中村 康一

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Name(Kanji/Kana/Abecedarium Latinum)
中村 康一/ナカムラ コウイチ/Koichi Nakamura
Primary department(Org1/Job title)
Center for the Promotion of Interdisciplinary Education and Research (C-PiER)/Program-Specific Associate Professor
E-mail address
E-mail address
koichi @ cpier.kyoto-u.ac.jp
Affiliated academic organization(s) (Japanese)
Organization name(Japanese) Organization name(English)
日本化学会 Chemical Society of Japan
応用物理学会 Japan Society of Applied Physics
日本物理学会 Physical Society of Japan
分子科学会 Japan Society for Molecular Science
日本材料学会 Society of Materials Science, Japan
電気学会 Institute of Electrical Engineers of Japan
Academic degree
Field(Japanese) Field(English) University(Japanese) University(English) Method
修士(工学) 京都大学
博士(工学) 京都大学
Research Topics
(Japanese)
量子化学・量子物理学を用いたナノデバイス材料の物性解析と反応設計
(English)
Analysis of properties and design of reactions for nanodevice materials in terms of quantum chemistry and physics
Overview of your research
(Japanese)
非経験的電子状態計算より得られる半導体・誘電体ナノデバイス材料の電子構造に基づいて、ピエゾ抵抗物性や誘電物性、熱電変換特性、反応性などを解析する新しい理論の構築を展開している。また、ナノデバイス材料の合成やデバイスプロセスにおける化学反応解析も行っている。
(English)
Theoretical analysis of dielectric, piezoresistive, and thermoelectric properties in nanodevice materials, and chemical reactions in micro/nano material systems based on the first-principles electronic-state calculation.
Fields of research (key words)
Key words(Japanese) Key words(English)
量子化学 Quantum Chemistry
量子材料学 Quantum Materials Science
電子状態理論 Theory of Electronic State
ナノデバイス Nanodevices
半導体 Semiconductors
誘電体 Dielectrics
熱電変換 Thermoelectricity
Fields of research (kaken code)
Kaken code
Nano structural science
Nano materials/nano bioscience
Micro/nanodevice
Physical chemistry
Functional materials/device
Organic industrial material
Inorganic industrial material
Polymer/textile materials
Published Papers
Author Author(Japanese) Author(English) Title Title(Japanese) Title(English) Bibliography Bibliography(Japanese) Bibliography(English) Publication date Refereed paper Language Publishing type Disclose
M. S. El-Asfoury; M. N. A. Nasr; K. Nakamura; A. Abd El-Moneim M. S. El-Asfoury; M. N. A. Nasr; K. Nakamura; A. Abd El-Moneim M. S. El-Asfoury; M. N. A. Nasr; K. Nakamura; A. Abd El-Moneim Structural and Thermoelectric Properties of Bi<sub>85</sub>Sb<sub>15</sub> Prepared by Non-equal Channel Angular Extrusion Structural and Thermoelectric Properties of Bi<sub>85</sub>Sb<sub>15</sub> Prepared by Non-equal Channel Angular Extrusion Structural and Thermoelectric Properties of Bi<sub>85</sub>Sb<sub>15</sub> Prepared by Non-equal Channel Angular Extrusion Journal of Electronic Materials, 46 Journal of Electronic Materials, 46 Journal of Electronic Materials, 46 2017/09 Refereed English Disclose to all
K. Nakamura K. Nakamura K. Nakamura First-principles simulation on Seebeck coefficient in silicon nanowires First-principles simulation on Seebeck coefficient in silicon nanowires First-principles simulation on Seebeck coefficient in silicon nanowires Japanese Journal of Applied Physics, 56, 6S1, 06GH04-1-06GH04-7 Japanese Journal of Applied Physics, 56, 6S1, 06GH04-1-06GH04-7 Japanese Journal of Applied Physics, 56, 6S1, 06GH04-1-06GH04-7 2017/06 Refereed English Disclose to all
A. M. Nasser; H. M. Elbery; H. N. Anwar; I. K. Basha; H. A. Elnaggar; K. Nakamura; A. Abd El-Moneim A. M. Nasser; H. M. Elbery; H. N. Anwar; I. K. Basha; H. A. Elnaggar; K. Nakamura; A. Abd El-Moneim A. M. Nasser; H. M. Elbery; H. N. Anwar; I. K. Basha; H. A. Elnaggar; K. Nakamura; A. Abd El-Moneim A Study of Promoters Effect on Fe on Reduced Graphene Oxide Catalyst Performance in Fischer-Tropsch Synthesis System A Study of Promoters Effect on Fe on Reduced Graphene Oxide Catalyst Performance in Fischer-Tropsch Synthesis System A Study of Promoters Effect on Fe on Reduced Graphene Oxide Catalyst Performance in Fischer-Tropsch Synthesis System Key Engineering Materials, 735, 143-147 Key Engineering Materials, 735, 143-147 Key Engineering Materials, 735, 143-147 2017/05 Refereed English Disclose to all
M. A. Mansour; A. Abd El-Moneim; K. Nakamura M. A. Mansour; A. Abd El-Moneim; K. Nakamura M. A. Mansour; A. Abd El-Moneim; K. Nakamura Effect of Copper Addition on Mechanical Properties of Nanostructured Pb<sub>1-x</sub>Cu<sub>x</sub>Te Thermoelectric Alloy Systems by Nanoindentation Effect of Copper Addition on Mechanical Properties of Nanostructured Pb<sub>1-x</sub>Cu<sub>x</sub>Te Thermoelectric Alloy Systems by Nanoindentation Effect of Copper Addition on Mechanical Properties of Nanostructured Pb<sub>1-x</sub>Cu<sub>x</sub>Te Thermoelectric Alloy Systems by Nanoindentation Key Engineering Materials, 735, 205-209 Key Engineering Materials, 735, 205-209 Key Engineering Materials, 735, 205-209 2017/05 Refereed English Disclose to all
K. Nakamura K. Nakamura K. Nakamura First-Principles Simulation on Thermoelectric Properties in Low-Dimensional Materials First-Principles Simulation on Thermoelectric Properties in Low-Dimensional Materials First-Principles Simulation on Thermoelectric Properties in Low-Dimensional Materials Solid State Phenomena, 258, 77-80 Solid State Phenomena, 258, 77-80 Solid State Phenomena, 258, 77-80 2017/01 Refereed English Disclose to all
K. Nakamura 中村康一 K. Nakamura Quantum Confinement and Piezoresistivity Simulation in 3C-SiC Nanosheet 3C-SiCナノシートにおける量子閉じ込め効果とピエゾ抵抗シミュレーション Quantum Confinement and Piezoresistivity Simulation in 3C-SiC Nanosheet IEEJ Transactions on Sensors and Micromachines, 136, 11, 465-472 電気学会論文誌. E, センサ・マイクロマシン準部門誌, 136, 11, 465-472 IEEJ Transactions on Sensors and Micromachines, 136, 11, 465-472 2016/11 Refereed Japanese Disclose to all
M. K. Gouda; K. Nakamura; M. A. H. Gepreel M. K. Gouda; K. Nakamura; M. A. H. Gepreel M. K. Gouda; K. Nakamura; M. A. H. Gepreel Effect of Mn-Content on the Deformation Behavior of Binary Ti-Mn Alloys Effect of Mn-Content on the Deformation Behavior of Binary Ti-Mn Alloys Effect of Mn-Content on the Deformation Behavior of Binary Ti-Mn Alloys Key Engineering Materials, 705, 214-218 Key Engineering Materials, 705, 214-218 Key Engineering Materials, 705, 214-218 2016/08 Refereed English Disclose to all
K. Nakamura K. Nakamura K. Nakamura First-principles simulation on Seebeck coefficient in silicon and silicon carbide nanosheets First-principles simulation on Seebeck coefficient in silicon and silicon carbide nanosheets First-principles simulation on Seebeck coefficient in silicon and silicon carbide nanosheets Japanese Journal of Applied Physics, 55, 6S1, 06GJ07-1-06GJ07-8 Japanese Journal of Applied Physics, 55, 6S1, 06GJ07-1-06GJ07-8 Japanese Journal of Applied Physics, 55, 6S1, 06GJ07-1-06GJ07-8 2016/06 Refereed English Disclose to all
M. S. El-Asfoury; M. N. A. Nasr; K. Nakamura; A. Abd El-Moneim M. S. El-Asfoury; M. N. A. Nasr; K. Nakamura; A. Abd El-Moneim M. S. El-Asfoury; M. N. A. Nasr; K. Nakamura; A. Abd El-Moneim Thermoelectric power factor performance of Bi<sub>85</sub>Sb<sub>15</sub>/graphene composite Thermoelectric power factor performance of Bi<sub>85</sub>Sb<sub>15</sub>/graphene composite Thermoelectric power factor performance of Bi<sub>85</sub>Sb<sub>15</sub>/graphene composite Japanese Journal of Applied Physics, 55, 4, 045802-1-045802-5 Japanese Journal of Applied Physics, 55, 4, 045802-1-045802-5 Japanese Journal of Applied Physics, 55, 4, 045802-1-045802-5 2016/04 Refereed English Disclose to all
K. Nakamura K. Nakamura K. Nakamura First-principles analysis on Seebeck coefficient in zinc oxide nanowires for thermoelectric devices First-principles analysis on Seebeck coefficient in zinc oxide nanowires for thermoelectric devices First-principles analysis on Seebeck coefficient in zinc oxide nanowires for thermoelectric devices IOP Conference Series: Materials Science and Engineering, 108, 012040-1-012-040-9 IOP Conference Series: Materials Science and Engineering, 108, 012040-1-012-040-9 IOP Conference Series: Materials Science and Engineering, 108, 012040-1-012-040-9 2016/03 Refereed English Disclose to all
S. Sayed; M. Gamil; A. M. R. Fath El-Bab; K. Nakamura; T. Tsuchiya; O. Tabata; A. Abd El-Moneim S. Sayed; M. Gamil; A. M. R. Fath El-Bab; K. Nakamura; T. Tsuchiya; O. Tabata; A. Abd El-Moneim S. Sayed; M. Gamil; A. M. R. Fath El-Bab; K. Nakamura; T. Tsuchiya; O. Tabata; A. Abd El-Moneim Graphene film development on flexible substrate using a new technique: temperature dependency of gauge factor for graphene-based strain sensors Graphene film development on flexible substrate using a new technique: temperature dependency of gauge factor for graphene-based strain sensors Graphene film development on flexible substrate using a new technique: temperature dependency of gauge factor for graphene-based strain sensors Sensor Review, 36, 2, 140-147 Sensor Review, 36, 2, 140-147 Sensor Review, 36, 2, 140-147 2016/02 Refereed English Disclose to all
H.-P. Phan; D. V. Dao; K. Nakamura; S. Dimitrijev; N.-T. Nguyen H.-P. Phan; D. V. Dao; K. Nakamura; S. Dimitrijev; N.-T. Nguyen H.-P. Phan; D. V. Dao; K. Nakamura; S. Dimitrijev; N.-T. Nguyen The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review IEEE Journal of Microelectromechanical System, 24, 6, 1663-1677 IEEE Journal of Microelectromechanical System, 24, 6, 1663-1677 IEEE Journal of Microelectromechanical System, 24, 6, 1663-1677 2015/09 Refereed English Disclose to all
M. K. Gouda; K. Nakamura; M. A. H. Gepreel M. K. Gouda; K. Nakamura; M. A. H. Gepreel M. K. Gouda; K. Nakamura; M. A. H. Gepreel First-principles study on the effect of alloying elements on the elastic deformation response in beta-titanium alloys First-principles study on the effect of alloying elements on the elastic deformation response in beta-titanium alloys First-principles study on the effect of alloying elements on the elastic deformation response in beta-titanium alloys Journal of Applied Physics, 117, 21, 214905-1-214905-7 Journal of Applied Physics, 117, 21, 214905-1-214905-7 Journal of Applied Physics, 117, 21, 214905-1-214905-7 2015/06 Refereed English Research paper(scientific journal) Disclose to all
K. Nakamura K. Nakamura K. Nakamura First-principles simulation on wire dependence of piezoresistivity in zinc oxide nanowires First-principles simulation on wire dependence of piezoresistivity in zinc oxide nanowires First-principles simulation on wire dependence of piezoresistivity in zinc oxide nanowires Japanese Journal of Applied Physics, 54, 6S1, 06FJ11-1-06FJ11-7 Japanese Journal of Applied Physics, 54, 6S1, 06FJ11-1-06FJ11-7 Japanese Journal of Applied Physics, 54, 6S1, 06FJ11-1-06FJ11-7 2015/06 Refereed English Research paper(scientific journal) Disclose to all
K. Nakamura K. Nakamura K. Nakamura Electronic State and Piezoresistivity Analysis of Zinc Oxide Nanowires for Force Sensing Devices Electronic State and Piezoresistivity Analysis of Zinc Oxide Nanowires for Force Sensing Devices Electronic State and Piezoresistivity Analysis of Zinc Oxide Nanowires for Force Sensing Devices Key Engineering Materials, 644, 16-21 Key Engineering Materials, 644, 16-21 Key Engineering Materials, 644, 16-21 2015 Refereed English Research paper(scientific journal) Disclose to all
M. Gamil; O. Tabata; K. Nakamura; A. M. R. Fath El-Bab; A. Abd El-Moneim M. Gamil; O. Tabata; K. Nakamura; A. M. R. Fath El-Bab; A. Abd El-Moneim M. Gamil; O. Tabata; K. Nakamura; A. M. R. Fath El-Bab; A. Abd El-Moneim Investigation of a new high sensitive micro-electromechanical strain gauge sensor based on graphene piezoresistivity Investigation of a new high sensitive micro-electromechanical strain gauge sensor based on graphene piezoresistivity Investigation of a new high sensitive micro-electromechanical strain gauge sensor based on graphene piezoresistivity Key Engineering Materials, 605, 207-210 Key Engineering Materials, 605, 207-210 Key Engineering Materials, 605, 207-210 2014 Refereed English Research paper(scientific journal) Disclose to all
M. Gamil; H. Nageh, I. Bkrey; S. Sayed; A. M. R. Fath El-Bab; K. Nakamura; O. Tabata; A. Abd El-Moneim M. Gamil; H. Nageh, I. Bkrey; S. Sayed; A. M. R. Fath El-Bab; K. Nakamura; O. Tabata; A. Abd El-Moneim M. Gamil; H. Nageh, I. Bkrey; S. Sayed; A. M. R. Fath El-Bab; K. Nakamura; O. Tabata; A. Abd El-Moneim Graphene-Based Strain Gauge on a Flexible Substrate Graphene-Based Strain Gauge on a Flexible Substrate Graphene-Based Strain Gauge on a Flexible Substrate Sensors and Materials, 26, 9, 699-709 Sensors and Materials, 26, 9, 699-709 Sensors and Materials, 26, 9, 699-709 2014 Refereed English Research paper(scientific journal) Disclose to all
M. Gamil; K. Nakamura; A. M. R. Fath El-Bab; O. Tabata; A. Abd El-Moneim M. Gamil; K. Nakamura; A. M. R. Fath El-Bab; O. Tabata; A. Abd El-Moneim M. Gamil; K. Nakamura; A. M. R. Fath El-Bab; O. Tabata; A. Abd El-Moneim Simulation of Graphene Piezoresistivity Based on Density Functional Calculations Simulation of Graphene Piezoresistivity Based on Density Functional Calculations Simulation of Graphene Piezoresistivity Based on Density Functional Calculations Modeling and Numerical Simulation of Material Science, 3, 117-123 Modeling and Numerical Simulation of Material Science, 3, 117-123 Modeling and Numerical Simulation of Material Science, 3, 117-123 2013/10 Refereed English Research paper(scientific journal) Disclose to all
K. Nakamura; T. Toriyama; S. Sugiyama K. Nakamura; T. Toriyama; S. Sugiyama K. Nakamura; T. Toriyama; S. Sugiyama First-principles simulation on piezoresistivity in alpha and beta silicon carbide nanosheets First-principles simulation on piezoresistivity in alpha and beta silicon carbide nanosheets First-principles simulation on piezoresistivity in alpha and beta silicon carbide nanosheets Japanese Journal of Applied Physics, 50, 6, 06GE05-1-06GE05-6 Japanese Journal of Applied Physics, 50, 6, 06GE05-1-06GE05-6 Japanese Journal of Applied Physics, 50, 6, 06GE05-1-06GE05-6 2011/06 Refereed English Disclose to all
K. Nakamura; T. Toriyama; S. Sugiyama K. Nakamura; T. Toriyama; S. Sugiyama K. Nakamura; T. Toriyama; S. Sugiyama First-principles simulation on thickness dependence of piezoresistance effect in silicon nanosheets First-principles simulation on thickness dependence of piezoresistance effect in silicon nanosheets First-principles simulation on thickness dependence of piezoresistance effect in silicon nanosheets Japanese Journal of Applied Physics, 49, 6, 06GH01-1-06GH01-6 Japanese Journal of Applied Physics, 49, 6, 06GH01-1-06GH01-6 Japanese Journal of Applied Physics, 49, 6, 06GH01-1-06GH01-6 2010/06 Refereed English Disclose to all
S. Sugiyama; T. Toriyama; K. Nakamura; D.V. Dao 杉山進、鳥山寿之、中村康一、ダオベトズン S. Sugiyama; T. Toriyama; K. Nakamura; D.V. Dao Evaluation and Analysis of Physical Properties of Nanomaterials for Highly Sensitive Mechanical Sencing Devices 高感度機械量センサのためのナノ材料の物性の測定と解析 Evaluation and Analysis of Physical Properties of Nanomaterials for Highly Sensitive Mechanical Sencing Devices IEEJ Transactions on Sensors and Micromachines, 130, 5, 146-151 電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society, 130, 5, 146-151 IEEJ Transactions on Sensors and Micromachines, 130, 5, 146-151 2010/05 Refereed Japanese Disclose to all
K. Nakamura; T. Toriyama; S. Sugiyama K. Nakamura; T. Toriyama; S. Sugiyama K. Nakamura; T. Toriyama; S. Sugiyama First-principles simulation on piezoresistive properties in doped silicon nanosheets First-principles simulation on piezoresistive properties in doped silicon nanosheets First-principles simulation on piezoresistive properties in doped silicon nanosheets IEEJ Transactions on Electrical and Electronic Engineering, 5, 2, 157-163 IEEJ Transactions on Electrical and Electronic Engineering, 5, 2, 157-163 IEEJ Transactions on Electrical and Electronic Engineering, 5, 2, 157-163 2010/03 Refereed English Disclose to all
D.V. Dao; K. Nakamura; T.T. Bui; S. Sugiyama D.V. Dao; K. Nakamura; T.T. Bui; S. Sugiyama D.V. Dao; K. Nakamura; T.T. Bui; S. Sugiyama Micro/nano-mechanical sensors and actuators based on SOI-MEMS technology Micro/nano-mechanical sensors and actuators based on SOI-MEMS technology Micro/nano-mechanical sensors and actuators based on SOI-MEMS technology Advances in Natural Sciences: Nanoscience and Nanotechnology, 1, 1, 013001-1-013001-10 Advances in Natural Sciences: Nanoscience and Nanotechnology, 1, 1, 013001-1-013001-10 Advances in Natural Sciences: Nanoscience and Nanotechnology, 1, 1, 013001-1-013001-10 2010/01 Refereed English Disclose to all
D.V. Dao; T.T. Bui; K. Nakamura; V.T. Dau; T. Yamada; K. Hata; S. Sugiyama D.V. Dao; T.T. Bui; K. Nakamura; V.T. Dau; T. Yamada; K. Hata; S. Sugiyama D.V. Dao; T.T. Bui; K. Nakamura; V.T. Dau; T. Yamada; K. Hata; S. Sugiyama Towards highly sensitive strain sensing based on nanostructured materials Towards highly sensitive strain sensing based on nanostructured materials Towards highly sensitive strain sensing based on nanostructured materials Advances in Natural Sciences: Nanoscience and Nanotechnology, 1, 4, 045012-1-045012-8 Advances in Natural Sciences: Nanoscience and Nanotechnology, 1, 4, 045012-1-045012-8 Advances in Natural Sciences: Nanoscience and Nanotechnology, 1, 4, 045012-1-045012-8 2010 Refereed English Disclose to all
S. Sugiyama; T. Toriyama; K. Nakamura; D.V. Dao S. Sugiyama; T. Toriyama; K. Nakamura; D.V. Dao S. Sugiyama; T. Toriyama; K. Nakamura; D.V. Dao Evaluation and analysis of physical properties of nanomaterials for highly sensitive mechanical sensing devices Evaluation and analysis of physical properties of nanomaterials for highly sensitive mechanical sensing devices Evaluation and analysis of physical properties of nanomaterials for highly sensitive mechanical sensing devices IEEJ Transactions on Sensors and Micromachines, 130, 5, 146-151 IEEJ Transactions on Sensors and Micromachines, 130, 5, 146-151 IEEJ Transactions on Sensors and Micromachines, 130, 5, 146-151 2010 Refereed English Disclose to all
K. Nakamura; Y. Isono; T. Toriyama; S. Sugiyama K. Nakamura; Y. Isono; T. Toriyama; S. Sugiyama K. Nakamura; Y. Isono; T. Toriyama; S. Sugiyama Simulation of piezoresistivity in n -type single-crystal silicon on the basis of the first-principles band structure Simulation of piezoresistivity in n -type single-crystal silicon on the basis of the first-principles band structure Simulation of piezoresistivity in n -type single-crystal silicon on the basis of the first-principles band structure Physical Review B - Condensed Matter and Materials Physics, 80, 4, 045205-1-045205-11 Physical Review B - Condensed Matter and Materials Physics, 80, 4, 045205-1-045205-11 Physical Review B - Condensed Matter and Materials Physics, 80, 4, 045205-1-045205-11 2009/07 Refereed English Disclose to all
K. Nakamura; Y. Isono; T. Toriyama; S. Sugiyama K. Nakamura; Y. Isono; T. Toriyama; S. Sugiyama K. Nakamura; Y. Isono; T. Toriyama; S. Sugiyama First-principles simulation on orientation dependence of piezoresistance properties in silicon nanowires First-principles simulation on orientation dependence of piezoresistance properties in silicon nanowires First-principles simulation on orientation dependence of piezoresistance properties in silicon nanowires Japanese Journal of Applied Physics, 48, 6 PART 2, 06FG09-1-06FG09-5 Japanese Journal of Applied Physics, 48, 6 PART 2, 06FG09-1-06FG09-5 Japanese Journal of Applied Physics, 48, 6 PART 2, 06FG09-1-06FG09-5 2009/06 Refereed English Disclose to all
K. Nakamura; Y. Isono; T. Toriyama K. Nakamura; Y. Isono; T. Toriyama K. Nakamura; Y. Isono; T. Toriyama First-principles study on piezoresistance effect in silicon nanowires First-principles study on piezoresistance effect in silicon nanowires First-principles study on piezoresistance effect in silicon nanowires Japanese Journal of Applied Physics, 47, 6, 5132-5138 Japanese Journal of Applied Physics, 47, 6, 5132-5138 Japanese Journal of Applied Physics, 47, 6, 5132-5138 2008/06 Refereed English Disclose to all
K. Doi; K. Fujitani; N. Kadowaki; K. Nakamura; A. Tachibana; T. Hattori K. Doi; K. Fujitani; N. Kadowaki; K. Nakamura; A. Tachibana; T. Hattori K. Doi; K. Fujitani; N. Kadowaki; K. Nakamura; A. Tachibana; T. Hattori Structures and electronic states of gadolinium oxide clusters Structures and electronic states of gadolinium oxide clusters Structures and electronic states of gadolinium oxide clusters Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 44, 8, 6115-6123 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 44, 8, 6115-6123 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 44, 8, 6115-6123 2005/08 Refereed English Disclose to all
N. Ibuta; F. Sagara; K. Doi; K. Nakamura; A. Tachibana; Y. Ishihara; K. Suzuki N. Ibuta; F. Sagara; K. Doi; K. Nakamura; A. Tachibana; Y. Ishihara; K. Suzuki N. Ibuta; F. Sagara; K. Doi; K. Nakamura; A. Tachibana; Y. Ishihara; K. Suzuki Reaction processes of germane molecules with catalytic water Reaction processes of germane molecules with catalytic water Reaction processes of germane molecules with catalytic water Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 44, 6A, 4133-4141 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 44, 6A, 4133-4141 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 44, 6A, 4133-4141 2005/06 Refereed English Disclose to all
K. Nakamura; K. Doi; K. Fujitani; A. Tachibana K. Nakamura; K. Doi; K. Fujitani; A. Tachibana K. Nakamura; K. Doi; K. Fujitani; A. Tachibana Theoretical study on first-principles dielectric properties of silicate compounds Theoretical study on first-principles dielectric properties of silicate compounds Theoretical study on first-principles dielectric properties of silicate compounds Physical Review B - Condensed Matter and Materials Physics, 71, 4, 045332-1-054332-8 Physical Review B - Condensed Matter and Materials Physics, 71, 4, 045332-1-054332-8 Physical Review B - Condensed Matter and Materials Physics, 71, 4, 045332-1-054332-8 2005/01 Refereed English Disclose to all
K. Nakamura; N. Ibuta; F. Sagara; A. Tachibana; Y. Ishihara; K. Suzuki K. Nakamura; N. Ibuta; F. Sagara; A. Tachibana; Y. Ishihara; K. Suzuki K. Nakamura; N. Ibuta; F. Sagara; A. Tachibana; Y. Ishihara; K. Suzuki Analysis of behavior in GeH<sub>4</sub> dissociation by quantum chemical calculations Analysis of behavior in GeH<sub>4</sub> dissociation by quantum chemical calculations Analysis of behavior in GeH<sub>4</sub> dissociation by quantum chemical calculations Shinku/Journal of the Vacuum Society of Japan, 48, 1, 13-17 Shinku/Journal of the Vacuum Society of Japan, 48, 1, 13-17 Shinku/Journal of the Vacuum Society of Japan, 48, 1, 13-17 2005 Refereed English Disclose to all
T. Okada; K. Doi; K. Nakamura; A. Tachibana T. Okada; K. Doi; K. Nakamura; A. Tachibana T. Okada; K. Doi; K. Nakamura; A. Tachibana Quantum chemical study on substituent effect of gas-phase reactions in III-V nitride semiconductor crystal growth Quantum chemical study on substituent effect of gas-phase reactions in III-V nitride semiconductor crystal growth Quantum chemical study on substituent effect of gas-phase reactions in III-V nitride semiconductor crystal growth Physica Status Solidi (B) Basic Research, 241, 12, 2744-2748 Physica Status Solidi (B) Basic Research, 241, 12, 2744-2748 Physica Status Solidi (B) Basic Research, 241, 12, 2744-2748 2004/10 Refereed English Disclose to all
K. Doi; N. Higashimaki; Y. Kawakami; K. Nakamura; A. Tachibana K. Doi; N. Higashimaki; Y. Kawakami; K. Nakamura; A. Tachibana K. Doi; N. Higashimaki; Y. Kawakami; K. Nakamura; A. Tachibana First-principle study on electronic properties of gallium nitride and aluminium nitride nanowires First-principle study on electronic properties of gallium nitride and aluminium nitride nanowires First-principle study on electronic properties of gallium nitride and aluminium nitride nanowires Physica Status Solidi (B) Basic Research, 241, 12, 2806-2810 Physica Status Solidi (B) Basic Research, 241, 12, 2806-2810 Physica Status Solidi (B) Basic Research, 241, 12, 2806-2810 2004/10 Refereed English Disclose to all
Y. Kawakami; Y. Nojima; K. Doi; K. Nakamura; A. Tachibana Y. Kawakami; Y. Nojima; K. Doi; K. Nakamura; A. Tachibana Y. Kawakami; Y. Nojima; K. Doi; K. Nakamura; A. Tachibana First-principle study on structures and electronic properties of aluminum nanowire wrapped in carbon nanotube First-principle study on structures and electronic properties of aluminum nanowire wrapped in carbon nanotube First-principle study on structures and electronic properties of aluminum nanowire wrapped in carbon nanotube Electrochimica Acta, 50, 2-3 SPEC. ISS., 739-744 Electrochimica Acta, 50, 2-3 SPEC. ISS., 739-744 Electrochimica Acta, 50, 2-3 SPEC. ISS., 739-744 2004 Refereed English Disclose to all
T. Makita; K. Doi; K. Nakamura; A. Tachibana T. Makita; K. Doi; K. Nakamura; A. Tachibana T. Makita; K. Doi; K. Nakamura; A. Tachibana Structure and electronic properties of aluminum nanowires Structure and electronic properties of aluminum nanowires Structure and electronic properties of aluminum nanowires Journal of Chemical Physics, 119, 1, 538-546 Journal of Chemical Physics, 119, 1, 538-546 Journal of Chemical Physics, 119, 1, 538-546 2003/07/01 Refereed English Disclose to all
T. Makita; K. Nakamura; A. Tachibana; H. Masusaki; K. Matsumoto; Y. Ishihara T. Makita; K. Nakamura; A. Tachibana; H. Masusaki; K. Matsumoto; Y. Ishihara T. Makita; K. Nakamura; A. Tachibana; H. Masusaki; K. Matsumoto; Y. Ishihara Quantum chemical mechanism of heterogeneous reaction between trichlorosilane and adsorbed water Quantum chemical mechanism of heterogeneous reaction between trichlorosilane and adsorbed water Quantum chemical mechanism of heterogeneous reaction between trichlorosilane and adsorbed water Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 42, 7A, 4540-4541 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 42, 7A, 4540-4541 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 42, 7A, 4540-4541 2003/07 Refereed English Disclose to all
S. Yoshida; K. Doi; K. Nakamura; A. Tachibana S. Yoshida; K. Doi; K. Nakamura; A. Tachibana S. Yoshida; K. Doi; K. Nakamura; A. Tachibana Theoretical study on the initial processes of nitridation of silicon thin film Theoretical study on the initial processes of nitridation of silicon thin film Theoretical study on the initial processes of nitridation of silicon thin film Applied Surface Science, 216, 1-4, 141-148 Applied Surface Science, 216, 1-4, 141-148 Applied Surface Science, 216, 1-4, 141-148 2003/06/30 Refereed English Disclose to all
K. Doi; K. Nakamura; A. Tachibana K. Doi; K. Nakamura; A. Tachibana K. Doi; K. Nakamura; A. Tachibana First-principle theoretical study on the electronic properties of SiO<sub>2</sub> models with hydrogenated impurities and charges First-principle theoretical study on the electronic properties of SiO<sub>2</sub> models with hydrogenated impurities and charges First-principle theoretical study on the electronic properties of SiO<sub>2</sub> models with hydrogenated impurities and charges Applied Surface Science, 216, 1-4, 463-470 Applied Surface Science, 216, 1-4, 463-470 Applied Surface Science, 216, 1-4, 463-470 2003/06/30 Refereed English Disclose to all
K. Doi; K. Iguchi; K. Nakamura; A. Tachibana K. Doi; K. Iguchi; K. Nakamura; A. Tachibana K. Doi; K. Iguchi; K. Nakamura; A. Tachibana First-principle dynamical electronic characteristics of Al electromigration in the bulk, surface, and grain boundary First-principle dynamical electronic characteristics of Al electromigration in the bulk, surface, and grain boundary First-principle dynamical electronic characteristics of Al electromigration in the bulk, surface, and grain boundary Physical Review B - Condensed Matter and Materials Physics, 67, 11, 115124-1-115124-14 Physical Review B - Condensed Matter and Materials Physics, 67, 11, 115124-1-115124-14 Physical Review B - Condensed Matter and Materials Physics, 67, 11, 115124-1-115124-14 2003/03 Refereed English Disclose to all
K. Hasegawa; K. Doi; K. Nakamura; A. Tachibana K. Hasegawa; K. Doi; K. Nakamura; A. Tachibana K. Hasegawa; K. Doi; K. Nakamura; A. Tachibana Wavepacket dynamics and quantum mechanical energy densities in the quartet N<sub>2</sub><sup>+</sup> + O<sub>2</sub> system Wavepacket dynamics and quantum mechanical energy densities in the quartet N<sub>2</sub><sup>+</sup> + O<sub>2</sub> system Wavepacket dynamics and quantum mechanical energy densities in the quartet N<sub>2</sub><sup>+</sup> + O<sub>2</sub> system Molecular Physics, 101, 1-2, 295-307 Molecular Physics, 101, 1-2, 295-307 Molecular Physics, 101, 1-2, 295-307 2003 Refereed English Disclose to all
Y. Kawakami; T. Kikura; K. Doi; K. Nakamura; A. Tachibana Y. Kawakami; T. Kikura; K. Doi; K. Nakamura; A. Tachibana Y. Kawakami; T. Kikura; K. Doi; K. Nakamura; A. Tachibana First-principle study on the reactions and dynamical electronic characteristics of electromigration on aluminum nanowires First-principle study on the reactions and dynamical electronic characteristics of electromigration on aluminum nanowires First-principle study on the reactions and dynamical electronic characteristics of electromigration on aluminum nanowires Materials Science Forum, 426-4, 2399-2404 Materials Science Forum, 426-4, 2399-2404 Materials Science Forum, 426-4, 2399-2404 2003 Refereed English Disclose to all
S. Hotta; K. Doi; K. Nakamura; A. Tachibana S. Hotta; K. Doi; K. Nakamura; A. Tachibana S. Hotta; K. Doi; K. Nakamura; A. Tachibana High-spin electronic interaction of small lithium and sodium cluster formation in the excited states High-spin electronic interaction of small lithium and sodium cluster formation in the excited states High-spin electronic interaction of small lithium and sodium cluster formation in the excited states Journal of Chemical Physics, 117, 1, 142-152 Journal of Chemical Physics, 117, 1, 142-152 Journal of Chemical Physics, 117, 1, 142-152 2002/07/01 Refereed English Disclose to all
M. Ikenaga; K. Nakamura; A. Tachibana; K. Matsumoto M. Ikenaga; K. Nakamura; A. Tachibana; K. Matsumoto M. Ikenaga; K. Nakamura; A. Tachibana; K. Matsumoto Quantum chemical study of gas-phase reactions of trimethylaluminium and triethylaluminium with ammonia in III-V nitride semiconductor crystal growth Quantum chemical study of gas-phase reactions of trimethylaluminium and triethylaluminium with ammonia in III-V nitride semiconductor crystal growth Quantum chemical study of gas-phase reactions of trimethylaluminium and triethylaluminium with ammonia in III-V nitride semiconductor crystal growth Journal of Crystal Growth, 237, 936-941 Journal of Crystal Growth, 237, 936-941 Journal of Crystal Growth, 237, 936-941 2002/04 Refereed English Disclose to all
S. Murata; M. Ikenaga; K. Nakamura; A. Tachibana; K. Matsumoto S. Murata; M. Ikenaga; K. Nakamura; A. Tachibana; K. Matsumoto S. Murata; M. Ikenaga; K. Nakamura; A. Tachibana; K. Matsumoto First-Principle Theoretical Study on Epitaxial Crystal Growth of GaN First-Principle Theoretical Study on Epitaxial Crystal Growth of GaN First-Principle Theoretical Study on Epitaxial Crystal Growth of GaN Physica Status Solidi (A) Applied Research, 188, 2, 579-582 Physica Status Solidi (A) Applied Research, 188, 2, 579-582 Physica Status Solidi (A) Applied Research, 188, 2, 579-582 2001/11/23 Refereed English Disclose to all
K. Nakamura; T. Hayashi; A. Tachibana; K. Matsumoto K. Nakamura; T. Hayashi; A. Tachibana; K. Matsumoto K. Nakamura; T. Hayashi; A. Tachibana; K. Matsumoto Regional density functional theory for crystal growth in GaN Regional density functional theory for crystal growth in GaN Regional density functional theory for crystal growth in GaN Journal of Crystal Growth, 221, 765-771 Journal of Crystal Growth, 221, 765-771 Journal of Crystal Growth, 221, 765-771 2000/12 Refereed English Disclose to all
K. Nakamura; O. Makino; A. Tachibana; K. Matsumoto K. Nakamura; O. Makino; A. Tachibana; K. Matsumoto K. Nakamura; O. Makino; A. Tachibana; K. Matsumoto Quantum chemical study of parasitic reaction in III-V nitride semiconductor crystal growth Quantum chemical study of parasitic reaction in III-V nitride semiconductor crystal growth Quantum chemical study of parasitic reaction in III-V nitride semiconductor crystal growth Journal of Organometallic Chemistry, 611, 1-2, 514-524 Journal of Organometallic Chemistry, 611, 1-2, 514-524 Journal of Organometallic Chemistry, 611, 1-2, 514-524 2000/10/06 Refereed English Disclose to all
A. Tachibana; K. Nakamura A. Tachibana; K. Nakamura A. Tachibana; K. Nakamura Quantum chemical study of aluminum CVD reaction for titanium nitride (111) surface with terminal fluorine Quantum chemical study of aluminum CVD reaction for titanium nitride (111) surface with terminal fluorine Quantum chemical study of aluminum CVD reaction for titanium nitride (111) surface with terminal fluorine Journal of Molecular Structure: THEOCHEM, 506, 273-286 Journal of Molecular Structure: THEOCHEM, 506, 273-286 Journal of Molecular Structure: THEOCHEM, 506, 273-286 2000/07/14 Refereed English Disclose to all
O. Makino; K. Nakamura; A. Tachibana; H. Tokunaga; N. Akutsu; K. Matsumoto O. Makino; K. Nakamura; A. Tachibana; H. Tokunaga; N. Akutsu; K. Matsumoto O. Makino; K. Nakamura; A. Tachibana; H. Tokunaga; N. Akutsu; K. Matsumoto Quantum chemical mechanism in parasitic reaction of AlGaN alloys formation Quantum chemical mechanism in parasitic reaction of AlGaN alloys formation Quantum chemical mechanism in parasitic reaction of AlGaN alloys formation Applied Surface Science, 159, 374-379 Applied Surface Science, 159, 374-379 Applied Surface Science, 159, 374-379 2000/06 Refereed English Disclose to all
K. Sakata; T. Sato; K. Nakamura; A. Osamura; A. Tachibana K. Sakata; T. Sato; K. Nakamura; A. Osamura; A. Tachibana K. Sakata; T. Sato; K. Nakamura; A. Osamura; A. Tachibana Quantum chemical mechanism of oxidation of the hydrogen-terminated Si surface by oxygen anion Quantum chemical mechanism of oxidation of the hydrogen-terminated Si surface by oxygen anion Quantum chemical mechanism of oxidation of the hydrogen-terminated Si surface by oxygen anion Applied Surface Science, 159, 392-397 Applied Surface Science, 159, 392-397 Applied Surface Science, 159, 392-397 2000/06 Refereed English Disclose to all
A. Tachibana; K. Nakamura; K. Sakata; T. Morisaki A. Tachibana; K. Nakamura; K. Sakata; T. Morisaki A. Tachibana; K. Nakamura; K. Sakata; T. Morisaki Application of the regional density functional theory: The chemical potential inequality in the HeH<sup>+</sup> system Application of the regional density functional theory: The chemical potential inequality in the HeH<sup>+</sup> system Application of the regional density functional theory: The chemical potential inequality in the HeH<sup>+</sup> system International Journal of Quantum Chemistry, 74, 6, 669-679 International Journal of Quantum Chemistry, 74, 6, 669-679 International Journal of Quantum Chemistry, 74, 6, 669-679 1999 Refereed English Disclose to all
A. Tachibana; K. Nakamura; T. Yano; Y. Sugiyama; S. Tanimura A. Tachibana; K. Nakamura; T. Yano; Y. Sugiyama; S. Tanimura A. Tachibana; K. Nakamura; T. Yano; Y. Sugiyama; S. Tanimura Quantum Chemical Study of Ion-Molecule Reactions in N<sub>2</sub><sup>+</sup> + O<sub>2</sub> System Quantum Chemical Study of Ion-Molecule Reactions in N<sub>2</sub><sup>+</sup> + O<sub>2</sub> System Quantum Chemical Study of Ion-Molecule Reactions in N<sub>2</sub><sup>+</sup> + O<sub>2</sub> System Journal of Physical Chemistry A, 103, 29, 5749-5757 Journal of Physical Chemistry A, 103, 29, 5749-5757 Journal of Physical Chemistry A, 103, 29, 5749-5757 1999 Refereed English Disclose to all
A. Tachibana; K. Nakamura A. Tachibana; K. Nakamura A. Tachibana; K. Nakamura Quantum chemical study of low pressure gas phase cationic polymerization reactions in the Ti<sup>+</sup> and isobutylene system Quantum chemical study of low pressure gas phase cationic polymerization reactions in the Ti<sup>+</sup> and isobutylene system Quantum chemical study of low pressure gas phase cationic polymerization reactions in the Ti<sup>+</sup> and isobutylene system Journal of Molecular Structure: THEOCHEM, 461-462, 269-281 Journal of Molecular Structure: THEOCHEM, 461-462, 269-281 Journal of Molecular Structure: THEOCHEM, 461-462, 269-281 1999 Refereed English Disclose to all
A. Tachibana; S. Kawauchi; K. Nakamura; H. Inaba A. Tachibana; S. Kawauchi; K. Nakamura; H. Inaba A. Tachibana; S. Kawauchi; K. Nakamura; H. Inaba Density functional theory of chemical reactivity indices in some ion-molecule reaction systems Density functional theory of chemical reactivity indices in some ion-molecule reaction systems Density functional theory of chemical reactivity indices in some ion-molecule reaction systems International Journal of Quantum Chemistry, 57, 4, 673-682 International Journal of Quantum Chemistry, 57, 4, 673-682 International Journal of Quantum Chemistry, 57, 4, 673-682 1996 Refereed English Disclose to all
A. Tachibana; K. Nakamura A. Tachibana; K. Nakamura A. Tachibana; K. Nakamura Regional density functional theory for the initiation reaction of anionic polymerization Regional density functional theory for the initiation reaction of anionic polymerization Regional density functional theory for the initiation reaction of anionic polymerization Journal of the American Chemical Society, 117, 12, 3605-3610 Journal of the American Chemical Society, 117, 12, 3605-3610 Journal of the American Chemical Society, 117, 12, 3605-3610 1995 Refereed English Disclose to all

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Title language:
Misc
Author Author(Japanese) Author(English) Title Title(Japanese) Title(English) Bibliography Bibliography(Japanese) Bibliography(English) Publication date Refereed paper Language Publishing type Disclose
K. Nakamura K. Nakamura K. Nakamura Design of Highly Efficient Thermoelectric Nanowires Based on First-Principles Electronic Structure Design of Highly Efficient Thermoelectric Nanowires Based on First-Principles Electronic Structure Design of Highly Efficient Thermoelectric Nanowires Based on First-Principles Electronic Structure 29th International Microprocesses and Nanotechnology Conference 29th International Microprocesses and Nanotechnology Conference 29th International Microprocesses and Nanotechnology Conference 2016/11 Refereed Disclose to all
M. S. El-Asfoury; K. Nakamura; A. Abd El-Moneim M. S. El-Asfoury; K. Nakamura; A. Abd El-Moneim M. S. El-Asfoury; K. Nakamura; A. Abd El-Moneim First-Principles Simulation on Thermoelectric Properties in Bi-Sb System First-Principles Simulation on Thermoelectric Properties in Bi-Sb System First-Principles Simulation on Thermoelectric Properties in Bi-Sb System 6th International Conference on Materials and Applications for Sensors and Transducers 6th International Conference on Materials and Applications for Sensors and Transducers 6th International Conference on Materials and Applications for Sensors and Transducers 2016/09 Refereed Disclose to all
K. Nakamura K. Nakamura K. Nakamura First-Principles Simulation on Thermoelectric Properties in Low-Dimensional Materials First-Principles Simulation on Thermoelectric Properties in Low-Dimensional Materials First-Principles Simulation on Thermoelectric Properties in Low-Dimensional Materials 8th International Conference on Materials Structure and Micromechanics of Fracture 8th International Conference on Materials Structure and Micromechanics of Fracture 8th International Conference on Materials Structure and Micromechanics of Fracture 2016/06 Refereed Disclose to all
K. Nakamura K. Nakamura K. Nakamura First-Principles Simulation on Sensing Properties of Silicon Carbide and Zinc Oxide Nanowires First-Principles Simulation on Sensing Properties of Silicon Carbide and Zinc Oxide Nanowires First-Principles Simulation on Sensing Properties of Silicon Carbide and Zinc Oxide Nanowires 2015 International Chemical Congress of Pacific Basin Societies 2015 International Chemical Congress of Pacific Basin Societies 2015 International Chemical Congress of Pacific Basin Societies 2015/12 Refereed Disclose to all
K. Nakamura K. Nakamura K. Nakamura First-Principles Simulation on Seebeck Coefficient in Semiconducting Nanomaterials First-Principles Simulation on Seebeck Coefficient in Semiconducting Nanomaterials First-Principles Simulation on Seebeck Coefficient in Semiconducting Nanomaterials 28th International Microprocesses and Nanotechnology Conference 28th International Microprocesses and Nanotechnology Conference 28th International Microprocesses and Nanotechnology Conference 2015/11 Refereed Disclose to all
K. Nakamura K. Nakamura K. Nakamura First-Principles Analysis on Seebeck Coefficient in Zinc Oxide Nanowires for Thermoelectric Devices First-Principles Analysis on Seebeck Coefficient in Zinc Oxide Nanowires for Thermoelectric Devices First-Principles Analysis on Seebeck Coefficient in Zinc Oxide Nanowires for Thermoelectric Devices 5th International Conference on Materials and Applications for Sensors and Transducers 5th International Conference on Materials and Applications for Sensors and Transducers 5th International Conference on Materials and Applications for Sensors and Transducers 2015/09 Refereed Disclose to all
K. Nakamura K. Nakamura K. Nakamura First-Principles Simulation on Diameter Dependence of Piezoproperties in Zinc Oxide Nanowires First-Principles Simulation on Diameter Dependence of Piezoproperties in Zinc Oxide Nanowires First-Principles Simulation on Diameter Dependence of Piezoproperties in Zinc Oxide Nanowires 27th International Microprocesses and Nanotechnology Conference 27th International Microprocesses and Nanotechnology Conference 27th International Microprocesses and Nanotechnology Conference 2014/11 Refereed Disclose to all
K. Nakamura K. Nakamura K. Nakamura Electronic State and Piezoresistivity Analysis of Zinc Oxide Nanowires for Force Sensing Devices Electronic State and Piezoresistivity Analysis of Zinc Oxide Nanowires for Force Sensing Devices Electronic State and Piezoresistivity Analysis of Zinc Oxide Nanowires for Force Sensing Devices 4th International Conference on Materials and Applications for Sensors and Transducers 4th International Conference on Materials and Applications for Sensors and Transducers 4th International Conference on Materials and Applications for Sensors and Transducers 2014/06 Refereed Disclose to all
M. Gamil; K. Nakamura; A. M. R. Fath El-Bab; O. Tabata; A. Abd El-Moneim M. Gamil; K. Nakamura; A. M. R. Fath El-Bab; O. Tabata; A. Abd El-Moneim M. Gamil; K. Nakamura; A. M. R. Fath El-Bab; O. Tabata; A. Abd El-Moneim First-Principles Simulation on Orientation Dependence ‎of Piezoresistivity in Graphene Nanoribbon First-Principles Simulation on Orientation Dependence ‎of Piezoresistivity in Graphene Nanoribbon First-Principles Simulation on Orientation Dependence ‎of Piezoresistivity in Graphene Nanoribbon 2nd IEEE International Conference on Engineering and Technology 2nd IEEE International Conference on Engineering and Technology 2nd IEEE International Conference on Engineering and Technology 2014/04 Refereed Disclose to all
K. Nakamura K. Nakamura K. Nakamura First-Principles Simulation on Orientation Dependence of Piezoresistivity in 3C-SiC Nanostructures First-Principles Simulation on Orientation Dependence of Piezoresistivity in 3C-SiC Nanostructures First-Principles Simulation on Orientation Dependence of Piezoresistivity in 3C-SiC Nanostructures 26th International Microprocesses and Nanotechnology Conference 26th International Microprocesses and Nanotechnology Conference 26th International Microprocesses and Nanotechnology Conference 2013/11 Refereed Disclose to all
K. Nakamura K. Nakamura K. Nakamura Modeling and First-Principles Analysis of Silicon Carbide Nanowires for Force Sensing Devices Modeling and First-Principles Analysis of Silicon Carbide Nanowires for Force Sensing Devices Modeling and First-Principles Analysis of Silicon Carbide Nanowires for Force Sensing Devices 5th International Conference on Nanotechnology in Construction 5th International Conference on Nanotechnology in Construction 5th International Conference on Nanotechnology in Construction 2013/03 Refereed Disclose to all
K. Nakamura K. Nakamura K. Nakamura Dimensional Reduction Effect on Momentum of Carrier Electrons in Nanoscale Silicon Materials Dimensional Reduction Effect on Momentum of Carrier Electrons in Nanoscale Silicon Materials Dimensional Reduction Effect on Momentum of Carrier Electrons in Nanoscale Silicon Materials 1st IEEE International Conference on Innovative Engineering Systems 1st IEEE International Conference on Innovative Engineering Systems 1st IEEE International Conference on Innovative Engineering Systems 2012/12 Refereed Disclose to all
K. Nakamura K. Nakamura K. Nakamura First-Principles Simulation on Polymorph Dependence of Piezoresistivity in Silicon Carbide Nanowires First-Principles Simulation on Polymorph Dependence of Piezoresistivity in Silicon Carbide Nanowires First-Principles Simulation on Polymorph Dependence of Piezoresistivity in Silicon Carbide Nanowires 25th International Microprocesses and Nanotechnology Conference 25th International Microprocesses and Nanotechnology Conference 25th International Microprocesses and Nanotechnology Conference 2012/11 Refereed Disclose to all
K. Nakamura K. Nakamura K. Nakamura Effect of Spin-Orbit Coupling on Piezoresistivity in p-Doped Semiconductor Bulks and Nanofilms on the Basis of First-Principles Theory Effect of Spin-Orbit Coupling on Piezoresistivity in p-Doped Semiconductor Bulks and Nanofilms on the Basis of First-Principles Theory Effect of Spin-Orbit Coupling on Piezoresistivity in p-Doped Semiconductor Bulks and Nanofilms on the Basis of First-Principles Theory 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems 2012/03 Refereed Disclose to all
K. Nakamura K. Nakamura K. Nakamura First-Principles Simulation of Pyroelectricity in Single-Domain Ferroelectric Bulks and Nanofilms First-Principles Simulation of Pyroelectricity in Single-Domain Ferroelectric Bulks and Nanofilms First-Principles Simulation of Pyroelectricity in Single-Domain Ferroelectric Bulks and Nanofilms 24th International Microprocesses and Nanotechnology Conference 24th International Microprocesses and Nanotechnology Conference 24th International Microprocesses and Nanotechnology Conference 2011/10 Refereed Disclose to all
K. Nakamura; T. Toriyama; S. Sugiyama K. Nakamura; T. Toriyama; S. Sugiyama K. Nakamura; T. Toriyama; S. Sugiyama Evaluation of piezoresistance coefficients of silicon nanosheets on the basis of first-priciples band structures Evaluation of piezoresistance coefficients of silicon nanosheets on the basis of first-priciples band structures Evaluation of piezoresistance coefficients of silicon nanosheets on the basis of first-priciples band structures Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), 436-439 Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), 436-439 Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), 436-439 2010 Refereed English Disclose to all
K. Nakamura; D.V. Dao; B.T. Tung; T. Toriyama; S. Sugiyama K. Nakamura; D.V. Dao; B.T. Tung; T. Toriyama; S. Sugiyama K. Nakamura; D.V. Dao; B.T. Tung; T. Toriyama; S. Sugiyama Piezoresistive effect in silicon nanowires - A comprehensive analysis based on first-principles calculations Piezoresistive effect in silicon nanowires - A comprehensive analysis based on first-principles calculations Piezoresistive effect in silicon nanowires - A comprehensive analysis based on first-principles calculations 20th Anniversary MHS 2009 and Micro-Nano Global COE - 2009 International Symposium on Micro-NanoMechatronics and Human Science, 38-43 20th Anniversary MHS 2009 and Micro-Nano Global COE - 2009 International Symposium on Micro-NanoMechatronics and Human Science, 38-43 20th Anniversary MHS 2009 and Micro-Nano Global COE - 2009 International Symposium on Micro-NanoMechatronics and Human Science, 38-43 2009 Refereed English Disclose to all
T.T. Bui; D.V. Dao; K. Nakamura; T. Toriyama; S. Sugiyama T.T. Bui; D.V. Dao; K. Nakamura; T. Toriyama; S. Sugiyama T.T. Bui; D.V. Dao; K. Nakamura; T. Toriyama; S. Sugiyama Characterization of the piezoresistive effect and temperature coefficient of resistance in single crystalline silicon nanowires Characterization of the piezoresistive effect and temperature coefficient of resistance in single crystalline silicon nanowires Characterization of the piezoresistive effect and temperature coefficient of resistance in single crystalline silicon nanowires 20th Anniversary MHS 2009 and Micro-Nano Global COE - 2009 International Symposium on Micro-NanoMechatronics and Human Science, 462-466 20th Anniversary MHS 2009 and Micro-Nano Global COE - 2009 International Symposium on Micro-NanoMechatronics and Human Science, 462-466 20th Anniversary MHS 2009 and Micro-Nano Global COE - 2009 International Symposium on Micro-NanoMechatronics and Human Science, 462-466 2009 Refereed English Disclose to all
K. Nakamura; Y. Isono; T. Toriyama K. Nakamura; Y. Isono; T. Toriyama K. Nakamura; Y. Isono; T. Toriyama First-Principle study on piezoresistance effect in silicon nanowires First-Principle study on piezoresistance effect in silicon nanowires First-Principle study on piezoresistance effect in silicon nanowires Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC, 268-269 Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC, 268-269 Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC, 268-269 2007 Refereed English Disclose to all
K. Doi; K. Nakamura; A. Tachibana K. Doi; K. Nakamura; A. Tachibana K. Doi; K. Nakamura; A. Tachibana Local-property analysis for modeling of gate insulator materials Local-property analysis for modeling of gate insulator materials Local-property analysis for modeling of gate insulator materials 2006 International Workshop on Nano CMOS - Proceedings, IWNC, 209-235 2006 International Workshop on Nano CMOS - Proceedings, IWNC, 209-235 2006 International Workshop on Nano CMOS - Proceedings, IWNC, 209-235 2006 Refereed English Disclose to all
Y. Kawakami; N. Higashimaki; K. Doi; K. Nakamura; A. Tachibana Y. Kawakami; N. Higashimaki; K. Doi; K. Nakamura; A. Tachibana Y. Kawakami; N. Higashimaki; K. Doi; K. Nakamura; A. Tachibana First-principle study on the structures and electronic properties of gallium nitride nanowires First-principle study on the structures and electronic properties of gallium nitride nanowires First-principle study on the structures and electronic properties of gallium nitride nanowires Physica Status Solidi C: Conferences, 7, 2318-2322 Physica Status Solidi C: Conferences, 7, 2318-2322 Physica Status Solidi C: Conferences, 7, 2318-2322 2003 Refereed English Disclose to all

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Title language:
Conference Activities & Talks
Title Title(Japanese) Title(English) Conference Conference(Japanese) Conference(English) Promotor Promotor(Japanese) Promotor(English) Date Language Assortment Disclose
First-principles simulation on piezoresistivity and thermoelectricity in transition metal dichalcogenide 遷移金属ダイカルコゲナイドのピエゾ抵抗・熱電変換に関する第一原理シミュレーション First-principles simulation on piezoresistivity and thermoelectricity in transition metal dichalcogenide 11th Annual Meeting of Japan Society for Molecular Science 第11回分子科学討論会 11th Annual Meeting of Japan Society for Molecular Science 2017/09/17 Disclose to all
Consideration of "Effective Mass Approximation" in Monolayer Graphene 単層グラフェンにおける「有効質量近似」の考察 Consideration of "Effective Mass Approximation" in Monolayer Graphene 22nd Molecular Dynamics Symposium マルチスケール材料力学シンポジウム(第22回分子動力学シンポジウム・第10回マイクロマテリアルシンポジウム) 22nd Molecular Dynamics Symposium 2017/05/26 Disclose to all
電子状態計算による低次元キャリア半導体のフォノン伝搬解析 電子状態計算による低次元キャリア半導体のフォノン伝搬解析 電子状態計算による低次元キャリア半導体のフォノン伝搬解析 第20回理論化学討論会 第20回理論化学討論会 第20回理論化学討論会 2017/05/16 Disclose to all
First-Principles Analysis and Device Design of Thermoelectric Conversion by Silicon Nanowires シリコンナノワイヤ熱電変換の第一原理解析とデバイス設計 First-Principles Analysis and Device Design of Thermoelectric Conversion by Silicon Nanowires 2015 Annual Conference, the Institute of Electrical Engineers of Japan 平成29年電気学会全国大会 2015 Annual Conference, the Institute of Electrical Engineers of Japan 2017/03/16 Disclose to all
Design of nanowire materials for enhancement of thermoelectric properties 熱電変換特性の向上に寄与するナノワイヤ材料設計 Design of nanowire materials for enhancement of thermoelectric properties 10th Annual Meeting of Japan Society for Molecular Science 第10回分子科学討論会 10th Annual Meeting of Japan Society for Molecular Science 2016/09/13 Disclose to all
<i>Ab initio</i> Approach to Thermoelectric Properties in Semiconductors 半導体熱電特性への<i>ab initio</i>アプローチ <i>Ab initio</i> Approach to Thermoelectric Properties in Semiconductors 21st Molecular Dynamics Symposium マルチスケール材料力学シンポジウム(第21回分子動力学シンポジウム・第9回マイクロマテリアルシンポジウム) 21st Molecular Dynamics Symposium 2016/05/27 Disclose to all
半導体材料の熱電変換特性よ則におけるキャリア速度の考察 半導体材料の熱電変換特性よ則におけるキャリア速度の考察 半導体材料の熱電変換特性よ則におけるキャリア速度の考察 第19回理論化学討論会 第19回理論化学討論会 第19回理論化学討論会 2016/05/23 Disclose to all
First-Principles Analysis on Thickness Dependence of Seebeck Coefficient 極薄半導体ナノシートにおけるゼーベック係数膜厚依存性の第一原理解析 First-Principles Analysis on Thickness Dependence of Seebeck Coefficient 2016 Annual Conference, the Institute of Electrical Engineers of Japan 平成28年電気学会全国大会 2016 Annual Conference, the Institute of Electrical Engineers of Japan 2016/03/18 Disclose to all
First-Principles Simulation on Piezoresistivity in Semiconducting Nanomaterials[Invited] First-Principles Simulation on Piezoresistivity in Semiconducting Nanomaterials [Invited] First-Principles Simulation on Piezoresistivity in Semiconducting Nanomaterials [Invited] Energy Materials and Nanotechnology Hong Kong meeting Energy Materials and Nanotechnology Hong Kong meeting Energy Materials and Nanotechnology Hong Kong meeting 2015/12/10 English Disclose to all
First-Principles Approach to Thermoelectric Properties in Low-Dimensional Materials First-Principles Approach to Thermoelectric Properties in Low-Dimensional Materials First-Principles Approach to Thermoelectric Properties in Low-Dimensional Materials MicRO Alliance Meeting 2015 MicRO Alliance Meeting 2015 MicRO Alliance Meeting 2015 2015/09/25 English Disclose to all
Effect of relaxation time on Seebeck coefficient in semiconducting nanomaterials 半導体ナノ材料のゼーベック係数における緩和時間の影響 Effect of relaxation time on Seebeck coefficient in semiconducting nanomaterials 9th Annual Meeting of Japan Society for Molecular Science 第9回分子科学討論会 9th Annual Meeting of Japan Society for Molecular Science 2015/09/18 Disclose to all
Partnership with Kyoto University for MSE Education and Research: Graphene-Based Nanosensors Partnership with Kyoto University for MSE Education and Research: Graphene-Based Nanosensors Partnership with Kyoto University for MSE Education and Research: Graphene-Based Nanosensors 2nd International Conference on Innovative Engineering 2nd International Conference on Innovative Engineering 2nd International Conference on Innovative Engineering 2015/05/21 English Disclose to all
Simulation of Seebeck Coefficient in Semiconductors Based on First-Principles Calculation 第一原理計算に基づく半導体のゼーベック係数シミュレーション Simulation of Seebeck Coefficient in Semiconductors Based on First-Principles Calculation 62nd JSAP Spring Meeting 第62回応用物理学会春季学術講演会 62nd JSAP Spring Meeting 2015/03/12 Disclose to all
Design and Characteristics of SiC Nanowire Piezoresistors Based on First-Principles Analysis 第一原理解析に基づくSiCナノワイヤピエゾ抵抗素子の設計と特性評価 Design and Characteristics of SiC Nanowire Piezoresistors Based on First-Principles Analysis 2014 Annual Conference, the Institute of Electrical Engineers of Japan 平成26年電気学会全国大会 2014 Annual Conference, the Institute of Electrical Engineers of Japan 2014/03/20 Disclose to all
Simulation of New Functional Materials[Invited] Simulation of New Functional Materials [Invited] Simulation of New Functional Materials [Invited] Workshop on Materials Science and Engineering in a Cooperation between National Research Centre and E-JUST Workshop on Materials Science and Engineering in a Cooperation between National Research Centre and E-JUST Workshop on Materials Science and Engineering in a Cooperation between National Research Centre and E-JUST 2014/03/05 English Disclose to all
First-Principles Analysis of Material Properties in Nanosystems First-Principles Analysis of Material Properties in Nanosystems First-Principles Analysis of Material Properties in Nanosystems Swiss-Kyoto Symposium Swiss-Kyoto Symposium Swiss-Kyoto Symposium 2013/11/21 English Disclose to all
Evaluation of Strain Gauge Factors of Silicon Carbide Nanowires on the Basis of First-Principles Band Structure[Invited] Evaluation of Strain Gauge Factors of Silicon Carbide Nanowires on the Basis of First-Principles Band Structure [Invited] Evaluation of Strain Gauge Factors of Silicon Carbide Nanowires on the Basis of First-Principles Band Structure [Invited] International Workshop on Soft and Flexible Micro/Nano System Technology International Workshop on Soft and Flexible Micro/Nano System Technology International Workshop on Soft and Flexible Micro/Nano System Technology 2013/07/12 English Disclose to all
Quantum Chemical Analysis of Electromechanical Properties in Silicon Carbide Nanowires Quantum Chemical Analysis of Electromechanical Properties in Silicon Carbide Nanowires Quantum Chemical Analysis of Electromechanical Properties in Silicon Carbide Nanowires International Symposium on Atomistic Modeling for Mechanics and Multiphysics of Materials 2013 International Symposium on Atomistic Modeling for Mechanics and Multiphysics of Materials 2013 International Symposium on Atomistic Modeling for Mechanics and Multiphysics of Materials 2013 2013/07 English Disclose to all
How to Treat Spin-Orbit Coupling in Materials 材料系におけるスピン軌道相互作用の取り扱い方 How to Treat Spin-Orbit Coupling in Materials 18th Molecular Dynamics Symposium 第18回分子動力学シンポジウム 18th Molecular Dynamics Symposium 2013/05/17 Disclose to all
First-Principles Design of MEMS Sensing Elements First-Principles Design of MEMS Sensing Elements First-Principles Design of MEMS Sensing Elements MicRO Alliance Meeting 2012 MicRO Alliance Meeting 2012 MicRO Alliance Meeting 2012 2012/06/29 English Disclose to all
First-Principles Analysis of Material Properties First-Principles Analysis of Material Properties First-Principles Analysis of Material Properties 1st Symposium on Advanced Material Sciences 2012 1st Symposium on Advanced Material Sciences 2012 1st Symposium on Advanced Material Sciences 2012 2012/03/14 English Disclose to all
First-Principles Simulation on Piezoresistivity for Silicon and Silicon Carbide Nanostructures First-Principles Simulation on Piezoresistivity for Silicon and Silicon Carbide Nanostructures First-Principles Simulation on Piezoresistivity for Silicon and Silicon Carbide Nanostructures Arab Nanotech Forum Arab Nanotech Forum Arab Nanotech Forum 2011/12/29 English Disclose to all
First-Principles Study on Momentum of Electrons in Conduction Band for Macro/Nanoscale Single-Crystal Silicon First-Principles Study on Momentum of Electrons in Conduction Band for Macro/Nanoscale Single-Crystal Silicon First-Principles Study on Momentum of Electrons in Conduction Band for Macro/Nanoscale Single-Crystal Silicon International Symposium on Atomstic Modeling for Mechanics and Multiphysics of Materials 2011 International Symposium on Atomstic Modeling for Mechanics and Multiphysics of Materials 2011 International Symposium on Atomstic Modeling for Mechanics and Multiphysics of Materials 2011 2011/07 English Disclose to all
炭化ケイ素におけるひずみ応答の結晶多形依存性シミュレーション 炭化ケイ素におけるひずみ応答の結晶多形依存性シミュレーション 第1回マルチスケールマテリアルモデリングシンポジウム(第16回分子動力学シンポジウム) 第1回マルチスケールマテリアルモデリングシンポジウム(第16回分子動力学シンポジウム) 2011/05/24 Disclose to all
第一原理バンド計算による焦電効果の考察 第一原理バンド計算による焦電効果の考察 第1回マルチスケールマテリアルモデリングシンポジウム(第16回分子動力学シンポジウム) 第1回マルチスケールマテリアルモデリングシンポジウム(第16回分子動力学シンポジウム) 2011/05/23 Oral presentation(general) Disclose to all
炭化ケイ素単結晶のピエゾ抵抗物性シミュレーション 炭化ケイ素単結晶のピエゾ抵抗物性シミュレーション 第4回分子科学討論会 第4回分子科学討論会 2010 Disclose to all
First-Principles Simulation on Piezoresistivity of Macro/Nanoscale Silicon Materials First-Principles Simulation on Piezoresistivity of Macro/Nanoscale Silicon Materials 2010 International Chemical Congress of Pacific Basin Society (PACIFICHEM2010) 2010 International Chemical Congress of Pacific Basin Society (PACIFICHEM2010) 2010 Poster presentation Disclose to all
バンド計算による低次元シリコン伝導帯の電子運動量に関する考察 バンド計算による低次元シリコン伝導帯の電子運動量に関する考察 2010年秋季第71回応用物理学会学術講演会 2010年秋季第71回応用物理学会学術講演会 2010 Disclose to all
摂動論によるシリコンのスピン-軌道相互作用解析 摂動論によるシリコンのスピン-軌道相互作用解析 第13回理論化学討論会 第13回理論化学討論会 2010 Poster presentation Disclose to all
電子状態計算による圧電物性シミュレーションの手法 電子状態計算による圧電物性シミュレーションの手法 第15回分子動力学シンポジウム 第15回分子動力学シンポジウム 2010 Poster presentation Disclose to all
バンド計算における低次元閉じ込め効果の検証と物性への影響 バンド計算における低次元閉じ込め効果の検証と物性への影響 第15回分子動力学シンポジウム 第15回分子動力学シンポジウム 2010 Disclose to all
単結晶シリコンの二次元化による電子状態とピエゾ抵抗物性の影響 単結晶シリコンの二次元化による電子状態とピエゾ抵抗物性の影響 2010年春季第57回応用物理学関係連合講演会 2010年春季第57回応用物理学関係連合講演会 2010 Disclose to all
Evaluation of Piezoresistance Coefficients of Silicon Nanosheets on the Basis of First-Principles Band Structures Evaluation of Piezoresistance Coefficients of Silicon Nanosheets on the Basis of First-Principles Band Structures 23rd IEEE International Conference on Micro Electro Mechanical Systems (MEMS2010) 23rd IEEE International Conference on Micro Electro Mechanical Systems (MEMS2010) 2010 Poster presentation Disclose to all
GaNおよび関連物質のMOCVDプロセスにおける反応量子化学 GaNおよび関連物質のMOCVDプロセスにおける反応量子化学 化学工学会 反応工学部会CVD反応分科会シンポジウム 化学工学会 反応工学部会CVD反応分科会シンポジウム 2009 Disclose to all
Characterization of the Piezoresistive Effect and Temperature Coefficient of Resistance in Single Crystalline Silicon Nanowires Characterization of the Piezoresistive Effect and Temperature Coefficient of Resistance in Single Crystalline Silicon Nanowires 2009 International Symposium on Micro-NanoMechatronics and Human Science (MHS2009) 2009 International Symposium on Micro-NanoMechatronics and Human Science (MHS2009) 2009 Disclose to all
Piezoresistive Effect in Silicon Nanowires - A Comprehensive Analysis Based on First-Principles Calculations Piezoresistive Effect in Silicon Nanowires - A Comprehensive Analysis Based on First-Principles Calculations 2009 International Symposium on Micro-NanoMechatronics and Human Science (MHS2009) 2009 International Symposium on Micro-NanoMechatronics and Human Science (MHS2009) 2009 Poster presentation Disclose to all
Dimensional Reduction Effect on Electronic States and Piezoresistivity in Nanoscale Silicon Materials Dimensional Reduction Effect on Electronic States and Piezoresistivity in Nanoscale Silicon Materials Joint Symposium on Micro/Nano Science and Technology Joint Symposium on Micro/Nano Science and Technology 2009 Disclose to all
Electronic States and Piezoresistivity in Silicon Nanosheets Electronic States and Piezoresistivity in Silicon Nanosheets 第26回「センサ・マイクロマシンと応用システム」シンポジウム 第26回「センサ・マイクロマシンと応用システム」シンポジウム 2009 Poster presentation Disclose to all
シリコンのピエゾ抵抗効果におけるスピン-軌道相互作用の影響 シリコンのピエゾ抵抗効果におけるスピン-軌道相互作用の影響 第3回分子科学討論会 第3回分子科学討論会 2009 Disclose to all
p型バルクシリコンのピエゾ抵抗係数シミュレーション p型バルクシリコンのピエゾ抵抗係数シミュレーション 2009年秋季第70回応用物理学会学術講演会 2009年秋季第70回応用物理学会学術講演会 2009 Disclose to all
ドープ半導体のピエゾ抵抗物性理論とシミュレーション ドープ半導体のピエゾ抵抗物性理論とシミュレーション 第14回分子動力学シンポジウム 第14回分子動力学シンポジウム 2009 Disclose to all
n型バルクシリコンにおけるピエゾ抵抗係数のキャリア濃度・温度依存シミュレーション n型バルクシリコンにおけるピエゾ抵抗係数のキャリア濃度・温度依存シミュレーション 2009年春季第56回応用物理学関係連合講演会 2009年春季第56回応用物理学関係連合講演会 2009 Disclose to all
First-Principles Simulation on Piezoresistive Properties in Low-Dimensional Silicon Materials First-Principles Simulation on Piezoresistive Properties in Low-Dimensional Silicon Materials 2008 International Symposium on Micro/Nano Systems Technology (ISMST2008) 2008 International Symposium on Micro/Nano Systems Technology (ISMST2008) 2008 Disclose to all
First-Principles Simulation on Orientation Dependence of Piezoresistance Properties in Silicon Nanowires First-Principles Simulation on Orientation Dependence of Piezoresistance Properties in Silicon Nanowires 21st International Microprocesses and Nanotechnology Conference (MNC2008) 21st International Microprocesses and Nanotechnology Conference (MNC2008) 2008 Poster presentation Disclose to all
シリコンナノワイヤーの電子状態とピエゾ抵抗物性予測 シリコンナノワイヤーの電子状態とピエゾ抵抗物性予測 第25回「センサ・マイクロマシンと応用システム」シンポジウム 第25回「センサ・マイクロマシンと応用システム」シンポジウム 2008 Disclose to all
バルクシリコンおよびシリコンナノワイヤーのピエゾ抵抗物性シミュレーション バルクシリコンおよびシリコンナノワイヤーのピエゾ抵抗物性シミュレーション 第2回分子科学討論会 第2回分子科学討論会 2008 Poster presentation Disclose to all
応力印加によるバルクシリコンのバンドひずみとピエゾ抵抗物性への効果 応力印加によるバルクシリコンのバンドひずみとピエゾ抵抗物性への効果 M&M2008材料力学カンファレンス M&M2008材料力学カンファレンス 2008 Disclose to all
単結晶シリコン材料のピエゾ抵抗物性シミュレーション 単結晶シリコン材料のピエゾ抵抗物性シミュレーション 日本機械学会2008年次大会 日本機械学会2008年次大会 2008 Disclose to all
第一原理計算による単結晶シリコンナノワイヤーのピエゾ抵抗係数予測 第一原理計算による単結晶シリコンナノワイヤーのピエゾ抵抗係数予測 2008年春季第55回応用物理学関係連合講演会 2008年春季第55回応用物理学関係連合講演会 2008 Disclose to all
Evaluation of Low-dimensional Band Structure in Silicon Nanowires for Ultra Small Piezoresistive Sensors by First-Principle Calculation Evaluation of Low-dimensional Band Structure in Silicon Nanowires for Ultra Small Piezoresistive Sensors by First-Principle Calculation 2008 MRS Spring Meeting 2008 MRS Spring Meeting 2008 Poster presentation Disclose to all
First-Principles Study on Piezoresistance Effect in Silicon Nanowires First-Principles Study on Piezoresistance Effect in Silicon Nanowires 20th International Microprocesses and Nanotechnology Conference (MNC2007) 20th International Microprocesses and Nanotechnology Conference (MNC2007) 2007 Poster presentation Disclose to all
シリコンナノワイヤーのピエゾ抵抗効果に関する第一原理計算 シリコンナノワイヤーのピエゾ抵抗効果に関する第一原理計算 M&M2007材料力学カンファレンス M&M2007材料力学カンファレンス 2007 Disclose to all
分子系および周期系の領域密度汎関数理論プログラム開発 分子系および周期系の領域密度汎関数理論プログラム開発 第9回理論化学討論会 第9回理論化学討論会 2005 Poster presentation Disclose to all
シリケート酸化物薄膜の誘電物性に関する第一原理シミュレーション シリケート酸化物薄膜の誘電物性に関する第一原理シミュレーション 2005年春季第52回応用物理学関係連合講演会 2005年春季第52回応用物理学関係連合講演会 2005 Disclose to all
第一原理電子状態理論による材料物性解析 第一原理電子状態理論による材料物性解析 日本材料学会 分子動力学部門委員会 日本材料学会 分子動力学部門委員会 2004 Disclose to all
First-Principle Study on Electronic Properties of Gallium Nitride and Aluminum Nitride Nanowire First-Principle Study on Electronic Properties of Gallium Nitride and Aluminum Nitride Nanowire 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004) 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004) 2004 Poster presentation Disclose to all
Quantum Chemical Study on Substituent Effect of Gas-Phase Reactions in III-V Nitride Semiconductor Crystal Growth Quantum Chemical Study on Substituent Effect of Gas-Phase Reactions in III-V Nitride Semiconductor Crystal Growth 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004) 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004) 2004 Poster presentation Disclose to all
シリコン酸窒化物薄膜の形成過程と誘電物性に関する第一原理計算 シリコン酸窒化物薄膜の形成過程と誘電物性に関する第一原理計算 極薄シリコン酸化膜の形成・評価・信頼性 第9回研究会 極薄シリコン酸化膜の形成・評価・信頼性 第9回研究会 2004 Poster presentation Disclose to all
High-κ酸化物薄膜の微視的構造と誘電物性に関する第一原理計算 High-κ酸化物薄膜の微視的構造と誘電物性に関する第一原理計算 極薄シリコン酸化膜の形成・評価・信頼性 第9回研究会 極薄シリコン酸化膜の形成・評価・信頼性 第9回研究会 2004 Poster presentation Disclose to all
III-V族窒化物結晶成長時の寄生反応におけるt-ブチル置換基効果 III-V族窒化物結晶成長時の寄生反応におけるt-ブチル置換基効果 分子構造総合討論会(2004) 分子構造総合討論会(2004) 2004 Poster presentation Disclose to all
GaNおよびAlNナノワイヤーの電子物性に関する第一原理解析 GaNおよびAlNナノワイヤーの電子物性に関する第一原理解析 分子構造総合討論会(2004) 分子構造総合討論会(2004) 2004 Poster presentation Disclose to all
First-Principle Study on Nitridation of Silicon Dioxide and Electronic Properties of Silicon Oxynitride Thin Film First-Principle Study on Nitridation of Silicon Dioxide and Electronic Properties of Silicon Oxynitride Thin Film 2004 International Workshop on Dielectric Thin Film for Future ULSI Devices (IWDTF-04) 2004 International Workshop on Dielectric Thin Film for Future ULSI Devices (IWDTF-04) 2004 Poster presentation Disclose to all
High-k酸化物周期系モデルの第一原理誘電物性に関する領域密度汎関数理論の応用計算 High-k酸化物周期系モデルの第一原理誘電物性に関する領域密度汎関数理論の応用計算 2004年春季第51回応用物理学関係連合講演会 2004年春季第51回応用物理学関係連合講演会 2004 Disclose to all
シリコン酸窒化薄膜の形成過程と誘電物性に関する量子化学計算 シリコン酸窒化薄膜の形成過程と誘電物性に関する量子化学計算 2004年春季第51回応用物理学関係連合講演会 2004年春季第51回応用物理学関係連合講演会 2004 Disclose to all
III-V族窒化物結晶成長時の寄生反応における置換基効果に対する量子化学計算 III-V族窒化物結晶成長時の寄生反応における置換基効果に対する量子化学計算 2004年春季第51回応用物理学関係連合講演会 2004年春季第51回応用物理学関係連合講演会 2004 Disclose to all
カーボンナノチューブによって囲まれたAlナノワイヤーへの水素吸着過程に関する領域密度汎関数理論の応用計算 カーボンナノチューブによって囲まれたAlナノワイヤーへの水素吸着過程に関する領域密度汎関数理論の応用計算 2004年春季第51回応用物理学関係連合講演会 2004年春季第51回応用物理学関係連合講演会 2004 Disclose to all
ペンタセン分子結晶の電気伝導性に関する電子状態計算 ペンタセン分子結晶の電気伝導性に関する電子状態計算 日本化学会第84春季年会 日本化学会第84春季年会 2004 Poster presentation Disclose to all
ジアセチルおよびその置換体の2段階励起に関する量子化学計算 ジアセチルおよびその置換体の2段階励起に関する量子化学計算 日本化学会第84春季年会 日本化学会第84春季年会 2004 Poster presentation Disclose to all
アルカリ金属クラスターの励起状態およびイオン状態における成長過程 アルカリ金属クラスターの励起状態およびイオン状態における成長過程 分子構造総合討論会(2003) 分子構造総合討論会(2003) 2003 Poster presentation Disclose to all
水触媒によるゲルマン分解反応過程に関する量子化学計算 水触媒によるゲルマン分解反応過程に関する量子化学計算 分子構造総合討論会(2003) 分子構造総合討論会(2003) 2003 Poster presentation Disclose to all
摂動論による誘電体の電場応答解析および誘電物性予測 摂動論による誘電体の電場応答解析および誘電物性予測 分子構造総合討論会(2003) 分子構造総合討論会(2003) 2003 Disclose to all
アルミニウムナノワイヤーへの水素吸着過程およびエレクトロマイグレーションに関する第一原理計算 アルミニウムナノワイヤーへの水素吸着過程およびエレクトロマイグレーションに関する第一原理計算 分子構造総合討論会(2003) 分子構造総合討論会(2003) 2003 Poster presentation Disclose to all
ゲート絶縁薄膜材料の電子物性に関する量子化学計算 ゲート絶縁薄膜材料の電子物性に関する量子化学計算 分子構造総合討論会(2003) 分子構造総合討論会(2003) 2003 Poster presentation Disclose to all
ジチオールビラジカルのスピン輸送における外部電場応答 ジチオールビラジカルのスピン輸送における外部電場応答 日本物理学会2003年秋季大会 日本物理学会2003年秋季大会 2003 Disclose to all
アルカリ金属クラスターのイオンおよび励起状態に対する基底関数依存性 アルカリ金属クラスターのイオンおよび励起状態に対する基底関数依存性 日本物理学会2003年秋季大会 日本物理学会2003年秋季大会 2003 Disclose to all
シリケート化合物の誘電物性に関する第一原理シミュレーション シリケート化合物の誘電物性に関する第一原理シミュレーション 日本物理学会2003年秋季大会 日本物理学会2003年秋季大会 2003 Poster presentation Disclose to all
III-V窒化物ナノワイヤーの電子物性制御に関する第一原理シミュレーション III-V窒化物ナノワイヤーの電子物性制御に関する第一原理シミュレーション 日本物理学会2003年秋季大会 日本物理学会2003年秋季大会 2003 Poster presentation Disclose to all
カーボンナノチューブによって囲まれたアルミニウムナノワイヤーの電子物性 カーボンナノチューブによって囲まれたアルミニウムナノワイヤーの電子物性 日本物理学会2003年秋季大会 日本物理学会2003年秋季大会 2003 Poster presentation Disclose to all
ガドリニウム酸化物に関する領域密度汎関数理論の応用計算 ガドリニウム酸化物に関する領域密度汎関数理論の応用計算 2003年秋季第64回応用物理学会学術講演会 2003年秋季第64回応用物理学会学術講演会 2003 Disclose to all
シリケート誘電体の第一原理誘電特性に関する領域密度汎関数理論の応用計算 シリケート誘電体の第一原理誘電特性に関する領域密度汎関数理論の応用計算 2003年秋季第64回応用物理学会学術講演会 2003年秋季第64回応用物理学会学術講演会 2003 Disclose to all
チオールラジカル系電子材料のスピン輸送現象に関する領域密度汎関数理論の応用計算 チオールラジカル系電子材料のスピン輸送現象に関する領域密度汎関数理論の応用計算 2003年秋季第64回応用物理学会学術講演会 2003年秋季第64回応用物理学会学術講演会 2003 Disclose to all
カーボンナノチューブによって囲まれたAl ナノワイヤーに関する領域密度汎関数理論の応用計算 カーボンナノチューブによって囲まれたAl ナノワイヤーに関する領域密度汎関数理論の応用計算 2003年秋季第64回応用物理学会学術講演会 2003年秋季第64回応用物理学会学術講演会 2003 Disclose to all
ペロブスカイト型強誘電体の誘電物性に関する量子エネルギー密度計算 ペロブスカイト型強誘電体の誘電物性に関する量子エネルギー密度計算 2003年秋季第64回応用物理学会学術講演会 2003年秋季第64回応用物理学会学術講演会 2003 Disclose to all
GaNナノワイヤーの電子物性制御に関する第一原理計算 GaNナノワイヤーの電子物性制御に関する第一原理計算 2003年秋季第64回応用物理学会学術講演会 2003年秋季第64回応用物理学会学術講演会 2003 Disclose to all
ゲルマン分子を含む化学反応系の反応過程に関する量子化学的研究 ゲルマン分子を含む化学反応系の反応過程に関する量子化学的研究 2003年秋季第64回応用物理学会学術講演会 2003年秋季第64回応用物理学会学術講演会 2003 Disclose to all
First-Principle Study on Reactions and Dynamical Electronic Characteristics of Electromigration on Aluminum Nanowires First-Principle Study on Reactions and Dynamical Electronic Characteristics of Electromigration on Aluminum Nanowires THERMEC 2003 THERMEC 2003 2003 Disclose to all
First-Principle Study on Structures and Electronic Properties of Aluminum Nanowire Wrapped in Carbon Nanotube First-Principle Study on Structures and Electronic Properties of Aluminum Nanowire Wrapped in Carbon Nanotube 1st International Conference on Polymer Batteries and Fuel Cells (PBFC-1) 1st International Conference on Polymer Batteries and Fuel Cells (PBFC-1) 2003 Poster presentation Disclose to all
First-Principle Study on the Structures and Electronic Properties of Gallium Nitride Nanowires First-Principle Study on the Structures and Electronic Properties of Gallium Nitride Nanowires 5th International Conference on Nitride Semiconductors (ICNS-5) 5th International Conference on Nitride Semiconductors (ICNS-5) 2003 Poster presentation Disclose to all
シリケート誘電体に関する領域密度汎関数理論の応用計算 シリケート誘電体に関する領域密度汎関数理論の応用計算 2003年春季第50回応用物理学関係連合講演会 2003年春季第50回応用物理学関係連合講演会 2003 Poster presentation Disclose to all
高スピン状態におけるアルカリ金属クラスター生成過程の量子エネルギー密度解析 高スピン状態におけるアルカリ金属クラスター生成過程の量子エネルギー密度解析 日本物理学会第58回年次大会 日本物理学会第58回年次大会 2003 Disclose to all
GaNナノワイヤーに関する領域密度汎関数理論の応用計算 GaNナノワイヤーに関する領域密度汎関数理論の応用計算 2003年春季第50回応用物理学関係連合講演会 2003年春季第50回応用物理学関係連合講演会 2003 Disclose to all
ベンゼン-1,4-ジチオール/ニッケル系電子材料接合界面の量子電磁相互作用 ベンゼン-1,4-ジチオール/ニッケル系電子材料接合界面の量子電磁相互作用 日本化学会第83春季年会 日本化学会第83春季年会 2003 Poster presentation Disclose to all
クラスターの結合生成における電子相互作用に関する領域密度汎関数理論の応用計算 クラスターの結合生成における電子相互作用に関する領域密度汎関数理論の応用計算 日本化学会第83春季年会 日本化学会第83春季年会 2003 Poster presentation Disclose to all
ポリスチレンモデルの光酸化分解反応過程に関する領域密度汎関数理論の応用計算 ポリスチレンモデルの光酸化分解反応過程に関する領域密度汎関数理論の応用計算 日本化学会第83春季年会 日本化学会第83春季年会 2003 Disclose to all
シリケート誘電体の構造および電子物性に関する第一原理計算 シリケート誘電体の構造および電子物性に関する第一原理計算 極薄シリコン酸化膜の形成・評価・信頼性 第8回研究会 極薄シリコン酸化膜の形成・評価・信頼性 第8回研究会 2003 Poster presentation Disclose to all
First-Principle Theoretical Study on the Electronic Properties of SiO2 Models with Hydrogenated Impurities and Charges First-Principle Theoretical Study on the Electronic Properties of SiO2 Models with Hydrogenated Impurities and Charges 4th International Symposium on the Control of Semiconductor Interfaces (ISCSI-4) 4th International Symposium on the Control of Semiconductor Interfaces (ISCSI-4) 2002 Disclose to all
Theoretical Study on the Initial Processes of Nitridation of Silicon Thin Film Theoretical Study on the Initial Processes of Nitridation of Silicon Thin Film 4th International Symposium on the Control of Semiconductor Interfaces (ISCSI-4) 4th International Symposium on the Control of Semiconductor Interfaces (ISCSI-4) 2002 Disclose to all
量子エネルギー密度の応用計算:高スピン状態におけるアルカリ金属原子クラスター生成過程の解析 量子エネルギー密度の応用計算:高スピン状態におけるアルカリ金属原子クラスター生成過程の解析 分子構造総合討論会(2002) 分子構造総合討論会(2002) 2002 Disclose to all
ナノ組織体の領域における量子電磁相互作用 ナノ組織体の領域における量子電磁相互作用 日本化学会第82秋季年会 日本化学会第82秋季年会 2002 Disclose to all
エレクトロマイグレーション現象における有効核電荷の第一原理計算 エレクトロマイグレーション現象における有効核電荷の第一原理計算 日本物理学会2002年秋季大会 日本物理学会2002年秋季大会 2002 Disclose to all
First-Principle Study on Structures and Electronic Properties of Aluminum Nanowires First-Principle Study on Structures and Electronic Properties of Aluminum Nanowires 6th World Congress of Theoretically Oriented Chemists (WATOC-6) 6th World Congress of Theoretically Oriented Chemists (WATOC-6) 2002 Disclose to all
Wave-Packet Dynamics and Quantum Energy Densities in the Quartet N2+ + O2 System Wave-Packet Dynamics and Quantum Energy Densities in the Quartet N2+ + O2 System 第6回日中理論化学シンポジウム 第6回日中理論化学シンポジウム 2002 Poster presentation Disclose to all
High-Spin Electronic Interaction of Small Lithium and Sodium Cluster Formation in the Excited States High-Spin Electronic Interaction of Small Lithium and Sodium Cluster Formation in the Excited States 第6回日中理論化学シンポジウム 第6回日中理論化学シンポジウム 2002 Poster presentation Disclose to all
N2+ + O2系の四重項状態反応過程に関する波束ダイナミクスと量子力学エネルギー密度 N2+ + O2系の四重項状態反応過程に関する波束ダイナミクスと量子力学エネルギー密度 2002年春季第49回応用物理学関係連合講演会 2002年春季第49回応用物理学関係連合講演会 2002 Poster presentation Disclose to all
励起状態リチウム・ナトリウムクラスターの結合生成における高スピン電子相互作用 励起状態リチウム・ナトリウムクラスターの結合生成における高スピン電子相互作用 2002年春季第49回応用物理学関係連合講演会 2002年春季第49回応用物理学関係連合講演会 2002 Poster presentation Disclose to all
エレクトロマイグレーションにおける電子の動的特性に対する第一原理解析 エレクトロマイグレーションにおける電子の動的特性に対する第一原理解析 2002年春季第49回応用物理学関係連合講演会 2002年春季第49回応用物理学関係連合講演会 2002 Poster presentation Disclose to all
III-V族窒化物半導体のMOVPE過程における寄生反応の制御 III-V族窒化物半導体のMOVPE過程における寄生反応の制御 2002年春季第49回応用物理学関係連合講演会 2002年春季第49回応用物理学関係連合講演会 2002 Disclose to all
Alナノワイヤーに関する領域密度汎関数理論の応用計算 Alナノワイヤーに関する領域密度汎関数理論の応用計算 2002年春季第49回応用物理学関係連合講演会 2002年春季第49回応用物理学関係連合講演会 2002 Disclose to all
外部電場存在下におけるSiO2薄膜材料の信頼性に関する第一原理計算と波束シミュレーション 外部電場存在下におけるSiO2薄膜材料の信頼性に関する第一原理計算と波束シミュレーション 極薄シリコン酸化膜の形成・評価・信頼性 第7回研究会 極薄シリコン酸化膜の形成・評価・信頼性 第7回研究会 2002 Poster presentation Disclose to all
外部電場存在下におけるZrO2およびHfO2結晶の誘電物性に関する第一原理計算 外部電場存在下におけるZrO2およびHfO2結晶の誘電物性に関する第一原理計算 極薄シリコン酸化膜の形成・評価・信頼性 第7回研究会 極薄シリコン酸化膜の形成・評価・信頼性 第7回研究会 2002 Poster presentation Disclose to all
First-Principle Theoretical Study on Reliability of SiO2 Thin Films under External Electric Field First-Principle Theoretical Study on Reliability of SiO2 Thin Films under External Electric Field International Workshop on Gate Insulator 2001 (IWGI2001) International Workshop on Gate Insulator 2001 (IWGI2001) 2001 Poster presentation Disclose to all
First-Principle Electronic Properties of ZrO2 and HfO2 Crystals under External Electric Field First-Principle Electronic Properties of ZrO2 and HfO2 Crystals under External Electric Field International Workshop on Gate Insulator 2001 (IWGI2001) International Workshop on Gate Insulator 2001 (IWGI2001) 2001 Poster presentation Disclose to all
III-V族窒化物結晶生長時の寄生反応における置換基効果と反応制御 III-V族窒化物結晶生長時の寄生反応における置換基効果と反応制御 分子構造総合討論会(2001) 分子構造総合討論会(2001) 2001 Poster presentation Disclose to all
トリクロロシランと吸着水分子との反応過程に関する領域密度汎関数理論の応用 トリクロロシランと吸着水分子との反応過程に関する領域密度汎関数理論の応用 2001年春季第48回応用物理学関係連合講演会 2001年春季第48回応用物理学関係連合講演会 2001 Disclose to all
Quantum Chemical Study of Ion-Molecule Reactions in N2+ + O2 System Quantum Chemical Study of Ion-Molecule Reactions in N2+ + O2 System 2000 International Chemical Congress of Pacific Basin Societies (PACIFICHEM 2000) 2000 International Chemical Congress of Pacific Basin Societies (PACIFICHEM 2000) 2000 Poster presentation Disclose to all
N2+ + O2系の電荷移動反応に関する領域密度汎関数理論の応用計算 N2+ + O2系の電荷移動反応に関する領域密度汎関数理論の応用計算 分子構造総合討論会(2000) 分子構造総合討論会(2000) 2000 Poster presentation Disclose to all
III-V族窒化物結晶生長時の寄生反応に関する領域密度汎関数理論の応用計算 III-V族窒化物結晶生長時の寄生反応に関する領域密度汎関数理論の応用計算 分子構造総合討論会(2000) 分子構造総合討論会(2000) 2000 Poster presentation Disclose to all
励起リチウム原子クラスターの結合生成に関する領域密度汎関数理論の応用計算 励起リチウム原子クラスターの結合生成に関する領域密度汎関数理論の応用計算 分子構造総合討論会(2000) 分子構造総合討論会(2000) 2000 Poster presentation Disclose to all
Regional Density Functional Theory for Parasitic Reaction in III-V Nitride Semiconductor Crystal Growth Regional Density Functional Theory for Parasitic Reaction in III-V Nitride Semiconductor Crystal Growth International Workshop on Nitride Semiconductors International Workshop on Nitride Semiconductors 2000 Poster presentation Disclose to all
TiN表面のフッ素エッチングに関する領域密度汎関数理論の応用計算 TiN表面のフッ素エッチングに関する領域密度汎関数理論の応用計算 2000年秋季第61回応用物理学会学術講演会 2000年秋季第61回応用物理学会学術講演会 2000 Poster presentation Disclose to all
水素終端シリコン表面の酸化過程に関する領域密度汎関数理論の応用計算 水素終端シリコン表面の酸化過程に関する領域密度汎関数理論の応用計算 2000年秋季第61回応用物理学会学術講演会 2000年秋季第61回応用物理学会学術講演会 2000 Disclose to all
GaN表面の結晶成長に関する領域密度汎関数理論の応用計算 GaN表面の結晶成長に関する領域密度汎関数理論の応用計算 2000年秋季第61回応用物理学会学術講演会 2000年秋季第61回応用物理学会学術講演会 2000 Disclose to all
Quantum Chemical Study of Parasitic Reaction in III-V Nitride Semiconductor Crystal Growth Quantum Chemical Study of Parasitic Reaction in III-V Nitride Semiconductor Crystal Growth 8th International Kyoto Conference on New Aspects of Organic Chemistry (IKCOC-8) 8th International Kyoto Conference on New Aspects of Organic Chemistry (IKCOC-8) 2000 Poster presentation Disclose to all
Regional Density Functional Theory for Crystal Growth in GaN Regional Density Functional Theory for Crystal Growth in GaN 10th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-X) 10th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-X) 2000 Disclose to all
イオン-原子系の領域分割に対する領域密度汎関数理論特性量の諸性質 イオン-原子系の領域分割に対する領域密度汎関数理論特性量の諸性質 第4回理論化学討論会 第4回理論化学討論会 2000 Disclose to all
TiN表面のフッ素エッチングに関する領域密度汎関数理論の応用計算 TiN表面のフッ素エッチングに関する領域密度汎関数理論の応用計算 第4回理論化学討論会 第4回理論化学討論会 2000 Poster presentation Disclose to all
GaN表面の結晶成長に関する領域密度汎関数理論の応用計算 GaN表面の結晶成長に関する領域密度汎関数理論の応用計算 第4回理論化学討論会 第4回理論化学討論会 2000 Poster presentation Disclose to all
III-V窒化物結晶生成時の寄生反応に関する領域密度汎関数理論の応用計算 III-V窒化物結晶生成時の寄生反応に関する領域密度汎関数理論の応用計算 第4回理論化学討論会 第4回理論化学討論会 2000 Poster presentation Disclose to all
アルコキシオレフィン錯体を用いた銅CVD反応に関する量子化学的研究 アルコキシオレフィン錯体を用いた銅CVD反応に関する量子化学的研究 1998年秋季第59回応用物理学会学術講演会 1998年秋季第59回応用物理学会学術講演会 1998 Disclose to all
アルキルアミドチタン-アンモニア系の窒化チタンCVD反応に関する量子化学的研究 アルキルアミドチタン-アンモニア系の窒化チタンCVD反応に関する量子化学的研究 1998年秋季第59回応用物理学会学術講演会 1998年秋季第59回応用物理学会学術講演会 1998 Disclose to all
複雑電子系の領域化学ポテンシャル非相等性原理 複雑電子系の領域化学ポテンシャル非相等性原理 分子構造総合討論会(1997) 分子構造総合討論会(1997) 1997 Poster presentation Disclose to all
領域密度汎関数理論の応用計算 領域密度汎関数理論の応用計算 1997計算化学・理論化学討論会 1997計算化学・理論化学討論会 1997 Poster presentation Disclose to all
イオン-原子系における分極および電子移動に関する相互作用混成分子軌道法の応用 イオン-原子系における分極および電子移動に関する相互作用混成分子軌道法の応用 日本化学会第72春季年会 日本化学会第72春季年会 1997 Poster presentation Disclose to all
領域化学ポテンシャル非相等性原理のイオン-原子系への応用 領域化学ポテンシャル非相等性原理のイオン-原子系への応用 分子構造総合討論会(1996) 分子構造総合討論会(1996) 1996 Poster presentation Disclose to all
アリルシランの [1,3] シグマトロピーに関する理論的研究 アリルシランの [1,3] シグマトロピーに関する理論的研究 日本化学会第70春季年会 日本化学会第70春季年会 1996 Poster presentation Disclose to all
フェニルジシランの分子内転移反応に関する理論的研究 フェニルジシランの分子内転移反応に関する理論的研究 日本化学会第70春季年会 日本化学会第70春季年会 1996 Poster presentation Disclose to all
ジシラシクロブテンの電子環状反応とニッケル錯体形成に及ぼす電子相関の効果 ジシラシクロブテンの電子環状反応とニッケル錯体形成に及ぼす電子相関の効果 分子構造総合討論会(1995) 分子構造総合討論会(1995) 1995 Poster presentation Disclose to all
アニオン重合開始反応の領域密度汎関数理論 アニオン重合開始反応の領域密度汎関数理論 日本化学会第68秋季年会 日本化学会第68秋季年会 1994 Disclose to all
Ti+-イソブチレン系気相カチオン重合反応に関する量子化学計算 Ti+-イソブチレン系気相カチオン重合反応に関する量子化学計算 分子構造総合討論会(1994) 分子構造総合討論会(1994) 1994 Poster presentation Disclose to all
First-Principles Simulation on Piezoresistivity of Macro/Nanoscale Silicon Materials First-Principles Simulation on Piezoresistivity of Macro/Nanoscale Silicon Materials 2010 International Chemical Congress of Pacific Basin Society (PACIFICHEM2010) 2010 International Chemical Congress of Pacific Basin Society (PACIFICHEM2010) 2010 Poster presentation Disclose to all
First-Principles Simulation on Piezoresistivity in Alpha and Beta Silicon Carbide Nanosheets First-Principles Simulation on Piezoresistivity in Alpha and Beta Silicon Carbide Nanosheets 23rd International Microprocesses and Nanotechnology Conference (MNC2010) 23rd International Microprocesses and Nanotechnology Conference (MNC2010) 2010 Poster presentation Disclose to all
Analysis on Piezoresistive Property of Silicon Carbide on the Basis of Forst-Principles Calculation Analysis on Piezoresistive Property of Silicon Carbide on the Basis of Forst-Principles Calculation 2010 Poster presentation Disclose to all
Evaluation of Piezoresistance Coefficients of Silicon Nanosheets on the Basis of First-Principles Band Structures Evaluation of Piezoresistance Coefficients of Silicon Nanosheets on the Basis of First-Principles Band Structures 23rd IEEE International Conference on Micro Electro Mechanical Systems (MEMS2010) 23rd IEEE International Conference on Micro Electro Mechanical Systems (MEMS2010) 2010 Poster presentation Disclose to all
First-Principles Simulation on Thickness Dependence of Piezoresistance Effect in Silicon Nanosheets First-Principles Simulation on Thickness Dependence of Piezoresistance Effect in Silicon Nanosheets 22nd International Microprocesses and Nanotechnology Conference (MNC2009) 22nd International Microprocesses and Nanotechnology Conference (MNC2009) 2009 Disclose to all
Characterization of the Piezoresistive Effect and Temperature Coefficient of Resistance in Single Crystalline Silicon Nanowires Characterization of the Piezoresistive Effect and Temperature Coefficient of Resistance in Single Crystalline Silicon Nanowires 2009 International Symposium on Micro-NanoMechatronics and Human Science (MHS2009) 2009 International Symposium on Micro-NanoMechatronics and Human Science (MHS2009) 2009 Disclose to all
Piezoresistive Effect in Silicon Nanowires - A Comprehensive Analysis Based on First-Principles Calculations Piezoresistive Effect in Silicon Nanowires - A Comprehensive Analysis Based on First-Principles Calculations 2009 International Symposium on Micro-NanoMechatronics and Human Science (MHS2009) 2009 International Symposium on Micro-NanoMechatronics and Human Science (MHS2009) 2009 Poster presentation Disclose to all
Dimensional Reduction Effect on Electronic States and Piezoresistivity in Nanoscale Silicon Materials Dimensional Reduction Effect on Electronic States and Piezoresistivity in Nanoscale Silicon Materials Joint Symposium on Micro/Nano Science and Technology Joint Symposium on Micro/Nano Science and Technology 2009 Disclose to all
Electronic States and Piezoresistivity in Silicon Nanosheets Electronic States and Piezoresistivity in Silicon Nanosheets 2009 Poster presentation Disclose to all
First-Principles Simulation on Piezoresistive Properties in Low-Dimensional Silicon Materials First-Principles Simulation on Piezoresistive Properties in Low-Dimensional Silicon Materials 2008 International Symposium on Micro/Nano Systems Technology (ISMST2008) 2008 International Symposium on Micro/Nano Systems Technology (ISMST2008) 2008 Disclose to all
First-Principles Simulation on Orientation Dependence of Piezoresistance Properties in Silicon Nanowires First-Principles Simulation on Orientation Dependence of Piezoresistance Properties in Silicon Nanowires 21st International Microprocesses and Nanotechnology Conference (MNC2008) 21st International Microprocesses and Nanotechnology Conference (MNC2008) 2008 Poster presentation Disclose to all
Evaluation of Low-dimensional Band Structure in Silicon Nanowires for Ultra Small Piezoresistive Sensors by First-Principle Calculation Evaluation of Low-dimensional Band Structure in Silicon Nanowires for Ultra Small Piezoresistive Sensors by First-Principle Calculation 2008 MRS Spring Meeting 2008 MRS Spring Meeting 2008 Poster presentation Disclose to all
First-Principles Study on Piezoresistance Effect in Silicon Nanowires First-Principles Study on Piezoresistance Effect in Silicon Nanowires 20th International Microprocesses and Nanotechnology Conference (MNC2007) 20th International Microprocesses and Nanotechnology Conference (MNC2007) 2007 Poster presentation Disclose to all
First-Principle Study on Nitridation of Silicon Dioxide and Electronic Properties of Silicon Oxynitride Thin Film First-Principle Study on Nitridation of Silicon Dioxide and Electronic Properties of Silicon Oxynitride Thin Film 2004 International Workshop on Dielectric Thin Film for Future ULSI Devices (IWDTF-04) 2004 International Workshop on Dielectric Thin Film for Future ULSI Devices (IWDTF-04) 2004 Poster presentation Disclose to all
First-Principle Study on Electronic Properties of Gallium Nitride and Aluminum Nitride Nanowire First-Principle Study on Electronic Properties of Gallium Nitride and Aluminum Nitride Nanowire 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004) 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004) 2004 Poster presentation Disclose to all
Quantum Chemical Study on Substituent Effect of Gas-Phase Reactions in III-V Nitride Semiconductor Crystal Growth Quantum Chemical Study on Substituent Effect of Gas-Phase Reactions in III-V Nitride Semiconductor Crystal Growth 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004) 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004) 2004 Poster presentation Disclose to all
First-Principle Study on Reactions and Dynamical Electronic Characteristics of Electromigration on Aluminum Nanowires First-Principle Study on Reactions and Dynamical Electronic Characteristics of Electromigration on Aluminum Nanowires THERMEC 2003 THERMEC 2003 2003 Disclose to all
First-Principle Study on Structures and Electronic Properties of Aluminum Nanowire Wrapped in Carbon Nanotube First-Principle Study on Structures and Electronic Properties of Aluminum Nanowire Wrapped in Carbon Nanotube 1st International Conference on Polymer Batteries and Fuel Cells (PBFC-1) 1st International Conference on Polymer Batteries and Fuel Cells (PBFC-1) 2003 Poster presentation Disclose to all
First-Principle Study on the Structures and Electronic Properties of Gallium Nitride Nanowires First-Principle Study on the Structures and Electronic Properties of Gallium Nitride Nanowires 5th International Conference on Nitride Semiconductors (ICNS-5) 5th International Conference on Nitride Semiconductors (ICNS-5) 2003 Poster presentation Disclose to all
First-Principle Theoretical Study on the Electronic Properties of SiO2 Models with Hydrogenated Impurities and Charges First-Principle Theoretical Study on the Electronic Properties of SiO2 Models with Hydrogenated Impurities and Charges 4th International Symposium on the Control of Semiconductor Interfaces (ISCSI-4) 4th International Symposium on the Control of Semiconductor Interfaces (ISCSI-4) 2002 Disclose to all
Theoretical Study on the Initial Processes of Nitridation of Silicon Thin Film Theoretical Study on the Initial Processes of Nitridation of Silicon Thin Film 4th International Symposium on the Control of Semiconductor Interfaces (ISCSI-4) 4th International Symposium on the Control of Semiconductor Interfaces (ISCSI-4) 2002 Disclose to all
First-Principle Study on Structures and Electronic Properties of Aluminum Nanowires First-Principle Study on Structures and Electronic Properties of Aluminum Nanowires 6th World Congress of Theoretically Oriented Chemists (WATOC-6) 6th World Congress of Theoretically Oriented Chemists (WATOC-6) 2002 Disclose to all
Wave-Packet Dynamics and Quantum Energy Densities in the Quartet N2+ + O2 System Wave-Packet Dynamics and Quantum Energy Densities in the Quartet N2+ + O2 System 2002 Poster presentation Disclose to all
High-Spin Electronic Interaction of Small Lithium and Sodium Cluster Formation in the Excited States High-Spin Electronic Interaction of Small Lithium and Sodium Cluster Formation in the Excited States 2002 Poster presentation Disclose to all
First-Principle Theoretical Study on Reliability of SiO2 Thin Films under External Electric Field First-Principle Theoretical Study on Reliability of SiO2 Thin Films under External Electric Field International Workshop on Gate Insulator 2001 (IWGI2001) International Workshop on Gate Insulator 2001 (IWGI2001) 2001 Poster presentation Disclose to all
First-Principle Electronic Properties of ZrO2 and HfO2 Crystals under External Electric Field First-Principle Electronic Properties of ZrO2 and HfO2 Crystals under External Electric Field International Workshop on Gate Insulator 2001 (IWGI2001) International Workshop on Gate Insulator 2001 (IWGI2001) 2001 Poster presentation Disclose to all
Quantum Chemical Study of Ion-Molecule Reactions in N2+ + O2 System Quantum Chemical Study of Ion-Molecule Reactions in N2+ + O2 System 2000 International Chemical Congress of Pacific Basin Societies (PACIFICHEM 2000) 2000 International Chemical Congress of Pacific Basin Societies (PACIFICHEM 2000) 2000 Poster presentation Disclose to all
Regional Density Functional Theory for Parasitic Reaction in III-V Nitride Semiconductor Crystal Growth Regional Density Functional Theory for Parasitic Reaction in III-V Nitride Semiconductor Crystal Growth International Workshop on Nitride Semiconductors International Workshop on Nitride Semiconductors 2000 Poster presentation Disclose to all
Quantum Chemical Study of Parasitic Reaction in III-V Nitride Semiconductor Crystal Growth Quantum Chemical Study of Parasitic Reaction in III-V Nitride Semiconductor Crystal Growth 8th International Kyoto Conference on New Aspects of Organic Chemistry (IKCOC-8) 8th International Kyoto Conference on New Aspects of Organic Chemistry (IKCOC-8) 2000 Poster presentation Disclose to all
Regional Density Functional Theory for Crystal Growth in GaN Regional Density Functional Theory for Crystal Growth in GaN 10th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-X) 10th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-X) 2000 Disclose to all

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Title language:
Books etc
Author Author(Japanese) Author(English) Title Title(Japanese) Title(English) Publisher Publisher(Japanese) Publisher(English) Publication date Language Type Disclose
Paola Prete (ed.) Paola Prete (ed.) Paola Prete (ed.) Nanowires (Chapter 15) " Nanowires (Chapter 15) " Nanowires (Chapter 15) " InTech InTech InTech 2010/02 English Disclose to all
日本表面科学会編 日本表面科学会編 新訂版 表面科学の基礎と応用(第2編 第3章 第5節(分子軌道法)担当) 新訂版 表面科学の基礎と応用(第2編 第3章 第5節(分子軌道法)担当) エヌ・ティー・エス エヌ・ティー・エス 2004/06 Japanese Disclose to all
Title language:
External funds, competitive funds and Grants-in-Aid for Scientific Research(kaken)
Type Position Title(Japanese) Title(English) Period
基盤研究(C) Representative 第一原理電子状態計算に基づく熱電特性評価シミュレーションの創出と新規材料の探査 (平成26年度分) 2014/04/01-2015/03/31
若手研究(B) Representative 第一原理電子状態理論による次世代ゲート絶縁膜材料設計および物性予測 2004/04/01-2006/03/31
基盤研究(C) Assignment 異種材料コンタクト界面の電子状態に関する理論的研究 2000/04/01-2002/03/31
基盤研究(C) Representative 第一原理電子状態計算に基づく熱電特性評価シミュレーションの創出と新規材料の探査 (平成27年度分) 2015/04/01-2016/03/31
基盤研究(C) Representative 第一原理電子状態計算に基づく熱電特性評価シミュレーションの創出と新規材料の探査 (平成28年度分) 2016/04/01-2017/03/31
Non-external, competitive funds or grants other than grants-in-aid for Scientific research (kaken)
System Main person Title(Japanese) Title(English) Period
二国間交流事業 共同研究 田畑修 第一原理電子状態計算によるナノ材料のひずみ抵抗効果の予測とナノセンサへの応用 2012/04/01-2014/03/31