SiO <sub>2</sub> gate dielectrics Jpn. J. Appl. Phys., 47, 4 PART 2, 2369-2374 Jpn. J. Appl. Phys., 47, 4 PART 2, 2369-2374 Jpn. J. Appl. Phys., 47, 4 PART 2, 2369-2374 2008 英語 公開
K. Eriguchi; A. Ohno; D. Hamada; M. Kamei; H. Fukumoto; K. Ono K. Eriguchi; A. Ohno; D. Hamada; M. Kamei; H. Fukumoto; K. Ono K. Eriguchi; A. Ohno; D. Hamada; M. Kamei; H. Fukumoto; K. Ono Quantitative characterization of plasma-induced defect generation process in exposed thin si surface layers Quantitative characterization of plasma-induced defect generation process in exposed thin si surface layers Quantitative characterization of plasma-induced defect generation process in exposed thin si surface layers Jpn. J. Appl. Phys., 47, 4 PART 2, 2446-2451 Jpn. J. Appl. Phys., 47, 4 PART 2, 2446-2451 Jpn. J. Appl. Phys., 47, 4 PART 2, 2446-2451 2008 英語 公開
A. Iwakawa; T. Nagaoka; H. Ohta; K. Eriguchi; K. Ono A. Iwakawa; T. Nagaoka; H. Ohta; K. Eriguchi; K. Ono A. Iwakawa; T. Nagaoka; H. Ohta; K. Eriguchi; K. Ono Molecular dynamics simulation of Si etching by off-normal Cl<sup>+</sup> bombardment at high neutral-to-ion flux ratios Molecular dynamics simulation of Si etching by off-normal Cl<sup>+</sup> bombardment at high neutral-to-ion flux ratios Molecular dynamics simulation of Si etching by off-normal Cl<sup>+</sup> bombardment at high neutral-to-ion flux ratios Jpn. J. Appl. Phys., 47, 11, 8560-8564 Jpn. J. Appl. Phys., 47, 11, 8560-8564 Jpn. J. Appl. Phys., 47, 11, 8560-8564 2008 英語 公開
K. Eriguchi; Y. Nakakubo; A. Matsuda; M. Kamei; H. Ohta; H. Nakagawa; S. Hayashi; S. Noda; K. Ishikawa; M. Yoshimaru; K. Ono K. Eriguchi; Y. Nakakubo; A. Matsuda; M. Kamei; H. Ohta; H. Nakagawa; S. Hayashi; S. Noda; K. Ishikawa; M. Yoshimaru; K. Ono K. Eriguchi; Y. Nakakubo; A. Matsuda; M. Kamei; H. Ohta; H. Nakagawa; S. Hayashi; S. Noda; K. Ishikawa; M. Yoshimaru; K. Ono A new framework for performance prediction of advanced MOSFETs with plasma-induced recess structure and latent defect site A new framework for performance prediction of advanced MOSFETs with plasma-induced recess structure and latent defect site A new framework for performance prediction of advanced MOSFETs with plasma-induced recess structure and latent defect site Technical Digest - International Electron Devices Meeting, IEDM Technical Digest - International Electron Devices Meeting, IEDM Technical Digest - International Electron Devices Meeting, IEDM 2008 英語 公開
Y. Takao; K. Eriguchi; K. Ono Y. Takao; K. Eriguchi; K. Ono Y. Takao; K. Eriguchi; K. Ono A miniature electrothermal thruster using microwave-excited microplasmas: Thrust measurement and its comparison with numerical analysis A miniature electrothermal thruster using microwave-excited microplasmas: Thrust measurement and its comparison with numerical analysis A miniature electrothermal thruster using microwave-excited microplasmas: Thrust measurement and its comparison with numerical analysis Journal of Applied Physics, 101, 12 Journal of Applied Physics, 101, 12 Journal of Applied Physics, 101, 12 2007/06/15 英語 公開
Y. Osano; M. Mori; N. Itabashi; K. Takahashi; K. Eriguchi; K. Ono Y. Osano; M. Mori; N. Itabashi; K. Takahashi; K. Eriguchi; K. Ono Y. Osano; M. Mori; N. Itabashi; K. Takahashi; K. Eriguchi; K. Ono A model analysis of feature profile evolution and microscopic uniformity during polysilicon gate etching in Cl<sub>2</sub>/O<sub>2</sub> plasmas A model analysis of feature profile evolution and microscopic uniformity during polysilicon gate etching in Cl<sub>2</sub>/O<sub>2</sub> plasmas A model analysis of feature profile evolution and microscopic uniformity during polysilicon gate etching in Cl<sub>2</sub>/O<sub>2</sub> plasmas Jpn. J. Appl. Phys., 45, 10B, 8157-8162 Jpn. J. Appl. Phys., 45, 10B, 8157-8162 Jpn. J. Appl. Phys., 45, 10B, 8157-8162 2006/10 英語 公開
Y. Takao; K. Ono; K. Takahashi; K. Eriguchi Y. Takao; K. Ono; K. Takahashi; K. Eriguchi Y. Takao; K. Ono; K. Takahashi; K. Eriguchi Plasma diagnostics and thrust performance analysis of a microwave-excited microplasma thruster Plasma diagnostics and thrust performance analysis of a microwave-excited microplasma thruster Plasma diagnostics and thrust performance analysis of a microwave-excited microplasma thruster Jpn. J. Appl. Phys., 45, 10B, 8235-8240 Jpn. J. Appl. Phys., 45, 10B, 8235-8240 Jpn. J. Appl. Phys., 45, 10B, 8235-8240 2006/10 英語 公開
K. Eriguchi; P. Nicollian K. Eriguchi; P. Nicollian K. Eriguchi; P. Nicollian CMOS and interconnect reliability gate dielectric reliability - Breakdown, and device degradation mechanism CMOS and interconnect reliability gate dielectric reliability - Breakdown, and device degradation mechanism CMOS and interconnect reliability gate dielectric reliability - Breakdown, and device degradation mechanism Technical Digest - International Electron Devices Meeting, IEDM, 709- Technical Digest - International Electron Devices Meeting, IEDM, 709- Technical Digest - International Electron Devices Meeting, IEDM, 709- 2004 英語 公開
S. Hayashi; K. Yamamoto; Y. Harada; R. Mitsuhashi; K. Eriguchi; M. Kubota; M. Niwa S. Hayashi; K. Yamamoto; Y. Harada; R. Mitsuhashi; K. Eriguchi; M. Kubota; M. Niwa S. Hayashi; K. Yamamoto; Y. Harada; R. Mitsuhashi; K. Eriguchi; M. Kubota; M. Niwa Comparison of thermal and plasma oxidations for HfO<sub>2</sub>/Si interface Comparison of thermal and plasma oxidations for HfO<sub>2</sub>/Si interface Comparison of thermal and plasma oxidations for HfO<sub>2</sub>/Si interface Applied Surface Science, 216, 1-4 SPEC., 228-233 Applied Surface Science, 216, 1-4 SPEC., 228-233 Applied Surface Science, 216, 1-4 SPEC., 228-233 2003 英語 公開
M. Sohgawa; M. Agata; T. Kanashima; K. Yamashita; K. Eriguchi; A. Fujimoto; M. Okuyama M. Sohgawa; M. Agata; T. Kanashima; K. Yamashita; K. Eriguchi; A. Fujimoto; M. Okuyama M. Sohgawa; M. Agata; T. Kanashima; K. Yamashita; K. Eriguchi; A. Fujimoto; M. Okuyama Nondestructive and contactless monitoring technique of Si surface stress by photoreflectance Nondestructive and contactless monitoring technique of Si surface stress by photoreflectance Nondestructive and contactless monitoring technique of Si surface stress by photoreflectance Jpn. J. Appl. Phys., 40, 4 B, 2844-2848 Jpn. J. Appl. Phys., 40, 4 B, 2844-2848 Jpn. J. Appl. Phys., 40, 4 B, 2844-2848 2001 英語 公開
K. Eriguchi; Y. Harada; M. Niwa K. Eriguchi; Y. Harada; M. Niwa K. Eriguchi; Y. Harada; M. Niwa Effects of base layer thickness on reliability of CVD Si<sub>3</sub>N<sub>4</sub> stack gate dielectrics Effects of base layer thickness on reliability of CVD Si<sub>3</sub>N<sub>4</sub> stack gate dielectrics Effects of base layer thickness on reliability of CVD Si<sub>3</sub>N<sub>4</sub> stack gate dielectrics Microelectronics and Reliability, 41, 4, 587-595 Microelectronics and Reliability, 41, 4, 587-595 Microelectronics and Reliability, 41, 4, 587-595 2001 英語 公開
T. Yamada; M. Moriwaki; Y. Harada; S. Fujii; K. Eriguchi T. Yamada; M. Moriwaki; Y. Harada; S. Fujii; K. Eriguchi T. Yamada; M. Moriwaki; Y. Harada; S. Fujii; K. Eriguchi Effects of the sputtering deposition process of metal gate electrode on the gate dielectric characteristics Effects of the sputtering deposition process of metal gate electrode on the gate dielectric characteristics Effects of the sputtering deposition process of metal gate electrode on the gate dielectric characteristics Microelectronics and Reliability, 41, 5, 697-704 Microelectronics and Reliability, 41, 5, 697-704 Microelectronics and Reliability, 41, 5, 697-704 2001 英語 公開
K. Eriguchi; Y. Harada; M. Niwa K. Eriguchi; Y. Harada; M. Niwa K. Eriguchi; Y. Harada; M. Niwa Effects of strained layer near SiO<sub>2</sub>-Si interface on electrical characteristics of ultrathin gate oxides Effects of strained layer near SiO<sub>2</sub>-Si interface on electrical characteristics of ultrathin gate oxides Effects of strained layer near SiO<sub>2</sub>-Si interface on electrical characteristics of ultrathin gate oxides Journal of Applied Physics, 87, 4, 1990-1995 Journal of Applied Physics, 87, 4, 1990-1995 Journal of Applied Physics, 87, 4, 1990-1995 2000 英語 公開
H. Wada; M. Agata; K. Eriguchi; A. Fujimoto; T. Kanashima; M. Okuyama H. Wada; M. Agata; K. Eriguchi; A. Fujimoto; T. Kanashima; M. Okuyama H. Wada; M. Agata; K. Eriguchi; A. Fujimoto; T. Kanashima; M. Okuyama Photoreflectance characterization of the plasma-induced damage in Si substrate Photoreflectance characterization of the plasma-induced damage in Si substrate Photoreflectance characterization of the plasma-induced damage in Si substrate Journal of Applied Physics, 88, 5, 2336-2341 Journal of Applied Physics, 88, 5, 2336-2341 Journal of Applied Physics, 88, 5, 2336-2341 2000 英語 公開
M. Agata; H. Wada; O. Maida; K. Eriguchi; A. Fujimoto; T. Kanashima; M. Okuyama M. Agata; H. Wada; O. Maida; K. Eriguchi; A. Fujimoto; T. Kanashima; M. Okuyama M. Agata; H. Wada; O. Maida; K. Eriguchi; A. Fujimoto; T. Kanashima; M. Okuyama Optical characterization of gate oxide charging damage by photoreflectance spectroscopy Optical characterization of gate oxide charging damage by photoreflectance spectroscopy Optical characterization of gate oxide charging damage by photoreflectance spectroscopy Jpn. J. Appl. Phys., 39, 4 B, 2040-2044 Jpn. J. Appl. Phys., 39, 4 B, 2040-2044 Jpn. J. Appl. Phys., 39, 4 B, 2040-2044 2000 英語 公開
Y. Harada; K. Eriguchi; M. Niwa; T. Watanabe; I. Ohdomari Y. Harada; K. Eriguchi; M. Niwa; T. Watanabe; I. Ohdomari Y. Harada; K. Eriguchi; M. Niwa; T. Watanabe; I. Ohdomari Impact of structural strained layer near SiO<sub>2</sub>/Si interface on activation energy of time-dependent dielectric breakdown Impact of structural strained layer near SiO<sub>2</sub>/Si interface on activation energy of time-dependent dielectric breakdown Impact of structural strained layer near SiO<sub>2</sub>/Si interface on activation energy of time-dependent dielectric breakdown Jpn. J. Appl. Phys., 39, 7 B, 4687-4691 Jpn. J. Appl. Phys., 39, 7 B, 4687-4691 Jpn. J. Appl. Phys., 39, 7 B, 4687-4691 2000 英語 公開
Takayuki Yamada; Masaru Moriwaki; Yoshinao Harada; Shinji Fujii; Koji Eriguchi Takayuki Yamada; Masaru Moriwaki; Yoshinao Harada; Shinji Fujii; Koji Eriguchi Takayuki Yamada; Masaru Moriwaki; Yoshinao Harada; Shinji Fujii; Koji Eriguchi Metal gate MOS reliability with the improved sputtering process for gate electrode Metal gate MOS reliability with the improved sputtering process for gate electrode Metal gate MOS reliability with the improved sputtering process for gate electrode Technical Digest - International Electron Devices Meeting, 319-322 Technical Digest - International Electron Devices Meeting, 319-322 Technical Digest - International Electron Devices Meeting, 319-322 1999 英語 公開
Koji Eriguchi; Yoshinao Harada; Masaaki Niwa Koji Eriguchi; Yoshinao Harada; Masaaki Niwa Koji Eriguchi; Yoshinao Harada; Masaaki Niwa Role of base layer in CVD Si<sub>3</sub>N<sub>4</sub> stack gate dielectrics on the process controllability and reliability in direct tunneling regime Role of base layer in CVD Si<sub>3</sub>N<sub>4</sub> stack gate dielectrics on the process controllability and reliability in direct tunneling regime Role of base layer in CVD Si<sub>3</sub>N<sub>4</sub> stack gate dielectrics on the process controllability and reliability in direct tunneling regime Technical Digest - International Electron Devices Meeting, 323-326 Technical Digest - International Electron Devices Meeting, 323-326 Technical Digest - International Electron Devices Meeting, 323-326 1999 英語 公開
K. Eriguchi; M. Niwa K. Eriguchi; M. Niwa K. Eriguchi; M. Niwa Temperature and stress polarity-dependent dielectric breakdown in ultrathin gate oxides Temperature and stress polarity-dependent dielectric breakdown in ultrathin gate oxides Temperature and stress polarity-dependent dielectric breakdown in ultrathin gate oxides Applied Physics Letters, 73, 14, 1985-1987 Applied Physics Letters, 73, 14, 1985-1987 Applied Physics Letters, 73, 14, 1985-1987 1998 英語 公開
K. Eriguchi; Y. Kosaka K. Eriguchi; Y. Kosaka K. Eriguchi; Y. Kosaka Correlation betweentwo time-dependent dielectric breakdown measurements for the gate oxides damaged by plasma processing Correlation betweentwo time-dependent dielectric breakdown measurements for the gate oxides damaged by plasma processing Correlation betweentwo time-dependent dielectric breakdown measurements for the gate oxides damaged by plasma processing IEEE Transactions on Electron Devices, 45, 1, 160-164 IEEE Transactions on Electron Devices, 45, 1, 160-164 IEEE Transactions on Electron Devices, 45, 1, 160-164 1998 英語 公開
K. Eriguchi; M. Niwa K. Eriguchi; M. Niwa K. Eriguchi; M. Niwa Stress polarity dependence of the activation energy in time-dependent dielectric breakdown of thin gate oxides Stress polarity dependence of the activation energy in time-dependent dielectric breakdown of thin gate oxides Stress polarity dependence of the activation energy in time-dependent dielectric breakdown of thin gate oxides IEEE Electron Device Letters, 19, 11, 399-401 IEEE Electron Device Letters, 19, 11, 399-401 IEEE Electron Device Letters, 19, 11, 399-401 1998 英語 公開
Koji Eriguchi; Yoshinao Harada; Masaaki Niwa Koji Eriguchi; Yoshinao Harada; Masaaki Niwa Koji Eriguchi; Yoshinao Harada; Masaaki Niwa Influence of 1 nm-thick structural `strained-layer\\' near SiO<sub>2</sub>/Si interface on sub-4 nm-thick gate oxide reliability Influence of 1 nm-thick structural `strained-layer\\' near SiO<sub>2</sub>/Si interface on sub-4 nm-thick gate oxide reliability Influence of 1 nm-thick structural `strained-layer\\' near SiO<sub>2</sub>/Si interface on sub-4 nm-thick gate oxide reliability Technical Digest - International Electron Devices Meeting, 175-178 Technical Digest - International Electron Devices Meeting, 175-178 Technical Digest - International Electron Devices Meeting, 175-178 1998 英語 公開
Kyoko Egashira; Koji Eriguchi; Shin Hashimoto Kyoko Egashira; Koji Eriguchi; Shin Hashimoto Kyoko Egashira; Koji Eriguchi; Shin Hashimoto New evaluation method of plasma process-induced Si substrate damage by the voltage shift under constant current injection at metal/Si interface New evaluation method of plasma process-induced Si substrate damage by the voltage shift under constant current injection at metal/Si interface New evaluation method of plasma process-induced Si substrate damage by the voltage shift under constant current injection at metal/Si interface Technical Digest - International Electron Devices Meeting, 563-566 Technical Digest - International Electron Devices Meeting, 563-566 Technical Digest - International Electron Devices Meeting, 563-566 1998 英語 公開
M. Takase; K. Eriguchi; B. Mizuno M. Takase; K. Eriguchi; B. Mizuno M. Takase; K. Eriguchi; B. Mizuno Suppressing ion implantation induced oxide charging by utilizing physically damaged oxide region Suppressing ion implantation induced oxide charging by utilizing physically damaged oxide region Suppressing ion implantation induced oxide charging by utilizing physically damaged oxide region Jpn. J. Appl. Phys., 36, 3 SUPPL. B, 1618-1621 Jpn. J. Appl. Phys., 36, 3 SUPPL. B, 1618-1621 Jpn. J. Appl. Phys., 36, 3 SUPPL. B, 1618-1621 1997 英語 公開
K. Eriguchi; M. Niwa K. Eriguchi; M. Niwa K. Eriguchi; M. Niwa Correlation between lifetime, temperature, and electrical stress for gate oxide lifetime testing Correlation between lifetime, temperature, and electrical stress for gate oxide lifetime testing Correlation between lifetime, temperature, and electrical stress for gate oxide lifetime testing IEEE Electron Device Letters, 18, 12, 577-579 IEEE Electron Device Letters, 18, 12, 577-579 IEEE Electron Device Letters, 18, 12, 577-579 1997 英語 公開
K. Eriguchi; Y. Uraoka K. Eriguchi; Y. Uraoka K. Eriguchi; Y. Uraoka Correlating charge-to-breakdown with constant-current injection to gate oxide lifetime under constant-voltage stress Correlating charge-to-breakdown with constant-current injection to gate oxide lifetime under constant-voltage stress Correlating charge-to-breakdown with constant-current injection to gate oxide lifetime under constant-voltage stress Jpn. J. Appl. Phys., 35, 2 SUPPL. B, 1535-1539 Jpn. J. Appl. Phys., 35, 2 SUPPL. B, 1535-1539 Jpn. J. Appl. Phys., 35, 2 SUPPL. B, 1535-1539 1996 英語 公開
Takayuki Yamada; Koji Eriguchi; Yukiko Kosaka; Kenzo Hatada Takayuki Yamada; Koji Eriguchi; Yukiko Kosaka; Kenzo Hatada Takayuki Yamada; Koji Eriguchi; Yukiko Kosaka; Kenzo Hatada Impacts of antenna layout enhanced charging damage on MOSFET reliability and performance Impacts of antenna layout enhanced charging damage on MOSFET reliability and performance Impacts of antenna layout enhanced charging damage on MOSFET reliability and performance Technical Digest - International Electron Devices Meeting, 727-730 Technical Digest - International Electron Devices Meeting, 727-730 Technical Digest - International Electron Devices Meeting, 727-730 1996 英語 公開
Koji Eriguchi; Yukiharu Uraoka Koji Eriguchi; Yukiharu Uraoka Koji Eriguchi; Yukiharu Uraoka New method for lifetime evaluation of gate oxide damaged by plasma processing New method for lifetime evaluation of gate oxide damaged by plasma processing New method for lifetime evaluation of gate oxide damaged by plasma processing IEEE Electron Device Letters, 16, 5, 187-189 IEEE Electron Device Letters, 16, 5, 187-189 IEEE Electron Device Letters, 16, 5, 187-189 1995 英語 公開
Koji Eriguchi; Masatoshi Arai; Yukiharu Uraoka; Masafumi Kubota Koji Eriguchi; Masatoshi Arai; Yukiharu Uraoka; Masafumi Kubota Koji Eriguchi; Masatoshi Arai; Yukiharu Uraoka; Masafumi Kubota Plasma-induced transconductance degradation of nMOSFET with thin gate oxide Plasma-induced transconductance degradation of nMOSFET with thin gate oxide Plasma-induced transconductance degradation of nMOSFET with thin gate oxide IEICE Transactions on Electronics, E78-C, 3, 261-266 IEICE Transactions on Electronics, E78-C, 3, 261-266 IEICE Transactions on Electronics, E78-C, 3, 261-266 1995 英語 公開
K. Eriguchi; Y. Uraoka; S. Odanaka K. Eriguchi; Y. Uraoka; S. Odanaka K. Eriguchi; Y. Uraoka; S. Odanaka New gate oxide lifetime prediction method using cumulative damage law and its applications to plasma-damaged oxides New gate oxide lifetime prediction method using cumulative damage law and its applications to plasma-damaged oxides New gate oxide lifetime prediction method using cumulative damage law and its applications to plasma-damaged oxides Technical Digest - International Electron Devices Meeting, 323-326 Technical Digest - International Electron Devices Meeting, 323-326 Technical Digest - International Electron Devices Meeting, 323-326 1995 英語 公開
Y. Uraoka; K. Eriguchi; T. Tamaki; K. Tsuji Y. Uraoka; K. Eriguchi; T. Tamaki; K. Tsuji Y. Uraoka; K. Eriguchi; T. Tamaki; K. Tsuji Evaluation of Gate Oxide Damage by Plasma Process Evaluation of Gate Oxide Damage by Plasma Process Evaluation of Gate Oxide Damage by Plasma Process IEICE Trans. Electron., E77-C, 453-458 IEICE Trans. Electron., E77-C, 453-458 IEICE Trans. Electron., E77-C, 453-458 1994 英語 公開
Koji Eriguchi; Yukiharu Uraoka; Hideo Nakagawa; Tokuhiko Tamaki; Masafumi Kubota; Noboru Nomura Koji Eriguchi; Yukiharu Uraoka; Hideo Nakagawa; Tokuhiko Tamaki; Masafumi Kubota; Noboru Nomura Koji Eriguchi; Yukiharu Uraoka; Hideo Nakagawa; Tokuhiko Tamaki; Masafumi Kubota; Noboru Nomura Quantitative evaluation of gate oxide damage plasma processing using antenna-structure capacitors Quantitative evaluation of gate oxide damage plasma processing using antenna-structure capacitors Quantitative evaluation of gate oxide damage plasma processing using antenna-structure capacitors Jpn. J. Appl. Phys., 33, 1 A, 83-87 Jpn. J. Appl. Phys., 33, 1 A, 83-87 Jpn. J. Appl. Phys., 33, 1 A, 83-87 1994 英語 公開
Yukiharu Uraoka; Koji Eriguchi; Tokuhiko Tamaki; Kazuhiko Tsuji Yukiharu Uraoka; Koji Eriguchi; Tokuhiko Tamaki; Kazuhiko Tsuji Yukiharu Uraoka; Koji Eriguchi; Tokuhiko Tamaki; Kazuhiko Tsuji Evaluation technique of gate oxide damage Evaluation technique of gate oxide damage Evaluation technique of gate oxide damage IEEE Transactions on Semiconductor Manufacturing, 7, 3, 293-297 IEEE Transactions on Semiconductor Manufacturing, 7, 3, 293-297 IEEE Transactions on Semiconductor Manufacturing, 7, 3, 293-297 1994 英語 公開
K. Sawada; K. Eriguchi; T. Fujimoto K. Sawada; K. Eriguchi; T. Fujimoto K. Sawada; K. Eriguchi; T. Fujimoto Hydrogen-atom spectroscopy of the ionizing plasma containing molecular hydrogen: Line intensities and ionization rate Hydrogen-atom spectroscopy of the ionizing plasma containing molecular hydrogen: Line intensities and ionization rate Hydrogen-atom spectroscopy of the ionizing plasma containing molecular hydrogen: Line intensities and ionization rate Journal of Applied Physics, 73, 12, 8122-8125 Journal of Applied Physics, 73, 12, 8122-8125 Journal of Applied Physics, 73, 12, 8122-8125 1993 英語 公開
T. Tamaki; M. Ohkuni; S. Sivaram; K. Eriguchi; I. Nakayama; M. Lubota; N. Momura T. Tamaki; M. Ohkuni; S. Sivaram; K. Eriguchi; I. Nakayama; M. Lubota; N. Momura T. Tamaki; M. Ohkuni; S. Sivaram; K. Eriguchi; I. Nakayama; M. Lubota; N. Momura Damage-free metal etching using Lissajous electron plasma Damage-free metal etching using Lissajous electron plasma Damage-free metal etching using Lissajous electron plasma Technical Digest - International Electron Devices Meeting, 661-664 Technical Digest - International Electron Devices Meeting, 661-664 Technical Digest - International Electron Devices Meeting, 661-664 1993 英語 公開
T. Fujimoto; K. Sawada; K. Takahata; K. Eriguchi; H. Suemitsu; K. Ishii; R. Okasaka; H. Tanaka; T. Maekawa; Y. Terumichi; S. Tanaka T. Fujimoto; K. Sawada; K. Takahata; K. Eriguchi; H. Suemitsu; K. Ishii; R. Okasaka; H. Tanaka; T. Maekawa; Y. Terumichi; S. Tanaka T. Fujimoto; K. Sawada; K. Takahata; K. Eriguchi; H. Suemitsu; K. Ishii; R. Okasaka; H. Tanaka; T. Maekawa; Y. Terumichi; S. Tanaka Spectroscopic determination of hydrogen and electron densities in plasma in the ionizing phase: Application to WT-III Spectroscopic determination of hydrogen and electron densities in plasma in the ionizing phase: Application to WT-III Spectroscopic determination of hydrogen and electron densities in plasma in the ionizing phase: Application to WT-III Nucl. Fusion Lett., 29, 1519-1521 Nucl. Fusion Lett., 29, 1519-1521 Nucl. Fusion Lett., 29, 1519-1521 1989 英語 公開

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著者 著者(日本語) 著者(英語) タイトル タイトル(日本語) タイトル(英語) 書誌情報等 書誌情報等(日本語) 書誌情報等(英語) 出版年月 査読の有無 記述言語 掲載種別 公開
江利口 浩二 江利口 浩二 Y. Sato, S. Shibata, R. Sakaida, and K. Eriguchi Characterization of Residual Defects in Plasma-exposed Si Substrates using Cathodoluminescence and Positron Annihilation Spectroscopy Characterization of Residual Defects in Plasma-exposed Si Substrates using Cathodoluminescence and Positron Annihilation Spectroscopy Characterization of Residual Defects in Plasma-exposed Si Substrates using Cathodoluminescence and Positron Annihilation Spectroscopy 17th International Workshop on Junction Technology 2017, 73-76 17th International Workshop on Junction Technology 2017, 73-76 17th International Workshop on Junction Technology 2017, 73-76 2017/06 英語 研究論文 公開
江利口 浩二 江利口 浩二 M. Noma, K. Eriguchi, M. Yamashita, and S. Hasegawa Coatings of Boron Nitride Films for Vacuum Tribology by Reactive Plasma Assisted Coating (RePAC) Technology—Friction coefficient lowering under vacuum— Coatings of Boron Nitride Films for Vacuum Tribology by Reactive Plasma Assisted Coating (RePAC) Technology—Friction coefficient lowering under vacuum— Coatings of Boron Nitride Films for Vacuum Tribology by Reactive Plasma Assisted Coating (RePAC) Technology—Friction coefficient lowering under vacuum— 7th Tsukuba International Coating Symposium (TICS7), 26-27 7th Tsukuba International Coating Symposium (TICS7), 26-27 7th Tsukuba International Coating Symposium (TICS7), 26-27 2016/12 英語 研究論文 公開
江利口 浩二 江利口 浩二 Z. Wei, Y. Katoh, S.Ogasahara, Y. Yoshimoto, K. Kawai, Y. Ikeda, K. Eriguchi, K.Ohmori, and S. Yoneda True Random Number Generator using Current Difference based on a Fractional Stochastic Model in 40-nm Embedded ReRAM True Random Number Generator using Current Difference based on a Fractional Stochastic Model in 40-nm Embedded ReRAM True Random Number Generator using Current Difference based on a Fractional Stochastic Model in 40-nm Embedded ReRAM IEEE International Electron Device Meeting (IEDM) 2016, 107-110 IEEE International Electron Device Meeting (IEDM) 2016, 107-110 IEEE International Electron Device Meeting (IEDM) 2016, 107-110 2016/12 英語 研究論文 公開
江利口 浩二 江利口 浩二 Kentaro Nishida, Kouichi Ono, and Koji Eriguchi An optical model for in-line analysis of plasma-induced interlayer dielectric damage An optical model for in-line analysis of plasma-induced interlayer dielectric damage An optical model for in-line analysis of plasma-induced interlayer dielectric damage 38th International Symposium on Dry Process, 81-82 38th International Symposium on Dry Process, 81-82 38th International Symposium on Dry Process, 81-82 2016/11 英語 研究論文 公開
江利口 浩二 江利口 浩二 Yukimasa Okada, Kouichi Ono, and Koji Eriguchi A new damage evaluation scheme predicting the nature of defects-an advanced capacitance-voltage technique A new damage evaluation scheme predicting the nature of defects-an advanced capacitance-voltage technique A new damage evaluation scheme predicting the nature of defects-an advanced capacitance-voltage technique 38th International Symposium on Dry Process, 23-24 38th International Symposium on Dry Process, 23-24 38th International Symposium on Dry Process, 23-24 2016/11 英語 研究論文 公開
江利口 浩二 江利口 浩二 M. Noma, M. Yamashita, K. Eriguchi, and S. Hasegawa Formation of superhard c-BN films on the body and edge of cutting tools by reactive plasma-assisted coating (RePAC) Formation of superhard c-BN films on the body and edge of cutting tools by reactive plasma-assisted coating (RePAC) Formation of superhard c-BN films on the body and edge of cutting tools by reactive plasma-assisted coating (RePAC) The 16th International Conference on Precision Engineering, 941-8147 The 16th International Conference on Precision Engineering, 941-8147 The 16th International Conference on Precision Engineering, 941-8147 2016/11 英語 総説・解説(国際会議プロシーディングス) 公開
江利口 浩二 江利口 浩二 Tomoya Higuchi, Yukimasa Okada, Kouichi Ono, and Koji Eriguchi Defect profiling of plasma-damaged layer by surface-controlled photoreflectance spectroscopy Defect profiling of plasma-damaged layer by surface-controlled photoreflectance spectroscopy Defect profiling of plasma-damaged layer by surface-controlled photoreflectance spectroscopy 38th International Symposium on Dry Process, 83-84 38th International Symposium on Dry Process, 83-84 38th International Symposium on Dry Process, 83-84 2016/11 英語 研究論文 公開
江利口 浩二 江利口 浩二 Kengo Shinohara, Kentaro Nishida, Kouichi Ono, and Koji Eriguchi Effects of plasma exposure on leakage and reliability parameters of dielectric film: New measures of damage? Effects of plasma exposure on leakage and reliability parameters of dielectric film: New measures of damage? Effects of plasma exposure on leakage and reliability parameters of dielectric film: New measures of damage? 38th International Symposium on Dry Process, 27-28 38th International Symposium on Dry Process, 27-28 38th International Symposium on Dry Process, 27-28 2016/11 英語 研究論文 公開
Z. Wei, K. Eriguchi, S. Muraoka, K. Katayama, R. Yasuhara, K. Kawai, Y. Ikeda, M. Yoshimura, Y. Hayakawa, K. Shimakawa, T. Mikawa, S. Yoneda Z. Wei, K. Eriguchi, S. Muraoka, K. Katayama, R. Yasuhara, K. Kawai, Y. Ikeda, M. Yoshimura, Y. Hayakawa, K. Shimakawa, T. Mikawa, S. Yoneda Distribution Projecting the Reliability for 40 nm ReRAM and beyond based on Stochastic Differential Equation Distribution Projecting the Reliability for 40 nm ReRAM and beyond based on Stochastic Differential Equation Distribution Projecting the Reliability for 40 nm ReRAM and beyond based on Stochastic Differential Equation IEEE Tech. Dig. of Int. Electron Device Meet. (IEDM), 177-180 IEEE Tech. Dig. of Int. Electron Device Meet. (IEDM), 177-180 IEEE Tech. Dig. of Int. Electron Device Meet. (IEDM), 177-180 2015/12 英語 総説・解説(国際会議プロシーディングス) 公開
K. Nishida, Y. Okada, Y. Takao, K. Eriguchi, K. Ono K. Nishida, Y. Okada, Y. Takao, K. Eriguchi, K. Ono A new evaluation method to characterize low-k dielectric damage during plasma processing A new evaluation method to characterize low-k dielectric damage during plasma processing A new evaluation method to characterize low-k dielectric damage during plasma processing Proc. 37th International Symposium on Dry Process (DPS), 213-214 Proc. 37th International Symposium on Dry Process (DPS), 213-214 Proc. 37th International Symposium on Dry Process (DPS), 213-214 2015/11 英語 総説・解説(国際会議プロシーディングス) 公開
江利口 浩二 江利口 浩二 Y. Okada, K. Eriguchi, K. Ono Surface orientation dependence of plasma-induced ion bombardment damage in Si substrate Surface orientation dependence of plasma-induced ion bombardment damage in Si substrate Surface orientation dependence of plasma-induced ion bombardment damage in Si substrate Proc. 37th International Symposium on Dry Process (DPS), 211-212 Proc. 37th International Symposium on Dry Process (DPS), 211-212 Proc. 37th International Symposium on Dry Process (DPS), 211-212 2015/11 英語 総説・解説(国際会議プロシーディングス) 公開
C. Takeshita, I. Yamada, Y. Hirano, K. Nishimura, Y. Takao, K. Eriguchi, K. Ono C. Takeshita, I. Yamada, Y. Hirano, K. Nishimura, Y. Takao, K. Eriguchi, K. Ono Silicon Nanowire Groeth on Si and SiO2 Substrate by Plasma Sputtering Silicon Nanowire Groeth on Si and SiO2 Substrate by Plasma Sputtering Silicon Nanowire Groeth on Si and SiO2 Substrate by Plasma Sputtering Proc. 37th International Symposium on Dry Process (DPS), 139-140 Proc. 37th International Symposium on Dry Process (DPS), 139-140 Proc. 37th International Symposium on Dry Process (DPS), 139-140 2015/11 英語 総説・解説(国際会議プロシーディングス) 公開
N. Nakazaki, H. Matsumoto, S. Sonobe, Y. Takao, K. Eriguchi, K. Ono N. Nakazaki, H. Matsumoto, S. Sonobe, Y. Takao, K. Eriguchi, K. Ono Experimental demonstration of oblique ion incidence with sheath control plates during plasma etching of silicon Experimental demonstration of oblique ion incidence with sheath control plates during plasma etching of silicon Experimental demonstration of oblique ion incidence with sheath control plates during plasma etching of silicon Proc. 37th International Symposium on Dry Process (DPS), 13-14 Proc. 37th International Symposium on Dry Process (DPS), 13-14 Proc. 37th International Symposium on Dry Process (DPS), 13-14 2015/11 英語 総説・解説(国際会議プロシーディングス) 公開
K. Eriguchi, M. Kamei, Y. Nakakubo, K. Ono K. Eriguchi, M. Kamei, Y. Nakakubo, K. Ono Role of Plasma Density in Damage Characterization and its Impact on Low-Damage Plasma Process Design Role of Plasma Density in Damage Characterization and its Impact on Low-Damage Plasma Process Design Role of Plasma Density in Damage Characterization and its Impact on Low-Damage Plasma Process Design AVS 62nd International Symposium & Exhibition, PS+AS+SS-WeA-10 AVS 62nd International Symposium & Exhibition, PS+AS+SS-WeA-10 AVS 62nd International Symposium & Exhibition, PS+AS+SS-WeA-10 2015/10 英語 研究発表要旨(国際会議) 公開
T. Ikeda, A. Tanihara, N. Yamamoto, S. Kasai, K. Eriguchi, K. Ono T. Ikeda, A. Tanihara, N. Yamamoto, S. Kasai, K. Eriguchi, K. Ono Plasma-induced photon irradiation damage on low-k dielectrics enhanced by Cu-line layout Plasma-induced photon irradiation damage on low-k dielectrics enhanced by Cu-line layout Plasma-induced photon irradiation damage on low-k dielectrics enhanced by Cu-line layout IEEE Proc. Int. Conf. on Integrated Circuit Design & Technol. (ICICDT) IEEE Proc. Int. Conf. on Integrated Circuit Design & Technol. (ICICDT) IEEE Proc. Int. Conf. on Integrated Circuit Design & Technol. (ICICDT) 2015/05 英語 公開
江利口 浩二 江利口 浩二 Y. Okada, K. Eriguchi, and K. Ono Surface Orientation Dependence of Ion Bombardment Damage during Plasma Processing Surface Orientation Dependence of Ion Bombardment Damage during Plasma Processing Surface Orientation Dependence of Ion Bombardment Damage during Plasma Processing IEEE Proc. Int. Conf. on Integrated Circuit Design & Technol. (ICICDT) IEEE Proc. Int. Conf. on Integrated Circuit Design & Technol. (ICICDT) IEEE Proc. Int. Conf. on Integrated Circuit Design & Technol. (ICICDT) 2015/05 英語 公開
Z. Wei, K. Eriguchi, K. Katayama, S. Muraoka, R. Yasuhara, T. Mikawa Z. Wei, K. Eriguchi, K. Katayama, S. Muraoka, R. Yasuhara, T. Mikawa Z. Wei, K. Eriguchi, K. Katayama, S. Muraoka, R. Yasuhara, T. Mikawa A New Prediction Method for ReRAM Data Retention Statistics based on 3D Filament Structures A New Prediction Method for ReRAM Data Retention Statistics based on 3D Filament Structures A New Prediction Method for ReRAM Data Retention Statistics based on 3D Filament Structures Proc. of Int. Reliability Physics Symp (IRPS), 5B.4.1-5B.4.4 Proc. of Int. Reliability Physics Symp (IRPS), 5B.4.1-5B.4.4 Proc. of Int. Reliability Physics Symp (IRPS), 5B.4.1-5B.4.4 2015/04 英語 公開
江利口 浩二 江利口 浩二 M. Noma, K. Eriguchi, S. Hasegawa, M. Yamashita, K. Ono Effects of ion energy on surface and mechanical properties of BN films formed by a reactive plasma-assisted coating method Effects of ion energy on surface and mechanical properties of BN films formed by a reactive plasma-assisted coating method Effects of ion energy on surface and mechanical properties of BN films formed by a reactive plasma-assisted coating method Proc. 36th International Symposium on Dry Process (DPS), 51-52 Proc. 36th International Symposium on Dry Process (DPS), 51-52 Proc. 36th International Symposium on Dry Process (DPS), 51-52 2014/11 英語 公開
江利口 浩二 江利口 浩二 K. Eriguchi, M. Noma, S. Hasegawa, M. Yamashita, and K. Ono A Novel Reactive Plasma-Assisted Coating Technique (RePAC) for Thin BN/Crystalline-Si Structures and their Mechanical and Electrical Properties A Novel Reactive Plasma-Assisted Coating Technique (RePAC) for Thin BN/Crystalline-Si Structures and their Mechanical and Electrical Properties A Novel Reactive Plasma-Assisted Coating Technique (RePAC) for Thin BN/Crystalline-Si Structures and their Mechanical and Electrical Properties the AVS 61st International Symposium & Exhibition, SE+NS+TR-TuM3 the AVS 61st International Symposium & Exhibition, SE+NS+TR-TuM3 the AVS 61st International Symposium & Exhibition, SE+NS+TR-TuM3 2014/11 英語 公開
江利口 浩二 江利口 浩二 K. Eriguchi, K. Ono A model for plasma-induced latent defects in three-dimensional structures and its application to parameter variation analysis of FinFETs A model for plasma-induced latent defects in three-dimensional structures and its application to parameter variation analysis of FinFETs A model for plasma-induced latent defects in three-dimensional structures and its application to parameter variation analysis of FinFETs Proc. 36th International Symposium on Dry Process (DPS), 19-30 Proc. 36th International Symposium on Dry Process (DPS), 19-30 Proc. 36th International Symposium on Dry Process (DPS), 19-30 2014/11 英語 公開
江利口 浩二 江利口 浩二 M. Fukasawa, K. Eriguchi, K. Nagahata, K. Ono, T. Tatsumi Systematic comparison of various analytical techniques for evaluating plasma-induced damage recovery Systematic comparison of various analytical techniques for evaluating plasma-induced damage recovery Systematic comparison of various analytical techniques for evaluating plasma-induced damage recovery Proc. 36th International Symposium on Dry Process (DPS), 133-134 Proc. 36th International Symposium on Dry Process (DPS), 133-134 Proc. 36th International Symposium on Dry Process (DPS), 133-134 2014/11 英語 公開
T. Iwai, K. Eriguchi, S. Yamauchi, N. Noro, J. Kitagawa, K. Ono T. Iwai, K. Eriguchi, S. Yamauchi, N. Noro, J. Kitagawa, K. Ono T. Iwai, K. Eriguchi, S. Yamauchi, N. Noro, J. Kitagawa, K. Ono Low-temperature microwave repairing for plasma-induced local defect structures near Si substrate surface Low-temperature microwave repairing for plasma-induced local defect structures near Si substrate surface Low-temperature microwave repairing for plasma-induced local defect structures near Si substrate surface Proc. 36th International Symposium on Dry Process (DPS), 135-136 Proc. 36th International Symposium on Dry Process (DPS), 135-136 Proc. 36th International Symposium on Dry Process (DPS), 135-136 2014/11 英語 公開
江利口 浩二 江利口 浩二 T. Ikeda, K. Eriguchi, A. Tanihara, S. Kasai, K. Ono Experimental evidence of layout-dependent low-k damage during plasma processing - Role of "near-field" in damage creation - Experimental evidence of layout-dependent low-k damage during plasma processing - Role of "near-field" in damage creation - Experimental evidence of layout-dependent low-k damage during plasma processing - Role of "near-field" in damage creation - Proc. 36th International Symposium on Dry Process (DPS), 131-132 Proc. 36th International Symposium on Dry Process (DPS), 131-132 Proc. 36th International Symposium on Dry Process (DPS), 131-132 2014/11 英語 公開
M. Kamei, Y. Takao, K. Eriguchi, K. Ono M. Kamei, Y. Takao, K. Eriguchi, K. Ono M. Kamei, Y. Takao, K. Eriguchi, K. Ono TDDB Lifetime Enhancement of High-k MOSFETs Damaged by Plasma Processing – Conflicting Results in Plasma Charging Damage Evaluation TDDB Lifetime Enhancement of High-k MOSFETs Damaged by Plasma Processing – Conflicting Results in Plasma Charging Damage Evaluation TDDB Lifetime Enhancement of High-k MOSFETs Damaged by Plasma Processing – Conflicting Results in Plasma Charging Damage Evaluation IEEE International Integrated Reliability Workshop (IIRW), 6.1 IEEE International Integrated Reliability Workshop (IIRW), 6.1 IEEE International Integrated Reliability Workshop (IIRW), 6.1 2014/10 英語 公開
江利口 浩二 江利口 浩二 K. Eriguchi, Y. Takao, and K. Ono A New Aspect of Plasma‐Induced Physical Damage in Three‐Dimensional Scaled Structures A New Aspect of Plasma‐Induced Physical Damage in Three‐Dimensional Scaled Structures A New Aspect of Plasma‐Induced Physical Damage in Three‐Dimensional Scaled Structures IEEE Proc. Int. Conf. on Integrated Circuit Design & Technol. (ICICDT), 1-4 IEEE Proc. Int. Conf. on Integrated Circuit Design & Technol. (ICICDT), 1-4 IEEE Proc. Int. Conf. on Integrated Circuit Design & Technol. (ICICDT), 1-4 2014/05 英語 公開
江利口 浩二 江利口 浩二 M. Kamei, Y. Takao, K. Eriguchi, and K. Ono Random Telegraph Noise as a New Measure of Plasma‐Induced Charging Damage in MOSFETs Random Telegraph Noise as a New Measure of Plasma‐Induced Charging Damage in MOSFETs Random Telegraph Noise as a New Measure of Plasma‐Induced Charging Damage in MOSFETs IEEE Proc. Int. Conf. on Integrated Circuit Design & Technol. (ICICDT), 1-4 IEEE Proc. Int. Conf. on Integrated Circuit Design & Technol. (ICICDT), 1-4 IEEE Proc. Int. Conf. on Integrated Circuit Design & Technol. (ICICDT), 1-4 2014/05 英語 公開
江利口 浩二 江利口 浩二 K. Eriguchi, Y. Takao, and K. Ono Plasma-Induced Damage in 3D Structures behind Device Scaling Plasma-Induced Damage in 3D Structures behind Device Scaling Plasma-Induced Damage in 3D Structures behind Device Scaling Plasma Etch and Strip in Microtechnology (PESM) Plasma Etch and Strip in Microtechnology (PESM) Plasma Etch and Strip in Microtechnology (PESM) 2014/05 英語 公開
江利口 浩二 江利口 浩二 M. Noma, K. Eriguchi, S. Hasegawa, M.Yamashita, Y. Takao, N. Terayama, and K. Ono Effects of ion-bombardment damage on mechanical properties of c-BN thin films formed by a magnetically-enhanced plasma ion plating method Effects of ion-bombardment damage on mechanical properties of c-BN thin films formed by a magnetically-enhanced plasma ion plating method Effects of ion-bombardment damage on mechanical properties of c-BN thin films formed by a magnetically-enhanced plasma ion plating method 6th Int. Symp. Adv. Plasma Sci. and its Application for Nitrides and Nanomaterials / 7th Int. Conf. on Plasma Nano-Technol. & Sci., 05pP48 6th Int. Symp. Adv. Plasma Sci. and its Application for Nitrides and Nanomaterials / 7th Int. Conf. on Plasma Nano-Technol. & Sci., 05pP48 6th Int. Symp. Adv. Plasma Sci. and its Application for Nitrides and Nanomaterials / 7th Int. Conf. on Plasma Nano-Technol. & Sci., 05pP48 2014/03 英語 公開
M. Noma, K. Eriguchi, S. Hasegawa, M.Yamashita, Y. Takao, N. Terayama, and K. Ono M. Noma, K. Eriguchi, S. Hasegawa, M.Yamashita, Y. Takao, N. Terayama, and K. Ono M. Noma, K. Eriguchi, S. Hasegawa, M.Yamashita, Y. Takao, N. Terayama, and K. Ono Impacts of plasma process parameters on mechanical properties of c-BN thin-films Impacts of plasma process parameters on mechanical properties of c-BN thin-films Impacts of plasma process parameters on mechanical properties of c-BN thin-films The 8th Int. Conf. Reactive Plasmas / 31st Symp. Plasma Processing, 5B-AM-O2 The 8th Int. Conf. Reactive Plasmas / 31st Symp. Plasma Processing, 5B-AM-O2 The 8th Int. Conf. Reactive Plasmas / 31st Symp. Plasma Processing, 5B-AM-O2 2014/02 公開
N. Nakazaki, Y. Takao, K. Eriguchi, K. Ono N. Nakazaki, Y. Takao, K. Eriguchi, K. Ono Surface roughening during Si etching in inductively coupled Cl2 plasmas Surface roughening during Si etching in inductively coupled Cl2 plasmas Surface roughening during Si etching in inductively coupled Cl2 plasmas The 8th Int. Conf. Reactive Plasmas / 31st Symp. Plasma Processing, 4B-PM-O2 The 8th Int. Conf. Reactive Plasmas / 31st Symp. Plasma Processing, 4B-PM-O2 The 8th Int. Conf. Reactive Plasmas / 31st Symp. Plasma Processing, 4B-PM-O2 2014/02 英語 公開
N. Nakazaki, Y. Takao, K. Eriguchi, K. Ono N. Nakazaki, Y. Takao, K. Eriguchi, K. Ono Molecular dynamics analysis of Si etching in HBr-based plasmas: Effects of neutral radicals Molecular dynamics analysis of Si etching in HBr-based plasmas: Effects of neutral radicals Molecular dynamics analysis of Si etching in HBr-based plasmas: Effects of neutral radicals Proc. 35th International Symposium on Dry Process (DPS), 159-160 Proc. 35th International Symposium on Dry Process (DPS), 159-160 Proc. 35th International Symposium on Dry Process (DPS), 159-160 2013/11 英語 公開
江利口 浩二 江利口 浩二 T. Okumura, K. Eriguchi, M. Saitoh, and H. Kawaura Recovery of Plasma-Induced Si Substrate Damage Using Atmospheric Thermal Plasma Recovery of Plasma-Induced Si Substrate Damage Using Atmospheric Thermal Plasma Recovery of Plasma-Induced Si Substrate Damage Using Atmospheric Thermal Plasma Proc. 35th International Symposium on Dry Process (DPS), pp. 41-42 Proc. 35th International Symposium on Dry Process (DPS), pp. 41-42 Proc. 35th International Symposium on Dry Process (DPS), pp. 41-42 2013/08 英語 公開
江利口 浩二 江利口 浩二 M. Noma, K. Eriguchi, Y. Takao, N. Terayama, and K. Ono Improved hardness and electrical property of c-BN thin films by magnetically enhanced plasma ion plating technique Improved hardness and electrical property of c-BN thin films by magnetically enhanced plasma ion plating technique Improved hardness and electrical property of c-BN thin films by magnetically enhanced plasma ion plating technique Proc. 35th International Symposium on Dry Process (DPS), pp. 39-40 Proc. 35th International Symposium on Dry Process (DPS), pp. 39-40 Proc. 35th International Symposium on Dry Process (DPS), pp. 39-40 2013/08 英語 公開
江利口 浩二 江利口 浩二 A. Matsuda, Y. Nakakubo, Y. Takao, K. Eriguchi, and K. Ono micro-Photoreflectance spectroscopy for microscale monitoring of plasma-induced physical damage micro-Photoreflectance spectroscopy for microscale monitoring of plasma-induced physical damage micro-Photoreflectance spectroscopy for microscale monitoring of plasma-induced physical damage Proc. 35th International Symposium on Dry Process (DPS), pp. 9-10 Proc. 35th International Symposium on Dry Process (DPS), pp. 9-10 Proc. 35th International Symposium on Dry Process (DPS), pp. 9-10 2013/08 英語 公開
江利口 浩二 江利口 浩二 M. Fukasawa, A. Matsuda, Y. Nakakubo, S. Sugimura, K. Nagahata, Y. Takao, K. Eriguchi, K. Ono, and T. Tatsumi Comprehensive Evidence-based Guidelines for Annealing Plasma-damaged Si Substrates - Impact of plasma process conditions - Comprehensive Evidence-based Guidelines for Annealing Plasma-damaged Si Substrates - Impact of plasma process conditions - Comprehensive Evidence-based Guidelines for Annealing Plasma-damaged Si Substrates - Impact of plasma process conditions - Proc. 35th International Symposium on Dry Process (DPS), pp. 183-184 Proc. 35th International Symposium on Dry Process (DPS), pp. 183-184 Proc. 35th International Symposium on Dry Process (DPS), pp. 183-184 2013/08 英語 公開
江利口 浩二 江利口 浩二 K. Eriguchi, A. Matsuda, Y. Takao, and K. Ono Scenario of plasma-induced physical damage in FinFET – the effects of "straggling" of incident ions by a range theory – Scenario of plasma-induced physical damage in FinFET – the effects of "straggling" of incident ions by a range theory – Scenario of plasma-induced physical damage in FinFET – the effects of "straggling" of incident ions by a range theory – Proc. 35th International Symposium on Dry Process (DPS), pp. 181-182 Proc. 35th International Symposium on Dry Process (DPS), pp. 181-182 Proc. 35th International Symposium on Dry Process (DPS), pp. 181-182 2013/08 英語 公開
江利口 浩二 江利口 浩二 M. Kamei, Y. Takao, K. Eriguchi, and K. Ono Impacts of Plasma-induced Charging Damage on Random Telegraph Noise (RTN) Behaviors in MOSFETs with SiO2 and High-k Gate Dielectrics Impacts of Plasma-induced Charging Damage on Random Telegraph Noise (RTN) Behaviors in MOSFETs with SiO2 and High-k Gate Dielectrics Impacts of Plasma-induced Charging Damage on Random Telegraph Noise (RTN) Behaviors in MOSFETs with SiO2 and High-k Gate Dielectrics Proc. 35th International Symposium on Dry Process (DPS), pp. 185-186 Proc. 35th International Symposium on Dry Process (DPS), pp. 185-186 Proc. 35th International Symposium on Dry Process (DPS), pp. 185-186 2013/08 英語 公開
A. Matsuda; Y. Nakakubo; Y. Takao; K. Eriguchi; K. Ono A. Matsuda; Y. Nakakubo; Y. Takao; K. Eriguchi; K. Ono A. Matsuda; Y. Nakakubo; Y. Takao; K. Eriguchi; K. Ono Atomistic simulations of plasma process-induced Si substrate damage - Effects of substrate bias-power frequency Atomistic simulations of plasma process-induced Si substrate damage - Effects of substrate bias-power frequency Atomistic simulations of plasma process-induced Si substrate damage - Effects of substrate bias-power frequency ICICDT 2013 - International Conference on IC Design and Technology, Proceedings, 191-194 ICICDT 2013 - International Conference on IC Design and Technology, Proceedings, 191-194 ICICDT 2013 - International Conference on IC Design and Technology, Proceedings, 191-194 2013 英語 公開
N. Nakazaki, H. Tsuda, Y. Takao, K. Eriguchi, K. Ono N. Nakazaki, H. Tsuda, Y. Takao, K. Eriguchi, K. Ono Molecular Dynamics Analysis of Surface Structure and Etch Products in Si/Cl and Si/Br Systems Molecular Dynamics Analysis of Surface Structure and Etch Products in Si/Cl and Si/Br Systems Molecular Dynamics Analysis of Surface Structure and Etch Products in Si/Cl and Si/Br Systems Proc. 34th International Symposium on Dry Process (DPS), 91-92 Proc. 34th International Symposium on Dry Process (DPS), 91-92 Proc. 34th International Symposium on Dry Process (DPS), 91-92 2012/11 英語 公開
H. Tsuda, Y. Takao, K. Eriguchi, K. Ono H. Tsuda, Y. Takao, K. Eriguchi, K. Ono Modeling and Simulation of Nanoscale Surface Roughness during Plasma Etching of Si: Mechanism and Reduction Modeling and Simulation of Nanoscale Surface Roughness during Plasma Etching of Si: Mechanism and Reduction Modeling and Simulation of Nanoscale Surface Roughness during Plasma Etching of Si: Mechanism and Reduction Proc. 34th International Symposium on Dry Process (DPS), 7-8 Proc. 34th International Symposium on Dry Process (DPS), 7-8 Proc. 34th International Symposium on Dry Process (DPS), 7-8 2012/11 英語 公開
Takao, Yoshinori; Sakamoto, Masataka; Eriguchi, Koji; Ono, Kouichi Takao, Yoshinori; Sakamoto, Masataka; Eriguchi, Koji; Ono, Kouichi Takao, Yoshinori; Sakamoto, Masataka; Eriguchi, Koji; Ono, Kouichi Particle simulation of a micro inductively coupled plasma source including an external circuit Particle simulation of a micro inductively coupled plasma source including an external circuit Particle simulation of a micro inductively coupled plasma source including an external circuit Bulletin of the American Physical Society,57 (8), p. 77 Bulletin of the American Physical Society,57 (8), p. 77 Bulletin of the American Physical Society,57 (8), p. 77 2012/10 英語 公開
Mori, Daisuke; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi Mori, Daisuke; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi Mori, Daisuke; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi Microwave-Excited Microplasma Thrusters Using Surface Wave and Electron Cyclotron Resonance Discharges Microwave-Excited Microplasma Thrusters Using Surface Wave and Electron Cyclotron Resonance Discharges Microwave-Excited Microplasma Thrusters Using Surface Wave and Electron Cyclotron Resonance Discharges Bulletin of the American Physical Society,57 (8), p. 22 Bulletin of the American Physical Society,57 (8), p. 22 Bulletin of the American Physical Society,57 (8), p. 22 2012/10 英語 公開
K. Eriguchi; M. Kamei; Y. Takao; K. Ono K. Eriguchi; M. Kamei; Y. Takao; K. Ono K. Eriguchi; M. Kamei; Y. Takao; K. Ono High-k MOSFET performance degradation by plasma process-induced charging damage - Impacts on device parameter variation High-k MOSFET performance degradation by plasma process-induced charging damage - Impacts on device parameter variation High-k MOSFET performance degradation by plasma process-induced charging damage - Impacts on device parameter variation IEEE International Integrated Reliability Workshop Final Report, 80-84 IEEE International Integrated Reliability Workshop Final Report, 80-84 IEEE International Integrated Reliability Workshop Final Report, 80-84 2012 英語 公開
K. Eriguchi; Y. Nakakubo; A. Matsuda; M. Kamei; Y. Takao; K. Ono K. Eriguchi; Y. Nakakubo; A. Matsuda; M. Kamei; Y. Takao; K. Ono K. Eriguchi; Y. Nakakubo; A. Matsuda; M. Kamei; Y. Takao; K. Ono Optimization problems for plasma-induced damage - A concept for plasma-induced damage design Optimization problems for plasma-induced damage - A concept for plasma-induced damage design Optimization problems for plasma-induced damage - A concept for plasma-induced damage design ICICDT 2012 - IEEE International Conference on Integrated Circuit Design and Technology ICICDT 2012 - IEEE International Conference on Integrated Circuit Design and Technology ICICDT 2012 - IEEE International Conference on Integrated Circuit Design and Technology 2012 英語 公開
N. Nakazaki, H. Tsuda, Y. Takao, K. Eriguchi, K. Ono N. Nakazaki, H. Tsuda, Y. Takao, K. Eriguchi, K. Ono Molecular Dynamics Analysis of Si Etching with Cl beams: Ion Incident Angle and Neutral Radical Flux Dependence Molecular Dynamics Analysis of Si Etching with Cl beams: Ion Incident Angle and Neutral Radical Flux Dependence Molecular Dynamics Analysis of Si Etching with Cl beams: Ion Incident Angle and Neutral Radical Flux Dependence Proc. The 5th International Conference on Plasma Nano-Technology & Science (IC-PLANTS), P-36 Proc. The 5th International Conference on Plasma Nano-Technology & Science (IC-PLANTS), P-36 Proc. The 5th International Conference on Plasma Nano-Technology & Science (IC-PLANTS), P-36 2012 英語 公開
Y. Takao; K. Eriguchi; K. Ono Y. Takao; K. Eriguchi; K. Ono Y. Takao; K. Eriguchi; K. Ono Miniature ion thruster using a cylindrical micro ICP Miniature ion thruster using a cylindrical micro ICP Miniature ion thruster using a cylindrical micro ICP 48th AIAA/ASME/SAE/ASEE Joint Propulsion Conference and Exhibit 2012 48th AIAA/ASME/SAE/ASEE Joint Propulsion Conference and Exhibit 2012 48th AIAA/ASME/SAE/ASEE Joint Propulsion Conference and Exhibit 2012 2012 英語 公開
H. Tsuda, Y. Takao, K. Eriguchi, K. Ono H. Tsuda, Y. Takao, K. Eriguchi, K. Ono Model Analysis of Nanoscale Surface Roughness and Rippling during Plasma Etching of Si under Oblique Ion Incidence: Effects of Oxygen Addition Model Analysis of Nanoscale Surface Roughness and Rippling during Plasma Etching of Si under Oblique Ion Incidence: Effects of Oxygen Addition Model Analysis of Nanoscale Surface Roughness and Rippling during Plasma Etching of Si under Oblique Ion Incidence: Effects of Oxygen Addition Proc. The 5th International Conference on Plasma Nano-Technology & Science (IC-PLANTS), S-02 Proc. The 5th International Conference on Plasma Nano-Technology & Science (IC-PLANTS), S-02 Proc. The 5th International Conference on Plasma Nano-Technology & Science (IC-PLANTS), S-02 2012 英語 公開
江利口 浩二 江利口 浩二 A. Matsuda, Y. Nakakubo, M. Fukasawa, Y. Takao, T. Tatsumi, K. Eriguchi, and K. Ono Three-Dimensional Parameter Mapping of Annealing Process for HBr/O2-Plasma-Induced Damages in Si Substrates Three-Dimensional Parameter Mapping of Annealing Process for HBr/O2-Plasma-Induced Damages in Si Substrates Three-Dimensional Parameter Mapping of Annealing Process for HBr/O2-Plasma-Induced Damages in Si Substrates Proc. 34th International Symposium on Dry Process (DPS), pp. 181-182 Proc. 34th International Symposium on Dry Process (DPS), pp. 181-182 Proc. 34th International Symposium on Dry Process (DPS), pp. 181-182 2012 英語 公開
Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi Numerical analysis of inductive and capacitive coupling in radio-frequency micro discharges Numerical analysis of inductive and capacitive coupling in radio-frequency micro discharges Numerical analysis of inductive and capacitive coupling in radio-frequency micro discharges Bulletin of the American Physical Society,56 (15), p. 36 Bulletin of the American Physical Society,56 (15), p. 36 Bulletin of the American Physical Society,56 (15), p. 36 2011/11 英語 公開
Y. Takao; K. Matsuoka; K. Eriguchi; K. Ono Y. Takao; K. Matsuoka; K. Eriguchi; K. Ono Y. Takao; K. Matsuoka; K. Eriguchi; K. Ono PIC-MCC simulations of capacitive RF discharges for plasma etching PIC-MCC simulations of capacitive RF discharges for plasma etching PIC-MCC simulations of capacitive RF discharges for plasma etching AIP Conference Proceedings, 1333, PART 1, 1051-1056 AIP Conference Proceedings, 1333, PART 1, 1051-1056 AIP Conference Proceedings, 1333, PART 1, 1051-1056 2011 英語 公開
K. Eriguchi; Y. Takao; K. Ono K. Eriguchi; Y. Takao; K. Ono K. Eriguchi; Y. Takao; K. Ono A new prediction model for effects of plasma-induced damage on parameter variations in advanced LSIs A new prediction model for effects of plasma-induced damage on parameter variations in advanced LSIs A new prediction model for effects of plasma-induced damage on parameter variations in advanced LSIs 2011 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2011 2011 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2011 2011 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2011 2011 英語 公開
Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi Two-Dimensional Particle-in-Cell Simulation of a Micro RF Ion Thruster Two-Dimensional Particle-in-Cell Simulation of a Micro RF Ion Thruster Two-Dimensional Particle-in-Cell Simulation of a Micro RF Ion Thruster IEPC Paper,, p. 076 IEPC Paper,, p. 076 IEPC Paper,, p. 076 2011 英語 公開
Kawanabe, Testuo; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi Kawanabe, Testuo; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi Kawanabe, Testuo; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi Microwave-excited microplasma thruster with applied magnetic field Microwave-excited microplasma thruster with applied magnetic field Microwave-excited microplasma thruster with applied magnetic field IEPC Paper,, p. 262 IEPC Paper,, p. 262 IEPC Paper,, p. 262 2011 英語 公開
H. Tsuda, Y. Takao, K. Eriguchi, K. Ono H. Tsuda, Y. Takao, K. Eriguchi, K. Ono Modeling and Simulation of Nanoscale Surface Rippling during Plasma Etching of Si under Oblique Ion Incidence Modeling and Simulation of Nanoscale Surface Rippling during Plasma Etching of Si under Oblique Ion Incidence Modeling and Simulation of Nanoscale Surface Rippling during Plasma Etching of Si under Oblique Ion Incidence Proc. 33rd International Symposium on Dry Process (DPS), 15-16 Proc. 33rd International Symposium on Dry Process (DPS), 15-16 Proc. 33rd International Symposium on Dry Process (DPS), 15-16 2011 英語 公開
K. Matsuoka, Y. Takao, K. Eriguchi, K. Ono K. Matsuoka, Y. Takao, K. Eriguchi, K. Ono Numerical Simulation of Capacitively Coupled Chlorine Plasma Using Two-dimensional Particle-in-cell/Monte Carlo Method Numerical Simulation of Capacitively Coupled Chlorine Plasma Using Two-dimensional Particle-in-cell/Monte Carlo Method Numerical Simulation of Capacitively Coupled Chlorine Plasma Using Two-dimensional Particle-in-cell/Monte Carlo Method Proc. 33rd International Symposium on Dry Process (DPS), 47-48 Proc. 33rd International Symposium on Dry Process (DPS), 47-48 Proc. 33rd International Symposium on Dry Process (DPS), 47-48 2011 英語 公開
N. Nakazaki, H. Tsuda, Y. Takao, K. Eriguchi, K. Ono N. Nakazaki, H. Tsuda, Y. Takao, K. Eriguchi, K. Ono Molecular Dynamics Analysis of Ion Incident Energy and Angle Dependence of Si etching with Cl, Br, and HBr beams Molecular Dynamics Analysis of Ion Incident Energy and Angle Dependence of Si etching with Cl, Br, and HBr beams Molecular Dynamics Analysis of Ion Incident Energy and Angle Dependence of Si etching with Cl, Br, and HBr beams Proc. 33rd International Symposium on Dry Process (DPS), 53-54 Proc. 33rd International Symposium on Dry Process (DPS), 53-54 Proc. 33rd International Symposium on Dry Process (DPS), 53-54 2011 英語 公開
H. Tsuda, Y. Takao, K. Eriguchi, K. Ono H. Tsuda, Y. Takao, K. Eriguchi, K. Ono Surface Roughness Formation during Si Etching in Cl2 and Cl2/O2 Plasmas: Atomic-scale Analysis of Three-dimensional Feature Profile Evolution Surface Roughness Formation during Si Etching in Cl2 and Cl2/O2 Plasmas: Atomic-scale Analysis of Three-dimensional Feature Profile Evolution Surface Roughness Formation during Si Etching in Cl2 and Cl2/O2 Plasmas: Atomic-scale Analysis of Three-dimensional Feature Profile Evolution Proc. The 4th International Conference on Plasma Nano-Technology & Science (IC-PLANTS), O-07 Proc. The 4th International Conference on Plasma Nano-Technology & Science (IC-PLANTS), O-07 Proc. The 4th International Conference on Plasma Nano-Technology & Science (IC-PLANTS), O-07 2011 英語 公開
江利口 浩二 江利口 浩二 A. Matsuda, Y. Nakakubo, Y. Takao, K. Eriguchi, and K. Ono Defect Profiling Using a Wet-Etch Technique and Photoreflectance Spectroscopy for He- and Ar-Plasma-Damaged Si Substrate Defect Profiling Using a Wet-Etch Technique and Photoreflectance Spectroscopy for He- and Ar-Plasma-Damaged Si Substrate Defect Profiling Using a Wet-Etch Technique and Photoreflectance Spectroscopy for He- and Ar-Plasma-Damaged Si Substrate Proc. 33rd International Symposium on Dry Process (DPS 2011), pp. 159-160 Proc. 33rd International Symposium on Dry Process (DPS 2011), pp. 159-160 Proc. 33rd International Symposium on Dry Process (DPS 2011), pp. 159-160 2011 英語 公開
H. Tsuda, Y. Takao, K. Eriguchi, K. Ono H. Tsuda, Y. Takao, K. Eriguchi, K. Ono Surface Roughness Formation during Si Etching in Chlorine-based Plasmas: Atomic-scale Analysis of Three-dimensional Feature Profile Evolution Surface Roughness Formation during Si Etching in Chlorine-based Plasmas: Atomic-scale Analysis of Three-dimensional Feature Profile Evolution Surface Roughness Formation during Si Etching in Chlorine-based Plasmas: Atomic-scale Analysis of Three-dimensional Feature Profile Evolution 2nd International Workshop on Plasma Nano-Interfaces and Plasma Characterization (2WPNI), 41-42 2nd International Workshop on Plasma Nano-Interfaces and Plasma Characterization (2WPNI), 41-42 2nd International Workshop on Plasma Nano-Interfaces and Plasma Characterization (2WPNI), 41-42 2011 英語 公開
江利口 浩二 江利口 浩二 K. Eriguchi, M. Kamei, Y. Takao, and K. Ono Prediction of Parameter Fluctuation Induced by Plasma Charging Damage in high-k MOSFET Prediction of Parameter Fluctuation Induced by Plasma Charging Damage in high-k MOSFET Prediction of Parameter Fluctuation Induced by Plasma Charging Damage in high-k MOSFET Ext. Abs. 2011 Int. Workshop on Dielectric Thin Films for Future Electron Devices, Science and Technology (IWDTF), pp. 33-34 Ext. Abs. 2011 Int. Workshop on Dielectric Thin Films for Future Electron Devices, Science and Technology (IWDTF), pp. 33-34 Ext. Abs. 2011 Int. Workshop on Dielectric Thin Films for Future Electron Devices, Science and Technology (IWDTF), pp. 33-34 2011 英語 公開
H. Tsuda, Y. Takao, K. Eriguchi, K. Ono H. Tsuda, Y. Takao, K. Eriguchi, K. Ono Atomic-scale analysis of plasma-surface interactions and feature profile evolution during Si etching in halogen-based plasmas: Monte Carlo and molecular dynamics approaches Atomic-scale analysis of plasma-surface interactions and feature profile evolution during Si etching in halogen-based plasmas: Monte Carlo and molecular dynamics approaches Atomic-scale analysis of plasma-surface interactions and feature profile evolution during Si etching in halogen-based plasmas: Monte Carlo and molecular dynamics approaches The 10th Asia Pacific Conference on Plasma Science and Technology (APCPST) and 23rd Symposium on Plasma Science for Materials (SPSM), 401 The 10th Asia Pacific Conference on Plasma Science and Technology (APCPST) and 23rd Symposium on Plasma Science for Materials (SPSM), 401 The 10th Asia Pacific Conference on Plasma Science and Technology (APCPST) and 23rd Symposium on Plasma Science for Materials (SPSM), 401 2011 英語 公開
Takao, Yoshinori; Matsuoka, Kenji; Eriguchi, Koji; Ono, Kouichi Takao, Yoshinori; Matsuoka, Kenji; Eriguchi, Koji; Ono, Kouichi Takao, Yoshinori; Matsuoka, Kenji; Eriguchi, Koji; Ono, Kouichi Particle Simulations of Sheath dynamics in Low Pressure Capacitively Coupled Argon Plasma Discharges Particle Simulations of Sheath dynamics in Low Pressure Capacitively Coupled Argon Plasma Discharges Particle Simulations of Sheath dynamics in Low Pressure Capacitively Coupled Argon Plasma Discharges Bulletin of the American Physical Society,55 (7), p. 20 Bulletin of the American Physical Society,55 (7), p. 20 Bulletin of the American Physical Society,55 (7), p. 20 2010/10 英語 公開
Takahashi, Takeshi; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi Takahashi, Takeshi; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi Takahashi, Takeshi; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi 11-GHz Microwave-Excited Microplasma Source for Electrothermal Thruster 11-GHz Microwave-Excited Microplasma Source for Electrothermal Thruster 11-GHz Microwave-Excited Microplasma Source for Electrothermal Thruster Bulletin of the American Physical Society,55 (7), p. 97 Bulletin of the American Physical Society,55 (7), p. 97 Bulletin of the American Physical Society,55 (7), p. 97 2010/10 英語 公開
K. Eriguchi; M. Kamei; Y. Takao; K. Ono K. Eriguchi; M. Kamei; Y. Takao; K. Ono K. Eriguchi; M. Kamei; Y. Takao; K. Ono Modeling the effects of plasma-induced physical damage on subthreshold leakage current in scaled MOSFETs Modeling the effects of plasma-induced physical damage on subthreshold leakage current in scaled MOSFETs Modeling the effects of plasma-induced physical damage on subthreshold leakage current in scaled MOSFETs 2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010, 94-97 2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010, 94-97 2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010, 94-97 2010 英語 公開
Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi Numerical Analysis of a Micro Ion Thruster Using PIC/MCC Model Numerical Analysis of a Micro Ion Thruster Using PIC/MCC Model Numerical Analysis of a Micro Ion Thruster Using PIC/MCC Model AIAA Paper,, p. 6947 AIAA Paper,, p. 6947 AIAA Paper,, p. 6947 2010 英語 公開
H. Tsuda, Y. Takao, K. Eriguchi, K. Ono H. Tsuda, Y. Takao, K. Eriguchi, K. Ono Molecular Dynamics Analysis of Surface Roughness during Si Etching in Chlorine-Based Plasmas Molecular Dynamics Analysis of Surface Roughness during Si Etching in Chlorine-Based Plasmas Molecular Dynamics Analysis of Surface Roughness during Si Etching in Chlorine-Based Plasmas Proc. 32nd International Symposium on Dry Process (DPS), 179-180 Proc. 32nd International Symposium on Dry Process (DPS), 179-180 Proc. 32nd International Symposium on Dry Process (DPS), 179-180 2010 英語 公開
江利口 浩二 江利口 浩二 A. Matsuda, Y. Nakakubo, Y. Takao, K. Eriguchi, and K. Ono Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature- Controlled Photoreflectance Spectroscopy Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature- Controlled Photoreflectance Spectroscopy Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature- Controlled Photoreflectance Spectroscopy Proc. 32nd International Symposium on Dry Process (DPS), pp. 191-192 Proc. 32nd International Symposium on Dry Process (DPS), pp. 191-192 Proc. 32nd International Symposium on Dry Process (DPS), pp. 191-192 2010 英語 公開
Y. Takao, K. Matsuoka, K. Eriguchi, K. Ono Y. Takao, K. Matsuoka, K. Eriguchi, K. Ono PIC-MCC Simulations of Capacitive RF Discharges for Plasma Etching PIC-MCC Simulations of Capacitive RF Discharges for Plasma Etching PIC-MCC Simulations of Capacitive RF Discharges for Plasma Etching 27th International Symposium on Rarefied Gas Dynamics (RGD), 296 27th International Symposium on Rarefied Gas Dynamics (RGD), 296 27th International Symposium on Rarefied Gas Dynamics (RGD), 296 2010 英語 公開
江利口 浩二 江利口 浩二 M. Kamei, Y. Takao, K. Eriguchi, and K. Ono Comparative Study of Plasma-Charging Damage in High-k Dielectric and p-n Junction and their Effects on Off-State Leakage Current of MOSFETs Comparative Study of Plasma-Charging Damage in High-k Dielectric and p-n Junction and their Effects on Off-State Leakage Current of MOSFETs Comparative Study of Plasma-Charging Damage in High-k Dielectric and p-n Junction and their Effects on Off-State Leakage Current of MOSFETs Proc. 32nd International Symposium on Dry Process (DPS), pp. 189-190 Proc. 32nd International Symposium on Dry Process (DPS), pp. 189-190 Proc. 32nd International Symposium on Dry Process (DPS), pp. 189-190 2010 英語 公開
H. Miyata, H. Tsuda, Takao, K. Eriguchi, K. Ono H. Miyata, H. Tsuda, Takao, K. Eriguchi, K. Ono In Situ Fourier Transform Infrared Diagnostics of Surface Reaction Layer and Reaction Products in Cl2 Plasma Etching In Situ Fourier Transform Infrared Diagnostics of Surface Reaction Layer and Reaction Products in Cl2 Plasma Etching In Situ Fourier Transform Infrared Diagnostics of Surface Reaction Layer and Reaction Products in Cl2 Plasma Etching Proc. The 3rd Int. Conf. on Plasma-Nano Technology & Science (ICPLANTS), P-20 Proc. The 3rd Int. Conf. on Plasma-Nano Technology & Science (ICPLANTS), P-20 Proc. The 3rd Int. Conf. on Plasma-Nano Technology & Science (ICPLANTS), P-20 2010 英語 公開
江利口 浩二 江利口 浩二 K. Eriguchi, Y. Nakakubo, A. Matsuda, Y. Takao, and K. Ono Trade-Off Relationship between Si Recess and Defect Density Formed by Plasma-Induced Damage in Planar MOSFETs and the Optimization Strategies Trade-Off Relationship between Si Recess and Defect Density Formed by Plasma-Induced Damage in Planar MOSFETs and the Optimization Strategies Trade-Off Relationship between Si Recess and Defect Density Formed by Plasma-Induced Damage in Planar MOSFETs and the Optimization Strategies Proc. 32nd International Symposium on Dry Process (DPS), pp. 185-186 Proc. 32nd International Symposium on Dry Process (DPS), pp. 185-186 Proc. 32nd International Symposium on Dry Process (DPS), pp. 185-186 2010 英語 公開
H. Tsuda, T. Nagaoka, Y. Takao, K. Eriguchi, K. Ono H. Tsuda, T. Nagaoka, Y. Takao, K. Eriguchi, K. Ono Atomic-scale analysis of plasma-surface interactions and feature profile evolution by molecular dynamics approaches Atomic-scale analysis of plasma-surface interactions and feature profile evolution by molecular dynamics approaches Atomic-scale analysis of plasma-surface interactions and feature profile evolution by molecular dynamics approaches Proc. The 3rd Int. Conf. on Plasma-Nano Technology & Science (ICPLANTS), P-22 Proc. The 3rd Int. Conf. on Plasma-Nano Technology & Science (ICPLANTS), P-22 Proc. The 3rd Int. Conf. on Plasma-Nano Technology & Science (ICPLANTS), P-22 2010 英語 公開
江利口 浩二 江利口 浩二 Y. Nakakubo, A. Matsuda, Y. Takao, K. Eriguchi, and K. Ono Study of Wet-Etch Rate of Plasma-Damaged Surface and Interface Layers and Residual Defect Sites Study of Wet-Etch Rate of Plasma-Damaged Surface and Interface Layers and Residual Defect Sites Study of Wet-Etch Rate of Plasma-Damaged Surface and Interface Layers and Residual Defect Sites Proc. 32nd International Symposium on Dry Process (DPS), pp. 173-174 Proc. 32nd International Symposium on Dry Process (DPS), pp. 173-174 Proc. 32nd International Symposium on Dry Process (DPS), pp. 173-174 2010 英語 公開
江利口 浩二 江利口 浩二 K. Eriguchi, Y. Nakakubo, A. Matsuda, M. Kamei, Y. Takao, and K. Ono Effects of Plasma Process Fluctuation on Variation in MOS Device Parameters Effects of Plasma Process Fluctuation on Variation in MOS Device Parameters Effects of Plasma Process Fluctuation on Variation in MOS Device Parameters Proc. The 3rd Int. Conf. on Plasma-Nano Technology & Science (ICPLANTS), P26 Proc. The 3rd Int. Conf. on Plasma-Nano Technology & Science (ICPLANTS), P26 Proc. The 3rd Int. Conf. on Plasma-Nano Technology & Science (ICPLANTS), P26 2010 英語 公開
A. Matsuda; Y. Nakakubo; R. Ogino; H. Ohta; K. Eriguchi; K. Ono A. Matsuda; Y. Nakakubo; R. Ogino; H. Ohta; K. Eriguchi; K. Ono A. Matsuda; Y. Nakakubo; R. Ogino; H. Ohta; K. Eriguchi; K. Ono Simulation and experimental study on the characteristics of plasma-induced damage and methodology for accurate damage analysis Simulation and experimental study on the characteristics of plasma-induced damage and methodology for accurate damage analysis Simulation and experimental study on the characteristics of plasma-induced damage and methodology for accurate damage analysis 2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009, 97-100 2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009, 97-100 2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009, 97-100 2009 英語 公開
K. Eriguchi; A. Matsuda; Y. Nakakubo; M. Kamei; H. Ohta; K. Ono K. Eriguchi; A. Matsuda; Y. Nakakubo; M. Kamei; H. Ohta; K. Ono K. Eriguchi; A. Matsuda; Y. Nakakubo; M. Kamei; H. Ohta; K. Ono Study of plasma-induced "Si recess structure" and its effects on threshold voltage variability in advanced MOSFETs Study of plasma-induced "Si recess structure" and its effects on threshold voltage variability in advanced MOSFETs Study of plasma-induced "Si recess structure" and its effects on threshold voltage variability in advanced MOSFETs 2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009, 101-104 2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009, 101-104 2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009, 101-104 2009 英語 公開
江利口 浩二 江利口 浩二 A. Matsuda, Y. Nakakubo, M. Kamei, Y. Takao, K. Eriguchi, and K. Ono Assessment of Ion-Bombardment Damage in Plasma-Exposed Si by Interface Layer Thickness and Charge-Trapping Defects Assessment of Ion-Bombardment Damage in Plasma-Exposed Si by Interface Layer Thickness and Charge-Trapping Defects Assessment of Ion-Bombardment Damage in Plasma-Exposed Si by Interface Layer Thickness and Charge-Trapping Defects Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM),, 346-347 Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM),, 346-347 Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 346-347 2009 英語 公開
T. Takahashi, Y. Ichida, S. Kitanishi, K. Eriguchi, K. Ono T. Takahashi, Y. Ichida, S. Kitanishi, K. Eriguchi, K. Ono Microwave-Excited Microplasma Thruster: Design of Improved Model Aiming for Flight Microwave-Excited Microplasma Thruster: Design of Improved Model Aiming for Flight Microwave-Excited Microplasma Thruster: Design of Improved Model Aiming for Flight 27th International Symposium on Space Technology and Science (ISTS), b-21 27th International Symposium on Space Technology and Science (ISTS), b-21 27th International Symposium on Space Technology and Science (ISTS), b-21 2009 英語 公開
T. Takahashi, S. Kitanishi, Y. Takao, K. Eriguchi, K. Ono T. Takahashi, S. Kitanishi, Y. Takao, K. Eriguchi, K. Ono Microwave-Excited Microplasma Thruster: Design Improvement for Implementation to Satellite Microwave-Excited Microplasma Thruster: Design Improvement for Implementation to Satellite Microwave-Excited Microplasma Thruster: Design Improvement for Implementation to Satellite 31st International Electric Propulsion Conference (IEPC), 190 31st International Electric Propulsion Conference (IEPC), 190 31st International Electric Propulsion Conference (IEPC), 190 2009 英語 公開
H. Tsuda, M. Mori, K. Eriguchi, K. Ono H. Tsuda, M. Mori, K. Eriguchi, K. Ono Atomic-scale cellular model and profile simulation of Si etching: Analysis of profile anomalies and microscopic uniformity Atomic-scale cellular model and profile simulation of Si etching: Analysis of profile anomalies and microscopic uniformity Atomic-scale cellular model and profile simulation of Si etching: Analysis of profile anomalies and microscopic uniformity Proc. 31st International Symposium on Dry Process (DPS), 45-46 Proc. 31st International Symposium on Dry Process (DPS), 45-46 Proc. 31st International Symposium on Dry Process (DPS), 45-46 2009 英語 公開
江利口 浩二 江利口 浩二 Y. Nakakubo, A. Matsuda, M. Fukasawa, Y. Takao, T. Tatsumi, K. Eriguchi, and K. Ono Optical and Electrical Characterization of H2 Plasma-Damaged Si Surface Structures and its Impact on In-line Monitoring Optical and Electrical Characterization of H2 Plasma-Damaged Si Surface Structures and its Impact on In-line Monitoring Optical and Electrical Characterization of H2 Plasma-Damaged Si Surface Structures and its Impact on In-line Monitoring Proc. 31st International Symposium on Dry Process (DPS), 125-126 Proc. 31st International Symposium on Dry Process (DPS), 125-126 Proc. 31st International Symposium on Dry Process (DPS), 125-126 2009 英語 公開
江利口 浩二 江利口 浩二 K. Eriguchi, Y. Nakakubo, A. Matsuda, M. Kamei, Y. Takao, and K. Ono Threshold Voltage Instability Induced by Plasma Process Damage in Advanced MOSFETs Threshold Voltage Instability Induced by Plasma Process Damage in Advanced MOSFETs Threshold Voltage Instability Induced by Plasma Process Damage in Advanced MOSFETs Proc. 31st International Symposium on Dry Process (DPS), 267-268 Proc. 31st International Symposium on Dry Process (DPS), 267-268 Proc. 31st International Symposium on Dry Process (DPS), 267-268 2009 英語 公開
江利口 浩二 江利口 浩二 K. Eriguchi, Y. Nakakubo, A. Matsuda, M. Kamei, Y. Takao, and K. Ono Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced MOSFETs Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced MOSFETs Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced MOSFETs Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 338-339 Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 338-339 Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 338-339 2009 英語 公開
Y. Nakakubo; A. Matsuda; M. Kamei; H. Ohta; K. Eriguchi; K. Ono Y. Nakakubo; A. Matsuda; M. Kamei; H. Ohta; K. Eriguchi; K. Ono Y. Nakakubo; A. Matsuda; M. Kamei; H. Ohta; K. Eriguchi; K. Ono Analysis of Si substrate damage induced by inductively coupled plasma reactor with various superposed bias frequencies Analysis of Si substrate damage induced by inductively coupled plasma reactor with various superposed bias frequencies Analysis of Si substrate damage induced by inductively coupled plasma reactor with various superposed bias frequencies Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT, 101-104 Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT, 101-104 Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT, 101-104 2008 英語 公開
K. Eriguchi; M. Kamei; K. Okada; H. Ohta; K. Ono K. Eriguchi; M. Kamei; K. Okada; H. Ohta; K. Ono K. Eriguchi; M. Kamei; K. Okada; H. Ohta; K. Ono Threshold voltage shift instability induced by plasma charging damage in MOSFETs with high-K Dielectric Threshold voltage shift instability induced by plasma charging damage in MOSFETs with high-K Dielectric Threshold voltage shift instability induced by plasma charging damage in MOSFETs with high-K Dielectric Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT, 97-100 Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT, 97-100 Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT, 97-100 2008 英語 公開
T. Takahashi, Y. Ichida, Y. Takao, K. Eriguchi, K. Ono T. Takahashi, Y. Ichida, Y. Takao, K. Eriguchi, K. Ono Numerical Simulation of a Microwave-Excited Microplasma Thruster Numerical Simulation of a Microwave-Excited Microplasma Thruster Numerical Simulation of a Microwave-Excited Microplasma Thruster 26th International Symposium on Space Technology and Science (ISTS), b-17 26th International Symposium on Space Technology and Science (ISTS), b-17 26th International Symposium on Space Technology and Science (ISTS), b-17 2008 英語 公開
Y. Ichida, T. Takahashi, Y. Takao, K. Eriguchi, K. Ono Y. Ichida, T. Takahashi, Y. Takao, K. Eriguchi, K. Ono Analysis of Microwave-excited Plasma Thrusters with Hydrogen Propellant Analysis of Microwave-excited Plasma Thrusters with Hydrogen Propellant Analysis of Microwave-excited Plasma Thrusters with Hydrogen Propellant 26th International Symposium on Space Technology and Science (ISTS), b-20 26th International Symposium on Space Technology and Science (ISTS), b-20 26th International Symposium on Space Technology and Science (ISTS), b-20 2008 英語 公開
T. Nagaoka, H. Ohta, K. Eriguchi, K. Ono T. Nagaoka, H. Ohta, K. Eriguchi, K. Ono Atomic-scale simulation of Si etching by energetic Br+ and Br2+ ions for the analysis of Gate- or STI-etching processes Atomic-scale simulation of Si etching by energetic Br+ and Br2+ ions for the analysis of Gate- or STI-etching processes Atomic-scale simulation of Si etching by energetic Br+ and Br2+ ions for the analysis of Gate- or STI-etching processes Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 334-335 Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 334-335 Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 334-335 2008 英語 公開
江利口 浩二 江利口 浩二 A. Matsuda, Y. Nakakubo, Y. Ueda, H. Ohta, K. Eriguchi, and K. Ono Significance of Interface Layer between Surface Layer and Si Substrate in Plasma-Exposed Structures and Its Impacts on Plasma-Induced Damage Analysis Significance of Interface Layer between Surface Layer and Si Substrate in Plasma-Exposed Structures and Its Impacts on Plasma-Induced Damage Analysis Significance of Interface Layer between Surface Layer and Si Substrate in Plasma-Exposed Structures and Its Impacts on Plasma-Induced Damage Analysis Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 358-359 Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 358-359 Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 358-359 2008 英語 公開
M. Kamei; K. Eriguchi; K. Okada; K. Ono M. Kamei; K. Eriguchi; K. Okada; K. Ono M. Kamei; K. Eriguchi; K. Okada; K. Ono Mechanisms for junction degradation of advanced MOSFETs induced by plasma processing Mechanisms for junction degradation of advanced MOSFETs induced by plasma processing Mechanisms for junction degradation of advanced MOSFETs induced by plasma processing Proceedings 2007 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT, 117-120 Proceedings 2007 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT, 117-120 Proceedings 2007 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT, 117-120 2007 英語 公開
M. Mori, S. Irie, N. Itabashi, K. Eriguchi, K. Ono M. Mori, S. Irie, N. Itabashi, K. Eriguchi, K. Ono A model analysis of the feature profile evolution during Si etching in HBr-containing plasmas A model analysis of the feature profile evolution during Si etching in HBr-containing plasmas A model analysis of the feature profile evolution during Si etching in HBr-containing plasmas Proc. 29th International Symposium on Dry Process (DPS), 7-8 Proc. 29th International Symposium on Dry Process (DPS), 7-8 Proc. 29th International Symposium on Dry Process (DPS), 7-8 2007 英語 公開
D. Hamada, K. Osari, K. Nakamura, K. Eriguchi, K. Ono, M. Oosawa, K. Sakoda, S. Hasaka, M. Inoue D. Hamada, K. Osari, K. Nakamura, K. Eriguchi, K. Ono, M. Oosawa, K. Sakoda, S. Hasaka, M. Inoue Etching of high-k dielectric HfO2 films in BCl3/Cl2/O2 plasmas without rf biasing Etching of high-k dielectric HfO2 films in BCl3/Cl2/O2 plasmas without rf biasing Etching of high-k dielectric HfO2 films in BCl3/Cl2/O2 plasmas without rf biasing Proc. 29th International Symposium on Dry Process (DPS), 11-12 Proc. 29th International Symposium on Dry Process (DPS), 11-12 Proc. 29th International Symposium on Dry Process (DPS), 11-12 2007 英語 公開
S. Irie, Y. Osano, M. Mori, K. Eriguchi, K. Ono S. Irie, Y. Osano, M. Mori, K. Eriguchi, K. Ono Profile simulation model including ion reflection on feature surfaces during plasma etching Profile simulation model including ion reflection on feature surfaces during plasma etching Profile simulation model including ion reflection on feature surfaces during plasma etching Proc. 29th International Symposium on Dry Process (DPS), 35-36 Proc. 29th International Symposium on Dry Process (DPS), 35-36 Proc. 29th International Symposium on Dry Process (DPS), 35-36 2007 英語 公開
Y. Ueda, K. Nakamura, D. Hamada, M. Yoshida, K. Eriguchi, K. Ono Y. Ueda, K. Nakamura, D. Hamada, M. Yoshida, K. Eriguchi, K. Ono Selective etching of high-k dielectric HfO2 films in BCl3-containing plasmas without rf biasing Selective etching of high-k dielectric HfO2 films in BCl3-containing plasmas without rf biasing Selective etching of high-k dielectric HfO2 films in BCl3-containing plasmas without rf biasing Proc. 29th International Symposium on Dry Process (DPS), 283-284 Proc. 29th International Symposium on Dry Process (DPS), 283-284 Proc. 29th International Symposium on Dry Process (DPS), 283-284 2007 英語 公開
S. Irie, Y. Osano, M. Mori, K. Eriguchi, K. Ono S. Irie, Y. Osano, M. Mori, K. Eriguchi, K. Ono Model analysis of ion reflection on feature surfaces and profile evolution during Si etching in chlorine-and bromine containing plasmas Model analysis of ion reflection on feature surfaces and profile evolution during Si etching in chlorine-and bromine containing plasmas Model analysis of ion reflection on feature surfaces and profile evolution during Si etching in chlorine-and bromine containing plasmas 18th International Symposium on Plasma Chemistry (ISPC-18), 41 18th International Symposium on Plasma Chemistry (ISPC-18), 41 18th International Symposium on Plasma Chemistry (ISPC-18), 41 2007 英語 公開
D. Hamada, K. Nakamura, K. Eriguchi, K. Ono D. Hamada, K. Nakamura, K. Eriguchi, K. Ono Etching of high-k dielectric HfO2 films in BCl3-containing plasmas without rf biasing Etching of high-k dielectric HfO2 films in BCl3-containing plasmas without rf biasing Etching of high-k dielectric HfO2 films in BCl3-containing plasmas without rf biasing 18th International Symposium on Plasma Chemistry (ISPC-18), 42 18th International Symposium on Plasma Chemistry (ISPC-18), 42 18th International Symposium on Plasma Chemistry (ISPC-18), 42 2007 英語 公開
T. Takahashi, Y. Takao, K. Eriguchi, K. Ono T. Takahashi, Y. Takao, K. Eriguchi, K. Ono Numerical analysis and optical diagnostics of a microwave-excited plasma source for microthrusters Numerical analysis and optical diagnostics of a microwave-excited plasma source for microthrusters Numerical analysis and optical diagnostics of a microwave-excited plasma source for microthrusters 18th International Symposium on Plasma Chemistry (ISPC-18), 245 18th International Symposium on Plasma Chemistry (ISPC-18), 245 18th International Symposium on Plasma Chemistry (ISPC-18), 245 2007 英語 公開
H. Fukumoto, K. Eriguchi, K. Ono H. Fukumoto, K. Eriguchi, K. Ono Effects of geometrically different microstructures on etching profiles Effects of geometrically different microstructures on etching profiles Effects of geometrically different microstructures on etching profiles 18th International Symposium on Plasma Chemistry (ISPC-18), 329 18th International Symposium on Plasma Chemistry (ISPC-18), 329 18th International Symposium on Plasma Chemistry (ISPC-18), 329 2007 英語 公開
Y. Ueda, M. Yoshida, K. Eriguchi, K. On Y. Ueda, M. Yoshida, K. Eriguchi, K. On Analysis of plasma-surface interactions during etching of Si and high-k HfO2 films by in-situ diagnostics of reactants and reaction products Analysis of plasma-surface interactions during etching of Si and high-k HfO2 films by in-situ diagnostics of reactants and reaction products Analysis of plasma-surface interactions during etching of Si and high-k HfO2 films by in-situ diagnostics of reactants and reaction products 18th International Symposium on Plasma Chemistry (ISPC-18), 346 18th International Symposium on Plasma Chemistry (ISPC-18), 346 18th International Symposium on Plasma Chemistry (ISPC-18), 346 2007 英語 公開
江利口 浩二 江利口 浩二 Y. Nakakubo, Y. Ueda, M. Yoshida, D. Hamada, M. Kamei, K. Eriguchi, and K. Ono Scaling of Plasma-Induced Defect Generation Probability in Si: Effects of Bias Voltage at Single- and Superposed-Frequencies Scaling of Plasma-Induced Defect Generation Probability in Si: Effects of Bias Voltage at Single- and Superposed-Frequencies Scaling of Plasma-Induced Defect Generation Probability in Si: Effects of Bias Voltage at Single- and Superposed-Frequencies Proc. 29th International Symposium on Dry Process (DPS), 287-288 Proc. 29th International Symposium on Dry Process (DPS), 287-288 Proc. 29th International Symposium on Dry Process (DPS), 287-288 2007 英語 公開
江利口 浩二 江利口 浩二 K. Eriguchi, A. Ohno, D. Hamada, M. Kamei, H. Fukumoto, and K. Ono Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 356-357 Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 356-357 Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 356-357 2007 英語 公開
江利口 浩二 江利口 浩二 K. Eriguchi, M. Kamei, D. Hamada, K. Okada, and K. Ono A Comparative Study of Plasma Source-Dependent Charging Polarity in MOSFETs with High-k and SiO2 Gate Dielectrics A Comparative Study of Plasma Source-Dependent Charging Polarity in MOSFETs with High-k and SiO2 Gate Dielectrics A Comparative Study of Plasma Source-Dependent Charging Polarity in MOSFETs with High-k and SiO2 Gate Dielectrics Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 722-723 Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 722-723 Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 722-723 2007 英語 公開
K. Nakamura, K. Osari, T. Kitagawa, K. Takahashi, K. Eriguchi, K. Ono K. Nakamura, K. Osari, T. Kitagawa, K. Takahashi, K. Eriguchi, K. Ono Plasma etching of high-k and metal gate materials in high-density chlorine-containing plasma Plasma etching of high-k and metal gate materials in high-density chlorine-containing plasma Plasma etching of high-k and metal gate materials in high-density chlorine-containing plasma Proc. The 6th Int. Conf. Reactive Plasmas (ICRP) / 23rd Symp. Plasma Process (SPP), 459-460 Proc. The 6th Int. Conf. Reactive Plasmas (ICRP) / 23rd Symp. Plasma Process (SPP), 459-460 Proc. The 6th Int. Conf. Reactive Plasmas (ICRP) / 23rd Symp. Plasma Process (SPP), 459-460 2006 英語 公開
T. Yamashita; K. Ota; K. Shiga; T. Hayashi; H. Umeda; H. Oda; T. Eimori; M. Inuishi; Y. Ohji; K. Eriguchi; K. Nakanishi; H. Nakaoka; T. Yamada; M. Nakamura; I. Miyanaga; A. Kajiya; M. Kubota; M. Ogura T. Yamashita; K. Ota; K. Shiga; T. Hayashi; H. Umeda; H. Oda; T. Eimori; M. Inuishi; Y. Ohji; K. Eriguchi; K. Nakanishi; H. Nakaoka; T. Yamada; M. Nakamura; I. Miyanaga; A. Kajiya; M. Kubota; M. Ogura T. Yamashita; K. Ota; K. Shiga; T. Hayashi; H. Umeda; H. Oda; T. Eimori; M. Inuishi; Y. Ohji; K. Eriguchi; K. Nakanishi; H. Nakaoka; T. Yamada; M. Nakamura; I. Miyanaga; A. Kajiya; M. Kubota; M. Ogura Impact of boron penetration from S/D-extension on gate-Oxide reliability for 65-nm node CMOS and beyond Impact of boron penetration from S/D-extension on gate-Oxide reliability for 65-nm node CMOS and beyond Impact of boron penetration from S/D-extension on gate-Oxide reliability for 65-nm node CMOS and beyond Digest of Technical Papers - Symposium on VLSI Technology, 136-137 Digest of Technical Papers - Symposium on VLSI Technology, 136-137 Digest of Technical Papers - Symposium on VLSI Technology, 136-137 2004 英語 公開
K. Tomita; K. Hashimoto; T. Inbe; T. Oashi; K. Tsukamoto; Y. Nishioka; M. Matsuura; T. Eimori; M. Inuishi; I. Miyanaga; M. Nakamura; T. Kishimoto; T. Yamada; K. Eriguchi; H. Yuasa; T. Satake; A. Kajiya; M. Ogura K. Tomita; K. Hashimoto; T. Inbe; T. Oashi; K. Tsukamoto; Y. Nishioka; M. Matsuura; T. Eimori; M. Inuishi; I. Miyanaga; M. Nakamura; T. Kishimoto; T. Yamada; K. Eriguchi; H. Yuasa; T. Satake; A. Kajiya; M. Ogura K. Tomita; K. Hashimoto; T. Inbe; T. Oashi; K. Tsukamoto; Y. Nishioka; M. Matsuura; T. Eimori; M. Inuishi; I. Miyanaga; M. Nakamura; T. Kishimoto; T. Yamada; K. Eriguchi; H. Yuasa; T. Satake; A. Kajiya; M. Ogura Sub-1 μm<sup>2</sup> high density embedded SRAM technologies for 100 nm generation SOC and beyond Sub-1 μm<sup>2</sup> high density embedded SRAM technologies for 100 nm generation SOC and beyond Sub-1 μm<sup>2</sup> high density embedded SRAM technologies for 100 nm generation SOC and beyond IEEE Symposium on VLSI Circuits, Digest of Technical Papers, 14-15 IEEE Symposium on VLSI Circuits, Digest of Technical Papers, 14-15 IEEE Symposium on VLSI Circuits, Digest of Technical Papers, 14-15 2002 英語 公開
K. Itonaga; K. Eriguchi; I. Miyanaga; A. Kajiya; M. Ogura; T. Tsutsumi; H. Sayama; H. Oda; T. Eimori; H. Morimoto K. Itonaga; K. Eriguchi; I. Miyanaga; A. Kajiya; M. Ogura; T. Tsutsumi; H. Sayama; H. Oda; T. Eimori; H. Morimoto K. Itonaga; K. Eriguchi; I. Miyanaga; A. Kajiya; M. Ogura; T. Tsutsumi; H. Sayama; H. Oda; T. Eimori; H. Morimoto A novel Bi-layer cobalt silicide process with nitrogen implantation for sub-50nm CMOS and beyond A novel Bi-layer cobalt silicide process with nitrogen implantation for sub-50nm CMOS and beyond A novel Bi-layer cobalt silicide process with nitrogen implantation for sub-50nm CMOS and beyond IEEE Symposium on VLSI Circuits, Digest of Technical Papers, 136-137 IEEE Symposium on VLSI Circuits, Digest of Technical Papers, 136-137 IEEE Symposium on VLSI Circuits, Digest of Technical Papers, 136-137 2002 英語 公開
Yoshinao Harada; Koji Eriguchi; Masaaki Niwa; Takanobu Watanabe; Iwao Ohdomari Yoshinao Harada; Koji Eriguchi; Masaaki Niwa; Takanobu Watanabe; Iwao Ohdomari Yoshinao Harada; Koji Eriguchi; Masaaki Niwa; Takanobu Watanabe; Iwao Ohdomari Impacts of strained SiO<sub>2</sub> on TDDB lifetime projection Impacts of strained SiO<sub>2</sub> on TDDB lifetime projection Impacts of strained SiO<sub>2</sub> on TDDB lifetime projection Digest of Technical Papers - Symposium on VLSI Technology, 216-217 Digest of Technical Papers - Symposium on VLSI Technology, 216-217 Digest of Technical Papers - Symposium on VLSI Technology, 216-217 2000 英語 公開
Masashi Agata; Masayuki Sogawa; Osamu Maida; Koji Eriguchi; Akira Fujimoto; Takeshi Kanashima; Masanori Okuyama Masashi Agata; Masayuki Sogawa; Osamu Maida; Koji Eriguchi; Akira Fujimoto; Takeshi Kanashima; Masanori Okuyama Masashi Agata; Masayuki Sogawa; Osamu Maida; Koji Eriguchi; Akira Fujimoto; Takeshi Kanashima; Masanori Okuyama Optical characterization of antenna-area-dependent gate oxide charging damage in MOS capacitors by photoreflectance spectroscopy Optical characterization of antenna-area-dependent gate oxide charging damage in MOS capacitors by photoreflectance spectroscopy Optical characterization of antenna-area-dependent gate oxide charging damage in MOS capacitors by photoreflectance spectroscopy International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings, 97-100 International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings, 97-100 International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings, 97-100 2000 英語 公開
江利口 浩二 江利口 浩二 M. Sougawa, T. Kanashima, M. Agata, K. Yamashita, M. Okuyama, A. Fujimoto, and K. Eriguchi Non-Destructive and Contactless Monitoring Technique of Si Surface Stress by Photoreflectance Non-Destructive and Contactless Monitoring Technique of Si Surface Stress by Photoreflectance Non-Destructive and Contactless Monitoring Technique of Si Surface Stress by Photoreflectance Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 456-457 Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 456-457 Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 456-457 2000 英語 公開
江利口 浩二 江利口 浩二 M. Agata, H. Wada, O. Maeda, K. Eriguchi, A. Fujimoto, T. Kanashima, and M. Okuyama Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 328-329 Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 328-329 Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 328-329 1999 英語 公開
Yukiko Kosaka; Koji Eriguchi; Takayuki Yamada Yukiko Kosaka; Koji Eriguchi; Takayuki Yamada Yukiko Kosaka; Koji Eriguchi; Takayuki Yamada Stress mode of gate oxide charging during the MERIE and the ICP processing and its effect on the gate oxide reliability Stress mode of gate oxide charging during the MERIE and the ICP processing and its effect on the gate oxide reliability Stress mode of gate oxide charging during the MERIE and the ICP processing and its effect on the gate oxide reliability International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings, 209-212 International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings, 209-212 International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings, 209-212 1998 英語 公開
江利口 浩二 江利口 浩二 H. Wada, M. Agata, K. Eriguchi, A. Fujimoto, T. Kanashima, and M. Okuyama Contactless Characterization of Plasma-Induced Damage in Si Substrate by Photoreflectance Spectroscopy Contactless Characterization of Plasma-Induced Damage in Si Substrate by Photoreflectance Spectroscopy Contactless Characterization of Plasma-Induced Damage in Si Substrate by Photoreflectance Spectroscopy Proc. 20th International Symposium on Dry Process (DPS), 109-114 Proc. 20th International Symposium on Dry Process (DPS), 109-114 Proc. 20th International Symposium on Dry Process (DPS), 109-114 1998 英語 公開
江利口 浩二 江利口 浩二 H. Wada, K. Eriguchi, A. Fujimoto, T. Kanashima, and M. Okuyama Photoreflectance Spectroscopic Technique - A New Model for Estimation of Plasma-Induced Defect Density in Si Substrate Photoreflectance Spectroscopic Technique - A New Model for Estimation of Plasma-Induced Defect Density in Si Substrate Photoreflectance Spectroscopic Technique - A New Model for Estimation of Plasma-Induced Defect Density in Si Substrate Proc. Int. Symp. Plasma Process-Induced Damage (P2ID), 152-155 Proc. Int. Symp. Plasma Process-Induced Damage (P2ID), 152-155 Proc. Int. Symp. Plasma Process-Induced Damage (P2ID), 152-155 1998 英語 公開
K. Eriguchi; T. Yamada; Y. Kosaka; M. Niwa K. Eriguchi; T. Yamada; Y. Kosaka; M. Niwa K. Eriguchi; T. Yamada; Y. Kosaka; M. Niwa Impacts of plasma process-induced damage on ultra-thin gate oxide reliability Impacts of plasma process-induced damage on ultra-thin gate oxide reliability Impacts of plasma process-induced damage on ultra-thin gate oxide reliability Annual Proceedings - Reliability Physics (Symposium), 178-183 Annual Proceedings - Reliability Physics (Symposium), 178-183 Annual Proceedings - Reliability Physics (Symposium), 178-183 1997 英語 公開
Koji Eriguchi; Takaaki Imai; Akira Asai; Masanori Okuyama Koji Eriguchi; Takaaki Imai; Akira Asai; Masanori Okuyama Koji Eriguchi; Takaaki Imai; Akira Asai; Masanori Okuyama New evaluation technique of plasma-induced Si substrate damage by photoreflectance spectroscopy New evaluation technique of plasma-induced Si substrate damage by photoreflectance spectroscopy New evaluation technique of plasma-induced Si substrate damage by photoreflectance spectroscopy International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings, 215-218 International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings, 215-218 International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings, 215-218 1997 英語 公開
江利口 浩二 江利口 浩二 M. Takase, K. Eriguchi, and B. Mizuno Suppressing Ion Implantation Induced Oxide Charging by Utilizing Physically Damaged Oxide Region Suppressing Ion Implantation Induced Oxide Charging by Utilizing Physically Damaged Oxide Region Suppressing Ion Implantation Induced Oxide Charging by Utilizing Physically Damaged Oxide Region Extended Abstract of Int. Conf. Solid State Devices and Materials (SSDM), 410-411 Extended Abstract of Int. Conf. Solid State Devices and Materials (SSDM), 410-411 Extended Abstract of Int. Conf. Solid State Devices and Materials (SSDM), 410-411 1996 英語 公開
江利口 浩二 江利口 浩二 K. Eriguchi and Y. Uraoka Correlating charge-to-breakdown with constant-current injection to gate oxide lifetime under constant-voltage stress Correlating charge-to-breakdown with constant-current injection to gate oxide lifetime under constant-voltage stress Correlating charge-to-breakdown with constant-current injection to gate oxide lifetime under constant-voltage stress Extended Abstract of Int. Conf. Solid State Devices and Materials (SSDM), 276-278 Extended Abstract of Int. Conf. Solid State Devices and Materials (SSDM), 276-278 Extended Abstract of Int. Conf. Solid State Devices and Materials (SSDM), 276-278 1995 英語 公開
江利口 浩二 江利口 浩二 M. Ohkuni, M. Kubota, I. Nakayama, K. Eriguchi, T. Tamaki, K. Harafuji, N. Nomura, and S. Sivaram Lissajous Electron Plasma Etching For Sub-half Micron LSI Lissajous Electron Plasma Etching For Sub-half Micron LSI Lissajous Electron Plasma Etching For Sub-half Micron LSI Symp. on VLSI Technology, 151-152 Symp. on VLSI Technology, 151-152 Symp. on VLSI Technology, 151-152 1993 英語 公開
江利口 浩二 江利口 浩二 Y. Uraoka, K. Eriguchi, T. Tamaki, and K. Tsuji Evaluation Technique of Gate Oxide Damage Evaluation Technique of Gate Oxide Damage Evaluation Technique of Gate Oxide Damage IEEE Int. Conference on Microelectronic Test Structures (ICMTS) 6, 149-153 IEEE Int. Conference on Microelectronic Test Structures (ICMTS) 6, 149-153 IEEE Int. Conference on Microelectronic Test Structures (ICMTS) 6, 149-153 1993 英語 公開

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タイトル言語:
講演・口頭発表等
タイトル タイトル(日本語) タイトル(英語) 会議名 会議名(日本語) 会議名(英語) 主催者 主催者(日本語) 主催者(英語) 開催年月日 記述言語 会議種別 公開
プラズマプロセスにおける欠陥形成過程のモデリングと予測[招待あり] プラズマプロセスにおける欠陥形成過程のモデリングと予測 [招待あり] 第206回応用物理学会シリコンテクノロジー分科会研究会 第206回応用物理学会シリコンテクノロジー分科会研究会 2018/02/09 日本語 公開講演、セミナー、チュートリアル、講習、講義 公開
Defect Generation in Si substrates during Plasma Processing[招待あり] Defect Generation in Si substrates during Plasma Processing [招待あり] Defect Generation in Si substrates during Plasma Processing [招待あり] 17th International Workshop on Junction Technology 2017 17th International Workshop on Junction Technology 2017 17th International Workshop on Junction Technology 2017 2017/06/02 英語 口頭発表(招待・特別) 公開
Model prediction of stochastic effects of plasma-induced damage in advanced electronic devices[招待あり] Model prediction of stochastic effects of plasma-induced damage in advanced electronic devices [招待あり] Model prediction of stochastic effects of plasma-induced damage in advanced electronic devices [招待あり] 6th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors 6th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors 6th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors 2017/05/24 英語 口頭発表(招待・特別) 公開
Impacts of plasma process-induced damage on MOSFET parameter variability and reliability[招待あり] Impacts of plasma process-induced damage on MOSFET parameter variability and reliability [招待あり] Impacts of plasma process-induced damage on MOSFET parameter variability and reliability [招待あり] The 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis The 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis The 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis 2015/10/07 英語 口頭発表(招待・特別) 公開
Modeling of Plasma‐induced Damage in Advanced Transistors in ULSI Circuits[招待あり] Modeling of Plasma‐induced Damage in Advanced Transistors in ULSI Circuits [招待あり] Modeling of Plasma‐induced Damage in Advanced Transistors in ULSI Circuits [招待あり] Semicon Korea - S4. Plasma Science and Etching Technology Semicon Korea - S4. Plasma Science and Etching Technology Semicon Korea - S4. Plasma Science and Etching Technology SEMI SEMI SEMI 2015/02/05 英語 口頭発表(招待・特別) 公開
Modeling of plasma-induced damage during the etching of ultimately-scaled transistors in ULSI circuits—A model prediction of damage in three dimensional structures—[招待あり] Modeling of plasma-induced damage during the etching of ultimately-scaled transistors in ULSI circuits—A model prediction of damage in three dimensional structures— [招待あり] Modeling of plasma-induced damage during the etching of ultimately-scaled transistors in ULSI circuits—A model prediction of damage in three dimensional structures— [招待あり] 67th Annual Gaseous Electronics Conference 67th Annual Gaseous Electronics Conference 67th Annual Gaseous Electronics Conference American Physical Society American Physical Society American Physical Society 2014/11/04 英語 口頭発表(招待・特別) 公開
Modeling as a powerful tool for understanding surface damage during plasma processing of materials[招待あり] Modeling as a powerful tool for understanding surface damage during plasma processing of materials [招待あり] Modeling as a powerful tool for understanding surface damage during plasma processing of materials [招待あり] Plasma Etch and Strip in Microtechnology (PESM) Plasma Etch and Strip in Microtechnology (PESM) Plasma Etch and Strip in Microtechnology (PESM) IMEC IMEC IMEC 2013/03/15 英語 口頭発表(招待・特別) 公開
High-k MOSFET performance degradation by plasma process-induced charging damage[招待あり] High-k MOSFET performance degradation by plasma process-induced charging damage [招待あり] High-k MOSFET performance degradation by plasma process-induced charging damage [招待あり] IEEE International Integrated Reliability Workshop IEEE International Integrated Reliability Workshop IEEE International Integrated Reliability Workshop IEEE IEEE IEEE 2012/10 英語 公開
Modeling of Parameter Fluctuation Induced by Plasma Process Damage in Metal-Oxide-Semiconductor Field-Effect Transistors[招待あり] Modeling of Parameter Fluctuation Induced by Plasma Process Damage in Metal-Oxide-Semiconductor Field-Effect Transistors [招待あり] Modeling of Parameter Fluctuation Induced by Plasma Process Damage in Metal-Oxide-Semiconductor Field-Effect Transistors [招待あり] 19th Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), pp. 1-4 19th Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), pp. 1-4 19th Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), pp. 1-4 IEEK, IEICE IEEK, IEICE IEEK, IEICE 2011 英語 口頭発表(招待・特別) 公開
Modeling of Plasma-Induced Damage and Its Impacts on Parameter Variations in Advanced Electronic Devices[招待あり] Modeling of Plasma-Induced Damage and Its Impacts on Parameter Variations in Advanced Electronic Devices [招待あり] Modeling of Plasma-Induced Damage and Its Impacts on Parameter Variations in Advanced Electronic Devices [招待あり] AVS 57th International Symposium & Exhibition, PS-WeM9 AVS 57th International Symposium & Exhibition, PS-WeM9 AVS 57th International Symposium & Exhibition, PS-WeM9 American Vacuum Society American Vacuum Society American Vacuum Society 2010 英語 口頭発表(招待・特別) 公開
Plasma-induced damage and its impacts on the reliability of advanced semiconductor devices[招待あり] Plasma-induced damage and its impacts on the reliability of advanced semiconductor devices [招待あり] Plasma-induced damage and its impacts on the reliability of advanced semiconductor devices [招待あり] Proc. The 6th Int. Conf. Reactive Plasmas (ICRP) / 23rd Symp. Plasma Process (SPP) Proc. The 6th Int. Conf. Reactive Plasmas (ICRP) / 23rd Symp. Plasma Process (SPP) Proc. The 6th Int. Conf. Reactive Plasmas (ICRP) / 23rd Symp. Plasma Process (SPP) The Japan Society of Applied Physics The Japan Society of Applied Physics The Japan Society of Applied Physics 2006 英語 口頭発表(招待・特別) 公開
Plasma-Induced Damage & Its Impact on Device Reliability[招待あり] Plasma-Induced Damage & Its Impact on Device Reliability [招待あり] Plasma-Induced Damage & Its Impact on Device Reliability [招待あり] IEEE-International Conference on Integrated Circuit Design & Technology (ICICDT) IEEE-International Conference on Integrated Circuit Design & Technology (ICICDT) IEEE-International Conference on Integrated Circuit Design & Technology (ICICDT) IEEE IEEE IEEE 2005 英語 口頭発表(招待・特別) 公開
Reliability Concerns of Plasma Process Induced Oxide Charging Damage in MOS Devices[招待あり] Reliability Concerns of Plasma Process Induced Oxide Charging Damage in MOS Devices [招待あり] Reliability Concerns of Plasma Process Induced Oxide Charging Damage in MOS Devices [招待あり] Semiconductor Equipment and Materials International (SEMI) Technology Symposium 97 Semiconductor Equipment and Materials International (SEMI) Technology Symposium 97 Semiconductor Equipment and Materials International (SEMI) Technology Symposium 97 1997 日本語 口頭発表(招待・特別) 公開

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タイトル言語:
書籍等出版物
著者 著者(日本語) 著者(英語) タイトル タイトル(日本語) タイトル(英語) 出版社 出版社(日本語) 出版社(英語) 出版年月 記述言語 担当区分 公開
江利口 浩二 江利口 浩二 真空科学ハンドブック 真空科学ハンドブック 株式会社コロナ社(日本真空学会 編) 株式会社コロナ社(日本真空学会 編) 2018/02 分担執筆 公開
江利口 浩二 江利口 浩二 プラズマプロセス技術 プラズマプロセス技術 森北出版株式会社 森北出版株式会社 2017 分担執筆 公開
江利口 浩二 江利口 浩二 プラズマプロセスの新しい応用 プラズマプロセスの新しい応用 ケミカルエンジニヤリング ケミカルエンジニヤリング 2013 分担執筆 公開
江利口 浩二 江利口 浩二 Koji Eriguchi Molecular Dynamics – Studies of Synthetic and Biological Macromolecules Molecular Dynamics – Studies of Synthetic and Biological Macromolecules Molecular Dynamics – Studies of Synthetic and Biological Macromolecules InTech InTech InTech 2012 英語 分担執筆 公開
K. Eriguchi, M. Kamei, K. Okada, H. Ohta, K. Ono K. Eriguchi, M. Kamei, K. Okada, H. Ohta, K. Ono K. Eriguchi, M. Kamei, K. Okada, H. Ohta, K. Ono Emerging Technologies and Circuits", Lecture Notes in Electrical Engineering Emerging Technologies and Circuits", Lecture Notes in Electrical Engineering Emerging Technologies and Circuits", Lecture Notes in Electrical Engineering Springer Springer Springer 2010 英語 分担執筆 公開
江利口 浩二 江利口 浩二 半導体プロセスにおけるチャージング・ダメージ 半導体プロセスにおけるチャージング・ダメージ リアライズ社 リアライズ社 1996 分担執筆 公開
江利口 浩二 江利口 浩二 ロジックLSI技術の革新 ロジックLSI技術の革新 サイエンスフォーラム社 サイエンスフォーラム社 1995 分担執筆 公開
タイトル言語:
学術賞等
賞の名称(日本語) 賞の名称(英語) 授与組織名(日本語) 授与組織名(英語) 年月
2009年ドライプロセスシンポジウム最優秀論文賞 The 32nd International Symposium on Dry Process Best Paper Award 応用物理学会 2010
2011年度 応用物理学会優秀論文賞 応用物理学会 2011
第9回(2010)プラズマエレクトロニクス(PE)賞 応用物理学会 2011/03/
2015年ドライプロセスシンポジウム論文賞 DPS Paper Award 2015 応用物理学会 2015/11/05
外部資金:競争的資金・科学研究費補助金
種別 代表/分担 テーマ(日本語) テーマ(英語) 期間
NEDO受託研究 代表 SiO2と比較したHigh-k MOSFETのプラズマ処理による信頼性劣化の解析 2006〜2007
基盤研究(B) 代表 ナノ領域誘電率解析手法を用いたプラズマ・固相界面改質プロセスの研究開発 2008〜2010
基盤研究(B) 代表 統合型誘電率設計手法を用いた極低消費電力素子のナノ材料プロセスの研究開発 2011〜2013
挑戦的萌芽研究 代表 誘電率変調構造を有する有機系新機能素子を目指したプラズマ表面反応制御の研究 2013〜2015
新学術領域研究(研究領域提案型) 分担 プラズマと薄膜表面・界面の階層的複合反応制御による次世代ナノ加工技術の構築 2009〜2013
科学研究費基盤研究(B) 分担 ナノスケールのプラズマ微細加工技術開発のためのプラズマ・固体表面相互作用の研究 2009〜2011
挑戦的萌芽研究 代表 誘電率変調構造を有する有機系新機能素子を目指したプラズマ表面反応制御の研究 (平成26年度分) 2014/04/01〜2015/03/31
基盤研究(B) 代表 イオンエネルギー確率分布関数制御型プラズマによる窒化ホウ素薄膜の組成制御の研究 2015/04/01〜2017/03/31
基盤研究(B) 代表 イオンエネルギー確率分布関数制御型プラズマによる窒化ホウ素薄膜の組成制御の研究 (平成27年度分) 2015/04/01〜2016/03/31
挑戦的萌芽研究 代表 誘電率変調構造を有する有機系新機能素子を目指したプラズマ表面反応制御の研究 (平成27年度分) 2015/04/01〜2016/03/31
挑戦的萌芽研究 代表 確率過程モデルにもとづくナノ構造体における欠陥制御型プロセス設計手法の研究 (平成28年度分) 2016/04/01〜2017/03/31
基盤研究(B) 代表 イオンエネルギー確率分布関数制御型プラズマによる窒化ホウ素薄膜の組成制御の研究 (平成28年度分) 2016/04/01〜2017/03/31
挑戦的萌芽研究 代表 確率過程モデルにもとづくナノ構造体における欠陥制御型プロセス設計手法の研究 (平成29年度分) 2017/04/01〜2018/03/31
基盤研究(B) 代表 イオンエネルギー確率分布関数制御型プラズマによる窒化ホウ素薄膜の組成制御の研究 (平成29年度分) 2017/04/01〜2018/03/31
挑戦的研究(萌芽) 分担 ゆらぎの確率過程を用いたマイクロ流体デバイス内の現象予測と信頼性評価技術の開発 2017〜2018/03/31
挑戦的萌芽研究 代表 確率過程モデルにもとづくナノ構造体における欠陥制御型プロセス設計手法の研究 (平成30年度分) 2018/04/01〜2019/03/31

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外部資金:競争的資金・科学研究費補助金以外
制度名 代表者名 研究課題(日本語) 研究課題(英語) 期間
共同研究(株式会社半導体理工学研究センター) 江利口浩二 プラズマプロセスによるダメージ層形成メカニズムの解明と抑制技術に関する研究 2006〜2008
共同研究(株式会社半導体理工学研究センター) 江利口浩二 高感度プラズマダメージ定量解析とデバイス性能劣化モデリングに関する研究 2009〜2011
共同研究(株式会社半導体理工学研究センター) 江利口浩二 3次元構造デバイスにおけるプラズマ誘起欠陥形成過程ゆらぎと特性バラツキ増大モデルに関する研究 2013/08/01〜2014/07/31
担当科目
講義名(日本語) 講義名(英語) 開講期 学部/研究科 年度
初修物理学A Elementary Course of Physics A 前期 全学共通科目 2011/04〜2012/03
電磁気学続論 Advanced Course of Electromagnetism 前期 全学共通科目 2011/04〜2012/03
推進基礎論(宇) 後期 工学部 2011/04〜2012/03
推進工学特論 前期 工学研究科 2011/04〜2012/03
マイクロプロセス・材料工学 前期 工学研究科 2011/04〜2012/03
電離気体工学セミナー 後期 工学研究科 2011/04〜2012/03
初修物理学A Elementary Course of Physics A 前期 全学共通科目 2012/04〜2013/03
推進基礎論 Fundamentals of Aeroapace Propulsion 後期 工学部 2012/04〜2013/03
推進工学特論 Propulsion Engineering, Adv. 前期 工学研究科 2012/04〜2013/03
マイクロプロセス・材料工学 Microprocess and Micromaterial Engineering 前期 工学研究科 2012/04〜2013/03
電磁気学続論 Advanced Course of Electromagnetism 前期 全学共通科目 2012/04〜2013/03
電離気体工学セミナー Seminar on Engineering Science of Ionized Gases 後期 工学研究科 2012/04〜2013/03
推進基礎論 Fundamentals of Aeroapace Propulsion 後期 工学部 2013/04〜2014/03
マイクロプロセス・材料工学 Microprocess and Micromaterial Engineering 前期 工学研究科 2013/04〜2014/03
推進工学特論 Propulsion Engineering, Adv. 前期 工学研究科 2013/04〜2014/03
電離気体工学セミナー Seminar on Engineering Science of Ionized Gases 後期 工学研究科 2013/04〜2014/03
電磁気学続論 Advanced Course of Electromagnetism 前期 全学共通科目 2013/04〜2014/03
推進基礎論 Fundamentals of Aeroapace Propulsion 後期 工学部 2014/04〜2015/03
マイクロプロセス・材料工学 Microprocess and Micromaterial Engineering 前期 工学研究科 2014/04〜2015/03
推進工学特論 Propulsion Engineering, Adv. 前期 工学研究科 2014/04〜2015/03
電離気体工学セミナー Seminar on Engineering Science of Ionized Gases 後期 工学研究科 2014/04〜2015/03
電磁気学続論 Advanced Course of Electromagnetism 前期 全学共通科目 2014/04〜2015/03
推進基礎論 Fundamentals of Aeroapace Propulsion 後期 工学部 2015/04〜2016/03
推進工学特論 Propulsion Engineering, Adv. 前期 工学研究科 2015/04〜2016/03
マイクロプロセス・材料工学 Microprocess and Micromaterial Engineering 前期 工学研究科 2015/04〜2016/03
電磁気学続論 Advanced Course of Electromagnetism 前期 全学共通科目 2015/04〜2016/03
電離気体工学セミナー Seminar on Engineering Science of Ionized Gases 後期 工学研究科 2015/04〜2016/03
推進基礎論 Fundamentals of Aeroapace Propulsion 後期 工学部 2016/04〜2017/03
推進工学特論 Propulsion Engineering, Adv. 前期 工学研究科 2016/04〜2017/03
マイクロプロセス・材料工学 Microprocess and Micromaterial Engineering 前期 工学研究科 2016/04〜2017/03
電磁気学続論 Advanced Course of Electromagnetism 前期 全学共通科目 2016/04〜2017/03
電離気体工学セミナー Seminar on Engineering Science of Ionized Gases 後期 工学研究科 2016/04〜2017/03
推進基礎論 Fundamentals of Aeroapace Propulsion 後期 工学部 2017/04〜2018/03
推進工学特論 Propulsion Engineering, Adv. 後期 工学研究科 2017/04〜2018/03
マイクロプロセス・材料工学 Microprocess and Micromaterial Engineering 前期 工学研究科 2017/04〜2018/03
熱統計力学 Thermodynamics and Statistical Mechanics 前期 工学部 2017/04〜2018/03
電磁気学続論 Advanced Course of Electromagnetism 前期 全学共通科目 2017/04〜2018/03
電離気体工学セミナー Seminar on Engineering Science of Ionized Gases 後期 工学研究科 2017/04〜2018/03
推進基礎論 Fundamentals of Aeroapace Propulsion 後期 工学部 2018/04〜2019/03
推進工学特論 Propulsion Engineering, Adv. 後期 工学研究科 2018/04〜2019/03
マイクロプロセス・材料工学 Microprocess and Micromaterial Engineering 前期 工学研究科 2018/04〜2019/03
熱統計力学 Thermodynamics and Statistical Mechanics 前期 工学部 2018/04〜2019/03
特別研究1 Graduation Thesis1 前期集中 工学部 2018/04〜2019/03
特別研究1 Graduation Thesis1 後期集中 工学部 2018/04〜2019/03
特別研究2 Graduation Thesis2 前期集中 工学部 2018/04〜2019/03
特別研究2 Graduation Thesis2 後期集中 工学部 2018/04〜2019/03
研究論文 Master's Thesis 通年 工学研究科 2018/04〜2019/03
航空宇宙工学実験1 Engineering Laboratory in Aeronautics and Astronautics 1 前期 工学部 2018/04〜2019/03
航空宇宙工学実験2 Engineering Laboratory in Aeronautics and Astronautics 2 後期 工学部 2018/04〜2019/03
航空宇宙工学演義 Engineering Exercise in Aeronautics and Astronautics 前期 工学部 2018/04〜2019/03
航空宇宙工学特別実験及び演習第一 Experiments and Exercises in Aeronautics and Astronautics I 通年 工学研究科 2018/04〜2019/03
航空宇宙工学特別実験及び演習第二 Experiments and Exercises in Aeronautics and Astronautics II 通年 工学研究科 2018/04〜2019/03
電磁気学続論 Advanced Course of Electromagnetism 前期 全学共通科目 2018/04〜2019/03
電離気体工学セミナー Seminar on Engineering Science of Ionized Gases 後期 工学研究科 2018/04〜2019/03
推進基礎論 Fundamentals of Aeroapace Propulsion 後期 工学部 2019/04〜2020/03
推進工学特論 Propulsion Engineering, Adv. 後期 工学研究科 2019/04〜2020/03
熱統計力学 Thermodynamics and Statistical Mechanics 前期 工学部 2019/04〜2020/03
研究論文 Master's Thesis 通年集中 工学研究科 2019/04〜2020/03
航空宇宙工学実験1 Engineering Laboratory in Aeronautics and Astronautics 1 前期 工学部 2019/04〜2020/03
航空宇宙工学実験2 Engineering Laboratory in Aeronautics and Astronautics 2 後期 工学部 2019/04〜2020/03
航空宇宙工学演義 Engineering Exercise in Aeronautics and Astronautics 前期 工学部 2019/04〜2020/03
航空宇宙工学特別実験及び演習第一 Experiments and Exercises in Aeronautics and Astronautics I 通年集中 工学研究科 2019/04〜2020/03
航空宇宙工学特別実験及び演習第二 Experiments and Exercises in Aeronautics and Astronautics II 通年集中 工学研究科 2019/04〜2020/03
電磁気学続論 Advanced Course of Electromagnetism 前期 全学共通科目 2019/04〜2020/03
電離気体工学セミナー Seminar on Engineering Science of Ionized Gases 後期 工学研究科 2019/04〜2020/03

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指導学生の受賞
受賞した学生名 賞の名称 授与組織名 年月
松田朝彦 32nd Dry Process Symposium, Young Researcher Award 応用物理学会 2011
津田博隆 33rd Dry Process Symposium, Young Researcher Award 応用物理学会 2012
吉川侑汰 第44回(2018年春季)応用物理学会講演奨励賞 応用物理学会 2018/03/19
久山智弘 応用物理学会関西支部 第6回関西奨励賞 応用物理学会関西支部 2018/03/07
久山智弘 応用物理学会関西支部 平成29年度第3回講演会 ポスター賞(最優秀賞) 応用物理学会関西支部 2018/02/23
吉川侑汰 応用物理学会関西支部 平成29年度第3回講演会 ポスター賞(優秀賞) 応用物理学会関西支部 2018/02/23
樋口智哉 第54回日本航空宇宙学会 関西・中部支部合同秋季大会 関西支部学生賞 日本航空宇宙学会 2017/11/11
吉川侑汰 39th Dry Process Symposium, Young Researcher Award 応用物理学会 2018/11/13
部局運営(役職等)
役職名 期間
航空宇宙工学専攻長 2018/04/01〜2019/03/31
工学研究科工学研究倫理委員会 委員 2019/04/01〜2021/03/31
学会活動:学会役員歴
学会名(日本語) 学会名(英語) 役職名(日本語) 役職名(英語) 期間
Symposium on Plasma- and Process-Induced Damage Committee (1999–2002), Conference Chair (2003) 1999〜2003
Silicon Nanoelectronics Workshop Program committee 1999〜1999
電気学会 誘電体薄膜集積技術調査専門委員 2000〜2005
Int. Conf. Solid State Device and Materials Executive committee 2004〜2004
IEEE International Electron Device Meeting CMOS and Interconnect Reliability subcommittee member 2004〜2005
IEEE International Conference on IC Design and Technology Subcommittee (2004–), Conference Chair (2009), General Chair (2010), Tutorial Chair (2014, 2015), Secretary (2016-2018) 2004〜
IEEE International Reliability Physics Symposium subcommittee, Process Integration subcommittee Chair (2009), Management committee–Asia Liaison (2011–2012), –Secretary (2013), –Workshop chair (2014), –A/V chair (2015), –Presentation chair (2016), –Publicity-Asia (2017), –Registration chair (2018) 2007〜
Dry Process Symposium Program committee, Publication Chair (2010), Executive committee (2011–2012, 2015) 2007〜
応用物理学会 プラズマエレクトロニクス分科会 幹事 2007〜2008
Int. Workshop on Dielectric Thin Films for Future Electron Devices, Science and Technology Program committee, Publication Chair (2011), Program committee (2013, 2015) 2008〜
Plasma Etch and Strip in Microelectronics workshop International program committee 2008〜
日本航空宇宙学会 関西支部 幹事 2008〜2010
日本真空協会 関西支部 幹事 2009〜2012
応用物理学会 関西支部 幹事 2010〜2011
半導体先端テクノロジーズ 合同TEG技術会議委員 2000〜2002
電気学会 RF-MEMSワイヤレス通信応用調査専門委員 2011〜2013
日本学術振興会 プラズマ材料科学第153委員会委員 2014〜
応用物理学会 関西支部 幹事 2014〜
応用物理学会 シリコンテクノロジー分科会 幹事(会計) 2017/04/01〜2019/03/31
日本航空宇宙学会 関西支部 幹事 2019〜2020

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